CN201523335U - Silicon controlled voltage limiting conversion device for converting alternating current into direct current - Google Patents
Silicon controlled voltage limiting conversion device for converting alternating current into direct current Download PDFInfo
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- CN201523335U CN201523335U CN2009203038630U CN200920303863U CN201523335U CN 201523335 U CN201523335 U CN 201523335U CN 2009203038630 U CN2009203038630 U CN 2009203038630U CN 200920303863 U CN200920303863 U CN 200920303863U CN 201523335 U CN201523335 U CN 201523335U
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Abstract
The utility model relates to a silicon controlled voltage limiting conversion device for converting alternating current into direct current, which aims to resolve problems that output voltage of alternating current generator is overhigh in change range and brings difficulty to treatment of a follow-up direct current voltage stabilized power source. The silicon controlled voltage limiting conversion device can limit rectifying output direct current voltage into a certain range, thereby bringing convenience for follow-up treatment of the direct current voltage stabilized power source. The silicon controlled voltage limiting conversion device consists of a field effect tube (Q), a diode (D), a resistor (R), a voltage stabilized tube (W) and a silicon controlled thyristor (T). The silicon controlled voltage limiting conversion device can be applied to equipment which is high in rotation speed change during working, causes overlarge change range of the alternating current output voltage and brings difficulty to treatment of direct current voltage stabilized power sources, such as wind driven generators and the like.
Description
Technical field
The utility model relates to a kind of device that is used for the exchange conversion direct current, particularly a kind of controllable silicon pressure limiting converting means.
Background technology
A certain class alternating current generator, during its work, rotation speed change is very big, causes the ac output voltage changes in amplitude very big, as some wind-force and alternator for vehicle etc.Most of circuit will be converted into galvanic current to alternating current and could use.The alternator output voltage changes in amplitude is excessive, handles to D.C. regulated power supply and brings difficulty.Its rectification output of common bridge diode rectification circuit commonly used becomes with input ac voltage, can not satisfy the demand.Need a kind ofly can limit within the specific limits rectification circuit to output dc voltage for this reason, be convenient to the D.C. regulated power supply subsequent treatment.
Summary of the invention
The purpose of this utility model is: excessive in order to improve the alternator output voltage changes in amplitude that background technology mentions, bring difficult problem for the processing of follow-up D.C. regulated power supply, the utility model provides a kind of controllable silicon pressure limiting converting means that is used for the exchange conversion direct current.Can limit output dc voltage within the specific limits, be convenient to the D.C. regulated power supply subsequent treatment.
The technical solution of the utility model is:
This is used for the controllable silicon pressure limiting converting means of exchange conversion direct current, by a field benefit pipe Q, diode D, resistance R, voltage-stabiliser tube W and controllable silicon T constitute, the circuit connecting relation that they constitute is: controllable silicon T anode connects a wherein utmost point of input AC or an end and the field effect transistor Q drain electrode of pulsating direct current and resistance R, controllable silicon T gate pole connects diode D negative electrode, controllable silicon T negative electrode connects the output direct current, field effect transistor Q source electrode connects diode D anode, field effect transistor Q grid connects the voltage-stabiliser tube W negative electrode and the resistance R other end, and voltage-stabiliser tube W anode connects with reference to ground.
The controllable silicon T here can be unidirectional, also can be two-way, if bidirectional triode thyristor, the corresponding one-way SCR anode of the 2nd main end, the corresponding one-way SCR negative electrode of the 1st main end, noun controllable silicon and thyristor are equivalent in meaning in the utility model;
Field effect transistor Q also can substitute with triode or IGBT, in this case, and the corresponding base stage of grid, the corresponding collector electrode that drains, the corresponding emitter of source electrode;
Controllable silicon negative electrode anode in the foregoing circuit is exchanged, and all diodes and voltage-stabiliser tube negative electrode anode are exchanged, and field effect transistor N raceway groove and P raceway groove exchange, and triode NPN type and positive-negative-positive exchange, and then constitute the reverse version of this converting means output voltage.
This is used for the controllable silicon pressure limiting converting means of exchange conversion direct current, and controllable silicon can adopt bidirectional triode thyristor, and experiment shows
, adopt bidirectional triode thyristor pressure limiting better effects if.Many resistance R 1, R2 and voltage-stabiliser tube W1 in the controllable silicon trigger control circuit.Triggering has slight improvement effect to controllable silicon to add resistance R2, and resistance R 1 and voltage-stabiliser tube W1 shield to field effect transistor Q.
A top scheme positive period or negative cycle work in order to improve rectification efficiency, can be adopted a kind of bridge type semi-control controllable silicon pressure limiting rectifying device in the practicality, it comprises rectifier diode Z, foregoing controllable silicon pressure limiting converting means, output filter capacitor C constitutes halbgesteuerte Gleichrichterbrueckenschaltung; According to input AC is three-phase or single-phase, and the rectification channel unit of 1 rectifier diode Z and 1 connected controllable silicon pressure limiting converting means formation is respectively 3 and 2 in this halbgesteuerte Gleichrichterbrueckenschaltung, and output meets total filtering capacitor C;
Wherein the annexation of 1 rectification channel unit is: controllable silicon T anode connects a wherein utmost point and the negative electrode of rectifier diode Z and an end and the field effect transistor Q drain electrode of resistance R that exchanges input, controllable silicon T gate pole connects diode D negative electrode, controllable silicon T negative electrode connects output filter capacitor C positive pole, field effect transistor Q source electrode connects diode D anode, field effect transistor Q grid connects the voltage-stabiliser tube W negative electrode and the resistance R other end, and output filter capacitor C negative pole and voltage-stabiliser tube W anode and rectifying tube Z anode connect with reference to ground;
If output connects storage battery, output filter capacitor C can be with also can;
Controllable silicon negative electrode anode in the foregoing circuit is exchanged, all diodes and voltage-stabiliser tube negative electrode anode are exchanged, and field effect transistor N raceway groove and P raceway groove exchange, and triode NPN type and positive-negative-positive exchange, the capacitor anode negative pole is exchanged, and then constitutes the reverse version of this rectifying device output voltage.
In order to reduce cost, take into account rectification efficiency, can also adopt another kind of diode bridge rectification serial connection controllable silicon pressure limiting converting means in the practicality.It has above-mentioned controllable silicon pressure limiting converting means and the rectifier bridge that is made of rectifier diode Z, the above-mentioned controllable silicon pressure limiting converting means of this rectifier bridge direct current output serial connection, its conversion output meets output filter capacitor C, according to input AC is three-phase or single-phase, and the rectifier bridge that corresponding rectifier diode Z constitutes is respectively three-phase or two-phase;
Each exchanges input one end and connects each end of rectifier bridge interchange input respectively, controllable silicon T anode connects an end and the field effect transistor Q drain electrode of rectifier bridge rectification positive output end and resistance R, controllable silicon T gate pole connects diode D negative electrode, controllable silicon T negative electrode connects output filter capacitor C positive pole, field effect transistor Q source electrode connects diode D anode, field effect transistor Q grid connects the voltage-stabiliser tube W negative electrode and the resistance R other end, and capacitor C negative pole and voltage-stabiliser tube W anode and rectifier bridge rectification negative output termination are with reference to ground;
If output connects storage battery, output filter capacitor C can be with also can;
Controllable silicon negative electrode anode in the foregoing circuit is exchanged, all diodes and voltage-stabiliser tube negative electrode anode are exchanged, and field effect transistor N raceway groove and P raceway groove exchange, and triode NPN type and positive-negative-positive exchange, the capacitor anode negative pole is exchanged, and then constitutes the reverse version of this rectifying device output voltage.
The beneficial effects of the utility model are:
Rectification circuit described in the utility model, when the rectification output dc voltage is higher than voltage-stabiliser tube W stop voltage, not conducting of field effect transistor Q, controllable silicon T just can not be triggered conducting again, so just cut off the alternating current input, the output dc voltage peak has been limited near the voltage-stabiliser tube W stop voltage.Handling for follow-up stabilized voltage power supply brings convenience.The design people uses this device in the power sources of motor vehicle system, the bridge type semi-control silicon controlled rectifier that adopts back embodiment to mention.Under 32 volts to 300 volts situations about changing of automotive alternator peak values of ac, commutated direct current output is no more than 80 volts.
Description of drawings
Fig. 1 is the utility model basic circuit structure schematic diagram.
Fig. 2 is that the utility model improves electrical block diagram.
Fig. 3 is an embodiment bridge type semi-control of a utility model circuit general structure schematic diagram.
Fig. 4 is that embodiment of the utility model is used for three-phase input circuit structural representation.
Fig. 5 is that embodiment of the utility model is used for single-phase input circuit structural representation.
Fig. 6 is that another embodiment of the utility model is used for three-phase input circuit structural representation.
Fig. 7 is that another embodiment of the utility model is used for single-phase input circuit structural representation.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described in further detail:
As illustrated in fig. 1 and 2, the controllable silicon T anode in the controllable silicon pressure limiting converting means connects a wherein utmost point of input AC or an end of pulsating direct current and resistance R is not direct continuous show effect pipe Q drain electrode, but by a resistance R 1.
In addition, between controllable silicon T gate pole and the controllable silicon T negative electrode, increase resistance R 2 of connection.
And, between field effect transistor Q grid and the field effect transistor Q source electrode, increasing voltage-stabiliser tube W1 of connection, voltage-stabiliser tube W1 negative electrode connects field effect transistor Q grid, and voltage-stabiliser tube W1 anode connects field effect transistor Q source electrode.
Fig. 3, what Fig. 4 and Fig. 5 showed is execution mode of the utility model.Compared with Fig. 1, the basic scheme that Fig. 2 represents has the high advantage of rectification efficiency.Being a kind of bridge type semi-control controllable silicon pressure limiting rectifying device of exchange conversion direct current, is a specific embodiment that is applied to the power sources of motor vehicle system.
What Fig. 6 and Fig. 7 showed is another execution mode of the utility model.It is the pressure limiting of a kind of diode bridge rectification serial connection controllable silicon
Converting means.This execution mode and previous execution mode with a controllable silicon passage, have the low advantage of cost owing to only by comparison; But since many through the one-level processing, the loss of many one-levels, and energy consumption efficiency reduces.It is the low-cost performance degradation scheme of a kind of realization said function.
Claims (6)
1. controllable silicon pressure limiting converting means that is used for the exchange conversion direct current, it is characterized in that: this device is by a field benefit pipe Q, diode D, resistance R, voltage-stabiliser tube W and controllable silicon T constitute, the circuit connecting relation that they constitute is: controllable silicon T anode connects a wherein utmost point of input AC or an end and the field effect transistor Q drain electrode of pulsating direct current and resistance R, controllable silicon T gate pole connects diode D negative electrode, controllable silicon T negative electrode connects the output direct current, field effect transistor Q source electrode connects diode D anode, field effect transistor Q grid connects the voltage-stabiliser tube W negative electrode and the resistance R other end, and voltage-stabiliser tube W anode connects with reference to ground;
The controllable silicon T here can be unidirectional, also can be two-way, if bidirectional triode thyristor, the corresponding one-way SCR anode of the 2nd main end, the corresponding one-way SCR negative electrode of the 1st main end;
Field effect transistor Q also can substitute with triode or IGBT, in this case, and the corresponding base stage of grid, the corresponding collector electrode that drains, the corresponding emitter of source electrode;
Controllable silicon negative electrode anode in the foregoing circuit is exchanged, and all diodes and voltage-stabiliser tube negative electrode anode are exchanged, and field effect transistor N raceway groove and P raceway groove exchange, and triode NPN type and positive-negative-positive exchange, and then constitute the reverse version of this converting means output voltage.
2. rectifying device, it is characterized in that: have the described controllable silicon pressure limiting of claim 1 converting means, rectifier diode Z and output filter capacitor C, be combined into halbgesteuerte Gleichrichterbrueckenschaltung, according to input AC is three-phase or single-phase, the rectification channel unit of 1 rectifier diode Z and 1 connected controllable silicon pressure limiting converting means formation is respectively 3 and 2 in this halbgesteuerte Gleichrichterbrueckenschaltung, meets total output filter capacitor C behind the rectification channel unit;
Wherein the annexation of 1 rectification channel unit is: controllable silicon T anode connects a wherein utmost point and the negative electrode of rectifier diode Z and an end and the field effect transistor Q drain electrode of resistance R that exchanges input, controllable silicon T gate pole connects diode D negative electrode, controllable silicon T negative electrode connects output filter capacitor C positive pole, field effect transistor Q source electrode connects diode D anode, field effect transistor Q grid connects the voltage-stabiliser tube W negative electrode and the resistance R other end, and output filter capacitor C negative pole and voltage-stabiliser tube W anode and rectifying tube Z anode connect with reference to ground;
If output connects storage battery, output filter capacitor C can be with also can;
Controllable silicon negative electrode anode in the foregoing circuit is exchanged, and all diodes and voltage-stabiliser tube negative electrode anode are exchanged field effect transistor N raceway groove
Exchange with the P raceway groove, triode NPN type and positive-negative-positive exchange, and the capacitor anode negative pole is exchanged, and then constitute the reverse version of this rectifying device output voltage.
3. diode bridge rectification serial connection controllable silicon pressure limiting converting means, it is characterized in that: the rectifier bridge that has claim 1 described controllable silicon pressure limiting converting means and constitute by rectifier diode Z, the described controllable silicon pressure limiting of this rectifier bridge direct current output serial connection claim 1 converting means, its conversion output meets output filter capacitor C, according to input AC is three-phase or single-phase, and the rectifier bridge that corresponding rectifier diode Z constitutes is respectively three-phase or two-phase;
Each exchanges input one end and connects each end of rectifier bridge interchange input respectively, controllable silicon T anode connects an end and the field effect transistor Q drain electrode of rectifier bridge rectification positive output end and resistance R, controllable silicon T gate pole connects diode D negative electrode, controllable silicon T negative electrode connects output filter capacitor C positive pole, field effect transistor Q source electrode connects diode D anode, field effect transistor Q grid connects the voltage-stabiliser tube W negative electrode and the resistance R other end, and capacitor C negative pole and voltage-stabiliser tube W anode and rectifier bridge rectification negative output termination are with reference to ground;
If output connects storage battery, output filter capacitor C can be with also can;
Controllable silicon negative electrode anode in the foregoing circuit is exchanged, all diodes and voltage-stabiliser tube negative electrode anode are exchanged, and field effect transistor N raceway groove and P raceway groove exchange, and triode NPN type and positive-negative-positive exchange, the capacitor anode negative pole is exchanged, and then constitutes the reverse version of this rectifying device output voltage.
4. controllable silicon pressure limiting converting means according to claim 1 is characterized in that: controllable silicon T anode connects a wherein utmost point of input AC or an end of pulsating direct current and resistance R is not direct continuous show effect pipe Q drain electrode, but by a resistance R 1.
5. controllable silicon pressure limiting converting means according to claim 1 is characterized in that: between controllable silicon T gate pole and the controllable silicon T negative electrode, increase resistance R 2 of connection.
6. controllable silicon pressure limiting converting means according to claim 1, it is characterized in that: between field effect transistor Q grid and the field effect transistor Q source electrode, increase voltage-stabiliser tube W1 of connection, voltage-stabiliser tube W1 negative electrode connects field effect transistor Q grid, and voltage-stabiliser tube W1 anode connects field effect transistor Q source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009203038630U CN201523335U (en) | 2009-05-31 | 2009-05-31 | Silicon controlled voltage limiting conversion device for converting alternating current into direct current |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009203038630U CN201523335U (en) | 2009-05-31 | 2009-05-31 | Silicon controlled voltage limiting conversion device for converting alternating current into direct current |
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| CN201523335U true CN201523335U (en) | 2010-07-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107196502A (en) * | 2017-07-25 | 2017-09-22 | 西安电子科技大学 | High voltage output level integrated circuit |
| CN108306257A (en) * | 2018-04-07 | 2018-07-20 | 佛山市顺德区信辉达电子有限公司 | Three pole break-make leakage protecting plug of intelligent control type |
-
2009
- 2009-05-31 CN CN2009203038630U patent/CN201523335U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107196502A (en) * | 2017-07-25 | 2017-09-22 | 西安电子科技大学 | High voltage output level integrated circuit |
| CN108306257A (en) * | 2018-04-07 | 2018-07-20 | 佛山市顺德区信辉达电子有限公司 | Three pole break-make leakage protecting plug of intelligent control type |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100707 Termination date: 20130531 |