CN201490230U - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN201490230U CN201490230U CN2009201678401U CN200920167840U CN201490230U CN 201490230 U CN201490230 U CN 201490230U CN 2009201678401 U CN2009201678401 U CN 2009201678401U CN 200920167840 U CN200920167840 U CN 200920167840U CN 201490230 U CN201490230 U CN 201490230U
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Abstract
The utility model provides a light emitting diode which has a concrete structure that an N+GaAs substrate, an N-GaAs buffer layer, an N-AlGaAs/GaAs Bragg reflecting layer, an AlGaAs/InGaAs quantum well active layer and a P+GaAs cap layer are formed from bottom to top on the upper surface of a substrate layer; a P-AlGaAs/GaAs Bragg reflecting layer is further formed between the AlGaAs/InGaAs quantum well active layer and the P+GaAs cap layer. The light emitting diode prevents a majority of light from scattering out from the substrate part by using the reflection effect of the Bragg reflecting layer. Simultaneously, two Bragg reflecting layers constitute a Fabry-Perot resonant cavity to modulate the light emitted from the active layer and also focus and amplify more light, thereby improving the light emitting efficiency.
Description
Technical field
The utility model relates to a kind of light-emitting diode, particularly relates to a kind of structure of infrarede emitting diode.
Background technology
Compare with conventional light source, light-emitting diode possesses numerous advantages, and is low as operating voltage, the efficiency height, and volume is little, can also produce adjustable directional light.These advantages make light-emitting diode application more and more widely, especially powerful infrarede emitting diode, grow, be easy to diffraction because of its luminous power height, wavelength especially, penetrate the strong characteristics of ability of cloud and mist, be widely used in fields such as range finding, orientation, night vision, space communication, obtained increasing development.
The core of light-emitting diode is its epitaxial structure, the substrate that certain material is made is placed in the epitaxial furnace, feed certain gaseous compound, at high temperature, pyrolytic reaction takes place, generating III-V or II-VI compounds of group and be deposited on the substrate, grow only several microns compound semiconductor epitaxial layer of thickness, promptly is our said epitaxial structure.
For example, Fig. 1 illustrates the epitaxial structure of the infrared large-power light-emitting diodes of existing 940nmGaAs.In detail, on liner layer 101, be formed with N+GaAs substrate 102, N-GaAs resilient coating 103, N-AlGaAs/GaAs Bragg reflection (DBR, i.e. Distributed BraggReflector) layer 104, AlGaAs/InGaAs mqw active layer 105 and P+GaAs cap layer 106 from bottom to up successively.
For such epitaxial structure, while actually employed, low (refractive index of GaAs is about 3.5 because with the high index of refraction of semi-conducting material in the interface of air contact and air, air is 1), cause the angle of emergence of light-emitting diode less, the light major part does not all scatter out, and causes light extraction efficiency lower, therefore luminous efficiency is very low, and the efficient under air interface approximately has only 2%.
In addition, patent documentation 1 discloses a kind of epitaxial structure of light-emitting diode, have at least two cover distributed bragg reflectors in this epitaxial structure, wherein a cover distributed bragg reflector is used for reflectance spectrum covering led radiation light, and another set of distributed bragg reflector is covering led radiation light through peroxidating back reflection spectrum.Because the distributed bragg reflector after the oxidation has very high reflectivity and reflectance spectrum width, the luminous efficiency of this epitaxial structure is increased.But, also there are the following problems for this epitaxial structure, promptly, because each cover distributed bragg reflector is close to, this two covers distributed bragg reflector is actually one deck, the light extraction efficiency of its light-emitting diode has only improved 1.1～1.2 times than the distributed bragg reflector of individual layer, and only the visible light of 400～700nm is had effect.Therefore, the epitaxial structure of light-emitting diode of this structure is because Infrared High-Power light-emitting diode requirement of actual application, need improve the phototransformation rate as much as possible, therefore, need a kind of new light emitting diode epitaxial structure not solve the low problem of luminous efficiency well.
Patent documentation 1: Chinese patent discloses CN1567603 number
The utility model content
The utility model is proposition in order to solve the problems referred to above point of existing in the existing light-emitting diode, and the light-emitting diode that provides a kind of luminous efficiency high is provided its purpose.
To achieve these goals, a kind of light-emitting diode that the utility model relates to, it is characterized in that, on the liner layer, be formed with N+GaAs substrate, N-GaAs resilient coating, N-AlGaAs/GaAs Bragg reflecting layer, AlGaAs/InGaAs mqw active layer, P-AlGaAs/GaAs Bragg reflecting layer and P+GaAs cap layer from bottom to up.
In addition, preferred construction is that the thickness of described AlGaAs/InGaAs mqw active layer is 940～960nm.
In addition, preferred construction is that the thickness of described P-AlGaAs/GaAs Bragg reflecting layer is 2 μ m～3 μ m.
In addition, preferred construction is that the thickness of described P+GaAs cap layer is 0.5～1.5 μ m.
According to aforesaid utility model, in the both sides of AlGaAs/InGaAs mqw active layer one deck Bragg reflecting layer is set respectively, reflection has strengthened reflection efficiency from the light that active layer sends; Simultaneously, this N-AlGaAs/GaAs Bragg reflecting layer and P-AlGaAs/GaAs Bragg reflecting layer have constituted the Fabry Perot resonator of standard, this resonant cavity can be modulated the light that sends from active layer, make more light energy reach the angle of departure that can emit, resonant cavity selects frequency light certain, that direction is consistent to make prepreerence amplification object, and the light of other frequencies and direction is suppressed, finally improved light extraction efficiency.
Description of drawings
Fig. 1 is the schematic diagram of the concrete structure of the existing light-emitting diode of expression.
Fig. 2 is the schematic diagram of the concrete structure of the light-emitting diode that relates to of expression the utility model.
Embodiment
Below, be described with reference to the accompanying drawings the embodiment that the utility model relates to.
Because light-emitting diode belongs to light emitting device, the key that therefore improves the conversion efficiency of light-emitting diode is to improve light extraction efficiency to greatest extent.But, in epitaxial structure and interface that air contacts because semi-conducting material is low with the high index of refraction of air, so light light-emitting diode is inner can the generation total reflection, the very major part of light is left on light-emitting diode inside, so the light exitance is very low.
Fig. 2 is the schematic diagram of the epitaxial structure of light-emitting diode that relates to of expression the utility model.As shown in the drawing, the concrete structure of epitaxial structure of light-emitting diode is to be formed with N+GaAs substrate layer 202, N-GaAs resilient coating 203, N-AlGaAs/GaAs Bragg reflecting layer 204, AlGaAs/InGaAs mqw active layer 205, P-AlGaAs/GaAs Bragg reflecting layer 207, P+GaAs cap layer 206 on liner layer 201 from bottom to up successively.
Wherein, N-AlGaAs/GaAs Bragg reflecting layer 204 is between N-GaAs resilient coating 203 and AlGaAs/InGaAs mqw active layer 205, therefore, N-AlGaAs/GaAs Bragg reflecting layer 204 has good reflex, can be with the light reflected back luminous zone or the window of vertical directive substrate layer, part has been improved the light characteristic that of light-emitting diode.In addition, in order to control production technology better and to go out light effect, the thickness of described Bragg reflecting layer should be selected certain scope.
In addition, P-AlGaAs/GaAs Bragg reflecting layer 207 and N-AlGaAs/GaAs Bragg reflecting layer 204 have constituted Fabry Perot resonator jointly.At this, in order to reach the good result of resonant cavity, two cover Bragg reflecting layers need be parallel to each other, simultaneously, in order to keep certain luminous intensity, the thickness of AlGaAs/InGaAs mqw active layer 205 also should be controlled within limits, at this, the thickness of preferred 940～960nm.
In addition, the thickness of P-AlGaAs/GaAs Bragg reflecting layer 207 and P+GaAs cap layer 206 also should be controlled in certain scope, make light outgoing better, at this, the thickness of preferred P-AlGaAs/GaAs Bragg reflecting layer 207 is 2 μ m～3 μ m, and the thickness of P+GaAs cap layer 206 is 0.5 μ m～1.5 μ m.
In a preferred embodiment, the thickness of AlGaAs/InGaAs mqw active layer 205 is 940nm, and the thickness of P-AlGaAs/GaAs Bragg reflecting layer 207 is 2 μ m, and the thickness of P+GaAs cap layer 206 is 0.5 μ m.
In preferred another embodiment, the thickness of AlGaAs/InGaAs mqw active layer is 960nm, and the thickness of P-AlGaAs/GaAs Bragg reflecting layer 207 is 3 μ m, and the thickness of P+GaAs cap layer 206 is 1.5 μ m.
In embodiment of the present utility model, in light-emitting diode structure, be provided with two Bragg reflecting layers, one of them N-AlGaAs/GaAs Bragg reflecting layer 204 is between, N-GaAs resilient coating 203 and AlGaAs/InGaAs mqw active layer 205, and another P-AlGaAs/GaAs Bragg reflecting layer 207 is between AlGaAs/InGaAs mqw active layer 205 and P+GaAs cap layer 206.These two Bragg reflecting layers in the light that active layer sends, also constitute resonant cavity in reflection, light is modulated, thereby improved the light exitance.
Light-emitting diode with said structure can make more light energy reach the angle of departure that can emit, and compares with the structure with a Bragg reflecting layer, has improved the luminous efficiency of light-emitting diode significantly.
In the superincumbent record,,, in infrarede emitting diode, use this structure, can realize good illumination efficiency by facts have proved though be that example illustrates with the light-emitting diode.
Though described principle of the present utility model and embodiment at the concrete structure of light-emitting diode above; but; under above-mentioned instruction of the present utility model; those skilled in the art can carry out various improvement and distortion on the basis of above-mentioned execution mode, and these improvement or distortion drop in the protection range of the present utility model.It will be understood by those skilled in the art that top specific descriptions just in order to explain the purpose of this utility model, are not to be used to limit the utility model.Protection range of the present utility model is limited by claim and equivalent thereof.
Claims (4)
1. a light-emitting diode is characterized in that,
On the liner layer, be formed with N+GaAs substrate, N-GaAs resilient coating, N-AlGaAs/GaAs Bragg reflecting layer, AlGaAs/InGaAs mqw active layer, P-AlGaAs/GaAs Bragg reflecting layer and P+GaAs cap layer from bottom to up.
2. light-emitting diode as claimed in claim 1 is characterized in that,
The thickness of described AlGaAs/InGaAs mqw active layer is 940～960nm.
3. light-emitting diode as claimed in claim 1 is characterized in that,
The thickness of described Bragg reflecting layer is 2 μ m～3 μ m.
4. light-emitting diode as claimed in claim 1 is characterized in that,
The thickness of described P+GaAs cap layer is 0.5～1.5 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201678401U CN201490230U (en) | 2009-07-30 | 2009-07-30 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201678401U CN201490230U (en) | 2009-07-30 | 2009-07-30 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201490230U true CN201490230U (en) | 2010-05-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201678401U Expired - Lifetime CN201490230U (en) | 2009-07-30 | 2009-07-30 | Light emitting diode |
Country Status (1)
| Country | Link |
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| CN (1) | CN201490230U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108133986A (en) * | 2017-11-27 | 2018-06-08 | 北京灵犀微光科技有限公司 | Light emitting diode and lighting device |
| CN108550663A (en) * | 2018-03-26 | 2018-09-18 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN112242642A (en) * | 2019-07-19 | 2021-01-19 | 全新光电科技股份有限公司 | Vertical cavity surface emitting laser diode (VCSEL) including AlGaAsP layer with compressive stress |
-
2009
- 2009-07-30 CN CN2009201678401U patent/CN201490230U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108133986A (en) * | 2017-11-27 | 2018-06-08 | 北京灵犀微光科技有限公司 | Light emitting diode and lighting device |
| CN108550663A (en) * | 2018-03-26 | 2018-09-18 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108550663B (en) * | 2018-03-26 | 2019-11-12 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN112242642A (en) * | 2019-07-19 | 2021-01-19 | 全新光电科技股份有限公司 | Vertical cavity surface emitting laser diode (VCSEL) including AlGaAsP layer with compressive stress |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100526 |