CN201402184Y - Novel infrared reading circuit based on Wheatstone bridge - Google Patents

Novel infrared reading circuit based on Wheatstone bridge Download PDF

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Publication number
CN201402184Y
CN201402184Y CN2009200854637U CN200920085463U CN201402184Y CN 201402184 Y CN201402184 Y CN 201402184Y CN 2009200854637 U CN2009200854637 U CN 2009200854637U CN 200920085463 U CN200920085463 U CN 200920085463U CN 201402184 Y CN201402184 Y CN 201402184Y
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China
Prior art keywords
circuit
wheatstone bridge
resistance
infrared
series connection
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Expired - Lifetime
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CN2009200854637U
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Chinese (zh)
Inventor
黄立
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Wuhan Guide Infrared Co Ltd
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Wuhan Guide Infrared Co Ltd
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Priority to CN2009200854637U priority Critical patent/CN201402184Y/en
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Abstract

The utility model relates to a novel infrared reading circuit based on a Wheatstone bridge. The circuit comprises four resistances, i.e. RA, RB, R1 and R2, as well as an amplifying circuit, an integrating circuit or a reading circuit, and is characterized in that RA and R2 connected in series are connected in parallel with RB and R1 connected in series to form the Wheatstone bridge, wherein the two terminals (A and B) of the parallel circuit are the voltage input terminals of the Wheatstone bridge, the position where RA and R2 are connected in series is Terminal D, and the position where RB and R1 are connected in series is Terminal C; and the terminals (C and D) are the output terminals of the bridge, and are connected with the amplifying circuit, the integrating circuit or the reading circuit respectively to form a loop. The two resistances (R1 and R2) are additionally designed on the reading circuit to form the Wheatstone bridge with RA and RB to realize the reading of infrared signals, and compared with a conventional circuit or an amplifying circuit with single-ended input, such a reading method has higher signal to noise ratio and signal change rate (detal V/V), thereby reducing the noise of an infrared detector to a lower level.

Description

New infrared sensing circuit based on Wheatstone bridge
Technical field
The utility model belongs to the infrared eye signal and reads application, is specifically related to the low noise new infrared sensing circuit of a kind of differential signal based on Wheatstone bridge.
Background technology
Along with the continuous progress of scientific and technological level, integrated circuit (IC) design and manufacturing technology have all obtained development faster, and this provides guarantee for further developing of infrared reading circuit technology.Along with infrared eye military and deepening continuously that civil area is used, people are also more and more higher to the requirement of infrared eye on performance.Mainly show lower noise, higher sensitivity, quicker response and rich functions etc. more.
And a wherein the most key performance requirement is exactly lower noise, and the height of noise level directly affects other performance of sensing circuit, even has determined the performance of whole infrared eye.The curtage signal itself that the infrared eye sensitive structure produces is very faint, and temperature noise of following, ground unrest etc. are bigger usually, therefore, how extracting faint infrared signal in bigger noise circumstance is the key point that designs in the infrared reading circuit.
Domestic and international many countries are all in the research of being devoted to the infrared eye sensing circuit, in the world as Raytheon company, DRS company, Flir-Indigo system house, the NEC of Japan and the SCD company of Israel of the U.S., the ULIS company of France etc.Domestic as 211 in Kunming, Shanghai Institute of Technical Physics, University Of Chongqing, Tsing-Hua University, University of Electronic Science and Technology etc.
The most common signal sensing circuit as shown in Figure 1 at present.R among the figure ABe the resistance of infrared eye sensitive structure part, resistance will change when it is subjected to the irradiation of infrared radiation; R BMaterial behavior and R AIdentical, difference is R BBe produced on the sensing circuit, and can not be subjected to the irradiation of infrared radiation.The sort circuit design can be eliminated certain temperature noise, but precision is not high, noise can not be reduced to floor level.
Summary of the invention
The utility model further reduces the noise level of sensing circuit part amp.in in order to overcome problem and the shortcoming that above-mentioned prior art exists, and provides a kind of differential signal based on Wheatstone bridge low noise new infrared sensing circuit.The utility model is by two resistance R of many again designs on sensing circuit 1And R 2, with R AAnd R BConstitute Wheatstone bridge and realize reading of infrared signal, this kind playback mode has higher signal to noise ratio (S/N ratio) and change rate signal Δ V/V than the amplifying circuit of custom circuit or single-ended input, the noise of infrared eye can be reduced to lower level like this.
The utility model is achieved in that the new infrared sensing circuit based on Wheatstone bridge, by R A, R B, R 1, R 2Four resistance, amplifying circuit, integrating circuit or sensing circuits are formed, and it is characterized in that: R AWith R 2Series connection, R BWith R 1Series connection, Wheatstone bridge of formation in parallel again, (A B) is the voltage input end of Wheatstone bridge, R at two ends in parallel AWith R 2Series connection place is the D end, R BWith R 1Series connection series connection place is the C end, and C, D two ends are the electric bridge output terminal, are connected to the loop with amplifying circuit, integrating circuit or signal read circuit respectively.
Described R AResistance is infrared-sensitive resistance.R BWith R AHave the same material characteristic, when the temperature of detector itself changes, R BWith R AWill identical variation takes place, but R BBe not subjected to the irradiation of infrared radiation, R BWith R AResistance equate.Described R 1, R 2Resistance is the resistance that identical material is made, and resistance equates, and R 1And R 2Be not subjected to the influence of infrared radiation.
R of the present utility model ABe the resistance of infrared eye sensitive structure, when infrared eye is received illuminated with infrared radiation, R AResistance will change; R BWith R AHave the same material characteristic, when the temperature of detector itself changes, R AWith R BWill identical variation takes place, but R BBe not subjected to the irradiation of infrared radiation; R 1And R 2For being produced on two identical resistance on the sensing circuit, R 1And R 2Be not subjected to the influence of infrared radiation.
R A, R B, R 1And R 2Constitute a Wheatstone bridge, side a and b is the voltage input end of electric bridge, and C end and D end are the signal output parts of Wheatstone bridge, also are the signal input parts of amplifying circuit, integrating circuit or signal read circuit.Do not having the radiation situation of infrared radiation, even the temperature of environment temperature and detector self changes, the static balancing point of electric bridge remains unchanged substantially, and the output signal at C, D two ends is zero; When illuminated with infrared radiation, electric bridge is with imbalance, and the output signal at C, D two ends is infrared signal.The noise of the infrared signal of output this moment will be littler.
Present infrared eye has developed and has been called the focal plane arrays (FPA) formula, therefore, both can make R respectively below each pixel B, R 1And R 2Resistance constitutes wheatstone bridge circuits, also can only use a wheatstone bridge circuits by each row, can save the power consumption and the cost of manufacture of chip area, reduction detector like this.
R A, R B, R 1And R 2Can utilize the CMOS technology of standard to make.
The utility model is by two resistance R of many again designs on sensing circuit 1And R 2, with R AAnd R BConstitute Wheatstone bridge and realize reading of infrared signal, the noise of infrared eye can be reduced to lower level like this.
Description of drawings
The infrared signal sensing circuit synoptic diagram of Fig. 1 for using at present;
Fig. 2 is an infrared signal sensing circuit synoptic diagram of the present utility model.
Embodiment
The utility model will be further described in conjunction with the accompanying drawings.
As shown in Figure 2, the utility model is based on the new infrared sensing circuit of Wheatstone bridge, by R A, R B, R 1, R 2Four resistance, amplifying circuit, integrating circuit or sensing circuits are formed R AWith R 2Series connection, R BWith R 1Series connection, Wheatstone bridge of formation in parallel again, (A B) is the voltage input end of Wheatstone bridge, R at two ends in parallel AWith R 2Series connection place is the D end, R BWith R 1Series connection series connection place is the C end, and C, D two ends are the electric bridge output terminal, are connected to the loop with amplifying circuit, integrating circuit or signal read circuit respectively.Described R AResistance is infrared-sensitive resistance, R BWith R AHave the same material characteristic, when the temperature of detector itself changes, R BWith R AWill identical variation takes place, but R BBe not subjected to the irradiation of infrared radiation, R BWith R AResistance equate.Described resistance is the resistance that identical material is made, and resistance equates, and R 1, R 2Be not subjected to the influence of infrared radiation.R A, R B, R 1And R 2Can utilize the CMOS technology of standard to make.
As shown in Figure 2, the utility model is by R A, R B, R 1, R 2Four resistance, amplifying circuit, integrating circuit or other follow-up signal sensing circuits are formed R AWith R 2Series connection, R BWith R 1Series connection, Wheatstone bridge of formation in parallel again, (A B) is the voltage input end of Wheatstone bridge, and C, D are the output terminal of electric bridge, links to each other with amplifying circuit, integrating circuit or signal read circuit at two ends in parallel.Described R AResistance is infrared-sensitive resistance, R BWith R AHave the same material characteristic, when the temperature of detector itself changes, R BWith R AWill identical variation takes place, but R BBe not subjected to the irradiation of infrared radiation, R BWith R AResistance equate.Described resistance is the resistance that identical material is made, and resistance equates, and R 1, R 2Be not subjected to the influence of infrared radiation.R A, R B, R 1And R 2Can utilize the CMOS technology of standard to make.
R of the present utility model ABe the resistance of infrared eye sensitive structure, when infrared eye is received illuminated with infrared radiation, R AResistance will change; R BWith R AHave the same material characteristic, when the temperature of detector itself changes, R AWith R BWill identical variation takes place, but R BBe not subjected to the irradiation of infrared radiation; R 1And R 2For being produced on two identical resistance on the sensing circuit, R 1And R 2Be not subjected to the influence of infrared radiation.
R A, R B, R 1And R 2Constitute a Wheatstone bridge, side a and b is the voltage input end of electric bridge, and C end and D end are the signal output parts of Wheatstone bridge, also are the signal input parts of amplifier.Do not having the radiation situation of infrared radiation, even the temperature of environment temperature and detector self changes, the static balancing point of electric bridge remains unchanged substantially, and the output signal at C, D two ends is zero; When illuminated with infrared radiation, electric bridge is with imbalance, and the output signal at C, D two ends is infrared signal.The noise of the infrared signal of output this moment will be littler.
Present infrared eye has developed and has been called the focal plane arrays (FPA) formula, therefore, both can make R respectively below each pixel B, R 1And R 2Resistance constitutes wheatstone bridge circuits, also can only use a wheatstone bridge circuits by each row, can save the power consumption and the cost of manufacture of chip area, reduction detector like this.

Claims (3)

1, based on the new infrared sensing circuit of Wheatstone bridge, by R A, R B, R 1, R 2Four resistance, amplifying circuit, integrating circuit or sensing circuits are formed, and it is characterized in that: R AWith R 2Series connection, R BWith R 1Series connection, Wheatstone bridge of formation in parallel again, (A B) is the voltage input end of Wheatstone bridge, R at two ends in parallel AWith R 2Series connection place is the D end, R BWith R 1Series connection series connection place is the C end, and C, D two ends are the electric bridge output terminal, are connected to the loop with amplifying circuit, integrating circuit or signal read circuit respectively.
2, the new infrared sensing circuit based on Wheatstone bridge according to claim 1 is characterized in that: described R AResistance is infrared-sensitive resistance, R BWith R AHave the same material characteristic, and resistance equates R BBe not subjected to the irradiation of infrared radiation.
3, the new infrared sensing circuit based on Wheatstone bridge according to claim 1 is characterized in that: described R 1, R 2Resistance is the resistance that identical material is made, and resistance equates.
CN2009200854637U 2009-04-30 2009-04-30 Novel infrared reading circuit based on Wheatstone bridge Expired - Lifetime CN201402184Y (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102333195A (en) * 2011-09-23 2012-01-25 东南大学 Active and passive imaging readout circuit working at linear mode APD (Avalanche Photo Diode) array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102333195A (en) * 2011-09-23 2012-01-25 东南大学 Active and passive imaging readout circuit working at linear mode APD (Avalanche Photo Diode) array
CN102333195B (en) * 2011-09-23 2013-06-05 东南大学 Active and passive imaging readout circuit working at linear mode APD (Avalanche Photo Diode) array

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Granted publication date: 20100210

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