CN101551276A - New type infrared read-out circuit based on wheatstone bridge - Google Patents
New type infrared read-out circuit based on wheatstone bridge Download PDFInfo
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- CN101551276A CN101551276A CNA2009100619129A CN200910061912A CN101551276A CN 101551276 A CN101551276 A CN 101551276A CN A2009100619129 A CNA2009100619129 A CN A2009100619129A CN 200910061912 A CN200910061912 A CN 200910061912A CN 101551276 A CN101551276 A CN 101551276A
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- circuit
- wheatstone bridge
- resistance
- infrared
- signal
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Abstract
The present invention relates to a new type infrared read-out circuit based on wheatstone bridge which is composed of four electric resistances, RA, RB, R1 and R2, an amplifying circuit, an integrator circuit or a read-out circuit. The circuit has characteristic that: RA connects with R2 in series, RB connects with R1 in series, then connects in parallel for constituting a wheatstone bridge, two ends (A, B) in parallel are the voltage input terminal of the wheatstone bridge, connection part of RA and RB in series are D terminal, connection part of RB and R1 in series are C terminal, C and D terminals are bridge output terminal which connect with the amplifying circuit, the integrator circuit or the signal reading electrocircuit for forming a loop. Two electric resistances R1 and R2 are set on the read-out circuit which can constitute the wheatstone bridge with RA and RB for realizing infrared signal readout, the readout method has higher signal-noise ratio and signal change rate delta V/V than normal circuit or the amplifying circuit with single input which can reduce the infrared detector noise to a lower lever.
Description
Technical field
The invention belongs to the infrared eye signal and read application, be specifically related to the low noise new infrared sensing circuit of a kind of differential signal based on Wheatstone bridge.
Background technology
Along with the continuous progress of scientific and technological level, integrated circuit (IC) design and manufacturing technology have all obtained development faster, and this provides guarantee for further developing of infrared reading circuit technology.Along with infrared eye military and deepening continuously that civil area is used, people are also more and more higher to the requirement of infrared eye on performance.Mainly show lower noise, higher sensitivity, quicker response and rich functions etc. more.
And a wherein the most key performance requirement is exactly lower noise, and the height of noise level directly affects other performance of sensing circuit, even has determined the performance of whole infrared eye.The curtage signal itself that the infrared eye sensitive structure produces is very faint, and temperature noise of following, ground unrest etc. are bigger usually, therefore, how extracting faint infrared signal in bigger noise circumstance is the key point that designs in the infrared reading circuit.
Domestic and international many countries are all in the research of being devoted to the infrared eye sensing circuit, in the world as Raytheon company, DRS company, Flir-Indigo system house, the NEC of Japan and the SCD company of Israel of the U.S., the ULIS company of France etc.Domestic as 211 in Kunming, Shanghai Institute of Technical Physics, University Of Chongqing, Tsing-Hua University, University of Electronic Science and Technology etc.
The most common signal sensing circuit as shown in Figure 1 at present.R among the figure
ABe the resistance of infrared eye sensitive structure part, resistance will change when it is subjected to the irradiation of infrared radiation; R
BMaterial behavior and R
AIdentical, difference is R
BBe produced on the sensing circuit, and can not be subjected to the irradiation of infrared radiation.The sort circuit design can be eliminated certain temperature noise, but precision is not high, noise can not be reduced to floor level.
Summary of the invention
The present invention further reduces the noise level of sensing circuit part amp.in in order to overcome problem and the shortcoming that above-mentioned prior art exists, and provides a kind of differential signal based on Wheatstone bridge low noise new infrared sensing circuit.The present invention is by two resistance R of many again designs on sensing circuit
1And R
2, with R
AAnd R
BConstitute Wheatstone bridge and realize reading of infrared signal, this kind playback mode has higher signal to noise ratio (S/N ratio) and change rate signal Δ V/V than the amplifying circuit of custom circuit or single-ended input, the noise of infrared eye can be reduced to lower level like this.
The present invention is achieved in that the new infrared sensing circuit based on Wheatstone bridge, by R
A, R
B, R
1, R
2Four resistance, amplifying circuit, integrating circuit or sensing circuits are formed, and it is characterized in that: R
AWith R
2Series connection, R
BWith R
1Series connection, Wheatstone bridge of formation in parallel again, (A B) is the voltage input end of Wheatstone bridge, R at two ends in parallel
AWith R
2Series connection place is the D end, R
BWith R
1Series connection series connection place is the C end, and C, D two ends are the electric bridge output terminal, are connected to the loop with amplifying circuit, integrating circuit or signal read circuit respectively.
Described R
AResistance is infrared-sensitive resistance.R
BWith R
AHave the same material characteristic, when the temperature of detector itself changes, R
BWith R
AWill identical variation takes place, but R
BBe not subjected to the irradiation of infrared radiation, R
BWith R
AResistance equate.Described R
1, R
2Resistance is the resistance that identical material is made, and resistance equates, and R
1And R
2Be not subjected to the influence of infrared radiation.
R of the present invention
ABe the resistance of infrared eye sensitive structure, when infrared eye is received illuminated with infrared radiation, R
AResistance will change; R
BWith R
AHave the same material characteristic, when the temperature of detector itself changes, R
AWith R
BWill identical variation takes place, but R
BBe not subjected to the irradiation of infrared radiation; R
1And R
2For being produced on two identical resistance on the sensing circuit, R
1And R
2Be not subjected to the influence of infrared radiation.
R
A, R
B, R
1And R
2Constitute a Wheatstone bridge, side a and b is the voltage input end of electric bridge, and C end and D end are the signal output parts of Wheatstone bridge, also are the signal input parts of amplifying circuit, integrating circuit or signal read circuit.Do not having the radiation situation of infrared radiation, even the temperature of environment temperature and detector self changes, the static balancing point of electric bridge remains unchanged substantially, and the output signal at C, D two ends is zero; When illuminated with infrared radiation, electric bridge is with imbalance, and the output signal at C, D two ends is infrared signal.The noise of the infrared signal of output this moment will be littler.
Present infrared eye has developed and has been called the focal plane arrays (FPA) formula, therefore, both can make R respectively below each pixel
B, R
1And R
2Resistance constitutes wheatstone bridge circuits, also can only use a wheatstone bridge circuits by each row, can save the power consumption and the cost of manufacture of chip area, reduction detector like this.
R
A, R
B, R
1And R
2Can utilize the CMOS technology of standard to make.
The present invention is by two resistance R of many again designs on sensing circuit
1And R
2, with R
AAnd R
BConstitute Wheatstone bridge and realize reading of infrared signal, the noise of infrared eye can be reduced to lower level like this.
Description of drawings
The infrared signal sensing circuit synoptic diagram of Fig. 1 for using at present;
Fig. 2 is an infrared signal sensing circuit synoptic diagram of the present invention.
Embodiment
The invention will be further described in conjunction with the accompanying drawings.
As shown in Figure 2, the present invention is based on the new infrared sensing circuit of Wheatstone bridge, by R
A, R
B, R
1, R
2Four resistance, amplifying circuit, integrating circuit or sensing circuits are formed R
AWith R
2Series connection, R
BWith R
1Series connection, Wheatstone bridge of formation in parallel again, (A B) is the voltage input end of Wheatstone bridge, R at two ends in parallel
AWith R
2Series connection place is the D end, R
BWith R
1Series connection series connection place is the C end, and C, D two ends are the electric bridge output terminal, are connected to the loop with amplifying circuit, integrating circuit or signal read circuit respectively.Described R
AResistance is infrared-sensitive resistance, R
BWith R
AHave the same material characteristic, when the temperature of detector itself changes, R
BWith R
AWill identical variation takes place, but R
BBe not subjected to the irradiation of infrared radiation, R
BWith R
AResistance equate.Described resistance is the resistance that identical material is made, and resistance equates, and R
1, R
2Be not subjected to the influence of infrared radiation.R
A, R
B, R
1And R
2Can utilize the CMOS technology of standard to make.
As shown in Figure 2, the present invention is by R
A, R
B, R
1, R
2Four resistance, amplifying circuit, integrating circuit or other follow-up signal sensing circuits are formed R
AWith R
2Series connection, R
BWith R
1Series connection, Wheatstone bridge of formation in parallel again, (A B) is the voltage input end of Wheatstone bridge, and C, D are the output terminal of electric bridge, links to each other with amplifying circuit, integrating circuit or signal read circuit at two ends in parallel.Described R
AResistance is infrared-sensitive resistance, R
BWith R
AHave the same material characteristic, when the temperature of detector itself changes, R
BWith R
AWill identical variation takes place, but R
BBe not subjected to the irradiation of infrared radiation, R
BWith R
AResistance equate.Described resistance is the resistance that identical material is made, and resistance equates, and R
1, R
2Be not subjected to the influence of infrared radiation.R
A, R
B, R
1And R
2Can utilize the CMOS technology of standard to make.
R of the present invention
ABe the resistance of infrared eye sensitive structure, when infrared eye is received illuminated with infrared radiation, R
AResistance will change; R
BWith R
AHave the same material characteristic, when the temperature of detector itself changes, R
AWith R
BWill identical variation takes place, but R
BBe not subjected to the irradiation of infrared radiation; R
1And R
2For being produced on two identical resistance on the sensing circuit, R
1And R
2Be not subjected to the influence of infrared radiation.
R
A, R
B, R
1And R
2Constitute a Wheatstone bridge, side a and b is the voltage input end of electric bridge, and C end and D end are the signal output parts of Wheatstone bridge, also are the signal input parts of amplifier.Do not having the radiation situation of infrared radiation, even the temperature of environment temperature and detector self changes, the static balancing point of electric bridge remains unchanged substantially, and the output signal at C, D two ends is zero; When illuminated with infrared radiation, electric bridge is with imbalance, and the output signal at C, D two ends is infrared signal.The noise of the infrared signal of output this moment will be littler.
Present infrared eye has developed and has been called the focal plane arrays (FPA) formula, therefore, both can make R respectively below each pixel
B, R
1And R
2Resistance constitutes wheatstone bridge circuits, also can only use a wheatstone bridge circuits by each row, can save the power consumption and the cost of manufacture of chip area, reduction detector like this.
Claims (3)
1, based on the new infrared sensing circuit of Wheatstone bridge, by R
A, R
B, R
1, R
2Four resistance, amplifying circuit, integrating circuit or sensing circuits are formed, and it is characterized in that: R
AWith R
2Series connection, R
BWith R
1Series connection, Wheatstone bridge of formation in parallel again, (A B) is the voltage input end of Wheatstone bridge, R at two ends in parallel
AWith R
2Series connection place is the D end, R
BWith R
1Series connection series connection place is the C end, and C, D two ends are the electric bridge output terminal, are connected to the loop with amplifying circuit, integrating circuit or signal read circuit respectively.
2, the new infrared sensing circuit based on Wheatstone bridge according to claim 1 is characterized in that: described R
AResistance is infrared-sensitive resistance, R
BWith R
AHave the same material characteristic, and resistance equates R
BBe not subjected to the irradiation of infrared radiation.
3, the new infrared sensing circuit based on Wheatstone bridge according to claim 1 is characterized in that: described R
1, R
2Resistance is the resistance that identical material is made, and resistance equates.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNA2009100619129A CN101551276A (en) | 2009-04-30 | 2009-04-30 | New type infrared read-out circuit based on wheatstone bridge |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2009100619129A CN101551276A (en) | 2009-04-30 | 2009-04-30 | New type infrared read-out circuit based on wheatstone bridge |
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CN101551276A true CN101551276A (en) | 2009-10-07 |
Family
ID=41155642
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CNA2009100619129A Pending CN101551276A (en) | 2009-04-30 | 2009-04-30 | New type infrared read-out circuit based on wheatstone bridge |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102840919A (en) * | 2012-09-12 | 2012-12-26 | 电子科技大学 | Parallel-serial conversion circuit for reading circuit of infrared focal plane array detector |
CN103162842A (en) * | 2013-04-02 | 2013-06-19 | 江苏物联网研究发展中心 | Diode infrared detector readout integrated circuit with self-stabilization zero circuit |
CN109708997A (en) * | 2019-02-21 | 2019-05-03 | 长江大学 | A kind of device and method of detection viscous crude starting pressure |
-
2009
- 2009-04-30 CN CNA2009100619129A patent/CN101551276A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102840919A (en) * | 2012-09-12 | 2012-12-26 | 电子科技大学 | Parallel-serial conversion circuit for reading circuit of infrared focal plane array detector |
CN102840919B (en) * | 2012-09-12 | 2014-06-11 | 电子科技大学 | Parallel-serial conversion circuit for reading circuit of infrared focal plane array detector |
CN103162842A (en) * | 2013-04-02 | 2013-06-19 | 江苏物联网研究发展中心 | Diode infrared detector readout integrated circuit with self-stabilization zero circuit |
CN109708997A (en) * | 2019-02-21 | 2019-05-03 | 长江大学 | A kind of device and method of detection viscous crude starting pressure |
CN109708997B (en) * | 2019-02-21 | 2020-06-26 | 长江大学 | Device and method for detecting starting pressure of thickened oil |
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Open date: 20091007 |