CN201376892Y - Magnetically driven micro inertial sensor for increasing detection capacitance - Google Patents
Magnetically driven micro inertial sensor for increasing detection capacitance Download PDFInfo
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- CN201376892Y CN201376892Y CN200920117239U CN200920117239U CN201376892Y CN 201376892 Y CN201376892 Y CN 201376892Y CN 200920117239 U CN200920117239 U CN 200920117239U CN 200920117239 U CN200920117239 U CN 200920117239U CN 201376892 Y CN201376892 Y CN 201376892Y
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Abstract
The utility model relates to a magnetically driven micro inertial sensor for increasing a detection capacitance. An existing product limits the increase of the mass of a sensor vibrator and the decrease of the distance between polar plates. In the utility model, a sensor mass block is a rectangular silicon which is etched with grid strips, two ends thereof are connected with an anchor point through a silicon support beam, silicon strips are respectively arranged at two sides, a ring groove is etched at the middle of a driver mass block, a detection silicon strip is arranged at one side which is corresponded with the sensor mass block. A driver solder joint is arranged at a position of the driver mass block where the driver mass block is close to an outside anchor point of a U-shaped beam, the driver solder joint is connected with a driver anchor point. An outside current driving solder joint is arranged at corresponded two anchor points of a driver, and a metal driving wire is arranged among the solder joints which are corresponded with an outside driving current. An interdigital aluminum electrode is arranged at the surface of a glass substrate, each grid strip of the sensor mass block is corresponded with each pair of split-finger in the interdigital aluminum electrode. The process of the utility model is simple, and is beneficial to lowering the cost and increasing the rate of finished product.
Description
Technical field
The utility model belongs to the micro-electronic mechanical skill field, relates to a kind of micro-inertia sensor, is specifically related to a kind of magnetic and drives the micro-inertia sensor that increases detection electric capacity.
Background technology
Recently for over ten years, the accelerometer of making of micro mechanical technology has obtained development rapidly.Its main acceleration detection technology has pressure drag detection, piezoelectric detection, heat detection, resonance detection, electromagnetic detection, light detection, tunnel current detection and capacitance detecting etc.In addition, also have some accelerometers, as acceleration by light degree meter, electromagnetic accelerometer, capacitance accelerometer etc. based on other detection technique.The development of acceleration by light degree meter mainly is for the advantage in conjunction with light and micromechanics, makes the sensor of the high electromagnetic shielding or the good linearity.In these sensors, capacitance acceleration transducer, temperature coefficient is little, highly sensitive owing to having, and advantages such as good stability are class acceleration transducers of developing at most at present.The preparation method of micro-mechanical capacitance type sensor has surface micromachined method and bulk silicon micro mechanic processing method.Adopt surface micromachined technology can and ic process compatibility, thereby the peripheral circuit of integrated sensor, cost is low, but the noise of sensor is big, poor stability, range and bandwidth are little.Adopt the bulk silicon micro mechanic processing technology can improve the quality of sensor chip, thereby reduce noise, improve stability, improve sensitivity.Shortcoming is that volume is big slightly, but can produce the micro-mechanical inertia sensor of superhigh precision.In order to obtain higher measurement sensitivity and to reduce the complexity of peripheral circuit, can be by quality that increases sensor vibration generator and the method that increases the static test electric capacity of sensor, thus reduce mechanical noise and circuit noise.And for the capacitance type sensor with the broach shape of bulk silicon technological such as dark reaction particle etching (Deep RIE) processing, the depth-to-width ratio of its plates capacitance is generally less than 30: 1, and this quality that has just limited sensor vibration generator increases and the reducing of polar plate spacing.And for little spacing plates capacitance, its press mold air damping is bigger, has increased the mechanical noise of sensor.The method one that reduces this mechanical noise is can be by etching amortisseur bar on pole plate, the one, electric capacity is changed into the mode of variable area, and make damping show as slide-film damping, and one of method that reduces electronic noise is to detect electric capacity by increasing.
Summary of the invention
The purpose of this utility model is exactly at the deficiencies in the prior art, provides a kind of magnetic of ultrahigh resolution to drive the micro-inertia sensor that increases detection electric capacity.
The utility model comprises glass substrate, sensor mass, drive mass piece.
Sensor mass main body is the rectangle silicon chip, and the two ends of sensor mass are connected with the sensor anchor point by U-shaped sensor silicon brace summer, and the sensor anchor point is fixedly installed on the glass substrate; The dual-side of sensor mass is symmetrically arranged with n group silicon strip group respectively, and every group of silicon strip group comprises the m bar silicon strip that be arranged in parallel, n 〉=1, m 〉=1, and the quantity of the silicon strip of every group of silicon strip group is identical, and every silicon strip is vertical with sensor mass side; Be etched with the grid-shaped strip parallel on the sensor mass with silicon strip.
N the corresponding n group of drive mass piece silicon strip group is provided with, the position at four angles of corresponding each drive mass piece is provided with the driver anchor point, the driver anchor point is fixedly installed on the glass substrate, an end points of U-shaped driver silicon brace summer is connected with the driver anchor point, another end points and drive mass piece one jiao be connected; One side of each drive mass piece and sensor mass correspondence is provided with the m bar and detects silicon strip, and detecting silicon strip is the broach shape, and between cog is an amortisseur bar; The detection silicon strip is parallel with the silicon strip of sensor mass side, the position is corresponding, and the silicon strip that the sensor mass connects is arranged in a crossed manner with corresponding detection silicon strip, forms and detects electric capacity; The side's of being carved with cannelure in the middle of the drive mass piece, the groove width of square circular trough is less than the silicon strip and the corresponding spacing that detects silicon strip of sensor mass; The side of the corresponding U-shaped driver of each drive mass piece silicon brace summer is provided with metal driving lead, and plain conductor and drive mass interblock are provided with insulating barrier.
Be respectively arranged with sensor mass solder joint on two sensor anchor points at the two ends of sensor mass; Two driver anchor points that each drive mass piece is provided with one side correspondence of metal driving lead are provided with foreign current driving solder joint, U-shaped driver silicon brace summer surface is provided with plain conductor, one end of plain conductor drives solder joint with foreign current and is connected, and the other end is connected with an end of metal driving lead; One in two other driver anchor point of each drive mass piece is provided with the driver solder joint, and the driver anchor point of the drive mass piece that another is corresponding with sensor mass opposite side connects by the aluminium connecting line.
The corresponding sensor mass of glass substrate surface position is provided with interdigital aluminium electrode, and every pair on the sensor mass in every bar-grating shape bar of etching and the interdigital aluminium electrode is interdigital corresponding, and interdigital aluminium electrode is by aluminium solder joint access test signal voltage.
The utility model conceives substantially that to be that sensor detects the initial designs spacing of electric capacity bigger, thereby solve dark reaction particle etching depth-to-width ratio and can not do thick restriction less than the quality of 30: 1 pairs of sensor vibration generator, the microdrive by field drives then, reduce to detect the electric capacity spacing, thereby the initial detecting electric capacity of increase sensor is to reduce the testing circuit noise.
The utility model is etching grid shape groove on the sensor mass also, and and substrate on interdigital aluminium electrode form Differential Detection electric capacity and further reduce circuit noise, and interdigital differential shows as the slide-film damping characteristic on grid-shaped strip and the glass substrate, thereby also reduced Blang's noise.
Thereby can reducing the press mold air damping by etching accordion amortisseur bar on the detection silicon strip of drive mass piece, the utility model can reduce mechanical noise.In addition, can also change the range and the response characteristic of sensor by the size that changes U-shaped silicon brace summer and mass.
The magnetic that the utility model provides drives the micro-inertia sensor that increases detection electric capacity and has increased the oscillator quality greatly, thereby reduced Blang's noise, and reduced the capacitor plate spacing by the driver of field drives, and on the detection silicon strip of drive mass piece etching accordion amortisseur bar, increased detection electric capacity, reduced the pressing mold air damping, thereby mechanical noise and circuit noise have been reduced, and on the sensor mass during newly-increased grid-shaped strip capacitance difference componental movement air damping show as slide-film damping, thereby reduced Blang's noise, also increased detection electric capacity simultaneously.The high accuracy micro-inertia sensor novel structure that the utility model relates to, resolution ratio and highly sensitive, manufacture craft is simple, helps reducing cost and improving yield rate, is a kind of micro-inertia sensor that can practical application.
Description of drawings
Fig. 1 is the structural representation of the utility model micro-inertia sensor;
Fig. 2 is the utility model glass substrate surface schematic diagram.
The specific embodiment
Below in conjunction with embodiment and accompanying drawing the utility model is further specified.
As depicted in figs. 1 and 2, a kind of micro-inertia sensor of magnetic driving increase detection electric capacity comprises glass substrate 19, sensor mass 15, drive mass piece 4.
Four drive mass pieces 4 are in the bilateral symmetry setting of sensor mass 15, the position at four angles of corresponding each drive mass piece 4 is provided with driver anchor point 8, driver anchor point 8 is fixedly installed on the glass substrate 19, an end points of U-shaped driver silicon brace summer 13 is connected with driver anchor point 8, another end points and drive mass piece 4 one jiao be connected.One side of each drive mass piece 4 is provided with three and detects silicon strip 9, and detecting silicon strip 9 is the broach shape, and between cog is an amortisseur bar; It is parallel with the silicon strip 11 of sensor mass side to detect silicon strip 9, and silicon strip 11 is arranged in a crossed manner with corresponding detection silicon strip 9, forms and detects electric capacity.The side's of being carved with cannelure 10 in the middle of the drive mass piece 4, the groove width of square circular trough 10 is less than the silicon strip and the corresponding spacing that detects silicon strip of sensor mass.The side of each drive mass piece 4 corresponding U-shaped driver silicon brace summer 13 is provided with metal driving lead 12.
Be respectively arranged with sensor mass solder joint 6 on two sensor anchor points 7 at the two ends of sensor mass 15.Two driver anchor points 8 that each drive mass piece 4 is provided with one side correspondence of metal driving lead 12 are provided with foreign current driving solder joint 1, U-shaped driver silicon brace summer 13 surfaces are provided with plain conductor 2, one end of plain conductor 2 drives solder joint 1 with foreign current and is connected, and the other end is connected with an end of metal driving lead 12; One in each drive mass piece 4 two other driver anchor point is provided with driver solder joint 3, and the driver anchor point of the drive mass piece 4 that another is corresponding with sensor mass 15 opposite sides connects by aluminium connecting line 17.
The corresponding sensor mass of glass substrate surface position is provided with interdigital aluminium electrode 18, and every pair on the sensor mass in every bar-grating shape bar 14 of etching and the interdigital aluminium electrode is interdigital corresponding, and interdigital aluminium electrode is by aluminium solder joint 16 access test signal voltage.
Making this magnetic, to drive the technological process that increases the micro-inertia sensor that detects electric capacity as follows:
A. form the silicon oxide masking film layer after the low-resistance silicaization;
B. the silica of hydrofluoric acid corrosion of silicon one side forms corrosion suspension window, keeps the silica of another side;
C. make mask with silica,, thereby form the differential capacitance spacing with the suspension zone of alkaline solution such as potassium hydroxide solution corrosion sensor mass and drive mass piece;
D. remove silica with hydrofluoric acid, keep the silica of silicon another side;
E. select for use close insulating pad of thermal coefficient of expansion and silicon such as Pyrex7740 sheet glass as substrate, and on this substrate, form interdigital electrode, connecting line and each outside anchor point that connects thereof of aluminum by evaporation or sputter;
F. with acid solution such as SPA corrosion aluminium electrode;
G. adopt 380 degrees centigrade of temperature, on the voltage 800V, fluted of silicon chip and sheet glass aluminium electrode surface bonding is arranged;
H. silicon chip photoetching forms the connecting hole between movable mass and outside anchor point;
I. sputtered aluminum on silicon chip, and photoetching forms the mass solder joint, and foreign current drives lead and outside solder joint thereof, the outside solder joint of driver with photoresist as mask layer, corrodes aluminium with concentrated phosphoric acid, form electrode shape, float the silica that exposes with buffered hydrofluoric acid solution then;
J. utilize deep reaction ion etching technology (DeepRIE) etch silicon, formation is suspended in the movable sensitive device mass on the dielectric substrate, be fixed on the anchor point on the dielectric substrate, U-shaped silicon brace summer, fixed fingers, equidistant grid-shaped strip on the movable sensitive device mass and movable silicon strip thereof detect silicon strip and accordion amortisseur bar.
Produce the high accuracy micro-inertia sensor that the utility model relates to by above processing step.In conjunction with Fig. 1, Fig. 2 Fundamentals of Sensors are described.The spacing of the silicon strip of sensor mass and detection silicon strip is greater than the groove width of circular trough on the drive mass piece.
The driver that is positioned at correspondence upper end, sensor mass both sides, be connected respectively on the encapsulation shell pin introducing external drive electric current solder joint with gold thread with outside gold ball bonding technology, and insert constant-current source.The driver that is positioned at corresponding lower end, sensor mass both sides, it is introduced external drive electric current solder joint and is connected respectively on the encapsulation shell pin, and the constant-current source of access and upper end driver opposite phase.The driver solder joint is connected to the encapsulation shell pin, represents with V1, is positioned at sensor mass diagonal, and the solder joint corresponding with this driver solder joint also be connected to the encapsulation shell pin, represents with V2.The sensor solder joint also is connected to the encapsulation shell pin, and is connected to ground.With the micromechanical process processed sensor time, circular trough groove width (d1) and silicon strip are bigger with the spacing (d2) of corresponding detection silicon strip, can process thicker sensor mass piece, thereby the mass quality are bigger.In encapsulation shell cap, suitable uniform magnetic field is set, drive the drive mass piece and it is pull-in on the ring block at the Lorentz force that produces on the metal driving lead, at this moment, the static initial capacitance spacing of testing sensor is d2-d1, thereby the detection electric capacity of sensor increases greatly.Holding respectively at V1, V2 again, loading wave signal sensor mass is connected to ground by anchor point.When on the sensitive direction acceleration signal being arranged, because the effect of inertia force, produce displacement, thereby cause the stack area change of the differential capacitance that grid-shaped strip electrode on the sensor and interdigital aluminium electrode are formed and silicon strip that the sensor mass is connected and detect the spacing variation of silicon strip, and then cause the variation that electric capacity is bigger, this changes the big or small linear of electric capacity and outside inertial signal, by detecting the size that capacitance variations just can obtain acceleration on the sensitive direction.
The high accuracy micro-inertia sensor that the utility model relates to, because broach electric capacity spacing can drive driver with Lorentz force and reduce, the grid-shaped strip electric capacity that slide-film damping is arranged on the movable mass, and be etched with the accordion amortisseur bar on the detection silicon strip of drive mass piece, these factors reduce the mechanical noise of sensor and circuit noise greatly, thereby make sensor can reach very high precision, the utility model etches anti-adhesive short circuit silico briquette on the drive mass piece, prevent to be short-circuited between electric capacity and permanent adhesive.The utility model adopts micro mechanical technology to make simultaneously, and technology is simple, helps improving yield rate and reduces manufacturing cost.
Claims (1)
1, a kind of magnetic drives and increases the micro-inertia sensor that detects electric capacity, comprises glass substrate, sensor mass, drive mass piece, it is characterized in that:
Sensor mass main body is the rectangle silicon chip, and the two ends of sensor mass are connected with the sensor anchor point by U-shaped sensor silicon brace summer, and the sensor anchor point is fixedly installed on the glass substrate; The dual-side of sensor mass is symmetrically arranged with n group silicon strip group respectively, and every group of silicon strip group comprises the m bar silicon strip that be arranged in parallel, n 〉=1, m 〉=1, and the quantity of the silicon strip of every group of silicon strip group is identical, and every silicon strip is vertical with sensor mass side; Be etched with the grid-shaped strip parallel on the sensor mass with silicon strip;
N the corresponding n group of drive mass piece silicon strip group is provided with, the position at four angles of corresponding each drive mass piece is provided with the driver anchor point, the driver anchor point is fixedly installed on the glass substrate, an end points of U-shaped driver silicon brace summer is connected with the driver anchor point, another end points and drive mass piece one jiao be connected; One side of each drive mass piece and sensor mass correspondence is provided with the m bar and detects silicon strip, and detecting silicon strip is the broach shape, and between cog is an amortisseur bar; The detection silicon strip is parallel with the silicon strip of sensor mass side, the position is corresponding, and the silicon strip that the sensor mass connects is arranged in a crossed manner with corresponding detection silicon strip, forms and detects electric capacity; The side's of being carved with cannelure in the middle of the drive mass piece, the groove width of square circular trough is less than the silicon strip and the corresponding spacing that detects silicon strip of sensor mass; The side of the corresponding U-shaped driver of each drive mass piece silicon brace summer is provided with metal driving lead, and plain conductor and drive mass interblock are provided with insulating barrier;
Be respectively arranged with sensor mass solder joint on two sensor anchor points at the two ends of sensor mass; Two driver anchor points that each drive mass piece is provided with one side correspondence of metal driving lead are provided with foreign current driving solder joint, U-shaped driver silicon brace summer surface is provided with plain conductor, one end of plain conductor drives solder joint with foreign current and is connected, and the other end is connected with an end of metal driving lead; One in two other driver anchor point of each drive mass piece is provided with the driver solder joint, and the driver anchor point of the drive mass piece that another is corresponding with sensor mass opposite side connects by the aluminium connecting line;
The corresponding sensor mass of glass substrate surface position is provided with interdigital aluminium electrode, and every pair on the sensor mass in every bar-grating shape bar of etching and the interdigital aluminium electrode is interdigital corresponding, and interdigital aluminium electrode is by aluminium solder joint access test signal voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920117239U CN201376892Y (en) | 2009-04-07 | 2009-04-07 | Magnetically driven micro inertial sensor for increasing detection capacitance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920117239U CN201376892Y (en) | 2009-04-07 | 2009-04-07 | Magnetically driven micro inertial sensor for increasing detection capacitance |
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| CN201376892Y true CN201376892Y (en) | 2010-01-06 |
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| CN200920117239U Expired - Lifetime CN201376892Y (en) | 2009-04-07 | 2009-04-07 | Magnetically driven micro inertial sensor for increasing detection capacitance |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101531334B (en) * | 2009-04-07 | 2011-05-11 | 杭州电子科技大学 | Magnetic drive micro-inertial sensor for increasing detection capacitance and preparation method |
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2009
- 2009-04-07 CN CN200920117239U patent/CN201376892Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101531334B (en) * | 2009-04-07 | 2011-05-11 | 杭州电子科技大学 | Magnetic drive micro-inertial sensor for increasing detection capacitance and preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20100106 Effective date of abandoning: 20090407 |