CN201364201Y - Device for measuring temperature field of semiconductor light source - Google Patents

Device for measuring temperature field of semiconductor light source Download PDF

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Publication number
CN201364201Y
CN201364201Y CNU2009200532370U CN200920053237U CN201364201Y CN 201364201 Y CN201364201 Y CN 201364201Y CN U2009200532370 U CNU2009200532370 U CN U2009200532370U CN 200920053237 U CN200920053237 U CN 200920053237U CN 201364201 Y CN201364201 Y CN 201364201Y
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China
Prior art keywords
infrared
infrared imaging
semiconductor light
imaging module
temperature field
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Expired - Fee Related
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CNU2009200532370U
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Chinese (zh)
Inventor
李学夔
谭海曙
黄杨程
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Individual
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Individual
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Priority to CNU2009200532370U priority Critical patent/CN201364201Y/en
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Publication of CN201364201Y publication Critical patent/CN201364201Y/en
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Abstract

The utility model discloses a device for measuring the temperature field of a semiconductor light source. The device can measure, monitor and analyze the temperature field of the semiconductor light source in a real-time manner in the production process, and with the help of a software for monitoring the temperature field of the semiconductor light source, monitors the product quality in a real-time online manner, discovers devices with fault hidden dangers, and timely regulates a technological parameter to improve the production yield. The measuring device comprises an infrared imaging module and a power source, wherein, the infrared imaging module conducts infrared radiation imaging on a semiconductor light source target and transmits the processed image data to a computer; the computer receives the infrared image data through a data interface of the infrared imaging module and transmits operation commands to the infrared imaging module; and the power source provides required steady work power for the infrared imaging module.

Description

The semiconductor light sources temperature field measuring apparatus
Technical field
The utility model relates to a kind of device of in process of production semiconductor light-source temperature field being measured.
Background technology
Current, along with the energy shortage problem becomes increasingly conspicuous, adopt energy-saving lighting fitting to become the important means of energy savings.With respect to the traditional lighting light source, semiconductor illuminating light source LED is without any pollution, and electric energy can reach more than 90%.At present to enter the significant obstacle that average family obtains widespread adoption be exactly on the high side to semiconductor illuminating light source, is exactly that yield rate is lower and cause semiconductor illuminating light source main cause on the high side.In the factor that influences the semiconductor quality, the temperature of PN junction is a main factor, and it directly has influence on serviceable life, reliability and the light extraction efficiency of semiconductor light sources.The main means of estimating the PN junction temperature at present are to adopt the evaluating system thermal resistance to calculate junction temperature again, or assess the rationality of the hot system design of optical semiconductor source module or semiconductor lamp by the method for light source module being carried out aging test.But these means of testing precision are low, time-consuming, can't accomplish real-time, can not satisfy batch production requirement.
The course of the existing many decades of the application of infrared technique.Early stage application mainly is to carry out around military purposes, and in recent years, along with the development of non-refrigeration focal surface detector array, the cost of Primary Component descends, and infrared thermal imaging technique has also obtained very big expansion at civil area.According to statistics, its annual growth of non-refrigeration focal surface thermal imaging system has surpassed 50%, equipment such as present infrared thermography have been applied in medical treatment and power equipment context of detection, but also are not applied in the temperature field measurement and analytic system of semiconductor light sources both at home and abroad.
Summary of the invention
The purpose of this utility model is to provide a kind of semiconductor light sources temperature field measuring apparatus, it can be measured in real time, monitor and analyze semiconductor light-source temperature field in process of production, by means of semiconductor light sources temperature field monitoring of software, the real time and on line monitoring product quality, discovery has the device of potential faults, and in time the adjusting process parameter is to improve the finished product rate.
The technical solution that the utility model proposed is such: a kind of semiconductor light sources temperature field measuring apparatus, this measurement mechanism comprises: the infrared imaging module, the semiconductor light sources target is carried out the infrared radiation imaging, and process the image into data and export computing machine to;
Computing machine, the data-interface reception infrared patterns data by the infrared imaging module are transferred to the infrared imaging module with operational order;
Power supply provides required stable working power to the infrared imaging module.
Described infrared imaging module comprises infrared lens, electronic focusing module, sequential driving circuit, infrared imaging pellet, A/D change-over circuit, signal processing circuit and data-interface, infrared lens focuses on infrared light on the infrared imaging chip, and be converted to simulating signal, the sequential driving circuit provides the clock signal that comprises clock signal, reset signal, look-at-me to infrared imaging chip, the A/D change-over circuit is converted into digital signal with simulating signal, through signal processing circuit proofread and correct, filtering and enhancing, and export data-interface to.
Compared with prior art, the utlity model has following beneficial effect:
(1) can carry out temperature field measurement to online LED semiconductor light sources: this device utilizes infrared thermal imaging technique that invisible LED temperature field " thermal imagery " is transformed into visible images, the LED temperature field is monitored in real time and analyzed, by the temperature field monitoring of software, whether the product in the monitoring industrial processes defective occurs, after finding that the LED of potential faults is arranged, be about to it and clean it out, product quality is guaranteed reliably.
(2) by real-time monitoring and analysis, can in time adjust, optimize technological parameter, thereby improve the yield rate of product, reduce production cost of products at line products to product.
(3) this device also can be applied in semiconductor lighting module and semiconductor lamp manufacturing enterprise, and analysis is directly estimated in the distribution in the temperature field of semiconductor lighting module and semiconductor lamp, and whether assess its hot system design reasonable.
Description of drawings
Fig. 1 is the circuit block diagram of the semiconductor light sources temperature field measuring apparatus of an embodiment of the utility model.
Embodiment
By following embodiment the utility model is further elaborated.
Referring to shown in Figure 1, a kind of semiconductor light sources LED temperature field measuring apparatus is made up of infrared imaging module 1, computing machine 2 and power supply 3.Infrared imaging module 1 comprises infrared lens 1-1, electronic focusing module 1-2, sequential driving circuit 1-3, infrared imaging pellet 1-4, A/D change-over circuit 1-5, signal processing circuit 1-6 and data-interface 1-7.
Infrared lens 1-1 reflects visible light, infrared light is focused on the infrared imaging chip 1-4, this routine infrared imaging chip 1-4 adopts the infrared imaging chip of French ULIS company, this chip is made of 384*288 pixel, each pixel is realized infrared signal is converted to analog electrical signal according to the eigenwert of the infrared signal intensity change that enters camera lens oneself.Sequential driving circuit 1-3 provides the needed clock signal of infrared imaging chip 1-4 operate as normal (clock signal clk, reset signal reset, look-at-me int etc.), and infrared imaging chip 1-4 just can export the response of each pixel according to these clock signals.The analog electrical signal that A/D change-over circuit 1-5 sends here front end carries out analog-to-digital conversion, and simulating signal is converted into digital signal since temperature resolution to reach ± 2 ℃, so 14 AD converter has been adopted in A/D conversion.Signal processing circuit 1-6 finishes the work such as correction, filtering and enhancing to the digital signal of importing from A/D change-over circuit 1-5.Digital signal after the processing is transferred to host computer by data-interface 1-7, carries out the demonstration and the analysis of image.This routine data-interface 1-7 adopts the USB2.0 interface.
The course of work is as follows: at first infrared lens 1-1 is aimed at tested semiconductor light sources target, power switch is opened, infrared imaging module 1 be about to become infrared image to be transferred to computing machine 2 by usb 1-7, the imaging analysis software of computing machine 2 is realized with the VC programming, can be finished the electronic focusing to infrared imaging module 1, the demonstration of infrared image, the processing of data.By imaging analysis software and USB interface, to infrared imaging module 1 control of focusing, the infrared image of symbol standard is closed in acquisition, can realize that by imaging analysis software the unusual part is appearred in semiconductor light sources (LED) temperature field reports to the police, can generate and preserve the temperature data of required semiconductor light sources each several part, the medial temperature that can demonstrate target and the highest, minimum temperature then.Thereby find out emitting semiconductor product, improve the quality of product with potential faults.

Claims (2)

1, a kind of semiconductor light sources temperature field measuring apparatus, it is characterized in that: this measurement mechanism comprises:
The infrared imaging module is carried out the infrared radiation imaging to the semiconductor light sources target, and processes the image into data and export computing machine to;
Computing machine, the data-interface reception infrared patterns data by the infrared imaging module are transferred to the infrared imaging module with operational order;
Power supply provides required stable working power to the infrared imaging module.
2, semiconductor light sources temperature field measuring apparatus according to claim 1, it is characterized in that: described infrared imaging module comprises infrared lens, electronic focusing module, the sequential driving circuit, the infrared imaging pellet, the A/D change-over circuit, signal processing circuit and data-interface, infrared lens focuses on infrared light on the infrared imaging chip, and be converted to simulating signal, the sequential driving circuit provides to infrared imaging chip and comprises clock signal, reset signal, look-at-me is at interior clock signal, the A/D change-over circuit is converted into digital signal with simulating signal, proofread and correct through signal processing circuit, filtering and enhancing, and export data-interface to.
CNU2009200532370U 2009-03-20 2009-03-20 Device for measuring temperature field of semiconductor light source Expired - Fee Related CN201364201Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2009200532370U CN201364201Y (en) 2009-03-20 2009-03-20 Device for measuring temperature field of semiconductor light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2009200532370U CN201364201Y (en) 2009-03-20 2009-03-20 Device for measuring temperature field of semiconductor light source

Publications (1)

Publication Number Publication Date
CN201364201Y true CN201364201Y (en) 2009-12-16

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CNU2009200532370U Expired - Fee Related CN201364201Y (en) 2009-03-20 2009-03-20 Device for measuring temperature field of semiconductor light source

Country Status (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101936771A (en) * 2010-08-02 2011-01-05 中国科学院长春光学精密机械与物理研究所 Infrared imaging temperature measurement-type energy-flux density measuring device
CN104793072A (en) * 2015-03-28 2015-07-22 合肥天海电气技术有限公司 Electrical equipment fault diagnosis system based on thermal pattern analysis method
CN107255625A (en) * 2017-06-19 2017-10-17 山东大学 One kind is based on Embedded tea-leaf producing area identification device and its application

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101936771A (en) * 2010-08-02 2011-01-05 中国科学院长春光学精密机械与物理研究所 Infrared imaging temperature measurement-type energy-flux density measuring device
CN104793072A (en) * 2015-03-28 2015-07-22 合肥天海电气技术有限公司 Electrical equipment fault diagnosis system based on thermal pattern analysis method
CN107255625A (en) * 2017-06-19 2017-10-17 山东大学 One kind is based on Embedded tea-leaf producing area identification device and its application

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GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091216

Termination date: 20110320