CN201357228Y - Raindrop-shaped high-purity gallium pellet preparation device - Google Patents
Raindrop-shaped high-purity gallium pellet preparation device Download PDFInfo
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- CN201357228Y CN201357228Y CNU2009200369364U CN200920036936U CN201357228Y CN 201357228 Y CN201357228 Y CN 201357228Y CN U2009200369364 U CNU2009200369364 U CN U2009200369364U CN 200920036936 U CN200920036936 U CN 200920036936U CN 201357228 Y CN201357228 Y CN 201357228Y
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- gallium
- high purity
- inner chamber
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- purity gallium
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Abstract
The utility model discloses a raindrop-shaped high-purity gallium pellet preparation device, which comprises a heating and heat preservation zone and a solidification zone, wherein the heating and heat preservation zone comprises a heating and heat preservation device and an internal cavity used for accommodating liquid gallium, and holes are formed at the upper part as well as the bottom part of the internal cavity of the heating and heat preservation zone; the solidification zone comprises a cooling device and an internal cavity opening at the upper part thereof used for accommodating neutral medium. The utility model takes the lead in solving the problem of the high purity gallium pellet preparation; the utility model has the advantages of simple mechanism, convenient operating method and facile specification and quantitative control.
Description
Technical field
The utility model relates to a kind of gallium building mortion, relates in particular to a kind of raindrop shape high purity gallium bead preparation facilities.
Background technology
Molecular beam epitaxy is a key technology of making high quality compound, alloy, layer structure material, semi-conductive development has played conclusive effect for the micro-structural compound, promoted the microelectronics the reach of science, and, shown powerful strength in the birth that expedites the emergence of the nano-electron science.Molecular beam epitaxy needs the gallium of extreme high purity as the gallium source.During actual the use, carry out the high purity gallium grain that molecular beam epitaxy and precision alloy research need the 0.5-1.0 gram.Because the fusing point of gallium is low, only 30 ℃, the degree of supercooling of high purity gallium is big, often will arrive-18 ℃ and just solidify, so the bead that gallium is made 0.5-1.0 gram specification is a difficult problem that perplexs industry always.
The utility model content:
The purpose of this utility model is to overcome above-mentioned deficiency, and a kind of raindrop shape high purity gallium bead preparation facilities is provided.
The technical solution of the utility model is as follows: a kind of raindrop shape high purity gallium bead preparation facilities, comprise heat tracing zone, solidification zone, described heat tracing zone comprises heating and heat-insulating device and is used to place the inner chamber of liquid gallium that described heat tracing zone inner chamber top and bottom are porose; Described solidification zone comprises cooling device and is used to place the uncovered inner chamber of making progress of neutral medium.
The hole on described heat tracing zone inner chamber top is the Compressed Gas air inlet.Described Compressed Gas is a nitrogen.
The hole of described heat tracing zone intracavity bottom is the liquid gallium extrusion.
Described heating and heat-insulating device is around being arranged on described heat tracing zone inner chamber outside.Described heating and heat-insulating device is a heating wire.
Described cooling device is the cooling fluid interlayer that is arranged on described solidification zone inner chamber outside.
The preparation method comprises the steps: that liquid gallium places described heat tracing zone inner chamber; Thermotropism heat preservation zone inner chamber is interrupted the feeding Compressed Gas, and the extruding liquid gallium makes its hole from the hot heat preservation zone intracavity bottom of family be interrupted outflow, becomes gallium and drips; Make gallium splash into the solidification zone inner chamber, and fall into neutral medium.
Described gallium bead quality is 0.5 or 1.0 grams.
Described liquid gallium temperature is 35 ℃-40 ℃.
Described neutral medium temperature is-40 ℃.
Described neutral medium is an ethylene glycol.
The beneficial effect that the utility model compared with prior art has is: the utility model has solved the industry difficult problem of preparation high purity gallium bead first; It is convenient that the utility model equipment mechanism is simple, method is easy to operate, specification is quantitatively controlled.
Description of drawings:
Fig. 1 is the utility model structural representation.
The specific embodiment:
Below in conjunction with the drawings and specific embodiments the utility model is described in detail.
Embodiment 1: as shown in Figure 1, a kind of raindrop shape high purity gallium bead preparation facilities, comprise heat tracing zone 3, solidification zone 10, described heat tracing zone 3 comprises heating and heat-insulating device heating wire 4 and is used to place the inner chamber 2 of liquid gallium 5, described heat tracing zone inner chamber 2 tops and bottom porose 1,6,1 is the compressed nitrogen air inlet, and 6 is liquid gallium 5 extrusions; Described solidification zone 10 comprises cooling device cooling fluid interlayer 8 and is used to place the uncovered inner chamber of making progress of neutral medium ethylene glycol 97.
The preparation method comprises the steps: that liquid gallium 5 places described heat tracing zone inner chamber 2; Thermotropism heat preservation zone inner chamber 2 is interrupted the feeding Compressed Gas, and extruding liquid gallium 5 makes its hole 6 from heat tracing zone inner chamber 2 bottoms be interrupted outflow, becomes gallium and drips; Make gallium splash into solidification zone inner chamber 7, and fall into neutral medium 9.Gallium bead quality is 0.5 gram, and the liquid gallium temperature is 35 ℃, and the neutral medium temperature is-40 ℃.
Embodiment 2: itself and embodiment difference are that gallium bead quality is 1.0 grams, and the liquid gallium temperature is 37 ℃, and the neutral medium temperature is-42 ℃.
Embodiment 2: itself and embodiment difference are that gallium bead quality is 0.8 gram, and the liquid gallium temperature is 40 ℃, and the neutral medium temperature is-45 ℃.
In addition to the implementation, the utility model can also have other embodiments, and all employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop within the protection domain of the utility model requirement.
Claims (7)
1. a raindrop shape high purity gallium bead preparation facilities comprises heat tracing zone, solidification zone, it is characterized in that described heat tracing zone comprises heating and heat-insulating device and the inner chamber that is used to place liquid gallium, and described heat tracing zone inner chamber top and bottom are porose; Described solidification zone comprises cooling device and is used to place the uncovered inner chamber of making progress of neutral medium.
2. a kind of raindrop shape high purity gallium bead preparation facilities according to claim 1 is characterized in that the hole on described heat tracing zone inner chamber top is the Compressed Gas air inlet.
3. a kind of raindrop shape high purity gallium bead preparation facilities according to claim 2 is characterized in that described Compressed Gas is a nitrogen.
4. a kind of raindrop shape high purity gallium bead preparation facilities according to claim 1, the hole that it is characterized in that described heat tracing zone intracavity bottom is the liquid gallium extrusion.
5. a kind of raindrop shape high purity gallium bead preparation facilities according to claim 1 is characterized in that described heating and heat-insulating device is around being arranged on described heat tracing zone inner chamber outside.
6. a kind of raindrop shape high purity gallium bead preparation facilities according to claim 1 is characterized in that described heating and heat-insulating device is a heating wire.
7. a kind of raindrop shape high purity gallium bead preparation facilities according to claim 1 is characterized in that described cooling device is the cooling fluid interlayer that is arranged on described solidification zone inner chamber outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2009200369364U CN201357228Y (en) | 2009-03-02 | 2009-03-02 | Raindrop-shaped high-purity gallium pellet preparation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2009200369364U CN201357228Y (en) | 2009-03-02 | 2009-03-02 | Raindrop-shaped high-purity gallium pellet preparation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201357228Y true CN201357228Y (en) | 2009-12-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2009200369364U Expired - Lifetime CN201357228Y (en) | 2009-03-02 | 2009-03-02 | Raindrop-shaped high-purity gallium pellet preparation device |
Country Status (1)
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| CN (1) | CN201357228Y (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103157799A (en) * | 2011-12-15 | 2013-06-19 | 广东先导稀材股份有限公司 | Preparation method of gallium particles |
| TWI580509B (en) * | 2015-11-13 | 2017-05-01 | Spherical forming device | |
| CN106711052A (en) * | 2015-11-13 | 2017-05-24 | 金鼎冠科技股份有限公司 | Sphere forming device |
| CN111659897A (en) * | 2020-06-23 | 2020-09-15 | 楚雄川至电子材料有限公司 | Production process method of high-purity gallium particles |
| CN113102763A (en) * | 2021-04-12 | 2021-07-13 | 清远先导材料有限公司 | Preparation method of high-purity gallium particles |
-
2009
- 2009-03-02 CN CNU2009200369364U patent/CN201357228Y/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103157799A (en) * | 2011-12-15 | 2013-06-19 | 广东先导稀材股份有限公司 | Preparation method of gallium particles |
| CN103157799B (en) * | 2011-12-15 | 2015-07-29 | 广东先导稀材股份有限公司 | The preparation method of gallium grain |
| TWI580509B (en) * | 2015-11-13 | 2017-05-01 | Spherical forming device | |
| CN106711052A (en) * | 2015-11-13 | 2017-05-24 | 金鼎冠科技股份有限公司 | Sphere forming device |
| CN106711052B (en) * | 2015-11-13 | 2019-05-10 | 金鼎冠科技股份有限公司 | Sphere forming device |
| CN111659897A (en) * | 2020-06-23 | 2020-09-15 | 楚雄川至电子材料有限公司 | Production process method of high-purity gallium particles |
| CN111659897B (en) * | 2020-06-23 | 2021-07-06 | 楚雄川至电子材料有限公司 | Production process method of high-purity gallium particles |
| CN113102763A (en) * | 2021-04-12 | 2021-07-13 | 清远先导材料有限公司 | Preparation method of high-purity gallium particles |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20091209 |
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| CX01 | Expiry of patent term |