CN201345367Y - Battery plate for avoiding generating warm spot - Google Patents
Battery plate for avoiding generating warm spot Download PDFInfo
- Publication number
- CN201345367Y CN201345367Y CNU2008202086115U CN200820208611U CN201345367Y CN 201345367 Y CN201345367 Y CN 201345367Y CN U2008202086115 U CNU2008202086115 U CN U2008202086115U CN 200820208611 U CN200820208611 U CN 200820208611U CN 201345367 Y CN201345367 Y CN 201345367Y
- Authority
- CN
- China
- Prior art keywords
- type
- diffusion layer
- diffused layer
- type diffusion
- type diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model provides a battery plate for avoiding generating a warm spot, which is characterized in comprising a P type substrate. An electrode is arranged on one side of the P type substrate, a back electrode is arranged on the other side of the P type substrate, a first N type diffusion layer is arranged between the P type substrate and the electrode, the end part of the first N type diffusion layer extends to the other side of the P type substrate, a P type diffusion layer is arranged on the edge of the first N type diffusion layer, and a second N type diffusion layer is arranged between the P type diffusion layer and the back electrode; and the back electrode is disconnected with the first N type diffusion layer arranged on the other side of the P type substrate, the P type diffusion layer and the second N type diffusion layer. After a bypass diode is made on the battery plate, the made component can completely eliminate warm spot effect; and therefore, the power generating efficiency of the component is improved, and no additional technology is brought in the operation of the component.
Description
Technical field
The utility model relates to a kind of battery sheet of avoiding hot spot to produce, is used for solar energy converting is become the equipment of electric energy, belongs to battery chip technology field.
Background technology
Present solar module is made up of cover plate, EVA and backboard encapsulation, is made of 36 or 72 series connection usually.Assembly in use since the blocking of building, trees block or blocking of surperficial dirt has shade under many circumstances.This moment, the battery of shaded side will be by other have the energy that solar module produced of illumination as load consumption, and its power conversion is a heat, light the jaundice that causes EVA, and serious meeting causes the short term failure of solar cell.
In order to solve this influence, assembly junction box is inner can install bypass diode, general 24 or bypass diode of 18 chip modules use.But this kind situation can not be avoided hot spot effect fully, when hot spot effect takes place, reverse biased is provided by 23 or 17 chip modules, reverse biased is big, and the heat of generation is big, if surpass the withstand voltage limit of battery sheet in the assembly, then can cause the battery sheet to puncture, also can damage be arranged to the battery sheet even without surpassing the withstand voltage limit, the someone proposes every welding bypass diode, but in practical operation also and be not easy to realize.The battery sheet can think simply and be made up of PN junction and positive and negative electrode that PN junction is generally boron doped substrate diffusion into the surface P and finishes.
The utility model content
The purpose of this utility model provides a kind of battery sheet that can eliminate the assembly hot spot effect fully.
In order to arrive above-mentioned purpose, the technical solution of the utility model has provided a kind of battery sheet of avoiding hot spot to produce, it is characterized in that, comprise P type substrate, side at P type substrate is provided with electrode, opposite side at P type substrate is provided with back electrode, between P type substrate and electrode, be provided with first n type diffused layer, the end of first n type diffused layer extends to the opposite side of P type substrate, edge at first n type diffused layer is provided with p type diffused layer, second n type diffused layer is located between p type diffused layer and the back electrode, back electrode and first n type diffused layer that is positioned at P type substrate opposite side, the p type diffused layer and second n type diffused layer disconnect.
After making bypass diode on the battery sheet that the utility model provides, the assembly that is made can be eliminated hot spot effect fully, improves the assembly generating efficiency, and can not bring additional technology to the operation of assembly.
Description of drawings
A kind of structured flowchart of avoiding the battery sheet of hot spot generation that Fig. 1 provides for the utility model.
Embodiment
Specify the utility model below in conjunction with embodiment.
Embodiment
As shown in Figure 1, for a kind of structured flowchart of avoiding the battery sheet of hot spot generation that the utility model provides, form by electrode 1, first n type diffused layer 2, P type substrate 3, back electrode 4, p type diffused layer 5 and second n type diffused layer 6.
Side at P type substrate 3 is provided with electrode 1, opposite side at P type substrate 3 is provided with back electrode 4, between P type substrate 3 and electrode 1, be provided with first n type diffused layer 2, the end of first n type diffused layer 2 extends to the opposite side of P type substrate 3, be provided with p type diffused layer 5 at the edge of first n type diffused layer 2, second n type diffused layer 6 is located between p type diffused layer 5 and the back electrode 4, and back electrode 4 disconnects with first n type diffused layer 2 that is positioned at P type substrate 3 opposite sides, p type diffused layer 5 and second n type diffused layer 6.
Bypass diode is made up of second n type diffused layer 6 and p type diffused layer 5, and this bypass diode is isolated by first n type diffused layer and P type substrate 3.On electrode 1 and back electrode 4, can weld zinc-plated copper strips, after having welded welding, the back electrode 4 that disconnects can be become continuous state, when battery sheet during in the component internal operate as normal, upper surface is a battery cathode, and lower surface is an anode, electric current flows out from electrode, when the battery sheet was worked under reversed bias voltage, electric current will flow through from the bypass diode of p type diffused layer 5 and second n type diffused layer, 6 compositions, avoids the heating of battery sheet.
Claims (1)
1. battery sheet of avoiding hot spot to produce, it is characterized in that, comprise P type substrate (3), side at P type substrate (3) is provided with electrode (1), opposite side at P type substrate (3) is provided with back electrode (4), between P type substrate (3) and electrode (1), be provided with first n type diffused layer (2), the end of first n type diffused layer (2) extends to the opposite side of P type substrate (3), be provided with p type diffused layer (5) at the edge of first n type diffused layer (2), second n type diffused layer (6) is located between p type diffused layer (5) and the back electrode (4), back electrode (4) and be positioned at first n type diffused layer (2) of P type substrate (3) opposite side, p type diffused layer (5) and second n type diffused layer (6) disconnect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202086115U CN201345367Y (en) | 2008-12-30 | 2008-12-30 | Battery plate for avoiding generating warm spot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202086115U CN201345367Y (en) | 2008-12-30 | 2008-12-30 | Battery plate for avoiding generating warm spot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201345367Y true CN201345367Y (en) | 2009-11-11 |
Family
ID=41276953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008202086115U Expired - Fee Related CN201345367Y (en) | 2008-12-30 | 2008-12-30 | Battery plate for avoiding generating warm spot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201345367Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261662A (en) * | 2015-10-23 | 2016-01-20 | 天津三安光电有限公司 | Solar battery chip having diffused junction bypass diode |
-
2008
- 2008-12-30 CN CNU2008202086115U patent/CN201345367Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261662A (en) * | 2015-10-23 | 2016-01-20 | 天津三安光电有限公司 | Solar battery chip having diffused junction bypass diode |
| CN105261662B (en) * | 2015-10-23 | 2017-07-07 | 天津三安光电有限公司 | A kind of solar cell chip with diffusion junctions bypass diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091111 Termination date: 20121230 |