CN201332107Y

CN201332107Y - Structural improvement of light emitting diode

Info

Publication number: CN201332107Y
Application number: CNU2009200010968U
Authority: CN
Inventors: 吴铭兴; 蔡章富
Original assignee: Individual
Current assignee: Individual
Priority date: 2009-01-16
Filing date: 2009-01-16
Publication date: 2009-10-21
Anticipated expiration: 2019-01-16

Abstract

The utility model relates to a structural improvement of light emitting diode which at least comprises the following components from top to bottom: a P type semiconductor layer, a light emitting layer, an N type semiconductor layer, a transparent substrate, at least one optical film and a heat radiator, wherein the optical film is metal oxide optical film, metal fluoride optical film or metal nitride optical film or the combination of the above optical films. The optical film not only can increase the reflectivity for increasing the luminous efficiency of whole light emitting diode, but also does not reflect the heat source to the upper structural layer. The heat source can be transmitted to the lower heat radiator for smoothly dissipating the heat source and the effect of heat dissipation is effectively obtained.

Description

The light-emitting diode structure improvement

Technical field

The relevant light-emitting diode structure improvement of the utility model aims to provide a kind of reflectivity that improves, and the luminous efficiency of whole light-emitting diode is promoted, and can effectively reach the light-emitting diode structure improvement of radiating effect.

Background technology

Press, first kind of light-emitting diode of commonly using 1 (as shown in Figure 1), it is made of a transparency carrier 11, a n type semiconductor layer 12, a luminescent layer 13 and a p type semiconductor layer 14, and wherein this n type semiconductor layer 12 is laminated on the transparency carrier 11, and this luminescent layer 13 is laminated on the n type semiconductor layer 12, and this p type semiconductor layer 14 is laminated on the luminescent layer 13, and has an electrode respectively on this n type semiconductor layer 12 and the p type semiconductor layer 14, make this electrode be defined as N type electrode 15 and P type electrode 16, constitute a light-emitting diode 1 in this way.

And when this light-emitting diode of commonly using 1 when luminous, some is penetrated this light source by the surface of this n type semiconductor layer 12 and p type semiconductor layer 14, the light source of another part is then penetrated by the surface of transparency carrier 11, and a part of light source only can be penetrated in the surface that makes this n type semiconductor layer 12 and p type semiconductor layer 14, light source as for another part is then penetrated by transparency carrier 11 surfaces, and make this light source form the phenomenon of dissipation, and then cause the luminous efficiency of this light-emitting diode when using to reduce, brightness deterioration, thus can't provide this light-emitting diode when luminous the actual light-source brightness that sends.

Other has second kind of light-emitting diode of commonly using, shown in Fig. 2 A, it is by a heat abstractor 17, reflector 18 (or a metal level), one transparency carrier 11, one n type semiconductor layer 12, one luminescent layer 13 and a p type semiconductor layer 14 constitute, and wherein this n type semiconductor layer 12 is laminated in transparency carrier 11, and this luminescent layer 13 is laminated on the n type semiconductor layer 12, and this p type semiconductor layer 14 is laminated on the luminescent layer 13, and have a N type electrode 15 and a P type electrode 16 on this n type semiconductor layer 12 and the p type semiconductor layer 14 respectively, then be provided with this reflector 18 in transparency carrier 11 bottom surfaces, constitute a light-emitting diode in this way.And by the individual reflection layer 18 of being located at transparency carrier 11 bottom surfaces, make light source P1 can reflect a part of light source P2 again when seeing through transparency carrier 11, though yet it can reduce the light source dissipation of light-emitting diode, promote the brightness of this light-emitting diode on using, but actual light source dissipation is still quite serious, so to still limited in the lifting of overall brightness; And the structure in this reflector 18 mostly is metallic film greatly, for example aluminium film or silver-colored film etc., because the tack that the reflector 18 of this metallic film material and transparency carrier are 11 is relatively poor, so must utilize layer of silicon dioxide layer 181 in addition again in this

reflector

18 and 11 of transparency carriers, shown in Fig. 2 B, make this reflector 18 can stick together fixing mutually by this silicon dioxide layer 181 with transparency carrier 11; Only, the reflectivity that can make reflector 18 that is provided with of this silicon dioxide layer 181 descends, and the not high heat abstractor 17 that thermal source can't be conducted to the below of the coefficient of heat conduction of this silicon dioxide layer 181, and but this metallic film is except that reflection source, also can simultaneously heat source H 1 be reflexed to the top structure sheaf, can make the heat source H 2 after the reflection concentrate on luminescent layer 13 on the contrary, make its temperature rising decrease in efficiency.

And the light emitting diode construction that the third habit has, as shown in Figure 3, as TaiWan, China patent announcement number M244587 number, patent name " light-emitting diode of tool compound catoptric arrangement ", it is from the bottom to top by folded reflector 18 of establishing, one transparency carrier 11, one n type semiconductor layer 12, one luminescent layer 13 and a p type semiconductor layer 14 constitute, wherein, each reflector 18 is distributed Bragg reflector (Distributed Bragg Reflector, DBR), use and form a catoptric arrangement, can in order to provide light-emitting diode when sending light source, reflect the light source of injecting with various angles respectively by above-mentioned structure by each reflector 18, and reach the light source dissipation that reduces light-emitting diode, promote the brightness of this light-emitting diode on using; Yet, use the selection and the structure Design of the material in this distributed Bragg reflector (to call DBR in the following text) to bother very much, for instance: if wish to obtain being applicable to the DBR of 570nm green-yellow light light-emitting diode, two kinds of materials of at first essential decision formation DBR why, because the light of active layer emission is 570nm, therefore when selecting the DBR material, will consider lattice match, and both energy gaps are all greater than 2.175eV person, otherwise DBR can absorb the 570nm laser light of luminescent layer emission; In addition, by reflection law as can be known, when the refractive index of two kinds of materials differs big more, the reflecting effect of interface is good more, thus also to consider the refractive index of two kinds of materials, so in response to the light source of different wave length, the DBR that uses also must have different materials to select, and also causes the difficulty on the processing procedure.

The utility model content

In view of this, the technical problem that the utility model solved is promptly improved at light-emitting diode, and a kind of reflectivity that improves is provided especially, the luminous efficiency of whole light-emitting diode is promoted, and can effectively reach the structural improvement of radiating effect.

Take off purpose on reaching, light emitting diode construction of the present utility model is formed and is from top to bottom included at least: a p type semiconductor layer, one luminescent layer, one n type semiconductor layer, one transparency carrier, an at least one blooming and a heat abstractor, wherein, this blooming is the metal oxide blooming, metal fluoride blooming or metal nitride blooming or its combination, this blooming not only can improve reflectivity, the luminous efficiency of whole light-emitting diode is promoted, and thermal source can not reflexed to the structure sheaf of top, and the heat abstractor below thermal source can being sent to, smoothly thermal source is left, effectively reach the effect of heat radiation.

The beneficial effects of the utility model are:

1, utilizes metal oxide blooming of the present utility model, metal fluoride blooming or metal nitride blooming, can promote the reflectivity of light source, can significantly reduce the phenomenon of LED source dissipation, the luminous efficiency of whole light-emitting diode is promoted.

2, the thermal source of light-emitting diode can not reflexed to the structure sheaf of top, and thermal source can be sent to the heat abstractor of this blooming below,, effectively reach the effect of heat radiation smoothly thermal source is left.

3, the reflexible optical source wavelength scope of blooming of the present utility model is wider, and can utilize the thickness size of adjusting this blooming, to be applicable to the light source of different wave length.

Description of drawings

Fig. 1 is that first kind of habit has the light-emitting diode structure schematic diagram;

Fig. 2 A, B are that second kind of habit has the light-emitting diode structure schematic diagram;

Fig. 3 has the light-emitting diode structure schematic diagram for the third habit;

Fig. 4 is the structural representation of light-emitting diode first embodiment in the utility model;

Fig. 5 is the structural representation of light-emitting diode second embodiment in the utility model.

[figure number explanation]

Light-emitting diode 1 transparency carrier 11

N type semiconductor layer 12 luminescent layers 13

P type semiconductor layer 14 N type electrodes 15

P type electrode 16 heat abstractors 17

Reflector 18 silicon dioxide layers 181

Reflector 19 light-emitting diodes 2

Transparency carrier 21 n type semiconductor layers 22

N type electrode 221 bloomings 23

Heat abstractor 24 bonding coats 241

Luminescent layer 26 p type semiconductor layers 27

P type electrode 271

Embodiment

Characteristics of the present utility model can be consulted the detailed description of the graphic and embodiment of this case and obtained to be well understood to.

Light-emitting diode structure improvement of the present utility model, shown in first embodiment of Fig. 4, this light-emitting diode 2 includes at least:

One transparency carrier 21, this transparency carrier 21 is provided with a n type semiconductor layer 22, and these transparency carrier 21 bottom sides are provided with a blooming 23, and this transparency carrier 21 can be sapphire (SAPPHIRE) transparency carrier;

One blooming 23, be located at this transparency carrier 21 bottom sides, this blooming 23 is the metal oxide blooming, metal fluoride blooming or metal nitride blooming, wherein, this metal oxide blooming can be the aluminium oxide blooming, titanium oxide optics film, the zirconia blooming, silica blooming or tantalum oxide blooming, and this metal fluoride blooming can be the magnesium fluoride blooming, this metal nitride blooming can be the silicon nitride blooming in addition, and these bloomings have tackness and reach the strong advantage of reflectivity by force, and partly especially ultrared penetrability is higher at invisible light;

One heat abstractor 24, this heat abstractor 24 are located at this blooming 23 bottom sides, and 24 of this blooming 23 and heat abstractors can be provided with bonding coat 241 (can be heat-conducting glue);

One n type semiconductor layer 22 is located on this transparency carrier 21, and these n type semiconductor layer 22 surfaces are provided with N type electrode 221;

One luminescent layer 26 is located on this n type semiconductor layer 22;

One p type semiconductor layer 27 is located on this luminescent layer 26, and these p type semiconductor layer 27 surfaces are provided with P type electrode 271.

When optical diode of the present utility model sends light source by luminescent layer 26, this a part of light source P3 is penetrated by the surface of this p type semiconductor layer 27, the light source P4 of another part is then penetrated into the bottom surface of this transparency carrier 21 by the surface of transparency carrier 21, at this moment, this light source that penetrates into transparency carrier 21 bottom surfaces promptly exposes to the surface of blooming 23, the light source that exposes to blooming 23 surfaces evenly can be reflected, and make after this reflection light source P5 earlier by the bottom surface of this transparency carrier 21 penetrated this substrate 2 the surface after see through again this n type semiconductor layer 22 and p type semiconductor layer 27 the bottom surface and by penetrating on the surface of this n type semiconductor layer 22 and p type semiconductor layer 27, so, can significantly reduce the phenomenon of LED source dissipation, the luminous efficiency of whole light-emitting diode is promoted; In addition, this blooming 23 all penetrates ultrared thermal radiation, and this thermal source can not reflex to the structure sheaf of top, and this blooming 23 can be selected its coefficient of heat conduction more than or equal to transparency carrier 21, and heat source H 2 can be sent to the heat abstractor 24 of these blooming 23 belows, smoothly thermal source is left, effectively reach the effect of heat radiation.

The blooming 23 of this light-emitting diode 2 also can be folded and be provided with plural layer, shown in second embodiment of Fig. 5, this blooming 23 is the metal oxide blooming, metal fluoride blooming or metal nitride blooming or its combination, to reflect the light source of injecting by various angles respectively by each blooming 23, and then significantly reduce the light source dissipation of light-emitting diode, promote the brightness of this light-emitting diode integral body, and this blooming 23 can be complied with the required different compound (metal oxide that is respectively, metal fluoride or metal nitride) material made, and the thickness of each blooming 23 also can be arranged in pairs or groups and adjust to be provided with, and makes light-emitting diodes of the present utility model be in control better reflection efficiency and demand that more can realistic behaviour in service; And the light of visual institute desire reflection different wave length, calculate the thickness of corresponding blooming, certainly this thickness can be for the gross thickness of thickness or each blooming of single blooming, so by the thickness of adjusting the utility model blooming, can obtain the high-reflection region territory of different wave length and wide wave zone.

It is worth mentioning that the utility model has compared to habit and has following advantages:

1, utilizes metal oxide blooming of the present utility model, metal fluoride blooming or metal The nitride blooming can promote the reflectivity of light source, can significantly reduce LED source dissipation Phenomenon, the luminous efficiency of Integral luminous diode is promoted.

2, the thermal source of light emitting diode can not reflexed to the structure sheaf of top, and thermal source can be transmitted Heat abstractor to this blooming below smoothly thermal source is left, effectively reaches the effect of heat radiation.

3, the reflexible optical source wavelength scope of blooming of the present utility model is wider, and can utilize adjustment The thickness size of this blooming is to be applicable to the different wave length source.

Indulge the above, the utility model provides another better feasible light emitting diode construction improvement, The application of new patent is offered in the whence in accordance with the law; Moreover, technology contents of the present utility model and technical characterstic Disclose as above, however the personage who is familiar with this technology still may be based on announcement of the present utility model and Do various replacement and the modifications that do not deviate from this case utility model spirit. Therefore, guarantor of the present utility model The scope of protecting should be not limited to those disclosed embodiments, and should comprise various of the present utility model the replacing of not deviating from Change and modify, and contained by following claim.

Claims

1, a kind of light-emitting diode structure improvement is characterized in that it includes at least:

One transparency carrier, this transparency carrier is provided with a n type semiconductor layer, and this transparency carrier bottom side is provided with a blooming;

Blooming is located at this transparency carrier bottom side, and this blooming is metal oxide blooming, metal fluoride blooming or metal nitride blooming or its combination;

One n type semiconductor layer is located on this transparency carrier;

One luminescent layer is located on this n type semiconductor layer;

One p type semiconductor layer is located on this luminescent layer.

2, light-emitting diode structure improvement as claimed in claim 1 is characterized in that this transparency carrier is the sapphire transparent substrate.

3, light-emitting diode structure improvement as claimed in claim 1 is characterized in that this metal oxide blooming is titanium oxide optics film, zirconia blooming, silica blooming or tantalum oxide blooming.

4, light-emitting diode structure improvement as claimed in claim 1 is characterized in that this metal fluoride blooming is the magnesium fluoride blooming.

5, light-emitting diode structure improvement as claimed in claim 1 is characterized in that this metal nitride blooming is the silicon nitride blooming.

6, light-emitting diode structure improvement as claimed in claim 1 is characterized in that this n type semiconductor layer and P type semiconductor laminar surface are provided with electrode.

7, light-emitting diode structure as claimed in claim 1 improvement is characterized in that, the thickness adjustment of this blooming can obtain the high-reflection region territory of different wavelength range.

8, light-emitting diode structure improvement as claimed in claim 1 is characterized in that this light-emitting diode further is provided with heat abstractor, and this heat abstractor is located at this blooming bottom side.

9, light-emitting diode structure improvement as claimed in claim 8 is characterized in that, is provided with bonding coat between this blooming and heat abstractor.

10, light-emitting diode structure improvement as claimed in claim 9 is characterized in that this bonding coat is a heat-conducting glue.