CN201324702Y - Device for spraying silicon nitride coating on inner wall of quartz crucible under low pressure - Google Patents
Device for spraying silicon nitride coating on inner wall of quartz crucible under low pressure Download PDFInfo
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- CN201324702Y CN201324702Y CNU2008202150997U CN200820215099U CN201324702Y CN 201324702 Y CN201324702 Y CN 201324702Y CN U2008202150997 U CNU2008202150997 U CN U2008202150997U CN 200820215099 U CN200820215099 U CN 200820215099U CN 201324702 Y CN201324702 Y CN 201324702Y
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- silicon nitride
- low pressure
- pressure vessel
- quartz crucible
- spraying
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Abstract
The utility model relates to a device for spraying silicon nitride coating on the inner wall of a quartz crucible under low pressure, which comprises the quartz crucible (1), an atomizing head (2), a vacuum pump (3), a vacuum meter (4), a low pressure vessel (5), a valve (6), an agitator (8) and a silicon nitride slurry vessel (9); wherein the low pressure vessel (5) is connected with the vacuum pump (3), the vacuum meter (4) is arranged on the low pressure vessel (5) and controls the pressure in the low pressure vessel (5) to be within 10 to 100Pa, the quartz crucible (1) is arranged in the airtight low pressure vessel (5), the atomizing head (2) is arranged in the quartz crucible (1), the atomizing head (2) is connected with the silicon nitride slurry vessel (9) by a pipeline (7), a valve (6) is arranged on the pipeline (7), and the agitator (8) is arranged in the silicon nitride slurry vessel (9). The device can prepare silicon nitride layers with uniform thickness, less pollution and compact structure, and can reduce environmental pollution as well as harm to health of operators.
Description
(1) technical field
The utility model relate to a kind of on the inner wall of quartz crucible that is used for the casting polycrystalline silicon ingot device of spraying silicon nitride coating.
(2) background technology
The polycrystalline ingot casting is earlier the silicon material to be put in the silica crucible, and electricity consumption is heated to the silicon in the silica crucible more than the silicon fusing point then, after insulation a period of time, begins to cool down to head from the silica crucible bottom and to solidify, and has promptly formed polycrystal silicon ingot at last.If the inwall of silica crucible does not have coating, can take place after the molten silicon cooled and solidified and silica crucible sticks together, cause silica crucible to reuse.If on the inwall of silica crucible, be coated with the recycling that the last layer silicon nitride can be realized silica crucible, reduce production costs.
At present spraying silicon nitride coating on the used inner wall of quartz crucible of polycrystalline ingot casting is in normal pressure (atmospheric pressure) spraying down.The normal pressure spraying has following shortcoming: silicon nitride is vulnerable to pollute; Silicon nitride coating is in uneven thickness; Silicon nitride coating is fine and close inadequately; Easy contaminated environment and harm operating personnel health in the spraying operation process.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provide a kind of can prepare thickness evenly, pollute silicon nitride layer little, compact structure, and can reduce environmental pollution and reduce under the low pressure of operating personnel's health hazard on inner wall of quartz crucible the device of spraying silicon nitride coating.
The purpose of this utility model is achieved in that under a kind of low pressure the device of spraying silicon nitride coating on inner wall of quartz crucible, comprise silica crucible, atomising head, vavuum pump, vacuum meter, low pressure vessel, valve, agitator and Sheng silicon nitride slurry container, described low pressure vessel links to each other with vavuum pump, vacuum meter is installed on the low pressure vessel, pressure in the control low pressure vessel is 10-100Pa, described silica crucible places in the airtight low pressure vessel, atomising head is arranged in the silica crucible, atomising head links to each other with Sheng silicon nitride slurry container by pipeline, pipeline is provided with valve, contains in the silicon nitride slurry container and is provided with agitator.
Its spraying method is as follows: silicon nitride particle (5~200 microns of particle diameters) and pure water are stirred into Mag solution and remain on constantly stirring in the spraying process, this solution forms the silicon nitride mist through atomising head under the inside and outside differential pressure effect, (10~100Pa) times evenly continuous spraying on the inner wall of quartz crucible of this mist, moisture content is promptly formed dry silicon nitride (1~2mm) thin layer after drying in low pressure.This coating also need be carried out sintering under 1000 ℃ before being used for the casting polycrystalline silicon ingot, forms the fine and close more silicon nitride layer of structure.
Pressure is lower in the process of the utility model device spraying silicon nitride, has only the one thousandth of normal pressure spraying method.Low pressure has higher cleanliness factor in the container mutually with normal pressure, and the silicon nitride of spraying can be clean more, can reduce the pollution to the polycrystalline ingot casting.
The following table data are selected from 49 pages of GB 50073-2001 versions
Atmosphere dust content mean value is (more than or equal to 0.5m, pc/L)
The area | Annual | The monthly average maximum | The monthly average minimum of a value |
Beijing (urban district) | 190956 | 293481 | 9274 |
Beijing (rural area, Changping) | 35643 | 156620 | 4591 |
Shanghai (urban district) | 128052 | 365103 | 34327 |
Xi'an (urban district) | 131644 | 317561 | 29738 |
The air a large amount of dust is arranged as can be seen from last table data, vacuum coating, the pressure when supposing plated film is 100Pa, normal pressure is 1.01 * 10
5Pa is according to the imperial equation PV=nRT estimation of carat uncle, 1/1000 the when molal quantity of gas becomes normal pressure, can estimate that airborne dust particle also is kept to original 1/1000 approximately, therefore cleanliness factor improves greatly, has reduced the pollution of air to silicon nitride, thereby reduces the pollution to the polycrystalline ingot casting.
Under the low pressure, the vaporific particle of silicon nitride has longer mean free path, and what promptly combine between silicon nitride particle and silica crucible and silicon nitride particle is tightr.According to formula
Wherein λ is a molecule mean free path, and π is a constant, and d is that the molecule effective diameter is considered as definite value, and n is the number density of molecule; In conjunction with carat imperial equation PV=nRT of uncle, V is that the plated film volume of a container is a certain value, and R is a perfect gas state constant, and T also is constant under certain conditions, so n is directly proportional low pressure (10-100Pa) and normal pressure (1.01 * 10 with P
5Pa) compare, molecule mean free path can be increased to original 1000 times, so silicon nitride particle has when arriving silica crucible surperficial bigger actively, makes that silicon nitride film compactness is better.
Vavuum pump is worked under manometric monitoring, keep the work under the less pressure reduction that is sprayed at, the inside and outside differential pressure fluctuation is little to make that the initial kinetic energy fluctuation of silicon nitride spraying is little, and therefore silicon nitride atomizing high conformity makes that the silicon nitride coating that sprays on the inner wall of quartz crucible is more even.
The low pressure spraying operation is operation in airtight space, has avoided the diffusion of silicon nitride mist outside confined space, has reduced to the harmful effect of environment and to operative employee's harm.
To sum up, the utility model device has following characteristics:
1, environment is cleaner under the low pressure, and the pollution that the silicon nitride of spraying is subjected to still less;
2, the vaporific grain structure of silicon nitride is finer and close; Silicon nitride coating is more even;
3, can reduce operation process to the pollution of environment and to operator's harm.
(4) description of drawings
Fig. 1 be under the utility model low pressure on inner wall of quartz crucible the apparatus structure schematic diagram of spraying silicon nitride coating.
Among the figure: silica crucible 1, atomising head 2, vavuum pump 3, vacuum meter 4, low pressure vessel 5, valve 6, pipeline 7, agitator 8, Sheng silicon nitride slurry container 9.
(5) specific embodiment
Referring to Fig. 1, under the related low pressure of the utility model on inner wall of quartz crucible the device of spraying silicon nitride coating, mainly by silica crucible 1, atomising head 2, vavuum pump 3, vacuum meter 4, low pressure vessel 5, valve 6, agitator 8 with contain silicon nitride slurry container 9 and form.Described low pressure vessel 5 links to each other with vavuum pump 3, vacuum meter 4 is installed on the low pressure vessel 5, pressure in the control low pressure vessel 5 is 10-100Pa, described silica crucible 1 places in the airtight low pressure vessel 5, atomising head 2 is arranged in the silica crucible 1, atomising head 2 links to each other with Sheng silicon nitride slurry container 9 by pipeline 7, and pipeline 7 is provided with valve 6, contains in the silicon nitride slurry container 9 and is provided with agitator 8.
Claims (1)
1, under a kind of low pressure on inner wall of quartz crucible the device of spraying silicon nitride coating, it is characterized in that: described device comprises silica crucible (1), atomising head (2), vavuum pump (3), vacuum meter (4), low pressure vessel (5), valve (6), agitator (8) and Sheng silicon nitride slurry container (9), described low pressure vessel (5) links to each other with vavuum pump (3), low pressure vessel (5) is gone up vacuum meter (4) is installed, pressure in the control low pressure vessel (5) is 10-100Pa, described silica crucible (1) places in the airtight low pressure vessel (5), atomising head (2) is arranged in the silica crucible (1), atomising head (2) links to each other with Sheng silicon nitride slurry container (9) by pipeline (7), pipeline (7) is provided with valve (6), contains in the silicon nitride slurry container (9) and is provided with agitator (8).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU2008202150997U CN201324702Y (en) | 2008-12-05 | 2008-12-05 | Device for spraying silicon nitride coating on inner wall of quartz crucible under low pressure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNU2008202150997U CN201324702Y (en) | 2008-12-05 | 2008-12-05 | Device for spraying silicon nitride coating on inner wall of quartz crucible under low pressure |
Publications (1)
Publication Number | Publication Date |
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CN201324702Y true CN201324702Y (en) | 2009-10-14 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNU2008202150997U Expired - Lifetime CN201324702Y (en) | 2008-12-05 | 2008-12-05 | Device for spraying silicon nitride coating on inner wall of quartz crucible under low pressure |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101797544A (en) * | 2010-03-19 | 2010-08-11 | 常熟华融太阳能新型材料有限公司 | Automatic spraying device and automatic spraying process for solar energy quartz crucible |
CN101433890B (en) * | 2008-12-05 | 2010-12-29 | 江阴海润太阳能电力有限公司 | Method and device for spraying silicon nitride coating on inner wall of quartz crucible under low pressure |
-
2008
- 2008-12-05 CN CNU2008202150997U patent/CN201324702Y/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101433890B (en) * | 2008-12-05 | 2010-12-29 | 江阴海润太阳能电力有限公司 | Method and device for spraying silicon nitride coating on inner wall of quartz crucible under low pressure |
CN101797544A (en) * | 2010-03-19 | 2010-08-11 | 常熟华融太阳能新型材料有限公司 | Automatic spraying device and automatic spraying process for solar energy quartz crucible |
CN101797544B (en) * | 2010-03-19 | 2012-05-30 | 常熟华融太阳能新型材料有限公司 | Automatic spraying device and automatic spraying process for solar energy quartz crucible |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
AV01 | Patent right actively abandoned |
Granted publication date: 20091014 Effective date of abandoning: 20081205 |