CN201323201Y - Crystalline silicon solar battery - Google Patents
Crystalline silicon solar battery Download PDFInfo
- Publication number
- CN201323201Y CN201323201Y CNU2008201693303U CN200820169330U CN201323201Y CN 201323201 Y CN201323201 Y CN 201323201Y CN U2008201693303 U CNU2008201693303 U CN U2008201693303U CN 200820169330 U CN200820169330 U CN 200820169330U CN 201323201 Y CN201323201 Y CN 201323201Y
- Authority
- CN
- China
- Prior art keywords
- silicon
- solar cell
- crystal
- amorphous silicon
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Disclosed is a crystalline silicon solar battery, which comprises a silicon nitride film layer (2) and an amorphous silicon film layer (3) with different refractivity and thickness, wherein one surface of the amorphous silicon film layer (3) clings to an illuminated surface (1) of the solar battery, and the other surface of the amorphous silicon film layer (3) clings to the surface of the silicon nitride film layer (2). The crystalline silicon solar battery can further reduce reflectivity to increase photoelectric conversion efficiency.
Description
Technical field
The utility model relates to a kind of crystal-silicon solar cell.
Background technology
At present, two key issues of restriction solar cell extensive use are: 1, photoelectric conversion efficiency; 2, cost.Crystal-silicon solar cell is low because of its cost, be convenient to advantages such as large-scale production generally is subject to people's attention and is developed rapidly.The prior art of crystal-silicon solar cell is by reducing light reflectivity on the solar panel at crystal-silicon solar cell surface deposition one deck silicon nitride attenuate film to improve the photoelectric conversion efficiency of crystal-silicon solar cell, common practices is to adopt the PECVD technology to deposit one deck antireflection film on the sensitive surface of crystal-silicon solar cell, be silicon nitride film, thereby reach the purpose that improves photoelectric conversion efficiency.Though this structure has reduced the light reflectivity of crystal-silicon solar cell to a certain extent, the light reflectivity of the crystal-silicon solar cell that prior art is produced is unfavorable for the raising of photoelectric conversion efficiency still than higher.
The utility model content
The technical problems to be solved in the utility model is to provide a kind of further reduction light reflectivity to improve the crystal-silicon solar cell of photoelectric conversion efficiency.
The technical solution of the utility model is, a kind of crystal-silicon solar cell is provided, it comprises one deck silicon nitride film, it also comprises one deck different refractivity, different-thickness amorphous silicon membrane, fitting with the sensitive surface of solar cell in one surface of described amorphous silicon membrane layer, fits with the surface of described silicon nitride film layer in another surface of described amorphous silicon membrane layer.
After adopting above structure, the utility model compared with prior art has the following advantages:
On existing silicon nitride film layer basis, fit the again crystal silicon thin film of one deck different refractivity, different-thickness of the utility model crystal-silicon solar cell, can further reduce the reflectivity on the solar cell sensitive surface, thereby further improve the photoelectric conversion efficiency of crystal-silicon solar cell.
Description of drawings
Accompanying drawing is a structure chart of the present utility model.
Shown in the figure 1, sensitive surface, 2, silicon nitride film layer, 3, the amorphous silicon membrane layer.
Embodiment
The utility model is described in further detail below in conjunction with the drawings and specific embodiments.
As shown in the figure, the utility model is a kind of crystal-silicon solar cell, and it comprises one deck silicon nitride (SiN
x) film 2, it also comprises one deck different refractivity, different-thickness amorphous silicon (a-Si) film 3, fit with the sensitive surface 1 of solar cell in one surface of described amorphous silicon (a-Si) thin layer 3, another surface and described silicon nitride (SiN of described amorphous silicon (a-Si) thin layer 3
x) surface of thin layer 2 fits.
The utility model adopts PECVD to send out at the front of crystal-silicon solar cell deposition one deck amorphous silicon (a-Si)/silicon nitride (SiN
x) double-deck antireflective coating.
Can get according to the interference of light principle, the anti-reflective effect of individual layer antireflective coating is limited, therefore needs double layer antireflection coating or double-layer reflection reducing coating further to reduce reflection.Reflectivity at the semiconductor surface of reality is relevant with the incident light wavelength, is generally 30～50%.For preventing the reflection on surface, prepare the transparent thin film layer of refractive index between semiconductor and air refraction at semiconductor surface.This thin layer is called antireflective coating.
If the refractive index of semiconductor, antireflective coating, air is respectively n
2, n
1, n
0, antireflective coating thickness is d
1, λ is a wavelength, then the formula that satisfies as required:
r
1＝(n
0-n
1)/(n
0+n
1)
r
2＝(n
1-n
2)/(n
1+n
2)
θ＝2πn
1d
1/λ
Obviously, the thickness d of antireflective coating
1When being 1/4 wavelength, R is minimum.
Therefore, draw according to top formula, the refractive index of described amorphous silicon (a-Si) film is 2.2～3.2, and the thickness of described amorphous silicon (a-Si) thin layer 3 is 45～70nm; Described silicon nitride (SiN
x) refractive index of film is 1.2～2, described silicon nitride (SiN
x) thickness of thin layer 2 is 75～125nm.
In addition, show according to test data: crystal-silicon solar cell is adopting individual layer silicon nitride (SiN
x) film is during as antireflection film, the crystal-silicon solar cell current density is 33.5mA/cm2, and adopts amorphous silicon (a-Si)/silicon nitride (SiN
x) bilayer film is during as antireflection film, the crystal silicon cell current density is 34.8mA/cm2, short-circuit current density improves 3.8%.Therefore, can draw amorphous silicon (a-Si)/silicon nitride (SiN that the utility model uses
x) bilayer film is with respect to individual layer silicon nitride (SiN
x) film, its reflectivity reduces, and photoelectric conversion efficiency has had raising definitely.
Claims (3)
1, a kind of crystal-silicon solar cell, it comprises one deck silicon nitride film (2), it is characterized in that: it also comprises the amorphous silicon membrane (3) of one deck different refractivity, different-thickness, fitting with the sensitive surface (1) of solar cell in one surface of described amorphous silicon membrane layer (3), fits with the surface of described silicon nitride film layer (2) in another surface of described amorphous silicon membrane layer (3).
2, crystal-silicon solar cell according to claim 1 is characterized in that: the refractive index of described amorphous silicon membrane is 2.2～3.2, and the thickness of described amorphous silicon membrane layer is 45～70nm.
3, crystal-silicon solar cell according to claim 1 is characterized in that: the refractive index of described silicon nitride film is 1.2～2, and the thickness of described silicon nitride film layer is 75～125nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201693303U CN201323201Y (en) | 2008-11-29 | 2008-11-29 | Crystalline silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201693303U CN201323201Y (en) | 2008-11-29 | 2008-11-29 | Crystalline silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201323201Y true CN201323201Y (en) | 2009-10-07 |
Family
ID=41160576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201693303U Expired - Lifetime CN201323201Y (en) | 2008-11-29 | 2008-11-29 | Crystalline silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201323201Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312530A (en) * | 2010-07-07 | 2012-01-11 | 鸿富锦精密工业（深圳）有限公司 | Integrated solar energy tile and manufacturing method thereof |
-
2008
- 2008-11-29 CN CNU2008201693303U patent/CN201323201Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312530A (en) * | 2010-07-07 | 2012-01-11 | 鸿富锦精密工业（深圳）有限公司 | Integrated solar energy tile and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20091007 |
|
| CX01 | Expiry of patent term |