CN201301337Y - Cathode structure of vacuum sputtering machine - Google Patents
Cathode structure of vacuum sputtering machine Download PDFInfo
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- CN201301337Y CN201301337Y CNU2008201358860U CN200820135886U CN201301337Y CN 201301337 Y CN201301337 Y CN 201301337Y CN U2008201358860 U CNU2008201358860 U CN U2008201358860U CN 200820135886 U CN200820135886 U CN 200820135886U CN 201301337 Y CN201301337 Y CN 201301337Y
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Abstract
The utility model relates to a cathode structure of a vacuum sputtering machine, comprising an auxiliary magnetic field generating device which is mechanically connected with a machine frame of the vacuum sputtering machine and can generate auxiliary magnetic field; a target which is connected with an electric field cathode and is provided with an inner side surface and an outer side surface; the inner side surface is toward to the auxiliary magnetic field generating device, and the outer side surface is toward to bombardment charged particles of the vacuum sputtering machine; and an interference magnetic piece which is arranged between the target and the auxiliary magnetic field generating device. The cathode structure has the beneficial effects that: the service life of the target can be increased by 50 percent to 200 percent under the same sputtering condition, and the cathode structure has large effect on reducing the cost; besides increasing the service life of the target and reducing the cost, the product quality and utilization ratio are greatly improved, and the output value can be increased by 15 percent again.
Description
Technical field
The utility model relates to a kind of cathode structure of vacuum splashing and plating machine.
Background technology
As the semi-conductor industry cognitive, meteorology deposition apparatus and electricity slurry depositing system equipment be this year the manufacturings manufacturer of specific electronic equipment set actively research and develop and the project of construction, especially applicable to the physics meteorology deposition apparatus of various size wafer, important technology field that it comprised such as vacuum sputtering apparatus field, the exploitation of board isolated plant and control software integration system or the like, comprised the multiple technologies field, and wherein the research and development of board isolated plant can be described as and are related to the quite important factor of total system success or failure, only the field because of the board isolated plant involves each professional domain industry, must be understood each professional technique: as the even target consumption technology of not having the dead angle on a large scale that is starved of on the vacuum splashing and plating field, then can improve the not shortcoming of length of target life if use on the cathode structure of vacuum splashing and plating machine, the film cost that reaction is generated reduces; In addition, the improvement of existing vacuum splashing and plating board is also extremely important, and the mode of its design also is the emphasis of each tame manufacturer researchdevelopment.
In this summary vapor phase deposition kind, at first whether thin film deposition contains the mechanism of chemical reaction according in the deposition process, can divide into that physics vapor phase deposition (PVD) is commonly referred to physical vapor deposition and chemical meteorology deposition (CVD) is commonly referred to chemical vapor deposition.Along with deposition technique and deposition parameter difference, the structure of institute's deposit film may be monocrystalline, polycrystalline or non-crystalline structure.In existing wafer bearing device, cathode structure can be used as reference, as shown in Figures 1 and 2, wherein target 1 bears the charged particle bombardment of outer side 15 to produce the electricity slurry, to be used for vapor phase deposition, this target ties up to medial surface 17 and is fixed on binding bearing metal plate 13 or the auxiliary magnetic field generation device 2 (containing cathode electric field) with indium binding structure 11, wherein auxiliary magnetic field generation device 2 is positioned on the support 22 (containing the anode electric field), wherein auxiliary magnetic field generation device 2 inside have magnetic pole 21 and can produce auxiliary magnetic field and carry out with auxiliary sputter, yet the prior art only provides the most basic sputter function, consumption to target 1 is the V-arrangement corrosion area, if will strengthen using target 1 so that the electricity slurry that unit volume produces increases.With prior art, then must set up mobile module (figure does not show) on auxiliary magnetic field generation device 2, so that target produces U-shaped corrosion area consumption patterns, it is high and can't be applicable to all sputtering machine tables that yet mobile module can take very big space and cost, being unfavorable for practice, should be important research and development target to improve the sputtering machine table function there's no one who doesn't or isn't with the research and development manufacturer in field therefore.
Sketch the sputter principle at this: the electricity slurry is a kind of gas that suffers partial ionization.By on two corresponding metal electrode boards, imposing voltage, if the gas molecule concentration between battery lead plate is in a certain specific interval, electrode plate surface is because of secondary electron that ion bombardment produced, under the electric field that battery lead plate provided, enough energy will be obtained, and and the gas molecule between battery lead plate carry out so-called " dissociating " because of bump, " ionization ", and reactions such as " exciting ", and produce ion, atom, atomic group and more electronics, to keep each interionic concentration balance in the electricity slurry.When the negative electrode electroplax of a DC electricity slurry suffers ionic bombardment, the positively charged ion of disengaging will obtain high energy under the electric field of dark space quickens.After ion and negative electrode generation bombardment, principle based on the momentum conversion, ion bombardment is except meeting produces secondary electron, also can come out for " strike " atom of electrode plate surface, this moves, and we are referred to as " sputter " these are swashed the battery lead plate atom that and will enter in the electricity slurry, then, be delivered to the surface of plated body and thereby deposition at last with kinetic energy that it was obtained, the mode of breaking etc.This ion bombardment that utilizes electricity slurry uniqueness, principle with the momentum conversion, the preparation deposition of elements is so that carry out the PVD technology of thin film deposition in gas phase, be referred to as " sputter " based on above model, the deposition mechanism of sputter can be divided into following step haply: the part ion that is produced in (1) electricity slurry will break away from the electricity slurry and move toward negative plate.(2) ion through quickening will bang the surface of hitting at the negative electricity pole plate except that producing secondary electron, also therefore hit the battery lead plate atom.(3) the battery lead plate atom that is hit will enter in the electricity slurry and spread out of at last and give another to be placed with the electrode surface of plated body (as wafer, glass etc.).(4) these adatoms that are attracted to plated body (as wafer, glass) surface will carry out depositing of thin film.
Cooperate negative electrode to produce the lower cost electricity slurry of target 1 by above existing vacuum sputtering apparatus and existing mobile die set, we can find under the condition of its structure, must develop still that can widely used cathode structure, to meet the application that low-cost electric pulp material deposition produces film.
The utility model content
The purpose of this utility model is to provide a kind of cathode structure of vacuum splashing and plating machine, with cathode structure device that meets the vacuum splashing and plating demand and the vacuum splashing and plating gallery device that can cooperate wide range of types, can be used for photoelectricity and semiconductor devices, so that low-cost electricity slurry to be provided with simple structure.
The technical scheme that realizes the purpose of this utility model is as follows:
A kind of cathode structure of vacuum splashing and plating machine comprises: the auxiliary magnetic field generation device, and it is connected with the frame mechanicalness of vacuum splashing and plating machine, can produce auxiliary magnetic field; Target, itself and electric field negative electrode join and have medial surface and outer side, and described medial surface is towards described auxiliary magnetic field generation device, and described outer side is towards the bombardment charged particle of vacuum splashing and plating machine; And interference magnetic piece, it makes and places the medial surface of described target with magneticsubstance, and between described target and auxiliary magnetic field generation device, by disturbing the effect of magnetic piece, make auxiliary magnetic field be interfered, cause this bombardment charged particle bombardment target effect very even.Described interference magnetic piece is the permeable material formation that has the material of permanent magnetism or have soft magnetic property.
The cathode structure of described vacuum splashing and plating machine further has one and connects the bearing metal plate, and it is between this auxiliary magnetic field generation device and target, and this interference magnetic piece is arranged in this connection bearing metal plate.
The cathode structure of described vacuum splashing and plating machine can further have an indium and link structure, and it connects between bearing metal plate and the target at this.
The cathode structure of described vacuum splashing and plating machine can further have an elasticity target lock solid structure, and this target that is used to lock is in this connection bearing metal plate.
The beneficial effects of the utility model are: can produce wideer under same size negative electrode framework and magnetic field, vertically uniform sputter district, make the V-arrangement corrosion area that general sputter produced become all kinds of required flat U-shaped corrosion areas, and under same condition, can obtain more sputter particle on unit time, because sputter motivation district broadens, can improve the collision between the sputter particle, make that the sputter particle is easier to be combined with reactant gases, and arrival plated body surface, therefore can reach the consumption of target in the sputter rete sputter process of same structure with lower-wattage, because magnetic field is subjected to the control of magneticinterference sheet, the corrosion area of target (impact zone) can not narrow down and diminish, can continue downcutting with the homogeneous width, can obtain required various wide magnetic field structure simple and easy and at low cost, strengthen or weaken certain regional magnetic field on the negative electrode, to obtain various special sputter particle distribution demands.Above characteristics can produce following advantage: (with traditional magnetic field relatively) 1, under identical sputter condition, target life can increase 50-200%, and very big effect is arranged on reducing cost; 2, except the target life increase reduces cost, make to be greatly improved on product quality and the mobility, can increase the output value 15% approximately.
Description of drawings
The utility model is described in further detail below in conjunction with accompanying drawing:
Fig. 1 is existing sputtering cathode device construction synoptic diagram;
Fig. 2 is the sputtering cathode device construction synoptic diagram of existing another example;
Fig. 3 is the cathode structure synoptic diagram of vacuum splashing and plating machine of the present utility model;
Fig. 4 is the cathode structure synoptic diagram of the vacuum splashing and plating machine of another embodiment of the utility model.
Among the figure: 1, target; 11, indium links structure 13, connects the bearing metal plate; 15, outer side; 17, medial surface; 2, auxiliary magnetic field generation device (containing cathode electric field); 21, magnetic pole; 22, support (containing the anode electric field); 3, disturb magnetic piece; 4, elasticity target lock solid structure.
Embodiment,
As shown in Figure 3-4, the cathode structure of vacuum splashing and plating machine of the present utility model comprises: auxiliary magnetic field generation device 2, and it is connected with the mechanical frame of vacuum splashing and plating machine, can produce auxiliary magnetic field; Target 1 is connected with the electric field negative electrode, has medial surface 17 and outer side 15, and medial surface 17 is towards auxiliary magnetic field generation device 2, and outer side 15 is towards the bombardment charged particle of vacuum splashing and plating machine; And disturb magnetic piece 3, and make with magneticsubstance, place side 17 within the target 1, and between target 1 and auxiliary magnetic field generation device 2; By disturbing magnetic piece 3 effects to make auxiliary magnetic field be interfered, cause this bombardment charged particle bombardment target effect more even.The utility model can further have one and link bearing metal plate 13, and it is between this auxiliary magnetic field generation device 2 and target 1; And this interference magnetic piece 3 is positioned among this connection bearing metal plate 13; And can further have an indium and connect structure 11, it connects between bearing metal plate 13 and the target 1 at this; Also can not use indium binding structure 11 and further have an elastic force target lock solid structure 4, be used to lock this target 1 on this connection bearing metal plate 13; Wherein this interference magnetic piece 3 can be the material with permanent magnetism and constitutes, and also can be the permeable material with soft magnetic property and constitutes.
The utility model disturbs magnetic sheet 3 with different being in having increased by one of prior art maximum, after adding the utility model and prior art main difference point interference magnetic piece 3, the magnetic field shape of auxiliary magnetic field is changed, make the charged particle of bombardment have bigger bombardment face, with consumption situation V-arrangement corrosion area improvement the becoming U-shaped corrosion area of target 1.
Further increase numerical value the work-ing life of exposure the utility model various targets after actually operating, the utility model is under same board, vacuum tightness and power behaviour in service, metal targets (Ti, Nb, Cr 8mmt) increases life-span 50%, nonmetal target (Si, 6mmt) can increase the life-span 57%, metal oxide target (ITOTio Zno 6mm) can increase the life-span 200%.
The foregoing description is the preferred embodiment on the utility model industry, all equivalences of being done according to the utility model claim change all belong to this case claim in.
Claims (5)
1, a kind of cathode structure of vacuum splashing and plating machine comprises: the auxiliary magnetic field generation device, and it is connected with the frame mechanicalness of vacuum splashing and plating machine; Target, itself and electric field negative electrode join and have medial surface and outer side, and described medial surface is towards described auxiliary magnetic field generation device, and described outer side is towards the bombardment charged particle of vacuum splashing and plating machine; It is characterized in that: also comprise the interference magnetic piece, described interference magnetic piece places the medial surface of described target and between described target and auxiliary magnetic field generation device.
2, the cathode structure of vacuum splashing and plating machine as claimed in claim 1 is characterized in that: described interference magnetic piece is the permeable material formation that has the material of permanent magnetism or have soft magnetic property.
3, the cathode structure of vacuum splashing and plating machine as claimed in claim 1 or 2, it is characterized in that: the cathode structure of described vacuum splashing and plating machine further has one and connects the bearing metal plate, this connection bearing metal plate between this auxiliary magnetic field generation device and target and described interference magnetic piece be arranged in this and be connected the bearing metal plate.
4, the cathode structure of vacuum splashing and plating machine as claimed in claim 3 is characterized in that: the cathode structure of described vacuum splashing and plating machine further has an indium and links structure, and this indium links structure and connects between bearing metal plate and the target at this.
5, the cathode structure of vacuum splashing and plating machine as claimed in claim 3 is characterized in that: the cathode structure of described vacuum splashing and plating machine further has an elasticity target lock solid structure, to lock this target on this connection bearing metal plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201358860U CN201301337Y (en) | 2008-10-10 | 2008-10-10 | Cathode structure of vacuum sputtering machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201358860U CN201301337Y (en) | 2008-10-10 | 2008-10-10 | Cathode structure of vacuum sputtering machine |
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| Publication Number | Publication Date |
|---|---|
| CN201301337Y true CN201301337Y (en) | 2009-09-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2008201358860U Expired - Fee Related CN201301337Y (en) | 2008-10-10 | 2008-10-10 | Cathode structure of vacuum sputtering machine |
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| CN (1) | CN201301337Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110684952A (en) * | 2018-11-20 | 2020-01-14 | 住华科技股份有限公司 | Target material structure |
-
2008
- 2008-10-10 CN CNU2008201358860U patent/CN201301337Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110684952A (en) * | 2018-11-20 | 2020-01-14 | 住华科技股份有限公司 | Target material structure |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090902 Termination date: 20121010 |