CN201270249Y - Silicon base imaging device for enhancing ultraviolet response based on inorganic material - Google Patents
Silicon base imaging device for enhancing ultraviolet response based on inorganic material Download PDFInfo
- Publication number
- CN201270249Y CN201270249Y CNU200820152199XU CN200820152199U CN201270249Y CN 201270249 Y CN201270249 Y CN 201270249Y CN U200820152199X U CNU200820152199X U CN U200820152199XU CN 200820152199 U CN200820152199 U CN 200820152199U CN 201270249 Y CN201270249 Y CN 201270249Y
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- membrane
- imaging device
- ultraviolet
- silicon
- light
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Abstract
A silicon-based imaging device based on the reinforced ultraviolet response of inorganic material is characterized in that the light incident face of the photosensitive face substrate of a photoelectric device is plated with one Zn2SiO4: Mn membrane for converting ultraviolet radiation into visible light, and the membrane is tightly combined with the photosensitive face substrate of the silicon-based imaging device. The membrane converts ultraviolet light into visible light. The mass ratio between Zn2SiO4 and Mn of the Zn2SiO4: Mn membrane is 100: 2.4. The ultraviolet response inorganic membrane of silicon-based imaging device has high transfer efficiency, whose emission peak wavelength is 525nm at the wavelength band of highest sensitivity of the CCD detectors and the like. The inorganic variable-frequency membrane overcomes the attenuation aging problem along time, and can effectively improve the sensitivity of silicon-based imaging device on ultraviolet light.
Description
Technical field
The utility model relates to a kind of silica-based image device that strengthens the ultraviolet response based on inorganic material.
Background technology
The ultraviolet response that strengthens silica-based image device is at CCD (Charge Coupled Device, charge coupled device) on the electro-optical imaging sensors such as imageing sensor, COMS (Complementary Metal-Oxide Semiconductor, additional metal oxide semiconductor assembly) device use widely.In recent years, the development of digital image sensor and application were advanced by leaps and bounds, but because ultraviolet light is lower than 2nm in the silica-based transmission depth of traditional CCD, COMS imageing sensor, caused CCD, COMS not to respond ultraviolet light.In order further to improve the performance of imageing sensors such as CCD, COMS, it also can be responded at the ultraviolet light wave band, the research tool that strengthens ultraviolet response of silicon based image device has very important significance.
In order to obtain the ultraviolet detector of high-quantum efficiency, high transformation efficiency and high stability, should seek that a kind of transformation efficiency height, excitation spectrum scope are wide, light-emitting phosphor is not stimulated the fluorescent material that wavelength restriction, emission spectrum and used explorer response spectrum are complementary, and the material that will have above-mentioned character is plated on CCD, the CMOS photosurface.External having developed can be satisfied the film that strengthens the response of detector ultraviolet, generally is to use organic fluorescence materials Lumogen, with vacuum deposition method at the sensitive detection parts surface filming.Though film that this method is plated is uniform and stable, in the process of material gasification, change the luminous efficiency of luminescent material easily, reduced the transformation efficiency of the film that plates.And what this method was used is organic frequency conversion material, so film exists aging attenuation problem, and with after a period of time, the conversion efficiency of film will reduce greatly.Aging attenuation problem is the shortcoming of external prior art maximum.
The utility model content
The purpose of this utility model is not respond ultraviolet light and the general film plating process luminous efficiency to the malleable luminescent material that strengthens its ultraviolet response and exist at imageing sensors such as existing C CD, COMS, reduce the transformation efficiency of the film that plates and the shortcomings such as aging attenuation problem of organic film, a kind of silica-based image device that strengthens the ultraviolet response based on inorganic material is provided; The technical solution of the utility model is that aspect such as the transformation efficiency, quantum efficiency, light transmission, mechanical strength, uniformity from film is taken all factors into consideration, and adopts Zn
2SiO
4: Mn luminescent material, preparation ultraviolet frequency conversion film, to improve the light transmission and the transformation efficiency of photodetector.
A kind of silica-based image device based on the response of inorganic material enhancing ultraviolet strengthens silica-based image device, it is characterized in that: the Zn that ultra-violet radiation can be converted to visible light at light entrance face plating one deck of photoelectric device photosurface substrate
2SiO
4: the Mn rete; Combine with silica-based image device photosurface substrate is fine and close.This rete is converted into visible light with ultraviolet light;
Described Zn
2SiO
4: Mn rete, Zn
2SiO
4With the mass ratio of Mn be Zn
2SiO
4: Mn=100:2.4.
Strengthen the ultraviolet response of silicon based image device film and select Zn for use
2SiO
4: Mn is as the frequency conversion material, is because 1. Zn
2SiO
4: the average grain diameter of Mn smaller (7.7 μ m) can make single thin film; 2. Zn
2SiO
4: the luminous efficiency of Mn is good, and excitation peak is at 250-260nm, and emission peak can be converted into green glow with ultraviolet light at 525nm, mates just with the response spectrum of CCD.
The prepared ultraviolet response of silicon based image device inorganic thin film of the utility model has better conversion efficient at 250-270nm, and its emission peak is at 525nm, just in the most responsive response wave band of detectors such as CCD; Inorganic frequency conversion film has overcome the aging problem of decay in time, can effectively strengthen the susceptibility of silica-based image device to ultraviolet light.
Description of drawings
Employed rotary plating device schematic diagram when Fig. 1 prepares for the utility model;
Fig. 2 is the utility model strengthens the ultraviolet response based on inorganic material a silica-based image device structural representation;
Fig. 3 is Zn
2SiO
4: Mn film excitation spectrum curve chart;
Fig. 4 is Zn
2SiO
4: the spectral radiation curves figure of Mn film when 265nm excites.
1. rotary-tray, the 2. device of clamping substrate, 3.CCD photosurface substrate, 4.Zn
2SiO
4: the Mn film.
From curve of spectrum Fig. 3 as can be known, described film excitation peak is between 250nm-260nm, and excitation peak is at the 255nm place. From Spectral radiation curves Fig. 4 as can be known, institute's made membrane emission peak is between 510nm-550nm, emission peak is at the 525nm place. Namely should Film can be converted into visible light with ultraviolet light, realizes the response of photoelectric device ultraviolet.
Embodiment
The present invention is described in detail below in conjunction with embodiment.
A kind of silica-based image device based on the response of inorganic material enhancing ultraviolet, its structure can be converted to ultra-violet radiation the Zn of visible light as shown in Figure 2 at light entrance face plating one deck of CCD photosurface substrate 3
2SiO
4: Mn rete 4; Combine with silica-based image device photosurface substrate is fine and close.This rete is converted into visible light with ultraviolet light; Described Zn
2SiO
4: Mn rete 4, Zn
2SiO
4With the mass ratio of Mn be Zn
2SiO
4: Mn=100:2.4.
A. at first CCD photosurface substrate 3 is cleaned and dries up with nitrogen, place then on the rotary-tray 1, stable with device 2 clampings of clamping substrate;
B. according to Zn
2SiO
4With the mass ratio of Mn be Zn
2SiO
4: Mn=100:2.4; Methyl methacrylate and Zn
2SiO
4: Mn fluorescent material is pressed mass ratio 1:0.94: preparation colloidal sol, fully stirred 10 minutes;
Drip last 2 colloidal sols that prepare on the c.CCD photosurface substrate 3; With 25/3 (r/s
2) acceleration startup rotary plating machine, last rotary speed reaches 5000r/min, continues for 60 seconds; With-25/3 (r/s
2) acceleration braking rotary plating machine, make preliminary film;
D. drip 0.4ml toluene on the prepared preliminary film of c step, repeating the c operation, taking out sample, making finished films.
Claims (1)
1. the silica-based image device based on the response of inorganic material enhancing ultraviolet is characterized in that: the Zn that ultra-violet radiation can be converted to visible light at light entrance face plating one deck of photoelectric device photosurface substrate
2SiO
4: the Mn rete; Combine with silica-based image device photosurface substrate is fine and close.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820152199XU CN201270249Y (en) | 2008-08-21 | 2008-08-21 | Silicon base imaging device for enhancing ultraviolet response based on inorganic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820152199XU CN201270249Y (en) | 2008-08-21 | 2008-08-21 | Silicon base imaging device for enhancing ultraviolet response based on inorganic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201270249Y true CN201270249Y (en) | 2009-07-08 |
Family
ID=40842857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200820152199XU Expired - Fee Related CN201270249Y (en) | 2008-08-21 | 2008-08-21 | Silicon base imaging device for enhancing ultraviolet response based on inorganic material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201270249Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683369A (en) * | 2012-04-20 | 2012-09-19 | 广东普加福光电科技有限公司 | Preparation method and application of quantum dot light conversion film for enhancing ultraviolet response of silicon-based imaging device |
-
2008
- 2008-08-21 CN CNU200820152199XU patent/CN201270249Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683369A (en) * | 2012-04-20 | 2012-09-19 | 广东普加福光电科技有限公司 | Preparation method and application of quantum dot light conversion film for enhancing ultraviolet response of silicon-based imaging device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Liu Meng Inventor after: PI Dao Rui Inventor after: Du Wenchao Inventor after: Zhang Dawei Inventor after: Tian Xin Inventor after: Ni contend for technology Inventor after: Huang Yuan Shen Inventor after: Zhuang Songlin Inventor before: Liu Meng Inventor before: Zhang Dawei Inventor before: Tian Xin Inventor before: Ni contend for technology Inventor before: Huang Yuan Shen Inventor before: Zhuang Songlin |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LIU MENG; ZHANG DAWEI; TIAN XIN; NI ZHENGJI; HUANG YUANSHEN; ZHUANG SONGLIN TO: LIU MENG; PIDAORUI; DU WENCHAO; ZHANG DAWEI; TIAN XIN; NI ZHENGJI; HUANG YUANSHEN; ZHUANG SONGLIN |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090708 Termination date: 20100821 |