CN107039556A - A kind of photovoltaic conversion structure - Google Patents
A kind of photovoltaic conversion structure Download PDFInfo
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- CN107039556A CN107039556A CN201710269695.7A CN201710269695A CN107039556A CN 107039556 A CN107039556 A CN 107039556A CN 201710269695 A CN201710269695 A CN 201710269695A CN 107039556 A CN107039556 A CN 107039556A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 41
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 45
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910021340 platinum monosilicide Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 13
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 31
- 238000010521 absorption reaction Methods 0.000 abstract description 22
- 238000001228 spectrum Methods 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 239000002131 composite material Substances 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 7
- 230000009466 transformation Effects 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 231100000289 photo-effect Toxicity 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002594 sorbent Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention discloses a kind of photovoltaic conversion structure, including：P-type silicon substrate layer, its back side is provided with anti-reflective film layer, its surface is provided with the black silicon layer of cone-shaped micro-nano array formation, PtSi film layers are sequentially provided with from the inside to the outside on the black silicon layer, hot hole reflecting medium layer and electrode layer formation on-plane surface micro-structural, wherein, black silicon layer and PtSi film layers formation schottky junction, PtSi film layers, hot hole reflecting medium layer and electrode layer three form reflection optical cavity.The present invention utilizes the sunken luminous effect of black silicon and builds nonplanar structure reflection optical cavity, so that structure of the present invention can realize strong absorption, high response in wide spectral range, and then the problem of solve narrow prior art photodetector response spectrum and low solar cell photoelectric conversion efficiency.It the composite can be widely applied in photoproduction electro-technical field, such as solar battery technology and photodetector technology.
Description
Technical field
The present invention relates to a kind of photovoltaic conversion structure with wide spectrum response, high-absorbility.
Background technology
The theoretical foundation of photoelectric conversion technique comes from photoelectric effect, and it is to study using photon as information carrier and energy loading gage
The science of body.Photoelectric effect include inner photoeffect and external photoeffect, wherein inner photoeffect include photovoltaic effect and
Photoconductive effect, so-called photovoltaic effect refers to illumination so that inhomogeneos semiconductor or semiconductor and the difference of metallic combination
The phenomenon of potential difference is produced between position；So-called photoconductive effect is that illumination acts on lower Electron absorption photon energy from bond styles
Excessively arrive free state so that the phenomenon that material electric conductivity changes.The electric battery of photoproduction manufactured using photovoltaic effect
It is widely used in the fields such as space development, air transportation, meteorological observation, communication apparatus, signal designation；Utilize photoconductive effect system
The photodetector made is widely used in the fields such as guidance, safety check, drug identification, monitoring, imaging.
It is eternally immutable theme in photoelectric conversion technique to improve photoelectric transformation efficiency, for example：Solar power generation is given
The energy consumption structure of the mankind brings revolutionary variation, and future will develop into the important support comparable with modern fossil energy
Performance source, but cost for solar power generation is higher, and photoelectric transformation efficiency is unsatisfactory so that the big rule of solar energy power generating
Mould application is restricted；In addition, existing photodetector has the defect of response spectrum narrow range, and photoelectric transformation efficiency is urgently
Improve, traditional PtSi/P-Si Schottky infrared detectors operate mainly in middle-infrared band (3~5 μm), integrated black silicon
MSM types detector can only also have near infrared band preferably absorbs response, above-mentioned not enough so that narrowband response photodetector
The demand of engineering can not be met.So, development wide spectrum, strong absorption, the Photodetection system of high response become photodetection
One of field important research direction,
It is to improve an important channel of photoelectric transformation efficiency to reduce reflection loss, realize to the efficient absorption of light；Meanwhile,
The utilization ratio to light can not only be improved by widening the response spectrum of photovoltaic conversion structure, and can widen photovoltaic conversion structure
Application field.Therefore, need badly a kind of can realize strong absorption, the opto-electronic conversion knot of high response in wide spectral range
Structure.
The content of the invention
In view of the demand of prior art, the technical problems to be solved by the invention are to provide a kind of with high opto-electronic conversion
The photovoltaic conversion structure of efficiency, the present invention utilizes the sunken luminous effect of black silicon and builds nonplanar structure on the light trapping structure of black silicon
Optical cavity is reflected, at utmost to improve the light path that light passes through in device architecture, so as to improve light utilization efficiency；Using P-type silicon,
The different absorption response spectrum of black silicon, PtSi materials so that structure of the present invention can realize strong absorption, height in wide spectral range
Response, and then solve the problem of existing photovoltaic conversion structure response spectrum is narrow, photoelectric transformation efficiency is low.
To achieve the above object, the present invention provides following technical scheme：
A kind of photovoltaic conversion structure, including：P-type silicon substrate layer, PtSi film layers, hot hole reflecting medium layer and electrode
Layer, the P-type silicon substrate layer surface forms black silicon layer provided with cone-shaped micro-nano array；The black silicon surface is from the inside to the outside successively
Provided with PtSi film layers, hot hole reflecting medium layer and electrode layer formation on-plane surface micro-structural；Wherein, black silicon layer and PtSi films
Layer forms schottky junction, and PtSi film layers, hot hole reflecting medium layer and electrode layer three form reflection optical cavity.
Further, photovoltaic conversion structure of the present invention also includes the anti-reflective film layer for being arranged at the P-type silicon substrate layer back side；It is anti-
Reflective coating can increase the thang-kng amount of structure, and the thickness of anti-reflective film can rationally be designed according to functional need, according to this
Inventive embodiments, when response wave length scope is 0.4 μm~5 μm, it is 2.7 μm to take centre wavelength, if Refractive Index of Material is 1.5,
It is then to realize maximum antireflective effect, the thickness of anti-reflective film layer according to can be calculated in 0.4 μm~5 μm of response wave length scope
It should be 450nm.
Further, in order to reduce loss of the incident light before black silicon layer is reached, while meeting in short wavelength range
Photon excitation, the present invention in P-type silicon substrate layer thickness be 1~10 μm.
Black silicon layer of the present invention with cone-shaped micro-nano array is actually a kind of on-plane surface light trapping structure, passes through black silicon
Fall into luminous effect so that light passes through multiple reflection in light trapping structure, improve the light path passed through, to improve light utilization ratio,
And then increase absorptivity；And the cone-shaped micro-nano array prepared on P-type silicon substrate layer tends to be controllable, its shape size
Can be by technology controlling and process, the basal diameter of any pointed cone is any not less than 0.5 μm in the micro-nano array of black silicon layer in the present invention
The height of pointed cone is not less than 2 μm.
Further, the ratio between the height of any pointed cone and basal diameter are not less than 5: 1.
PtSi film layers are set directly at the light trapping structure surface of black silicon layer in the present invention, with black silicon formation Schottky gesture
Build, to make the hot hole produced in PtSi layers by photon excitation smoothly cross potential barrier, the thickness of PtSi films should be less than hole and exist
Mean free path therein, therefore, the thickness of PtSi film layers is not more than 50nm in the present invention.
In order to stop that the hot hole in PtSi film layers spreads, the efficiency of hole implanting p-type silicon substrate is improved, the present invention is excellent
The material for selecting hot hole reflecting medium layer is Si3N4。
According to embodiments of the present invention, the material of electrode layer is aluminium (Al) in the present invention；In order to ensure aluminium as electrode
Layer is for conducting photo-generated carrier, while also can be as reflecting layer with PtSi film layers and hole reflections dielectric layer formation on-plane surface
The reflection optical cavity of micro-structural, and then light is passed through multiple reflections, to absorb more luminous energy, therefore preferably,
The thickness of aluminium electrode layer is not less than 100nm in the present invention.The photovoltaic conversion structure that the present invention is provided can be used as photodetector or
Person's solar cell.
The principle of the present invention is as follows：
The Schottky barrier of black silicon and PtSi formation distinguishes the hole produced by photoconductive effect and electronics in the present invention
Hoarded in black silicon, PtSi, form built-in field, produce photovoltaic effect, meanwhile, the carrier on both sides can be drawn by electrode
Go out, form electric current.
To improve photoelectric transformation efficiency, the present invention improves absorptivity by reasonable design structure first, wherein main logical
Cross following three kinds of approach：(1) P-type silicon substrate layer the back side design anti-reflective film layer, it is ensured that light enter structure before just
Possesses larger throughput, to provide light radiation for follow-up absorption；(2) by designing cone-shaped on P-type silicon substrate layer
Micro-nano array forms black silicon layer, not only increases effective sorbent surface product of structure, also causes light in cone-shaped micro-nano array
Between carry out multiple reflections, improve light stroke, improve absorptivity, increase the probability of opto-electronic conversion；(3) black silicon layer is passed through
On PtSi film layers, hot hole reflecting medium layer and electrode layer this three form nonplanar structure reflection optical cavity, increase light
Transmission light path, it is secondary on the basis of black silicon light trapping structure to improve the light absorbs that reflection produces and utilize, greatly reduce light because
The energy loss of generation is spilt, to absorb more luminous energy, increase the probability of opto-electronic conversion.
In addition, the present invention also widens the response spectrum of photovoltaic conversion structure by following technological means：Due to this hair
Bright middle P-type silicon material, black silicon material, PtSi materials have a different energy gaps, light when by different material layers, its
The light of different-waveband is absorbed response by different materials respectively, therefore total absorption response spectrum of the photovoltaic conversion structure is opened up
Width, it is achieved thereby that the absorption response in wide spectral range；Further, the impurity energy level that black silicon is introduced in preparation process makes
Obtaining the energy gap of black silicon further reduces, and enables to further widen absorption response spectrum scope.P-type silicon material is multipair
The absorption response spectrum of short-wave band is answered, visible ray and near-infrared in 1.1 μm is more common in；The suction of the medium wave band of correspondence more than black silicon material
Response spectrum is received, is more common in infrared in 1.1 μm~5 μm near；The absorption spectrum of the long-wave band of correspondence more than PtSi materials, is more common in 3 μ
Mid and far infrared outside m.The response of its grading absorption may refer to accompanying drawing 3.
Compared with prior art, the invention has the advantages that：
The present invention is responded by grading absorption, has widened the response range of spectrum, and then has widened the application model of the present invention
Enclose, can solve the problem that the problem of prior art photodetector response spectrum is narrow；The present invention is by falling into luminous effect and the micro- knot of on-plane surface
Structure light reflection cavity improves the absorptivity and utilization rate of light, can be seen that according in Figure of description 4：Black silicon material of the present invention is not
In the case of doping, absorptivity can be greatly improved by this new structure.Therefore, opto-electronic conversion knot provided by the present invention
Structure can realize strong absorption, high response in wide spectral range, can be widely applied in photoproduction power technology, for example solar cell
Technology and photodetector technology.
Brief description of the drawings
Fig. 1 is the schematic diagram of photovoltaic conversion structure of the present invention；
Fig. 2 is that photovoltaic conversion structure of the present invention is strengthened by black silicon light trapping structure (block arrow) and optical cavity structure (thin arrow)
The schematic diagram of absorption efficiency；
Fig. 3 is the schematic diagram that photovoltaic conversion structure wide spectrum of the present invention is segmented response；
Fig. 4 is the specific embodiment of the invention in the absorptivity of 0.4~1.7 mu m waveband, transmissivity, reflectivity simulation curve；
Wherein, 1 is anti-reflective film layer, and 2 be P-type silicon substrate layer, and 3 be black silicon layer, and 4 be PtSi film layers, and 5 be that hot hole is anti-
Dielectric layer is penetrated, 6 be electrode layer.
Embodiment
The principle of the invention is described in detail below in conjunction with the specific embodiment of the invention and Figure of description：
Embodiment：
It is the structural representation of this photovoltaic conversion structure specific embodiment as shown in Figure 1, including：It is arranged at P-type silicon substrate
Layer 2 back side anti-reflective film layer 1 and located at P-type silicon substrate layer 2 surface cone-shaped micro-nano array formation black silicon layer 3, institute
State the black surface of silicon layer 3 and be sequentially provided with PtSi film layers 4, hot hole reflecting medium layer 5 and the formation on-plane surface of electrode layer 6 from the inside to the outside
Micro-structural；Wherein, black silicon layer 3 and the formation schottky junction of PtSi film layers 4, PtSi film layers 4, the and of hot hole reflecting medium layer 5
The three of electrode layer 6 forms reflection optical cavity.
Specifically, the thickness of P-type silicon substrate layer 2 is 2 μm in the present embodiment；
Specifically, the bottom surface average diameter of pointed cone is 1 μm in the micro-nano array of black silicon layer 3 in the present embodiment；The height of pointed cone
Spend for 5 μm；The ratio between height and basal diameter of pointed cone are 5: 1；
Specifically, the thickness of PtSi film layers 4 is 50nm in the present embodiment.
Specifically, the material of hot hole reflecting medium layer 5 is Si in the present embodiment3N4, its thickness is 50nm；
Specifically, the material of electrode layer 6 is Al in the present embodiment, and its thickness is 100nm.
The photovoltaic conversion structure that the embodiment of the present invention is provided can improve absorptivity, and it mainly passes through following three kinds of ways
Footpath：
(1) anti-reflective film layer is designed at the back side of P-type silicon substrate layer, it is ensured that light just possesses larger before structure is entered
Throughput, to provide light radiation for follow-up absorption；
(2) black silicon layer is formed by designing cone-shaped micro-nano array on P-type silicon substrate layer, not only increase structure has
Sorbent surface product is imitated, also causes light to carry out multiple reflections between cone-shaped micro-nano array, light stroke is improved, improves light
Absorptivity, the probability for increasing opto-electronic conversion；
(3) the PtSi film layers on black silicon layer, hot hole reflecting medium layer and electrode layer this three formation on-plane surface are passed through
Structure reflects optical cavity, increases the transmission light path of light, and the secondary light for improving reflection generation is inhaled on the basis of black silicon light trapping structure
Receive and utilize, greatly reduce energy loss of the light because spilling generation, to absorb more luminous energy, increase the several of opto-electronic conversion
Rate.
As shown in Fig. 2 wherein block arrow represents the light by black silicon light trapping structure, thin arrow is represented by optical cavity structure
Light, it is as implied above by both modes can reach enhancing absorption efficiency purpose.
On the other hand, as shown in figure 3, the present invention is using grading absorption response, due to P-type silicon material, black silicon in the present invention
Material, PtSi materials have different energy gaps, wherein the impurity energy level that black silicon is introduced in preparation process is so that black silicon
Energy gap is further reduced, and light is when by different material layers, and the light of its different-waveband is absorbed respectively by different materials
Respond, therefore total absorption response spectrum of the photovoltaic conversion structure is widened, it is achieved thereby that the suction in wide spectral range
Receive response.Further, the absorption response spectrum of the short-wave band of correspondence more than P-type silicon material, is more common in visible ray in 1.1 μm and near
It is infrared；The absorption response spectrum of the medium wave band of correspondence more than black silicon material, is more common in infrared in 1.1 μm~5 μm near；PtSi materials are more
The absorption spectrum of correspondence long-wave band, is more common in the mid and far infrared outside 3 μm.
Fig. 4 is the specific embodiment of the invention in the absorptivity of 0.4~1.7 mu m waveband, transmissivity, reflectivity simulation curve；
Specifically, because simulation software material depot is free of PtSi material parameter, PtSi optical constant is by instrument Filmetrics
F20 tests are obtained, therefore are chosen tester and emulated in 0.4~1.7 μm of service band；Structural parameters are set such as preceding institute
State；By setting optical field detection device to distinguish reflectivity R, the transmissivity T of measurement structure before and after structure, by utilizing formula as follows
Calculate the absorptivity for obtaining the structure：
A=1-T-R
Wherein：A is absorptivity, and T is transmissivity, and R is reflectivity.
As can be seen from Figure 4：Photovoltaic conversion structure proposed by the present invention preferably, reaches 80% in medium-long wave band absorptivity
More than；Simultaneously because anti-reflecting layer thickness can not take into account all incident wavelengths, at shortwave end because reflectivity is bigger to a certain extent
The absorption of structure is have impact on, but is still maintained at more than 60%, whole wave band is because of the light trapping structure and reflection optical cavity of black silicon, thoroughly
The rate of penetrating is reduced to less than 1%, it is seen that the effect that the structure improves light absorbs is notable.
Embodiments of the invention are set forth above in association with accompanying drawing, but the invention is not limited in above-mentioned specific
Embodiment, above-mentioned embodiment is only schematical, rather than restricted, and one of ordinary skill in the art exists
Under the enlightenment of the present invention, in the case of present inventive concept and scope of the claimed protection is not departed from, many shapes can be also made
Formula, these are belonged within the protection of the present invention.
Claims (10)
1. a kind of photovoltaic conversion structure, including：P type substrate layer (2), PtSi film layers (4), hot hole reflecting medium layer (5) and
Electrode layer (6), it is characterised in that described P type substrate layer (2) surface forms black silicon layer (3) provided with cone-shaped micro-nano array；It is described
Black silicon layer (3) surface is sequentially provided with PtSi film layers (4), hot hole reflecting medium layer (5) and electrode layer (6) formation from the inside to the outside
On-plane surface micro-structural；Wherein, black silicon layer (3) and PtSi film layers (4) formation schottky junction, PtSi film layers (4), hot hole are anti-
Penetrate dielectric layer (5) and electrode layer (6) three forms reflection optical cavity.
2. a kind of photovoltaic conversion structure according to claim 1, it is characterised in that the thickness of P-type silicon substrate layer (2) is 1
~10 μm.
3. a kind of photovoltaic conversion structure according to claim 1, it is characterised in that appoint in the micro-nano array of black silicon layer (3)
The basal diameter of one pointed cone is not less than 0.5 μm, and the height of any pointed cone is not less than 2 μm.
4. a kind of photovoltaic conversion structure according to claim 3, it is characterised in that the height and basal diameter of any pointed cone
The ratio between be not less than 5: 1.
5. a kind of photovoltaic conversion structure according to claim 1, it is characterised in that the thickness of PtSi film layers (4) is little
In 50nm.
6. a kind of photovoltaic conversion structure according to claim 1, it is characterised in that the material of hot hole reflecting medium layer (5)
Expect for Si3N4。
7. a kind of photovoltaic conversion structure according to claim 1, it is characterised in that the material of electrode layer (6) is Al.
8. a kind of photovoltaic conversion structure according to claim 7, it is characterised in that the thickness of aluminium electrode layer is not less than 100
Nanometer.
9. a kind of photovoltaic conversion structure according to any one of claim 1 to 8, it is characterised in that also including being arranged at p-type
The anti-reflective film layer (1) at substrate layer (2) back side.
10. a kind of photovoltaic conversion structure according to any one of claim 9, it is characterised in that the photovoltaic conversion structure
It is used as photodetector or solar cell.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659374A (en) * | 2018-11-12 | 2019-04-19 | 深圳市灵明光子科技有限公司 | Photodetector, the preparation method of photodetector, photodetector array and photodetection terminal |
| CN110206172A (en) * | 2019-06-10 | 2019-09-06 | 苏州大学 | A kind of passive cooling system based on micro-nano structure |
| CN110718596A (en) * | 2019-09-11 | 2020-01-21 | 复旦大学 | PN junction enhanced black silicon Schottky junction infrared detector and preparation method thereof |
| CN110931577A (en) * | 2019-11-11 | 2020-03-27 | 中国科学院上海技术物理研究所 | Artificial microstructure with longitudinally-graded plasmon enhanced infrared wide-spectrum absorption |
| CN113324662A (en) * | 2021-05-17 | 2021-08-31 | 深圳先进技术研究院 | Uncooled infrared detector and preparation method thereof |
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| CN109659374A (en) * | 2018-11-12 | 2019-04-19 | 深圳市灵明光子科技有限公司 | Photodetector, the preparation method of photodetector, photodetector array and photodetection terminal |
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| CN110718596A (en) * | 2019-09-11 | 2020-01-21 | 复旦大学 | PN junction enhanced black silicon Schottky junction infrared detector and preparation method thereof |
| CN110931577A (en) * | 2019-11-11 | 2020-03-27 | 中国科学院上海技术物理研究所 | Artificial microstructure with longitudinally-graded plasmon enhanced infrared wide-spectrum absorption |
| CN113324662A (en) * | 2021-05-17 | 2021-08-31 | 深圳先进技术研究院 | Uncooled infrared detector and preparation method thereof |
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