CN201260024Y - Phase changing heat radiating device - Google Patents
Phase changing heat radiating device Download PDFInfo
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- CN201260024Y CN201260024Y CNU2007201910917U CN200720191091U CN201260024Y CN 201260024 Y CN201260024 Y CN 201260024Y CN U2007201910917 U CNU2007201910917 U CN U2007201910917U CN 200720191091 U CN200720191091 U CN 200720191091U CN 201260024 Y CN201260024 Y CN 201260024Y
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Abstract
The utility model provides a phase transition heat-scattering device and a laser device; the phase transition heat-scattering device comprises an evaporation chamber, a cooling chamber and a heat conducting end used for transmitting the head from the objects to be cooled to the evaporation chamber; the heat conducting end includes a heat absorbing component which is covered on the periphery of the object to be cooled; adopting the technical proposal, the phase transition heat-scattering device has the advantages that the structure is simple, the heat-scattering efficiency is high, the heat scattering is even, the reliability is good, and the application range is wide, thus being applied to the heat scattering of high power optical element such as the laser crystal of the high power laser, the nonlinear optical crystal and the semiconductor laser chip, so as to lead an even heat scattering with high efficiency; therefore, the luminous efficiency, the optical output power, the optical beam quality and the service lift of the high power laser can be effectively improved; the laser performance can be more stable; in addition, the structure of the heat-scattering device is relatively simple; the application is wide; the volume of the high power laser can be effectively reduced; the device is energy-saving and environment-protecting; thus having more practical value for large-scale production.
Description
Technical field
The utility model relates to a kind of heat abstractor, particularly a kind of phase-change heat radiating device that is used for high power laser.
Background technology
High-power semiconductor laser repeatedly battle array and high power all solid state laser becomes the focus that competitively chase various countries with its wide application prospect and enormous and latent market.At present high-power semiconductor laser repeatedly the subject matter that faced of battle array be the low performance of laser, i.e. problems such as the power of laser, efficient, reliability and stability, consistency difference, this has limited its practical application to a great extent.The performance of laser is except that relevant with epitaxial material, also relevant with the heat dissipation of laser, because factors such as conversion efficiency, luminescent device integrated causes hot enrichment, hot enrichment will cause laser active area junction temperature to raise, thereby reduce the photoelectric conversion efficiency of laser, and the centre wavelength generation temperature of laser is floated, in addition, the laser junction temperature is too high will introduce defective at active area.Therefore repeatedly the stability of battle array device performance and reliability and junction temperature have direct relation to high-power semiconductor laser.Generally, high-power semiconductor laser is when repeatedly the working junction temperature of battle array is lower than 250 ℃, and laser can obtain maximum photoelectric conversion efficiency; When working junction temperature is lower than 500 ℃, the work that laser can be stable; And when working junction temperature was higher than 500 ℃, the performance of laser will degenerate very soon even lose efficacy.Therefore to obtain high stability high reliability high-power semiconductor laser repeatedly battle array just must design and produce high efficiency cooling system.Passively heat sinkly only be useful for low-power laser because of its thermal capacitance quantitative limitation; Active large passage, its thermal resistance of small channel heat sink are also higher relatively, are applicable to the mid power laser.And existing microchannel cooling heat sink is primarily aimed at the integrated design of microelectronics, it adopts the superimposed envelope of the uniform foil of polylith thickness to enclose and forms, thermo-contact is poor between sheet metal, the hydraulic pressure that can bear is low, heat-conducting effect is bad, when this in addition microchannel cooling heat sink changes battle array and all solid state laser at the preparation high-power semiconductor laser, because it can not directly cool off single laser array bar, therefore the temperature of heat sink surface can raise gradually along with the direction of coolant flow, make the laser inequality of being heated, influence the consistency of laser, this application for laser is totally unfavorable.
Thermal effect is the principal element that the restriction laser power improves at present.The thermal lensing effect of laser medium causes the skew of resonant cavity service area on the one hand, and the hot fevering sodium effect of laser medium causes laser loss under similar accent Q polarization working method to strengthen on the other hand.The cooling structure that reasonably designs pumping and difform laser medium is to solve the effective way that beam quality that laser device thermal effect problem brought descends.The mode of rod-shaped laser medium cooling has two kinds under the at present common side pumping mode: a kind of is to adopt the glass sock liquid cools, and another is to utilize heat sink conduction cooling.For the laser of under adverse circumstances, working, as the laser military, that space flight is used, the laser structure complexity of liquid cooling, reliability is relatively low.And the laser structure of heat sink conduction is simple relatively, reliability is high, preferablyly works under above-mentioned occasion.
In addition, in semiconductor pumped laser, traditional laser almost all makes the water cooling that circulates, and this inevitably exists, and cooling-water machine is bulky, temperature control precisely and generally can only be provided with problems such as a temperature, energy consumption is big, noise is big inadequately.At present, the heat radiation of noise spectra of semiconductor lasers is general adopts heat sink, fin and sheet microchannel, it is separated components, what have is welded together with both, can meet the demands for this radiating mode of low-power device, but for this minute discrete heat of high-power semiconductor laser or both combination radiating modes, radiating effect is undesirable.
In a word, present various heat-diffusing efficiency of heat abstractor are lower, for high power laser, can't reduce the laser works temperature expeditiously, and it is also also inhomogeneous to dispel the heat, thereby causes the reduction of high power laser luminous efficiency, power output reduction, beam quality decline, stability reduction, working life to reduce.If adopt modes such as boiler water circulation cooling, then exist volume greatly and more problems such as not environmental protection.
Summary of the invention
Therefore, task of the present utility model provides a kind of phase transformation cooling heat radiator;
Another purpose of the present utility model provides a kind of high power laser and laser array.
On the one hand, the utility model provides the phase transformation cooling heat radiator, comprises vaporization chamber and condensation chamber, and the heat that is used for being sent by the heat radiation object conducts to the heat conduction end of vaporization chamber, described heat conduction end comprises the heat absorption assembly, and described heat absorption assembly is coated on by around the heat radiation object.
In the said apparatus, described heat conduction end also comprises radiating subassembly, and the phase transformation working media is housed in the described vaporization chamber, and at least a portion of described radiating subassembly is soaked in the described phase transformation working media.
In the said apparatus, also comprise the temperature control equipment that is used to control the condensation chamber temperature.
Further, described temperature control equipment can use refrigerant compressor or semiconductor refrigeration chip etc., also both can be used in combination, and further promotes radiating efficiency.
In the said apparatus, described condensation chamber is connected by conduit with described vaporization chamber, can be provided with shutoff valve on the described conduit.
In the said apparatus, comprising the many conduits that connect described condensation chamber and described vaporization chamber, and can be independent separately between the described conduit, also can be interconnected.
In the said apparatus, described radiating subassembly outer surface is provided with radiating fin, and radiating fin can be shape of threads or zigzag.
In the said apparatus, described heat absorption components side section is wedge shape or rectangle.
In the said apparatus, the described phase transformation working media blending agent that two or more cooling work medium is formed of serving as reasons.
Said apparatus is particularly useful for the heat radiation to heater element in laser or the laser array.
On the other hand, the utility model provides a kind of laser, comprises heater element and the heat abstractor that is used to reduce temperature of heating elements, and described heat abstractor uses above-mentioned phase-change heat radiating device.
Described heater element is pumping sources such as laser crystal, semiconductor laser chip and nonlinear optical crystal etc.
Adopt the phase-change heat radiating device of technique scheme, have that temperature control is accurate, simple in structure, radiating efficiency is high, heat radiation is even, good reliability, advantage such as have wide range of applications, successfully improved the radiating effect of the high-power optical elements such as laser crystal, nonlinear optical crystal or semiconductor laser chip that are used for high power laser, make the even and radiating efficiency raising of its heat radiation, thereby improved luminous efficiency, optical output power, beam quality and the working life of high power laser effectively, made the performance of laser more reliable and stable.And construction for heat radiating device makes that relatively simply the volume of high power laser is effectively dwindled, and noise reduces, and energy environment protection has more the real value of large-scale production.In addition, heat abstractor is because its various advantages, applicable to scope more widely.
Description of drawings
Below, describe embodiment of the present utility model in conjunction with the accompanying drawings in detail, wherein:
Fig. 1-Fig. 4 is the schematic diagram of four kinds of heat absorption assemblies of phase-change heat radiating device;
Fig. 5 is the another kind heat absorption components side view of phase-change heat radiating device;
Fig. 6 is the inner side generalized section that is surrounded by the radiating subassembly of heat absorption assembly;
Fig. 7 is the side generalized section of phase-change heat radiating device;
Fig. 8 is the overall schematic that is used for the phase-change heat radiating device of array.
Embodiment
Below in conjunction with drawings and Examples the utility model is described in detail.
Fig. 1-Fig. 4 is the schematic diagram of four kinds of heat absorption modular constructions in the phase-change heat radiating device.
Fig. 1-Fig. 2 is two kinds of truncated rectangular pyramids type heat absorption assemblies, its cross section is respectively rectangle and square, Fig. 3 and Fig. 4 are two kinds of circular platform type heat absorption assemblies, its cross section is circular, and as Fig. 1-shown in Figure 4, the assembly that absorbed heat around the object 101 that dispel the heat coats, can fast and effeciently the heat that produces be conducted, wherein, Fig. 1-Fig. 3 is respectively sheet, bar-shaped and block by the heat radiation object, and the need heat radiation object of Fig. 4 also is block.Shown in Fig. 1 b-Fig. 4 b,, can utilize exterior mechanical stress to increase the heat conduction contact-making surface because heat absorption components side section is a wedge shape.Certainly, the heat absorption assembly also can be column or other suitable shapes.The material of heat absorption assembly adopts the high material of thermal conductivity, is preferably the Heat Conduction Material that aluminium alloy etc. is difficult for oxidation.
Fig. 1-heat absorption modular construction shown in Figure 4 is applicable to the laser or the laser array of single-point pumping and multi-point pump.Above cross sectional shape and design can be carried out appropriate change according to optical element or other different needs by radiating element.
Fig. 5 has provided the heat absorption assembly with another kind of side section shape, the side 502 of this segmentation has different gradients with 501 and 503, its shape helps fixing steadily and accurately the particular location of this structure, and this irregular stress surface structure still can produce mechanical stress.
The various heat absorption assembly appearance that Fig. 1-Fig. 5 provides; its purpose all is for the ease of to heat absorption assembly stress application; thereby increase the thermo-contact of heat absorption assembly and internal optical component and outside radiating subassembly; improve heat transfer efficiency; those skilled in the art are to be understood that; on the basis of above-mentioned instruction, can design the various heat absorption modular constructions of being convenient to stress application, all should be within the scope of the utility model claim protection.
Fig. 6 provides the profile that a kind of radiating subassembly inside is surrounded by the heat conduction end of heat absorption assembly, the surface of the optical element 601 that is dispelled the heat is coated with or is enclosed with Heat Conduction Material 608 to increase heat conduction, circular platform type heat absorption assembly 602 be coated on optical element 601 around, assembly 602 embedding radiating subassemblies 603 again will absorb heats.Radiating subassembly 603 is arranged with radiating fin 606, top at heat absorption assembly 602 is provided with interface 605, this interface can be connected with other optical elements in the light path and light beam is passed through, heat absorption assembly 602 bottoms are provided with trim ring 604, under the extruding of trim ring 604, make between heat absorption assembly 602 and the optical element 601, and between the wedge shape inwall of radiating subassembly 603 and the heat absorption assembly 602 wedge shape outer walls, remain certain stress, improve thermo-contact each other.Two openends of radiating subassembly can seal processing by the actual design requirement of laser, also can keep whole openings.In addition, also can on radiating subassembly 603 inwalls and/or heat absorption assembly 602 outer walls, plate thermal conductive material layer 607 to increase heat conduction efficiency.Thermal conductive material layer 607 can for the gold or other be difficult for the good conductor material of oxidized heat.Wherein, Heat Conduction Material 608 and thermal conductive material layer 607 also can be selected not carry out being coated with according to actual needs.
Fig. 7 is the side generalized section of phase-change heat radiating device, comprise the heat conduction end, vaporization chamber and condensation chamber, wherein, the structure of heat conduction end is identical with Fig. 6, radiating subassembly 714 can soak fully or partly be immersed in the phase transformation working media 707 in the vaporization chamber 705, vaporization chamber 705 is communicated with condensation chamber 706 by conduit 708, conduit 708 is aimed at the radiating subassembly of placing in the vaporization chamber 705 714 at the opening of vaporization chamber, so that cooled liquid can flow back on radiating subassembly 714 outer surfaces, the radiating end of described condensation chamber 706 is provided with fin 712, the top of described fin 712 is provided with semiconductor refrigeration chip (being called for short TEC) 710, can also fill metal or heat conductive silica gel 711 between the fin 712 of semiconductor refrigeration chip 710 and condensation chamber.Above-mentioned conduit 708 can also can be many for single, and many conduits can be independent separately, also can communicate with each other.Conduit can be screwed pipe, micro-rib pipe, collapsible tube, or porous surface tube, and its shape can be rectangle, circle or polygon etc.In addition, can also be provided with an insulating portion 709, be used to prevent the interference or the temperature interference that come from the outside, and many conduits 708 are arranged on the both sides of insulating portion 709, be used for carrying out the phase transformation circulation at the mid portion of condensation chamber 706.Insulating portion 709 also can be removed, and can still adopt a plurality of conduits in this case, also can change into adopting an integral duct.
In the heat abstractor of Fig. 7, radiating fin 704 be except can strengthening the heat transfer area, and constituted micro capillary groove evaporator, utilize capillary effect, promote the liquid level in the microflute, thereby increase the surface area of phase transformation working media 707, accelerate phase velocity, improve radiating efficiency.Vaporization chamber 705 and condensation chamber 706 adopts pressure-resistant materials, as metal etc., form seal chamber, and inside is evacuated.The inner surface of the outer surface of radiating subassembly 714 and condensation chamber 706 can be coated with the inertia Heat Conduction Material, as heat-conducting plastic, thermal conductive ceramic etc.; The inner surface of vaporization chamber 705 and conduit 708 can plate thermal insulation material such as polytetrafluoroethylene etc.; Phase transformation working media 707 should adopt the organic or inorganic solution that thermal capacitance is big, latent heat of phase change is big, as lithium-bromide solution, water, ethanol etc., and the blending agent that two or more the cooling work medium of also can serving as reasons is formed; Can be selected the high materials of thermal conductivity such as indium foil, heat-conducting silicone grease, gold or silver by the Heat Conduction Material 702 that heat dissipation element 701 outsides are coated with; The entire heat dissipation device is removed other outer outsides of radiating end and all is coated with heat-barrier material, as polyurethane, when guaranteeing whole device busy not can with environment generation heat exchange, guarantee efficient.When the phase transformation working media that uses can produce corrosiveness to outer wall surface, vaporization chamber surface, catheter surface and the condensation chamber surfacing of radiating subassembly, then need be on the device surface that may corrode plates or sprays the little anticorrosive layer of thermal resistance.In addition, phase transformation can be gas-liquid phase transition, also can be the gas-solid phase transformation.
In order to control the temperature in the condensation chamber, can also use the refrigerant compressor equal controller to replace semiconductor refrigeration chip, the application of perhaps adopting semiconductor refrigeration chip to combine with refrigerant compressor, control the temperature in condensation chamber and the vaporization chamber, thereby control the boiling point of phase transformation working media accurately, reach accurate control by the purpose of heat dissipation element working temperature.On conduit, can also be provided with the shutoff valve of gas or liquid, be used to control the pressure difference between vaporization chamber and the condensation chamber.In addition, can also use as adding modes such as liquid circulation cooling or conventional air cooling.
Above-mentioned heat abstractor is when work, at first, block laser crystal is wrapped up with goldleaf, again being enclosed with laser crystal surface plating one deck indium film of goldleaf, so that the better heat conduction of laser crystal, the assembly that will absorb heat is opened from the centre, by shown in Figure 4 laser crystal is put into the heat absorption assembly, the shape of heat absorption assembly internal cavity should just in time embed laser crystal according to laser crystal amount body system, heat absorption assembly inwall contacts fully with the laser crystal surface, thereby makes heat-conducting effect the best.Wherein, the material of heat absorption assembly can be difficult for the Heat Conduction Material of oxidation for aluminium alloy etc.At the outer surface of heat absorption assembly and the inner surface plated with gold film of radiating subassembly, the heat absorption assembly that then inside is equipped with laser crystal is packed in the radiating subassembly, the interface at heat absorption assembly top can be connected with other optical elements in the light path and light beam is passed through, heat absorption assembly bottom is provided with trim ring, under the extruding of trim ring, make between heat absorption assembly and the laser crystal, and between the inwall of radiating subassembly and the heat absorption assembly outer wall, remain certain stress, improve thermo-contact each other.The spacing of the radiating fin on the radiating subassembly is 0.3 millimeter, highly is 2 millimeters.These fins can constitute micro capillary groove evaporator.Radiating subassembly is positioned in the vaporization chamber, in vaporization chamber, injects lithium bromide water solution as the phase transformation working media.Like this, radiating subassembly all is immersed in the solution, to realize thermo-contact completely.The top of vaporization chamber has a plurality of conduits to be connected with condensation chamber.The fin of the top radiating end of condensation chamber is also made the fin shape, and fin is high 4 millimeters, 3 millimeters of spacings, and fin structure is still in order to increase area of dissipation and to strengthen radiating effect.Mid portion at condensation chamber is provided with an insulating portion, is used to prevent the interference that comes from the outside, and many conduits in the both sides of insulating portion are highways of steam and liquid, are used for carrying out the phase transformation circulation.The condensation chamber top is close together by the cold junction outer surface of heat conductive silica gel or silicone grease 711 and semiconductor refrigeration chip, and the hot junction outer surface of semiconductor refrigeration chip then also is close together by heat conductive silica gel or silicone grease with an air-cooled aluminum alloy heat sink.Above-mentioned heat conductive silica gel also can adopt metal to replace.All the other outer surfaces except that radiating end all by bag with the polyurethane heat-barrier material of 1 cm thick, to guarantee this cover system when the work, not can with environment generation heat exchange, guarantee efficient.Lithium bromide water solution is a kind of liquid-working-medium with higher latent heat of vaporization, radiating subassembly is fully immersed in the lithium bromide water solution, thereby form high-intensity evaporation and boiling in the phase transformation heating region that radiating fin constituted, aqueous solvent becomes steam to take away the part heat that laser crystal produces.After part water was evaporated with vapor form, the concentration of the lithium-bromide solution in the microflute group that radiating fin constituted rose, and becomes bromize lithium concentrated solution.Cooled liquid water is dropped in the formed phase transformation of the fin thermal treatment zone because gravity flows back in the vaporization chamber by conduit, bromize lithium concentrated solution is produced diluting effect, thereby take away the part heat again.
In above-mentioned phase-change radiation system, it is better than structure shown in Figure 3 that block laser crystal in the heat absorption assembly adopts mode shown in Figure 4 to place, and reason is to place optical element in mode shown in Figure 4, and optical element is stressed more even, it is littler to be subjected to external action, and system has more stability.
For end-pumped laser, temperature control precision is required height and different fiducial temperatures need be arranged, if the employing phase transformation type of cooling is cooled off optical elements such as the laser crystal in the laser, nonlinear optical crystal, semiconductor laser chips then is very suitable.
Compare with traditional laser component radiating mode, phase transformation working media in the vaporization chamber of this kind phase-change cooling device can soak the heat conduction end that inner chamber is equipped with optical element or half soak, the realization radiating subassembly fully contacts with the phase transformation working media, guaranteed Homogeneouslly-radiating to optical element, thereby make laser obtain good consistency, improve whole lighting efficiency, optical output power and the working life of laser.When in same phase transformation vaporization chamber, arranging the heat conduction end that optical element is equipped with in a plurality of inside in a certain order, as shown in figure 10, when constituting laser array, then can make laser concentrate heat radiation, make the overall volume of laser reduce, optical output power strengthens.And this phase-change heat mode does not need to install the cooling work medium drive device in addition additional, makes that the volume of entire heat dissipation system is littler, and manufacturing cost is cheaper, and structure is more reliable.Be particularly suitable for all solid laser and large-power semiconductor laser, also can be applicable under the abominable condition of work such as airborne, military semiconductor laser and solid state laser with simple heat exchange pattern work as the high power pumping source.
Because the heat dissipation problem of optical elements such as laser crystal and semiconductor laser chip, the power output of common high power laser can only reach several watts, and use above-mentioned phase-change heat radiating device shown in Figure 9, under volume that does not change laser and condition of cost, the power output of laser can reach hectowatt, realized the leap of laser output power, and because radiating efficiency height, optical crystal is remained under the lower temperature, luminous efficiency and working life have been improved, this shows, phase-change heat radiating device of the present utility model is an a kind of powerful phase-change heat mechanism, to improving laser crystal, nonlinear optical crystal, the heat dissipation problem of optical elements such as semiconductor laser chip, especially the heat dissipation problem of high power laser and improve the luminous efficiency of optical crystal, working life has obvious improvement, thereby can access the laser output of high light beam quality.
Above-mentioned structure can be used for single optical element, and the perhaps array of same optical element also can place same heat abstractor with several optical elements of the needs heat radiation that links to each other before and after in same light path, concentrates heat radiation.
In conjunction with specific embodiments the technical solution of the utility model detailed description and interpretation have been carried out above; those skilled in the art is to be understood that; the foregoing description is not the restriction to the utility model protection range, and protection range of the present utility model is as the criterion with claim.
Claims (11)
1. a phase-change heat radiating device is characterized in that, comprises vaporization chamber and condensation chamber, and is used for being conducted to the heat conduction end of vaporization chamber by the heat that the object that dispels the heat sends, and described heat conduction end comprises the heat absorption assembly, and described heat absorption assembly is coated on by around the heat radiation object.
2. phase-change heat radiating device according to claim 1 is characterized in that, described heat conduction end also comprises radiating subassembly, and the phase transformation working media is housed in the described vaporization chamber, and at least a portion of described radiating subassembly is soaked in the described phase transformation working media.
3. phase-change heat radiating device according to claim 1 is characterized in that, also comprises the temperature control equipment that is used to control the condensation chamber temperature.
4. phase-change heat radiating device according to claim 1 is characterized in that, described temperature control equipment is semiconductor refrigeration chip or refrigerant compressor or both combinations.
5. phase-change heat radiating device according to claim 1 is characterized in that, described condensation chamber is connected by at least one conduit with described vaporization chamber, and described conduit is provided with shutoff valve.
6. phase-change heat radiating device according to claim 1 is characterized in that, described radiating subassembly outer surface is provided with radiating fin.
7. phase-change heat radiating device according to claim 1 is characterized in that, described heat absorption components side section is wedge shape or rectangle.
8. a laser is characterized in that, comprises heater element and the heat abstractor that is used to reduce temperature of heating elements, and described heat abstractor is the described phase-change heat radiating device of claim 1-7.
9. laser according to claim 8 is characterized in that, described heater element is laser crystal, semiconductor laser chip and nonlinear optical crystal.
10. a laser array is characterized in that, comprises heater element and the heat abstractor that is used to reduce temperature of heating elements, and described heat abstractor is the described phase-change heat radiating device of claim 1-7.
11. laser array according to claim 10 is characterized in that, described heater element is laser crystal, semiconductor laser chip and nonlinear optical crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNU2007201910917U CN201260024Y (en) | 2007-12-29 | 2007-12-29 | Phase changing heat radiating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2007201910917U CN201260024Y (en) | 2007-12-29 | 2007-12-29 | Phase changing heat radiating device |
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| CN201260024Y true CN201260024Y (en) | 2009-06-17 |
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| CNU2007201910917U Expired - Fee Related CN201260024Y (en) | 2007-12-29 | 2007-12-29 | Phase changing heat radiating device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105891692A (en) * | 2016-02-23 | 2016-08-24 | 青岛海信宽带多媒体技术有限公司 | Laser chip P-I curve kink test method and device |
| CN105892517A (en) * | 2015-01-26 | 2016-08-24 | 中国科学院宁波材料技术与工程研究所 | Temperature control system |
| CN107104360A (en) * | 2017-07-13 | 2017-08-29 | 重庆师范大学 | The micro- sweat cooling of large power laser diode array throttling is heat sink |
| CN108258936A (en) * | 2018-03-15 | 2018-07-06 | 南京紫晶藤节能科技有限公司 | Thermo-electric generation system and electricity-generating method based on phase-change heat transfer |
| CN112234412A (en) * | 2020-10-26 | 2021-01-15 | 苏州英谷激光有限公司 | Device for accurately controlling temperature of laser crystal |
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2007
- 2007-12-29 CN CNU2007201910917U patent/CN201260024Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105892517A (en) * | 2015-01-26 | 2016-08-24 | 中国科学院宁波材料技术与工程研究所 | Temperature control system |
| CN105891692A (en) * | 2016-02-23 | 2016-08-24 | 青岛海信宽带多媒体技术有限公司 | Laser chip P-I curve kink test method and device |
| CN105891692B (en) * | 2016-02-23 | 2019-01-01 | 青岛海信宽带多媒体技术有限公司 | A kind of laser chip P-I kink of a curve test method and device |
| CN107104360A (en) * | 2017-07-13 | 2017-08-29 | 重庆师范大学 | The micro- sweat cooling of large power laser diode array throttling is heat sink |
| CN107104360B (en) * | 2017-07-13 | 2019-06-07 | 重庆师范大学 | The micro- sweat cooling of large power laser diode array throttling is heat sink |
| CN108258936A (en) * | 2018-03-15 | 2018-07-06 | 南京紫晶藤节能科技有限公司 | Thermo-electric generation system and electricity-generating method based on phase-change heat transfer |
| CN112234412A (en) * | 2020-10-26 | 2021-01-15 | 苏州英谷激光有限公司 | Device for accurately controlling temperature of laser crystal |
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