CN201256288Y - Bias protection device and circuit for avalanche photo diode - Google Patents
Bias protection device and circuit for avalanche photo diode Download PDFInfo
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- CN201256288Y CN201256288Y CNU2008201173258U CN200820117325U CN201256288Y CN 201256288 Y CN201256288 Y CN 201256288Y CN U2008201173258 U CNU2008201173258 U CN U2008201173258U CN 200820117325 U CN200820117325 U CN 200820117325U CN 201256288 Y CN201256288 Y CN 201256288Y
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- apd
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Abstract
The utility model discloses an avalanche photodiode bias voltage protection device and a circuit, wherein the avalanche photodiode bias voltage protection device comprises a power supply unit and an avalanche photodiode, and further comprises a feedback portion, wherein the input end of the feedback portion is connected with the output end of the power supply unit, the first output end of the feedback portion is connected to the input end of the power supply unit, and the second output end of the feedback portion is connected to the input end of an APD. The avalanche photodiode bias voltage protection device prevents a tube core of an avalanche photodiode diode from being brunt off through providing bias voltage overload protection to the avalanche photodiode diode, improves the security of an avalanche photodiode diode receiver, and lowers maintenance cost.
Description
Technical field
The utility model relates to avalanche photodide (Avalanche Photon Diode abbreviates APD as) field, more specifically, relates to a kind of APD bias voltage protective device and circuit.
Background technology
In the communicating circuit, generally adopt APD as the light signal receiving element.APD is the high sensitivity photodetector that utilizes the avalanche multiplication effect to make photoelectric current obtain doubling.APD needs high reverse biased when work, it is higher bias voltage, thereby at high electric field region of the inner formation of PN junction, the electron-hole pair of photoproduction is accelerated in high electric field region, obtain enough energy, and in high-speed motion with lattice on atom bump, make the atomic ionization in the lattice, constantly produce new electron-hole pair, it is right to be called secondary electron-hole, secondary electron-hole is to being accelerated again through too high electric field region the time, and the atom that may collide again in the lattice makes it produce ionisation effect, inspires more electron-hole pair, like this through the result of repeatedly collision-ionization-more electron hole pair-accelerated motion-ionization by collision, APD device inside charge carrier number is increased sharply, and reverse current strengthens rapidly, forms avalanche effect.Suitable bias voltage is the necessary condition of APD device generation avalanche effect.
Simultaneously, guarantee the APD operate as normal and have higher sensitivity that photogenerated current just can not be excessive, otherwise can burn.The input optical power of APD receiver and multiplication constant all can influence the size of photogenerated current.When the input optical power of receiver was big, the photogenerated current of generation also can be bigger; Even input optical power is certain, variations in temperature also might cause photogenerated current owing to the increase of multiplication constant exceeds threshold value.Fig. 1 is the relation curve that the gain coefficient of a typical A PD photodetector changes with temperature and reverse biased.As shown in Figure 1, when reverse biased increased, gain coefficient increased; And when temperature when 23 ℃ are brought up to 100 ℃, under certain reverse biased effect, gain coefficient M value descends.
So input optical power is excessive all may to cause the APD tube core to burn with variations in temperature, therefore, need effectively protect APD.In addition, the price of APD is comparatively expensive, and its damage can improve the maintenance cost of whole APD circuit.
The utility model content
In order to overcome in the prior art the deficiency of APD overcurrent protection, the utility model provides a kind of APD bias voltage protective device and circuit.
According to the one side of the utility model embodiment, a kind of avalanche photodide bias voltage protective device is provided, comprise power supply unit and avalanche photodide, also comprise feedback section, wherein, the input of feedback section is connected to the output of power supply unit; First output of feedback section is connected to the input of power supply unit; Second output of feedback section is connected to the input of APD.
Preferably, above-mentioned feedback section comprises sampling resistor, current monitoring unit and decision-feedback unit; Wherein, first end of sampling resistor is connected to the input of power supply unit and current monitoring unit respectively; Second end of sampling resistor is connected to the input of avalanche photodide and current monitoring unit respectively; The output of current monitoring unit is connected to the input of decision-feedback unit; The output of decision-feedback unit is connected to the input of power supply unit.
Preferably, above-mentioned power supply unit is DC circuit unit or DC voltage booster circuit unit, and has second input.
Preferably, described avalanche photodide bias voltage protective device, comprise: DC/DC booster circuit unit, sampling resistor, current monitoring unit, avalanche photodide, decision-feedback unit, wherein, sampling resistor is connected between the input of the output of DC/DC booster circuit and avalanche photodide; The two ends of sampling resistor are connected to the current monitoring unit respectively; The output of current monitoring unit is connected to the input of decision-feedback unit, and the output of decision-feedback unit is connected to DC/DC booster circuit unit.
Technique scheme has the following advantages or beneficial effect: by providing overload protection to APD receiver bias voltage, thereby prevent that the APD tube core from burning, improving the fail safe of APD receiver, reducing maintenance cost.
Other features and advantages of the utility model will be set forth in the following description, and, partly from specification, become apparent, perhaps understand by implementing the utility model.The purpose of this utility model and other advantages can realize and obtain by specifically noted structure in the specification of being write, claims and accompanying drawing.
Description of drawings
Accompanying drawing is used to provide further understanding of the present utility model, and constitutes the part of specification, is used from explanation the utility model with embodiment one of the present utility model, does not constitute restriction of the present utility model.In the accompanying drawings:
Fig. 1 is the temperature variant curve chart of avalanche gain coefficient according to a kind of typical APD photodetector of prior art;
Fig. 2 is the structural representation according to the APD bias voltage protective device of the utility model embodiment;
Fig. 3 is the structured flowchart according to the APD bias voltage protective device of the utility model embodiment;
Fig. 4 is according to control end voltage V in the APD biasing circuit of the utility model embodiment
ControlWith output voltage V
APDGraph of a relation.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present utility model is described, should be appreciated that preferred embodiment described herein only is used for description and interpretation the utility model, and be not used in qualification the utility model.
Fig. 2 is the structural representation according to the APD bias voltage protective device of the utility model embodiment.As shown in Figure 2, this APD bias voltage protective device comprises power supply unit 2, APD 4 and feedback section 6, and wherein, the input of feedback section 6 is connected to the output of power supply unit; First output of feedback section 6 is connected to the input of power supply unit; Second output of feedback section 6 is connected to the input of APD.APD is operated under the proper state and guarantees the performance of APD receiver module, must carry out FEEDBACK CONTROL the APD reverse bias voltage.This feedback section 6 can provide the self adaptation feedback protection to APD receiver bias voltage by the variation of monitoring photogenerated current, thereby guarantees that 2 couples of APD 4 of power supply unit provide suitable bias voltage.
Fig. 3 is the structured flowchart according to the APD bias voltage protective device of the utility model embodiment.As shown in Figure 3, above-mentioned feedback section also comprises sampling resistor 62, current monitoring unit 64 and decision-feedback unit 66; Wherein, first end of sampling resistor R 62 is connected to the input of power supply unit 2 and current monitoring unit 64 respectively; Second end of sampling resistor R 62 is connected to the input of APD 4 and current monitoring unit 64 respectively; The output of current monitoring unit 64 is connected to the input of decision-feedback unit 66; The output of decision-feedback unit 66 is connected to the input of power supply unit 2.Magnitude of voltage on this sampling resistor R 62 is directly proportional with the size of photogenerated current.This magnitude of voltage can amplify through the precision instrument amplifier in the current monitoring unit 64, utilizes the linear approximate relationship that detects voltage and input optical power in the APD input optical power dynamic range to detect the high low signal V of APD input optical power
Control. testing result is judged by decision-feedback unit 66, correspondingly adjusts signal V
ControlVoltage to change reverse biased V
APDThereby, realize self adaptation bias voltage protection to APD.
Wherein, above-mentioned power supply unit 2 can be DC circuit unit or DC voltage booster circuit unit (abbreviating DC/DC booster circuit unit as), and has second input that input voltage vin is inserted.
Need to prove that above-mentioned APD bias voltage protective device can be realized with APD bias voltage protective circuit.To those skilled in the art, based on above-mentioned APD bias voltage protective device, can easily realize APD bias voltage protective circuit, so do not repeat them here.
In conjunction with Fig. 3, can carry out following description to the workflow of the protective device of the utility model embodiment:
DC/DC booster circuit unit 2 transforms to the required high reverse biased V of APD 4 with input voltage vin
APDV
APDVoltage output is after over-sampling resistance R 62, the magnitude of voltage at sampling resistor R 62 two ends and photogenerated current big or small proportional, so current monitoring unit 64 can utilize the monitoring of sampling resistor R 62 realizations of precision to the photogenerated current size.Be provided with accurate instrument amplifier in the current monitoring unit 64, can utilize the linear approximate relationship that detects voltage and input optical power in the APD input optical power dynamic range to detect the size of APD input optical power.Monitoring result is judged by decision-feedback unit 66, if input optical power increases or owing to the variations in temperature reason causes the photogenerated current increase, then decision-feedback unit 66 improves control end voltage V rapidly
ControlThereby to high reverse biased V
APDAdjust.Through adjusting the output voltage V that DC/DC booster circuit unit 2 provides
APDWill reduce rapidly.Suitable bias voltage is the necessary condition of APD device generation avalanche effect.Work as V
APDTo such an extent as to when too small APD can't produce avalanche effect, the photogenerated current that APD produces was very little, even has only very little dark current.Even at this moment APD receives very big input optical power, can not produce very big photoelectric current yet, so just avoided the APD tube core to burn, thereby realized self adaptation bias voltage protection the APD receiver.And the excessive or variations in temperature of input current causes the excessive equal of photogenerated current to realize adaptive guard by this method.
Fig. 4 is according to control end voltage V in the APD biasing circuit of the utility model embodiment
ControlWith output voltage V
APDGraph of a relation.As shown in Figure 4, ideally, control end voltage V
ControlWhen between 0～2.5V, changing, output voltage V
APDBetween 8V～91V, change.Need to regulate output voltage V
APDDuring size, as long as regulate the control end output voltage V
ControlGet final product, such as, if want V
APDIncrease, then reduce V
Control, vice versa.
Adopt experimental technique to verify the validity of above-mentioned safeguard measure below.
Experimental provision has: the sample that the APD receiving device adopts Oki to provide, and 10Gb/s, model is OF3242N, avalanche voltage V
B=25.7V (25 ℃); In addition, the APD receiving device of also having selected for use Multiplex to provide, model is MRP10N5, avalanche voltage V
B=27V (25 ℃).The unified Santec tunable laser that adopts of light source, output wavelength and average power are all adjustable, maximum Output optical power+20dBm.
Stronger luminous power is input in the APD bias voltage protective device that adopts the utility model embodiment; the APD receiver is in power-up state; APD device from different suppliers carried out after 10～60 minutes the high light incident measurement sensitivity and overload point again; the result shows that the receiving sensitivity of APD receiver module and overload point are without any change; and the APD receiver of APD bias voltage protective device that does not adopt the utility model embodiment is in the luminous power of injecting during greater than 0dBm, and the APD device can very fast damage.Test data of experiment is as shown in table 1.
Experimental result shows, adopts the APD bias voltage protective device of the utility model embodiment to provide excellent protection for the APD receiver, and the APD receiver is also no longer damaged under the high light condition.
Need to prove that in view of the basic principle of APD photodetector and the general character of material aspect, although the APD receiver of 10Gb/s is adopted in experiment, this protective circuit is effective equally for the APD receiver of other speed, just the resistance of resistance is according to avalanche voltage V
BSize calculate.
In sum, the utility model embodiment has the following advantages or beneficial effect: by providing overload protection to APD receiver bias voltage, thereby prevent that the APD tube core from burning, improving the fail safe of APD receiver, reducing maintenance cost.
The above is a preferred embodiment of the present utility model only, is not limited to the utility model, and for a person skilled in the art, the utility model can have various changes and variation.All within spirit of the present utility model and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (4)
1. an avalanche photodide bias voltage protective device comprises power supply unit and avalanche photodide, it is characterized in that, described avalanche photodide bias voltage protective device also comprises feedback section, wherein,
The input of described feedback section is connected to the output of described power supply unit;
First output of described feedback section is connected to the input of described power supply unit;
Second output of described feedback section is connected to the input of described avalanche photodide.
2. device according to claim 1 is characterized in that, described feedback section comprises sampling resistor, current monitoring unit and decision-feedback unit; Wherein,
First end of described sampling resistor is connected to the input of described power supply unit and current monitoring unit respectively;
Second end of described sampling resistor is connected to the input of described avalanche photodide and described current monitoring unit respectively;
The output of described current monitoring unit is connected to the input of described decision-feedback unit;
The output of described decision-feedback unit is connected to the input of described power supply unit.
3. device according to claim 1 and 2 is characterized in that, described power supply unit is DC circuit unit or DC voltage booster circuit unit, and has second input.
4. device according to claim 1 is characterized in that, comprising:
DC/DC booster circuit unit, sampling resistor, current monitoring unit, avalanche photodide, decision-feedback unit, wherein,
Described sampling resistor is connected between the input of the output of described DC/DC booster circuit and described avalanche photodide;
The two ends of described sampling resistor are connected to described current monitoring unit respectively;
The output of described current monitoring unit is connected to the input of described decision-feedback unit, and the output of described decision-feedback unit is connected to described DC/DC booster circuit unit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201173258U CN201256288Y (en) | 2008-06-04 | 2008-06-04 | Bias protection device and circuit for avalanche photo diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201173258U CN201256288Y (en) | 2008-06-04 | 2008-06-04 | Bias protection device and circuit for avalanche photo diode |
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| CN201256288Y true CN201256288Y (en) | 2009-06-10 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105743340A (en) * | 2014-12-10 | 2016-07-06 | 瑞昱半导体股份有限公司 | Bias voltage generation circuit for avalanche photodiode and correlated control circuit |
| CN106033225A (en) * | 2015-03-16 | 2016-10-19 | 苏州旭创科技有限公司 | Low-power consumption APD bias controller, bias control method, and photoelectric receiver |
| CN106786453A (en) * | 2016-12-07 | 2017-05-31 | 深圳市共进电子股份有限公司 | A kind of optical module APD protection circuits |
| CN107204811A (en) * | 2016-11-18 | 2017-09-26 | 索尔思光电（成都）有限公司 | The method of photodetector in optical receiver, the optical transceiver comprising it, and protection optical receiver |
| CN110289600A (en) * | 2019-07-04 | 2019-09-27 | 武汉光迅科技股份有限公司 | A kind of optical module APD protective device and guard method |
-
2008
- 2008-06-04 CN CNU2008201173258U patent/CN201256288Y/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105743340A (en) * | 2014-12-10 | 2016-07-06 | 瑞昱半导体股份有限公司 | Bias voltage generation circuit for avalanche photodiode and correlated control circuit |
| CN105743340B (en) * | 2014-12-10 | 2019-01-11 | 瑞昱半导体股份有限公司 | The bias generating circuit of avalanche photodide and relevant control circuit |
| CN106033225A (en) * | 2015-03-16 | 2016-10-19 | 苏州旭创科技有限公司 | Low-power consumption APD bias controller, bias control method, and photoelectric receiver |
| CN106033225B (en) * | 2015-03-16 | 2017-08-25 | 苏州旭创科技有限公司 | Low-power consumption APD substrate bias controllers and bias control method and photelectric receiver |
| US10193635B2 (en) | 2015-03-16 | 2019-01-29 | Innolight Technology (Suzhou) Ltd. | Low-power APD bias controller, bias control method, and photoelectric receiver |
| CN107204811A (en) * | 2016-11-18 | 2017-09-26 | 索尔思光电（成都）有限公司 | The method of photodetector in optical receiver, the optical transceiver comprising it, and protection optical receiver |
| WO2018090337A1 (en) * | 2016-11-18 | 2018-05-24 | Source Photonics (Chengdu) Company Limited | Optical receiver, optical transceiver comprising the same, and method of protecting a photodetector in the optical receiver |
| US10305605B2 (en) | 2016-11-18 | 2019-05-28 | Source Photonics (Chengdu) Co., Ltd. | Optical receiver, optical transceiver comprising the same, and method of protecting a photodetector in the optical receiver with a transient event or a transient state determination |
| CN106786453A (en) * | 2016-12-07 | 2017-05-31 | 深圳市共进电子股份有限公司 | A kind of optical module APD protection circuits |
| CN106786453B (en) * | 2016-12-07 | 2019-09-17 | 深圳市共进电子股份有限公司 | A kind of optical module APD protection circuit |
| CN110289600A (en) * | 2019-07-04 | 2019-09-27 | 武汉光迅科技股份有限公司 | A kind of optical module APD protective device and guard method |
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Granted publication date: 20090610 |