CN113315583B - Protection circuit of APD detector in optical module and optical module - Google Patents

Protection circuit of APD detector in optical module and optical module Download PDF

Info

Publication number
CN113315583B
CN113315583B CN202110862012.5A CN202110862012A CN113315583B CN 113315583 B CN113315583 B CN 113315583B CN 202110862012 A CN202110862012 A CN 202110862012A CN 113315583 B CN113315583 B CN 113315583B
Authority
CN
China
Prior art keywords
circuit
apd
voltage
optical module
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110862012.5A
Other languages
Chinese (zh)
Other versions
CN113315583A (en
Inventor
刘能
蒋昌明
魏志坚
郑波
过开甲
孙鼎
张伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangxi Sont Communication Technology Co ltd
Shenzhen Xunte Communication Technology Co ltd
Original Assignee
Jiangxi Sont Communication Technology Co ltd
Shenzhen Xunte Communication Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangxi Sont Communication Technology Co ltd, Shenzhen Xunte Communication Technology Co ltd filed Critical Jiangxi Sont Communication Technology Co ltd
Priority to CN202110862012.5A priority Critical patent/CN113315583B/en
Publication of CN113315583A publication Critical patent/CN113315583A/en
Application granted granted Critical
Publication of CN113315583B publication Critical patent/CN113315583B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/69Electrical arrangements in the receiver
    • H04B10/691Arrangements for optimizing the photodetector in the receiver
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60Receivers
    • H04B10/66Non-coherent receivers, e.g. using direct detection
    • H04B10/69Electrical arrangements in the receiver
    • H04B10/691Arrangements for optimizing the photodetector in the receiver
    • H04B10/6911Photodiode bias control, e.g. for compensating temperature variations

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)

Abstract

The invention relates to a protection circuit of an APD detector in an optical module and the optical module, wherein the protection circuit is used in the optical module of more than 25G, and comprises: the follow current circuit assembly is positioned in the slow starting circuit and used for continuously supplying power to the TIA when the optical module is powered off, so that the power-off time of the APD detector is earlier than the power-off time of the TIA power supply voltage; the voltage monitoring circuit comprises an MCU control circuit, a power switch combination circuit and an APD booster circuit; when the optical module is electrified, the MCU control circuit controls and enables the power switch combination circuit, the APD booster circuit is enabled to work normally, then APD voltage is provided for the APD detector, and meanwhile the electrifying time of the APD detector is made to be later than that of TIA power voltage in the optical module. The structure realizes that the APD detector provides protection for the APD detector in the power-on time sequence and the power-off time sequence, simultaneously realizes the function of monitoring the APD booster circuit in real time by the MCU, and prevents abnormal APD voltage from being provided for the APD detector.

Description

Protection circuit of APD detector in optical module and optical module
Technical Field
The invention relates to the technical field of optical communication, in particular to a protection circuit of an APD detector in an optical module and the optical module.
Background
A photodetector is a device that converts an optical signal into an electrical signal. In a semiconductor photodetector, a photon-generated carrier excited by incident photons enters an external circuit under an external bias voltage to form a measurable photocurrent. Even at the maximum responsivity, a PIN photodiode can only generate one electron-hole pair at most by one photon, and is a device without internal gain. For greater responsivity, Avalanche Photodiodes (APDs) may be employed. The amplification effect of APD on photocurrent is based on ionization collision effect, under certain conditions, accelerated electrons and holes gain enough energy to collide with lattice to generate a new pair of electron-hole pairs, which is a chain reaction, so that the pair of electron-hole pairs generated by light absorption can generate a large amount of electron-hole pairs to form a large secondary photocurrent. The APD therefore has a high responsivity and internal gain that improves the signal-to-noise ratio of the device. APDs will find application primarily in optical fiber communication systems over long distances or where the received optical power is otherwise limited and small.
However, in the specific optical module application or optical module manufacturing process, the detector is prone to fail due to APD voltage overvoltage, because the module is repeatedly powered off and powered on, a program runs wrongly, power supply voltage surge, APD voltage debugging mistakes and the like.
Therefore, a circuit for protecting the APD detector in the optical module is needed.
Disclosure of Invention
Technical problem to be solved
In view of the above-mentioned drawbacks and deficiencies of the prior art, the present invention provides a protection circuit for an APD detector in an optical module and an optical module.
(II) technical scheme
In order to achieve the purpose, the invention adopts the main technical scheme that:
in a first aspect, an embodiment of the present invention provides a protection circuit for an APD detector in an optical module, where the protection circuit is used in an optical module of 25G or more, and the protection circuit includes:
the follow current circuit component is positioned in the slow starting circuit of the optical module and used for continuously supplying power to the TIA of the optical module when the optical module is powered off, so that the power-off time of the APD detector is earlier than the power-off time of the TIA power supply voltage in the optical module;
the voltage monitoring circuit comprises an MCU control circuit, a power switch combination circuit and an APD booster circuit; the MCU control circuit is connected with and controls the power switch combination circuit and the voltage monitoring circuit;
when the optical module is powered on, the MCU control circuit enables the power switch combination circuit to enable the TIA and the APD booster circuit of the optical module to be powered on, whether the voltage output by the APD booster circuit is matched with the voltage of the current APD detector at the temperature is determined by means of the voltage monitoring circuit, if the voltage output by the APD booster circuit is matched with the voltage of the current APD detector at the temperature, the APD booster circuit provides the voltage for the APD detector through the power switch combination circuit, and the power-on time of the APD detector is later than the power-on time of the power voltage in the optical module.
Optionally, the freewheel circuit assembly comprises: an energy storage inductor L1;
the energy storage inductor L1 is arranged between the first triode PMOSQ1 of the slow starting circuit and the filter capacitor C1.
Optionally, the power switch combination circuit comprises:
a third PMOS component, a fourth triode component and an enabling switch component;
the input end of the third PMOS component is connected with the voltage output end of the APD booster circuit, and the output end of the third PMOS component is connected with the voltage input end of the APD detector;
the control end of the fourth triode component is connected with an APD voltage supply control pin of the MCU control circuit;
the output end of the fourth triode component is connected with the control end of the third PMOS component;
an enabling end of the enabling switch assembly receives a signal of a TIA power supply control pin of the MCU control circuit to close so that the TIA is powered on;
the input end of the enable switch is connected with the output end of the energy storage inductor L1, namely the port connected with the filter capacitor C1.
Optionally, the voltage monitoring circuit is a closed-loop feedback control circuit, one end of the voltage monitoring circuit is used for sampling a voltage output end of a boost chip in the APD boost circuit, and the other end of the voltage monitoring circuit is connected with a voltage monitoring pin of the MCU control circuit.
Optionally, a wired and functional component is arranged between the control end of the fourth triode component and the APD voltage supply control pin of the MCU control circuit;
the line and function assembly includes: a twelfth resistor R12 and a second diode D2 for pulling low when the slow start circuit is powered down; one end of the twelfth resistor R12 is connected to the APD voltage supply control pin, and the other end is connected to the control end of the fourth triode component and the anode of the second diode D2;
the cathode of the second diode D2 is connected to the source of the first triode PMOS Q1 to be reversely conducted and pulled down when the light module is powered down or pulled out.
In a second aspect, an embodiment of the present invention further provides an operating method of an APD detector based on the protection circuit in any one of the first aspect, including:
when the optical module is powered on, a slow starting circuit of the protection circuit is conducted, and the MCU control circuit operates;
the MCU control circuit enables the power switch combined circuit to electrify the TIA of the optical module and controls the electrifying time sequence of the APD booster circuit;
the MCU control circuit determines whether the voltage output by the APD booster circuit is matched with the voltage under the temperature of the current APD detector by means of a voltage monitoring circuit;
and if the APD detector is matched with the optical module, the APD booster circuit provides working voltage for the APD detector through the power switch combined circuit, and the power-on time of the APD detector is later than that of the power voltage in the optical module.
Optionally, the method further comprises: when the optical module is powered off or pulled out, the slow starting circuit, the MCU control circuit and the APD booster circuit are powered off, and the APD detector is powered off in advance;
the follow current circuit component of the slow start circuit continuously supplies power to the TIA of the optical module and other circuits in the optical module based on the electric energy stored in the slow start circuit, the second diode D2 is reversely conducted to turn off the fourth triode, and the third PMOS is disconnected, so that the power-off time of the APD detector is earlier than the power-off time of the power supply voltage in the optical module.
Optionally, the MCU control circuit determines, by means of a voltage monitoring circuit, whether the voltage output by the APD boost circuit matches the voltage at the current temperature of the APD detector, including:
the MCU control circuit receives the output voltage value of the APD booster circuit fed back by the voltage monitoring circuit in real time;
the MCU control circuit receives the operating temperature of the APD detector in real time;
and judging whether the output voltage value of the APD booster circuit is matched with the operating temperature or not according to a preset APD temperature compensation lookup table.
Optionally, the method further comprises:
and the MCU control circuit sends a control signal of a voltage value to be output to the APD booster circuit based on the APD temperature compensation lookup table and the operating temperature so as to enable the APD detector to operate in a proper power supply voltage interval.
In a third aspect, an embodiment of the present invention further provides an optical module, including the protection circuit of the APD detector in the optical module according to any of the first aspects, where the protection circuit is used to protect the APD detector during power-on and power-off of the optical module.
(III) advantageous effects
The protection circuit can realize the protection of the APD detector in the power-on and power-off processes of the optical module through the APD power-on time sequence and the power-off time sequence, reduces the jitter of signals and the impact of power supply voltage surge current, and simultaneously ensures the service life of the APD detector.
Drawings
Fig. 1 is a schematic structural diagram of a protection circuit of an APD detector in an optical module according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of the slow start freewheeling circuit in FIG. 1;
FIG. 3 is a schematic diagram of the APD booster circuit and its voltage monitoring circuit shown in FIG. 1;
FIG. 4 is a schematic diagram of the power switch assembly circuit of FIG. 1;
FIG. 5 is a schematic diagram of the MCU control circuit in FIG. 1;
FIG. 6 is a schematic structural diagram of a protection circuit of an APD detector according to an embodiment of the present invention;
fig. 7 is a schematic flowchart of an operation method of an APD detector according to an embodiment of the present invention.
Description of reference numerals:
an energy storage inductor L1;
a first PMOS Q1; a third PMOS Q3; a fourth transistor Q4; a second diode D2;
a filter capacitor C1;
slowly starting an input end VIN of the continuous current circuit; enable switch component SW 2;
a first resistor R1; a second resistor R2; a third resistor R3; a fourth resistor R4; a fifth resistor R5; a sixth resistor R6; a seventh resistor R7; a tenth resistor R10; an eleventh resistor R11; a twelfth resistor R12.
Detailed Description
For the purpose of better explaining the present invention and to facilitate understanding, the present invention will be described in detail by way of specific embodiments with reference to the accompanying drawings.
As shown in fig. 1, a schematic structural diagram of a protection circuit of an APD detector in an optical module of this embodiment is mainly used in an optical module of 25G or more, and the protection circuit of this embodiment may include: the voltage monitoring circuit comprises a slow start follow current circuit, an MCU control circuit, a power switch combination circuit and an APD booster circuit;
the slow start freewheeling circuit of the embodiment is mainly an improvement of an existing slow start circuit, and a freewheeling circuit component is arranged in the slow start circuit, so that a slow start freewheeling circuit is formed, as shown in fig. 2.
The follow current circuit component is positioned in the slow starting circuit of the optical module and used for continuously supplying power to the TIA of the optical module when the optical module is powered off, so that the power-off time of the APD detector is earlier than the power-off time of the power supply voltage in the optical module; the slow starting circuit is mainly used for reducing surge current of optical modules to circuit assemblies such as TIA (three-dimensional interactive application) and the like when the optical modules are powered on, and is further configured.
The MCU control circuit is connected with and controls the power switch combination circuit and the voltage monitoring circuit;
when the optical module is powered on, the MCU control circuit enables the power switch combination circuit to enable the TIA and the APD booster circuit of the optical module to be powered on, whether the voltage output by the APD booster circuit is matched with the voltage of the current APD detector at the temperature is determined by means of the voltage monitoring circuit, if the voltage output by the APD booster circuit is matched with the voltage of the current APD detector at the temperature, the APD booster circuit provides the voltage for the APD detector through the power switch combination circuit, and the power-on time of the APD detector is later than the power-on time of the power voltage in the optical module.
Therefore, the protection circuit of the embodiment can reduce the voltage jitter of the APD detector and the impact of the surge current of the power supply voltage, and simultaneously ensures the service life of the APD detector.
In order to better understand the protection circuit shown in fig. 1, each structure and the combined structure will be described in detail below with reference to fig. 2 to 6.
As shown in fig. 2, fig. 2 is a schematic structural diagram of a slow start freewheeling circuit in this embodiment, where the slow start freewheeling circuit is each circuit component in a dashed line frame, and the freewheeling circuit component includes: an energy storage inductor L1;
the energy storage inductor L1 is arranged between the first PMOS Q1 of the slow starting circuit and the filter capacitor C1. The inductor L1 of the present embodiment is an energy storage inductor capable of storing large energy.
The slow start continuous current circuit receives a power supply voltage signal provided by the input end VIN through the power supply voltage of the optical module input by the input end VIN, and the first resistor R1 and the filter capacitor C1 control the slow discharge of the first PMOS Q1G pole through the RC to realize slow start.
When the optical module is powered off or pulled out, the slow starting circuit, the MCU control circuit and the APD booster circuit are powered off uniformly, and the APD detector is powered off independently in advance; the follow current circuit component of the slow starting circuit continuously supplies power to the TIA of the optical module based on the electric energy stored in the follow current circuit component, so that the power-off time of the APD detector is earlier than the power-off time of the power voltage in the optical module.
When the optical module is powered on, surge current is prevented, and through the combination of the output energy storage inductor L1 and the filter capacitor C1, when a golden finger of the optical module is powered off, transient voltage stability inside the optical module can be maintained, the second diode D2 is switched on and quickly switched off to supply power to the APD detector, so that the APD power-off time is earlier than the TIA power-off time. That is, the second diode D2 turns on and turns off the fourth transistor in the reverse direction, and the third PMOS turns off so that the APD detector is powered off earlier than the power supply voltage in the optical module.
As shown in fig. 3, fig. 3 is a schematic structural diagram of the APD boost circuit in this embodiment, and the APD boost circuit in this embodiment may be any chip or combination of circuit components capable of implementing a circuit boost function in the prior art.
One voltage output pin of the boost chip of the APD boost circuit in this embodiment (i.e., the voltage output terminal of the boost chip) provides a closed-loop control signal for voltage monitoring of the VAPD.
Another voltage output pin of a boosting chip of the APD boosting circuit is connected with a third PMOS component of the power switch combination circuit, and when the third PMOS component is conducted, the voltage output pin outputs the voltage required by the APD detector so as to enable the APD detector to work;
one boosting enabling pin of a boosting chip of the APD boosting circuit is connected with a TIA power supply control pin of the MCU control circuit by means of an enabling switch component SW2, so that the APD boosting circuit starts boosting while the MCU control circuit supplies power to the TIA.
An APD voltage temperature compensation control pin of a boosting chip of the APD boosting circuit is connected with the MCU control circuit, the MCU control circuit determines a voltage value to be output based on a preset APD temperature compensation lookup table according to the operating temperature of the APD detector, and sends a control signal of the voltage value to the APD boosting circuit, so that the APD boosting circuit performs boosting adjustment, and further outputs the voltage value required by the APD detector, and the APD detector operates in a proper power supply voltage interval.
I.e., the APD boost circuit provides a bias high voltage supply for the APD detector (e.g., APD avalanche photodiode).
As shown in fig. 4 and fig. 6, fig. 4 is a schematic diagram illustrating a structure of a power switch combination circuit of the present embodiment, where the power switch combination circuit includes: a third PMOS component, a fourth triode component and an enabling switch component;
the input end of the third PMOS component is connected with the voltage output end of the APD booster circuit, and the output end of the third PMOS component is connected with the voltage input end of the APD detector;
the control end of the fourth triode component is connected with an APD voltage supply control pin of the MCU control circuit;
the output end of the fourth triode component is connected with the control end of the third PMOS component;
an enabling end of the enabling switch assembly receives a signal of a TIA power supply control pin of the MCU control circuit to close so that the TIA is powered on; the enable switch component of the present embodiment is an enable switch SW2.
The input end of the enable switch is connected with the output end of the energy storage inductor L1, namely the port connected with the filter capacitor C1.
The third PMOS component of the present embodiment includes a third PMOS Q3 and a seventh resistor R7; the first end of the seventh resistor R7 is connected with the control end of the third PMOS Q3, and the second end of the seventh resistor R7 is connected with the other voltage output pin of the boosting chip of the APD boosting circuit.
The fourth triode component of the present embodiment includes: the fourth triode Q4, the tenth resistor R10 and the eleventh resistor R11, the tenth resistor R10 is connected with the fourth triode Q4 to GND, and the switching current of the triodes is adjusted. The eleventh resistor R11 is connected with the base of the Q4 input pole to realize pull-down turn-off.
Specifically, a wired and functional component is arranged between the control end of the fourth triode component and the APD voltage supply control pin of the MCU control circuit;
the line and function assembly includes: a twelfth resistor R12 and a second diode D2; one end of the twelfth resistor R12 is connected to the APD voltage supply control pin, and the other end is connected to the control end of the fourth triode component and the anode of the second diode D2;
the cathode of the second diode D2 is connected to the source of the first PMOSQ 1.
The power switch combination circuit has the following functions: on one hand, a 3.3V power switch is supplied to a TIA of an optical module, after the power switch is conducted, namely the TIA is electrified, an APD booster circuit is started, on the other hand, a third PMOS Q3 (such as a PMOS switch) with a high-voltage conduction function is supplied to an APD detector, when an MCU control circuit correctly controls and monitors that APD voltage meets normal requirements, the third PMOS Q3 is enabled to be conducted to supply power to the APD detector;
as shown in fig. 3 and fig. 6, a circuit in a dashed line frame in fig. 3 may be a schematic structural diagram of the voltage monitoring circuit of this embodiment, and the voltage monitoring circuit of this embodiment may be any closed-loop feedback control circuit in the prior art, where one end is used to sample a voltage output end of a boost chip in an APD boost circuit, and the other end is connected to a voltage monitoring pin of the MCU control circuit.
The second resistor R2 and the third resistor R3 form a voltage division for the high voltage of the APD, one end of the second resistor R2 is connected with the high voltage power supply of the APD, one end of the second resistor R2 is connected to the third resistor R3, the other section of the third resistor R3 is grounded, a connection point FB is a feedback voltage point of a boosting chip in the APD boosting circuit, and the voltage is connected to a feedback input FB of the boosting chip.
One end of a fourth resistor R4 is connected with an APD high-voltage temperature compensation control end, namely a pin, of the MCU control circuit, one end of the fourth resistor R4 is connected with a FB, and the high-voltage output voltage of the boost chip is controlled in a node current summation mode.
The fifth resistor R5 and the sixth resistor R6 form sampling of the VAPD voltage monitoring circuit, one end of the fifth resistor R5 is connected with the APD high-voltage output end, the other end of the fifth resistor R5 is connected with the sixth resistor R6, the other end of the sixth resistor R6 is grounded, voltage is output from a connection point between the fifth resistor R5 and the sixth resistor R6 to be measured by the MCU control circuit, and the actual APD boosting voltage value can be detected through proportional conversion.
As shown in fig. 5, fig. 5 is a schematic structural diagram of the MCU control circuit in this embodiment; the MCU control circuit of this embodiment may be a control module of an existing optical module, and it is sufficient to add some functions of this embodiment to the MCU control circuit.
For example, a TIA power supply control pin, an APD voltage supply control pin, a voltage monitoring pin, etc. are added.
The MCU control circuit is used for finishing a TIA-APD power supply time sequence, controlling the voltage of the APD detector to change to the correct voltage along with the temperature change according to the temperature compensation lookup table, monitoring the voltage of the APD detector to be normally connected with the third PMOS Q3 to supply power to the APD detector, and disconnecting the third PMOS Q3 to stop supplying power to the APD detector and recording error data to facilitate reading of engineers when the voltage of the APD detector exceeds a set normal range, so that protection under the operation state is realized.
The protection circuit of the embodiment can realize the protection of the APD detector in the power-on and power-off processes of the optical module through the APD power-on time sequence and the power-off time sequence, reduces the jitter of an APD high-voltage power supply and the impact of power supply voltage surge current, and simultaneously ensures the service life of the APD detector.
According to a second aspect of the embodiments of the present invention, an embodiment of the present invention further provides an operation method of an APD detector based on the protection circuit of the first embodiment, where the operation method may include the following steps:
101. when the optical module is powered on, a slow starting circuit of the protection circuit is conducted, and the MCU control circuit operates;
102. the MCU control circuit enables the power switch combined circuit to electrify the TIA of the optical module and controls the APD booster circuit to electrify signals;
103. the MCU control circuit determines whether the voltage output by the APD booster circuit is matched with the voltage under the temperature of the current APD detector or not by means of a voltage monitoring circuit;
the MCU control circuit receives the output voltage value of the APD booster circuit fed back by the voltage monitoring circuit in real time;
the MCU control circuit detects the operating environment temperature of the APD detector in real time;
and judging whether the output voltage value of the APD booster circuit is matched with the operating temperature or not according to a preset APD temperature compensation lookup table.
104. And if the APD detector is matched with the optical module, the APD booster circuit provides a voltage signal for the APD detector through the power switch combined circuit, so that the power-on time of the APD detector is later than that of the power supply voltage in the optical module.
Of course, if there is no match, the third PMOS Q3 is not conducting and the APD detector is not operational.
When the third PMOS Q3 is conducted, the APD detector works on the APD high-voltage, and the MCU control circuit sends a control signal of a voltage value to be output to the APD booster circuit in the operation process based on the APD temperature compensation lookup table and the current operation environment temperature of the APD detector, so that the APD booster circuit boosts to a correct voltage and enables output, and stable work of the APD detector is realized.
It can be understood that when the optical module is powered off or pulled out, the slow start circuit, the MCU control circuit and the APD booster circuit are powered off, and the APD detector is powered off independently; for example, when the MCU control circuit is powered off, each component controlled by the MCU control circuit is powered off. The method of operating an APD detector further includes:
105. a follow current circuit component of the slow starting circuit continuously supplies power to the TIA of the optical module based on the electric energy stored in the follow current circuit component, so that the power-off time of the APD detector is earlier than the power-off time of the power supply voltage in the optical module.
The embodiment of the invention can effectively realize the protection of the 25G APD detector by the optical module by setting the appropriate APD power-on time sequence, power-off time sequence and software monitoring in the protection method, and is a good solution to the problem that the high-speed APD detector is easy to be subjected to overvoltage failure in the field of the optical module, and provides better protection for the APD detector when the optical module is powered on or powered off.
According to a further aspect of the embodiment of the present invention, as shown in fig. 7, an optical module is further provided, where the optical module includes the protection circuit of the APD detector in the optical module described in any of the above embodiments, and the protection circuit is used to protect the APD detector when the optical module is powered on or powered off. After the optical module is plugged, the follow current circuit is started to be conducted slowly, the MCU control circuit of the optical module is started and initialized, the MCU enables power to be supplied to the TIA, the APD booster circuit works, the MCU enables the APD temperature compensation lookup table and outputs control, and power is supplied to the APD detector when the voltage output by the APD booster circuit is within a normal monitoring range.
The embodiment can effectively solve the problem that the current 25G APD detector is easy to cause overvoltage breakdown failure in the optical module processing process and the actual operation environment. Furthermore, the method can be popularized to all optical module products using the APD detector, and has good popularization value.
In the description herein, the description of the terms "one embodiment," "some embodiments," "an embodiment," "an example," "a specific example" or "some examples" or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, the claims should be construed to include preferred embodiments and all changes and modifications that fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention should also include such modifications and variations.

Claims (7)

1. A protection circuit of an APD detector in an optical module, wherein the protection circuit is used in an optical module of 25G or more, and the protection circuit comprises:
the follow current circuit component is positioned in the slow starting circuit of the optical module and used for continuously supplying power to the TIA of the optical module when the optical module is powered off, so that the power-off time of the APD detector is earlier than the power-off time of the TIA power supply voltage in the optical module;
the voltage monitoring circuit comprises an MCU control circuit, a power switch combination circuit and an APD booster circuit; the MCU control circuit is connected with and controls the power switch combination circuit and the voltage monitoring circuit;
when the optical module is powered on, the MCU control circuit enables the power switch combined circuit to enable the TIA and the APD booster circuit of the optical module to be powered on, the voltage monitoring circuit is used for determining whether the voltage output by the APD booster circuit is matched with the voltage of the current APD detector at the temperature, if so, the APD booster circuit is enabled to provide the voltage for the APD detector through the power switch combined circuit, and the power-on time of the APD detector is later than the power-on time of the power voltage in the optical module;
the freewheel circuit assembly includes: an energy storage inductance (L1);
the energy storage inductor (L1) is arranged between a first PMOS (Q1) of the slow starting circuit and a filter capacitor (C1);
the power switch combination circuit includes:
a third PMOS component, a fourth triode component and an enabling switch component;
the input end of the third PMOS component is connected with the voltage output end of the APD booster circuit, and the output end of the third PMOS component is connected with the voltage input end of the APD detector;
the control end of the fourth triode component is connected with an APD voltage supply control pin of the MCU control circuit;
the output end of the fourth triode component is connected with the control end of the third PMOS component;
an enabling end of the enabling switch assembly receives a signal of a TIA power supply control pin of the MCU control circuit to close so that the TIA is powered on;
a wired and functional component is arranged between the control end of the fourth triode component and the APD voltage supply control pin of the MCU control circuit;
the line and function assembly includes: a twelfth resistor (R12) and a second diode (D2); one end of the twelfth resistor (R12) is connected to the APD voltage supply control pin, and the other end of the twelfth resistor is respectively connected to the control end of the fourth triode component and the anode of the second diode (D2);
the cathode of the second diode (D2) is connected with the source input end of the first PMOS (Q1) so as to conduct reversely and pull down when the light module is grounded.
2. The protection circuit of claim 1,
the input end of the enabling switch assembly is connected with the output end of the energy storage inductor (L1), and the output end of the energy storage inductor (L1) is a port connected with the filter capacitor (C1).
3. The protection circuit of claim 1,
the voltage monitoring circuit is a closed-loop feedback control circuit, one end of the voltage monitoring circuit is used for sampling the voltage output end of a boosting chip in the APD boosting circuit, and the other end of the voltage monitoring circuit is connected with a voltage monitoring pin of the MCU control circuit.
4. A method of operating an APD detector based on the protection circuit of any of claims 1 to 3, comprising:
when the optical module is powered on, a slow starting circuit of the protection circuit is conducted, and the MCU control circuit operates;
the MCU control circuit enables the power switch combined circuit to electrify the TIA of the optical module and controls the electrifying time sequence of the APD booster circuit;
the MCU control circuit determines whether the voltage output by the APD booster circuit is matched with the voltage under the temperature of the current APD detector by means of a voltage monitoring circuit;
if the APD detector is matched with the optical module, the APD booster circuit provides working voltage for the APD detector through the power switch combined circuit, and the power-on time of the APD detector is later than that of TIA power supply voltage in the optical module;
when the optical module is powered off or pulled out, the slow starting circuit, the MCU control circuit and the APD booster circuit are powered off, and the APD detector is powered off in advance;
the follow current circuit component of the slow start circuit continuously supplies power to the TIA of the optical module based on the electric energy stored in the slow start circuit, the second diode (D2) is reversely conducted to turn off the fourth triode, and the third PMOS is disconnected to enable the power-off time of the APD detector to be earlier than the power-off time of the power supply voltage in the optical module.
5. The method of claim 4, wherein the MCU control circuit determines by means of a voltage monitoring circuit whether the voltage output by the APD boost circuit matches a voltage at a current temperature of the APD detector, comprising:
the MCU control circuit receives the output voltage value of the APD booster circuit fed back by the voltage monitoring circuit in real time;
the MCU control circuit receives the operating temperature of the APD detector in real time;
and judging whether the output voltage value of the APD booster circuit is matched with the operating temperature or not according to a preset APD temperature compensation lookup table.
6. The method of claim 5, further comprising:
and the MCU control circuit sends a control signal of a voltage value to be output to the APD booster circuit based on the APD temperature compensation lookup table and the operating temperature so as to enable the APD detector to operate in a proper power supply voltage interval.
7. An optical module comprising a protection circuit for an APD detector in an optical module as claimed in any one of claims 1 to 3, the protection circuit being adapted to protect the APD detector during power up and power down of the optical module.
CN202110862012.5A 2021-07-29 2021-07-29 Protection circuit of APD detector in optical module and optical module Active CN113315583B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110862012.5A CN113315583B (en) 2021-07-29 2021-07-29 Protection circuit of APD detector in optical module and optical module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110862012.5A CN113315583B (en) 2021-07-29 2021-07-29 Protection circuit of APD detector in optical module and optical module

Publications (2)

Publication Number Publication Date
CN113315583A CN113315583A (en) 2021-08-27
CN113315583B true CN113315583B (en) 2021-11-19

Family

ID=77382095

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110862012.5A Active CN113315583B (en) 2021-07-29 2021-07-29 Protection circuit of APD detector in optical module and optical module

Country Status (1)

Country Link
CN (1) CN113315583B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111431613A (en) * 2020-03-20 2020-07-17 青岛海信宽带多媒体技术有限公司 Optical module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104320200B (en) * 2014-11-17 2016-11-16 索尔思光电(成都)有限公司 The protection circuit of APD receptor, optical module and method
CN106033225B (en) * 2015-03-16 2017-08-25 苏州旭创科技有限公司 Low-power consumption APD substrate bias controllers and bias control method and photelectric receiver
CN107231199B (en) * 2017-06-01 2019-08-06 上海市共进通信技术有限公司 Optical module with overcurrent protection function
CN111431615A (en) * 2020-05-07 2020-07-17 深圳市亚派光电器件有限公司 Optical module circuit and optical module

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111431613A (en) * 2020-03-20 2020-07-17 青岛海信宽带多媒体技术有限公司 Optical module

Also Published As

Publication number Publication date
CN113315583A (en) 2021-08-27

Similar Documents

Publication Publication Date Title
CN106033225B (en) Low-power consumption APD substrate bias controllers and bias control method and photelectric receiver
US9325202B2 (en) Power control device, power control method, and feed system
CN101630044B (en) Optical receiver
US7309853B2 (en) Method for controlling a bias voltage applied to an avalanche photodiode
US8339046B2 (en) Lighting control device of lighting device for vehicle
CN102255526B (en) AC-DC power supply conversion chip and power switching circuit
CN106209255B (en) Optical module and its laser bias circuit Poewr control method
CN203193119U (en) Automatic power control circuit and optical transceiver module comprising the automatic power control circuit
CN109378706B (en) Semiconductor laser high peak power energy supply constant current pulse driving power supply
CN114423110B (en) Circuit structure for hysteresis control
CN103037585A (en) Distributed light-emitting diode (LED) lamp and drive power supply plug-in plug-out protective circuit thereof
US7109466B2 (en) Peak and bottom detectors in burst mode optical receiver
CN103904628A (en) Charger and over-current protection circuit thereof
CN107093883B (en) Protection circuit, wireless power transmission system and overcurrent/short-circuit protection method
CN103379698A (en) LED constant current drive circuit with short-circuit protection
CN113315583B (en) Protection circuit of APD detector in optical module and optical module
CN105141137B (en) Control circuit for switching power converters
CN107750076B (en) LED driving circuit
CN112000163B (en) Bias power supply circuit of photoelectric detector
CN111030077B (en) Shunt regulation circuit for solar cell array switch and regulation method based on shunt regulation circuit
CN201256288Y (en) Bias protection device and circuit for avalanche photo diode
JP2010199953A (en) Optical reception circuit, optical reception device, and method of protecting optical reception circuit
CN210141940U (en) Single photon detector and high-voltage rapid adjusting circuit thereof
CN201153258Y (en) Avalanche photodiode bias circuit and optical transmission equipment having the circuit
CN111883085B (en) Device for improving stable work of liquid crystal equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant