CN105743340B - The bias generating circuit of avalanche photodide and relevant control circuit - Google Patents
The bias generating circuit of avalanche photodide and relevant control circuit Download PDFInfo
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- CN105743340B CN105743340B CN201410754358.3A CN201410754358A CN105743340B CN 105743340 B CN105743340 B CN 105743340B CN 201410754358 A CN201410754358 A CN 201410754358A CN 105743340 B CN105743340 B CN 105743340B
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Abstract
This disclosure relates to the bias generating circuit of avalanche photodide and relevant control circuit.This specification provides a kind of embodiment of bias generating circuit for reverse blas needed for generating an avalanche photodide, it includes: booster type power adapter, it is arranged to according to feedback signal and reference signal, input voltage is converted into higher output voltage, using the reverse blas as avalanche photodide；Reference signal generation circuit is arranged to generate reference signal；And control circuit.The control circuit includes: signal sensing circuit, is arranged to generate sensing signal corresponding with the output size of current of avalanche photodide；Analog-to-digital circuit is arranged to sensing signal being converted into digital signal；And processing circuit, it is arranged to the size according to digital signal adjustment feedback signal or reference signal, to control the size of booster type power adapter adjustment output voltage whereby.
Description
Technical field
The related avalanche photodide of the present invention (avalanche photodiode), espespecially a kind of avalanche photodide
Bias generating circuit and relevant control circuit.
Background technique
Avalanche photodide is widely used in needs compared in many optical applications of high sensitive, for example, optical communication with
Optical distance measurement etc. field.In order to obtain preferable signal gain, it is applied to the reverse blas of avalanche photodide
(reverse biasing voltage) is preferably breakdown voltage that is close but being no more than avalanche photodide
(breakdown voltage)。
The signal gain of avalanche photodide, with the reverse blas size and temperature two for being applied to avalanche photodide
Person has very strong correlation, so needing to store a record snowslide in the bias generating circuit of conventional avalanche photodiode
The look-up table (lookup table) of correlation needed for photodiode between reverse blas and temperature.Due to process variations
The relationship of (process deviation), the correlation needed for different avalanche photodides between reverse blas and temperature
It is different.
In traditional bias generating circuit, it will usually utilize a booster type power adapter (boost power
Converter reverse blas needed for an input voltage) is converted into avalanche photodide.In order to maintain the steady of aforementioned reverse blas
Fixed degree, traditional bias generating circuit need to turn using a number analog circuit (digital-to-analog converter,
DAC) according to controlling value caused by a control circuit to generate an analog signal, and the analog signal is couple to external partial pressure
In voltage division signal caused by resistance, required feedback signal when being operated as the booster type power adapter.
However, since the digital framework for turning analog circuit is more complex, occupies biggish circuit area and higher cost, institute
The circuit frame of reverse blas needed for generating avalanche photodide with traditional bias generating circuit control booster type power adapter
Structure is complex and higher cost.
Summary of the invention
In view of this, how to reduce reverse blas needed for control booster type power adapter generates avalanche photodide
Circuit framework complexity and cost, actually industry problem to be solved.
This specification provides a kind of bias generating circuit for reverse blas needed for generating an avalanche photodide
Embodiment, it includes: a booster type power adapter is arranged to according to a feedback signal and a reference signal, by an input electricity
Pressure is converted into a higher output voltage, using the reverse blas as the avalanche photodide；One reference signal generation circuit, coupling
It is connected to the booster type power adapter, is arranged to generate the reference signal；And a control circuit, which includes: one
Signal sensing circuit is arranged to generate a sensing signal corresponding with an output size of current of the avalanche photodide；
One analog-to-digital circuit, is coupled to the signal sensing circuit, is arranged to for the sensing signal to be converted into a digital signal；And
One processing circuit is coupled to the analog-to-digital circuit, is arranged to adjust the feedback signal or the reference according to the digital signal
The size of signal, to control the size that the booster type power adapter adjusts the output voltage whereby.
This specification also provides a kind of embodiment for the control circuit in a bias generating circuit.The bias generates electricity
Road includes that a booster type power adapter and a reference signal produce for reverse blas needed for generating an avalanche photodide
Raw circuit, the booster type power adapter are arranged to be converted into an input voltage according to a feedback signal and a reference signal
One higher output voltage, using the reverse blas as the avalanche photodide, and the reference signal generation circuit is coupled to this
Booster type power adapter is arranged to generate the reference signal.The control circuit includes: a signal sensing circuit is arranged to produce
A raw sensing signal corresponding with an output size of current of the avalanche photodide；One analog-to-digital circuit, coupling
In the signal sensing circuit, it is arranged to for the sensing signal to be converted into a digital signal；And a processing circuit, it is coupled to the mould
It is quasi- to turn digital circuit, it is arranged to adjust the feedback signal or the size of the reference signal according to the digital signal, to control whereby
The booster type power adapter adjusts the size of the output voltage.
One of the advantages of above-described embodiment, be without turning analog circuit in bias generating circuit setting number, therefore can be effective
Reduce the circuit framework complexity and cost of reverse blas needed for control booster type power adapter generates avalanche photodide.
Further advantage of the invention will be explained in more detail by the following description and schema.
Detailed description of the invention
Fig. 1 is the simplified functional block diagram of bias generating circuit of one embodiment of the invention.
Fig. 2 is the simplified functional block diagram of bias generating circuit of another embodiment of the present invention.
[symbol of figure briefly describes]:
100 bias generating circuits
102 avalanche photodides
104 current-sensing circuits
106 turns of impedance amplifiers
110 booster type power adapters
120 reference signal generation circuits
130 control circuits
131 signal sensing circuits
132 analog-to-digital circuits
133 feedback nodes
134 first adjustable resistances
135 second adjustable resistances
136 processing circuits
Specific embodiment
Illustrate the embodiment of the present invention below in conjunction with correlative type.In the drawings, identical label indicate it is identical or
Similar component or method flow.
Fig. 1 is the bias generating circuit (biasing voltage generating circuit) of one embodiment of the invention
100 simplified functional block diagrams.Bias generating circuit 100 is for reverse blas needed for generating an avalanche photodide 102.
As shown in Figure 1, bias generating circuit 100 includes a current-sensing circuit (current detection circuit) 104, one
Booster type power adapter (boost power converter) 110, one reference signal generation circuit (reference
Signal generating circuit) 120 and a control circuit (control circuit) 130.
In bias generating circuit 100, booster type power adapter 110 is arranged to according to the reference of a feedback signal FB and one
One input voltage VIN is converted into a higher output voltage VO UT by signal VREF, using as 102 institute of avalanche photodide
The reverse blas needed.When the output voltage VO UT that booster type power adapter 110 generates reaches the operation of avalanche photodide 102
When voltage, avalanche photodide 102 can generate corresponding output electric current IA in response to the size of input light.Current sense electricity
Road 104 is arranged to detect the size of the output electric current IA of avalanche photodide 102, and turns impedance amplifier
The output electric current IA of avalanche photodide 102 can be converted into corresponding by (transimpedance amplifier) 106
Voltage signal, so that the reception circuit (not shown) of rear class carries out solution modulation process.
In addition, reference signal generation circuit 120 is coupled to booster type power adapter 110, it is arranged to generate reference signal
VREF.Control circuit 130 is arranged to the output electric current IA according to avalanche photodide 102, to adjust the conversion of booster type power supply
Device 110 operates required feedback signal FB, so that the size for the output voltage VO UT that booster type power adapter 110 generates rises
To breakdown voltage close but no more than avalanche photodide 102, higher signal gain is obtained whereby.
In implementation, current-sensing circuit 104 above-mentioned can be realized with the framework of various current mirrors.In addition, booster type is electric
Source converter 110 can be realized with the framework of various synchronous modes or asynchronous system booster type power adapter.
In the embodiment in figure 1, control circuit 130 includes a signal sensing circuit (signal sensing circuit)
131, an analog-to-digital circuit (analog-to-digital converter, ADC) 132, one feedback node (feedback
Node) 133, one first adjustable resistance (variable resistor), 134, one second adjustable resistance 135 and a processing electricity
Road (processing circuit) 136.
In control circuit 130, signal sensing circuit 131 is arranged to generate the output electricity with avalanche photodide 102
Flow the corresponding sensing signal VS of IA size.Analog-to-digital circuit 132 is coupled to signal sensing circuit 131, be arranged to by
Sensing signal VS is converted into a digital signal DS.Feedback node 133 is for providing feedback signal FB.First adjustable resistance, 134 coupling
It is connected between an output end of the booster type power adapter 110 and feedback node 133.Second adjustable resistance 135 is coupled to instead
It presents between node 133 and one fixed potential end (for example, ground terminal).Processing circuit 136 is coupled to analog-to-digital circuit 132,
And it is arranged to the size according to digital signal DS adjustment feedback signal FB, to control the adjustment of booster type power adapter 110 whereby
The size of output voltage VO UT.For example, processing circuit 136 can be arranged to change the first adjustable resistance according to digital signal DS
134 and second adjustable resistance 135 at least one of resistance value, to adjust the feedback signal that is formed in feedback node 133
The size of FB.
In implementation, signal sensing circuit 131 can be realized with the combination of various suitable resistance or resistance and capacitor,
To generate the sensing signal VS of voltage form.
In addition, the different function square in aforementioned bias generating circuit 100 can be realized with different circuits respectively, it can also
It is incorporated into a single circuit chip.For example, all function blocks in control circuit 130 may be integrally incorporated to a single circuit core
It, can also be by control circuit 130 and booster type power adapter 110, reference signal generation circuit 120, current sense electricity in piece
At least one of road 104 is integrated into single circuit chip.
In running, the processing circuit 136 of control circuit 130 can be first by the first adjustable resistance 134 and the second adjustable resistance
Both 135 resistance value is arranged to have a predetermined dividing ratios, so that the output voltage VO UT of booster type power adapter 110
Reach a predeterminated level.When avalanche photodide 102 receives light, if the generation of booster type power adapter 110 is defeated
Voltage VOUT is too low out, then the inverse bias current IA that avalanche photodide 102 generates can be too small, leads to signal sensing circuit 131
The voltage value of the sensing signal VS of generation is too low.
At this point, analog-to-digital circuit 132 can be by generated digital signal DS notifier processes circuit 136.Then, it handles
Circuit 136 will be by the side for at least one of resistance value for changing the first adjustable resistance 134 and the second adjustable resistance 135
Formula changes the dividing ratios of both the first adjustable resistance 134 and the second adjustable resistance 135, is turned with controlling booster type power supply whereby
Parallel operation 110 gradually increases the size of output voltage VO UT, until processing circuit 136 determines booster type power supply through digital signal DS
Until reverse blas size needed for the output voltage VO UT of converter 110 reaches avalanche photodide 102.
By preceding description, it is found that no setting is required in bias generating circuit 100, any number turns analog circuit (DAC), therefore
It can effectively reduce the circuit framework of reverse blas needed for control booster type power adapter 110 generates avalanche photodide 102
Complexity and cost.
In addition, other external divider resistances are set without additional on the circuit board of setting bias generating circuit 100,
The complexity and cost of circuit can further be saved.
Fig. 2 is the simplified functional block diagram of bias generating circuit 200 of another embodiment of the present invention.Bias generating circuit
200 is much like with the framework of bias generating circuit 100 above-mentioned, but bias generating circuit 200 is replaced using control circuit 230
Control circuit 130 in bias generating circuit 100.
In the embodiment of fig. 2, control circuit 230 is equally comprising signal sensing circuit 131 above-mentioned, analog-to-digital electricity
Road 132 and processing circuit 136, but be omitted in control circuit 130 feedback node 133, the first adjustable resistance 134 and
Second adjustable resistance 135.
As shown in Fig. 2, the processing circuit 136 in control circuit 230 is further coupled to reference signal generation circuit 120, and set
It is set to the size for adjusting reference signal VREF according to digital signal DS control reference signal generation circuit 120, is reached with before whereby
State the similar effect of embodiment.
For example, the processing circuit 136 of control circuit 230, which can first control reference signal generation circuit 120, to join in running
It examines signal VREF to adjust to a predefined size, so that the output voltage VO UT of booster type power adapter 110 reaches a predetermined water
It is flat.When avalanche photodide 102 receives light, if the output voltage VO UT mistake that booster type power adapter 110 generates
Low, then the inverse bias current IA that avalanche photodide 102 generates can be too small, the sensing letter for causing signal sensing circuit 131 to generate
The voltage value of number VS is too low.
At this point, analog-to-digital circuit 132 can be by generated digital signal DS notifier processes circuit 136.Then, it handles
Circuit 136 will control the size that reference signal generation circuit 120 changes reference signal VREF, to control booster type power supply whereby
Converter 110 gradually increases the size of output voltage VO UT, until processing circuit 136 determines booster type electricity through digital signal DS
Until reverse blas size needed for the output voltage VO UT of source converter 110 reaches avalanche photodide 102.
Identical as embodiment above-mentioned, no setting is required in bias generating circuit 200, and any number turns analog circuit
(DAC), therefore it can effectively reduce reverse blas needed for control booster type power adapter 110 generates avalanche photodide 102
Circuit framework complexity and cost.
In addition, other external divider resistances are set without additional on the circuit board of setting bias generating circuit 200,
The complexity and cost of circuit can further be saved.
Connection relationship, embodiment, function mode and phase in relation to other components in aforementioned bias generating circuit 100
The explanation of the advantages of pass, the correspondence component being also applied in bias generating circuit 200, for brevity, not repeated description herein.
Some vocabulary is used in specification and claim to censure specific component.However, affiliated technology
Has usually intellectual in field, it is to be appreciated that same component may be called with different nouns.Specification and application
The scope of the patents is come with the difference of component functionally as differentiation not in such a way that the difference of title is as component is distinguished
Benchmark.The "comprising" mentioned by specification and claim is open term, thus should be construed to " include but not
It is defined in ".In addition, " coupling " is herein comprising any direct and indirect connection means.Therefore, if it is described herein that first assembly coupling
It is connected to the second component, then representing first assembly can be by being electrically connected or being wirelessly transferred, and the signals connection type such as optical delivery
It is attached directly to the second component, or electrical property or signal are connected to this second group indirectly by other components or connection means
Part.
It is used herein " and/or " describing mode, any group comprising one of cited or multiple projects
It closes.In addition, unless specified in the instructions, otherwise the term of any singular lattice all includes the connotation of multiple grid simultaneously.
" voltage signal " in specification and claim, can be used voltage form on the implementation or current forms are come
It realizes." current signal " in specification and claim, also voltage available form or current forms are come in fact on the implementation
It is existing.
The foregoing is merely a prefered embodiment of the invention, all equivalent variationss and modification done according to the claims in the present invention, all
It should belong to the scope of the present invention.
Symbol description
100,200 bias generating circuit
102 avalanche photodides
104 current-sensing circuits
106 turns of impedance amplifiers
110 booster type power adapters
120 reference signal generation circuits
130,230 control circuit
131 signal sensing circuits
132 analog-to-digital circuits
133 feedback nodes
134 first adjustable resistances
135 second adjustable resistances
136 processing circuits
Claims (6)
1. a kind of bias generating circuit, for reverse blas needed for generating an avalanche photodide, the bias generating circuit packet
Contain:
One booster type power adapter is arranged to that one input voltage is converted into one according to a feedback signal and a reference signal
Higher output voltage, using the reverse blas as the avalanche photodide；
One reference signal generation circuit is coupled to the booster type power adapter, is arranged to generate the reference signal；And
One control circuit, it includes:
One signal sensing circuit is arranged to generate a sensing corresponding with an output size of current of the avalanche photodide
Signal；
One analog-to-digital circuit, is coupled to the signal sensing circuit, is arranged to for the sensing signal to be converted into a digital signal；
And
One processing circuit is coupled to the analog-to-digital circuit, is arranged to adjust the feedback signal according to the digital signal or be somebody's turn to do
The size of reference signal, so that the size for the output voltage that the booster type power adapter generates rises towards but do not surpass
The breakdown voltage of the avalanche photodide is crossed, obtains high RST gain whereby.
2. bias generating circuit according to claim 1, wherein the control circuit also includes:
One feedback node, for providing the feedback signal；
One first adjustable resistance, is coupled between an output end of the booster type power adapter and the feedback node；And
One second adjustable resistance is coupled between the feedback node and a fixed potential end；
Wherein, which is arranged to change first adjustable resistance and second adjustable resistance according to the digital signal extremely
One of few resistance value, to adjust the size of the feedback signal.
3. bias generating circuit according to claim 1, wherein the processing circuit is further coupled to the reference signal and generates electricity
Road, and be arranged to adjust the size of the reference signal according to the Digital Signals reference signal generation circuits.
4. a kind of control circuit in a bias generating circuit, wherein the bias generating circuit is for generating a snowslide light
Reverse blas needed for electric diode, and include a booster type power adapter and a reference signal generation circuit, booster type electricity
Source converter is arranged to that one input voltage is converted into a higher output voltage according to a feedback signal and a reference signal,
Using the reverse blas as the avalanche photodide, and the reference signal generation circuit is coupled to the booster type power adapter,
It is arranged to generate the reference signal, which includes:
One signal sensing circuit is arranged to generate a sensing corresponding with an output size of current of the avalanche photodide
Signal；
One analog-to-digital circuit, is coupled to the signal sensing circuit, is arranged to for the sensing signal to be converted into a digital signal；
And
One processing circuit is coupled to the analog-to-digital circuit, is arranged to adjust the feedback signal according to the digital signal or be somebody's turn to do
The size of reference signal, so that the size for the output voltage that the booster type power adapter generates rises towards but do not surpass
The breakdown voltage of the avalanche photodide is crossed, obtains high RST gain whereby.
5. control circuit according to claim 4, also includes:
One feedback node, for providing the feedback signal；
One first adjustable resistance, is coupled between an output end of the booster type power adapter and the feedback node；And
One second adjustable resistance is coupled between the feedback node and a fixed potential end；
Wherein, which is arranged to change first adjustable resistance and second adjustable resistance according to the digital signal extremely
One of few resistance value, to adjust the size of the feedback signal.
6. control circuit according to claim 4, wherein the processing circuit is further coupled to the reference signal generation circuit,
And it is arranged to adjust the size of the reference signal according to the Digital Signals reference signal generation circuits.
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| CN201410754358.3A CN105743340B (en) | 2014-12-10 | 2014-12-10 | The bias generating circuit of avalanche photodide and relevant control circuit |
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| CN201410754358.3A CN105743340B (en) | 2014-12-10 | 2014-12-10 | The bias generating circuit of avalanche photodide and relevant control circuit |
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| CN105743340A CN105743340A (en) | 2016-07-06 |
| CN105743340B true CN105743340B (en) | 2019-01-11 |
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| CN106374753B (en) * | 2016-11-18 | 2020-01-17 | 昂宝电子（上海）有限公司 | Power conversion system and control method thereof |
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| US10069027B1 (en) * | 2017-09-15 | 2018-09-04 | Premium Genetics (Uk) Ltd | Cytometer sperm sex sensing apparatus with an avalanche photodiode |
| CN108880694B (en) * | 2018-06-01 | 2021-04-02 | 上海市共进通信技术有限公司 | Method for rapidly calibrating reverse bias voltage of Avalanche Photodiode (APD) |
| US10673606B1 (en) * | 2019-01-22 | 2020-06-02 | Realtek Semiconductor Corp. | High-speed full-duplex transceiver and method thereof |
| CN110445541B (en) * | 2019-08-13 | 2022-01-28 | 青岛海信宽带多媒体技术有限公司 | Control method and device for providing bias voltage for APD (avalanche photo diode), and optical module |
| CN110596681A (en) * | 2019-10-21 | 2019-12-20 | 苏州玖物互通智能科技有限公司 | Voltage type closed loop temperature-dependent regulating system based on FPGA chip |
| CN110596680A (en) * | 2019-10-21 | 2019-12-20 | 苏州玖物互通智能科技有限公司 | Laser radar APD voltage type closed loop temperature-dependent regulating system |
| CN111725972B (en) * | 2020-06-24 | 2021-11-16 | 武汉电信器件有限公司 | Bias circuit of avalanche photodiode and power supply method |
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