CN201185188Y - LED chip packaging structure capable of generating crossrange light permeating a rugged surface - Google Patents
LED chip packaging structure capable of generating crossrange light permeating a rugged surface Download PDFInfo
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- CN201185188Y CN201185188Y CNU2008200084844U CN200820008484U CN201185188Y CN 201185188 Y CN201185188 Y CN 201185188Y CN U2008200084844 U CNU2008200084844 U CN U2008200084844U CN 200820008484 U CN200820008484 U CN 200820008484U CN 201185188 Y CN201185188 Y CN 201185188Y
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- 238000005538 encapsulation Methods 0.000 claims description 34
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 230000005855 radiation Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The utility model provides an LBD chip seal structure which penetrates a rough surface so as to generate side illumination which comprises a substrate unit, a luminous unit and a seal colloid unit. The substrate unit is provided with a substrate body as well as an anode conductive track and a cathode conductive track respectively formed on the substrate body. The luminous unit is provided with a plurality of LBD chips arranged on the substrate body; wherein, each LBD chip is provided with an anode terminal and a cathode terminal, respectively and electrically connected on the anode conductive track and the cathode conductive track of the substrate unit. The seal colloid unit is provided with a plurality of semi-seal colloids which are respectively covered on the LBD chips; wherein, the upper surfaces and the front surfaces of each semi-seal colloid are respectively provided with a colloid arc and a rough colloid luminous surface. The LBD chip seal structure can generate the function of side protection and can consider the radiating effect for being used in a thin shell.
Description
Technical field
The utility model relates to a kind of LED encapsulation construction, relates in particular to a kind of matsurface that sees through to produce the LED encapsulation construction of lateral direction light emission.
Background technology
See also shown in Figure 1ly, it is the flow chart of first kind of method for packing of known light-emitting diode.By in the flow chart as can be known, first kind of method for packing of known light-emitting diode, its step comprises: at first, provide light-emitting diode (packaged LED) that a plurality of encapsulation finish (S800); Then, provide strip substrate body (stripped substrate body), have positive conductive traces and negative pole conductive traces (S802) on it; At last, the light-emitting diode that each encapsulation is finished (packaged LED) is arranged on this strip substrate body successively, and the positive and negative positive and negative electrode conductive traces (S804) that extremely is electrically connected on this strip substrate body respectively of the light-emitting diode (packaged LED) that each encapsulation is finished.
See also shown in Figure 2ly, it is the flow chart of second kind of method for packing of known light-emitting diode.By in the flow chart as can be known, second kind of method for packing of known light-emitting diode, its step comprises: at first, provide strip substrate body (stripped substrate body), have positive conductive traces and negative pole conductive traces (S900) on it; Then, successively a plurality of light-emitting diode chip for backlight unit are arranged on this strip substrate body, and with the positive and negative positive and negative electrode conductive traces (S902) that extremely is electrically connected on this strip substrate body respectively of each light-emitting diode chip for backlight unit; At last, the strip packing colloid is covered on this strip substrate body and the described light-emitting diode chip for backlight unit, the optical wand (light bar) that has strip light-emitting zone (a strippedlight-emitting area) with formation (S904).
Yet, first kind of method for packing about above-mentioned known light-emitting diode, because the light-emitting diode (packaged LED) that each encapsulation is finished must cut down from a monoblock LED package earlier, and then with surface adhering technology (SMT) technology, the light-emitting diode (packaged LED) that each encapsulation is finished is arranged on this strip substrate body, therefore its process time can't effectively be shortened, moreover, when luminous, have blanking bar (dark band) phenomenon between the light-emitting diode that described encapsulation is finished (packaged LED) and exist, still produce not good effect for user's sight line.
In addition, about second kind of method for packing of above-mentioned known light-emitting diode, because the optical wand of being finished has the strip light-emitting zone, therefore second kind of method for packing will can not produce the problem of blanking bar (dark band).Yet, because the zone that this strip packing colloid is excited is uneven, thereby make the optical efficiency of optical wand not good (that is, can produce stronger excitation source near the packing colloid of light-emitting diode chip for backlight unit zone, then produce more weak excitation source) away from the packing colloid zone of light-emitting diode chip for backlight unit.
See also shown in Figure 3ly, it is applied to the schematic diagram of lateral direction light emission for known light-emitting diode.By among the figure as can be known, when known light-emitting diode chip for backlight unit D is applied to lateral direction light emission (for example: the side direction light source that is used in the light guide plate M of notebook computer screen), because the extremely thin relation of light guide plate M of notebook computer screen, the length L A of the pedestal S1 of this light-emitting diode chip for backlight unit D then must relative shortening.In other words, because the too short relation of length L A of this pedestal S1, known light-emitting diode chip for backlight unit D can't obtain effective radiating effect, and then produce light-emitting diode chip for backlight unit D because of the overheated situation that burns out.
Therefore, as from the foregoing, present known light emitter diode seal method and encapsulating structure obviously have inconvenience and exist with defective, and wait to be improved.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of matsurface that sees through to produce the LED encapsulation construction of lateral direction light emission.Light emitting diode construction of the present utility model is when luminous, form continuous light-emitting zone, and the situation of not having blanking bar (dark band) and optical attenuation (decay) takes place, and the utility model sees through chip and directly encapsulates (Chip On Board, COB) technology and utilize the mode of pressing mold (die mold), so that the utility model can shorten its process time effectively, and can produce in a large number.Moreover structural design of the present utility model more is applicable to various light sources, such as application such as backlight module, Decorating lamp strip, illuminator lamp or scanner light sources, is all applied scope of the utility model and product.
In addition, packing colloid of the present utility model sees through the pressing mold process of special dies, so that LED encapsulation construction of the present utility model under upright situation, can produce the effect of lateral direction light emission, so the utility model does not have the not enough situation generation of heat radiation.In other words, the utility model not only can produce the function of side direction light projector, can also turn round and look at the radiating effect that is applied in the thin case.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present utility model, provide a kind of matsurface that sees through to produce the LED encapsulation construction of lateral direction light emission, it comprises: base board unit, luminescence unit, and packing colloid unit.
Wherein, this base board unit has substrate body and is formed at positive conductive traces and negative pole conductive traces on this substrate body respectively.This luminescence unit has a plurality of light-emitting diode chip for backlight unit that are arranged on this substrate body, and wherein each light-emitting diode chip for backlight unit has the positive terminal and the negative pole end of the positive and negative electrode conductive traces that is electrically connected on this base board unit respectively.This packing colloid unit has a plurality of packing colloids that are covered in respectively on the described light-emitting diode chip for backlight unit, and wherein the upper surface of each half packing colloid and front surface have colloid cambered surface and coarse colloid exiting surface respectively.
In addition, LED encapsulation construction of the present utility model can further comprise following two kinds of structures:
First kind: frame unit, it is covered on this substrate body for one deck and coats the ccf layer that each half packing colloid only exposes described coarse colloid exiting surface.
Second kind: frame unit, it has and a plurality ofly covers described packing colloid respectively and only expose the framework of the coarse colloid exiting surface of each half packing colloid, and wherein said framework is arranged on this substrate body separated from one anotherly.
Therefore, light emitting diode construction of the present utility model forms continuous light-emitting zone when luminous, and does not have the situation generation of blanking bar (dark band) and optical attenuation (decay).And the utility model sees through chip and encapsulates directly that (Chip On Board, COB) technology and utilize the mode of pressing mold (die mold) so that the utility model can shorten its process time effectively, and can be produced in a large number.Moreover, because LED encapsulation construction of the present utility model under upright situation, can produce the effect of lateral direction light emission.Therefore, the utility model not only can produce the function of side direction light projector, more can turn round and look at the radiating effect that is applied in the thin case.
In order further to understand the utility model is to reach technology, means and the effect that predetermined purpose is taked, see also following about detailed description of the present utility model and accompanying drawing, believe the purpose of this utility model, feature and characteristics, when being goed deep into thus and concrete understanding, yet appended accompanying drawing only provides reference and explanation usefulness, is not to be used for the utility model is limited.
Description of drawings
Fig. 1 is the flow chart of first kind of method for packing of known light-emitting diode;
Fig. 2 is the flow chart of second kind of method for packing of known light-emitting diode;
Fig. 3 is applied to the schematic diagram of lateral direction light emission for known light-emitting diode;
Fig. 4 a to Fig. 4 f is respectively the encapsulation flow process schematic perspective view of first embodiment of the utility model encapsulating structure;
Fig. 4 A to Fig. 4 F is respectively the encapsulation flow process generalized section of first embodiment of the utility model encapsulating structure;
Fig. 5 reaches the schematic diagram of electrical connection for the mode that the utility model light-emitting diode chip for backlight unit sees through flip-chip (flip-chip);
Fig. 6 does not pour into the preceding schematic diagram of packing colloid for the utility model Fig. 4 C;
Fig. 7 a to Fig. 7 b is respectively the part encapsulation flow process schematic perspective view of second embodiment of the utility model encapsulating structure;
Fig. 7 A to Fig. 7 B is respectively the part encapsulation flow process generalized section of second embodiment of the utility model encapsulating structure;
Fig. 8 a is the part encapsulation flow process schematic perspective view of the 3rd embodiment of the utility model encapsulating structure;
Fig. 8 A is the part encapsulation flow process generalized section of the 3rd embodiment of the utility model encapsulating structure; And
Fig. 9 is applied to the schematic diagram of lateral direction light emission for the encapsulating structure of the utility model light-emitting diode chip for backlight unit.
Wherein, description of reference numerals is as follows:
Known technology
The D light-emitting diode chip for backlight unit
The M light guide plate
The S1 pedestal
LA length
The utility model
1 base board unit, 10 substrate body
The 10A metal level
10B bakelite layer
11 positive conductive traces
12 negative pole conductive traces
1 ' base board unit, 11 ' positive conductive traces
12 ' negative pole conductive traces
2 vertical light-emitting diode chip for backlight unit are arranged 20 light-emitting diode chip for backlight unit
201 is extreme
202 negative pole ends
20 ' light-emitting diode chip for backlight unit
201 ' positive terminal
202 ' negative pole end
3 strip packing colloids, 30 packing colloids
300 half packing colloids
30S colloid cambered surface
300S hemicolloid cambered surface
The coarse colloid exiting surface of 301S
3 ' strip packing colloid 30S ' mould cambered surface
4 frame units, 40 ccf layers
4 ' strip framework layer, 40 ' framework
The W lead
B tin ball
The M1 first die unit M11 first mold
The M110 first passage
M12 first bed die
The G groove
G10 mould cambered surface
The M2 second die unit M21 second mold
The M210 second channel
M22 second bed die
M3 the 3rd die unit M31 the 3rd mold
The M310 third channel
M32 the 3rd bed die
M4 the 4th die unit M41 the 4th mold
The M410 four-way
M42 the 4th bed die
The L1 optical wand
The L2 optical wand
The D light-emitting diode chip for backlight unit
The M light guide plate
The S2 pedestal
Lb length
Embodiment
First embodiment of the present utility model provides a kind of method for packing that sees through matsurface with the LED encapsulation construction of generation lateral direction light emission, and it comprises the following steps:
At first, please cooperate shown in Fig. 4 a and Fig. 4 A, base board unit 1 is provided, it has substrate body 10 and is formed at a plurality of positive conductive traces 11 and a plurality of negative pole conductive traces 12 (S100) on this substrate body 10 respectively.This substrate body 10 comprise metal level 10A and be formed in this metal level 10A bakelite layer (bakelite layer) 10B (shown in Fig. 4 a and Fig. 4 A), moreover, according to different design requirements, this substrate body 10 can be printed circuit board (PCB) (PCB), soft base plate (flexible substrate), aluminium base (aluminum substrate), ceramic substrate (ceramic substrate) or copper base (coppersubstrate).In addition, this positive and negative electrode conductive traces 11,12 can adopt aluminum steel road (aluminum circuit) or silver-colored circuit (silver circuit), and the layout (layout) of this positive and negative electrode conductive traces 11,12 can change to some extent along with different needs.
Then, please cooperate shown in Fig. 4 b and Fig. 4 B, see through the mode of matrix, a plurality of light-emitting diode chip for backlight unit 20 are set respectively on this substrate body 10, to form the vertical light-emitting diode chip for backlight unit row 2 of many rows, wherein each light-emitting diode chip for backlight unit 20 has the positive terminal 201 and negative pole end 202 (S102) of the positive and negative electrode conductive traces 11,12 that is electrically connected on this base board unit respectively.
In addition, with first embodiment of the present utility model, positive and negative extreme 201,202 of each light-emitting diode chip for backlight unit 20 sees through two corresponding lead W and in the mode of routing (wire-bounding), is electrically connected to produce with the positive and negative electrode conductive traces 11,12 of this base board unit 1.Moreover each is arranged vertical light-emitting diode chip for backlight unit row 2 arrangement modes with straight line and is arranged on the substrate body 10 of this base board unit 1, and each light-emitting diode chip for backlight unit 20 can be blue led chips (blueLED).
Certainly, the electric connection mode of above-mentioned described light-emitting diode chip for backlight unit 20 is not in order to limit the utility model, for example: see also (the utility model light-emitting diode chip for backlight unit sees through the mode of flip-chip and reaches the schematic diagram of electrical connection) shown in Figure 5, each light-emitting diode chip for backlight unit 20 ' positive and negative extreme 201 ', 202 ' see through a plurality of corresponding tin ball B and in the mode of flip-chip (flip-chip), with this base board unit 1 ' positive and negative electrode conductive traces 11 ', 12 ' produce and be electrically connected.In addition, according to different design requirements, the mode that described light-emitting diode chip for backlight unit (figure do not show) positive and negative extremely can be connected (parallel), (serial) in parallel or series connection add parallel connection (parallel/serial) produces with the positive and negative electrode conductive traces with this base board unit (figure does not show) and to be electrically connected.
Then, please cooperate shown in Fig. 4 c and Fig. 4 C, see through the first die unit M1, a plurality of strip packing colloids 3 are longitudinally covered each respectively arrange on vertical light-emitting diode chip for backlight unit row 2, wherein the upper surface of each strip packing colloid 3 has the colloid cambered surface 30S (S104) of a plurality of corresponding described light-emitting diode chip for backlight unit 20.
See also shown in Figure 6, this first die unit M1 by the first mold M11 and the first bed die M12 that is used to carry this substrate body 10 formed, and this first mold M11 has many corresponding described vertical light-emitting diode chip for backlight unit rows' 2 first passage M110.Wherein each first passage M110 has a plurality of groove G, and the upper surface cording of each groove G has mould cambered surface (the mold CAmbered surfACe) G10 of corresponding this colloid cambered surface 30S.
In addition, the size of described first passage M110 and described strip packing colloid 3 is measure-alike.Moreover, each strip packing colloid 3 can be according to different user demands, and are chosen as: mixed the fluorescent colloid (fluoresCentresin) that forms with fluorescent material (fluoresCent powder) or mixed the fluorescent colloid (fluoresCent resin) that forms by epoxy resin (epoxy) with fluorescent material (fluoresCent powder) by silica gel (siliCon).
And then, please cooperate shown in Fig. 4 d and Fig. 4 D, between per two vertical light-emitting diode chip for backlight unit 20, laterally cut described strip packing colloid 3, to form a plurality of packing colloids 30 that are covered in apart from each other on each light-emitting diode chip for backlight unit 20, wherein the upper surface of each half packing colloid 30 is this colloid cambered surface 30S (S106).
Then, please cooperate shown in Fig. 4 e and Fig. 4 E, see through second die unit (second mold unit) M2, be covered in frame unit 4 on this substrate body 10 and the described packing colloid 30 and be filled between the described packing colloid 30 (S108).Wherein, this second die unit M2 by the second mold M21 and the second bed die M22 that is used to carry this substrate body 10 formed, and this second mold M21 has the second channel M210 of corresponding this frame unit 4, the height of this second channel M210 is identical with the height of described packing colloid 30 in addition, and the width of this second channel M210 is identical with the width of this frame unit 4.
At last, please consult Fig. 4 e again, and cooperate shown in Fig. 4 f and Fig. 4 F, between per two vertical light-emitting diode chip for backlight unit 20, laterally cut this frame unit 4, described packing colloid 30, and this substrate body 10, to form many optical wand L1, and each half packing colloid, 30 quilt is to being cut into two and half packing colloids 300, each half packing colloid 300 has hemicolloid cambered surface 300S and is formed at the coarse colloid exiting surface 301S of this hemicolloid cambered surface 300S front end, and this frame unit 4 is cut into the ccf layer 40 (S110) that a plurality of the described coarse colloid exiting surface 301S that allow all half packing colloids 300 on each bar optical wand L1 expose.Wherein, described ccf layer 40 can be light tight ccf layer, for example: the white box rack-layer.
In addition, the step S100 to S106 with first embodiment is identical respectively for the step S200 to S206 of second embodiment.That is step S200 is equal to Fig. 4 a of first embodiment and the schematic view illustrating of Fig. 4 A; Step S202 is equal to Fig. 4 b of first embodiment and the schematic view illustrating of Fig. 4 B; Step S204 is equal to Fig. 4 c of first embodiment and the schematic view illustrating of Fig. 4 C; Step S206 is equal to Fig. 4 d of first embodiment and the schematic view illustrating of Fig. 4 D.
Moreover, after step S206, second embodiment of the present utility model further comprises: at first, see also shown in Fig. 7 a and Fig. 7 A, see through the 3rd die unit M3, with many strip ccf layers (stripped frAme lAyer) 4 ' be covered on this substrate body 10 and the described packing colloid 30 and longitudinally be filled between per two packing colloids 30 (S208).
Wherein, the 3rd die unit M3 by the 3rd mold M31 and the 3rd bed die M32 that is used to carry this substrate body 10 formed, and the 3rd mold M31 has many corresponding described vertical light-emitting diode chip for backlight unit rows' 2 third channel M310, and the height of this third channel M310 is identical with the height of described packing colloid 30, and the width of this third channel M310 is greater than the width of each half packing colloid 30.
At last, please consult Fig. 7 a again, and cooperate shown in Fig. 7 b and Fig. 7 B, between per two vertical light-emitting diode chip for backlight unit 20, laterally cut described strip framework layer (stripped frame layer) 4 ', described packing colloid 30 and this substrate body 10, to form many optical wand L2, and each half packing colloid, 30 quilt is to being cut into two and half packing colloids 300, each half packing colloid 300 has hemicolloid cambered surface 300S and is formed at the coarse colloid exiting surface 301S of this hemicolloid cambered surface 300S front end, the framework 40 ' (S210) that a plurality of on described strip framework layer (stripped frame layer) 4 ' be cut into allows the coarse colloid exiting surface 301S of each half packing colloid 300 expose.Wherein, described framework 40 ' be to can be light tight framework, for example: white framework.
See also shown in Fig. 8 a and Fig. 8 A.Fig. 8 a is the part encapsulation schematic flow sheet of the 3rd embodiment of the utility model encapsulating structure, and Fig. 8 A is the part encapsulation flow process generalized section of the 3rd embodiment of the utility model encapsulating structure.By the flow chart of Fig. 8 a and Fig. 8 A as can be known, the difference of the 3rd embodiment and first and second embodiment is: the step S204 of the step S104 of first embodiment and second embodiment all changes in the 3rd embodiment: " between per two horizontal (transverse) light-emitting diode chip for backlight unit 20, longitudinally cut described strip packing colloid 3 ' ".
Moreover, the 4th die unit M4 by the 4th mold M41 and the 4th bed die M42 that is used to carry this substrate body 10 formed.In addition, different being of the 4th die unit M4 and this first die unit M1 maximum: the upper surface of each four-way M410 and front surface have mould cambered surface (mold cambered surface) 30S ' respectively.So, a plurality of strip packing colloids 3 ' laterally cover respectively longitudinally on (longitudinal) light-emitting diode chip for backlight unit 2.
See also shown in Figure 9ly, it is applied to the schematic diagram of lateral direction light emission for the encapsulating structure of the utility model light-emitting diode chip for backlight unit.By among the figure as can be known, (for example: the side direction light source that is used in the light guide plate M of notebook computer screen), the length L b of the pedestal S2 of this light-emitting diode chip for backlight unit D can be according to the needs of heat radiation extend (being subjected to the restriction of light guide plate M thickness unlike known) when light-emitting diode chip for backlight unit D of the present utility model is applied to lateral direction light emission.In other words, owing to the length L b of this pedestal S2 can extend according to the needs of heat radiation, therefore light-emitting diode chip for backlight unit D of the present utility model can obtain effective radiating effect, and then can avoid light-emitting diode chip for backlight unit D because of the overheated situation that burns out.
In sum, light emitting diode construction of the present utility model is when luminous, form continuous light-emitting zone, and the situation of not having blanking bar and optical attenuation takes place, and the utility model sees through the direct packaging technology of chip and utilizes the mode of pressing mold, so that the utility model can shorten its process time effectively, and can produce in a large number.Moreover, because LED encapsulation construction of the present utility model under upright situation, can produce the effect of lateral direction light emission.Therefore, the utility model not only can produce the function of side direction light projector, more can turn round and look at the radiating effect that is applied in the thin case.
The above only is the detailed description and the accompanying drawing of the utility model specific embodiment one of most preferably, but feature of the present utility model is not limited thereto, be not in order to restriction the utility model, all scopes of the present utility model should be as the criterion with the appended scope that claim was defined, every embodiment that accords with the spirit variation similar of the utility model claims with it, all should be contained in the scope of the present utility model, those skilled in the art in field of the present utility model, can think easily and variation or modify all can be encompassed in the following claim of the present utility model.
Claims (10)
1, a kind of matsurface that sees through is characterized in that to produce the LED encapsulation construction of lateral direction light emission, comprising:
Base board unit;
Luminescence unit, it has a plurality of light-emitting diode chip for backlight unit that are arranged at electrically on this base board unit; And
The packing colloid unit, it has a plurality of half packing colloids that are covered in respectively on the described light-emitting diode chip for backlight unit, and wherein the upper surface of each half packing colloid and front surface have hemicolloid cambered surface and coarse colloid exiting surface respectively.
2, the matsurface that sees through as claimed in claim 1 is characterized in that to produce the LED encapsulation construction of lateral direction light emission: this base board unit has substrate body and is formed at positive conductive traces and negative pole conductive traces on this substrate body respectively.
3, the matsurface that sees through as claimed in claim 2 is to produce the LED encapsulation construction of lateral direction light emission, it is characterized in that: this substrate body comprises metal level and is formed in bakelite layer on this metal level, and this positive and negative electrode conductive traces is aluminum steel road or silver-colored circuit.
4, the matsurface that sees through as claimed in claim 2 is to produce the LED encapsulation construction of lateral direction light emission, and it is characterized in that: each light-emitting diode chip for backlight unit has the positive terminal and the negative pole end of the positive and negative electrode conductive traces that is electrically connected on this base board unit respectively.
5, the matsurface that sees through as claimed in claim 1 is to produce the LED encapsulation construction of lateral direction light emission, and it is characterized in that: each half packing colloid is for to be mixed the fluorescent colloid that forms by silica gel with fluorescent material.
6, the matsurface that sees through as claimed in claim 1 is to produce the LED encapsulation construction of lateral direction light emission, and it is characterized in that: each half packing colloid is for to be mixed the fluorescent colloid that forms by epoxy resin with fluorescent material.
7, the matsurface that sees through as claimed in claim 1 is to produce the LED encapsulation construction of lateral direction light emission, it is characterized in that, further comprise: frame unit, it is covered on this substrate body for one deck and coats the ccf layer that each half packing colloid only exposes described coarse colloid exiting surface.
8, the matsurface that sees through as claimed in claim 7 is to produce the LED encapsulation construction of lateral direction light emission, and it is characterized in that: this ccf layer is light tight ccf layer.
9, the matsurface that sees through as claimed in claim 1 is to produce the LED encapsulation construction of lateral direction light emission, it is characterized in that, further comprise: frame unit, it has and a plurality ofly covers described packing colloid respectively and only expose the framework of the coarse colloid exiting surface of each half packing colloid, and wherein said framework is arranged on this substrate body separated from one anotherly.
10, the matsurface that sees through as claimed in claim 9 is to produce the LED encapsulation construction of lateral direction light emission, and it is characterized in that: described framework is light tight framework.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200084844U CN201185188Y (en) | 2008-03-24 | 2008-03-24 | LED chip packaging structure capable of generating crossrange light permeating a rugged surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200084844U CN201185188Y (en) | 2008-03-24 | 2008-03-24 | LED chip packaging structure capable of generating crossrange light permeating a rugged surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201185188Y true CN201185188Y (en) | 2009-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200084844U Expired - Fee Related CN201185188Y (en) | 2008-03-24 | 2008-03-24 | LED chip packaging structure capable of generating crossrange light permeating a rugged surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201185188Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430341B (en) * | 2020-04-28 | 2023-09-22 | 广东三橙电子科技有限公司 | Liquid crystal backlight display module packaging method and liquid crystal backlight display module |
-
2008
- 2008-03-24 CN CNU2008200084844U patent/CN201185188Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430341B (en) * | 2020-04-28 | 2023-09-22 | 广东三橙电子科技有限公司 | Liquid crystal backlight display module packaging method and liquid crystal backlight display module |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090121 Termination date: 20130324 |