CN201174418Y - Half-modular chip integrated waveguide single layered stereo power distributor - Google Patents
Half-modular chip integrated waveguide single layered stereo power distributor Download PDFInfo
- Publication number
- CN201174418Y CN201174418Y CNU2008200337424U CN200820033742U CN201174418Y CN 201174418 Y CN201174418 Y CN 201174418Y CN U2008200337424 U CNU2008200337424 U CN U2008200337424U CN 200820033742 U CN200820033742 U CN 200820033742U CN 201174418 Y CN201174418 Y CN 201174418Y
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- metal patch
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- slab
- substrate integrated
- power splitter
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Abstract
The utility model discloses a half-model substrate integrated waveguide single-layer stereoscopic power splitter. The edges of two sides of a first rectangular metal patch arranged in the middle of the power splitter are respectively connected with a first tapered metal patch and a second tapered metal patch, and the first rectangular metal patch covers one surface of a dielectric slab; the edges of a second rectangular metal patch is connected with the wide edge of a third tapered metal patch, and the second rectangular metal patch covers the other surface of the dielectric slab; the third tapered metal patch and the second tapered metal patch are in up-down symmetry; the first and second rectangular metal patches are connected through a row of metalized through holes passing through the dielectric slab, and a metal separator is arranged in the center of the inside of the dielectric slab. The power splitter works on an X wave band from 9 GHz to 12 GHz, has the characteristics of high Q value and low loss, realizes half-model substrate integrated waveguide on the basis of the dielectric substrate integrated waveguide, is only one fourth the volume of the prior substrate integrated waveguide, has no change in thickness, and is easier to integrate in microwave and millimeter wave components and systems.
Description
Technical field
The utility model is used for the design of microwave and millimeter wave assembly and system, the three-dimensional power splitter of particularly a kind of half module substrate integrated wave guide individual layer.
Background technology
The microwave and millimeter wave power splitter has obtained a large amount of application in the feeder line of microwave and millimeter wave antenna and millimeter wave instrument, it is a critical component in the feeder system, particularly in the feed system of microwave and millimeter wave aerial array, need use low-loss, wide band power splitter.Microstrip power divider commonly used its characteristic on centre frequency is comparatively desirable, but in case frequency deviation takes place, and the performance of whole power splitter will variation, thereby influences the performance of whole system.Utilize substrate integrated waveguide technology can produce high Q value, low-loss, wide band power divider; and cut down finished cost and technology difficulty; and half module substrate integrated wave guide structure on this basis more can reduce the volume of half, also more is applicable to the design of microwave and millimeter wave assembly and system.
The utility model content
The purpose of this utility model is to provide a kind of 9GHz of being operated in to the three-dimensional power splitter of the novel half module substrate integrated wave guide on the X-band of 12GHz.
The technical solution that realizes the utility model purpose is: the three-dimensional power splitter of a kind of half module substrate integrated wave guide individual layer, the dual-side of the first rectangle metal patch in the middle of being arranged on is overlying on the one side of dielectric-slab along keeping to the side to link to each other with first and second cone-shaped metal paster respectively; The edge of the second rectangle metal patch keeps to the side to link to each other with the broadside of third hand tap shape metal patch, is overlying on the another side of dielectric-slab, and this third hand tap shape metal patch and the second cone-shaped metal paster are symmetry up and down; First and second rectangle metal patch links to each other by the delegation's plated-through hole that passes dielectric-slab, and in the middle, inside of dielectric-slab metal partion (metp) is set.
The utility model compared with prior art, its remarkable advantage is: (1) is operated in 9GHz to the X-band of 12GHz, has high Q value, low-loss characteristics, has realized half module substrate integrated wave guide on the basis of dielectric substrate integrated waveguide.(2) volume of the three-dimensional power splitter of half module substrate integrated wave guide has only 1/4th of traditional substrate integration wave-guide plane power splitter, and thickness is constant, easier being integrated in microwave and millimeter wave assembly and the system.(3) simple in structure, easy to process, with low cost, bandwidth of operation is broad also, has stronger Practical Performance, is applicable to the design of microwave and millimeter wave assembly and system.
Below in conjunction with accompanying drawing the utility model is described in further detail.
Description of drawings
Fig. 1 is the vertical view according to the device that the utility model proposes.
Fig. 2 is the plan view according to the device that the utility model proposes.
Fig. 3 is the utility model plated-through hole schematic diagram.
Embodiment
In conjunction with Fig. 1, the three-dimensional power splitter of the utility model half module substrate integrated wave guide individual layer, the dual-side of the first rectangle metal patch 1 in the middle of being arranged on is overlying on the one side of dielectric-slab 2 along keeping to the side to link to each other with first and second cone- shaped metal paster 5,6 respectively; The edge of the second rectangle metal patch 3 keeps to the side to link to each other with the broadside of third hand tap shape metal patch 7, is overlying on the another side of dielectric-slab 2, and this third hand tap shape metal patch 7 and the second cone-shaped metal paster 6 are symmetry up and down; First and second rectangle metal patch 1,3 links to each other by the delegation's plated-through hole that passes dielectric-slab 2, and in the middle, inside of dielectric-slab 2 metal partion (metp) 4 is set.
In conjunction with Fig. 1, Fig. 2, the three-dimensional power splitter of the utility model half module substrate integrated wave guide individual layer, dielectric-slab 2 length L 1 are 88.5mm, width W 2 is 10-12mm; Metal partion (metp) 4 length L 2 are 45-48mm, and the first rectangle metal patch, 1 length L 3 is 48.5-50mm; First length L 4 to third hand tap shape metal patch 5,6,7 all is 14mm, and two parallel edges W3 and W4 are respectively 3.3-3.5mm and 1.5-1.6mm; Plated-through hole is 7.2-7.5mm to the first rectangle metal patch, 1 distal edge vertical range W1; The length of the second rectangle metal patch 3 is 68.5-69mm, and width is 10-12mm, and dielectric-slab 2 thickness h are 0.5mm, and dielectric constant is 2.2; The metal throuth hole diameter d is 2mm, and pitch of holes S is 3.5-3.7mm.
Embodiment: in conjunction with Fig. 1, Fig. 2, Fig. 3, be example at the three-dimensional power splitter of the individual layer half module substrate integrated wave guide of 9-12GHz, describe structure of the present utility model in detail with working frequency range.
Thickness h is to insert the metal partion (metp) 4 that a block length is 45mm on one side along it in the dielectric-slab 2 of 0.5mm, and the length of dielectric-slab 2 is 88.5mm, and the width of dielectric-slab 2 and metal partion (metp) 4 all is 10mm.The one side of dielectric-slab 2 is a metal patch, it is made up of one first rectangle metal patch 1, the first cone-shaped metal paster 5, the second cone-shaped metal paster 6 and two strip metal conduction bands, the length of the first rectangle metal patch 1 is 48.5mm, width is 10mm, the first cone-shaped metal paster 5 and the second cone-shaped metal paster 6 measure-alike, article two, parallel edges is respectively 1.5mm and 3.3mm, and length is 14mm.The another side of dielectric-slab 2 is covered with the second rectangle metal patch 3 and third hand tap shape metal patch 7, and wherein the size of third hand tap shape paster 7 is identical with the second taper paster 6, and the length of the second rectangle metal patch 3 is 68.5mm, and width is 10mm.The first rectangle metal patch 1 that is positioned at dielectric-slab 2 both sides links to each other by plated-through hole with the second rectangle metal patch 3, the metal aperture center is 7.2mm to the first rectangle metal patch, 1 distal edge distance, is arranged in parallel along the first rectangle metal patch, 1 long axis direction.The metal aperture diameter is 2mm, and pitch of holes is 3.5mm.
Signal is from the input input on the left side, and the metal partion (metp) 4 by the middle in half module substrate integrated wave guide is divided into two paths of signals, respectively from two output outputs up and down, merit branches such as realization.The medium dielectric constant of selecting for use is 2.2, and the result shows that in the 9.6GHz-11.7GHz frequency range, S11 approaches-20dB, the transmission coefficient of two output ports is all approaching-and 3dB, relative bandwidth is near 20%.
Claims (2)
1, the three-dimensional power splitter of a kind of half module substrate integrated wave guide individual layer, it is characterized in that: the dual-side of the first rectangle metal patch [1] in the middle of being arranged on is overlying on the one side of dielectric-slab [2] along keeping to the side to link to each other with first and second cone-shaped metal paster [5,6] respectively; The edge of the second rectangle metal patch [3] keeps to the side to link to each other with the broadside of third hand tap shape metal patch [7], is overlying on the another side of dielectric-slab [2], and this third hand tap shape metal patch [7] is symmetry up and down with the second cone-shaped metal paster [6]; First and second rectangle metal patch [1,3] links to each other by the delegation's plated-through hole that passes dielectric-slab [2], and in the middle, inside of dielectric-slab [2] metal partion (metp) [4] is set.
2, the three-dimensional power splitter of half module substrate integrated wave guide individual layer according to claim 1, it is characterized in that: dielectric-slab [2] length L 1 is 88.5mm, and width W 2 is 10-12mm; Metal partion (metp) [4] length L 2 is 45-48mm, and first rectangle metal patch [1] length L 3 is 48.5-50mm; First length L 4 to third hand tap shape metal patch [5,6,7] all is 14mm, and two parallel edges W3 and W4 are respectively 3.3-3.5mm and 1.5-1.6mm; Plated-through hole is 7.2-7.5mm to first rectangle metal patch [1] the distal edge vertical range W1; The length of the second rectangle metal patch [3] is 68.5-69mm, and width is 10-12mm, and dielectric-slab [2] thickness h is 0.5mm, and dielectric constant is 2.2; The metal throuth hole diameter d is 2mm, and pitch of holes S is 3.5-3.7mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200337424U CN201174418Y (en) | 2008-04-03 | 2008-04-03 | Half-modular chip integrated waveguide single layered stereo power distributor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200337424U CN201174418Y (en) | 2008-04-03 | 2008-04-03 | Half-modular chip integrated waveguide single layered stereo power distributor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201174418Y true CN201174418Y (en) | 2008-12-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200337424U Expired - Fee Related CN201174418Y (en) | 2008-04-03 | 2008-04-03 | Half-modular chip integrated waveguide single layered stereo power distributor |
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| CN (1) | CN201174418Y (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361150A (en) * | 2011-09-06 | 2012-02-22 | 电子科技大学 | Semimodule substrate integrated waveguide and grooved wire mixed directional coupler |
| CN103682538A (en) * | 2013-11-20 | 2014-03-26 | 东南大学 | Modified half-mode substrate integrated waveguide inductive band filter |
| CN103682533A (en) * | 2013-11-20 | 2014-03-26 | 东南大学 | Microwave and millimeter wave filter |
| CN104810590A (en) * | 2015-04-23 | 2015-07-29 | 电子科技大学 | 3dB power divider of X wave band SIW micro-strip output structure |
| CN106207365A (en) * | 2016-08-30 | 2016-12-07 | 电子科技大学 | A kind of novel equalizer based on slow-wave structure |
-
2008
- 2008-04-03 CN CNU2008200337424U patent/CN201174418Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361150A (en) * | 2011-09-06 | 2012-02-22 | 电子科技大学 | Semimodule substrate integrated waveguide and grooved wire mixed directional coupler |
| CN103682538A (en) * | 2013-11-20 | 2014-03-26 | 东南大学 | Modified half-mode substrate integrated waveguide inductive band filter |
| CN103682533A (en) * | 2013-11-20 | 2014-03-26 | 东南大学 | Microwave and millimeter wave filter |
| CN104810590A (en) * | 2015-04-23 | 2015-07-29 | 电子科技大学 | 3dB power divider of X wave band SIW micro-strip output structure |
| CN106207365A (en) * | 2016-08-30 | 2016-12-07 | 电子科技大学 | A kind of novel equalizer based on slow-wave structure |
| CN106207365B (en) * | 2016-08-30 | 2018-10-16 | 电子科技大学 | A kind of novel balanced device based on slow-wave structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081231 Termination date: 20100403 |