CN201174418Y - Half-mode substrate integrated waveguide single-layer three-dimensional power divider - Google Patents

Half-mode substrate integrated waveguide single-layer three-dimensional power divider Download PDF

Info

Publication number
CN201174418Y
CN201174418Y CNU2008200337424U CN200820033742U CN201174418Y CN 201174418 Y CN201174418 Y CN 201174418Y CN U2008200337424 U CNU2008200337424 U CN U2008200337424U CN 200820033742 U CN200820033742 U CN 200820033742U CN 201174418 Y CN201174418 Y CN 201174418Y
Authority
CN
China
Prior art keywords
metal patch
substrate integrated
integrated waveguide
dielectric
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNU2008200337424U
Other languages
Chinese (zh)
Inventor
唐万春
陈如山
丁大志
樊振宏
徐光�
王丹阳
许小卫
王晓科
林叶嵩
温中会
钟群花
蒋石磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University of Science and Technology
Original Assignee
Nanjing University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University of Science and Technology filed Critical Nanjing University of Science and Technology
Priority to CNU2008200337424U priority Critical patent/CN201174418Y/en
Application granted granted Critical
Publication of CN201174418Y publication Critical patent/CN201174418Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Aerials With Secondary Devices (AREA)

Abstract

本实用新型公开了一种半模基片集成波导单层立体功分器。该功分器设置在中间的第一长方形金属贴片的两侧边沿靠边分别与第一、二锥形金属贴片相连,覆于介质板的一面;第二长方形金属贴片的边沿靠边与第三锥形金属贴片的宽边相连,覆于介质板的另一面,该第三锥形金属贴片与第二锥形金属贴片呈上下对称;第一、二长方形金属贴片通过穿过介质板的一行金属化通孔相连,并在介质板的内部正中间设置金属隔板。本实用新型工作在9GHz到12GHz的X波段上,具有高Q值、低损耗的特点,在介质基片集成波导的基础上实现了半模基片集成波导;体积只有传统的基片集成波导平面功分器的四分之一,而厚度不变,更容易集成于微波毫米波组件与系统中。

Figure 200820033742

The utility model discloses a half-mode substrate integrated waveguide single-layer three-dimensional power divider. The power divider is arranged in the middle of both sides of the first rectangular metal patch to connect with the first and second tapered metal patches respectively, covering one side of the medium plate; the edge of the second rectangular metal patch is connected to the first The wide sides of the three-cone-shaped metal patch are connected and covered on the other side of the dielectric board. The third conical metal patch is symmetrical to the second conical metal patch; the first and second rectangular metal patches pass through A row of metallized through holes of the dielectric board are connected, and a metal partition is arranged in the middle of the dielectric board. The utility model works in the X-band of 9GHz to 12GHz, has the characteristics of high Q value and low loss, and realizes the half-mode substrate integrated waveguide on the basis of the dielectric substrate integrated waveguide; the volume is only the traditional substrate integrated waveguide plane A quarter of the power divider, but the thickness remains the same, it is easier to integrate into microwave and millimeter wave components and systems.

Figure 200820033742

Description

The three-dimensional power splitter of half module substrate integrated wave guide individual layer
Technical field
The utility model is used for the design of microwave and millimeter wave assembly and system, the three-dimensional power splitter of particularly a kind of half module substrate integrated wave guide individual layer.
Background technology
The microwave and millimeter wave power splitter has obtained a large amount of application in the feeder line of microwave and millimeter wave antenna and millimeter wave instrument, it is a critical component in the feeder system, particularly in the feed system of microwave and millimeter wave aerial array, need use low-loss, wide band power splitter.Microstrip power divider commonly used its characteristic on centre frequency is comparatively desirable, but in case frequency deviation takes place, and the performance of whole power splitter will variation, thereby influences the performance of whole system.Utilize substrate integrated waveguide technology can produce high Q value, low-loss, wide band power divider; and cut down finished cost and technology difficulty; and half module substrate integrated wave guide structure on this basis more can reduce the volume of half, also more is applicable to the design of microwave and millimeter wave assembly and system.
The utility model content
The purpose of this utility model is to provide a kind of 9GHz of being operated in to the three-dimensional power splitter of the novel half module substrate integrated wave guide on the X-band of 12GHz.
The technical solution that realizes the utility model purpose is: the three-dimensional power splitter of a kind of half module substrate integrated wave guide individual layer, the dual-side of the first rectangle metal patch in the middle of being arranged on is overlying on the one side of dielectric-slab along keeping to the side to link to each other with first and second cone-shaped metal paster respectively; The edge of the second rectangle metal patch keeps to the side to link to each other with the broadside of third hand tap shape metal patch, is overlying on the another side of dielectric-slab, and this third hand tap shape metal patch and the second cone-shaped metal paster are symmetry up and down; First and second rectangle metal patch links to each other by the delegation's plated-through hole that passes dielectric-slab, and in the middle, inside of dielectric-slab metal partion (metp) is set.
The utility model compared with prior art, its remarkable advantage is: (1) is operated in 9GHz to the X-band of 12GHz, has high Q value, low-loss characteristics, has realized half module substrate integrated wave guide on the basis of dielectric substrate integrated waveguide.(2) volume of the three-dimensional power splitter of half module substrate integrated wave guide has only 1/4th of traditional substrate integration wave-guide plane power splitter, and thickness is constant, easier being integrated in microwave and millimeter wave assembly and the system.(3) simple in structure, easy to process, with low cost, bandwidth of operation is broad also, has stronger Practical Performance, is applicable to the design of microwave and millimeter wave assembly and system.
Below in conjunction with accompanying drawing the utility model is described in further detail.
Description of drawings
Fig. 1 is the vertical view according to the device that the utility model proposes.
Fig. 2 is the plan view according to the device that the utility model proposes.
Fig. 3 is the utility model plated-through hole schematic diagram.
Embodiment
In conjunction with Fig. 1, the three-dimensional power splitter of the utility model half module substrate integrated wave guide individual layer, the dual-side of the first rectangle metal patch 1 in the middle of being arranged on is overlying on the one side of dielectric-slab 2 along keeping to the side to link to each other with first and second cone- shaped metal paster 5,6 respectively; The edge of the second rectangle metal patch 3 keeps to the side to link to each other with the broadside of third hand tap shape metal patch 7, is overlying on the another side of dielectric-slab 2, and this third hand tap shape metal patch 7 and the second cone-shaped metal paster 6 are symmetry up and down; First and second rectangle metal patch 1,3 links to each other by the delegation's plated-through hole that passes dielectric-slab 2, and in the middle, inside of dielectric-slab 2 metal partion (metp) 4 is set.
In conjunction with Fig. 1, Fig. 2, the three-dimensional power splitter of the utility model half module substrate integrated wave guide individual layer, dielectric-slab 2 length L 1 are 88.5mm, width W 2 is 10-12mm; Metal partion (metp) 4 length L 2 are 45-48mm, and the first rectangle metal patch, 1 length L 3 is 48.5-50mm; First length L 4 to third hand tap shape metal patch 5,6,7 all is 14mm, and two parallel edges W3 and W4 are respectively 3.3-3.5mm and 1.5-1.6mm; Plated-through hole is 7.2-7.5mm to the first rectangle metal patch, 1 distal edge vertical range W1; The length of the second rectangle metal patch 3 is 68.5-69mm, and width is 10-12mm, and dielectric-slab 2 thickness h are 0.5mm, and dielectric constant is 2.2; The metal throuth hole diameter d is 2mm, and pitch of holes S is 3.5-3.7mm.
Embodiment: in conjunction with Fig. 1, Fig. 2, Fig. 3, be example at the three-dimensional power splitter of the individual layer half module substrate integrated wave guide of 9-12GHz, describe structure of the present utility model in detail with working frequency range.
Thickness h is to insert the metal partion (metp) 4 that a block length is 45mm on one side along it in the dielectric-slab 2 of 0.5mm, and the length of dielectric-slab 2 is 88.5mm, and the width of dielectric-slab 2 and metal partion (metp) 4 all is 10mm.The one side of dielectric-slab 2 is a metal patch, it is made up of one first rectangle metal patch 1, the first cone-shaped metal paster 5, the second cone-shaped metal paster 6 and two strip metal conduction bands, the length of the first rectangle metal patch 1 is 48.5mm, width is 10mm, the first cone-shaped metal paster 5 and the second cone-shaped metal paster 6 measure-alike, article two, parallel edges is respectively 1.5mm and 3.3mm, and length is 14mm.The another side of dielectric-slab 2 is covered with the second rectangle metal patch 3 and third hand tap shape metal patch 7, and wherein the size of third hand tap shape paster 7 is identical with the second taper paster 6, and the length of the second rectangle metal patch 3 is 68.5mm, and width is 10mm.The first rectangle metal patch 1 that is positioned at dielectric-slab 2 both sides links to each other by plated-through hole with the second rectangle metal patch 3, the metal aperture center is 7.2mm to the first rectangle metal patch, 1 distal edge distance, is arranged in parallel along the first rectangle metal patch, 1 long axis direction.The metal aperture diameter is 2mm, and pitch of holes is 3.5mm.
Signal is from the input input on the left side, and the metal partion (metp) 4 by the middle in half module substrate integrated wave guide is divided into two paths of signals, respectively from two output outputs up and down, merit branches such as realization.The medium dielectric constant of selecting for use is 2.2, and the result shows that in the 9.6GHz-11.7GHz frequency range, S11 approaches-20dB, the transmission coefficient of two output ports is all approaching-and 3dB, relative bandwidth is near 20%.

Claims (2)

1、一种半模基片集成波导单层立体功分器,其特征在于:设置在中间的第一长方形金属贴片[1]的两侧边沿靠边分别与第一、二锥形金属贴片[5、6]相连,覆于介质板[2]的一面;第二长方形金属贴片[3]的边沿靠边与第三锥形金属贴片[7]的宽边相连,覆于介质板[2]的另一面,该第三锥形金属贴片[7]与第二锥形金属贴片[6]呈上下对称;第一、二长方形金属贴片[1、3]通过穿过介质板[2]的一行金属化通孔相连,并在介质板[2]的内部正中间设置金属隔板[4]。1. A half-mode substrate integrated waveguide single-layer three-dimensional power divider is characterized in that: the two sides of the first rectangular metal patch [1] arranged in the middle are edged to the edge respectively with the first and second tapered metal patches [5,6] are connected and covered on one side of the medium plate [2]; the edge of the second rectangular metal patch [3] is connected to the wide side of the third tapered metal patch [7] and covered on the medium plate [ 2] on the other side, the third tapered metal patch [7] is vertically symmetrical to the second tapered metal patch [6]; the first and second rectangular metal patches [1, 3] pass through the dielectric plate A row of metallized through holes in [2] are connected, and a metal partition [4] is set in the middle of the dielectric board [2]. 2、根据权利要求1所述的半模基片集成波导单层立体功分器,其特征在于:介质板[2]长度L1为88.5mm,宽度W2为10-12mm;金属隔板[4]长度L2为45-48mm,第一长方形金属贴片[1]长度L3为48.5-50mm;第一至第三锥形金属贴片[5、6、7]的长度L4都为14mm,两条平行边W3和W4分别为3.3-3.5mm和1.5-1.6mm;金属化通孔到第一长方形金属贴片[1]远边垂直距离W1为7.2-7.5mm;第二长方形金属贴片[3]的长度为68.5-69mm,宽度为10-12mm,介质板[2]厚度h为0.5mm,介电常数为2.2;金属通孔直径d为2mm,孔间距S为3.5-3.7mm。2. The half-mode substrate integrated waveguide single-layer three-dimensional power divider according to claim 1, characterized in that: the length L1 of the dielectric plate [2] is 88.5mm, and the width W2 is 10-12mm; the metal partition [4] The length L2 is 45-48mm, the length L3 of the first rectangular metal patch [1] is 48.5-50mm; the length L4 of the first to third tapered metal patches [5, 6, 7] is 14mm, and the two parallel The sides W3 and W4 are 3.3-3.5mm and 1.5-1.6mm respectively; the vertical distance W1 from the metallized through hole to the far side of the first rectangular metal patch [1] is 7.2-7.5mm; the second rectangular metal patch [3] The length is 68.5-69mm, the width is 10-12mm, the thickness h of the dielectric plate [2] is 0.5mm, and the dielectric constant is 2.2; the diameter d of the metal through hole is 2mm, and the hole spacing S is 3.5-3.7mm.
CNU2008200337424U 2008-04-03 2008-04-03 Half-mode substrate integrated waveguide single-layer three-dimensional power divider Expired - Fee Related CN201174418Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2008200337424U CN201174418Y (en) 2008-04-03 2008-04-03 Half-mode substrate integrated waveguide single-layer three-dimensional power divider

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2008200337424U CN201174418Y (en) 2008-04-03 2008-04-03 Half-mode substrate integrated waveguide single-layer three-dimensional power divider

Publications (1)

Publication Number Publication Date
CN201174418Y true CN201174418Y (en) 2008-12-31

Family

ID=40201546

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2008200337424U Expired - Fee Related CN201174418Y (en) 2008-04-03 2008-04-03 Half-mode substrate integrated waveguide single-layer three-dimensional power divider

Country Status (1)

Country Link
CN (1) CN201174418Y (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361150A (en) * 2011-09-06 2012-02-22 电子科技大学 Semimodule substrate integrated waveguide and grooved wire mixed directional coupler
CN103682533A (en) * 2013-11-20 2014-03-26 东南大学 Microwave and millimeter wave filter
CN103682538A (en) * 2013-11-20 2014-03-26 东南大学 Modified half-mode substrate integrated waveguide inductive band filter
CN104810590A (en) * 2015-04-23 2015-07-29 电子科技大学 3dB power divider of X wave band SIW micro-strip output structure
CN106207365A (en) * 2016-08-30 2016-12-07 电子科技大学 A kind of novel equalizer based on slow-wave structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361150A (en) * 2011-09-06 2012-02-22 电子科技大学 Semimodule substrate integrated waveguide and grooved wire mixed directional coupler
CN103682533A (en) * 2013-11-20 2014-03-26 东南大学 Microwave and millimeter wave filter
CN103682538A (en) * 2013-11-20 2014-03-26 东南大学 Modified half-mode substrate integrated waveguide inductive band filter
CN104810590A (en) * 2015-04-23 2015-07-29 电子科技大学 3dB power divider of X wave band SIW micro-strip output structure
CN106207365A (en) * 2016-08-30 2016-12-07 电子科技大学 A kind of novel equalizer based on slow-wave structure
CN106207365B (en) * 2016-08-30 2018-10-16 电子科技大学 A kind of novel balanced device based on slow-wave structure

Similar Documents

Publication Publication Date Title
CN107275768A (en) The low sidelobe antenna array of work(point feeding network is not waited based on micro-strip ridge gap waveguide
CN102810704B (en) A fully-mode double-ridge substrate integrated waveguide with balanced microstrip line transition
CN105190998A (en) Array antenna
CN100449864C (en) Substrate Integrated Waveguide Comb Power Divider
CN201174418Y (en) Half-mode substrate integrated waveguide single-layer three-dimensional power divider
CN105789802B (en) A kind of ultra wide band balun based on novel interconnection architecture
CN101232126A (en) Substrate Integrated Waveguide Resonant Slot Array Circularly Polarized Antenna
CN103943928B (en) A Planar Balun with Filtering and Power Dividing Characteristics
CN108777343A (en) Substrate integration wave-guide transmission structure, antenna structure and connection method
CN102709658A (en) Half mode double-ridge substrate integrated waveguide with transitional balanced micro-strip lines
CN112768863A (en) HMSIW-based K-waveband novel power divider and design method thereof
CN201156587Y (en) Circularly Polarized Antenna with Substrate Integrated Waveguide Diagonal Slot Array
CN105655679A (en) Quasi-planar high-isolation multi-path power divider
CN201156581Y (en) 45-degree linearly polarized antenna with substrate-integrated waveguide slanted slot array
CN103000977A (en) Broadband novel microstrip line three-way power divider
CN2888662Y (en) High-performance waveguide filter with integrated microwave/millimeter wave substrate
CN201226370Y (en) Integration waveguide six-port circuit for half die basis sheet
CN201174416Y (en) Substrate-integrated waveguide power splitter with step transition
CN1825677A (en) Microwave millimeter wave substrate integrated waveguide E-plane inductive band filter
CN202231136U (en) Coplanar waveguide microwave delay line
CN208173765U (en) Substrate integration wave-guide transmission structure, antenna structure
CN104617366B (en) The road power splitter of directrix plane high isolation four based on capacitance compensation
CN204391233U (en) A kind of ultra wide band balun based on novel interconnect architecture
CN104091991B (en) A multi-channel substrate integrated waveguide power splitter
CN100384015C (en) Balanced feed broadband substrate integrated waveguide slot array antenna unit

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081231

Termination date: 20100403