CN201158701Y - Coupling magnetic field assisted electric arc ion plating deposition device - Google Patents
Coupling magnetic field assisted electric arc ion plating deposition device Download PDFInfo
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- CN201158701Y CN201158701Y CNU2008200101407U CN200820010140U CN201158701Y CN 201158701 Y CN201158701 Y CN 201158701Y CN U2008200101407 U CNU2008200101407 U CN U2008200101407U CN 200820010140 U CN200820010140 U CN 200820010140U CN 201158701 Y CN201158701 Y CN 201158701Y
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Abstract
The utility model relates to a coupling magnetic filed auxiliary arc ion plating deposition device, belonging to the film making field, which is used to increase the deposition speed and the deposition evenness of films, to reduce the target large granular emission, and to increase the target etching evenness. The arc ion plating deposition device of the utility model is provided with two sets of magnetic field generating devices, wherein one set is arranged on the back of target material and the other set is arranged in a vacuum chamber, and a basal body can be assisted to deposit through the coupling magnetic field generated by the coupled two sets of magnetic field generating devices. The utility model solves the unevenness distribution of plasma in transmission space in the traditional technique through the coupling magnetic field which is generated by the coupled two sets of the magnetic field generating devices, and increases the deposition speed and the deposition evenness of the films, and simultaneously reduces the emission of target granules and large granular content in the film, increases the quality of the film, expands the range of making technique parameter, and provides conditions for making films with different properties.
Description
Technical field
The utility model relates to the film preparation field, and the auxiliary electric arc ion-plating deposition device of specifically a kind of coupled magnetic field in order to improve depositing of thin film speed and deposition uniformity, reduces the oarse-grained emission of target, improves the target etching homogeneity.
Background technology
Arc ion plating is one of most important technology in industrial plated film production and the scientific research, because it is simple in structure, ionization level height (70%-80%), the projectile energy height, diffraction is good, can realize series of advantages such as low temperature depositing, arc ion plating (aip) is rapidly developed and obtains widespread use, show very big economic benefit and prospects for commercial application.
Vacuum arc discharge is low-voltage, high-current discharge, and the behavior of vacuum arc is moved about fast by cathode surface is many, and highly Ming Liang cathode spot is controlled.The motion of cathode spot and arc root has determined whole electric Arc Motion, and the order of adjacent arcs spot is lighted and extinguished the motion that has constituted the arc spot.Although the process to arc spot internal structure does not also have definite understanding, in order better to improve the quality of deposit film and effectively to utilize target, improve discharge stability, must reasonably control the motion of arc spot and the transmission of plasma body.
Present arc ion plating (aip) mainly is to apply the motion that the arc spot is controlled in magnetic field near target, improves discharge stability and target etching rate.Mainly contain under the small size cylindrical target and add axial magnetic field, big planar target applies arch magnetic field.Because arc ion plating mainly deposits required film by the discharge of the cathode spot on the target surface, therefore be a kind of point source, though near these traditional simple methods that apply magnetic field target surface can be controlled the motion of arc spot at target surface effectively, but do not solve the ununiformity that plasma distributes at transmission space, simultaneously, along with the increase of magneticstrength, caused part ion to run off along with the distribution campaign of target surrounding magnetic field, caused the decline of matrix place ion density.And etching forms the etching track easily on target surface for a long time, causes the inhomogeneous of target etching.
Though arc ion plating (aip) has many good qualities,, had a strong impact on the performance and the life-span of coating and film owing to oarse-grained existence in the arc ion plating.Therefore the relevant influence on development that how to solve macrobead problem anticathode electric arc in the cathode arc plating is very big, becomes the main topic of later stage development, also becomes the principal element of restriction arc ions range of application.What application was more at present is the magnetic filtering technique, but the magnetic filtering technique has reduced isoionic transmission efficiency, has reduced sedimentation rate, needs to increase extra equipment simultaneously, the cost height.
The utility model content
The purpose of this utility model is to provide a kind of novel coupled magnetic field assistant electric arc ion plating deposition device, in order to improve depositing of thin film speed and deposition uniformity, reduce oarse-grained content in the film, improve film quality, reduce the oarse-grained emission of target, improve the target etching homogeneity.
To achieve these goals, the technical solution of the utility model is:
The utility model coupled magnetic field assistant electric arc ion plating deposition device, the electric arc ion-plating deposition device is provided with two cover field generator for magnetic, one cover is positioned over the target back, another set of being positioned in the vacuum chamber deposits matrix by the coupled magnetic field of two cover coupled field generator for magnetic generations is auxiliary.
Described coupled magnetic field assistant electric arc ion plating deposition device, the field generator for magnetic that is positioned over the target back is for installing the solenoid or the annular permanent magnet of nickel plating pure iron in the centre.
Described coupled magnetic field assistant electric arc ion plating deposition device, the field generator for magnetic that is positioned in the vacuum chamber is that a coupling strengthens magneticfield coil, coupling enhancing magneticfield coil is positioned over matrix one side or the opposite side in the vacuum chamber.
Described coupled magnetic field assistant electric arc ion plating deposition device, the field generator for magnetic that is positioned in the vacuum chamber is that two couplings strengthen magneticfield coil, coupling enhancing magneticfield coil is positioned over the matrix one or both sides in the vacuum chamber respectively.
Described coupled magnetic field assistant electric arc ion plating deposition device, the target periphery that is positioned in the vacuum chamber is provided with magnetic guiding loop.
Described coupled magnetic field assistant electric arc ion plating deposition device, it is identical with the polarity of the magnetic field of the field generator for magnetic generation that is positioned over the target back to be positioned over the polarity of the magnetic field that the field generator for magnetic of vacuum chamber produces.
Described coupled magnetic field assistant electric arc ion plating deposition device, the current forms of solenoid is direct current, interchange or pulse, size of current is regulated by voltage controller power source.
Described coupled magnetic field assistant electric arc ion plating deposition device, solenoid is coaxial with target, the position of solenoid is adjustable, and the size by the size of regulating solenoid current is regulated magnetic induction density changes polar direction by regulating sense of current.
The utility model adopts the electric arc ion-plating deposition device by target matrix to be deposited, field generator for magnetic is two covers, one cover is positioned over the target back, mainly in order to control the motion of arc spot, an other cover is positioned in the vacuum chamber, mainly in order to the transmission of confining plasma, improves near the ion density of transmission efficiency and matrix, improve near the homogeneity of the ion distribution of matrix, reach the purpose that improves film deposition rate and deposition uniformity.Two cover magnetic field devices are used, and form the coupled magnetic field that distributes from the target to the matrix, reach a kind of mode of deposition away from equilibrium state, improve the quality of deposit film.
Field generator for magnetic of the present utility model has following characteristics:
1. the field generator for magnetic size that is positioned over the target back is less than target diameter (conventional 64mm), directly be immersed in the recirculated cooling water, can use the solenoid of adjustable economize on electricity stream size or use annular permanent magnet, the solenoid center fixed of using in the utility model has the nickel plating pure iron, be used for improving magnetic induction density, the purpose of nickel plating is to prevent that pure iron from getting rusty, and reduces the intensity of magneticinduction.The annular permanent magnet that uses is a neodymium-iron-boron magnetic material, and magnetic is strong.Be with magnetic guiding loop around the target,, improve the movement velocity of arc spot in order to the intensity of the component that increases the target surface transverse magnetic field.
2. be positioned over the field generator for magnetic of target back: the size that the solenoid of the nickel plating pure iron of the high magnetic conduction of use center fixed can be regulated magnetic induction density by the size of regulating winding electric current changes polar direction by regulating sense of current.Use the neodymium iron boron annular permanent magnet can be by changing the intensity that magnetic field is regulated in permanent magnet and the position of target, polar position be difficult for replacing.Recommend under the situation of conditions permit to use the former, the former can improve traditional depositing operation, reduces the particle emission by improving magneticstrength, and logical exchange current can be so that the arc spot in the even etching of whole target surface, improves target utilization.The latter's long-time immersion easily in water coolant demagnetized.
3. the field generator for magnetic size that is positioned over vacuum chamber big (size is per sample made), use be the solenoid that QZY-2 high temperature varnish envelope curve twines, resistant to elevated temperatures glass wool cloth is twined in the coil outside.What coil lead used is higher temperature line, and is with porcelain tube protection.Coil is coaxial with target, and the position of coil can be regulated, and can regulate the size of magnetic induction density by the size of regulating winding electric current, changes polar direction by regulating sense of current.
4. the field generator for magnetic that is positioned over vacuum chamber can be made up of a solenoid or two solenoids.In order to reach different purposes, the position that sample is put can be regulated.For the device of a coil, sample can be positioned over the back of coil, the centre of coil, the front of coil, because the position shape of magnetic line of force is different, can reach the film of preparation different performance.For the device of two coils, sample can be positioned over the centre of the back of two coils, two coils, the front of two coils.
5. it is identical with the polarity of the magnetic field of the field generator for magnetic generation that is positioned over the target back to be positioned over the polarity of the magnetic field that the field generator for magnetic of vacuum chamber produces, the indoor situation of having only a coil of against vacuum, magnetic pole presses S-N-S-N or N-S-N-S distributes, the indoor situation that two coils are arranged of against vacuum, magnetic pole press S-N-S-N-S-N or N-S-N-S-N-S distributes.The polarity of coil can change by regulating sense of current.
6. the field generator for magnetic that is positioned over vacuum chamber can be regulated separately or regulate jointly with the magnetic field that is positioned over the field generator for magnetic of target back; In order to reach different deposition effects, the current forms of solenoid can be a direct current, interchange or pulse, size of current can be regulated by voltage controller power source; Coupled magnetic field assistant depositing device of the present utility model cooperates and is applied to that pulsed bias uses jointly on the sample, can enlarge the scope of adjusting parameter, for the film of preparation different performance provides condition.
The utlity model has following advantage:
1. the utility model has solved conventional arc ion plating ionic medium in the ununiformity that transmission space distributes by the coupled magnetic field that two cover coupled field generator for magnetic produce, and has improved depositing of thin film speed and deposition uniformity.Can reduce simultaneously oarse-grained content in emission of target particulate and the film, improve film quality.Expanded the scope of preparation technology parameter, for the film for preparing different performance provides condition.
2. the motion of arc spot can be controlled in the magnetic field that is positioned over the field generator for magnetic generation of target back in the utility model, cooperate target magnetic guiding loop on every side by the size that increases coil current, can improve the size of target surface transverse magnetic field components, improve the movement velocity of arc spot, reduce oarse-grained emission, by changing the form of coil current, such as indirect current, can make arc spot even etching on whole target surface, improve target utilization.
3. the coupling in two cover magnetic fields is used in the utility model, can improve plasma and distribute at transmission space.Be positioned over the magnetic field size that the field generator for magnetic of vacuum chamber produces by adjusting, can change matrix place ionic density, distribution, change the performance of depositing of thin film speed and film.
4. the preparation effect that sample can reach different putting of different positions in the utility model.The magnetic field configuration of different positions varies in size, ionic movement locus difference, and the performance of deposit film can be different.
In the utility model in being positioned over the field generator for magnetic of vacuum chamber indirect current or pulsed current, can cause the vibration of charged particle at transmission space.Increase the collision between the charged particle, improve ionization level.Simultaneously, can give the macrobead charging of plasma transmission space, under the effect of bias voltage, get rid of the deposition of particle on film.
6. coupled magnetic field assistant depositing device of the present utility model cooperates and is applied to that pulsed bias uses jointly on the sample, can enlarge the scope of adjusting parameter, for the film of preparation different performance provides condition.Simultaneously, can reach the requirement of preparation high-quality thin film by adjusting parameter.
Description of drawings
Fig. 1 is embodiment 1 an electric arc ion-plating deposition device synoptic diagram.
Fig. 2 (a)-(b) is embodiment 1 a Distribution of Magnetic Field synoptic diagram.Wherein, near magnetic line of force distribution plan Fig. 2 (a) target; Distribution of Magnetic Field figure in Fig. 2 (b) vacuum chamber from the target to the matrix.
Fig. 3 (a)-(b) is depositing of thin film rate variation figure.Wherein, Fig. 3 (a) matrix place is apart from target base center different positions depositing of thin film speed; Fig. 3 (b) sedimentation rate with the target material surface target along the variation diagram of locating transverse magnetic field components.
Fig. 4 is embodiment 2 electric arc ion-plating deposition device synoptic diagram.
Fig. 5 is the magnetic line of force distribution plan from the target to the matrix in embodiment 2 vacuum chambers.
Fig. 6 is the magnetic field size distribution figure from the target to the matrix in embodiment 2 vacuum chambers.
Fig. 7 is embodiment 3 electric arc ion-plating deposition device synoptic diagram.
Fig. 8 is the magnetic line of force distribution plan from the target to the matrix in embodiment 3 vacuum chambers.
Fig. 9 is embodiment 4 electric arc ion-plating deposition device synoptic diagram.
Figure 10 is the magnetic line of force distribution plan from the target to the matrix in embodiment 4 vacuum chambers.
Figure 11 is embodiment 5 electric arc ion-plating deposition device synoptic diagram.
Figure 12 is the magnetic line of force distribution plan from the target to the matrix in embodiment 5 vacuum chambers.
Among the figure, 1 vacuum chamber; 2 matrixes (sample); 3 magnetic guiding loops; 4 targets; 5 nickel plating pure iron; 6 solenoids; 7 water inlet pipes; 8 rising pipes; 9 striking coils; 10 striking pins; 11 couplings strengthen magneticfield coil.
Embodiment
Below by instance graph and DISTRIBUTION OF MAGNETIC FIELD figure the utility model is described in further detail.
Embodiment 1: the conventional arc ion plating deposition device of improvement
Adopt merely and applying the motion of method control arc spot on target surface in magnetic field near the target surface, see accompanying drawing 1, the electric arc ion-plating deposition device mainly comprises vacuum chamber 1, matrix (sample) 2, magnetic guiding loop 3, target 4, nickel plating pure iron 5, solenoid 6, water inlet pipe 7, rising pipe 8, striking coil 9, striking pin 10 etc., matrix (sample) 2 is set in the vacuum chamber 1, magnetic guiding loop 3, target 4, striking pin 10, target 4 is positive relative with matrix (sample) 2, target 4 back sides are provided with solenoid 6, nickel plating pure iron 5 is installed in the middle of solenoid 6, recirculated water is by water inlet pipe 7, rising pipe 8 circulates, target 4 is cooled off, and nickel plating pure iron 5 is installed in the water coolant with solenoid 6; Striking pin 10 is connected to the striking coil 9 outside the vacuum chamber 1, and striking coil 9 drive striking pins 10 contact with target 4 and carry out striking; Magnetic guiding loop 3 is arranged at target 4 peripheries, can increase transverse magnetic field components, improves the arc spot movement velocity.Traditional utilize method that permanent magnet comes the bound arc spot to change the size of magneticstrength by the distance between permanent magnet and the target separately, can not regulate continuously, regulation range is little, soaks easy demagnetization for a long time in water coolant.The size that the solenoid of the nickel plating pure iron of the high magnetic conduction of employing center fixed can be regulated magnetic induction density continuously by the size of regulating winding electric current.Around target, be with magnetic guiding loop simultaneously, can improve the intensity of target surface transverse magnetic field components, improve the movement velocity of arc spot, reduce the particulate emission.Indirect current can make arc spot even etching on whole target surface in the coil, improves target utilization.
But the magnetic field configuration of this traditional deposition apparatus is inhomogeneous, sees accompanying drawing 2 (a)-(b).And, make plasma body at the transmission space skewness because arc ion plating is the characteristic of point source, cause the inhomogeneous of thin film deposition.Accompanying drawing 3 (a) is a matrix place different positions depositing of thin film speed, away from the sedimentation rate of center very big decline is arranged.Simultaneously, along with the increase of magneticstrength, caused part ion to run off along with the distribution campaign of target surrounding magnetic field, caused the decline of matrix place ion density, sedimentation rate descends, and sees accompanying drawing 3 (b).
Difference from Example 1 is: adopt novel coupled magnetic field assistant electric arc ion plating deposition device, form by two cover field generator for magnetic, one cover is positioned over the target back, identical among field generator for magnetic and the embodiment 1, nickel plating pure iron 5 promptly is installed in the middle of solenoid 6, mainly in order to control the motion of arc spot, an other cover coupling enhancing magneticfield coil 11 is positioned over matrix (sample) 2 back sides in the vacuum chamber 1, form by a coil, main transmission in order to confining plasma, improve near the ion density of transmission efficiency and matrix, improve near the homogeneity of the ion distribution of matrix, reach the purpose that improves film deposition rate and deposition uniformity.Sample is positioned near the front of coil, sees accompanying drawing 4.
The solenoid and the target that are positioned in the vacuum chamber are coaxial, and accompanying drawing 5 is seen in the distribution of the magnetic field formation S-N-S-N of the magnetic field of generation and the device generation that is positioned over the target back.This coupled magnetic field assistant electric arc ion plating deposition device can improve the Distribution of Magnetic Field of plasma transmission space, sees accompanying drawing 6, improves the transmission efficiency of plasma body.Electric current by coil behind the adjusting matrix can be regulated the intensity in magnetic field and the distribution of charged particle, reaches the different sedimentation rates and the purpose of film quality.
Coil indirect current or pulsed current behind the matrix can cause the vibration of charged particle at transmission space.Increase the collision between the charged particle, improve ionization level.Simultaneously, can give the macrobead charging of plasma transmission space, under the effect of bias voltage, get rid of the deposition of particle on film.
Difference from Example 1 is: adopt novel coupled magnetic field assistant electric arc ion plating deposition device, form by two cover field generator for magnetic, one cover is positioned over the target back, identical among field generator for magnetic and the embodiment 1, nickel plating pure iron 5 promptly is installed in the middle of solenoid 6, identical among an other cover field generator for magnetic (coupling strengthen magneticfield coil 11) and the embodiment 2, the technology of magnetic field configuration and adjusting is also identical.Different is that coupling enhancing magneticfield coil 11 is positioned over matrix (sample) 2 fronts in the vacuum chamber 1, sees accompanying drawing 7,8.It is different with embodiment 2 effects that sample is placed in the back of coil, because near the movement locus difference of the charged particle that the difference of magnetic field configuration causes the sample, the structure properties of deposit film can be different.Simultaneously, the coil of sample front is equivalent to one section magnetic filtering system, can reduce the deposition of particle at film surface.
Difference from Example 1 is: adopt novel coupled magnetic field assistant electric arc ion plating deposition device, form by two cover field generator for magnetic, one cover is positioned over the target back, identical among field generator for magnetic and the embodiment 1, nickel plating pure iron 5 promptly is installed in the middle of solenoid 6, mainly in order to control the motion of arc spot, an other cover field generator for magnetic (coupling strengthens magneticfield coil 11) is made up of two coils, be positioned over matrix (sample) 2 fronts and the back side in the vacuum chamber 1 respectively, between two coils certain distance being arranged, is 80cm in this example, and sample is positioned over the centre of two coils, near the front of second coil, see accompanying drawing 9 specifically.
The solenoid and the target that are positioned in the vacuum chamber are coaxial, and accompanying drawing 10 is seen in the distribution of the magnetic field formation S-N-S-N-S-N of the magnetic field of generation and the device generation that is positioned over the target back.Interior two coils of vacuum chamber can better improve the distribution of plasma transmission space, and a coil of matrix front is equivalent to one section magnetic filtering system, can reduce the deposition of particle at film surface, improves the quality of film.
The coil of matrix back can further improve the transmission efficiency of plasma body.Improve near the ion density of matrix, improve sedimentation rate.The optimization of two coils is regulated and can be realized preparing high-quality film, has improved that traditional magnetic filtering system plasma body transmission range is oversize to cause the drawback that sedimentation rate descends significantly and the equipment complexity is brought simultaneously again.
Difference from Example 1 is: adopt novel coupled magnetic field assistant electric arc ion plating deposition device, form by two cover field generator for magnetic, one cover is positioned over the target back, identical among field generator for magnetic and the embodiment 1, nickel plating pure iron 5 promptly is installed in the middle of solenoid 6, an other cover field generator for magnetic (coupling strengthen magneticfield coil 11) is made up of two coils, identical among field generator for magnetic and the embodiment 4, and the technology of magnetic field configuration and adjusting is also identical.Different is that two coupling enhancing magneticfield coils 11 all are positioned over matrix (sample) 2 fronts in the vacuum chamber, sees accompanying drawing 11,12.It is different with embodiment 4 effects that sample is positioned over the back of two coils in the vacuum chamber, and two coils cooperate the better transmission of confining plasma, improve transmission efficiency.Two coils of sample front are equivalent to a segment length magnetic filtering system, can reduce the deposition of particle at film surface, improve the quality of film.Reduce simultaneously the complicacy of traditional magnetic filtering system again, saved cost.Can satisfy the requirement of preparation high-quality thin film.
Claims (8)
1, coupled magnetic field assistant electric arc ion plating deposition device, it is characterized in that: the electric arc ion-plating deposition device is provided with two cover field generator for magnetic, one cover is positioned over the target back, another set of being positioned in the vacuum chamber deposits matrix by the coupled magnetic field of two cover coupled field generator for magnetic generations is auxiliary.
2, according to the described coupled magnetic field assistant electric arc of claim 1 ion plating deposition device, it is characterized in that: the field generator for magnetic that is positioned over the target back is for installing the solenoid or the annular permanent magnet of nickel plating pure iron in the centre.
3, according to the described coupled magnetic field assistant electric arc of claim 1 ion plating deposition device, it is characterized in that: the field generator for magnetic that is positioned in the vacuum chamber is that a coupling strengthens magneticfield coil, and coupling enhancing magneticfield coil is positioned over matrix one side or the opposite side in the vacuum chamber.
4, according to the described coupled magnetic field assistant electric arc of claim 1 ion plating deposition device, it is characterized in that: the field generator for magnetic that is positioned in the vacuum chamber is that two couplings strengthen magneticfield coil, and coupling enhancing magneticfield coil is positioned over the matrix one or both sides in the vacuum chamber respectively.
5, according to the described coupled magnetic field assistant electric arc of claim 1 ion plating deposition device, it is characterized in that: the target periphery that is positioned in the vacuum chamber is provided with magnetic guiding loop.
6. according to the described coupled magnetic field assistant electric arc of claim 1 ion plating deposition device, it is characterized in that: it is identical with the polarity of the magnetic field of the field generator for magnetic generation that is positioned over the target back to be positioned over the polarity of the magnetic field that the field generator for magnetic of vacuum chamber produces.
7. according to claim 2,3 or 4 described coupled magnetic field assistant electric arc ion plating deposition devices, it is characterized in that: the current forms of solenoid is direct current, interchange or pulse, and size of current is regulated by voltage controller power source.
8. according to claim 2,3 or 4 described coupled magnetic field assistant electric arc ion plating deposition devices, it is characterized in that: solenoid is coaxial with target, the position of solenoid is adjustable, size by the size of regulating solenoid current is regulated magnetic induction density changes polar direction by regulating sense of current.
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2008200101407U CN201158701Y (en) | 2008-01-09 | 2008-01-09 | Coupling magnetic field assisted electric arc ion plating deposition device |
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| CNU2008200101407U CN201158701Y (en) | 2008-01-09 | 2008-01-09 | Coupling magnetic field assisted electric arc ion plating deposition device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102933512A (en) * | 2010-06-03 | 2013-02-13 | 佳能株式会社 | Method of producing optical element forming mold and optical element forming mold |
| CN102936718A (en) * | 2012-11-08 | 2013-02-20 | 温州职业技术学院 | Multi-structure coupling magnetic field adaptability type rotating arc ion plating device |
| CN102953035A (en) * | 2012-11-02 | 2013-03-06 | 温州职业技术学院 | Multi-mode atternation coupling magnetic field assisted electrical arc ion plating deposition arc source apparatus |
| CN111005065A (en) * | 2020-01-07 | 2020-04-14 | 北京科技大学 | Plasma arc deposition device and method for diamond film |
| CN111101097A (en) * | 2018-10-26 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and thin film deposition equipment |
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2008
- 2008-01-09 CN CNU2008200101407U patent/CN201158701Y/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102933512A (en) * | 2010-06-03 | 2013-02-13 | 佳能株式会社 | Method of producing optical element forming mold and optical element forming mold |
| CN102933512B (en) * | 2010-06-03 | 2015-09-02 | 佳能株式会社 | Make method and the optical element forming molds of optical element forming molds |
| US9481595B2 (en) | 2010-06-03 | 2016-11-01 | Canon Kabushiki Kaisha | Method of producing optical element forming mold and optical element forming mold |
| CN102953035A (en) * | 2012-11-02 | 2013-03-06 | 温州职业技术学院 | Multi-mode atternation coupling magnetic field assisted electrical arc ion plating deposition arc source apparatus |
| CN102936718A (en) * | 2012-11-08 | 2013-02-20 | 温州职业技术学院 | Multi-structure coupling magnetic field adaptability type rotating arc ion plating device |
| CN102936718B (en) * | 2012-11-08 | 2014-07-09 | 温州职业技术学院 | Multi-structure coupling magnetic field adaptability type rotating arc ion plating device |
| CN111101097A (en) * | 2018-10-26 | 2020-05-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and thin film deposition equipment |
| CN111005065A (en) * | 2020-01-07 | 2020-04-14 | 北京科技大学 | Plasma arc deposition device and method for diamond film |
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Granted publication date: 20081203 Termination date: 20130109 |