CN201146482Y - Circuit for detecting radio frequency power - Google Patents
Circuit for detecting radio frequency power Download PDFInfo
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- CN201146482Y CN201146482Y CNU2007201814534U CN200720181453U CN201146482Y CN 201146482 Y CN201146482 Y CN 201146482Y CN U2007201814534 U CNU2007201814534 U CN U2007201814534U CN 200720181453 U CN200720181453 U CN 200720181453U CN 201146482 Y CN201146482 Y CN 201146482Y
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Abstract
The utility model relates to a radio frequency power detection circuit, which comprises a radio frequency integrated power detector connected with the anode input terminal of an integrated operational amplifier, a temperature comprehension circuit comprising a power supply, a current-limiting resistance, a first divider resistance, a second divider resistance and a diode, wherein, the power supply is connected with the anode of the diode by the current-limiting resistance and the cathode of the diode is grounded; the first end of the first divider resistance is connected with the anode of the diode and the second end of the first divider resistance is grounded by the second divider resistance; the first end of the second divider resistance is connected with the second end of the first divider resistance and the second end of the second divider resistance is grounded; besides, a connection point is arranged between the second end of the first divider resistance and the first end of the second divider resistance, which is connected with the cathode input terminal and output terminal of the integrated operational amplifier; and the integrated operational amplifier is also comprised and used for correlate counting of the outputs of the temperature comprehension circuit and the radio frequency integrated power detector and amplifying the counting result to output the demodulation voltage.
Description
Technical field
The utility model relates to the communications field, and especially, relates to a kind of RF power sensing circuit.
Background technology
Usually, radio frequency (RF) power-sensing circuit is as the subsystem of radio-frequency power amplifier, be mainly used in the power output that detects the RF power amplifier and convert thereof into corresponding direct voltage, control circuit is then monitored the power output of radio-frequency power amplifier according to this direct voltage, thereby the power output of assurance power amplifier is in normal range (NR).Therefore, normal operation has great importance the precision of assurance power amplifier power-sensing circuit for reliability that improves power amplifier and assurance system.
At present, under the condition of identical input power, its detecting circuit changes along with variation of temperature such as the radio-frequency power detection integrated circuit commonly used of AD8313 and AD8362 etc., and detecting circuit descends when temperature rises, detecting circuit rising when temperature descends.Above-mentioned integrated detection chip is not being carried out under the situation of temperature-compensating, accuracy of detection can change in the scope about 1dB usually, in order to obtain higher accuracy of detection in the set point of temperature scope, need carry out temperature-compensating to RF power sensing circuit usually.
At present, mainly the RF power-sensing circuit is carried out temperature-compensating by integrated temperature sensor.
In actual use, utilize integrated temperature sensor (for example, TMP36) characteristic that is directly proportional with environment temperature of output voltage, utilize resistor to be added to RF detecting circuit output port the detecting circuit of temperature sensor output or be added to the output that the amplification that links to each other with RF detecting circuit output port cushions operational amplifier by suitable voltage voltage ratio, in this case, when temperature rose, the output voltage of RF integrated power wave detector descended, and the temperature sensor output voltage rises; When temperature descended, the output voltage of RF integrated power wave detector rose, and the temperature sensor output voltage descends, and the two variation tendency is opposite, by choosing the proper proportion stack, can finally finish the temperature-compensating to the RF power detection voltage of output.
For reaching compensation effect preferably, the detection voltage of temperature sensor should keep comparatively strict linear ratio relation with temperature in the lowest temperature of circuit working in the total temperature scope of the highest temperature.
The structure example of physical circuit as depicted in figs. 1 and 2.
Usually, the divider resistance parameter can be chosen as follows according to the integrated temperature sensor temperature characterisitic:
Wherein, ScaleFactor is that the voltage-temperature coefficient unit of temperature sensor correspondence is: mV/ ℃.
Drift is a RF power detector temperature drift coefficient, and its unit is: mV/ ℃.
According to the temperature sensor load capacity, about the desirable 1～3K Ω of R2, like this, can be compensated the resistance parameter of circuit by the temperature characterisitic of checking temperature sensor and RF power detector.
Yet, as depicted in figs. 1 and 2, in the process that integrated RF power wave detector temperature characterisitic is compensated according to such scheme, all need to adopt integrated temperature sensor, because the integrated temperature sensor relative costs is higher, therefore will the cost of whole detecting circuit be exerted an influence.
So far, not proposing as yet can be with the technical scheme that addresses the above problem than low cost.
The utility model content
Consider the problems referred to above and make the utility model, for this reason, main purpose of the present utility model is to provide a kind of RF power sensing circuit, detects the cost problem of higher in the correlation technique to solve.
Comprise according to RF power sensing circuit of the present utility model: radio frequency integrated power wave detector is connected to the electrode input end of integrated operational amplifier; Temperature-compensation circuit comprises power supply, current-limiting resistance, first divider resistance, second divider resistance and diode, and wherein, power supply is connected to the positive pole of diode, the minus earth of diode via current-limiting resistance; First end of first divider resistance is connected to the positive pole of diode, and second end of first divider resistance is via the second divider resistance ground connection; First end of second divider resistance is connected to second end of first divider resistance, the second end ground connection of second divider resistance; And, having tie point between second end of first divider resistance and first end of second divider resistance, tie point is connected to the negative input and the output of integrated operational amplifier; And integrated operational amplifier, be used for the output of temperature-compensation circuit and radio frequency integrated power wave detector is carried out correlation computations and amplified result of calculation, the output detecting circuit, the electrode input end of integrated operational amplifier is connected to the output of radio-frequency power wave detector, and negative input is connected to tie point.
Wherein, temperature-compensation circuit is used for the temperature-compensating sampling voltage is exported to via tie point the negative input of integrated operational amplifier.
Usually, the Standard resistance range of current-limiting resistance can be 1K Ω to 40K Ω.
In addition, can determine the ratio of first divider resistance and the resistance of second divider resistance according to following formula:
Wherein, R1 is the resistance of first divider resistance; R2 is the resistance of second divider resistance; SF is the corresponding voltage-temperature coefficient of PN joint of diode, and its unit is mV/ ℃; Drift is the temperature drift coefficient of radio-frequency power wave detector, and its unit is mV/ ℃.Wherein, the scope of the second divider resistance resistance is 1K Ω to 3K Ω.
By technique scheme of the present utility model, the precision of testing circuit can be effectively improved, and the cost of testing circuit can be reduced, have circuit and constitute the characteristics simple, that the development technique risk is little.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present utility model, constitutes the application's a part, and illustrative examples of the present utility model and explanation thereof are used to explain the utility model, do not constitute improper qualification of the present utility model.In the accompanying drawings:
Fig. 1 is the structure chart according to the RF power sensing circuit of correlation technique;
Fig. 2 is the structure chart according to the RF power sensing circuit of correlation technique; And
Fig. 3 is the structure chart according to the novel RF power sensing circuit of this adaptation.
Embodiment
The purpose of this utility model is to provide a kind of low-cost RF integrated wave detector temperature-compensation circuit, can constitute under the prerequisite simple with low cost at circuit, accurately compensates the integrated wave detector temperature characterisitic of RF, reaches the purpose that improves the testing circuit precision.
RF power sensing circuit of the present utility model comprises: radio frequency integrated power wave detector is connected to the electrode input end of integrated operational amplifier; Temperature-compensation circuit comprises power supply, current-limiting resistance, first divider resistance, second divider resistance and diode, and wherein, power supply is connected to the positive pole of diode, the minus earth of diode via current-limiting resistance; First end of first divider resistance is connected to the positive pole of diode, and second end of first divider resistance is via the second divider resistance ground connection; First end of second divider resistance is connected to second end of first divider resistance, the second end ground connection of second divider resistance; And, having tie point between second end of first divider resistance and first end of second divider resistance, tie point is connected to the negative input and the output of integrated operational amplifier; And integrated operational amplifier, be used for the output of temperature-compensation circuit and radio frequency integrated power wave detector is carried out correlation computations and amplified result of calculation, the output detecting circuit, the electrode input end of integrated operational amplifier is connected to the output of radio-frequency power wave detector, and negative input is connected to tie point.
Wherein, temperature-compensation circuit is used for the temperature-compensating sampling voltage is exported to via tie point the negative input of integrated operational amplifier.
When actual configuration, RF integrated power wave detector temperature-compensation circuit of the present utility model comprises that diode temperature detects compensating circuit, RF integrated power wave detector D2 and operational amplifier buffer amplifier circuit D3.
As shown in Figure 3, diode temperature detects compensating circuit and comprises power supply, current-limiting resistance R3, divider resistance R1 (promptly, first divider resistance) and resistance R 2 (promptly, second divider resistance), and temperature compensated diode D1, power supply is by resistance R 3, be connected to temperature-compensating diode D1 positive pole, diode D1 minus earth, R1 one end connects the D1 positive pole simultaneously, the other end is connected to R2, and by resistance R 2 ground connection, diode temperature compensation sampling voltage is delivered to the negative level input of operational amplifier buffer amplifier circuit (that is integrated operational amplifier) D3 by resistance R 1 and the tie point P of R2, improve accuracy of detection by the temperature variant problem of the temperature variant characteristic compensation RF of P point (tie point between R1 and the R2) voltage power detector D2 detecting circuit, the P point also is connected to D3.
RF integrated power wave detector D2 finishes the function that radio frequency power output is converted to direct voltage.
Operational amplifier buffer amplifier circuit D3 carries out subtraction to RF integrated power wave detector D2 and diode temperature compensating circuit P point voltage, and operation result is cushioned amplification, exports final detecting circuit value.
Wherein, when actual configuration circuit shown in Figure 3, integrated operational amplifier D3 can adopt international semiconductor (National Semiconductor) company, and model is the integrated operational amplifier of LM2904.Diode D1 can be the diode of BAV99LT1 model.
This circuit can comprise 1 diode D1 BAV99LT1,1 RF power detector D2 AD8313,1 integrated operational amplifier D3 LM2904, the resistor R 3 (as current-limiting resistance) of 1 10.7K Ω, 1 13.3K resistance R 1 and 1 2.6K resistance R 2.
Usually divider resistance R2, R1 parameter can be chosen as follows according to diode P/N joint conducting temperature characterisitic:
Wherein, SF is the corresponding voltage-temperature coefficient of diode PN joint, and for silicon diode, this value normally is 26, and unit is mV/ ℃; Drift is a RF power detector temperature drift coefficient, and its unit is mV/ ℃.Wherein, the span of R2 resistance can be 1K Ω to 3K Ω.In addition, the span of R3 can be within 1K Ω to 40K Ω, and preferably, its resistance can be 10～20K Ω.
The utility model utilizes the P/N joint conduction voltage drop of discrete diode D1 to rise and the linear characteristics that descend with working temperature, utilize resistor voltage divider circuit R1 and R2 this voltage to be introduced the negative phase end of the buffering operational amplifier D3 that links to each other with RF power detector D2 by proper proportion, resistance R 1 is defined as 5: 1 with the ratio of R2 in this example, like this, the voltage of buffering operational amplifier D3 output is exactly the difference of the P/N conduction voltage drop of RF power detector D3 and diode D2 by the resultant voltage of resistor voltage divider circuit.
At this moment, RF power detector D3 detecting circuit descends when temperature rises, diode D2 conduction voltage drop also descends simultaneously, RF power detector detecting circuit rises when temperature descends, diode current flow pressure drop is simultaneously also risen, because finally the detection voltage by the output of buffering operational amplifier is the difference of the two, therefore, by the parameter of suitably choosing resistor voltage divider circuit the difference of the two is not varied with temperature substantially, thereby the power output that guarantees final buffering operational amplifier D3 detects voltage keeps constant substantially, has effectively improved the temperature accuracy of RF power-sensing circuit.
In sum, the utility model utilizes the temperature characterisitic of diode PN joint, the higher relatively integrated temperature sensor of displacement cost is finished the integrated wave detector temperature-compensating to RF, reached the purpose that improves the testing circuit precision and reduce circuit cost, had circuit and constitute the characteristics simple, that the development technique risk is little.
The above is a preferred embodiment of the present utility model only, is not limited to the utility model, and for a person skilled in the art, the utility model can have various changes and variation.All within spirit of the present utility model and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (5)
1. a RF power sensing circuit is characterized in that, comprising:
Radio frequency integrated power wave detector is connected to the electrode input end of integrated operational amplifier;
Temperature-compensation circuit comprises power supply, current-limiting resistance, first divider resistance, second divider resistance and diode, and wherein, described power supply is connected to the positive pole of described diode, the minus earth of described diode via described current-limiting resistance; First end of described first divider resistance is connected to the positive pole of described diode, and second end of described first divider resistance is via the described second divider resistance ground connection; First end of described second divider resistance is connected to second end of described first divider resistance, the second end ground connection of described second divider resistance; And, having tie point between second end of described first divider resistance and first end of described second divider resistance, described tie point is connected to the negative input and the output of described integrated operational amplifier;
Described integrated operational amplifier, be used for the output of described temperature-compensation circuit and described radio frequency integrated power wave detector is carried out correlation computations and amplified result of calculation, the output detecting circuit, the electrode input end of described integrated operational amplifier is connected to the output of described radio-frequency power wave detector, and negative input is connected to described tie point.
2. RF power sensing circuit according to claim 1 is characterized in that, described temperature-compensation circuit is used for the temperature-compensating sampling voltage is exported to via described tie point the negative input of described integrated operational amplifier.
3. RF power sensing circuit according to claim 1 is characterized in that, the Standard resistance range of described current-limiting resistance is 1K Ω to 40K Ω.
4. RF power sensing circuit according to claim 1 is characterized in that, determines the ratio of described first divider resistance and the resistance of described second divider resistance according to following formula:
Wherein, R1 is the resistance of described first divider resistance; R2 is the resistance of described second divider resistance; SF is the corresponding voltage-temperature coefficient of PN joint of described diode, and its unit is mV/ ℃; Drift is the temperature drift coefficient of described radio-frequency power wave detector, and its unit is mV/ ℃.
5. RF power sensing circuit according to claim 4 is characterized in that, the scope of the described second divider resistance resistance is 1K Ω to 3K Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201814534U CN201146482Y (en) | 2007-11-15 | 2007-11-15 | Circuit for detecting radio frequency power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201814534U CN201146482Y (en) | 2007-11-15 | 2007-11-15 | Circuit for detecting radio frequency power |
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| CN201146482Y true CN201146482Y (en) | 2008-11-05 |
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| CNU2007201814534U Expired - Fee Related CN201146482Y (en) | 2007-11-15 | 2007-11-15 | Circuit for detecting radio frequency power |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055420A (en) * | 2009-11-10 | 2011-05-11 | 夏普株式会社 | Wave detector circuit and high-frequency circuit |
| CN103529288A (en) * | 2013-10-31 | 2014-01-22 | 深圳市云海通讯股份有限公司 | Method for reading power values of multiple paths of RF signals and detecting circuit |
| CN110739917A (en) * | 2019-11-12 | 2020-01-31 | 苏州华太电子技术有限公司 | Temperature compensation circuit based on radio frequency power amplifier |
| CN113359934A (en) * | 2021-07-02 | 2021-09-07 | 上海唯捷创芯电子技术有限公司 | Power detection circuit, chip and communication terminal |
| CN114113772A (en) * | 2021-11-22 | 2022-03-01 | 上海创远仪器技术股份有限公司 | Power detection circuit structure for eliminating temperature drift error |
| CN114567269A (en) * | 2022-03-11 | 2022-05-31 | 重庆邮电大学 | Broadband high-power amplifier based on temperature compensation |
-
2007
- 2007-11-15 CN CNU2007201814534U patent/CN201146482Y/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055420A (en) * | 2009-11-10 | 2011-05-11 | 夏普株式会社 | Wave detector circuit and high-frequency circuit |
| US8432213B2 (en) | 2009-11-10 | 2013-04-30 | Sharp Kabushiki Kaisha | Wave detector circuit and high-frequency circuit |
| CN102055420B (en) * | 2009-11-10 | 2014-03-12 | 夏普株式会社 | Wave detector circuit and high-frequency circuit |
| CN103529288A (en) * | 2013-10-31 | 2014-01-22 | 深圳市云海通讯股份有限公司 | Method for reading power values of multiple paths of RF signals and detecting circuit |
| CN103529288B (en) * | 2013-10-31 | 2016-10-05 | 深圳市云海通讯股份有限公司 | A kind of method reading multi-channel rf signal power value and detecting circuit |
| CN110739917A (en) * | 2019-11-12 | 2020-01-31 | 苏州华太电子技术有限公司 | Temperature compensation circuit based on radio frequency power amplifier |
| CN110739917B (en) * | 2019-11-12 | 2023-09-26 | 苏州华太电子技术股份有限公司 | Temperature compensation circuit based on radio frequency power amplifier |
| CN113359934A (en) * | 2021-07-02 | 2021-09-07 | 上海唯捷创芯电子技术有限公司 | Power detection circuit, chip and communication terminal |
| WO2023274415A1 (en) * | 2021-07-02 | 2023-01-05 | 上海唯捷创芯电子技术有限公司 | Power measurement circuit, chip and communication terminal |
| CN114113772A (en) * | 2021-11-22 | 2022-03-01 | 上海创远仪器技术股份有限公司 | Power detection circuit structure for eliminating temperature drift error |
| CN114567269A (en) * | 2022-03-11 | 2022-05-31 | 重庆邮电大学 | Broadband high-power amplifier based on temperature compensation |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081105 Termination date: 20131115 |