CN201134433Y - Semiconductor diode chip emitting multi-colored light - Google Patents
Semiconductor diode chip emitting multi-colored light Download PDFInfo
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- CN201134433Y CN201134433Y CNU2007201907187U CN200720190718U CN201134433Y CN 201134433 Y CN201134433 Y CN 201134433Y CN U2007201907187 U CNU2007201907187 U CN U2007201907187U CN 200720190718 U CN200720190718 U CN 200720190718U CN 201134433 Y CN201134433 Y CN 201134433Y
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Abstract
A semi-conductor diode chip which can light polychromatic light comprises a base and a top layer, the base is formed by an under-layer, a light emission buffer layer and a semi-insulating layer, wherein the light emission buffer layer and the semi-insulating layer are coated on the under-layer, more than two color light emission chip areas are overlapped on the base, each emission chip area is formed by an active layer in the center, an upper coating layer, a lower coating layer, an upper contacting layer and a lower contacting layer, wherein the upper coating layer, the lower coating layer, the upper contacting layer and the lower contacting layer are arranged on the upper and lower sides, semi-insulating layers are arranged between the upper emission chip area and the lower emission chip area, between the lowest emission chip area and the base, and between the highest emission chip area and the top layer, each emission chip area is equipped a positive electrode and a negative electrode, the positive electrode and the negative electrode are respectively led to the top layer by the upper contacting layer and the lower contacting layer, wherein the positive electrode and the negative electrode are in corresponding electrical connection with the upper contacting layer and the lower contacting layer. More than two color lights which are overlapped are lights with different wave lengths. The produced light emitting diode can generate light with single color or combined color by choosing and controlling, in particular, the semi-conductor diode chip can light white light with wide application after combining lights with different wave lengths, thereby widening application range of light emitting diodes.
Description
Technical field
The utility model belongs to electronic applications, relates in particular to a kind ofly to send out the semiconductor diode chip heterogeneous light.
Background technology
Light-emitting diode (LED) is considered to follow-on lighting source because led light source has the even brightness characteristic, and long service life, use be the low-tension supply of 5～24V, fool proof; Anti-seismic performance is outstanding, adds that LED does not need to use environmentally harmful mercury metal, environmental protection more.It will replace incandescent lamp and fluorescent lamp in not far future.
White light has prior purposes than the light of other colors, not only can be used as identification and uses coloured light, the more important thing is can be used for throwing light on.
At present, the light that light-emitting diode (LED) sends concentrates near the wavelength, i.e. monochromatic light.Polychromatic light (comprising white light) can only go on foot the method that excites and realize by the LED combination or two of adopting the single color of a plurality of differences, such as, produce white light by light red, green and that blue LED sends is mixed, or produce white light with blue-light excited yellow fluorescent material.This obviously method is unfavorable for the application of light-emitting diode.
Summary of the invention
The purpose of this utility model provides a kind ofly sends out the semiconductor diode chip heterogeneous light, makes light-emitting diode with it and can send not homochromy light according to instructions for use.
For achieving the above object, the utility model is taked following design:
A kind ofly send out the semiconductor diode chip heterogeneous light, comprise a substrate, a top layer;
Described substrate is made of substrate and the light emission resilient coating, the semi-insulating layer (dielectric layer) that cover thereon;
Be stacked with the emission core district of two above color of light in substrate, each emission core district is made of upper and lower cover layer and upper and lower contact layer that the center is used for the luminous active layer and the upper and lower both sides that are placed in; Insert and put semi-insulating layer between each upper and lower emission core district, the top layer of issue between core shooting district and substrate most, going up in the emission core district most is semi-insulating layer; Each is launched the core district and is provided with positive and negative electrode, and the upper and lower contact layer by corresponding electric connection causes top layer respectively.
The described positive and negative electrode of respectively launching the core district is the electrode that is formed by the conducting metal filler that is filled in the duct; The side insulation is enclosed in this duct, and it leads to corresponding contact layer from the top.
Described two stacked above color of light respectively are the light of different wave length.
The utility model has the advantages that:
1, single semiconductor diode chip both can send polychromatic light, particularly sent broad-spectrum white light after the light combination with certain wavelength, had widened the range of application of light-emitting diode.
2, use is more flexible.
Description of drawings
Fig. 1 a is the utility model one example structure schematic diagram (main looking has three kinds of color of light emission core districts)
Fig. 1 b is Fig. 1 a illustrated embodiment structural representation vertical view
Fig. 2 a is another example structure schematic diagram of the utility model (main looking has two kinds of color of light emission core districts)
Fig. 2 b is Fig. 2 a illustrated embodiment structural representation vertical view
Embodiment
Shown in Fig. 1 a, Fig. 1 b, Fig. 2 a, Fig. 2 b, the utility model sends out the semiconductor diode chip heterogeneous light, include substrate (comprising: substrate 101, resilient coating 102, semi-insulating layer 103 and reflector 104), top layer (being insulating barrier 134), improvement is: the emission core district that is stacked with two above color of light in substrate.Shown in Fig. 1 a is to have three kinds of color of light emission core districts (the first emission core district comprises: following contact layer 105, lower caldding layer 106, be used for luminous active layer 107, upper caldding layer 108, go up contact layer 109; The second emission core district comprises: following contact layer 117, lower caldding layer 118, be used for luminous active layer 119, upper caldding layer 120, go up contact layer 121; The 3rd emission core district comprises: following contact layer 129, lower caldding layer 130, be used for luminous active layer 131, upper caldding layer 132, go up contact layer 133).Shown in Fig. 2 a is to have two kinds of color of light emission core districts (the first emission core district comprises: following contact layer 105, lower caldding layer 106, be used for luminous active layer 107, upper caldding layer 108, go up contact layer 109; The second emission core district comprises: following contact layer 117, lower caldding layer 118, be used for luminous active layer 119, upper caldding layer 120, go up contact layer 121).
Each emission core district is made of upper and lower cover layer and upper and lower contact layer that the center is used for the luminous active layer and the upper and lower both sides that are placed in; Between each upper and lower emission core district, issue most between core shooting district and substrate and top layer is semi-insulating layer and (from top to bottom comprises among Fig. 1 a: 134,122,110,103; From top to bottom comprise among Fig. 2 a: 134,110,103; ); Each launch the core district be provided with control its excitation light emission positive and negative electrode (comprise from left to right among Fig. 1 a: 113,125,137,140,128,116; Comprise from left to right among Fig. 2 a: 113,125,128,116).
Start the light emission core district of particular location floor, can send the light of corresponding look.
Two stacked above color of light described in the utility model respectively are the light of different wave length, this design by control luminous zone and intensity thereof (but the emission core district that control electrode makes each color of light both independent transmission also can a plurality of combined transmit to form the luminous diode of many combined color), produce multiple (as red, green, blueness) light (comprising white light) respectively or simultaneously.
The backing material that the utility model sends out the semiconductor diode chip heterogeneous light is made by a kind of material of silicon or GaAs, gallium nitride, aluminium nitride, carborundum, sapphire; At least one adopts following material in the active layer: gallium indium phosphorus or AlGaInP, gallium indium nitrogen, gallium nitrogen phosphorus.
To enumerate an embodiment below and utility model is sent out the semiconductor diode chip heterogeneous light be described further, it can send multiple color (as redness, green and blue), sees Fig. 1 a.Utilize disclosed principle in this example and the accompanying drawing, can make arbitrarily the led chip of 2 kinds or more color of light.By control chip, can make chip only send a kind of light of color, also can carry out luminous by the combination in any chip.All open as (or wherein a plurality of) luminous zone that fruit chip is all, the light that sends is white light.
Fig. 1 a is a LED semiconductor chip structure figure that can send multiple color of light, and this chip structure can send three kinds of color of light, as redness, and green, blueness.These three unit chips can be grown on a substrate 101.Each unit chip structure can independent Be Controlled carry out luminous.The 101st, substrate, this backing material can be silicon Si, GaAs GaAs, gallium nitride GaN, aluminium nitride AlN, carborundum SiC, sapphire or other materials.The 102nd, resilient coating, the purpose of using resilient coating is the chip defect that causes for the different in kind that reduces owing to substrate and chip epitaxial film materials.Cushioning layer material can adopt gallium nitride GaN or other materials.The 103rd, semi-insulating layer or Jie's electrode layer are as gallium nitride GaN.The 105th, contact layer, the purpose of this layer provides and electrically contacts, as gallium nitride GaN, aluminum gallium nitride A/GaN, gallium indium nitrogen GalnN.Contact layer can adopt N+ or P+ heavy doping method to set up contact.Coating one deck reflector 104 below contact layer 105 is to reflex to effective direction with all light.
The 106th, one deck is used to launch monochromatic coating layer such as redness, and it can be gallium nitride GaN, aluminum gallium nitride A/GaN, gallium indium nitrogen, gallium nitrogen phosphorus or other materials.The 107th, be used to launch the emission layer or the active layer of wishing the color of light that obtains, as redness, it can be gallium indium phosphorus GalnP, AlGaInP AlGalnP, gallium indium nitrogen GalnN, or gallium nitrogen phosphorus GaNP.Coating layer 108 overlays on 107, can be gallium nitride GaN, aluminum gallium nitride A/GaN, gallium indium nitrogen GalnN gallium nitrogen phosphorus GaNP or other materials.The 109th, the contact layer that is used to electrically contact, as gallium nitride GaN, aluminum gallium nitride A/GaN, gallium indium nitrogen GalnN, contact layer can adopt N+ or P+ heavy doping method to set up contact.The 110th, semi-insulating layer or dielectric layer can be gallium nitride GaN or other materials.Electrically contacting of this structure is main by structure 111, is about to form after each layer etching above 110.112 is insulating barrier, is placed on the interior formation insulative pore passage of 110 etched holes, the 113rd, by the electrode that the conducting metal filler forms, be used for electrically contacting of top.Similarly structure is as 114 (electric contact structures), 115 (insulative pore passages), and 116 (conducting metal filler electrodes) are used for electric connection.Therefore, this LED matrix can be sent the light such as the redness of first kind of color separately by control.
Except producing the LED structure of red light, can also set up other LED structure.The 117th, the contact layer that is used to electrically contact, it can be gallium nitride GaN, aluminum gallium nitride A/GaN, gallium indium nitrogen GalnN.Contact layer can adopt N+ or P+ heavy doping method to set up contact.The 118th, the coating layer of the another kind of color of light of emission is green in the present embodiment, and it can be gallium nitride GaN, aluminum gallium nitride A/GaN, gallium indium nitrogen, gallium nitrogen phosphorus.The 119th, the emission layer of green light or active layer, it can be gallium indium phosphorus GalnP, AlGaInP AlGalnP, gallium indium nitrogen GalnN, or gallium nitrogen phosphorus GaNP.The 120th, the coating layer of transmitting green light, it can be gallium nitride GaN, aluminum gallium nitride A/GaN, gallium indium nitrogen, gallium nitrogen phosphorus.The 121st, for the contact layer that transmitting green light is used to electrically contact, it can be gallium nitride GaN, aluminum gallium nitride A/GaN, gallium indium nitrogen GalnN.Contact layer can adopt N+ or P+ heavy doping method to set up contact.The 122nd, semi-insulating layer or dielectric layer can be gallium nitride GaN or other materials.This structure electrically contact the vertical or top-down structure 123 of common employing, each structure sheaf that promptly is etched in above 121 form.Insulating barrier 124 is placed on the interior formation insulative pore passage of contact hole 123, and the electrode 125 that is formed by metal charge is used for forming from the top and electrically contacts.Same quadrat method, the 126th, contact hole, the 127th, the insulative pore passage that insulating barrier forms, the 128th, the electrode that the conducting metal filler forms.
Except the LED structure of glow green, also made the LED structure of another kind of color of light.Wherein, the 129th, the contact layer that is used to electrically contact, it can be GaN, A/GaN, GalnN, this layer adopt N+ or P+ heavy doping to handle.The 130th, the coating layer of the coloured light that turns blue, it can be GaN, A/GaN, GaInN, GaNP.The 131st, the emission layer of the coloured light that turns blue or active layer, it can be GalnN, or A/GaN.132 also is the coating layer of coloured light of turning blue, and it can be GaN, A/GaN, GaInN.The 133rd, the contact layer that is used to electrically contact, it can be GaN, AlGaN, GalnN, this layer adopt N+ or P+ heavy doping to handle.The 134th, semi-insulating or dielectric layer, it can be the thin slice of GaN or similar Si3N4 and SiO2.Realize in the hole 135 that forms by each structure sheaf above the etching 133 that electrically contacts of this structure.Insulating barrier 136 is placed on the interior formation insulative pore passage in hole 135, and the electrode 137 that is formed by the conducting metal filler is used for electrically contacting from top foundation.In the similar contact structures 138, the 139th, insulating barrier forms insulative pore passage, and the 140th, the electrode that the conducting metal filler forms.This structure can make led chip send blue light.
Fig. 1 b is the vertical view that can launch the led chip 201 of multiple color (can representative graph 1a illustrated embodiment).The 202nd, the insulation spacer of electrode 113, the 203rd, the insulation spacer of electrode 116,113 and 116 control red light.The 204th, the insulation spacer of electrode 125, the 205th, the insulation spacer of electrode 128,125 and 128 control green light.The 206th, the insulation spacer of electrode 137, the 207th, the insulation spacer of electrode 140,137 and 140 control blue lights.
In the foregoing description, red, green, blue light emission core district is on same substrate.
The emission core district of three color of light of described red, green, blue is permutation and combination from the bottom to top, and three emission core districts optionally start, and promptly can only start an emitter region, also can start any two emitter regions or three emitter regions and start simultaneously.This led chip can selectively opened a certain emission core district, makes chip once only send a kind of light of color.Perhaps open simultaneously three luminous zones, and led chip sends white light.
The light-emitting diode of sending out the semiconductor diode chip heterogeneous light and making with the utility model can be by control electrode independent or a plurality of combined transmit form the luminous diode of many combined color.
The disclosed led chip group of the utility model structure is described in front, and illustrates in conjunction with concrete accompanying drawing.Above explanation comprise and accompanying drawing shown in structure should be considered as exemplaryly, but not in order to limiting claim of the present utility model, this technology can be carried out some changes and improvements not breaking away from the disclosed principle basis of present patent application.All variations that are equivalent to the implication of present patent application claim and scope all belong to the category of this patent claim.
Claims (7)
1, a kind ofly send out the semiconductor diode chip heterogeneous light, comprise a substrate, a top layer, it is characterized in that:
Described substrate is made of substrate and the light emission resilient coating, the semi-insulating layer that cover thereon;
Be stacked with the emission core district of two above color of light in substrate, each emission core district is made of upper and lower cover layer and upper and lower contact layer that the center is used for the luminous active layer and the upper and lower both sides that are placed in; Insert and put semi-insulating layer between each upper and lower emission core district, the top layer of issue between core shooting district and substrate most, going up in the emission core district most is semi-insulating layer; Each is launched the core district and is provided with positive and negative electrode, and the upper and lower contact layer by corresponding electric connection causes top layer respectively.
2, according to claim 1ly send out the semiconductor diode chip heterogeneous light, it is characterized in that: the described positive and negative electrode of respectively launching the core district is the electrode that is formed by the conducting metal filler that is filled in the duct; The side insulation is enclosed in this duct, and it leads to corresponding contact layer from the top.
3, according to claim 1ly send out the semiconductor diode chip heterogeneous light, it is characterized in that: described two stacked above color of light respectively are the light of different wave length.
4, send out the semiconductor diode chip heterogeneous light according to right 1 is described, it is characterized in that: backing material is made by a kind of material of silicon or GaAs, gallium nitride, aluminium nitride, carborundum, sapphire.
5, send out the semiconductor diode chip slapper heterogeneous light according to right 1 is described, it is characterized in that: at least one adopts following material in the described active layer: gallium indium phosphorus or AlGaInP, gallium indium nitrogen, gallium nitrogen phosphorus.
6, according to claim 1ly send out the semiconductor diode chip heterogeneous light, it is characterized in that: the emission core district that in substrate, is stacked with three color of light of red, green, blue.
7, according to claim 6ly send out the semiconductor diode chip heterogeneous light, it is characterized in that: the emission core district of three color of light of described red, green, blue is permutation and combination from the bottom to top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201907187U CN201134433Y (en) | 2007-12-11 | 2007-12-11 | Semiconductor diode chip emitting multi-colored light |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201907187U CN201134433Y (en) | 2007-12-11 | 2007-12-11 | Semiconductor diode chip emitting multi-colored light |
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| CN201134433Y true CN201134433Y (en) | 2008-10-15 |
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| CNU2007201907187U Expired - Fee Related CN201134433Y (en) | 2007-12-11 | 2007-12-11 | Semiconductor diode chip emitting multi-colored light |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716238A (en) * | 2013-12-12 | 2015-06-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Dichromatic photoelectric device and production method thereof |
| CN107342352A (en) * | 2016-04-04 | 2017-11-10 | 三星电子株式会社 | LED light-source module and display device |
| CN108138497A (en) * | 2015-09-07 | 2018-06-08 | 博优国际集团公司 | Cover plate comprising luminescent system |
| WO2020091507A1 (en) * | 2018-11-02 | 2020-05-07 | 서울바이오시스 주식회사 | Light-emitting diode |
| CN112970119A (en) * | 2018-11-05 | 2021-06-15 | 首尔伟傲世有限公司 | Light emitting element |
-
2007
- 2007-12-11 CN CNU2007201907187U patent/CN201134433Y/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716238A (en) * | 2013-12-12 | 2015-06-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Dichromatic photoelectric device and production method thereof |
| CN108138497A (en) * | 2015-09-07 | 2018-06-08 | 博优国际集团公司 | Cover plate comprising luminescent system |
| CN107342352A (en) * | 2016-04-04 | 2017-11-10 | 三星电子株式会社 | LED light-source module and display device |
| US10170666B2 (en) | 2016-04-04 | 2019-01-01 | Samsung Electronics Co., Ltd. | LED light source module and display device |
| US10475957B2 (en) | 2016-04-04 | 2019-11-12 | Samsung Electronics Co., Ltd. | LED light source module and display device |
| WO2020091507A1 (en) * | 2018-11-02 | 2020-05-07 | 서울바이오시스 주식회사 | Light-emitting diode |
| CN112970119A (en) * | 2018-11-05 | 2021-06-15 | 首尔伟傲世有限公司 | Light emitting element |
| EP3879576A4 (en) * | 2018-11-05 | 2022-08-03 | Seoul Viosys Co., Ltd | Light emitting element |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081015 Termination date: 20151211 |
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| EXPY | Termination of patent right or utility model |