CN201126470Y - Miniature fluxgate sensor - Google Patents
Miniature fluxgate sensor Download PDFInfo
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- CN201126470Y CN201126470Y CNU2007201176228U CN200720117622U CN201126470Y CN 201126470 Y CN201126470 Y CN 201126470Y CN U2007201176228 U CNU2007201176228 U CN U2007201176228U CN 200720117622 U CN200720117622 U CN 200720117622U CN 201126470 Y CN201126470 Y CN 201126470Y
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Abstract
The utility model provides a minisize fluxgate sensor comprising a probe portion and an interface circuit portion, wherein, the interface circuit portion is composed of a preamplification circuit 2, a band-pass filter 3, a switch phase-sensitive demodulation circuit 7, a low-pass filter 8, a buffer level 4, a signal generation circuit 5, and a frequency multiplying circuit 6, wherein, the a signal generation circuit 5 is composed by Wien-Bridge circuits to generate a 5KHz sine signal which passes through the buffer level 4, being connected to the input end of a probe 1 of a fluxgate, and sent to the input end of the frequency multiplying circuit 6, the output end of the frequency multiplying circuit 6 is connected to an input end of the phase-sensitive demodulation circuit 7, the output end of the probe outputs signals to pass through the preamplification circuit 2, the band-pass filter 3, the phase-sensitive demodulation circuit 7 and the low-pass filter 8, then being output. According to the utility model, the CMOS analog integration technology is used to realize single chip integration of the interface circuit of the fluxgate sensor. The interface circuit of a fluxgate magnetometer has high stability, strong anti-interference ability and small power consumption, thereby realizing integration and micromation of the fluxgate.
Description
One, technical field
What the present invention relates to is a kind of low-intensity magnetic field detecting sensor, specifically a kind of micro fluxgate sensor based on the second harmonic back-and-forth method.
Two, background technology
Increasingly mature along with microelectromechanical systems (MEMS) technology and integrated circuit technology in recent years, fluxgate sensor begins to develop to integrated, microminiaturized direction.
Fluxgate sensor resolution height is measured the low-intensity magnetic field wide ranges, has reliable, simple and easy, economy and durability, characteristics such as can directly measure the component in magnetic field and be suitable for using in the high-speed motion system.What adopt is the discrete component circuit yet traditional fluxgate sensor interface circuit, the major defect of sort circuit be all bigger and cost of size, weight, power consumption than higher, so limited the application that fluxgate sensor is gone up in some aspects.Under the condition that keeps the original superperformance of conventional fluxgate, reduce power consumption, its microminiaturization is had very important significance by designing cleverly, making.
Three, summary of the invention
The object of the present invention is to provide a kind of interface circuit stability high, antijamming capability is strong, and power consumption is little, and chip size is little simultaneously, thereby realizes integrated, the microminiaturized micro fluxgate sensor of fluxgate.
The object of the present invention is achieved like this: it comprises probe and interface circuit two parts, wherein the interface circuit part is by pre-amplification circuit 2, bandpass filter 3, switch phase demodulation circuit 7, low-pass filter 8, buffer stage 4, signal generating circuit 5, frequency multiplier circuit 6 constitutes, described signal generating circuit 5 is made of wien bridge circuit, produce the 5KHZ sinusoidal signal, the buffer stage 4 of leading up to is connected to the input end of fluxgate magnetic core 1, one the tunnel delivers to the input end of frequency multiplier 6, frequency multiplier output is connected to an input end of phase-sensitive demodulator 7, the output terminal output signal of probe is through prime amplifier 2, bandpass filter 3, phase-sensitive demodulator 7, low-pass filter 8 are exported then.
The present invention can also comprise:
1, signal generating circuit in the described CMOS interface circuit is to adopt Wen's bridge construction to produce sinusoidal signal, wherein the in-phase end of the first operational amplifier F1 is through resistance R 1, capacitor C 1 links to each other with the output terminal of the first operational amplifier F1, the in-phase end of the first operational amplifier F1 is through parallel resistor R2, capacitor C 2 ground connection, the out-phase end of the first operational amplifier F1 is through resistance R 3 ground connection, the out-phase end of the first operational amplifier F1 is through resistance R 4, resistance R 5 links to each other with the output terminal of the first operational amplifier F1, the out-phase end of the first operational amplifier F1 is through resistance R 4, resistance R 7 links to each other with the output terminal of the first operational amplifier F1, and the out-phase end of the first operational amplifier F1 is through resistance R 4, the diode D1 of resistance R 6 and two differential concatenations, diode D2 links to each other with the output terminal of the first operational amplifier F1.
2, the bandwidth-limited circuit in the described CMOS interface circuit adopts second-order bandpass filter, wherein the out-phase end of the second operational amplifier F2 is through resistance R 8 ground connection, the out-phase end of the second operational amplifier F2 is connected to the output terminal of the second operational amplifier F2 through resistance R 9, input signal is connected to the in-phase end of the second operational amplifier F2 through resistance R 10, capacitor C 4, by capacitor C 3 ground connection, the in-phase end of the capacitor C 4 and the second operational amplifier F1 is middle through resistance R 11 ground connection in the middle of resistance R 10 and the capacitor C 4.
3, phase demodulation circuit in the described CMOS interface circuit adopts switch phase-sensitive demodulator 7, wherein the out-phase end of the 3rd operational amplifier F3 is through resistance R 13 ground connection, wherein the out-phase end of the 3rd operational amplifier F3 is connected to the output terminal of the 3rd operational amplifier F3 through resistance R 14, the logical output signal of band is connected to the in-phase end of the 3rd operational amplifier F3 through resistance R 12, manage M1 by PMOS between resistance R 12 and the 3rd operational amplifier, NMOS pipe M2 ground connection, PMOS pipe M3 and NMOS pipe M4 series connection are connected into the form of phase inverter, the grid of PMOS pipe M1 and PMOS pipe M3, the grid of NMOS pipe M4, the output of comparer links to each other, PMOS manages M3, the centre of NMOS pipe M4 links to each other with NMOS pipe M2, the out-phase end ground connection of comparer, the in-phase end of comparer links to each other with frequency multiplier circuit output.
4, the low pass circuit in the described CMOS interface circuit 8 adopts two terrace bandpass filters, wherein the out-phase end of four-operational amplifier F4 is through resistance R 17 ground connection, wherein the out-phase end of four-operational amplifier F4 is connected to the output terminal of four-operational amplifier F4 through resistance R 18, the phase sensitivity output signal is connected to the in-phase end of four-operational amplifier F4 through resistance R 15, resistance R 16, by capacitor C 5 ground connection, pass through capacitor C 6 ground connection between resistance R 16 and the four-operational amplifier F4 in the middle of resistance R 15 and the resistance R 16.
The present invention allows signal generating circuit produce the lower sinusoidal signal of frequency.Sinusoidal signal with this low frequency makes the excitation primary coil be in periodically hypersaturated state, act on probe when axial as external magnetic field, in inductive coil, will induce an information that contains external magnetic field intensity in probe axial component size, the signal that inductive coil induces contains odd harmonic and second harmonic, use bandwidth-limited circuit filtering odd harmonic in filtering circuit, the signal with frequency multiplication behind the signal process bandwidth-limited circuit together is sent in the phase-sensitive detection circuit.Carry out smothing filtering by the detected signal of phase-sensitive detection circuit by low-pass filter circuit, the signal that low-pass filter circuit comes out is exactly final desired signal.
Major advantage of the present invention is embodied in the CMOS Analogous Integrated Electronic Circuits technology of utilizing, and realizes that the single-chip of fluxgate sensor interface circuit is integrated.The interface circuit stability of the flux-gate magnetometer that is provided is high, and antijamming capability is strong, and power consumption is little, and chip size is little simultaneously, thereby realizes the integrated, microminiaturized of fluxgate.
Four, description of drawings
Fig. 1 is a structured flowchart of the present invention.
Fig. 2 is the signal generating circuit schematic diagram among Fig. 1.
Fig. 3 is the bandpass filter schematic diagram among Fig. 1.
Fig. 4 is the switch phase-sensitive demodulator schematic diagram among Fig. 1.
Fig. 5 is the principle of lowpass filter figure among Fig. 1.
Five, embodiment
For a more detailed description to the present invention for example below in conjunction with accompanying drawing:
In conjunction with Fig. 1, micro fluxgate sensor comprises probe and interface circuit two parts, wherein the interface circuit part is made of pre-amplification circuit 2, bandpass filter 3, switch phase demodulation circuit 7, low-pass filter 8, buffer stage 4, signal generating circuit 5, frequency multiplier circuit 6, described signal generating circuit 5 is made of wien bridge circuit, produce the 5KHZ sinusoidal signal, the buffer stage 4 of leading up to is connected to the input end of fluxgate magnetic core 1, and one the tunnel delivers to the input end of frequency multiplier 6.Frequency multiplier output is connected to an input end of phase-sensitive demodulator 7.The output terminal output signal of probe is through prime amplifier 2, bandpass filter 3, phase-sensitive demodulator 7, and low-pass filter 8 is exported then.
In conjunction with Fig. 2, signal generating circuit in the CMOS interface circuit adopts Wen's bridge construction to produce sinusoidal signal, wherein the in-phase end of the first operational amplifier F1 is through R1, C1 links to each other with the output terminal of the first operational amplifier F1, the in-phase end of the first operational amplifier F1 is through the R2 of parallel connection, C2 ground connection, the out-phase end of the first operational amplifier F1 is through R3 ground connection, the out-phase end of the first operational amplifier F1 is through R4, R5 links to each other with the output terminal of the first operational amplifier F1, the out-phase end of the first operational amplifier F1 is through R4, R7 links to each other with the output terminal of the first operational amplifier F1, and the out-phase end of the first operational amplifier F1 is through R4, the diode D1 of R6 and two differential concatenations, D2 links to each other with the output terminal of the first operational amplifier F1.
In conjunction with Fig. 3, bandwidth-limited circuit in the CMOS interface circuit adopts second-order bandpass filter, wherein the out-phase end of the second operational amplifier F2 is through R8 ground connection, the out-phase end of the second operational amplifier F2 is connected to the output terminal of the second operational amplifier F2 through R9, input signal is connected to the in-phase end of the second operational amplifier F2 through R10, C4, by C3 ground connection, the in-phase end of the C4 and the second operational amplifier F1 is middle through R11 ground connection in the middle of R10 and the C4.
In conjunction with Fig. 4, phase demodulation circuit in the CMOS interface circuit adopts switch phase-sensitive demodulator 7, wherein the out-phase end of the 3rd operational amplifier F3 is through resistance R 13 ground connection, wherein the out-phase end of the 3rd operational amplifier F3 is connected to the output terminal of the 3rd operational amplifier F3 through resistance R 14, the logical output signal of band is connected to the in-phase end of the 3rd operational amplifier F3 through resistance R 12, manage M1 by PMOS between resistance R 12 and the 3rd operational amplifier, NMOS pipe M2 ground connection, PMOS pipe M3 and NMOS pipe M4 series connection are connected into the form of phase inverter, the grid of PMOS pipe M1 and PMOS pipe M3, the grid of NMOS pipe M4, the output of comparer links to each other, PMOS manages M3, the centre of NMOS pipe M4 links to each other with NMOS pipe M2, the out-phase end ground connection of comparer, the in-phase end of comparer links to each other with frequency multiplier circuit output.
In conjunction with Fig. 5, low pass circuit 8 in the CMOS interface circuit adopts two terrace bandpass filters, wherein the out-phase end of four-operational amplifier F4 is through R17 ground connection, wherein the out-phase end of four-operational amplifier F4 is connected to the output terminal of four-operational amplifier F4 through R18, the phase sensitivity output signal is connected to the in-phase end of four-operational amplifier F4 through R15, R16, by C5 ground connection, pass through C6 ground connection between R16 and the four-operational amplifier F4 in the middle of R15 and the R16.
Claims (5)
1, a kind of micro fluxgate sensor, it comprises probe and interface circuit two parts, it is characterized in that: wherein the interface circuit part is by pre-amplification circuit (2), bandpass filter (3), switch phase demodulation circuit (7), low-pass filter (8), buffer stage (4), signal generating circuit (5), frequency multiplier circuit (6) constitutes, described signal generating circuit (5) is made of wien bridge circuit, produce the 5KHZ sinusoidal signal, the buffer stage (4) of leading up to is connected to the input end of fluxgate magnetic core (1), one the tunnel delivers to the input end of frequency multiplier (6), frequency multiplier output is connected to an input end of phase-sensitive demodulator (7), the output terminal output signal of probe is through prime amplifier (2), bandpass filter (3), phase-sensitive demodulator (7), low-pass filter (8) is exported then.
2, micro fluxgate sensor according to claim 1, it is characterized in that: the signal generating circuit in the described CMOS interface circuit is to adopt Wen's bridge construction to produce sinusoidal signal, wherein the in-phase end of the first operational amplifier F1 is through resistance R 1, capacitor C 1 links to each other with the output terminal of the first operational amplifier F1, the in-phase end of the first operational amplifier F1 is through parallel resistor R2, capacitor C 2 ground connection, the out-phase end of the first operational amplifier F1 is through resistance R 3 ground connection, the out-phase end of the first operational amplifier F1 is through resistance R 4, resistance R 5 links to each other with the output terminal of the first operational amplifier F1, the out-phase end of the first operational amplifier F1 is through resistance R 4, resistance R 7 links to each other with the output terminal of the first operational amplifier F1, and the out-phase end of the first operational amplifier F1 is through resistance R 4, the diode D1 of resistance R 6 and two differential concatenations, diode D2 links to each other with the output terminal of the first operational amplifier F1.
3, micro fluxgate sensor according to claim 1, it is characterized in that: the bandwidth-limited circuit in the described CMOS interface circuit adopts second-order bandpass filter, wherein the out-phase end of the second operational amplifier F2 is through resistance R 8 ground connection, the out-phase end of the second operational amplifier F2 is connected to the output terminal of the second operational amplifier F2 through resistance R 9, input signal is connected to the in-phase end of the second operational amplifier F2 through resistance R 10, capacitor C 4, by capacitor C 3 ground connection, the in-phase end of the capacitor C 4 and the second operational amplifier F1 is middle through resistance R 11 ground connection in the middle of resistance R 10 and the capacitor C 4.
4, micro fluxgate sensor according to claim 1, it is characterized in that: the phase demodulation circuit in the described CMOS interface circuit adopts switch phase-sensitive demodulator 7, wherein the out-phase end of the 3rd operational amplifier F3 is through resistance R 13 ground connection, wherein the out-phase end of the 3rd operational amplifier F3 is connected to the output terminal of the 3rd operational amplifier F3 through resistance R 14, the logical output signal of band is connected to the in-phase end of the 3rd operational amplifier F3 through resistance R 12, manage M1 by PMOS between resistance R 12 and the 3rd operational amplifier, NMOS pipe M2 ground connection, PMOS pipe M3 and NMOS pipe M4 series connection are connected into the form of phase inverter, the grid of PMOS pipe M1 and PMOS pipe M3, the grid of NMOS pipe M4, the output of comparer links to each other, PMOS manages M3, the centre of NMOS pipe M4 links to each other with NMOS pipe M2, the out-phase end ground connection of comparer, the in-phase end of comparer links to each other with frequency multiplier circuit output.
5, micro fluxgate sensor according to claim 1, it is characterized in that: the low pass circuit (8) in the described CMOS interface circuit adopts two terrace bandpass filters, wherein the out-phase end of four-operational amplifier F4 is through resistance R 17 ground connection, wherein the out-phase end of four-operational amplifier F4 is connected to the output terminal of four-operational amplifier F4 through resistance R 18, the phase sensitivity output signal is through resistance R 15, resistance R 16 is connected to the in-phase end of four-operational amplifier F4, by capacitor C 5 ground connection, pass through capacitor C 6 ground connection between resistance R 16 and the four-operational amplifier F4 in the middle of resistance R 15 and the resistance R 16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201176228U CN201126470Y (en) | 2007-12-07 | 2007-12-07 | Miniature fluxgate sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201176228U CN201126470Y (en) | 2007-12-07 | 2007-12-07 | Miniature fluxgate sensor |
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| CN201126470Y true CN201126470Y (en) | 2008-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2007201176228U Expired - Fee Related CN201126470Y (en) | 2007-12-07 | 2007-12-07 | Miniature fluxgate sensor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102576058A (en) * | 2009-09-24 | 2012-07-11 | 罗伯特·博世有限公司 | Performance-optimized actuation of a flux gate sensor |
| CN102944853A (en) * | 2012-10-18 | 2013-02-27 | 华中科技大学 | Method for precisely measuring magnetic field by using noise-driven fluxgate sensor |
| CN105044629A (en) * | 2015-05-18 | 2015-11-11 | 西北工业大学 | Fluxgate sensor feedback circuit |
| CN105203971A (en) * | 2015-10-12 | 2015-12-30 | 无锡清杨机械制造有限公司 | Magnetometer |
| CN106405452A (en) * | 2015-11-20 | 2017-02-15 | 北京纳特斯拉科技有限公司 | Chip-level packaging micro-triaxial fluxgate magnetometer |
| CN108195926A (en) * | 2017-12-29 | 2018-06-22 | 清华大学 | Towards the special fluxgate detector of waters corrosion pipeline |
| CN108226279A (en) * | 2017-12-29 | 2018-06-29 | 清华大学 | Towards the special fluxgate detector of buried corrosion pipeline |
| RU213388U1 (en) * | 2022-06-01 | 2022-09-08 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Удмуртский государственный университет" | Ferroprobe magnetometer |
-
2007
- 2007-12-07 CN CNU2007201176228U patent/CN201126470Y/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102576058A (en) * | 2009-09-24 | 2012-07-11 | 罗伯特·博世有限公司 | Performance-optimized actuation of a flux gate sensor |
| CN102944853A (en) * | 2012-10-18 | 2013-02-27 | 华中科技大学 | Method for precisely measuring magnetic field by using noise-driven fluxgate sensor |
| CN102944853B (en) * | 2012-10-18 | 2015-07-29 | 华中科技大学 | A kind of method of the fluxgate sensor precision measurement magnetic field utilizing noise to drive |
| CN105044629A (en) * | 2015-05-18 | 2015-11-11 | 西北工业大学 | Fluxgate sensor feedback circuit |
| CN105044629B (en) * | 2015-05-18 | 2018-06-19 | 西北工业大学 | A kind of fluxgate sensor feedback circuit |
| CN105203971A (en) * | 2015-10-12 | 2015-12-30 | 无锡清杨机械制造有限公司 | Magnetometer |
| CN106405452A (en) * | 2015-11-20 | 2017-02-15 | 北京纳特斯拉科技有限公司 | Chip-level packaging micro-triaxial fluxgate magnetometer |
| CN108195926A (en) * | 2017-12-29 | 2018-06-22 | 清华大学 | Towards the special fluxgate detector of waters corrosion pipeline |
| CN108226279A (en) * | 2017-12-29 | 2018-06-29 | 清华大学 | Towards the special fluxgate detector of buried corrosion pipeline |
| RU213388U1 (en) * | 2022-06-01 | 2022-09-08 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Удмуртский государственный университет" | Ferroprobe magnetometer |
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| CF01 | Termination of patent right due to non-payment of annual fee |