CN201121220Y - Double-layer quartz capsule reactor for liquid phase epitaxy - Google Patents
Double-layer quartz capsule reactor for liquid phase epitaxy Download PDFInfo
- Publication number
- CN201121220Y CN201121220Y CNU2007200649205U CN200720064920U CN201121220Y CN 201121220 Y CN201121220 Y CN 201121220Y CN U2007200649205 U CNU2007200649205 U CN U2007200649205U CN 200720064920 U CN200720064920 U CN 200720064920U CN 201121220 Y CN201121220 Y CN 201121220Y
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- China
- Prior art keywords
- silica tube
- quartz tube
- tube
- double
- wafer
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Abstract
The utility model relates to a double layer quartz tube reactor for liquid phase epitaxy, which comprises an outer quartz tube (2) with a discharging outlet (5) arranged at one end and the other end is a sealed end, an inner quartz tube (1) with both opened end is arranged inside the outer quartz tube (2) and the outside of one end of the inner quartz tube (1) is connected by sealing with the end arranged with the discharging outlet (5) of the outer quartz tube (2), the other end of the inner quartz tube (1) and the outer wall of the tube body and the inner wall of the outer quartz tube (2) is left with a clearance, a wafer boat (3) held with wafer (4) is arranged inside the inner quartz tube (1). The utility model can guide the flowing of hydrogen, which makes the hydrogen stably and uniformly flow over the liquid reagent, and therefore the uniform epitaxy is realized.
Description
Technical field
The utility model relates to a kind of reaction unit, further is meant the reaction unit that is used for III/V family or II/IV compounds of group rheotaxy (LPE).
Background technology
Vapour phase epitaxy (VPE), rheotaxy (LPE), molecular beam epitaxy (MBE) and organometallics vapour phase epitaxy (MOCVD) all are the thin film epitaxy technology of using always.Rheotaxy (LPE) though method use early, because of have the good and economic Buddhist monk can quality of forming film, still be widely adopted so far, be a kind of industrialized economical and practical technology.Its epitaxially grown ultimate principle is: with a substrate wafer that is heated to proper temperature, be impregnated in the liquefied compound that contains III/V family or II/IV family element, on substrate, grow thin-film material by decrease temperature crystalline with specific components, specific thicknesses, particular electrical and optical parametric.
The LPE epitaxy need be carried out in reducing atmosphere, generally adopts hydrogen (H
2) set up reducing atmosphere, be not subjected to the pollution of impurity for keeping liquid reactant, adopt high-purity hydrogen usually.But it is not enough only adopting high-purity hydrogen, also should allow flow hydrogen gas, make hydrogen at every moment keep flowing through liquid reactant freshly, to consider also that to the extension reaction unit that is used to produce air-flow should stably flow through liquid reactant equably, only in this way could guarantee the not contaminated and density of epitaxial wafer, uniform component distribution, otherwise the epitaxial thin film material that will be not being met and require.
The utility model content
Problem to be solved in the utility model is, proposes the double-deck quartz tube reactor of a kind of rheotaxy, and it can flow the hydrogen guiding, makes hydrogen stable and flow through liquid reactant equably, thereby realizes extension equably.
The technical solution of the utility model is, described rheotaxy with the structure of double-deck quartz tube reactor is: it has an end to be provided with the air outlet and the other end is the outer silica tube of blind end, two ends are open interior silica tube and place the end outside of this outer silica tube and described interior silica tube to become to be tightly connected with the end that this outer silica tube is provided with the air outlet, leave the gap between the inwall of the other end of silica tube and tube wall and described outer silica tube in described, the wafer boat that wafer is housed places described interior silica tube.
Below the utility model is further specified.
Referring to Fig. 1, rheotaxy described in the utility model with the structure of double-deck quartz tube reactor is: it has an end to be provided with air outlet 5 and the other end is the outer silica tube 2 of blind end, two ends are open interior silica tube 1 and place an end 6 outsides of this outer silica tube 2 and described interior silica tube 1 to become to be tightly connected with the end that this outer silica tube 2 is provided with air outlet 5, leave the gap between the inwall of the other end of silica tube 1 and tube wall and described outer silica tube 2 in described, the wafer boat 3 that wafer 4 is housed places described interior silica tube 1.
Principle of design of the present utility model is: adopt double-deck silica tube, allow hydrogen flow to the other end through wafer boat in the inside of interior silica tube 1 from an end, be that interlayer between the two-layer silica tube then allows hydrogen flow to this end from the described the other end in the outside of interior silica tube 1, gas unidirectional is forced to by channel flow, control the distribution of air-flow and admission piece, outlet nozzle simultaneously, make steady air current and flow equably.Specifically, shown in arrow among Fig. 1, gas enters interior silica tube 1 inside (being reaction chamber) from an end (left end) 6 of interior silica tube 1, the right-hand member of silica tube 1 in wafer boat 3 flows to, again through the outside of interior silica tube 1 promptly in interlayer between silica tube 1 and the outer silica tube 2 flow to the left end of outer silica tube 2, final 5 flow direction outsides, air outlet from outer silica tube 2 left ends.Interior silica tube 1 is the body of both ends open, and outer silica tube 2 is all sealings of all the other places except that air outlet 6, and its left end and the 1 sealing welding of interior silica tube.Gas leads in whole pipe and flows, and can not leak, and this makes the gas around the wafer boat 3 fresh all the time pure.At one end the admission piece at (inlet end) 6 places is designed to distributedly, and flow is controlled, thereby the air-flow of silica tube 1 is that to be laminar flow up and down equally distributed in flowing to.
As known from the above, the utility model is the double-deck quartz tube reactor of a kind of rheotaxy, and it can flow hydrogen guiding, makes hydrogen stable and flow through liquid reactant (wafer) equably, thereby realizes extension equably.
Description of drawings:
Fig. 1 is the structural representation of a kind of embodiment of the utility model, and wherein arrow is gas flow.
In the accompanying drawings:
Silica tube in the 1-, the outer silica tube of 2-, the 3-wafer boat,
The 4-wafer, 5-air outlet, 6-one end.
Embodiment:
According to the double-deck quartz tube reactor of the rheotaxy of Fig. 1 and said structure, for being used for the reaction unit of rheotaxy equipment, it has an end to be provided with air outlet 5 and the other end is the outer silica tube 2 of blind end, two ends are open interior silica tube 1 and place an end 6 outsides of this outer silica tube 2 and described interior silica tube 1 to become to be tightly connected with the end that this outer silica tube 2 is provided with air outlet 5, leave the gap between the inwall of the other end of silica tube 1 and tube wall and described outer silica tube 2 in described, the wafer boat 3 that wafer 4 is housed places described interior silica tube 1.
In this device, interior silica tube 1 promptly as the cantilever bogey of wafer boat 3, is born the air-flow guide effect again, and interior silica tube 1 is circular, external diameter Φ 90mm, wall thickness 5mm, long 800mm; Outer silica tube 2 also is circular, external diameter Φ 110mm, wall thickness 5mm, long 850mm; Utilize this device,, make compact integral structure, dwindled the occupation of land size because input and output gas is arranged in an end of whole reactor.Be applied to the growth of HgCdTe epitaxial material, material component is even after tested, consistency of thickness.
Claims (1)
1. double-deck quartz tube reactor of rheotaxy, it is characterized in that, it has an end to be provided with air outlet (5) and the other end is the outer silica tube (2) of blind end, two ends are open interior silica tube (1) and place an end (6) outside of this outer silica tube (2) and described interior silica tube (1) to become to be tightly connected with the end that this outer silica tube (2) is provided with air outlet (5), leave the gap between the inwall of the other end of silica tube (1) and tube wall and described outer silica tube (2) in described, the wafer boat (3) that wafer (4) are housed places described interior silica tube (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200649205U CN201121220Y (en) | 2007-11-02 | 2007-11-02 | Double-layer quartz capsule reactor for liquid phase epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200649205U CN201121220Y (en) | 2007-11-02 | 2007-11-02 | Double-layer quartz capsule reactor for liquid phase epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201121220Y true CN201121220Y (en) | 2008-09-24 |
Family
ID=40008446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200649205U Expired - Lifetime CN201121220Y (en) | 2007-11-02 | 2007-11-02 | Double-layer quartz capsule reactor for liquid phase epitaxy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201121220Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105508745A (en) * | 2016-01-07 | 2016-04-20 | 湖州奥博石英科技有限公司 | Quartz tube |
| CN106435718A (en) * | 2016-11-25 | 2017-02-22 | 中国科学院上海技术物理研究所 | Quartz sleeve for high-airtightness tellurium cadmium mercury vapor phase epitaxy |
-
2007
- 2007-11-02 CN CNU2007200649205U patent/CN201121220Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105508745A (en) * | 2016-01-07 | 2016-04-20 | 湖州奥博石英科技有限公司 | Quartz tube |
| CN106435718A (en) * | 2016-11-25 | 2017-02-22 | 中国科学院上海技术物理研究所 | Quartz sleeve for high-airtightness tellurium cadmium mercury vapor phase epitaxy |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20080924 |