CN201118088Y - Semiconductor end-face pumped all-solid laser - Google Patents
Semiconductor end-face pumped all-solid laser Download PDFInfo
- Publication number
- CN201118088Y CN201118088Y CNU2007201709881U CN200720170988U CN201118088Y CN 201118088 Y CN201118088 Y CN 201118088Y CN U2007201709881 U CNU2007201709881 U CN U2007201709881U CN 200720170988 U CN200720170988 U CN 200720170988U CN 201118088 Y CN201118088 Y CN 201118088Y
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Abstract
The utility model provides a semiconductor end-pumped solid laser, comprising a laser case, a tube core and a fan, which is characterized in that: a cavity is arranged on the laser case; the tube core is arranged in the cavity; the fan is arranged on one end of the laser case; an LD and a crystal opposite to the LD are arranged in the tube core; a plurality of guiding channels for the air current of the fan to flow are arranged on the laser case; the extending direction of the guiding channels is the same with the extending direction of the tube core. The fan is arranged on one end of the laser case of the semiconductor end-pumped solid laser, and the plurality of guiding channels are arranged on the case, the air current is guided out along the guiding channels, thus providing an effective convective heat dissipation from the case quickly with good heat radiating effect.
Description
[technical field]
The utility model relates to a kind of laser, relates in particular to a kind of pumped at end face of semiconductor all solid laser.
[background technology]
At present, the pumped at end face of semiconductor all solid laser adopts closed loop thermal control to heater members such as LD (Laser Disc, videodisc), crystal, and the shell of laser is sealed in LD and crystal in it, establish fan by a end, laser is dispelled the heat by fan at laser.This kind structure fan only can dispel the heat to an end end of laser, and is bad to laser integral heat sink effect.
Present laser goes out luminous power can be more than 50mw, and such laser is because power is bigger, so all devices all adopt isolating construction, each device all needs to fix by independent support, and support is fixed on the big radiating bottom plate more then.The fixing screw that all needs of above-mentioned laser stent, in the debugging of reality, frequent locking and unclamp screw, reduced production efficiency, all devices are all fixed on the base plate by support, device has only a contact-making surface by support to the heat loss through conduction of radiating bottom plate, and heat transfer efficiency is lower, is easy to generate thermal stress and mechanical stress.The processing cost of support and laser shell is higher.
The luminous power that goes out of present laser also can be in 50mw (milliwatt), and does not have temperature Control and Feedback system.Such laser generally uses microplate gummed crystal, and promptly laser crystal and frequency-doubling crystal adopt special material to be bonded together.The crystalline size of above-mentioned laser is less, can't adopt the method for machinery to fix to clamp, so use adhesive more.Described crystal is after fixing on the support, and the position of the relative LD of support needs to adjust, and uses adhesive at last again.The fixing of device all uses adhesive in this scheme, makes the adhesive contamination device surface in process of production easily; In the aging of client's use vibrations, adhesive and volatilization, all cause the decay of laser and power easily than great fluctuation process; The very strong structure glue of employing bonding force that has is fixed, but in general, the curing time of this adhesive is longer, has reduced production efficiency.The heat loss through conduction of LD can only carry out from its heat sink surface, and all the other faces can only rely on heat loss through radiation, have reduced heat transfer efficiency.
[utility model content]
Technical problem to be solved in the utility model is to provide a kind of pumped at end face of semiconductor all solid laser, its good heat dissipation effect.
For solving the problems of the technologies described above, the technical solution of the utility model is: a kind of pumped at end face of semiconductor all solid laser is provided, comprises laser shell, tube core and fan, described laser shell is provided with cavity, described tube core places in the cavity, and described fan is located at an end of laser shell; Be provided with LD and the crystal relative in the described tube core with the LD position; Offer the distinguished and admirable mobile flow-guiding channel of a plurality of air feed fans on the described laser shell, the bearing of trend of described flow-guiding channel is identical with the bearing of trend of tube core.
Be provided with cavity in the tube core of described pumped at end face of semiconductor all solid laser, be provided with the tube core back seat in cavity, have accommodation space in the described tube core back seat, described LD and crystal are arranged in the accommodation space.
The cavity of the accommodation space of described pumped at end face of semiconductor all solid laser for forming according to the structure die sinking that places its inner LD and crystal.
Cavity on the laser shell of described pumped at end face of semiconductor all solid laser and tube core are the circle symmetrical structure.
The cavity of described laser shell and tube core interference fit.
Compared with prior art, above-mentioned pumped at end face of semiconductor all solid laser is installed fan at an end of laser shell, and offers a plurality of flow-guiding channels on shell, distinguished and admirablely derives along flow-guiding channel, thereby make heat fast and effeciently from shell heat loss through convection, good heat dissipation effect.
In addition, in tube core, be provided with the tube core back seat, the internal structure of described tube core back seat forms according to the structure die sinking of elements such as LD, crystal and crystal cartridge, make the machining accuracy of fixing complete dependency structure spare of LD and crystal position, only use a spot of structure glue, less light path is polluted, and only needs the rotating crystal support to do fine setting when adjusting, and can boost productivity.
Moreover described cavity and tube core all adopt round symmetrical structure, utilize the precision of machined piece to guarantee the centering of the geometric center of LD and crystal, and justify the difficult generation of symmetrical structure mechanical deformation.The cavity of laser shell and tube core interference fit can make tube core contact well with the laser shell, thereby guarantee the quick conduction of heat from tube core to the laser shell.
[description of drawings]
Fig. 1 is the cross-sectional schematic of the utility model one preferred embodiment.
Fig. 2 is a schematic side view embodiment illustrated in fig. 1.
[embodiment]
In order to make technical problem to be solved in the utility model, technical scheme and beneficial effect clearer,, the utility model is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the utility model, and be not used in qualification the utility model.
See also Fig. 1 and Fig. 2, it is a preferred embodiment of the utility model pumped at end face of semiconductor all solid laser, it comprises laser shell 1, tube core 2 and fan 3, described laser shell 1 is provided with cavity 10, described tube core 2 places in the cavity 10, and,, thereby guarantee the quick conduction of heat from tube core 2 to laser shell 1 so that tube core 2 can contact well with laser shell 1 with cavity 10 interference fit.Offer a plurality of flow-guiding channels 12 on shell 1, described flow-guiding channel 12 is looped around around the tube core 2, and the bearing of trend of flow-guiding channel 12 is identical with the bearing of trend of tube core 2.Described fan 3 is located at an end of laser shell 1, and when fan 3 started, cold wind flowed in flow-guiding channel 12, can dispel the heat to tube core 2 integral body in the laser shell 1.Described cavity 10 and tube core 2 all adopt the circle symmetrical structure.
Be provided with cavity 20 in the described tube core 2, be provided with tube core back seat 21, in tube core back seat 21, offer accommodation space (among the figure indicate) in cavity 20, can ccontaining LD 22 in the described accommodation space, crystal 23 and crystal cartridge 24.Described crystal 23 is installed in a side of crystal cartridge 24, and the other end of crystal cartridge 24 is provided with crystal trim ring 26; LD 22 is located at a side of crystal 23, and and crystal 23 between be provided with convex lens 25, the other end of LD 22 is provided with LD trim ring 28.Described crystal trim ring 26 and LD trim ring 28 can play the effect of sealing and dustproof.The internal structure of described accommodation space forms according to the structure die sinking of elements such as LD 22, crystal 23 and crystal cartridge 24, make the machining accuracy of fixing complete dependency structure spare of position of LD 22 and crystal 23, the clamping of LD 22 and crystal 23 adopts jackscrew to clamp from end face.
Above-mentioned pumped at end face of semiconductor all solid laser is installed fan 3 at an end of laser shell 1, and offers a plurality of flow-guiding channels 12 on shell 1, and is distinguished and admirable along flow-guiding channel 12 derivation, thereby makes heat fast and effeciently from shell 1 heat loss through convection.In tube core 2, be provided with tube core back seat 21, the internal structure of described tube core back seat 21 forms according to the structure die sinking of elements such as LD 22, crystal 23 and crystal cartridge 24, make the machining accuracy of fixing complete dependency structure spare of LD 22 and crystal 23 positions, only use a spot of structure glue, less light path is polluted, and when adjusting, only need rotating crystal support 24 to do fine setting, can boost productivity.Described cavity 10 and tube core 2 all adopt justifies symmetrical structure, utilizes the precision of machined piece to guarantee the centering of the geometric center of LD 22 and crystal 23, and justifies the difficult generation of symmetrical structure mechanical deformation.One end of described crystal cartridge 24 is provided with crystal trim ring 26, and the end of LD 22 is provided with LD trim ring 28, makes tube core 2 overall structures seal, and interference fits between the device, and the gap is little, has reduced the possibility of contamination by dust.
The above only is preferred embodiment of the present utility model; not in order to restriction the utility model; all any modifications of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the protection range of the present utility model.
Claims (8)
1. a pumped at end face of semiconductor all solid laser comprises laser shell, tube core and fan, and described laser shell is provided with cavity, and described tube core places in the cavity, and described fan is located at an end of laser shell; Be provided with LD and the crystal relative in the described tube core with the LD position; It is characterized in that: offer the distinguished and admirable mobile flow-guiding channel of a plurality of air feed fans on the described laser shell, the bearing of trend of described flow-guiding channel is identical with the bearing of trend of tube core.
2. pumped at end face of semiconductor all solid laser as claimed in claim 1 is characterized in that: described flow-guiding channel is looped around around the tube core.
3. pumped at end face of semiconductor all solid laser as claimed in claim 1 is characterized in that: be provided with cavity in the described tube core, be provided with the tube core back seat in cavity, offer accommodation space in the described tube core back seat, described LD and crystal are arranged in the accommodation space.
4. pumped at end face of semiconductor all solid laser as claimed in claim 3 is characterized in that: also be provided with crystal cartridge in the described accommodation space, described crystal is installed in a side of crystal cartridge, and LD is located at a side of crystal, and and crystal between be provided with convex lens.
5. pumped at end face of semiconductor all solid laser as claimed in claim 4 is characterized in that: an end of described crystal cartridge is provided with the crystal trim ring; The end of LD is provided with the LD trim ring.
6. as any described pumped at end face of semiconductor all solid laser in the claim 1 to 5, it is characterized in that: the cavity of described accommodation space for forming according to the structure die sinking that places its inner LD and crystal.
7. pumped at end face of semiconductor all solid laser as claimed in claim 1 is characterized in that: cavity on the described laser shell and tube core are the circle symmetrical structure.
8. as claim 1 or 7 described pumped at end face of semiconductor all solid lasers, it is characterized in that: the cavity of described laser shell and tube core interference fit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201709881U CN201118088Y (en) | 2007-11-23 | 2007-11-23 | Semiconductor end-face pumped all-solid laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201709881U CN201118088Y (en) | 2007-11-23 | 2007-11-23 | Semiconductor end-face pumped all-solid laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201118088Y true CN201118088Y (en) | 2008-09-17 |
Family
ID=39992676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201709881U Ceased CN201118088Y (en) | 2007-11-23 | 2007-11-23 | Semiconductor end-face pumped all-solid laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201118088Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386552A (en) * | 2010-09-06 | 2012-03-21 | 苏州大恒光学精密机械有限公司 | Radiating device of laser |
| CN102386551A (en) * | 2010-09-06 | 2012-03-21 | 苏州大恒光学精密机械有限公司 | Radiating device for laser |
| CN102801087A (en) * | 2012-08-13 | 2012-11-28 | 嘉兴市光辰光电科技有限公司 | Non-gel solid laser |
| CN104111224A (en) * | 2013-04-22 | 2014-10-22 | 横河电机株式会社 | Semiconductor light source unit and object measuring device |
| CN104111224B (en) * | 2013-04-22 | 2016-11-30 | 横河电机株式会社 | Semiconductor light source unit and object measurement apparatus |
| CN107370009A (en) * | 2017-07-20 | 2017-11-21 | 成都聚芯光科通信设备有限责任公司 | Radiating efficiency can be improved is closely assembled optical fiber cooling mechanism |
-
2007
- 2007-11-23 CN CNU2007201709881U patent/CN201118088Y/en not_active Ceased
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386552A (en) * | 2010-09-06 | 2012-03-21 | 苏州大恒光学精密机械有限公司 | Radiating device of laser |
| CN102386551A (en) * | 2010-09-06 | 2012-03-21 | 苏州大恒光学精密机械有限公司 | Radiating device for laser |
| CN102801087A (en) * | 2012-08-13 | 2012-11-28 | 嘉兴市光辰光电科技有限公司 | Non-gel solid laser |
| CN102801087B (en) * | 2012-08-13 | 2016-06-15 | 嘉兴市光辰光电科技有限公司 | Non-gel solid laser |
| CN104111224A (en) * | 2013-04-22 | 2014-10-22 | 横河电机株式会社 | Semiconductor light source unit and object measuring device |
| CN104111224B (en) * | 2013-04-22 | 2016-11-30 | 横河电机株式会社 | Semiconductor light source unit and object measurement apparatus |
| CN107370009A (en) * | 2017-07-20 | 2017-11-21 | 成都聚芯光科通信设备有限责任公司 | Radiating efficiency can be improved is closely assembled optical fiber cooling mechanism |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: Guangdong city of Shenzhen province Futian District Meihua road Chardonnay Industrial Zone 2 Building 4 floor room 2410, zip code: 518000 Patentee after: SHENZHEN OPTLASER TECHNOLOGIES CO., LTD. Address before: Longgang District of Shenzhen City, Guangdong Province, Buji state court Guoyao Taiwan 29D, zip code: 518000 Patentee before: SHENZHEN OPTLASER TECHNOLOGIES CO., LTD. |
|
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN CITY AOPUDA OPTO-ELECTRICAL TECHNOLOGY CO Free format text: NEW ADDRESS: ROOM 2410, HOUSE 4, BUILDING 2, DUOLI INDUSTRY DISTRICT, MEIHUA ROAD, FUTIAN DISTRICT,SHENZHEN CITY, GUANGDONG PROVINCE, ZIP CODE:518000 |
|
| C35 | Partial or whole invalidation of patent or utility model | ||
| IW01 | Full invalidation of patent right |
Decision date of declaring invalidation: 20100319 Decision number of declaring invalidation: 14586 Granted publication date: 20080917 |