CN102801087A - Non-gel solid laser - Google Patents
Non-gel solid laser Download PDFInfo
- Publication number
- CN102801087A CN102801087A CN2012102873573A CN201210287357A CN102801087A CN 102801087 A CN102801087 A CN 102801087A CN 2012102873573 A CN2012102873573 A CN 2012102873573A CN 201210287357 A CN201210287357 A CN 201210287357A CN 102801087 A CN102801087 A CN 102801087A
- Authority
- CN
- China
- Prior art keywords
- crystal
- heat sink
- module
- solid state
- state laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Lasers (AREA)
Abstract
The invention provides a non-gel solid laser. The non-gel solid laser comprises a top cover, a crystal module, an LD (Laser Diode) module and a sleeve in sequence from top to bottom, wherein the crystal module comprises a crystal heat sink, a crystal corner and a crystal; the crystal corner is fixed on the crystal heat sink; the crystal is placed between the crystal corner and the crystal heat sink; a step is arranged on the crystal corner; the crystal is arranged on the step; a square hole is formed in the crystal heat sink; the crystal corner is arranged in the square hole of the crystal heat sink; two jackscrews are arranged on the side surface of the crystal heat sink; and the crystal heat sink is fixed together with the crystal corner by the jackscrews. The non-gel solid laser provided by the invention has the advantages of stable structure, strong heat conductivity, long service life and so on.
Description
Technical field
The present invention relates to the laser equipment field, be specifically related to be used to produce the no glue solid state laser of light source.
Background technology
Laser is the device that utilizes the stimulated radiation principle that light is amplified in the material that some is stimulated or vibrate and launch.Except free electron laser; The basic functional principle of various lasers is all identical; Lasing essential condition is population inversion and the loss of gain serious offense, so requisite part has driving source, has two parts of working media of metastable energy level in the device.Excitation is to be energized into excitation state after working media absorbs external energy, creates conditions for realizing and keeping population inversion.Energisation mode has optical excitation, electric excitation, chemical pumping and nuclear energy excitation energy.Part common in the laser also has resonant cavity, but resonant cavity is not requisite part, and resonant cavity can make the photon in the chamber that consistent frequency, phase place and traffic direction are arranged, thereby makes laser have good directivity and coherence.And it can shorten the length of operation material well, can also regulate lasing pattern through changing cavity length, so general laser all has resonant cavity.Traditional laser comprises the crystal module that produces light source, the LD module that is used to make the reduction of laser internal temperature that engages with crystal module.In the prior art, through colloid that each module in the crystal module is bonding, through colloid that crystal module, LD module etc. are bonding; Prolongation along with service time; Be easy to generate phenomenon such as come unstuck, shortened the useful life of laser, the too much use of colloid has simultaneously reduced the thermal conductivity of crystal module etc.; Make the inner heat accumulation that produces of laser, influence the use of laser.
Summary of the invention
Technical problem to be solved by this invention is to provide no glue solid state laser, has advantages such as Stability Analysis of Structures, thermal conductivity are strong, long service life.
For solving above-mentioned existing technical problem; The present invention adopts following scheme: no glue solid state laser, comprise top cover, crystal module, LD module, sleeve from top to bottom successively, and said crystal module comprises that crystal is heat sink, be fixed on the crystal turning of crystal on heat sink, be placed on crystal turning and the crystal crystal between heat sink; Said crystal turning is provided with step; Said crystal is located on the step, and said crystal is heat sink to be provided with square hole, and said crystal turning is located in the heat sink square hole of crystal; The side that said crystal is heat sink is provided with two jackscrews, and said crystal is heat sink and the crystal turning is fixed through jackscrew.
As preferably, said crystal is provided with one deck heat-conducting layer outward, thereby the heat that crystal is produced can be derived fast.
As preferably, said heat-conducting layer adopts indium, thus guaranteed the heat conduction fast with thoroughly.
As preferably, said top cover outer ring is provided with the M20 screw buckle, and said sleeve is provided with the M20 screwed hole that cooperates snapping with the M20 screw buckle of top cover outer ring, thereby has avoided the use of colloid, makes laser structure more stable, has prolonged the useful life of laser.
As preferably, said top cover is provided with light-emitting window.
As preferably, said LD module comprises LD, LD is heat sink, and said LD is heat sink to be provided with the groove that is used to place LD, thereby makes the structure of LD module more stable.
As preferably, the heat sink bottom of said LD is with one deck insulating heat-conductive film, thereby strengthened the whole heat conductivility of laser, can effectively derive the inner heat that produces of laser.
As preferably, said LD is heat sink to be provided with first screw hole that is used for fixing LD, is used for fixing the second heat sink screw hole of crystal, thereby makes the laser overall structure more stable, has avoided the use of colloid simultaneously, has prolonged the useful life of laser.
Beneficial effect:
The no glue solid state laser that the present invention adopts technique scheme to provide can make the structure of laser more stable, has prolonged the useful life of laser, simultaneously, has avoided the use of colloid and causes the thermal conductivity of crystal module etc. to reduce.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the heat sink structural representation of LD among the present invention.
Among the figure, top cover 1, M20 screw buckle 11, light-emitting window 12, crystal module 2, crystal is heat sink 21, square hole 211, crystal turning 22, step 221, crystal 23, LD module 3, LD31, LD is heat sink 32, first screw hole 321, second screw hole 322, groove 33, sleeve 4, M20 screwed hole 41, jackscrew 5, heat-conducting layer 6, insulating heat-conductive film 7.
Embodiment
Shown in Fig. 1-2, no glue solid state laser comprises top cover 1, crystal module 2, LD module 3, sleeve 4 from top to bottom successively; Said crystal module 2 comprises that crystal is heat sink 21, be fixed on crystal turning 22 on the crystal heat sink 21, be placed on the crystal 23 between crystal turning 22 and the crystal heat sink 21, and said crystal turning 22 is provided with step 221, and said crystal 23 is located on the step 221; Said crystal is heat sink 21 to be provided with square hole 211; Said crystal turning 22 is located in the square hole 211 of crystal heat sink 21, and said crystal is heat sink, and 21 side is provided with two jackscrews 5, and it is 21 fixing through jackscrew 5 with crystal turning 22 that said crystal is heat sink; The said crystal 23 outer one deck heat-conducting layers 6 that are provided with; Said heat-conducting layer 6 adopts indium, and said top cover 1 outer ring is provided with M20 screw buckle 11, and said sleeve 4 is provided with the M20 screwed hole 41 that cooperates snapping with the M20 screw buckle 11 of top cover 1 outer ring; Said top cover 1 is provided with light-emitting window 12; Said LD module 3 comprises LD31, LD is heat sink 32, and said LD is heat sink 32 to be provided with the groove 33 that is used to place LD31, and said LD is heat sink 32 bottoms are with one deck insulating heat-conductive film 7; Said LD is heat sink 32 to be provided with first screw hole 321 that is used for fixing LD31, is used for fixing second screw hole 322 of crystal heat sink 21.
During real work, crystal 23 is installed on the step 221 at crystal turning 22, crystal turning 22 is installed in the square hole 211 of crystal heat sink 21; Jackscrew 5 is pushed up on the crystal turning 22; Crystal turning 22 is fixed in the square hole 211, LD31 is fixed on the LD heat sink 32, then LD module 3 and crystal module 2 are coupled; Form diode pumped solid state laser; Pass crystal heat sink 21 with bolt and be fixed on second screw hole 322 on the LD heat sink 32, solid state laser is installed in the sleeve 4, be screwed into top cover 1 in the M20 screwed hole 41 of sleeve 4.
Specific embodiment described herein only is that the present invention's spirit is illustrated.Person of ordinary skill in the field of the present invention can make various modifications or replenishes or adopt similar mode to substitute described specific embodiment, but can't depart from spirit of the present invention or surmount the defined scope of appended claims.
Although the possibility of using other term do not got rid of in terms such as this paper has used top cover 1, M20 screw buckle 11, light-emitting window 12, crystal module 2, crystal is heat sink 21, square hole 211, crystal turning 22, step 221, crystal 23, LD module 3, LD31, LD is heat sink 32, first screw hole 321, second screw hole 322, groove 33, sleeve 4, M20 screwed hole 41, jackscrew 5, heat-conducting layer 6, insulating heat-conductive film 7 morely.Using these terms only is in order to describe and explain essence of the present invention more easily; It all is contrary with spirit of the present invention being construed to any additional restriction to them.
Claims (8)
1. there is not the glue solid state laser; Comprise top cover (1), crystal module (2), LD module (3), sleeve (4) from top to bottom successively; Said crystal module (2) comprises crystal heat sink (21), be fixed on crystal turning (22) on the crystal heat sink (21), be placed on the crystal (23) between crystal turning (22) and the crystal heat sink (21); Said crystal turning (22) is provided with step (221); Said crystal (23) is located on the step (221), and said crystal is heat sink (21) is provided with square hole (211), and said crystal turning (22) is located in the square hole (211) of crystal heat sink (21); It is characterized in that: the side that said crystal is heat sink (21) is provided with two jackscrews (5), and it is fixing through jackscrew (5) with crystal turning (22) that said crystal is heat sink (21).
2. no glue solid state laser according to claim 1 is characterized in that: the outer one deck heat-conducting layer (6) that is provided with of said crystal (23).
3. no glue solid state laser according to claim 2 is characterized in that: said heat-conducting layer (6) adopts indium.
4. no glue solid state laser according to claim 1; It is characterized in that: said top cover (1) outer ring is provided with M20 screw buckle (11), and said sleeve (4) is provided with the M20 screwed hole (41) that cooperates snapping with the M20 screw buckle (11) of top cover (1) outer ring.
5. no glue solid state laser according to claim 1 is characterized in that: said top cover (1) is provided with light-emitting window (12).
6. no glue solid state laser according to claim 1 is characterized in that: said LD module (3) comprises LD (31), LD is heat sink (32), and said LD is heat sink (32) is provided with the groove (33) that is used to place LD (31).
7. no glue solid state laser according to claim 6 is characterized in that: said LD is heat sink (32), and the bottom has one deck insulating heat-conductive film (7).
8. no glue solid state laser according to claim 6 is characterized in that: said LD is heat sink (32) is provided with first screw hole (321) that is used for fixing LD (31), is used for fixing second screw hole (322) of crystal heat sink (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210287357.3A CN102801087B (en) | 2012-08-13 | 2012-08-13 | Non-gel solid laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210287357.3A CN102801087B (en) | 2012-08-13 | 2012-08-13 | Non-gel solid laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102801087A true CN102801087A (en) | 2012-11-28 |
| CN102801087B CN102801087B (en) | 2016-06-15 |
Family
ID=47200111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210287357.3A Expired - Fee Related CN102801087B (en) | 2012-08-13 | 2012-08-13 | Non-gel solid laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102801087B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001003257A1 (en) * | 1999-07-02 | 2001-01-11 | Asah Medico A/S | A solid-state laser crystal assembly |
| CN2687909Y (en) * | 2003-09-03 | 2005-03-23 | 福州晶阵半导体有限公司 | Short-cavity solid laser |
| CN201113216Y (en) * | 2007-07-24 | 2008-09-10 | 昂纳明达数字显示技术（深圳）有限公司 | Multiple frequency device used for solid laser |
| CN201118088Y (en) * | 2007-11-23 | 2008-09-17 | 深圳市奥普达光电技术有限公司 | Semiconductor end-face pumped all-solid laser |
| CN202373843U (en) * | 2011-10-08 | 2012-08-08 | 于文兵 | Crystal holder for solid laser |
-
2012
- 2012-08-13 CN CN201210287357.3A patent/CN102801087B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001003257A1 (en) * | 1999-07-02 | 2001-01-11 | Asah Medico A/S | A solid-state laser crystal assembly |
| CN2687909Y (en) * | 2003-09-03 | 2005-03-23 | 福州晶阵半导体有限公司 | Short-cavity solid laser |
| CN201113216Y (en) * | 2007-07-24 | 2008-09-10 | 昂纳明达数字显示技术（深圳）有限公司 | Multiple frequency device used for solid laser |
| CN201118088Y (en) * | 2007-11-23 | 2008-09-17 | 深圳市奥普达光电技术有限公司 | Semiconductor end-face pumped all-solid laser |
| CN202373843U (en) * | 2011-10-08 | 2012-08-08 | 于文兵 | Crystal holder for solid laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102801087B (en) | 2016-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2006133238A3 (en) | Method for cooling semiconductor laser diodes and light emitting diodes | |
| CN104538839A (en) | Planar waveguide graphene passive mode-locking laser | |
| Ren et al. | Passively Q-switched microchip lasers based on Yb: YAG/Cr4+: YAG composite crystal | |
| CN100464470C (en) | Double-prism annular cavity side pumping slab solid laser | |
| CN204809628U (en) | Laser | |
| CN104253375B (en) | A kind of high repetition frequency narrow pulse width single-mode green light laser | |
| JPWO2021106757A5 (en) | ||
| CN103986050A (en) | Trapezoidal waveguide coupling self-compensation paratactic double-slat laser amplifier | |
| CN104953446A (en) | Novel diode-pumping immersion-type liquid-cooling solid laser gain pool | |
| JP6124293B2 (en) | Terahertz band optical device waveguide | |
| CN101673919B (en) | Micro solid-state laser module | |
| CN102801087A (en) | Non-gel solid laser | |
| CN202444176U (en) | LD (laser disc) end pumping electro-optical Q-switching green laser | |
| CN108963740B (en) | A kind of plate solid laser pumping gain module | |
| CN103532003A (en) | Side pump laser module for double-wave-length integrated pumping | |
| CN103066486B (en) | Large-power 1064 nm near-infrared laser based on wattle structure | |
| CN202977964U (en) | Large-power 1064nm near-infrared laser based on wattle structure | |
| CN101340052B (en) | Single longitudinal mode laser of semi-conductor pump | |
| CN202817484U (en) | Semiconductor laser fast axis compression device | |
| CN101533986A (en) | Continuous-wave ultraviolet all-solid-state laser with novel structure | |
| CN103390853A (en) | Hectowatt-grade 1.9 mu m solid laser | |
| Pan et al. | Diode-end-Pumped Nd: YAG Ceramic and Crystal Operation at 1,123 nm | |
| Li et al. | High-power, high-efficiency cw diode-pumped Tm: YAP laser emitting at 1.99 μ m | |
| CN203617540U (en) | High-efficient photoelectric conversion device of optical fiber laser | |
| Cui et al. | 500 W Nd: YAG zigzag slab MOPA laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Non-gel solid laser Effective date of registration: 20180108 Granted publication date: 20160615 Pledgee: Bank of Jiaxing science and technology branch of Limited by Share Ltd. Pledgor: JIAXING BRIGHT STAR OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: 2017330000347 |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160615 Termination date: 20210813 |