CN201069780Y - High power white light LED and its chip - Google Patents
High power white light LED and its chip Download PDFInfo
- Publication number
- CN201069780Y CN201069780Y CNU200720072582XU CN200720072582U CN201069780Y CN 201069780 Y CN201069780 Y CN 201069780Y CN U200720072582X U CNU200720072582X U CN U200720072582XU CN 200720072582 U CN200720072582 U CN 200720072582U CN 201069780 Y CN201069780 Y CN 201069780Y
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- groove
- fluorescent material
- white light
- emitting diode
- chip
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Abstract
A large-power white light emitting diode includes a base, and at least one chip and fluorescent power arranged in the base, wherein the chip includes a substrate and a light emitting element, the chip is a vertical light emergent chip, the substrate is provided with a groove, the light emitting element is accommodated in the groove and fixed on the bottom surface of the groove, and the emergent surface of the light emitting diode and the inner wall of the groove form a fluorescent powder accommodation space for accommodating the fluorescent power. The utility model also provides a chip for the large-power white light emitting diode.
Description
[technical field]
The utility model relates to the led technology field, or rather, relates to a kind of encapsulating structure and chip thereof of high-power white light-emitting diode.
[background technology]
Light-emitting diode (LED) is a kind of luminescent device that electric energy is converted into visible light, have that operating voltage is low, power consumption is little, the luminous efficiency height, emission response time is short, and is stable and reliable for performance, in light weight, volume is little, the appearance of series of characteristics such as cost is low, especially heavy-duty diode is the new type light source that 21 century can replace fluorescent lamp lighting by honor.
As shown in Figure 1, existing high-power white light-emitting diode is fixed on light-emitting diode chip for backlight unit 1 in the depressed part that is provided with on the pedestal when encapsulating usually by glue, covers phosphor powder layer 2 then on light-emitting diode chip for backlight unit 1.Yet, Feng Zhuan light-emitting diode is because phosphor powder layer 2 roughly is mushroom in this way, and in uneven thickness, the white light consistency that causes high-power white light-emitting diode to send is poor, thereby the light that light-emitting diode is sent is inhomogeneous, and mixes the color spot that other color is arranged.
[utility model content]
Technical problem to be solved in the utility model is to overcome above-mentioned the deficiencies in the prior art, and a kind of luminous uniform high-power white light-emitting diode and chip thereof are provided.
The utility model is achieved through the following technical solutions: a kind of high-power white light-emitting diode, comprise a pedestal, be arranged at least one chip and fluorescent material in the described pedestal, wherein, described chip comprises substrate and luminous element, described chip is vertical bright dipping cake core, described substrate has a groove, described luminous element is contained in the described groove and is fixed on the bottom surface of described groove, and the exiting surface of described luminous element and the inwall of described groove are enclosed a fluorescent material receiving space of accommodating described fluorescent material.
It is concordant with described substrate upper surface that described fluorescent material is filled the phosphor powder layer upper surface that forms behind the full described fluorescent material receiving space.
The width of described luminous element is suitable with the width of described groove, makes the inwall of luminous element sidewall and groove be close to.
The contact-making surface of described fluorescent material and groove inwall is parallel to described luminous element sidewall.
The inwall of the contact-making surface of described fluorescent material and groove inwall and described and groove is provided with certain angle of inclination.
One reflector is arranged on the described contact-making surface.
A kind of high-power white light-emitting diode chip, comprise substrate and luminous element, it is characterized in that: described chip is vertical bright dipping cake core, described substrate has a groove, described luminous element is contained in the described groove and is fixed on the bottom surface of described groove, and the exiting surface of described luminous element and the inwall of described groove are enclosed a fluorescent material receiving space of accommodating described fluorescent material.
It is concordant with described substrate upper surface that described fluorescent material is filled the phosphor powder layer upper surface that forms behind the full described fluorescent material receiving space.
The width of described luminous element is suitable with the width of described groove, makes the inwall of luminous element sidewall and groove be close to.
The contact-making surface of described fluorescent material and groove inwall is parallel to the contact-making surface of described luminous element sidewall or described fluorescent material and groove inwall and the inwall of described and groove is provided with certain angle of inclination, and a reflector is arranged on the described contact-making surface.
Compared with prior art, the utility model improves by the structure to the chip of high-power white light-emitting diode, above the exiting surface of chip, form a groove, fluorescent material is filled up described groove and make the phosphor powder layer upper surface of formation concordant with described substrate upper surface, has uniformity preferably after making the phosphor powder layer encapsulation in the high-power white light-emitting diode, thereby the white light that makes high-power white light-emitting diode send has consistency preferably, and then has increased substantially uniformity of light that high-power white light-emitting diode sends.
[description of drawings]
Fig. 1 is fluorescent material distribution schematic diagram in the existing package structure for LED.
Fig. 2 is the partial cutaway schematic of the utility model high-power white light-emitting diode.
Fig. 3 is the generalized section of the utility model first embodiment high-power white light-emitting diode chip when not filling fluorescent material.
Fig. 4 is the generalized section of the utility model first embodiment high-power white light-emitting diode chip after filling fluorescent material.
Fig. 5 is the generalized section of the utility model second embodiment high-power white light-emitting diode chip when not filling fluorescent material.
Fig. 6 is the generalized section of the utility model second embodiment high-power white light-emitting diode chip after filling fluorescent material.
[embodiment]
Embodiment one
See also Fig. 2, Fig. 3 and shown in Figure 4, the high-power white light-emitting diode 8 that present embodiment disclosed comprises pedestal 1 with a depressed part, is arranged at least one chip 2 and fluorescent material 3 in pedestal 1 depressed part, wherein, described chip electrode (not shown) electrically connects through the electrode (not shown) of lead-in wire with light-emitting diode.
Described chip 2 comprises substrate 20 and luminous element 21, and wherein, described substrate 20 has the groove (not label) of a vertical stratification, and described luminous element 21 is contained in the groove of described substrate 20, and is fixed on by fixture 22 on the bottom surface 200 of described groove.The width of described luminous element 21 is suitable with the width of described groove, makes luminous element 21 sidewalls 211 be close to the inwall 201 of groove.After described luminous element 21 was contained in the groove of described substrate 20, its exiting surface 210 and the inwall 201 of described groove were enclosed a fluorescent material receiving space 203 of accommodating described fluorescent material 3.It is concordant with described substrate 20 upper surfaces 204 that described fluorescent material 3 is filled phosphor powder layer (not label) upper surface that forms behind the full described fluorescent material receiving space 203.Described chip 2 is a vertical bright dipping cake core, and the light that chip 2 sends penetrates perpendicular to exiting surface 210.In addition, fluorescent material 3 is parallel to described luminous element 21 sidewalls 211 with the contact-making surface 202 of the inwall 201 of the groove of substrate 20, also is provided with a reflector (not shown) on this contact-making surface 202.
Certainly, the same with other high-power white light-emitting diode encapsulating structures, equally also will cover encapsulating material forms lens 5 in this pedestal 1 top to the light-emitting diode 8 that the utility model disclosed, and these structures are disclosed by prior art, and the utility model repeats no more.
Embodiment two
See also Fig. 2, Fig. 5 and shown in Figure 6, the high-power white light-emitting diode 8 that present embodiment disclosed comprises pedestal 1 with a depressed part, is arranged at least one chip 2 and fluorescent material 3 in pedestal 1 depressed part, wherein, described chip electrode (not shown) electrically connects through the electrode (not shown) of lead-in wire with light-emitting diode.
Described chip 2 comprises substrate 20 and luminous element 21, and wherein, described substrate 20 has a groove (not label), and described luminous element 21 is contained in the groove of described substrate 20, and is fixed on by fixture 22 on the bottom surface 200 of described groove.The width of described luminous element 21 is suitable with the width of described groove, makes luminous element 21 sidewalls 211 be close to the inwall 201 of groove.After described luminous element 21 was contained in the groove of described substrate 20, its exiting surface 210 and the inwall 201 of described groove were enclosed a fluorescent material receiving space 203 ' of accommodating described fluorescent material 3.It is concordant with described substrate 20 upper surfaces 204 ' that described fluorescent material 3 is filled phosphor powder layer (not label) upper surface that forms behind the full described fluorescent material receiving space 203 '.Described chip 2 is a vertical bright dipping cake core, and the light that chip 2 sends penetrates perpendicular to exiting surface 210.In addition, also be provided with a reflector (not shown) on the contact-making surface 202 ' of the inwall 201 of the groove of fluorescent material 3 and substrate 20, described contact-making surface 202 ' is provided with certain angle of inclination with described inwall 201 with groove.
Certainly, the same with other high-power white light-emitting diode encapsulating structures, equally also will cover encapsulating material forms lens 5 in this pedestal 1 top to the high-power white light-emitting diode 8 that present embodiment disclosed, and these structures are disclosed by prior art, and the utility model repeats no more.
The utility model improves by the structure to the chip 2 of high-power white light-emitting diode 8, above the exiting surface 210 of chip 2, form a groove, fluorescent material 3 is filled up described groove and make the phosphor powder layer upper surface of formation concordant with described substrate 20 upper surfaces 204 (204 '), has uniformity preferably after making the phosphor powder layer encapsulation in the high-power white light-emitting diode 8, thereby the light that makes high-power white light-emitting diode send has consistency preferably, hot spot is more even, and then has improved the illuminating effect of high-power white light-emitting diode effectively.
More than describing is embodiment of the present utility model only, forgives and can understand, and under the prerequisite that does not depart from the utility model design, all should be included within the technical conceive of the present utility model simple modification of the present utility model and replacement.
Claims (10)
1. high-power white light-emitting diode, comprise a pedestal, be arranged at least one chip and fluorescent material in the described pedestal, wherein, described chip comprises substrate and luminous element, it is characterized in that: described chip is vertical bright dipping cake core, described substrate has a groove, and described luminous element is contained in the described groove and is fixed on the bottom surface of described groove, and the exiting surface of described luminous element and the inwall of described groove are enclosed a fluorescent material receiving space of accommodating described fluorescent material.
2. high-power white light-emitting diode as claimed in claim 1 is characterized in that: it is concordant with described substrate upper surface that described fluorescent material is filled the phosphor powder layer upper surface that forms behind the full described fluorescent material receiving space.
3. high-power white light-emitting diode as claimed in claim 1 or 2 is characterized in that: the width of described luminous element is suitable with the width of described groove, makes the inwall of luminous element sidewall and groove be close to.
4. high-power white light-emitting diode as claimed in claim 1 is characterized in that: the contact-making surface of described fluorescent material and groove inwall is parallel to described luminous element sidewall.
5. high-power white light-emitting diode as claimed in claim 1 is characterized in that: the contact-making surface of described fluorescent material and groove inwall and the inwall of described and groove are provided with certain angle of inclination.
6. as claim 4 or 5 described high-power white light-emitting diodes, it is characterized in that: described contact-making surface is provided with a reflector.
7. high-power white light-emitting diode chip, comprise substrate and luminous element, it is characterized in that: described chip is vertical bright dipping cake core, described substrate has a groove, described luminous element is contained in the described groove and is fixed on the bottom surface of described groove, and the exiting surface of described luminous element and the inwall of described groove are enclosed a fluorescent material receiving space of accommodating described fluorescent material.
8. high-power white light-emitting diode chip as claimed in claim 7 is characterized in that: it is concordant with described substrate upper surface that described fluorescent material is filled the phosphor powder layer upper surface that forms behind the full described fluorescent material receiving space.
9. high-power white light-emitting diode chip as claimed in claim 7 is characterized in that: the width of described luminous element is suitable with the width of described groove, makes the inwall of luminous element sidewall and groove be close to.
10. as each described high-power white light-emitting diode chip among the claim 7-9, it is characterized in that: the contact-making surface of described fluorescent material and groove inwall is parallel to the contact-making surface of described luminous element sidewall or described fluorescent material and groove inwall and the inwall of described and groove is provided with certain angle of inclination, and described contact-making surface is provided with a reflector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200720072582XU CN201069780Y (en) | 2007-07-18 | 2007-07-18 | High power white light LED and its chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200720072582XU CN201069780Y (en) | 2007-07-18 | 2007-07-18 | High power white light LED and its chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201069780Y true CN201069780Y (en) | 2008-06-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200720072582XU Expired - Fee Related CN201069780Y (en) | 2007-07-18 | 2007-07-18 | High power white light LED and its chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201069780Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299234A (en) * | 2011-06-13 | 2011-12-28 | 协鑫光电科技（张家港）有限公司 | Light emitting diode (LED) and manufacturing method thereof |
| CN105609619A (en) * | 2008-09-12 | 2016-05-25 | 晶元光电股份有限公司 | Semiconductor light emitting device and encapsulating structure thereof |
| CN106653769A (en) * | 2016-12-27 | 2017-05-10 | 江苏稳润光电科技有限公司 | White-light LED display and fabrication method thereof |
-
2007
- 2007-07-18 CN CNU200720072582XU patent/CN201069780Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609619A (en) * | 2008-09-12 | 2016-05-25 | 晶元光电股份有限公司 | Semiconductor light emitting device and encapsulating structure thereof |
| CN105609619B (en) * | 2008-09-12 | 2019-07-19 | 晶元光电股份有限公司 | Semiconductor light-emitting apparatus and its encapsulating structure |
| CN102299234A (en) * | 2011-06-13 | 2011-12-28 | 协鑫光电科技（张家港）有限公司 | Light emitting diode (LED) and manufacturing method thereof |
| CN106653769A (en) * | 2016-12-27 | 2017-05-10 | 江苏稳润光电科技有限公司 | White-light LED display and fabrication method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080604 Termination date: 20120718 |