CN201060874Y - 功率型氮化镓基发光二极管芯片 - Google Patents
功率型氮化镓基发光二极管芯片 Download PDFInfo
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- CN201060874Y CN201060874Y CNU2007200963137U CN200720096313U CN201060874Y CN 201060874 Y CN201060874 Y CN 201060874Y CN U2007200963137 U CNU2007200963137 U CN U2007200963137U CN 200720096313 U CN200720096313 U CN 200720096313U CN 201060874 Y CN201060874 Y CN 201060874Y
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- gallium nitride
- type gallium
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- nitride layer
- sapphire substrate
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Application Number | Priority Date | Filing Date | Title |
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CNU2007200963137U CN201060874Y (zh) | 2007-06-12 | 2007-06-12 | 功率型氮化镓基发光二极管芯片 |
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CNU2007200963137U CN201060874Y (zh) | 2007-06-12 | 2007-06-12 | 功率型氮化镓基发光二极管芯片 |
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CN201060874Y true CN201060874Y (zh) | 2008-05-14 |
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CNU2007200963137U Expired - Fee Related CN201060874Y (zh) | 2007-06-12 | 2007-06-12 | 功率型氮化镓基发光二极管芯片 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130248A (zh) * | 2010-10-08 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光装置及其制造方法 |
CN102130255A (zh) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光二极管、发光装置以及发光二极管的制造方法 |
CN102569577A (zh) * | 2010-12-27 | 2012-07-11 | 同方光电科技有限公司 | 一种提高发光效率的发光二极管及其制备方法 |
CN103022070A (zh) * | 2012-11-22 | 2013-04-03 | 华南理工大学 | 一种具有新型发光单元结构的大尺寸led芯片 |
CN103078050A (zh) * | 2013-02-01 | 2013-05-01 | 映瑞光电科技(上海)有限公司 | 一种倒装led芯片及其制造方法 |
CN103078022A (zh) * | 2013-01-18 | 2013-05-01 | 映瑞光电科技(上海)有限公司 | 一种led芯片及其制作方法 |
CN104969372A (zh) * | 2013-02-06 | 2015-10-07 | 夏普株式会社 | 发光装置以及发光装置的制造方法 |
CN110034216A (zh) * | 2018-01-12 | 2019-07-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii-v族氮化物深紫外发光二极管结构及其制作方法 |
CN110379899A (zh) * | 2019-08-26 | 2019-10-25 | 厦门乾照光电股份有限公司 | 一种led芯片及其制作方法 |
CN111312869A (zh) * | 2020-03-04 | 2020-06-19 | 深圳市炬诠科技有限公司 | 一种具有纳米二氧化钛层的led芯片及制备方法 |
-
2007
- 2007-06-12 CN CNU2007200963137U patent/CN201060874Y/zh not_active Expired - Fee Related
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130255A (zh) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光二极管、发光装置以及发光二极管的制造方法 |
CN102130248A (zh) * | 2010-10-08 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光装置及其制造方法 |
CN102569577A (zh) * | 2010-12-27 | 2012-07-11 | 同方光电科技有限公司 | 一种提高发光效率的发光二极管及其制备方法 |
CN103022070A (zh) * | 2012-11-22 | 2013-04-03 | 华南理工大学 | 一种具有新型发光单元结构的大尺寸led芯片 |
CN103022070B (zh) * | 2012-11-22 | 2016-01-20 | 华南理工大学 | 一种具有新型发光单元结构的大尺寸led芯片 |
WO2014110975A1 (zh) * | 2013-01-18 | 2014-07-24 | 映瑞光电科技(上海)有限公司 | 一种led芯片及其制作方法 |
CN103078022A (zh) * | 2013-01-18 | 2013-05-01 | 映瑞光电科技(上海)有限公司 | 一种led芯片及其制作方法 |
CN103078022B (zh) * | 2013-01-18 | 2016-03-23 | 映瑞光电科技(上海)有限公司 | 一种led芯片及其制作方法 |
CN103078050A (zh) * | 2013-02-01 | 2013-05-01 | 映瑞光电科技(上海)有限公司 | 一种倒装led芯片及其制造方法 |
US9419173B2 (en) | 2013-02-01 | 2016-08-16 | Enraytek Optoelectronics Co., Ltd. | Flip-chip LED and fabrication method thereof |
CN104969372A (zh) * | 2013-02-06 | 2015-10-07 | 夏普株式会社 | 发光装置以及发光装置的制造方法 |
CN104969372B (zh) * | 2013-02-06 | 2018-01-19 | 夏普株式会社 | 发光装置 |
CN110034216A (zh) * | 2018-01-12 | 2019-07-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii-v族氮化物深紫外发光二极管结构及其制作方法 |
CN110379899A (zh) * | 2019-08-26 | 2019-10-25 | 厦门乾照光电股份有限公司 | 一种led芯片及其制作方法 |
CN111312869A (zh) * | 2020-03-04 | 2020-06-19 | 深圳市炬诠科技有限公司 | 一种具有纳米二氧化钛层的led芯片及制备方法 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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Owner name: TANGSHAN CAOFEIDIAN GONGDA HIYU OPTOELECTRONICS TE Free format text: FORMER OWNER: TIANJIN POLYTECHNIC UNIVERSITY Effective date: 20101202 |
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Free format text: CORRECT: ADDRESS; FROM: 300160 TIANJIN POLYTECHNIC UNIVERSITY, NO.63, CHENGLIN ROAD, HEDONG DISTRICT, TIANJIN TO: 063210 B1-2, NEW AND HIGH TECHNOLOGY INDUSTRIAL PARK, INDUSTRIAL AREA, CAOFEIDIAN, TANGSHAN CITY, HEBEI PROVINCE |
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Effective date of registration: 20101202 Address after: 063210 hi tech Industrial Park, Caofeidian Industrial Zone, Hebei, Tangshan City B1-2 Patentee after: Tangshan Gongda hiyu optoelectric Polytron Technologies Inc Caofeidian Address before: 300160 Tianjin City Hedong District Forest Road No. 63, Tianjin University of Technology Patentee before: Tianjin Polytechnic University |
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Granted publication date: 20080514 Termination date: 20150612 |
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