CN201007728Y - Array type giant magnetic impedance effect current sensor - Google Patents
Array type giant magnetic impedance effect current sensor Download PDFInfo
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- CN201007728Y CN201007728Y CNU2007200933574U CN200720093357U CN201007728Y CN 201007728 Y CN201007728 Y CN 201007728Y CN U2007200933574 U CNU2007200933574 U CN U2007200933574U CN 200720093357 U CN200720093357 U CN 200720093357U CN 201007728 Y CN201007728 Y CN 201007728Y
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Abstract
The utility model belongs to the technical field of current measuring device, in particular relating to a non-contact type sensor which is based on Giant Magnetic Impedance (GMI) effect and which measures current through magnetic field change generated by current. The utility model is composed of current sensor probes of non-crystal matrix GMI style (1), (2), oscillating and commutating circuits (3), (4), a subsequent zero-setting amplifier (5) and a digital screen (6). The current sensor probes of non-crystal matrix GMI style (1), (2) are connected in series by means of welding a plurality of rectangular non-crystal belt units with good soft-magnetic feature (8) through copper wires (9). Further the two matrix probes meet an identical requirement and are positioned on two sides of an energizing wire (10) in parallel and bilateral symmetry manner. The design employing differential type structure of two probes is capable of signal amplification, increase of signal-to-noise ratio and improvement of linearity of curve of output. The utility model has the advantages of small and exquisite structure, high sensitivity, economy and utility and capability of wide application to current measuring in each field of production and scientific research.
Description
Technical Field
The utility model belongs to the technical field of current measurement device, in particular to array giant magneto-impedance (GMI) effect current sensor.
Background
Current measurement is an important problem in various fields of production and scientific research, and a plurality of new technologies and new materials are applied to current measurement devices. The most commonly used current sensors include current transducer type, rogowski coil, shunt resistor, and hall element current sensors, all of which have certain drawbacks. The converter type current sensor and the Rogowski coil are used for measuring current, the coil winding is required to be particularly accurate, the signal processing requirement is high, and the current sensor and the Rogowski coil can only be used for measuring alternating current; the shunt resistor can measure alternating current and direct current, but the shunt resistor is only a resistor and has large power consumption; the output signal of the Hall device has small change, and a certain magnetic field direction anisotropy exists when the current is measured, and the circuit of the sensor is too complex and has higher cost.
Until 1992, the giant magneto-impedance (GMI) effect was discovered in CoFeSiB soft magnetic amorphous wire by k.mohri et al, famous ancient houses university in japan, and the maturity of the existing amorphous material manufacturing process made it possible to design a magnetic sensor with stable performance, high sensitivity, fast response speed, non-contact and low cost.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an array type giant magneto-impedance effect current sensor based on giant magneto-impedance (GMI) effect design of amorphous soft magnetic strips, which can well solve the problems of one-to-one correspondence of giant magneto-impedance change rate and magnetic field generated by detected current, low noise and enlarged measuring range; and the utility model has simple structure, economy and practicality.
The principle of the giant magneto-impedance current sensor is that a high-frequency alternating current signal is loaded on an amorphous soft magnetic strip in a circuit, and corresponding high-frequency alternating current voltage signals are generated at two ends of the amorphous strip; when the external current to be measured generates a magnetic field to act on the amorphous strip, the alternating current impedance of the amorphous strip changes, the high-frequency voltage signals at the two corresponding ends also change, and the change of the external current to be measured can be reflected by the change of the high-frequency voltage signals.
The utility model discloses an array giant magneto-impedance effect current sensor, which consists of array GMI amorphous current sensor probes 1 and 2, oscillation and rectification circuits 3 and 4, a subsequent zeroing amplifier 5 and a digital display 6; the method is characterized in that:
(1) The array type current sensor probes 1 and 2 are formed by welding a plurality of rectangular amorphous strip units 8 with good soft magnetic characteristics in series through copper wires 9, and the requirements of the two array type probes 1 and 2 are the same,
which are symmetrically placed in parallel on both sides of the energizing wire 10;
(2) A permanent magnet 7 is arranged below the electrified lead 10, and provides a bias magnetic field to fix the working points of the array probes 1 and 2 on the curve of the GMI rate of the amorphous strip material changing with the magnetic field so as to adopt a differential structure, wherein the magnitude of the bias magnetic field is determined by the magnetic field intensity of the permanent magnet 7 and the distance from the permanent magnet 7 to the probes 1 and 2;
(3) The oscillation and rectification circuits 3 and 4 are composed of a Kolbe oscillation circuit 11, a pre-amplification circuit 12 and a rectification circuit 13The Biz oscillation circuit 11 provides high frequency AC signal for the probe, the input end of the pre-amplifier circuit 12 is connected with two ends of the amorphous band unit 8, the amplified signals at two ends of the amorphous band unit 8 are connected with the rectifier circuit 13 by the output end, the rectifier circuit 13 converts the high frequency AC signal generated by the amorphous band into DC signal U with twice AC signal peak value 1 、U 2 ，
(4) The above-mentioned direct current signal U 1 、 U2 And the current I to be measured is obtained by connecting with a zero setting output amplifier 5, carrying out operation zero setting and then sending to a digital display 6.
The Coriolis oscillator circuit 11 of the present invention is composed of a transistor having a cutoff frequency of 3 to 60MHz, a base and a DC power supply V cc The resistance values of the two divider resistors 16 and 17 between the base and the ground are equal; a crystal oscillator (crystal oscillator) 15 with the frequency of 1-20 MHz and an oscillation starting capacitor 14 are connected in series between the base and the ground; one end of the probe 1 is grounded, the other end of the probe is connected with an emitter of the transistor after being connected with the load resistor 21 in series, the probe 1 exists as a part of emitter load, and the oscillation frequency value of the Colez oscillation circuit 11 depends on the frequency of the crystal oscillator 15, namely the working frequency of the amorphous band of the probe 1; the frequency range of the crystal oscillator 15 is preferably 1 to 12MHz, and the most preferable frequency range is 2 to 5MHz, and a quartz crystal oscillator may be used.
The array type current sensor probes 1 and 2 are formed by welding 4-30 rectangular amorphous strip units 8 with good soft magnetic characteristics in series through copper wires 9, wherein the length of each amorphous strip unit is 5-25 mm, the width of each amorphous strip unit is 0.5-10 mm, the thickness of each amorphous strip unit is 10-40 um, and the distance between the two amorphous strip units is 0.5-10 mm; the requirements of the two array probes 1 and 2 are the same; the sensor adopts a differential structure, two array probes 1 and 2 are symmetrically arranged on two sides of an electrified lead 10, and the distances from the lead to the array sensor probes are 1-20 mm.
The amorphous strip unit 8 is not annealed, and a thin strip of a Co amorphous strip or a Fe-based nanocrystalline material having a maximum giant magneto-impedance change rate (GMI rate) of 50% or more is suitable for this patent. A permanent magnet 7 is used for providing a bias magnetic field, and the range of the bias magnetic field is 10-30 Oe;
as a further preferred form of the present patent, the optimum frequency of the crystal oscillator 15 is 3.5795MHz; the amorphous strip unit 8 is a CoFeSiB amorphous strip with a large giant magneto-impedance change rate (GMI rate), the length of the amorphous strip unit is 10mm, the width of the amorphous strip unit is 2.5mm, the thickness of the amorphous strip unit is 30um, the distance between the two amorphous strip units is 1mm, and the distance between a lead and a probe of the array sensor is 5mm. Ferrite or rubidium, iron and boron permanent magnets 7 are used for providing a bias magnetic field, and the bias field range is 10-20 Oe.
The amorphous strip unit 8 used in the patent is a CoFeSiB amorphous strip, is prepared by adopting a single-roller rapid quenching method, and is firstly melted into an alloy block in a vacuum arc furnace by using Co, fe, si and B with the purity of more than 99.9 percent according to a certain proportion (the proportion of Co is more than 60 percent, the proportion of B is 8-20 percent, and the balance is Si and Fe); breaking the alloy blocks, and putting the broken blocks into a quartz tube; in a melt spinning machine (WK MS-I), the distance between a quartz tube opening and a copper roller is about 2mm, and the rotating speed of the copper roller is 25m/s; argon gas is added into the quartz tube, the molten alloy is sprayed onto a copper roller, and the molten alloy is thrown into a thin strip.
In the above technical solution, when a current passes through the wire 10, a toroidal magnetic field H is generated i ；
Wherein, I is the current to be measured in the wire. Because of the toroidal magnetic field H generated by the current i The radially acting fields at each amorphous strip element 8 of the probe are different, but the output voltage signal of the probe reflects the GMI effect averaged by the amorphous strip elements 8.
Providing a bias field H by a permanent magnet 7 b For fixing the working points of the array probes 1 and 2 on the GMI rate variation curve with the magnetic field so as to adopt a differential structure (as shown in FIG. 2 (b)), a bias field H b Can be changed by adjusting the distance of the permanent magnet 7 from the probes 1 and 2; due to bias field H b So that the probes 1 and 2 induce a magnetic field H in the current i In time, it is equivalent to a probe1 is reduced to H b -H i While the equivalent magnetic field of the probe 2 is increased to H b +H i . The differential structure has the advantages of nearly twice signal amplification, signal-to-noise ratio improvement and output curve linearity improvement; moreover, the biggest advantage of the sensor structure is that the sensor and the measured circuit can not affect each other when working, so the utility model discloses a non-contact measurement of the current in each field of production and research provides a reliable method.
Identical oscillating and rectifying circuits 3, 4 provide sinusoidal alternating current signals to the probes 1, 2, respectively. Taking any one of the oscillation and rectification circuits 3 as an example (as shown in fig. 3), it is composed of a cobz oscillation circuit 11, a preamplifier circuit 12 and a rectification circuit 13; the input end of the preamplifier 12 is connected with both ends of the amorphous ribbon probe 1, the signal amplified by the preamplifier 12 is connected with the rectifying circuit 13 by the output end, the rectifying circuit 13 converts the high-frequency alternating current signal into a direct current signal with double alternating current signal peak value, and the direct current signal is output U 1 、U 2 (ii) a The whole sensor probe 1, 2 and the oscillation and rectification circuit 3, 4 are wrapped by a non-ferromagnetic metal shell or a resin outer sleeve. Then, the differential output voltage signal U = U of the two oscillation and rectification circuits 3, 4 is used 2 -U 1 After being processed by the zero setting amplifying circuit 5, the current measuring circuit is connected with a digital display 6 (as shown in figure 6) to achieve the function of directly displaying the current measuring data.
Because the utility model adopts the Co-based amorphous ribbon with larger GMI rate, the size of the bias magnetic field can be set by adjusting the distance between the permanent magnet body 7 and the two probes 1 and 2, namely the working point of the probes on the GMI rate changing curve along with the magnetic field; the design adopts a double-probe differential structure, so that signals can be amplified, the signal-to-noise ratio is improved, and the linearity of an output curve is improved; the sensor is non-contact current measurement, and the measurement range of the sensor is 0-10A. The utility model discloses electronic circuit is simple, novel structure is small and exquisite, economical convenient and practical, but wide application in each field current measurement of production scientific research.
Drawings
FIG. 1: structure diagram of array giant magneto-impedance (GMI) effect current measuring sensor;
fig. 2 (a): the utility model discloses a schematic diagram of an array probe structure;
fig. 2 (b): setting a structure diagram of a bias field and a probe;
FIG. 3: the utility model is a schematic diagram of any group of probes and an oscillation and rectification circuit;
FIG. 4: the GMI rate of the CoFeSiB amorphous band changes with the magnetic field;
FIG. 5 is a schematic view of: the output waveform schematic diagram of the oscillation and rectification circuit;
FIG. 6: the output change curve of the signal U along with the current under different bias magnetic fields;
FIG. 7: the utility model discloses a zero setting amplifier and digital display sketch map.
As shown in fig. 1, 1 and 2 are the same array type current sensor probe; 3. 4 are the same oscillating and rectifying circuits; 5 is a zero setting amplifying circuit; 6 is a digital display device; 7 is a permanent magnet; 10 is a copper wire of the current to be measured;
as shown in fig. 2, the array current sensor probes 1 and 2 are formed by connecting amorphous strip units 8 in series, wherein 9 is a copper wire; the permanent magnet 7 is arranged below the lead, and the probes 1 and 2 are arranged on the left side and the right side of the lead 10;
as shown in fig. 3, the oscillation and rectification circuits 3 and 4 are both composed of the same colpitts oscillation circuit 11, preamplifier circuit 12 and rectification circuit 13;
as shown in fig. 7, the zero-setting amplifying circuit 5 and the digital display device 6;
Detailed Description
Example 1:
in fig. 2, 1 and 2 are array current sensor probes, 7 is a permanent magnet (such as ferrite, rubidium, iron, boron, etc.), and a block (rectangular parallelepiped) ferrite is used in the specific example. 8 is an amorphous strip unit, 9 is a copper wire, and 10 is a copper wire which is provided with current to be measured.
Array current sensor probe 1, 2 are respectively by 16 rectangle amorphous belt units 8 that have good soft magnetic characteristic by copper line 9 series welding, amorphous belt unit 8 is long 10mm, wide 2.5mm, thick 30um, the distance 1mm of two amorphous belt units, and two array probe 1, 2 require the same. Two array probes 1, 2 are symmetrically placed on both sides of an energized conductor 10, and when current passes through the conductor 10, a toroidal magnetic field H is generated around the conductor i . The output voltage signals of the probes 1, 2 reflect the GMI effect averaged over the amorphous ribbon unit 8.
The amorphous strip unit 8 is a CoFeSiB amorphous strip (Co) 68 Fe 4 Si 12 B 16 In an embodiment, a specific substance name must be shown! ) At the working frequency of 3.5792MHz, the maximum giant magneto-impedance change rate can reach 210% (see FIG. 4). In addition, the permanent magnet 7 provides a bias magnetic field H b The device is used for fixing the working points of the array probes 1 and 2 on the GMI rate change with magnetic field change curves so as to adopt a differential structure, and referring to fig. 2 (b) and fig. 4, the ordinate mir in fig. 4 is the GMI rate, and the specific expression is as follows:
wherein Z (H) is an AC impedance value of the amorphous ribbon unit 8 under an arbitrary magnetic field, and Z (H) sat ) The ac impedance value of the amorphous ribbon unit 8 after magnetization to saturation. Wherein the bias field H b Can be varied by adjusting the distance of the permanent magnet 7 from the probe 1, 2, due to the bias field H b So that the probe 1 induces a magnetic field H generated by the current i When it is equivalent to an equivalent magnetic field of H 1 ＝H b -H i And the equivalent magnetic field of the probe 2 is H 2 ＝H b +H i So that H can be substituted i The double GMI effect caused is shown, so that the output signal of the probe is amplified, and the linearity of an output curve is also improved;because the differential structure probes 1 and 2 are completely the same, the interference of factors such as temperature drift and the like can be eliminated, and the signal to noise ratio is improved.
Example 2:
in fig. 3, 1 is an array type current sensor probe, 11 is a Colpitts (Colpitts) oscillation circuit, 12 is a preamplifier circuit, and 13 is a rectifier circuit. 14 is a starting oscillation capacitor C 3 15 is a crystal oscillator, 16, 17 are two divider resistors with equal resistance, 18 is a feedback capacitor C 1 And 19 is a feedback capacitor C 2 The reference numeral 20 denotes a transistor, 21 denotes an emitter current limiting resistor, 22 denotes a high-frequency operational amplifier, 23 and 34 denote two rectifier diodes, 25 denotes a voltage stabilizing capacitor, and 26 denotes a filter capacitor.
The power supply voltage Vcc of the Coriolis oscillator circuit 11 can be 12V, the design of stabilizing the static working point of the base electrode of the transistor 20 is adopted, and because the resistance values of the two divider resistors 16 and 17 are equal, the static working voltage of the base electrode of the transistor 20 is 6V, and the static working voltage of the emitter electrode of the transistor 20 is stabilized at about 5.3V; the array probe 1 adopts CoFeSiB (Co) 68 Fe 4 Si 12 B 16 ) An amorphous material as a part of the emitter load and an emitter current limiting resistor 21 are connected into a circuit, and the emitter current limiting resistor 18 is 390 Ω; the Kolbe oscillation circuit 11 is used for frequency stabilization oscillation, and the oscillation frequency is 3.5795MHz of the crystal oscillator 15; the feedback capacitor 18 and the feedback capacitor 19 are adjusted to enable the emitter to output a stable sinusoidal signal, and the array probe 1 generates a certain alternating voltage signal at two ends due to the large alternating impedance.
When no external current generates a magnetic field to act on the array probe 1, the ac impedance value of the array probe 1 does not change, the ac voltage signal thereon is a stable sinusoidal signal output by the emitter of the transistor 20 in the colpitts oscillation circuit 11, the ac voltage signal is amplified by the pre-amplification circuit 12 formed by the high-frequency operational amplifier 22, and the amplified ac signal U is obtained p1 (corresponding to the solid line waveform parts in the diagrams a and c of FIG. 5)Connected to a rectifying circuit 13 consisting essentially of two rectifying diodes 23, 24 for supplying a high-frequency alternating current signal U p1 Converted into double crossStream signal U p1 Peak dc signal U 1 。
The structure and the working principle of the array type probe 2 and the oscillating and rectifying circuit 4 on the other side of the differential structure are the same as those described above. When no external current generates a magnetic field to act on the array probe 2, the alternating current impedance value of the array probe 2 does not change, the alternating current voltage signal on the alternating current impedance value is a stable sinusoidal signal output by the emitter of the transistor 20 in the Colez oscillating circuit 11, and the amplitude of the alternating current voltage signal is amplified by an amplifier to be U p2 (corresponding to the solid line waveform parts in the graphs c and d in FIG. 5), and then the rectified output signal is U 2 Wherein U is 2 Is an alternating current signal U p2 Twice the peak value. Specifically, see fig. 5, wherein the solid line waveforms in (a) and (c) are waveforms U of the ac signals on the probes 1 and 2 amplified by the amplifier p1 And U p2 And the solid line waveforms of the diagrams (b) and (d) are the rectified output U 1 And U 2 。
According to the working principle of the probe described in this patent, (see fig. 2 (b) and fig. 4) due to the bias field H b When the magnetic field generated by the current to be measured acts on the probes 1 and 2, the alternating voltage signals on the probes 1 and 2 become larger and smaller respectively with the impedance values of the probes, so that the alternating voltage signals at the two ends of the probes 1 and 2 are increased and decreased, and correspondingly, the waveform U after amplification is obtained p1 、U p2 And a rectified output U 1 、U 2 And also varies, as shown by the waveforms shown by the dashed lines in the figures of fig. 5.
As shown in FIG. 6, the signal U is under different bias magnetic fields H in the measuring range of 0-5A current flowing in the wire b The output variation curve with current, bias magnetic field H, through experiment and considering the sensor size (distance from the permanent magnet 7 to the probes 1 and 2) b The optimum working range of (2) is 10 to 20Oe.
As shown in the respective diagrams of fig. 6, when the permanent magnet 7 generates the bias field H b After setting, we can obtain a linear relationship between the current I to be measured in the wire 10 and the measured U value:
U＝KI+U b (3)
wherein, K (V/a) is a proportionality constant of the current I to be measured and the measured U value, i.e., the slope of the straight line in fig. 5, which is a negative value; u shape b Is the initial value of U when the current I to be measured is 0.
Example 3:
one embodiment of the data for each portion of the circuit element is presented.
In fig. 3, the transistor 20 is a high-frequency transistor of type 2SC1815, with a cut-off frequency f T The frequency is 5 times larger than the crystal oscillator 15. The crystal oscillator 15 has a frequency of 1MHz or more and the oscillation start capacitor 14 can start oscillation at 15pF to 10 nF. The two voltage dividing resistors 16 and 17 can be 10k omega; the emitter current limiting resistor 21 is 390 Ω; feedback capacitor 18 is 1000 pF-2200 pF, feedback capacitor 19 is 60 pF-200 pF, and the ratio of feedback capacitor 18 to feedback capacitor 19 is between 2 and 25. The oscillation frequency of the cobz oscillation circuit is the frequency of the crystal oscillator 15.
The pre-amplifier circuit 12 in fig. 3 should select a high-frequency operational amplifier with a gain bandwidth product GBP 5 times or more of the frequency of the crystal oscillator 15 and an offset voltage below 4 mV. LM318 may be selected for high frequency operational amplifier 22
In the rectifier circuit 3 in fig. 3, schottky diodes are used as the rectifier diodes 23 and 24.
Example 4:
in fig. 7, 6 is a digital display, and 27 and 28 are amplifiers with low offset voltage. 27 configured to amplify the signal U = U 2 -U 1 Isolated from the lower circuit to eliminate mutual interference; an inverse proportional nulling output amplifier formed by operational amplifier 28; these two parts constitute the subsequent nulling amplifier 5, the output of which is U o 。
The signal U passes through a subsequent zero setting amplifying circuit 5 and then is output with a final output voltage U o The relationship of (1) is:
U o ＝A(U-U f ) (4)
where A is the amplification of the inverse proportional circuit formed by operational amplifier 28Multiple, which is a negative value; u shape f Is a reference voltage. The linear relationship (3) between the current I to be measured in the wire 10 and the measured U value obtained in the embodiment 2 is substituted into the equation (4) to obtain the final output voltage U o Relation to current to be measured:
U o ＝AKI+A(U b -U f ) (5)
regulating reference voltage U after stabilization under the condition of no current to be measured f So that U is f And U b Equal, the final output voltage U of the output amplifier 28 is zeroed o 0 in the absence of current. Reference voltage U f The regulation of (2) can be realized by voltage division by a potentiometer on a standard power supply (5V). The amplification A of the inverse proportional circuit formed by the operational amplifier 28 is then adjusted so that the value of AK (V/A) is equal to 1, and the resulting output voltage U is then obtained o The relation between the current to be measured and the current to be measured is as follows:
U o ＝I (6)
final output voltage U o Then connected to the digital display 6, the U displayed by the digital display 6 o The voltage value is equal to the current value to be measured, so that the sensor can directly achieve the function of current measurement.
In FIG. 7, op-07 is selected for the low offset voltage amplifiers 27, 28;
in fig. 7, the digital display 6 may use a ZF5135 digital panel table.
Claims (8)
1. The array type giant magneto-impedance effect current sensor consists of array type amorphous current sensor probes (1) and (2), an oscillation and rectification circuit (3) and (4), a subsequent zero setting amplifier (5) and a digital display (6); the method is characterized in that:
(1) The array type current sensor probes (1) and (2) are formed by welding a plurality of rectangular amorphous strip units (8) with good soft magnetic characteristics in series through copper wires (9), and the two array type probes (1) and (2) have the same requirement and are symmetrically arranged on two sides of an electrified lead (10) in parallel;
(2) A permanent magnet (7) is arranged below the electrified lead (10), and a bias magnetic field is provided to fix working points of the array probes (1) and (2) on the curve of GMI rate of the amorphous strip material changing along with the magnetic field so as to adopt a differential structure, wherein the magnitude of the bias magnetic field is determined by the magnetic field strength of the permanent magnet (7) and the distance from the permanent magnet (7) to the probes (1) and (2);
(3) The oscillation and rectification circuits (3) and (4) are respectively composed of a Kolbe oscillation circuit (11), a pre-amplification circuit (12) and a rectification circuit (13), the Kolbe oscillation circuit (11) provides high-frequency alternating current signals for the probe, the input end of the pre-amplification circuit (12) is connected with two ends of the amorphous band unit (8), the signals of the two ends of the amorphous band unit (8) amplified by the pre-amplification circuit are connected with the rectification circuit (13) through the output end, and the rectification circuit (13) converts the high-frequency alternating current signals generated by the amorphous band into direct current signals U with double alternating current signal peak values 1 、U 2 ；
(4) The above-mentioned direct current signal U 1 、U 2 And the zero setting output amplifier (5) is connected, and the current I to be measured is measured after operation zero setting and then sent to the digital display (6).
2. The array giant magneto-impedance effect current sensor as claimed in claim 1, wherein: the Colpitts oscillation circuit (11) is composed of a transistor (20) with a cut-off frequency of 3-60 MHz, and its base is connected with a DC power supply V cc The resistance values of two divider resistors (16) and (17) between the base and the ground are equal; a crystal oscillator (15) with the frequency of 1-20 MHz and an oscillation starting capacitor (14) are connected in series between the base and the ground; one end of the probe (1) is grounded, the other end of the probe is connected with an emitter of the transistor after being connected with the load resistor (21) in series, and the probe (1) exists as a part of emitter load.
3. The array giant magneto-impedance effect current sensor as claimed in claim 1, wherein: the array type current sensor probes (1) and (2) are formed by welding 4-30 rectangular amorphous strip units (8) with good soft magnetic characteristics in series through copper wires (9), wherein the length of each amorphous strip unit is 5-25 mm, the width of each amorphous strip unit is 0.5-10 mm, the thickness of each amorphous strip unit is 10-40 um, and the distance between the two amorphous strip units is 0.5-10 mm; two arrayed probes (1),
(2) The two ends of the electrified conducting wire (10) are symmetrically arranged, and the distances from the conducting wire to the array type sensor probe are 1-20 mm.
4. The array giant magneto-impedance effect current sensor of claim 1, wherein: the amorphous strip unit (8) adopts a Co amorphous strip or a thin strip of Fe-based nanocrystalline material with the giant magneto-impedance change rate of more than 30% -50%.
5. The array giant magneto-impedance effect current sensor as claimed in claim 4, wherein: the amorphous strip unit (8) is a CoFeSiB amorphous material.
6. The array giant magneto-impedance effect current sensor as claimed in claim 1, wherein: using ferrite or rubidium-iron-boron permanent magnets (7) to provide a bias field H b The bias field is in the range of 10-30 Oe.
7. The array giant magneto-impedance effect current sensor as claimed in claim 6, wherein: bias magnetic field H b The working range of (2) is 10 to 20Oe.
8. The array giant magneto-impedance effect current sensor as claimed in claim 1, wherein: the frequency range of the crystal oscillator (15) is 2-5 MHz.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101038305B (en) * | 2007-03-06 | 2010-05-19 | 吉林大学 | Array giant magnetic impedance effects current sensor |
| CN102169133A (en) * | 2011-04-22 | 2011-08-31 | 江苏多维科技有限公司 | Current measurement device |
| CN101699309B (en) * | 2009-10-13 | 2011-11-09 | 清华大学 | Giant magneto-impedance effect sensing probe based on flexible circuit board |
| CN108072780A (en) * | 2016-11-11 | 2018-05-25 | 弗兰克公司 | Non-contact electric current measurement system |
| CN108152765A (en) * | 2016-11-30 | 2018-06-12 | 矢崎总业株式会社 | Magnetic Field Detection Sensor |
| CN109425775A (en) * | 2017-08-25 | 2019-03-05 | 南京理工大学 | A kind of hand-held current sensor using magnetic electric compound material |
| JP2020510214A (en) * | 2017-03-16 | 2020-04-02 | レム・インテレクチュアル・プロパティ・エスエイＬｅｍ Ｉｎｔｅｌｌｅｃｔｕａｌ Ｐｒｏｐｅｒｔｙ Ｓａ | Current converter with magnetic field gradient sensor |
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| CN101038305B (en) * | 2007-03-06 | 2010-05-19 | 吉林大学 | Array giant magnetic impedance effects current sensor |
| CN101699309B (en) * | 2009-10-13 | 2011-11-09 | 清华大学 | Giant magneto-impedance effect sensing probe based on flexible circuit board |
| CN102169133A (en) * | 2011-04-22 | 2011-08-31 | 江苏多维科技有限公司 | Current measurement device |
| CN108072780A (en) * | 2016-11-11 | 2018-05-25 | 弗兰克公司 | Non-contact electric current measurement system |
| CN108072780B (en) * | 2016-11-11 | 2022-03-11 | 弗兰克公司 | Non-contact current measuring system |
| CN108152765A (en) * | 2016-11-30 | 2018-06-12 | 矢崎总业株式会社 | Magnetic Field Detection Sensor |
| JP2020510214A (en) * | 2017-03-16 | 2020-04-02 | レム・インテレクチュアル・プロパティ・エスエイＬｅｍ Ｉｎｔｅｌｌｅｃｔｕａｌ Ｐｒｏｐｅｒｔｙ Ｓａ | Current converter with magnetic field gradient sensor |
| JP7039609B2 (en) | 2017-03-16 | 2022-03-22 | レム・インターナショナル・エスエイ | Current transducer with magnetic field gradient sensor |
| JP2022084728A (en) * | 2017-03-16 | 2022-06-07 | レム・インターナショナル・エスエイ | Current converter with magnetic field gradient sensor |
| JP7367100B2 (en) | 2017-03-16 | 2023-10-23 | レム・インターナショナル・エスエイ | Current transducer with magnetic field gradient sensor |
| CN109425775A (en) * | 2017-08-25 | 2019-03-05 | 南京理工大学 | A kind of hand-held current sensor using magnetic electric compound material |
| CN109425775B (en) * | 2017-08-25 | 2021-01-26 | 南京理工大学 | Handheld current sensor adopting magnetoelectric composite material |
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