CN200972861Y - Low voltage transient curb diode chip - Google Patents
Low voltage transient curb diode chip Download PDFInfo
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- CN200972861Y CN200972861Y CN 200620140021 CN200620140021U CN200972861Y CN 200972861 Y CN200972861 Y CN 200972861Y CN 200620140021 CN200620140021 CN 200620140021 CN 200620140021 U CN200620140021 U CN 200620140021U CN 200972861 Y CN200972861 Y CN 200972861Y
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Abstract
The utility model discloses a chip for a low-voltage transient voltage suppressor. The chip comprises a chip body, a glass protective layer and a PN knot. The edge of the PN knot near the glass protective layer extends downwards. The utility model has the advantages of a low breakthrough field intensity at the edge, and great reduction in the leakage current.
Description
Technical field
The utility model relates to a kind of diode chip for backlight unit, and is especially relevant with transient voltage inhibition diode (TVS) chip.
Background technology
In circuit, transient voltage suppresses power supply, load, the data wire two ends that diode (TVS) is parallel to the loop.Generally speaking, work in holding state, its operating voltage VR is not more than 85% of puncture voltage VB.When (for example thunder and lightning) and when the very big narrow potential pulse of amplitude and pulse amplitude occurring and surpassing transient voltage and suppress the puncture voltage of diode (TVS), transient voltage suppresses diode (TVS) and enters the breakdown region for a certain reason in the circuit.The characteristic of utilizing the voltage in the I-V curve of its breakdown region not change with electric current substantially is clamped at below 1.4 times the puncture voltage voltage of circuit.Come the important devices in the protective circuit unaffected with this.
When transient voltage suppresses diode (TVS) when working in holding state, in order to reduce power consumption, we wish that its leakage current IR is as best one can little.Usually suppress diode (TVS) to transient voltage and apply reverse voltage VR, and under this voltage, test reverse leakage current IR.
Reverse leakage current depend on basically diode breakdown mode, leakage current under the avalanche breakdown mode of puncture voltage＞10V＜1 microampere; Along with it reduce, breakdown mode progressively changes Zener breakdown into by avalanche breakdown when puncture voltage＜10V.Concerning general glassivation technology, reverse leakage current finally can increase several magnitude.Its power consumption also can increase several magnitude under identical operating voltage, and this power consumption can increase the local temperature rise of device, can seriously influence the stability of device work and the life-span of device.And can cause the circuit working instability.
Under the Zener breakdown pattern, reverse leakage current IR is still by constituting with surperficial two parts electric current in the body.And tracking current has accounted for sizable ratio.Therefore we still can reduce whole reverse leakage current by the method that reduces tracking current.
Summary of the invention
The disruptive field intensity that the purpose of this utility model provides a kind of edge is little, can reduce the low-voltage transient voltage suppression diode chip of leakage current significantly.
For achieving the above object, the utility model is achieved through the following technical solutions.Low-voltage transient voltage suppression diode chip comprises chip body, and glassivation and PN junction extend downwards in the marginal portion of the other PN junction of glassivation.
Described low-voltage transient voltage suppression diode chip, the vertical depth h that extends downwards in the marginal portion of the other PN junction of glassivation are 1.5～2 times of the regional depth h ' of chip center.
Described low-voltage transient voltage suppression diode chip extends to extension downwards of near linear formula or curvilinear style downwards and extends downwards in the marginal portion of the other PN junction of glassivation.
The utility model compared with prior art has the following advantages: (one) is that the junction depth by the zones of different of controlling same chip makes these zones have different disruptive field intensities at work, edge region is extended to increase its degree of depth PN junction downwards as far as possible, the disruptive field intensity minimum at edge in this case, therefore leakage current descends significantly, and be a plane substantially at other regional PN junction, the planar section of PN has determined to satisfy the puncture voltage that chip requires; (2) puncture voltage that is this patent by increasing the surface or reduce surface electric field intensity and reduce tracking current but do not change common glassivation technology, the leakage current of the low pressure TVS diode of making of this method hangs down an order of magnitude than the leakage current of the TVS diode of making of normal process.
Description of drawings
Fig. 1 is the structural representation of the utility model low-voltage transient voltage suppression diode chip.
Embodiment
Below in conjunction with accompanying drawing embodiment of the present utility model is described in further detail.
As shown in Figure 1; low-voltage transient voltage suppression diode chip; comprise chip body 1; glassivation 2 and PN junction 3; extend downwards the marginal portion 4 of the PN junction by glassivation 2; the downward vertical depth h that extends is 1.8 times of the regional depth h ' of chip center, extends to extension downwards of near linear formula or curvilinear style downwards and extends downwards.
Claims (3)
1, a kind of low-voltage transient voltage suppression diode chip comprises chip body (1), and glassivation (2) and PN junction (3) is characterized in that: extend downwards the marginal portion (4) at the other PN junction of glassivation (2).
2, low-voltage transient voltage suppression diode chip according to claim 1 is characterized in that: the vertical depth h that extends downwards in the marginal portion (4) of the other PN junction of glassivation (2) is 1.5～2 times of the regional depth h ' of chip center.
3, low-voltage transient voltage suppression diode chip according to claim 1 and 2 is characterized in that: extend to extension downwards of near linear formula or curvilinear style in the marginal portion (4) of the other PN junction of glassivation (2) downwards and extend downwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620140021 CN200972861Y (en) | 2006-11-20 | 2006-11-20 | Low voltage transient curb diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620140021 CN200972861Y (en) | 2006-11-20 | 2006-11-20 | Low voltage transient curb diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN200972861Y true CN200972861Y (en) | 2007-11-07 |
Family
ID=38884115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620140021 Expired - Fee Related CN200972861Y (en) | 2006-11-20 | 2006-11-20 | Low voltage transient curb diode chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN200972861Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621002A (en) * | 2009-08-05 | 2010-01-06 | 百圳君耀电子（深圳）有限公司 | Manufacturing method of low-voltage transient voltage suppression diode chip |
| CN102244045A (en) * | 2010-05-11 | 2011-11-16 | 扬州杰利半导体有限公司 | Diode chip and processing technology thereof |
| CN103515448A (en) * | 2012-06-22 | 2014-01-15 | 英飞凌科技股份有限公司 | Electrical device and method for manufacturing same |
| CN103972231A (en) * | 2014-04-18 | 2014-08-06 | 苏州固锝电子股份有限公司 | Two-way transient voltage suppression device with low power consumption |
| CN104009096A (en) * | 2014-06-09 | 2014-08-27 | 苏州市职业大学 | Rectifier diode device |
| CN103972231B (en) * | 2014-04-18 | 2016-11-30 | 苏州固锝电子股份有限公司 | The semiconductor device of low-power consumption |
-
2006
- 2006-11-20 CN CN 200620140021 patent/CN200972861Y/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621002A (en) * | 2009-08-05 | 2010-01-06 | 百圳君耀电子（深圳）有限公司 | Manufacturing method of low-voltage transient voltage suppression diode chip |
| CN101621002B (en) * | 2009-08-05 | 2014-04-16 | 广东百圳君耀电子有限公司 | Manufacturing method of low-voltage transient voltage suppression diode chip |
| CN102244045A (en) * | 2010-05-11 | 2011-11-16 | 扬州杰利半导体有限公司 | Diode chip and processing technology thereof |
| CN102244045B (en) * | 2010-05-11 | 2013-07-03 | 扬州杰利半导体有限公司 | Diode chip and processing technology thereof |
| CN103515448A (en) * | 2012-06-22 | 2014-01-15 | 英飞凌科技股份有限公司 | Electrical device and method for manufacturing same |
| US9379257B2 (en) | 2012-06-22 | 2016-06-28 | Infineon Technologies Ag | Electrical device and method for manufacturing same |
| US9741816B2 (en) | 2012-06-22 | 2017-08-22 | Infineon Technologies Ag | Electrical device and method for manufacturing same |
| CN103515448B (en) * | 2012-06-22 | 2017-09-08 | 英飞凌科技股份有限公司 | Electronic device and its manufacture method |
| CN103972231A (en) * | 2014-04-18 | 2014-08-06 | 苏州固锝电子股份有限公司 | Two-way transient voltage suppression device with low power consumption |
| CN103972231B (en) * | 2014-04-18 | 2016-11-30 | 苏州固锝电子股份有限公司 | The semiconductor device of low-power consumption |
| CN104009096A (en) * | 2014-06-09 | 2014-08-27 | 苏州市职业大学 | Rectifier diode device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |