CN200943101Y - Batch preparation of double-faced high-temperature superconducting film device - Google Patents
Batch preparation of double-faced high-temperature superconducting film device Download PDFInfo
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- CN200943101Y CN200943101Y CN 200620119334 CN200620119334U CN200943101Y CN 200943101 Y CN200943101 Y CN 200943101Y CN 200620119334 CN200620119334 CN 200620119334 CN 200620119334 U CN200620119334 U CN 200620119334U CN 200943101 Y CN200943101 Y CN 200943101Y
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Abstract
The utility model provides a batch-production double-side high-temperature superconductive film device, which is characterized in that a plurality of base is evenly arrayed on the round-plate sample table and is rotated by the main rotation shaft; rotating heating is conducted in the heating vacuum cavity; and the large-area double-side high-temperature superconductive film is manufactured by one-time splashing. The upper and the lower surfaces of the heating vacuum cavity is symmetrically provided with the splashing holes and the upper and lower splashing targets are arrayed symmetrically. The upper and lower surfaces of the vacuum cavity are also symmetrically provided with the metal electrode target material. The heating cavity and the accessory rotation shaft are connected. The position of the splashing hole can be rotated to the splashing position of the metal target material so as to realize the electrode film coating at the original place. The main rotation shaft is driven by the stepless speed change electrode and can control the rotation velocity. The outer wall of the heating cavity and the surrounding area of the splashing target are provided with air inlet so as to ensure even air pressure in the splashing area and the cavity in time of annealing. The device is capable of making 16 sheets of high-performance double-side high-temperature superconductive films of 2 inches in diameter and 12 sheets of high-performance double-side high-temperature superconductive films of 3 inches in diameter, and the size of the sample can be enlarged and the quantity can be increased according to needs.
Description
Technical field:
The utility model relates to the superconducting thin film preparing technical field, is the device that a kind of mass prepares the large area two-side high-temperature superconducting thin film, particularly utilizes the dc magnetron sputtering method mass to prepare the device of large area two-side high-temperature superconducting thin film.
Technical background
The large area two-side high-temperature superconducting thin film is the critical material in the superconducting electronics device.At present the technology that adopts mainly is to utilize the method for physical vapor deposition (as d.c. sputtering, pulsed laser deposition or coevaporation), at big area (8 inches of 2 inches-φ of φ) oxide monocrystal substrate (as LaAlO
3, MgO, sapphire) go up, preparation yttrium barium copper oxide YBa under 600-900 ℃ high temperature
2Cu
3O
7-δHigh-temperature superconductor thin-film material such as (YBCO).For guarantee two-side film membrane performance and structure-causing property, the two-side film membrane preparation is carried out simultaneously usually.
It is the key factor that reduces the film cost that mass prepares the large area two-side high-temperature superconducting thin film.In present several method for preparing the large area two-side high-temperature superconducting thin film, can't once prepare film more than 2 with direct current (magnetic control) sputter and pulsed laser deposition (PLD) method; Utilize the method for coevaporation, once can prepare 3 inches superconducting thin films of 12 above φ.Method with direct current or magnetically controlled DC sputtering prepares the large area two-side superconducting thin film, and at present the technology that adopts mainly contains: single target (planar target or hollow cylinder target) face preparation in twice minute, the rotation of single target substrate add hot preparation, to the disposable monolithic preparation of target and to target reciprocating preparation etc.In above-mentioned several technology, adopt single target, substrate rotation preparation, can only once prepare the monolithic double sided superconducting film; Employing is example to a sputter of target preparation with the reciprocating, can only once prepare 2 at present.Therefore to prepare the mass level in urgent need to be improved for the large area two-side high-temperature superconducting thin film, to reduce production costs, adapts to the requirement of the marketization.
Summary of the invention
The purpose of this utility model provides a kind of batch preparation of double-faced high-temperature superconducting film device, it adopts disk rotary type heating unit, target is prepared the large area two-side high-temperature superconducting thin film simultaneously, compare with the method that prepared the large area two-side high-temperature superconducting thin film in the past, have following tangible improvement and raising;
At first, can prepare the large area two-side high-temperature superconducting thin film by disposable mass.Difference according to sizes of substrate, by enlarging the heating unit size, strengthen the target size and adjusting substrate fixture size etc., can one time the large area two-side high-temperature superconducting thin film of 2 inches of 16 above φ of mass preparation, the mass ability was compared with former technology and is significantly improved.Simultaneously because adopt many targets, to the mode of target sputter, the increase that rate of film build can be at double.Under the same terms, evenly rotate preparation, can guarantee the homogeneity and the consistence of film performance.Rotate heating cavity with auxilliary transmission shaft, can disposable in-situ preparing gold electrode protective layer, the associativity of electrode and film is good, generating electrodes obscission not when assurance device etching prepares.
For achieving the above object, the utility model is taked following design:
A kind of batch preparation of double-faced high-temperature superconducting film device is characterized in that, it includes:
A vacuum cavity, cylindrical, in the top cover of this vacuum cavity and on the base plate, symmetry arrangement large size plane or hollow cylinder shape high temperature superconducting materia target, and the metal targets that is used for the in-situ sputtering electrode;
Be provided with collar plate shape heating wheelwork in the middle of in vacuum cavity 5, this collar plate shape heating wheelwork is to be made of disk wheelwork and disk heating unit;
Described disk heating unit adopts symmetrical plane formula heating up and down, the disk heating unit comprises upper heating disk and following heating plate, this time heating plate is fixed on the base for supporting, and this upper heating disk is fastened on down on the heating plate, is respectively equipped with the sputter mouth of aiming at target on upper and lower heating disks in pyrolysis plant;
Described disk wheelwork is to be made of disk sample platform and wheelwork, and wheelwork comprises main rotary shaft, auxilliary rotation axis, and main rotary shaft connects sample table, drives sample table and be rotated heating in the heating, vacuum cavity, and auxilliary rotation axis connects heating plate down.
On the disk sample platform, be provided with the circular port that is used to place the large area superconducting film substrate evenly and at intervals.
Medial surface at upper heating disk medial surface and following heating plate is disposed with thermofin, quartzy soaking plate and heating member respectively, and heating member is fixed on the quartzy soaking plate.Thermofin is used for reducing the hot-fluid loss, plays heat insulation effect.
Described heating member is quartz lamp or METAL HEATING PROCESS silk.
The oxygen inlet mouth of evenly arranging around upper heating disk and following heating plate, the oxygen pressure is evenly distributed in the whole vacuum cavity when guaranteeing annealing.
Described auxilliary rotation axis is arranged in the main rotary shaft.
At target as sputter zone arranged around intake ducting, and the inlet mouth of evenly arranging, even to guarantee sputtering atmosphere.
In 180 ° of symmetric positions of upper and lower heating plate, respectively have the sputter mouth of sputtering target material size.
Advantage of the present invention is: owing to be provided with many targets, upper and lower surface sputter simultaneously and adopt the disk sample platform; can disposable loading multi-disc substrate material; the disk sample platform rotates heating in the heating, vacuum cavity simultaneously; upper and lower surface sputter simultaneously; accept the magnetron sputtering deposition thing and carry out film growth; realized batch preparation of double-faced high-temperature superconducting film, and Au protective membrane that can disposable original position plating high-temperature superconducting thin film.
Description of drawings
Fig. 1 is a structural representation of the present utility model
Fig. 2 be among Fig. 1 A-A to cross-sectional schematic
Fig. 3 is a collar plate shape heating wheelwork synoptic diagram in the utility model
Fig. 4 is a disk sample platform synoptic diagram in the utility model
Fig. 5 be among Fig. 3 B-B to cross-sectional schematic
Fig. 6 is the upper and lower heating disks in pyrolysis plant schematic perspective view in the utility model
Fig. 7 is target and the synoptic diagram that is provided with sputter area all around
Embodiment
Below in conjunction with description of drawings particular content of the present invention
Referring to Fig. 1～shown in Figure 7: a kind of batch preparation of double-faced high-temperature superconducting film device, it includes: a vacuum cavity 5, cylindrical, in the top cover 4 of this vacuum cavity and base plate on 6, symmetry arrangement large size plane or hollow cylinder shape high temperature superconducting materia target 1, and the metal targets 2 that is used for the in-situ sputtering electrode;
Be provided with collar plate shape heating wheelwork in the middle of in vacuum cavity 5, this collar plate shape heating wheelwork is to be made of disk wheelwork and disk heating unit;
Described disk heating unit adopts symmetrical plane formula heating up and down, the disk heating unit comprises upper heating disk 3 and following heating plate 7, this time heating plate 7 is fixed on the base for supporting 8, this upper heating disk 3 is fastened on down on the heating plate 7, is respectively equipped with sputter mouth 18,19 (see figure 7)s of aiming at target on upper and lower heating disks in pyrolysis plant;
Described disk wheelwork is to be made of disk sample platform 11 and wheelwork, wheelwork comprises main rotary shaft 9, auxilliary rotation axis 10, main rotary shaft clutch disk sample table 11 drives sample table and be rotated heating in heating, vacuum cavity 5, and auxilliary rotation axis 9 connects heating plate 7 down.
See shown in Figure 4: on disk sample platform 11, be provided with the circular port 17 that is used to place the large area superconducting film substrate evenly and at intervals.
See Fig. 3, shown in Figure 5: the medial surface at upper heating disk 3 medial surfaces and following heating plate 7 is disposed with thermofin 12, quartzy soaking plate 13 and heating member 14 respectively, and heating member is fixed on the quartzy soaking plate 13.
Described heating member 14 is quartz lamp or METAL HEATING PROCESS silk.
The oxygen inlet mouth 15 of evenly arranging on every side at upper heating disk 3 and following heating plate 7.
Auxilliary rotation axis 10 is arranged in the main rotary shaft 9.
See shown in Figure 7: around target, be provided with sputter area 19, at sputter area arranged around intake ducting 21, and the inlet mouth 22 of evenly arranging.
See shown in Figure 6:, respectively have the sputter mouth 18,19 of sputtering target material size in 180 ° of symmetric positions of upper and lower heating plate.
Upper heating disk 3 forms airtight disk heating unit by being fastened on down on the heating plate 7 through clip 22 and screw 23.Base for supporting 8 bottom surfaces and vacuum cavity base plate 6 are produced respectively when laying bearing ball 16 with convenient electrode plating in position, the sputter mouth that rotates heating unit over against last next organize symmetric metal targets and carry out electrode preparation.The effect of main rotary shaft 9 is to connect sample table 11, drives sample table and be rotated heating in heating, vacuum cavity 5.The effect of auxilliary rotation axis 10 is to connect heating unit, when the mobile sputter mouth of needs 18,19 positions, drives heating, vacuum cavity 5 and turns to the desired position.Main rotary shaft with the continuous (not shown) of adjustable speed motor, is controlled the sample speed of rotation through gear interlock mechanism.Auxilliary rotation axis 10 is linked to each other with manual rocking handle by gear interlock mechanism, in order to the rotation heating cavity.Leave the water-cooled path in the main and auxiliary rotation axis, be used for reducing the rotation axis temperature when preparing film, reduce the chance of rotation axis generation thermal-induced deformation under the situation of long-time heat in the heating sputter, and then the stationarity and the homogeneity that keep sample table to rotate.Be to guarantee vacuum seal, between main rotary shaft and the vacuum cavity, seal by the multilayer rubber circle between main rotary shaft and the auxilliary rotation axis.
The Circular Plate that disk sample platform 11 is spliced by several sector regions of symmetrical five equilibrium adopts high temperature material.On the disk sample platform according to actual needs such as the size of film, the numbers of sample and evenly dig out the circular hole 17 of laying large area superconducting film monocrystal chip anchor clamps.Each fan-shaped part is fixedly linked through screw with transmission main shaft end face in the transmission mechanism, makes main rotary shaft can drive the rotation of disk sample platform.
When mass prepares the large area two-side high-temperature superconducting thin film, because the vacuum cavity volume is bigger.At target as sputter zone arranged around intake ducting 21, and the inlet mouth 20 of evenly arranging, make the sputter area atmosphere homogeneous, the uneven distribution of avoiding occurring air pressure influences the homogeneity of film forming properties.The oxygen inlet mouth 15 of evenly arranging on every side at upper heating disk 3 and following heating plate 7.The interior oxygen of whole vacuum cavity is pressed and is evenly distributed in the time of can guaranteeing to anneal, and helps the consistence of annealing conditions.
Present embodiment is three groups of YBCO sputtering target materials of symmetric arrangement up and down; Target can be planar targets 1, also can be column hollow cylinder target: the number of sputtering target material, size are decided according to the needs of sputter rate and the dimensional requirement of large area two-side superconducting thin film; Wherein go up next and organize symmetrical target 2 and be the planar targets of Au, all the other are YBCO sputtering target material 1.
Main and auxiliary transmission shaft and transmission mechanism are installed according to assembly relation, and will carry out airtight with the multilayer cushion rubber between main and auxiliary transmission shaft and the vacuum cavity 5.Base for supporting 8 is placed on the vacuum cavity base plate 6 according to assembly relation, on main driving axle 9, fixes disk sample platform 11, after install heating plate 3, and up and down two portions heating plate is connected and fixed with clip 22 and screw 23.To assist between transmission shaft and the heating cavity fixing.Adjust the position of sputter mouth up and down, make it with laterally zygomorphic sputtering target material over against, back fixed support base and heating cavity.
Make prime with mechanical pump, pre-picking device vacuum pressure is opened molecular pump again and is vacuumized pressure to 5 * 10 to 30Pa
-3Below the Pa.Open wheelwork, adjust the sample table velocity of rotation, simultaneously substrate sample is heated.After being heated to film-forming temperature, logical sputter gas Ar/O
2, adjust sputtering pressure and carry out pre-sputter.Open plate washer after pre-sputter is finished and carry out the preparation of large area two-side superconducting thin film in batches.
Under the condition of 600-900 ℃ sample Heating temperature, sputter gas stagnation pressure 5-30Pa, sputtering current 1.5A, through 30 hours sputtering time, at LaAlO
3(100) 2 inches YBCO two-side film membranes of last 16 φ of preparation of monocrystal chip, the mean thickness of film can reach 300nm, Tc＞90K, average Jc＞1.5MA/cm
2, Rs＜1.0m Ω.
Claims (8)
1, a kind of batch preparation of double-faced high-temperature superconducting film device, it is characterized in that, it includes: a vacuum cavity (5), cylindrical, in the top cover (4) of this vacuum cavity and on the base plate (6), symmetry arrangement large size plane or hollow cylinder shape high temperature superconducting materia target (1), and the metal targets (2) that is used for the in-situ sputtering electrode;
Be provided with collar plate shape heating wheelwork in the middle of in vacuum cavity (5), this collar plate shape heating wheelwork is to be made of collar plate shape wheelwork and disk heating unit;
Described disk heating unit adopts symmetrical plane formula heating up and down, the disk heating unit comprises upper heating disk (3) and following heating plate (7), this time heating plate (7) is fixed on the base for supporting (8), this upper heating disk (3) is fastened on down on the heating plate (7), is respectively equipped with the sputter mouth (18,19) of aiming at target on upper and lower heating disks in pyrolysis plant;
Described disk wheelwork is to be made of disk sample platform (11) and wheelwork, wheelwork comprises main rotary shaft (9), auxilliary rotation axis (10), main rotary shaft clutch disk sample table (11), drive sample table and be rotated heating in heating, vacuum cavity (5), auxilliary rotation axis (10) connects heating plate (7) down.
2, batch preparation of double-faced high-temperature superconducting film device according to claim 1 is characterized in that: be provided with the circular port (17) that is used to place the large area superconducting film substrate on disk sample platform (11) evenly and at intervals.
3, batch preparation of double-faced high-temperature superconducting film device according to claim 1, it is characterized in that: the medial surface at upper heating disk (3) medial surface and following heating plate (7) is disposed with thermofin (12), quartzy soaking plate (13) and heating member (14) respectively, and heating member is fixed on the quartzy soaking plate (13).
4, batch preparation of double-faced high-temperature superconducting film device according to claim 3 is characterized in that: described heating member (14) is quartz lamp or METAL HEATING PROCESS silk.
5, batch preparation of double-faced high-temperature superconducting film device according to claim 1 is characterized in that: the oxygen inlet mouth (15) of evenly arranging around upper heating disk (3) and following heating plate (7).
6, batch preparation of double-faced high-temperature superconducting film device according to claim 1 is characterized in that: auxilliary rotation axis (10) is arranged in the main rotary shaft (9).
7, batch preparation of double-faced high-temperature superconducting film device according to claim 1 is characterized in that: around target, be provided with sputter area (19), and at sputter area arranged around intake ducting (21), and the inlet mouth (22) of evenly arranging.
8, batch preparation of double-faced high-temperature superconducting film device according to claim 1 is characterized in that: in 180 ° of symmetric positions of upper and lower heating plate, respectively have the sputter mouth (18,19) of sputtering target material size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620119334 CN200943101Y (en) | 2006-08-28 | 2006-08-28 | Batch preparation of double-faced high-temperature superconducting film device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620119334 CN200943101Y (en) | 2006-08-28 | 2006-08-28 | Batch preparation of double-faced high-temperature superconducting film device |
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| CN200943101Y true CN200943101Y (en) | 2007-09-05 |
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| CN 200620119334 Expired - Lifetime CN200943101Y (en) | 2006-08-28 | 2006-08-28 | Batch preparation of double-faced high-temperature superconducting film device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560360A (en) * | 2010-12-16 | 2012-07-11 | 中国科学院福建物质结构研究所 | Preparation equipment system of MgZnO film and method thereof |
| CN106868465A (en) * | 2017-02-23 | 2017-06-20 | 北京创世威纳科技有限公司 | A kind of device for vacuum chamber magnetron sputtering |
| CN106906448A (en) * | 2017-02-23 | 2017-06-30 | 北京创世威纳科技有限公司 | A kind of heater for vacuum chamber |
| CN110527966A (en) * | 2019-09-05 | 2019-12-03 | 西安交通大学 | A kind of horizontal magnetron sputtering apparatus for long tube plated film |
-
2006
- 2006-08-28 CN CN 200620119334 patent/CN200943101Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560360A (en) * | 2010-12-16 | 2012-07-11 | 中国科学院福建物质结构研究所 | Preparation equipment system of MgZnO film and method thereof |
| CN106868465A (en) * | 2017-02-23 | 2017-06-20 | 北京创世威纳科技有限公司 | A kind of device for vacuum chamber magnetron sputtering |
| CN106906448A (en) * | 2017-02-23 | 2017-06-30 | 北京创世威纳科技有限公司 | A kind of heater for vacuum chamber |
| CN106868465B (en) * | 2017-02-23 | 2019-05-10 | 北京创世威纳科技有限公司 | A kind of application method of the device for vacuum chamber magnetron sputtering |
| CN110527966A (en) * | 2019-09-05 | 2019-12-03 | 西安交通大学 | A kind of horizontal magnetron sputtering apparatus for long tube plated film |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20060828 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |