CN200941325Y - Surface attaching positive coefficient thermistor - Google Patents
Surface attaching positive coefficient thermistor Download PDFInfo
- Publication number
- CN200941325Y CN200941325Y CN 200620043470 CN200620043470U CN200941325Y CN 200941325 Y CN200941325 Y CN 200941325Y CN 200620043470 CN200620043470 CN 200620043470 CN 200620043470 U CN200620043470 U CN 200620043470U CN 200941325 Y CN200941325 Y CN 200941325Y
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- CN
- China
- Prior art keywords
- chip
- coefficient thermistor
- surface mount
- temperature coefficient
- positive temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to a PTC thermistor used for surface mount, consisting of a PTC thermistor chip in lamellar shape and two upper and bottom metal coupons and a conductive connection layer. The utility model turns the metal coupons into a surface mount electrode by kinking from inside on basis of automatic surface mount of components and arranges the surface mount electrode at the same side of the PTC thermistor chip in lamellar shape, which can greatly save pad surface of a printed circuit board compared with traditional way of kinking the surface mount electrode of the metal coupon from outside and of arranging the surface mount electrode at two sides of the PTC thermistor chip, and can be used in such situation highly requiring integration of the printed circuit without affecting function realization of the PTC thermistor chip in lamellar shape.
Description
Technical field the utility model relates to a kind of positive temperature coefficient thermistor that can be used for surface mounting technology.
The background technology positive temperature coefficient thermistor has been widely used in various fields such as communication, computer, automobile, Industry Control, electronics.The application past is adopted the through hole solder technology to the use of element more, and in recent years, surface mounting technology uses in a large number.Traditional positive temperature coefficient thermistor element pasted on surface adopts sheet metal outwards to be bent to form electrode more, and electrode places the flatwise mounting method of the relative both sides of element simultaneously.Along with developing rapidly of surface mounting technology, surface mount requirement to positive temperature coefficient thermistor is also more and more higher, do not influencing on the basis that the positive temperature coefficient thermistor function realizes, it is more and more narrower and small that printed circuit board (PCB) is left the space of element for, and integrated level is more and more higher.
The summary of the invention the purpose of this utility model is to provide a kind of surface attaching type positive temperature coefficient thermistor, compare with traditional positive temperature coefficient thermistor element pasted on surface, can effectively reduce printed circuit board pads and take up room, with satisfy application to pass the positive temperature coefficient thermistor element pasted on surface higher mount requirement.Do not damage simultaneously the performance of positive temperature coefficient thermistor, satisfy the function realization requirement of application scenario positive temperature coefficient thermistor.
When positive temperature coefficient thermistor provided by the utility model is worked; electric current flows through chip by two metal electrode films up and down; when electric current surpasses the resistor threshold value; the resistance value of thermistor increases rapidly; electric current passes through in the restricting circuits, thereby realizes the overcurrent protection effect to circuit.
Purpose of design of the present utility model can be realized by following method: it is made up of synusia shape semistor chip (3), sheet metal (1,2) and conduction articulamentum (4), is electrically connected by conduction articulamentum (4) formation between synusia shape semistor chip (3) and the sheet metal (1,2).In order to realize purpose of design of the present utility model, should make up and down two sheet metals (1,2) size, shape in full accord, the part of sheet metal (1,2) excess layer PTC chip thermistor chips (3) bends inwards and forms the surface mount electrode, and two electrodes place phase the same side of synusia shape semistor chip (3).
All can form conduction articulamentum (4) between above-mentioned synusia shape semistor chip (3) and the sheet metal (1,2) by solder reflow process or other welding procedures, thereby reach the purpose that formation is electrically connected between synusia shape semistor chip (3) and the sheet metal (1,2).For avoiding synusia shape semistor chip (3) performance to be subjected to welding temperature to influence deterioration, welding temperature should be low as far as possible in allowed band.
Can also be by the conduction adhesive technology, the conducting resinl that uses macromolecular material such as epoxy resin, phenolic resins etc. and conductive particulate materials such as copper powder, silver powder etc. to be compounded to form is made the conduction articulamentum (4) between above-mentioned synusia shape semistor chip (3) and the sheet metal (1,2).Be technical indicators such as the zero power resistance of avoiding influencing the high molecular based PTC thermistor, operate time, operating current, used conducting resinl resistivity of material is less than 10
-2Ω cm.
Synusia shape semistor chip (3) can adopt known general-purpose technology to make, and matrix can be a macromolecular material, also can be ceramic material.
Fig. 1 is a structural front view of the present utility model in the appended drawings, and Fig. 2 is a left view, and Fig. 3 is a vertical view.
Fig. 4 is the schematic appearance of sheet metal (1,2).
Embodiment also is described in further detail the utility model in conjunction with the accompanying drawings below by specific embodiment.
Embodiment one: structure is seen accompanying drawing Fig. 1～Fig. 3, and composition and method that synusia shape semistor chip (3) is announced by United States Patent (USP) 4724417 are made, and room temperature resistance value 6.0 Ω of chip are of a size of 6mm * 6mm * 2mm.The 63-GS155-GK type solder(ing) paste that conduction articulamentum (4) adopts Japanese GENMA Hong Kong Co., Ltd to produce is electrically connected through forming metal after the Reflow Soldering.Conduction articulamentum (4) volume resistance≤2 * 10
-5Ω cm.Final Fig. 1～the sample shown in Figure 3 that forms is compared with tradition stratum PTC chip thermistor surface mount part, takies bonding pad area and reduces 70%.
Embodiment two: still adopt the chip among the embodiment one, conduction articulamentum (4) adopts the DS-0915A type conducting resinl of Korea S DAEJOO Electron Material Co., Ltd, solidify to form in 150 ℃/30 minutes, and solidification process can be finished in constant temperature oven or other firing equipments.Conduction articulamentum (6) volume resistance≤2 * 10
-4Ω cm.Finally also form Fig. 1～sample shown in Figure 3.
Claims (4)
1. surface attaching type positive temperature coefficient thermistor, it is made up of synusia shape semistor chip (3), upper metal sheet (1) and lower metal sheet (2), it is characterized in that: semistor chip (3) is the synusia shape, by conduction articulamentum (4) make semistor chip (3) and up and down two sheet metals (1,2) realizations be electrically connected.
2. surface attaching type positive temperature coefficient thermistor as claimed in claim 1 is characterized in that: the part of two sheet metal (1,2) excess layer PTC chip thermistor chips (3) bends inwards up and down, forms the surface mount electrode.3. surface attaching type positive temperature coefficient thermistor as claimed in claim 1 or 2 is characterized in that: the part that bends inwards of two sheet metal (1,2) excess layer PTC chip thermistor chips (3) is at the homonymy of synusia shape semistor chip (3) up and down.
4. surface attaching type positive temperature coefficient thermistor as claimed in claim 1 is characterized in that: conduction articulamentum (4) can be formed by Reflow Soldering or other welding manners, also can be gluedd joint by conduction to form.
5. surface attaching type positive temperature coefficient thermistor as claimed in claim 4 is characterized in that: the resistivity of conduction articulamentum (4) is less than 10
-2Ω cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620043470 CN200941325Y (en) | 2006-06-30 | 2006-06-30 | Surface attaching positive coefficient thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620043470 CN200941325Y (en) | 2006-06-30 | 2006-06-30 | Surface attaching positive coefficient thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN200941325Y true CN200941325Y (en) | 2007-08-29 |
Family
ID=38747501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620043470 Expired - Fee Related CN200941325Y (en) | 2006-06-30 | 2006-06-30 | Surface attaching positive coefficient thermistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN200941325Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104885258B (en) * | 2012-12-17 | 2018-05-18 | Itm半导体有限公司 | Battery protection module encapsulates |
| CN109963361A (en) * | 2017-12-22 | 2019-07-02 | 埃贝赫卡腾有限两合公司 | Manufacture the method for being thermally generated element |
-
2006
- 2006-06-30 CN CN 200620043470 patent/CN200941325Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104885258B (en) * | 2012-12-17 | 2018-05-18 | Itm半导体有限公司 | Battery protection module encapsulates |
| CN109963361A (en) * | 2017-12-22 | 2019-07-02 | 埃贝赫卡腾有限两合公司 | Manufacture the method for being thermally generated element |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |