CN1996145B - Method for reducing water pollution of optical elements in immersion type photoengraving technology - Google Patents
Method for reducing water pollution of optical elements in immersion type photoengraving technology Download PDFInfo
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- CN1996145B CN1996145B CN2005100033720A CN200510003372A CN1996145B CN 1996145 B CN1996145 B CN 1996145B CN 2005100033720 A CN2005100033720 A CN 2005100033720A CN 200510003372 A CN200510003372 A CN 200510003372A CN 1996145 B CN1996145 B CN 1996145B
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Abstract
The invention relates to the method of reducing water solution contamination to optical component through optimization process, adding surface active fluid to pre wetting the silicon before it dipping into the optical etching equipment and contacting with water, removing additional optical acid generator or other surface contamination, greatly reducing contamination of water solution with improved evenness of the silicon image.
Description
Technical field
The present invention relates to field of IC technique, particularly a kind ofly reduce the method that optics is stain by aqueous solution in the immersion lithography.
Background technology
Follow the continuous progress of integrated circuit fabrication process, constantly the dwindling of live width, it is more and more littler that the area of semiconductor devices is just becoming, and semi-conductive layout develops into the integrated circuit of integrating high-density multifunction from common simple function discrete device; By initial integrated circuit (IC) subsequently to large scale integrated circuit (LSI), VLSI (very large scale integrated circuit) (VLSI), until the ULSI (ULSI) of today, the area of device further dwindles, function is powerful more comprehensively.Consider the complicacy of technique research and development, the restriction of chronicity and high cost or the like unfavorable factor, how on the basis of prior art level, further to improve the integration density of device, dwindle area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thereby the raising overall interests will more and more be subjected to the chip designer, the attention of manufacturer.
The diffraction of optics is light by the opaque body edge, passes slit or produce deviation and some bright band parallel to each other and blanking bars occur when drawing the surface reflection that parallel lines is arranged.The photoetching technique of using in the semiconductor production is mainly based on above-mentioned principle.When light passes through mask, owing to be subjected to the influence of mask plate patterns, make light generation deviation, thereby produce the different diffraction progression of quantity, basic calculating worker formula according to the size of mask plate patterns:
P*Sin α=n* λ (formula 1)
P is the summation of the width of the transparent region of figure and opaque section; α is an angle of diffraction; λ is the wavelength that litho machine uses; N promptly is a diffraction progression.
According to numerical aperture, the notion of resolution and computing formula:
NA=N*Sin α (formula 2)
R=K1* λ/NA (formula 3)
NA (Numerical Aperture) is the important sign of photoetching machine lens ability, the high more resolution R that it brings is high more for numerical value, K1 is the coefficient factor, ability with technology, the wavelength of equipment, the basic parameter of numerical aperture etc. is relevant, and N is the refractive index of medium between optical lens and the silicon chip, and the numerical aperture of the big more gained of refractive index is also high more.
Usually the medium of dry lithography technology is an air, thus the size of numerical aperture only to catch angle of diffraction relevant with maximum.Catch angle of diffraction when numerical aperture can obtain maximum by formula 2 when certain definite value, bring formula 1 thus into and obtain the diffraction progression that to be collected by camera lens.As shown in Figure 1, when light during by the figure 1 on the mask, diffraction effect can take place, the diffracted ray 2 of different progression is outwards launched, the diffracted ray that angle is accepted scope above the equipment camera lens can lose, bury in oblivion, and remaining diffracted ray is collected and assembled by lens group, finally by main lens 3, enter the media fluid 5 between silicon chip 4 and equipment, last imaging.Because liquid refractive index greater than 1, causes the numerical aperture of equipment also can improve greatly thereupon, thereby the leap that brings resolution.The diffraction progression of collecting is many more, and the degree true to nature of figure is high more, and the spatial image contrast that obtains thus also can improve greatly.Spatial image is absorbed by photochromics subsequently, by developing to picture.Above-mentioned several formula as can be known, the main mode of dwindling live width on optical technology is the effective wavelength that improves numerical aperture and reduce exposure.Owing to need to seek suitable wave band, appropriate optical lens material and the photochromics of researching and developing sensitization commissure resin, cause realizing that the latter's difficulty is significantly higher.It is therefore, emerging that photoetching technique---the immersion exposure technology is arisen at the historic moment.The immersion exposure technology, as the term suggests promptly be silicon chip to be immersed in carry out exposing operation in the high refractive index liquid, because numerical aperture is caught angle of diffraction with medium refraction index and maximum and is directly proportional, therefore, the immersion exposure technology of wet method can enlarge medium refraction index N doubly than the exposure of dry method on numerical aperture.
Although in the past few years, immersion lithography has obtained significant progress, and still having some problems and challenge to confront at present needs to solve.Wherein mainly be the reciprocal effect problem of photochromics, from photochromics, disengage material, infiltrate in the liquid, in exposure process subsequently, can exert an influence, and then corrode optics, reduce its expressive force the camera lens base material.
Summary of the invention
The object of the present invention is to provide a kind of method that optics is stain by aqueous solution in the immersion lithography that reduces, reduce aqueous solution and pollute, avoid staiing optics.
The present invention is achieved by the following technical solutions: a kind ofly reduce the method that optics is stain by aqueous solution in the immersion lithography, before the silicon chip of coating photochromics enters immersion lithographic apparatus and moisture contacts, with the liquid wash silicon chip that adds surfactant, silicon chip is fully prewetted, through overexposure, development, finish graphic making then.Reducing the method that optics is stain by aqueous solution in the immersion lithography comprises the steps:
(1) silicon chip enters automatic double surface gluer, coating photochromics, baking for the first time, cooling for the first time;
(2) with the liquid wash silicon chip that adds surfactant, silicon chip is fully prewetted;
(3) silicon chip enters immersion lithographic apparatus, exposure;
(4) silicon chip enters developing apparatus, baking for the second time, and cooling is for the second time developed subsequently, finishes graphic making;
Wherein, described photochromics comprises ketone or ethers or alkanes organic solvent, photosensitive cross-linking resin, optical acid generating agent and trace metal ion, molecular weight is between 85000 to 150000, the molar weight ratio of organic solvent and photosensitive cross-linking resin and optical acid generating agent is 1: X: Y, wherein, X and Y are 5～100.
Each coating dosage of described photochromics is that 1.5ml is to 5ml; The temperature of the described baking first time and the described second time of baking is 60 ℃ to 250 ℃, and the time of the described baking first time and the described second time of baking is 10 seconds to 120 seconds; The temperature of the described cooling first time and the described second time of cooling is 15 ℃ to 25 ℃, and the time of the described cooling first time and the described second time of cooling is 20 seconds to 60 seconds.
The liquid of described surfactant is made of jointly at least a and water in salt, acids, ethanol or its derivant, the low-molecular-weight hydrocarbon, proportioning can be 1: 100 to 1: 1000, is used for removing extra unnecessary optical acid generating agent of photoresist or other surface contaminant.
Described flush time is 1 second to 60 seconds, and using the temperature of liquid is 15 ℃ to 25 ℃.
The present invention changes the rotine exposure flow sequence, by gluing-＞exposure-＞develop, become gluing-＞silicon chip of prewetting-＞exposure-＞develop.Because transition sharp can take place in the surface measurement value of optical acid generating agent in just contacting a minute of water; silicon chip with utilize the liquid that the has described surfactant silicon chip of prewetting before moisture in the immersion lithography process with filtered air contacts; can remove extra unnecessary optical acid generating agent or other surface contaminant; prevent to disengage in the photochromics influence of material to producing the camera lens base material in the exposure process subsequently, so the protection optics avoid be etched.
Description of drawings
Fig. 1 is the synoptic diagram of optical diffraction;
Fig. 2 is the synoptic diagram that wetting liquid removes optical acid generating agent.
Label declaration:
1, mask plate patterns 2, diffracted ray 3, camera lens 4, silicon chip
5, media fluid 6, flushing wetting liquid 7, optical acid generating agent 8, photochromics
Embodiment
A kind ofly reducing the method that optics is stain by aqueous solution in the immersion lithography, at first is that silicon chip enters automatic double surface gluer, the coating photochromics.Described light sensitive material comprises ketone or ethers or alkanes organic solvent, photosensitive cross-linking resin, optical acid generating agent and trace metal ion, molecular weight is between 85000 to 150000, the molar weight ratio of organic solvent and photosensitive cross-linking resin and optical acid generating agent is 1: X: Y, wherein, X and Y are 5～100, are 1: 20: 50,1: 40: 100 etc. such as preset proportion.Each coating dosage is 1.5ml, 2ml, 3ml, 4ml or 5ml; Described each baking temperature is 60 ℃, 100 ℃, 120 ℃, 150 ℃ or 250 ℃, and stoving time is 10 seconds, 30 seconds, 50 seconds, 80 seconds or 120 seconds; Chilling temperature is 15 ℃, 20 ℃, 23 ℃ or 25 ℃, and be 20 seconds, 30 seconds, 40 seconds, 50 seconds or 60 seconds cool time.
Secondly, with the liquid wash silicon chip that adds surfactant, silicon chip is fully prewetted, the liquid of surfactant is made of jointly at least a and water in salt, acids, ethanol or its derivant, the low-molecular-weight hydrocarbon, proportioning can be 1: 100,1: 200,1: 300,1: 400,1: 500 or 1: 1000, and the liquid of above-mentioned adding surfactant is as the flushing wetting liquid of flushing silicon chip.See also Fig. 2, be included in optical acid generating agent unnecessary in the coating technique 7 in the photochromics 8 on silicon chip 4 surfaces of rotation, by flushing wetting liquid 6 flushing silicon chips 4 surfaces, utilize the surfactant in the flushing wetting liquid 6 to remove optical acid generating agent extra unnecessary in the photoresist or other surface contaminant.Flush time is 1 second, 10 seconds, 15 seconds or 60 seconds, and using the temperature of liquid is 15 ℃, 20 ℃, 23 ℃ or 25 ℃.
Then, silicon chip enters immersion lithographic apparatus, exposure.
At last, silicon chip enters developing apparatus, baking, and cooling is developed subsequently, finishes graphic making.
Because the present invention is by changing the rotine exposure flow sequence, with traditional flow process: gluing-＞exposure-＞develop, become gluing-＞silicon chip of prewetting-＞exposure-＞develop, added the flow process of the silicon chip of prewetting, therefore the flow process to the gluing in the conventional procedures, exposure and development just no longer describes in detail.
The present invention relates to a kind of method that optics is stain by aqueous solution in the immersion lithography that reduces, by optimizing technological process, before silicon chip enters immersion lithographic apparatus and moisture contacts, the liquid that adopt the to add surfactant silicon chip of fully prewetting, remove extra unnecessary optical acid generating agent or other surface contaminant, significantly reduced the pollution problem that produces aqueous solution subsequently, avoided staiing optics and improve silicon chip image homogeneity.
Claims (5)
1. one kind is reduced the method that optics is stain by aqueous solution in the immersion lithography, it is characterized in that: before the silicon chip of coating photochromics enters immersion lithographic apparatus and moisture contacts, with the liquid wash silicon chip that adds surfactant, silicon chip is fully prewetted, through overexposure, development, finish graphic making then;
The liquid of described surfactant is made of jointly at least a and water in salt, acids, ethanol or its derivant, the low-molecular-weight hydrocarbon, proportioning can be 1: 100 to 1: 1000, is used for removing extra unnecessary optical acid generating agent of photoresist or other surface contaminant.
2. the method that optics is stain by aqueous solution in the reduction immersion lithography as claimed in claim 1 is characterized in that comprising the steps:
(1) silicon chip enters automatic double surface gluer, coating photochromics, baking for the first time, cooling for the first time;
(2) with the liquid wash silicon chip that adds surfactant, silicon chip is fully prewetted;
(3) silicon chip enters immersion lithographic apparatus, exposure;
(4) silicon chip enters developing apparatus, baking for the second time, and cooling is for the second time developed subsequently, finishes graphic making.
3. the method that optics is stain by aqueous solution in the reduction immersion lithography as claimed in claim 2, it is characterized in that: described photochromics comprises ketone or ethers or alkanes organic solvent, photosensitive cross-linking resin, optical acid generating agent and trace metal ion, molecular weight is between 85000 to 150000, the molar weight ratio of organic solvent and photosensitive cross-linking resin and optical acid generating agent is 1: X: Y, wherein, X and Y are 5～100.
4. the method that optics is stain by aqueous solution in the reduction immersion lithography as claimed in claim 3 is characterized in that: each coating dosage of described photochromics is that 1.5ml is to 5ml; The temperature of the described baking first time and the described second time of baking is 60 ℃ to 250 ℃, and the time of the described baking first time and the described second time of baking is 10 seconds to 120 seconds; The temperature of the described cooling first time and the described second time of cooling is 15 ℃ to 25 ℃, and the time of the described cooling first time and the described second time of cooling is 20 seconds to 60 seconds.
5. the method that optics is stain by aqueous solution in the reduction immersion lithography as claimed in claim 1 or 2 is characterized in that: described flush time is 1 second to 60 seconds, and the temperature of using described liquid is 15 ℃ to 25 ℃.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2005100033720A CN1996145B (en) | 2005-12-31 | 2005-12-31 | Method for reducing water pollution of optical elements in immersion type photoengraving technology |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2005100033720A CN1996145B (en) | 2005-12-31 | 2005-12-31 | Method for reducing water pollution of optical elements in immersion type photoengraving technology |
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| Publication Number | Publication Date |
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| CN1996145A CN1996145A (en) | 2007-07-11 |
| CN1996145B true CN1996145B (en) | 2010-08-25 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577106A (en) * | 2003-07-16 | 2005-02-09 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN1624588A (en) * | 2003-08-11 | 2005-06-08 | 台湾积体电路制造股份有限公司 | Immersion lithographic system and method of manufacturing semiconductor device |
| CN1655061A (en) * | 2003-08-25 | 2005-08-17 | 台湾积体电路制造股份有限公司 | Immersion lithography system, and method of performing irradiation to semiconductor structure having a photoresistive layer |
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- 2005-12-31 CN CN2005100033720A patent/CN1996145B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577106A (en) * | 2003-07-16 | 2005-02-09 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN1624588A (en) * | 2003-08-11 | 2005-06-08 | 台湾积体电路制造股份有限公司 | Immersion lithographic system and method of manufacturing semiconductor device |
| CN1655061A (en) * | 2003-08-25 | 2005-08-17 | 台湾积体电路制造股份有限公司 | Immersion lithography system, and method of performing irradiation to semiconductor structure having a photoresistive layer |
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| CN1996145A (en) | 2007-07-11 |
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