CN1992198A - Carbon nano-tube generating method and method for forming electric wire of semiconductor device - Google Patents

Carbon nano-tube generating method and method for forming electric wire of semiconductor device Download PDF

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CN1992198A
CN1992198A CNA2006101536967A CN200610153696A CN1992198A CN 1992198 A CN1992198 A CN 1992198A CN A2006101536967 A CNA2006101536967 A CN A2006101536967A CN 200610153696 A CN200610153696 A CN 200610153696A CN 1992198 A CN1992198 A CN 1992198A
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gas
catalyst layer
carbon nano
tube
described catalyst
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韩仁泽
金夏辰
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02606—Nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

A method of growing a carbon nanotube and a method for forming conductive lines of a semiconductor device by using the carbon nanotube are provided. The method for forming conductive lines of a semiconductor device comprises: manufacturing a substrate; forming a plurality of projected electrodes on the substrated; forming a catalyzer layer on the electrodes, covering the projections and accelerating growing of the carbon nanotube; forming an insulative layer covering the catalyzer layer; forming via holes in the insulative layer for exposing a part of a surface of the catalyzer layer; and growing the carbon nanotube on the surface of the catalyzer layer by implanting a carbon-containing gas in the via holes above the surface of the catalyzer layer to form the conductive lines. The method for forming the conductive lines can be used for reducing resistance of the semiconductor device and increasing a current density of the semiconductor device, and can realize an ultra-integration of the semiconductor device because the carbon nanotube conductive lines is capable of being used for puny via holes.

Description

The method of the conductor wire of the method for carbon nano-tube and formation semiconductor device
Technical field
The present invention relates to a kind of method of carbon nano-tube and utilize carbon nano-tube to form the method for conductor wire, more specifically, relate to a kind of method and a kind of method of utilizing carbon nano-tube to form conductor wire (conductive line) that can improve the carbon nano-tube of carbon nanotube density, can reduce resistance and improve current density by this method.
Background technology
The example of semiconductor device comprises the semiconductor storage unit such as dynamic ram (DRAM), static RAM (SRAM) (SRAM), phase transformation RAM (PRAM), magnetic RAM (DRAM) etc.Semiconductor storage unit comprises Metal-oxide-semicondutor (MOS) transistor that utilizes switching device, comprises that also electronics moves by conductor wire such as the conductor wire of contact (contact) and interconnection (interconnection).
Along with the increase of semiconductor storage unit integration density, the live width of conductor wire reduces and the amount of electric current, and promptly current density increases.The current density of expectation conductor wire of semiconductor device in the period of 2010-2019 reaches about 10 6A/cm 2
Conventional semiconductor device mainly uses metal conductive wire, for example aluminium or conductive copper wire.Yet, when using metal, reduce the live width of conductor wire and improve current density to be restricted.
In order to improve the integration density of semiconductor device, must to reduce live width, and must will improve current density.Yet for above-mentioned reasons, utilize the integration density of the semiconductor device of metal conductive wire to be restricted.
Therefore, in order to improve the integration density of semiconductor device, carried out replacing with the carbon nanotube conducting line trial of metal conductive wire, compared with metal conductive wire, the carbon nanotube conducting line can have higher current density with littler live width.But, even the conductor wire of semiconductor device is formed by carbon nano-tube, the integration density of semiconductor device also can be further enhanced.Therefore, the densification of carbon nano-tube (densification) becomes important problem.
Figure 1A is the vertical cross-section view that the conventional method of carbon nano-tube is shown to Fig. 1 E.
With reference to Figure 1A, use NH 3Be formed with the substrate 10 of catalyst layer 12 on it in etching under about 600 ℃ temperature, on catalyst layer 12, to form catalyst granules (grains) 12a.The surface of catalyst layer 12 keeps uniform state, carbon film will be formed on the surface of catalyst layer 12 rather than forms carbon nano-tube 14 if do not form catalyst granules 12a on catalyst layer 12.
Next, inject as the carbonaceous gas of CO and as H by remaining on to temperature in 500 to 900 ℃ the reative cell (not shown) 2, N 2, or the gas of Ar gas, on the surface of catalyst granules 12a, form carbon nano-tube 14.
With reference to Figure 1B, the carbon of carbonaceous gas is decomposed out below catalyst granules 12a.With reference to figure 1C, in the carbon that decomposes below the catalyst granules 12a saturated and precipitation of form with graphite below catalyst granules 12a.When continuing injecting gas, with reference to figure 1D, graphite forms carbon nano-tube 14 in the lower face growth of catalyst granules 12a.Fig. 1 E shows the carbon nano-tube 14 that grows on the catalyst layer 12.
In Fig. 1 E, the part of the surf zone of the catalyst layer 12 that is occupied by carbon nano-tube 14 is by fill factor (fill factor) definition, and fill factor is represented the stand density of carbon nano-tube 14.In order to increase fill factor, must to reduce the gap between the catalyst granules 12a.For this reason, in the prior art, form thick catalyst layer 12 to reduce the particle size of catalyst granules 12a, because have little gap between the bigger particle.Yet,, make the integration density existence restriction that improves semiconductor device in this way by the density that improves carbon nano-tube owing to the degree of crystallinity of the carbon nano-tube that is grown in larger particles is poor.
Summary of the invention
The invention provides a kind of method of carbon nano-tube, can improve the density of carbon nano-tube by this method.
The present invention also provides a kind of method that forms the conductor wire of semiconductor device, and this conductor wire has low resistance and high current density.
The present invention also provides a kind of method that forms the conductor wire of semiconductor device, can realize that by this method the hypervelocity of semiconductor device is integrated, because the carbon nanotube conducting line also can be applied to micro-through-hole.
According to an aspect of the present invention, provide a kind of method of carbon nano-tube, this method comprises: the substrate that preparation has a plurality of projections; Form the catalyst layer that covers projection and promote carbon nano tube growth; And by carbon nano-tube on the surface to injecting carbonaceous gas on the catalyst layer at catalyst layer.
Described method can also comprise: on catalyst layer that form to cover projection and the surface at catalyst layer between the carbon nano-tube, form catalyst granules by the surface of handling catalyst layer.
The catalyst granules that forms catalyst layer can comprise: from by N 2Gas, Ar gas, H 2Gas, He gas, Ne gas and NH 3The surface of heat treatment catalyst layer under the atmosphere of at least a gas of selecting in the group that gas constitutes.
The catalyst granules that forms catalyst layer can comprise: with Ionized Ar gas, NH 3Gas or N 2The surface of gas bombardment catalyst layer.The projection of substrate can be sphere, cylindricality, pyramid or its combination.
Can use hot CVD method or PECVD method to form carbon nano-tube.
Catalyst layer can form predetermined thickness, makes the surface of catalyst layer have identical or similar shape with projection.
Catalyst layer can be formed by at least a metal of selecting the group that constitutes from Ni, Fe, Co, Pt, Mo, W, Y, Au, Pd and alloy thereof.
Catalyst layer can use magnetron sputtering system or vapour deposition method to form.
Can under 400 to 900 ℃ temperature, carry out the growth of carbon nano-tube.
In the growth of carbon nano-tube, carbonaceous gas can comprise from by CH 4, C 2H 2, C 2H 4, C 2H 6, CO and CO 2At least a gas of selecting in the group that constitutes, and carbonaceous gas can with from by H 2Gas, N 2Gas, O 2Gas, H 2The gas of selecting in the group that O steam and Ar gas constitute injects reative cell together.
According to a further aspect in the invention, provide a kind of method that forms the conductor wire of semiconductor device, it comprises: the preparation substrate; On substrate, form electrode with a plurality of projections; On electrode, form the catalyst layer that covers projection and promote carbon nano tube growth; Form the insulating barrier of covering catalyst layer; The through hole of the part on the surface of formation exposed catalyst layer in insulating barrier; And by on catalyst layer, injecting carbonaceous gas in the direction through hole, carbon nano-tube on the surface of catalyst layer, thereby formation conductor wire.
This method can also comprise: form catalyst granules by the surface of handling catalyst layer between the insulating barrier of catalyst layer that forms the covering projection and formation covering catalyst layer.
Can form the catalyst granules of catalyst layer by the method that forms carbon nano-tube according to another embodiment of the present invention.
The projection of electrode can be at least a or its combination in sphere, cylindricality, the pyramid.
Can form carbon nano-tube and catalyst layer by the method that forms carbon nano-tube according to another embodiment of the present invention.
Insulating barrier can be formed by oxide.
Description of drawings
By being described in detail with reference to the attached drawings its one exemplary embodiment, above-mentioned and other features of the present invention and advantage will become more obvious, in the accompanying drawing:
Figure 1A is the vertical cross-section view that the conventional method of carbon nano-tube is shown to Fig. 1 E;
Fig. 2 A has provided vertical cross-section view, shows the method according to embodiment of the invention carbon nano-tube;
Fig. 2 B utilizes the vertical cross-section view of the method for conventional carbon nano-tube from the catalyst layer surface carbon nanotubes grown, as the operation (e) of Fig. 2 A Comparative Examples of carbon nanotubes grown afterwards;
Fig. 3 is the atomic force microscope photo of the catalyst layer that uses the method shown in Fig. 2 A and form on substrate;
Fig. 4 is for using scanning electron microscopy (SEM) photo of the method shown in Fig. 2 A from the catalyst layer surface carbon nanotubes grown; And
Fig. 5 A is a vertical cross-section view to 5E, shows use forms the conductor wire of semiconductor device according to the method for the carbon nano-tube of the embodiment of the invention method.
Embodiment
Describe the present invention more fully referring now to accompanying drawing, one exemplary embodiment of the present invention has been shown in the accompanying drawing.Similar Reference numeral is represented like in the accompanying drawing.
Fig. 2 A has provided vertical cross-section view, shows the method according to embodiment of the invention carbon nano-tube.Fig. 2 B utilizes the vertical cross-section view of the method for conventional carbon nano-tube from the catalyst layer surface carbon nanotubes grown, as the operation (e) of Fig. 2 A Comparative Examples of carbon nanotubes grown afterwards.
With reference to (a) of figure 2A, preparation has the substrate 110 of a plurality of projection 110a.Substrate 110 can be formed by silicon wafer or glass.The projection 110a that is formed on the substrate 110 can have sphere, cylindricality, pyramid or its combination, but the invention is not restricted to this.The shape of projection 110a can be any shape that can increase the surface area of substrate 110.Projection 110a can form one with substrate 110 or can separate with substrate 110.In the present embodiment, projection 110a is by forming with golden coated glass substrate 110.
Next, with reference to (b) of figure 2A, on substrate 110, form the catalyst layer 122 that covers projection 110a.Catalyst layer 122 can form predetermined thickness, makes the surface of catalyst layer 122 can have identical with projection 110a or similar shape.If the thickness of catalyst layer 122 is greater than predetermined thickness, catalyst layer 122 may cover the space between the projection 110a except that projection 110a.In this case, can't realize increasing the purpose of catalyst layer 122 surface areas, because catalyst layer 122 has smooth surface.
At least a metal of selecting in the group that catalyst layer 122 can be made of the alloy of Ni, Fe, Co, Pt, Mo, W, Y, Au, Pd and these metals forms.Can use magnetron sputtering system or vapour deposition method to form catalyst layer 122, but the invention is not restricted to this.For example, can form catalyst layer 122 by the transition-metal catalyst of coated powder state on substrate 110.
Next, with reference to (c) of figure 2A, comprising from by N 2Gas, Ar gas, H 2Gas, He gas, Ne gas and NH 3Heat treatment catalyst layer 122 under the gas atmosphere of at least a gas of selecting in the group that gas constitutes.So, on the surface of catalyst layer 122, formed a plurality of catalyst granules 122a, can carbon nano-tube 140 on catalyst granules 122a.But, the present invention is unrestricted, can pass through at Ar, NH 3Or N 2Gas is by after the heat treatment ionization, Ar gas, NH 3Gas or N 2The surface of gas ionic bombardment catalyst layer 122 forms catalyst granules 122a.
With reference to (d) of figure 2A, on projection 110a, re-construct (restructured) catalyst layer 122, to have aforesaid catalyst granules 122a.That is to say, when the surface that forms catalyst layer 122 on the substrate 110 that is formed with a plurality of projection 110a thereon and handle catalyst layer 122 when forming catalyst granules 122a, on the surface of projection 110a, arranged catalyst granules 122a.At this moment, actual gap between the catalyst granules 122a is similar to the gap of conventional flat substrate, but when the gap between substrate 110 tops observation catalyst granules 122a, the horizontal clearance between the catalyst granules 122a is less than the gap in the conventional flat substrate.Therefore, as will be described later, when from the Surface Vertical carbon nano-tube 140 of catalyst granules 122a, the horizontal clearance between the carbon nano-tube 140 is less than the gap between the carbon nano-tube that grows on the conventional flat substrate.Therefore, improve the stand density of carbon nano-tube 140 on the substrate 110, improved fill factor thus.
After forming catalyst granules 122a, with reference to figure 2A (e), carbon nano-tube 140 on catalyst layer 122, more specifically, and carbon nano-tube 140 on the surface of the catalyst layer 122 that comprises catalyst granules 122a.Can use hot CVD method carbon nano-tube 140, but the invention is not restricted to this.That is to say, can use any epontic method carbon nano-tube 140 that can make carbon nano-tube 140, for example the PECVD method from catalyst layer 122.
For example, can be under mixed-gas atmosphere, in temperature is maintained at about 400 to 900 ℃ reative cell (reactor), utilize hot CVD method carbon nano-tube 140, in mist with predetermined ratio of component mixed C O and H 2But, the invention is not restricted to this, can be by in the reative cell (not shown), injecting as CH 4, C 2H 2, C 2H 4, C 2H 6, CO and CO 2At least a carbonaceous gas and H 2Gas, N 2Gas, O 2Gas, H 2One of O steam and Ar gas come carbon nano-tube 140.
With reference to (e) of figure 2A, in the present embodiment, be formed at carbon nano-tube 140 on the substrate 110 than on conventional flat substrate 10, having littler gap shown in Fig. 2 B from catalyst layer 12 carbon nanotubes grown 14.Experimental result finds, has 9 * 10 according to the carbon nano-tube 140 of the embodiment of the invention shown in Fig. 2 A (e) 10Individual/cm 2Density and 25.5% fill factor, and have 3 * 10 according to the carbon nano-tube 14 of the routine techniques shown in Fig. 2 B 10Individual/cm 2Density and 8.5% fill factor.That is to say, be three times of density of conventional carbon nano-tube 14 according to the density of the carbon nano-tube 140 of the embodiment of the invention.But, the invention is not restricted to this,, carbon nano-tube 140 can be grown into greater than 9 * 10 if wish 10Individual/cm 2Density and greater than 25.5% fill factor.
Fig. 3 is the atomic force microscope photo of the catalyst layer that uses the method shown in Fig. 2 A and form on substrate, and Fig. 4 is for using scanning electron microscopy (SEM) photo of the method shown in Fig. 2 A from the catalyst layer surface carbon nanotubes grown.
With reference to figure 3, the catalyst layer 122 that is formed on the substrate 110 has coarse surface.As shown in Figure 4, arrange with high density from the rough surface carbon nanotubes grown 140 of catalyst layer 122.
Fig. 5 A is a vertical cross-section view to 5E, shows use forms the conductor wire of semiconductor device according to the method for the carbon nano-tube of the embodiment of the invention method.
With reference to figure 5A, on substrate 110, form electrode 120.Substrate 110 can be formed by silicon wafer or glass.On the upper surface of electrode 120, form a plurality of projection 120a.The projection 120a that is formed on the electrode 120 can have sphere, cylindricality or pyramid or its combination.But, the invention is not restricted to this, projection 120a can have any shape that can increase the surface area of electrode 120.And projection 120a can form as one with electrode 120 or can be independent of electrode 120 and forms.
Electrode 120 can directly not be formed on the substrate 110.Although not shown, can on substrate 110, form after the predetermined material layer such as insulating barrier, on insulating barrier, form electrode 120.Electrode 120 can be formed by metal with high conductivity or doped silicon.For example, when electrode 120 is formed on the silicon substrate 110 with mos field effect transistor (MOSFET), electrode 120 can be formed by doped silicon, and when electrode was formed on the insulating barrier, electrode 120 can be formed by the metal with high conductivity.
With reference to figure 5B, on the surface that is formed at the electrode 120 on the substrate 110, form catalyst layer 122.The method that forms catalyst layer 122 on electrode 120 is with above identical with reference to the described method of figure 2A, be catalyst layer 122 be to be formed on the electrode 120 rather than on the substrate 110.So, will no longer repeat its detailed description.
Next, with reference to figure 5C, at NH 3The surface of heat treatment catalyst layer 122 under the gas atmosphere is perhaps by using the surface of bombarding the surface etching catalyst layer 122 of catalyst layer 122 such as the ionized gas of Ar.In this way, the surface of catalyst layer 122 is that carbon nano-tube 140 is ready.The method of carbon nano-tube 140 is with identical with reference to the described method of figure 2A.So, will no longer repeat its detailed description.
With reference to figure 5D, form the insulating barrier 130 that covers substrate 110, electrode 120 and catalyst layer 122, and form through hole (via hole) 132 by etching isolation layer 130.
With reference to figure 5D, insulating barrier 130 is formed thereon to be formed with on the surface of electrode 120 of catalyst layer 122.At this moment, insulating barrier 130 is covering catalyst layer 122 not only, also covers the upper surface of substrate 110 and the side surface of electrode 120.Insulating barrier 130 can be by such as silica (SiO 2) oxide form.
Next, the through hole 132 of the part on the surface of formation exposed catalyst layer 122 in insulating barrier 130.More specifically, on insulating barrier 130, after the painting photoresist, photoresist is patterned into predetermined pattern.Next, the photoresist behind the use composition forms through hole 132 as mask by anisotropic etching insulating barrier 130.
With reference to figure 5E, in through hole 132 on electrode 120 from catalyst layer 122 carbon nano-tubes 140.
Can use hot CVD method, PECVD method or additive method carbon nano-tube 140 commonly known in the art.From the method for catalyst layer 122 carbon nano-tubes 140 with identical with reference to the described method of figure 2A.
Described as (e) with reference to figure 2A, in through hole 132 from having littler gap than catalyst layer 12 carbon nanotubes grown 14 on conventional flat substrate 10 shown in Fig. 2 B between the epontic carbon nano-tube 140 of catalyst layer 122.That is to say to have the density higher than carbon nanotubes grown in the prior art 14 according to the carbon nano-tube 140 of the embodiment of the invention.
Although it is not shown in the accompanying drawings, if on insulating barrier 130, form electrode or the memory film (not shown) that is connected to carbon nano-tube 140, carbon nano-tube 140 is just being served as the conductor wire such as contact or interconnection so, and conductor wire connects two electrodes or electrode and memory film.In this case, be formed at carbon nanotube conducting line in the through hole 132 owing to its high density has low-down resistance, thereby can realize significantly improving of current density.
And when carbon nano-tube 140 was used as the conductor wire of semiconductor device, the carbon nanotube conducting line can have the diameter of several nm to tens nm.Therefore, it is the micro-through-holes of several nm to tens nm that the carbon nanotube conducting line can be applied to diameter, makes the integrated possibility that becomes of hypervelocity of semiconductor device thus.
The invention provides a kind of method of carbon nano-tube, can improve the density of carbon nano-tube by this method.
The present invention also provides a kind of method that forms the carbon nanotube conducting line of semiconductor device, and this conductor wire has low resistance and high current density.
The present invention also provides a kind of method that forms the carbon nanotube conducting line of semiconductor device, can realize that by this method the hypervelocity of semiconductor device is integrated, because the carbon nanotube conducting line can be applied to micro-through-hole.
Although specifically showed and described the present invention with reference to its one exemplary embodiment, but those of ordinary skill in the art should be appreciated that and can make the change of various ways and details therein and do not deviate from the spirit and scope of the present invention that limit as claim.

Claims (23)

1. the method for a carbon nano-tube comprises:
The substrate that preparation has a plurality of projections;
Form catalyst layer, described catalyst layer covers described projection and promotes the growth of described carbon nano-tube; And
By the described carbon nano-tube of growth on the surface of injection carbonaceous gas at described catalyst layer on the described catalyst layer.
2. the method for claim 1, also comprise: on described catalyst layer that forms the described projection of covering and described surface, grow between the described carbon nano-tube, form catalyst granules by the described surface of handling described catalyst layer at described catalyst layer.
3. method as claimed in claim 2, the formation of the described catalyst granules of wherein said catalyst layer comprises: from by N 2Gas, Ar gas, H 2Gas, He gas, Ne gas and NH 3The described surface of the described catalyst layer of heat treatment under the atmosphere of at least a gas of selecting in the group that gas constitutes.
4. method as claimed in claim 2, the formation of the described catalyst granules of wherein said catalyst layer comprises: with Ionized Ar, NH 3Or N 2Gas bombards the described surface of described catalyst layer.
5. the method for claim 1, the described projection of wherein said substrate is sphere, cylindricality, pyramid or its combination.
6. the method for claim 1 wherein uses hot CVD method or PECVD method to form described carbon nano-tube.
7. the method for claim 1, wherein said catalyst layer is formed up to predetermined thickness, makes the described surface of described catalyst layer have identical or similar shape with described projection.
8. at least a metal of selecting the group that the method for claim 1, wherein said catalyst layer are made of the alloy from Ni, Fe, Co, Pt, Mo, W, Y, Au, Pd and these metals forms.
9. the method for claim 1 wherein uses magnetron sputtering system or vapour deposition method to form described catalyst layer.
10. the method for claim 1, the growth of wherein said carbon nano-tube is to carry out under 400 to 900 ℃ temperature.
11. the method for claim 1, wherein at the growing period of described carbon nano-tube, described carbonaceous gas comprises from by CH 4, C 2H 2, C 2H 4, C 2H 6, CO and CO 2At least a gas of selecting in the group that constitutes, and described carbonaceous gas with from by H 2Gas, N 2Gas, O 2Gas, H 2The gas of selecting in the group that O steam and Ar gas constitute injects reative cell together.
12. a method that forms the conductor wire of semiconductor device, it comprises:
The preparation substrate;
On described substrate, form electrode with a plurality of projections;
Form catalyst layer on described electrode, described catalyst layer covers described projection and promotes the growth of described carbon nano-tube;
Form the insulating barrier that covers described catalyst layer;
Form through hole in described insulating barrier, described through hole exposes the part on the surface of described catalyst layer; And
In described through hole, inject carbonaceous gas by described surface at described catalyst layer, carbon nano-tube on the described surface of described catalyst layer, thus form conductor wire.
13. method as claimed in claim 12 also comprises:, form catalyst granules by the described surface of handling described catalyst layer forming the described catalyst layer that covers described projection and forming between the described insulating barrier that covers described catalyst layer.
14. method as claimed in claim 13, the catalyst granules that wherein forms described catalyst layer are included in from by N 2Gas, Ar gas, H 2Gas, He gas, Ne gas and NH 3The described surface of the described catalyst layer of heat treatment under the atmosphere of at least a gas of selecting in the group that gas constitutes.
15. method as claimed in claim 13, the described catalyst granules that wherein forms described catalyst layer comprises: with Ionized Ar gas, NH 3Gas or N 2Gas bombards the described surface of described catalyst layer.
16. method as claimed in claim 12, the described projection of wherein said electrode are sphere, cylindricality, pyramid or its combination.
17. method as claimed in claim 12 wherein uses hot CVD method or PECVD method to form described carbon nano-tube.
18. method as claimed in claim 12, wherein said catalyst layer is formed up to predetermined thickness, makes the described surface of described catalyst layer have identical or similar shape with described projection.
19. at least a metal of selecting the group that method as claimed in claim 12, wherein said catalyst layer are made of the alloy from Ni, Fe, Co, Pt, Mo, W, Y, Au, Pd and these metals forms.
20. method as claimed in claim 12 wherein uses magnetron sputtering system or vapour deposition method to form described catalyst layer.
21. method as claimed in claim 12, wherein said insulating barrier is formed by oxide.
22. method as claimed in claim 12, the formation of wherein said conductor wire are to carry out under 400 to 900 ℃ temperature.
23. method as claimed in claim 12, wherein during the formation of described conductor wire, described carbonaceous gas comprises from by CH 4, C 2H 2, C 2H 4, C 2H 6, CO and CO 2At least a gas of selecting in the group that constitutes, and described carbonaceous gas with from by H 2Gas, N 2Gas, O 2Gas, H 2The gas of selecting in the group that O steam and Ar gas constitute injects reative cell together.
CNA2006101536967A 2005-12-27 2006-09-14 Carbon nano-tube generating method and method for forming electric wire of semiconductor device Pending CN1992198A (en)

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KR20050130611 2005-12-27
KR130611/05 2005-12-27
KR23518/06 2006-03-14

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CN1992198A true CN1992198A (en) 2007-07-04

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