CN1990807A - Non-conducting adhesion material composition - Google Patents
Non-conducting adhesion material composition Download PDFInfo
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- CN1990807A CN1990807A CN 200510137453 CN200510137453A CN1990807A CN 1990807 A CN1990807 A CN 1990807A CN 200510137453 CN200510137453 CN 200510137453 CN 200510137453 A CN200510137453 A CN 200510137453A CN 1990807 A CN1990807 A CN 1990807A
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Abstract
The invention relates to a non-conducting focal adhesion material, comprising following components: (a) at least one epoxy resin of non siloxane epoxy resin, and the epoxy equivalent weight is larger than 150 g/ e and smaller than 3000 g/ e; (b) siloxane epoxy resin, with the content being 10- 30 wt% of that of (a), and the epoxy equivalent weight is between 250- 1500 g/ e; (c) imidazole or sclerosing agent of its derivative, with its content being 5- 15 wt% of the total weight of (a) and (b); (d) phenol compound catalyst, with the content being 1- 8 wt% of that of (a) and (b); (e) toughening agent, with the content being 5- 16 wt% of that of (a) and (b); and (f) organic solvent, with the content being 25- 55 wt5 of the total weight of (a) (b) (c) (d) and (e).
Description
Technical field
The present invention relates to a kind of constituent, and be particularly related to a kind of non-conducting adhesion material composition.
Background technology
Along with the arriving of digital times and popularizing of Internetization, the Application Areas of flat-panel screens more expands to the ultra-large type Video Applications from the large-scale panel that the middle-size and small-size product information of marching toward of portable is used, makes flat-panel screens formally enter omnibearing application category.Liquid-crystal display must connect the driving chip as the control purposes that shows signal at its periphery except liquid crystal panel.The major function of drive IC be the output required voltage to the reverse degree of pixel with the control liquid crystal molecule, source electrode drive circuit (IC) is the input of processing data and the grid drive IC is the torsional amplitude and the speed of control liquid crystal molecule.The crystal covered package technology of panel of LCD drive IC is different from and engages juncture with Solder Bumps (the Solder Bumps chip bonding mainly is to reach the metal eutectic through the high temperature reflow to engage, insert bottom filling glue material (underfiller) again), but reach electrical conducting in golden projection hot press mode.Though but golden projection hot pressing chip bonding mode has the advantage than tinsel thin spaceization (fine pitch), also because the fusing point of golden projection is relative and the Solder Bumps height much can't use tradition (tin lead) reflow process.Therefore Hitachi Chemical (United States Patent (USP) the 4731282nd) develops and utilizes anisotropic conductive rubber film material (ACF) and IC and substrate to carry out the electrical permanent stability that hot pressing that the internal electrical of finishing crystal covered package is communicated with and reached crystal covered package by the adhesion of anisotropic conductive rubber film simultaneously.This material technology mainly is that particle diameter is evenly distributed in the resin material at the conductive powder body of 1～10 μ m addition with 0.1～10vol.%, utilizes thermal processing method to make the form of film product again.When crystal covered package uses, after earlier anisotropic conductive rubber film (ACF) being fitted between the projection of IC and the base plate line, impose again suitable pressure, temperature and time make the anisotropic conductive material begin mobile simultaneously conductive powder body then with projection and base plate line (as: metallic gasket) thus contact the effect that conducts that reaches; Also because thereby anisotropic conductive rubber film is to select for use suitable conductive powder body particle diameter and addition to make it can't contact the not laterally conducting requirement of reaching the anisotropy on state characteristic of maintenance each other between projection and projection.
Anisotropic conductive rubber film mainly is to utilize the metallic gasket of the golden projection of its contained conductive powder body and flat-panel screens drive IC and substrate to contact and the function that reaches circuit turn-on.So the anisotropic conductive rubber film material has its unsurmountable application limitations:
(1) conductive powder body uses restriction
Increase relatively along with the crystal covered package pin count that the size of projection and pad just more and more carefully narrows.Under the situation that contact area is dwindled, in order to be maintained the particle diameter that enough conducting electric weight just must add conductive powder body more or increase powder; But conflictingly therewith be: improve the content of conductive powder body or adopt the conductive powder body of big particle diameter can significantly improve the probability of short circuit between structure wiring road.
In order to improve this problem, existing considerable anisotropic conductive technology is suggested, thereby is for No. 5120665 to utilize covering undersized insulation powder on the conductive powder body surface and intercept conductive powder body and contact with each other and improve the electrical anisotropy of material as United States Patent (USP); Short circuit probability when the principle reduction anisotropy that United States Patent (USP) repels each other with the magnetic conductive powder same sex for No. 6110399 is led the use of amber glued membrane; United States Patent (USP) is for No. 6020059 that bilayer or the three-layer thin-film structure of making tool insulation layer and conductive layer are improved the anisotropy conductive characteristic of anisotropic conductive rubber film at higher pin count crystal covered package, but still is can't satisfy more high pin to count crystal covered package internal communication demand.Engaging structure dress (COG structure dress) with ambetti is example, and commercially available anisotropic conductive product use restriction approximately about line-spacing 38 μ m, is loaded onto and can be produced because of the conductive powder body quantity not sufficient between projection causes electrical Problem of Failure at more highdensity COG structure.
(2) stress causes the delamination of structure dress
Because thermal expansivity, the mechanical characteristics of each element of crystal covered package all have sizable difference, normally the thermal expansivity of ACF is higher than circuit chip (IC Chip) and substrate.Analyze from the idea of stress, such material behavior difference can produce thermal stresses after carrying out hot pressing structure process of assembling with 250 ℃-300 ℃ high temperature residual, and its most tangible influence is a product generation warping phenomenon (Warpage) after the structure dress technology.Along with crystal covered package more and more long and narrowization, high pin number, such warping phenomenon is just serious even can be at thereafter environmental testing or the problem of structure dress interface delamination takes place when using for a long time.A lot of discovers, if it is stress-retained will to have anisotropic conductive rubber film structure dress technological temperature reduction can effectively minimizing structure dress process heat now; And reduction crystal covered package internal communication also can significantly improve the electrical reliability performance of structure dress integral body with the water-intake rate of sticky material.But present existing anisotropic conductive rubber film material technology still has processing temperature and the too high problem of water-intake rate to need to improve.
(3) anisotropic conductive rubber film product cost height
Because conductive powder body, dispersion and the complete processing of the special processing of anisotropic conductive rubber film material require, therefore the cost of its product can be in any more, its development trend with present consumption electronic products multifunction, low price is inconsistent, so that influence the growth rate of overall market.
Summary of the invention
Purpose of the present invention just provides a kind of non-conducting adhesion material composition, and it can be applied in the high structure dress conducting circuit and avoid short circuit between circuit.
A further object of the present invention provides a kind of non-conducting adhesion material composition, and it can reduce process heat when structure is adorned stress-retained, reduces water-absorbent, and improves the whole electrical reliability of structure dress.
Another purpose of the present invention provides a kind of non-conducting adhesion material composition, and it can be applied in the high structure wiring road, reduces the cost of product.
The present invention proposes a kind of film type non-conducting adhesion material composition, and it comprises the Resins, epoxy of (a) at least a non-silicone Resins, epoxy, and its epoxy equivalent (weight) weight is greater than 150 gram/equivalents and less than 3000 gram/equivalents; (b) silicone epoxy resin, its content are 10～30wt% of (a) weight, and epoxy equivalent (weight) weight between 250 gram/equivalents to 1500 restrain/equivalent between; (c) stiffening agent of imidazoles (imidazole) or derivatives thereof, its content be (a) with (b) weight and 5～15wt%; (d) phenolic compound catalyzer, its content be (a) with (b) weight and 1～8wt%; (e) toughner, content be (a) with (b) weight and 5～16wt%; And (f) organic solvent, its content is (a) and (b), (c), (d) and (e) 25～55wt% of weight summation.
Described according to the embodiment of the invention, the average epoxy functionalized radix of the Resins, epoxy of above-mentioned (a) non-silicone Resins, epoxy can be aromatic epoxy resin or aliphatic epoxy resin greater than 2.0.Aromatic epoxy resin comprises Synthesis of Oligo Ethylene Glycol, the Synthesis of Oligo Ethylene Glycol of Bisphenol F, the Synthesis of Oligo Ethylene Glycol of bis-phenol E, the Synthesis of Oligo Ethylene Glycol of bisphenol S, the Synthesis of Oligo Ethylene Glycol of naphthalene, the formaldehyde-toluene-epoxide of dihydroxyphenyl propane.Aliphatic epoxy resin comprises the aliphatic epoxide of cycloaliphatic epoxides, 20 to 30 carbon.
Described according to the embodiment of the invention, above-mentioned (b) silicone epoxy resin comprises:
R wherein
1And R
2Represent hydrogen, the alkyl of 1 to 6 carbon, aromatic base, epoxy group(ing), hydroxyl or acrylate-based respectively; N represents 1～6; X represents 0～19; Y represents 0～30.
Described according to the embodiment of the invention, the stiffening agent of above-mentioned (c) imidazoles or derivatives thereof is a fusing point between 110 ℃～280 ℃ imidazolium compounds or derivatives thereof, comprising:
Wherein, R
1Alkyl for hydrogen atom or 1 to 4 carbon; R
2It is the alkyl or phenyl of 1 to 4 carbon; R
3For-C
nH
2n-CN, wherein n=1～3; R
5It is the alkyl of 1 to 4 carbon; R
7For hydrogen atom or-CH
2-OH.
Described according to the embodiment of the invention, the OH content of above-mentioned (d) phenolate thing catalyzer is not higher than 400 gram/equivalents, and it comprises both-end phenol hydroxy compound or multiterminal phenol hydroxy compound.
When the present invention's material composite is applied in crystal covered package, can be so that circuit turn-on structure tight joint, and, so since in the constituent the not outer conductive powder body that adds can not produce between circuit and not cause problem of short-circuit because of contacting with conductive powder body.In addition, compare with the anisotropic conductive rubber film crystal covered package, the present invention's constituent can adopt lower technological temperature to finish internal communication technology, so can improve structure dress reliability of products, and can reduce the cost of high-density crystal covered package internal communication.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly is described in detail below.
Embodiment
The present invention's film type non-conducting adhesion material composition comprises that Resins, epoxy, (b) silicone epoxy resin, the stiffening agent of (c) imidazoles or derivatives thereof, (d) phenolic compound catalyzer, (e) toughner of (a) non-silicone Resins, epoxy reaches (f) organic solvent.
The epoxy equivalent (weight) weight of the Resins, epoxy of it (a) at least a non-silicone Resins, epoxy of the present invention is greater than 150 gram/equivalents and less than 3000 gram/equivalents.When epoxy equivalent (weight) weight during less than the 150g/ equivalent, can't film forming; When epoxy equivalent (weight) weight during greater than the 3000g/ equivalent, its reactivity will reduce.(a) the average epoxy functionalized radix of Resins, epoxy is greater than 2.0, and it can be aromatic epoxy resin or aliphatic epoxy resin.The example of aromatic epoxy resin comprises Synthesis of Oligo Ethylene Glycol (diglycidyl ether ofnaphthalene), formaldehyde-toluene-epoxide (formaldehyde-cresol-epoxy) of Synthesis of Oligo Ethylene Glycol, the naphthalene of Synthesis of Oligo Ethylene Glycol, the bisphenol S of Synthesis of Oligo Ethylene Glycol, the bis-phenol E of Synthesis of Oligo Ethylene Glycol (diglycidyl etherofbisphenol A), the Bisphenol F of dihydroxyphenyl propane etc.The example of aliphatic epoxy resin comprises the aliphatic epoxide (aliphaticepoxy) of cycloaliphatic epoxides (cycloaliphatic epoxy), 20 to 30 carbon etc.
(b) content of silicone epoxy resin is 10～30wt% of (a) Resins, epoxy, and epoxy equivalent (weight) weight between 250 gram/equivalents to 1500 restrain/equivalent between.When the epoxy equivalent (weight) weight of (b) silicone epoxy resin is less than 10wt% less than 250g/ equivalent or addition, material hydrophobicity and absorption of stress are improved the effect deficiency; When the epoxy equivalent (weight) weight of (b) silicone epoxy resin during greater than 30wt%, will cause the adverse effect of the transitivity decline that is separated greater than 1500g/ equivalent or addition.(b) the silicone epoxy resin example comprise:
R wherein
1And R
2Represent hydrogen, the alkyl of 1 to 6 carbon, aromatic base, epoxy group(ing), hydroxyl or acrylate-based respectively; N represents 1～6; X represents 0～19; Y represents 0～30.
(c) stiffening agent of imidazoles or derivatives thereof, its content be the Resins, epoxy of (a) non-silicone Resins, epoxy and (b) the silicone epoxy weight resin and 5～15wt%.When addition is less than 5wt%, reactive not enough; When addition during more than 15wt%, reaction can be too urgent strong, and wayward reaction.The stiffening agent of imidazoles or derivatives thereof is with Powdered preferable, and its fusing point is between 110 ℃ to 280 ℃, and the example comprises:
Wherein, R
1Alkyl for hydrogen atom or 1 to 4 carbon; R
2It is the alkyl or phenyl of 1 to 4 carbon; R
3For-C
nH
2n-CN, wherein n=1～3; R
5It is the alkyl of 1 to 4 carbon; R
7For hydrogen atom or-CH
2-OH.
(d) phenolic compound catalyzer, its content be (a) Resins, epoxy and (b) the silicone epoxy weight resin and 1～8wt%, and OH content is not higher than 400 gram/equivalents.Do not add (d) phenolic compound catalyzer or surpass 8wt%, will not have catalytic effect.(d) example of phenolic compound catalyzer comprises two (many) ends phenol hydroxy compound (phenolic hydroxyl terminated compound), as dihydric phenol (dihydroxyl phenol), diphenol (biphenol), bisphenols (bisphenol), alkanisation bis-phenol (alkylatedbisphenol), triphenol (triphenol), resol (phenol-aldehyde resin), novolac resin (phenol-aldehyde novolac resin) etc.
(e) content of toughner be (a) Resins, epoxy and (b) the silicone epoxy weight resin and 5～16wt%.When the addition of toughner was less than 5wt%, the flexibility deficiency of system can't the film forming rolling; When adding, then can reduce material behavior more than 16wt%.(e) example of toughner comprises nbr carboxyl terminal (carboxyl-terminal-butadiene-acrylonitrile rubber), paracril (butadiene acrylonitrile rubber), silicone elastomer (silicone elastomer), urethanes (Polyurethane rubber).
(f) content of organic solvent is the stiffening agent, (d) phenolic compound catalyzer of (a) Resins, epoxy, (b) silicone epoxy resin, (c) imidazoles or derivatives thereof and (e) 25～55wt% of toughner weight sum total.When the content of organic solvent was less than 25wt%, system has did not dissolve and the problem of the too high difficult processing of viscosity; When the content of organic solvent more than 55wt%, then have the too much problem of coating back dissolvent residual.(f) example of organic solvent comprises ketone, ester class, alcohols, benzene class etc.
The present invention's constituent can be coated on it on base material when using, and again by suitable baking, for example its reacting initial temperature is not less than 110 ℃, and the reaction terminating temperature is not higher than 165 ℃, with solvent evaporation, promptly can be made into the non-conductive adhering layer of film type.
The present invention's example and comparative example are as described below.Employed composition is as shown in table 1 in example 1 to 12 and the comparative example:
Table 1
Example 1
The Resins, epoxy that table 2 is listed (a) and (b) and organic solvent pour in regular turn in 1 liter the glass reactor, be stirred to dissolving fully at normal temperatures, afterwards, add catalyzer (S-1508) and be stirred to dissolving fully.Then, open reactor cap, add toughner (Nippol-1072), afterwards, the off-response device also is stirred to dissolving fully., slowly add Powdered stiffening agent, again under the temperature of 15 to 20 degree Celsius, with the stirring velocity short mix of 2000rpm 2 hours thereafter.The content of each composition is as shown in table 3 in the constituent.
Next, under the temperature of 15 to 20 degree Celsius, utilize three cylinders, disperse 3 times with the condition in 250rpm/30 μ m gap.The constituent that dispersion is finished, utilize the long accurate coating machine of 6m, with the coating conditions of 100 ℃/130 ℃/130 ℃ and 1.2m/min., on thick polyethylene terephthalate (PET) base material of 50 μ m, make the crystal covered package internal communication film type non-conducting adhesion material that 16 μ m are thick and 50m is long.
Afterwards, test, the project of test comprises film-forming properties test, in setting times (Gel time) test of 150 degree Celsius, in the setting times test of 180 degree Celsius, strength test and rate of moisture absorption test in stabilitys in storage test, the structure attachings of-5 degree Celsius.Its result is as shown in table 3.
Example 2 is to example 12
Prepare constituent in the mode that is same as example 1, but each becomes the kind and the content of branch as shown in table 2.Afterwards, the mode that is same as example 1 is made the film type non-conducting adhesion material, and tests, and its result is as shown in table 3.
Comparative example 1
Prepare constituent in the mode that is same as example 1, still do not add 2MA-OK and DRUITESD -1508 addition and change 96 grams into.Afterwards, make the film type non-conducting adhesion material in the mode that is same as example 1, and test, its result is as shown in table 3.
Comparative example 2
Prepare constituent in the mode that is same as example 1, but do not add DRUITE SD -1508.Afterwards, make the film type non-conducting adhesion material in the mode that is same as example 1, and test, its result is as shown in table 3.
Comparative example 3
Prepare constituent in the mode that is same as example 1, but do not add toughner 1072.Afterwards, make the film type non-conducting adhesion material in the mode that is same as example 1, and test, its result is as shown in table 3.
Comparative example 4
Prepare constituent in the mode that is same as example 1, but 2MA-OK changes 2.8 grams into and SD-1508 changes 96 grams into.Afterwards, make the film type non-conducting adhesion material in the mode that is same as example 1, and test, its result is as shown in table 3.
Comparative example 5
Prepare constituent in the mode that is same as example 1, but do not add GT-1000.Afterwards, make the film type non-conducting adhesion material in the mode that is same as example 1, and test, its result is as shown in table 3.
Show that by the result of table 3 the coating finished surface does not have defective such as holes and 5cm radius rolling material does not rupture, meet the requirement of structure package material processing characteristics fully.
At example 1, comparative example 5 and commercially available ACF, relatively its structure attaching the intensity ring and is surveyed stability, and its result is as shown in table 4.In addition, at example 1 and commercially available ACF, relatively its structure dress fine rule electrically reaches reliability apart from (pitch=28 μ m), and its result is as shown in table 5.When showing that by the result of table 4 and 5 the present invention's constituent is applied to semi-conductor packaging, can guarantee the then intensity and the electrical reliability of product.
Table 2
| Composition (weight: gram) | Composition | Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | Example 6 | Example 7 | Example 8 | Example 9 |
| Resins, epoxy (a) | EPON-828 | 98.9 | 98.9 | 98.9 | 98.9 | 98.9 | 98.9 | 98.9 | 98.9 | 98.9 |
| ECN-1299 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | |
| Epikote-1009 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | |
| Silicone epoxy resin (b) | GT-1000 | 34 | 34 | 34 | 34 | 34 | 34 | 34 | 68 | 34 |
| Imidazoles stiffening agent (c) | 2MA-OK | 28.3 | 42.5 | 14.2 | 28.3 | 28.3 | 28.3 | 28.3 | ||
| 2MZ-A | 28.3 | |||||||||
| The 2-phenylimidazole | 28.3 | |||||||||
| Fragrance phenolic compound (d) | DRUITE SD -1508 | 8.2 | 8.2 | 8.2 | 22.6 | 4.1 | 8.2 | 8.2 | 8.2 | 8.2 |
| Solid type toughner (e) | Nippol-1072 | 32.7 | 32.7 | 32.7 | 32.7 | 32.7 | 32.7 | 32.7 | 32.7 | 32.7 |
| Organic solvent (f) | PMA | 352.2 | 352.2 | 352.2 | 352.2 | 352.2 | 352.2 | 151 | 352.2 | 352. 2 |
Table 2 is continuous
| Composition (weight in grams) | Composition | Example 10 | Example 11 | Example 12 | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 |
| Resins, epoxy (a) | EPON-828 | 98.9 | 98.9 | 98.9 | 96 | 98.9 | 98.9 | 98.9 | 98.9 |
| ECN-1299 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | 85.2 | |
| Epikote-1009 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | 64.9 | |
| Silicone epoxy resin (b) | GT-1000 | 34 | 34 | 34 | 34 | 34 | 34 | 34 | |
| Imidazoles stiffening agent (c) | 2MA-OK | 28.3 | 28.3 | 28.3 | 28.3 | 28.3 | 2.8 | 28.3 | |
| 2MZ-A | |||||||||
| The 2-phenylimidazole | |||||||||
| Fragrance phenolic compound (d) | DRUITE SD -1508 | 8.2 | 8.2 | 8.2 | 8.2 | 8.2 | 96 | 8.2 | |
| Solid type toughner (e) | Nippol-1072 | 16 | 45 | 32.7 | 32.7 | 32.7 | 32.7 | 32.7 | |
| Organic solvent (f) | PMA | 352.2 | 352.2 | 352.2 | 352.2 | 352.2 | 352.2 | 352.2 | 352.2 |
Table 3
| Composition (wt%) | Composition | Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | Example 6 | Example 7 | Example 8 | Example 9 | Example 10 | Example 11 | Example 12 |
| Resins, epoxy (a) | EPON-828 ECN-1299 Epikote-1009 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| Silicone epoxy resin (b) | GT-1000 | 13.7 | 13.7 | 13.7 | 13.7 | 13.7 | 13.7 | 13.7 | 27.3 | 13.7 | 13.7 | 13.7 | 13.7 |
| Imidazoles stiffening agent (c) | 2MA-OK | 10.0 | 15.0 | 5.0 | 10.0 | 10.0 | 8.9 | 10.0 | 10.0 | 10.0 | 10.0 | ||
| 2MZ-A | 10.0 | ||||||||||||
| The 2-phenylimidazole | 10.0 | ||||||||||||
| Fragrance phenolic compound (d) | DRUITE SD -1508 | 2.9 | 2.9 | 2.9 | 8.0 | 1.4 | 2.9 | 2.9 | 2.6 | 2.9 | 2.9 | 2.9 | 2.9 |
| Solid type toughner (e) | Nippol-1072 | 11.6 | 11.6 | 11.6 | 11.6 | 11.6 | 11.6 | 11.6 | 10.3 | 11.6 | 5.7 | 15.9 | 11.6 |
| Organic solvent (f) | PMA | 50.0 | 49.0 | 51.0 | 49.0 | 50.3 | 50 | 30 | 47.7 | 50.0 | 51.2 | 49.1 | 50.0 |
(b)wt％＝(b)/(a)×100
(c)wt％＝(c)/[(a)+(b)]×100
(d)wt％＝(d)/[(a)+(b)]×100
(e)wt％＝(e)/[(a)+(b)]×100
(f)wt％＝(f)/[(a)+(b)+(c)+(d)+(e)]×100
Table 3
| Film-forming properties | 150 ℃ of setting times (second) | Setting time (@180 ℃ of second) | Stability in storage (5 ℃) | Intensity (MPa) in the structure attaching | Rate of moisture absorption (wt%) | |
| Example 1 | ◎ | 14 | 7 | 14 months | 27.5 | 0.6 |
| Example 2 | ◎ | 11 | 5 | 14 months | 25.3 | 0.74 |
| Example 3 | ◎ | 25 | 13 | 14 months | 29.4 | 0.6 |
| Example 4 | ◎ | 12 | 9 | 14 months | 27.5 | 0.71 |
| Example 5 | ◎ | 14 | 6 | 14 months | 28.8 | 0.77 |
| Example 6 | ◎ | 10 | 7 | 14 months | 26.6 | 0.67 |
| Example 7 | ◎ | 8 | 8 | 12 months | 25.5 | 0.8 |
| Example 8 | ◎ | 13 | 10 | 14 months | 24.0 | 0.48 |
| Example 9 | ◎ | 16 | 8 | 14 months | 26.6 | 0.53 |
| Example 10 | ○ | 14 | 8 | 14 months | 21.7 | 0.72 |
| Example 11 | × | 13 | 9 | 14 months | 32.4 | 0.89 |
| Example 12 | ○ | 12 | 9 | 14 months | 23.3 | 0.78 |
| Comparative example 1 | ◎ | Greater than 3600 | Greater than 1000 | - | - | 0.82 |
| Comparative example 2 | ◎ | 35 | 22 | 18 months | - | 0.74 |
| Comparative example 3 | × | 11 | 8 | 12 months | - | - |
| Comparative example 4 | ◎ | Greater than 120 | 40 | 6 months | 7 | 0.88 |
| Comparative example 5 | ◎ | 12 | 8 | 14 months | 21.4 | 2.8 |
◎: good zero: can *: poor
Setting time test (Gel time): the 200mg sample is positioned over 150 ℃/180 ℃ last samples of heat dish can the mobile time promptly be defined as setting time.
Stability in storage: changing less than 10 seconds with 150 ℃ of setting times is standard.
Strength test in the structure attaching: with 160 ℃/10 seconds/15MPa thin-film material is bonded between .dummy IC (4mm2) and IT0 base material, adorns sample burst thrust with the thrust machine with 2cm/min. rate test structure again.
Rate of moisture absorption: 100 * 100mm
2Complete 100 ℃/1 hour material weight increment rate of hardened material.
Table 4
| Test condition | Example 1 | Comparative example 5 | Commercially available ACF |
| Hot and humid 0 hour | 27.5MPa | 22.3MPa | 24.3MPa |
| Hot and humid 100 hours | 29.4MPa | 11.4MPa | 26.4MPa |
| Hot and humid 500 hours | 28.6MPa | Delamination | 20.4MPa |
| Hot and humid 800 hours | 29.5MPa | Delamination | 16.4MPa |
| Hot and humid 1000 hours | 26.9MPa | Delamination | 15.3MPa |
| 150 ℃ of high-temperature storage 100 hours | 30.1MPa | 5.4MPa | 20.5MPa |
| 150 ℃ of high-temperature storage 500 hours | 27.9MPa | Delamination | 12.3MPa |
| 150 ℃ of high-temperature storage 800 hours | 26.9MPa | Delamination | 11.9MPa |
| 150 ℃ of high-temperature storage 1000 hours | 26.8MPa | Delamination | 11.8MPa |
Structure dress condition 160 ℃/10 seconds; Pressure force: 50g/bump
Hot and humid condition is 85 ℃ of 85R.H.%
Table 5
| Test condition | Example 1 | |
| Average conducting resistance (Ω)/200 contact | Average conducting resistance (Ω)/600 contact | |
| Test initial | 5.5 | 8.4 |
| Hot and humid 100 hours | 5.6 | 8.9 |
| Hot and humid 500 hours | 5.9 | 9.2 |
| Hot and humid 800 hours | 6.1 | 9.1 |
| Hot and humid 1000 hours | 6.3 | 9.3 |
| Commercially available ACF | ||
| Test initial | Circuit malfunction | Circuit malfunction |
Structure dress condition 160 ℃/10 seconds; Pressure force: 50 gram/projections
Hot and humid condition is 85 ℃ of 85R.H.%
Comprehensive the above, because it mainly is response characteristic (as: adding proportion of resin reaction, stiffening agent kind, stiffening agent and catalyzer etc.) and the molecular weight (as resin, stiffening agent, catalyzer and toughner molecular weight and their adding proportion etc.) that control is formed that the present invention's material is formed, therefore when crystal covered package, can be so that circuit turn-on structure tight joint, thus simultaneously also since in the material composite the not outer conductive powder body that adds can not produce between circuit and not cause problem of short-circuit because of contacting with conductive powder body.In addition, because the reactivity of the present invention's material composite, hydrophobicity and absorption of stress have particular design, thus can adopt the technological temperature lower to finish internal communication technology than the anisotropic conductive rubber film crystal covered package, thus structure dress reliability of products improved.And the design of such material composition, can also satisfy low-cost high-density crystal covered package internal communication demand.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection domain is as the criterion when looking the claim person of defining.
Claims (10)
1. non-conducting adhesion material composition is characterized in that comprising:
(a) Resins, epoxy of at least a non-silicone Resins, epoxy, its epoxy equivalent (weight) weight is greater than 150 gram/equivalents and less than 3000 gram/equivalents;
(b) silicone epoxy resin, its content are 10～30wt% of (a) weight, and epoxy equivalent (weight) weight between 250 gram/equivalents to 1500 restrain/equivalent between;
(c) stiffening agent of imidazoles or derivatives thereof, its content be (a) with (b) weight and 5～15wt%;
(d) phenolic compound catalyzer, its content be (a) with (b) weight and 1～8wt%;
(e) toughner, content be (a) with (b) weight and 5～16wt%; And
(f) organic solvent, its content are (a) and (b), (c), (d) and (e) 25～55wt% of weight summation.
2. the non-conducting adhesion material composition according to claim 1, the average epoxy functionalized radix of Resins, epoxy that it is characterized in that this (a) non-silicone Resins, epoxy is greater than 2.0.
3. the non-conducting adhesion material composition according to claim 1, the Resins, epoxy that is somebody's turn to do (a) non-silicone Resins, epoxy is aromatic epoxy resin or aliphatic epoxy resin.
4. the non-conducting adhesion material composition according to claim 3 is characterized in that this aromatic epoxy resin comprises Synthesis of Oligo Ethylene Glycol, the Synthesis of Oligo Ethylene Glycol of Bisphenol F, the Synthesis of Oligo Ethylene Glycol of bis-phenol E, the Synthesis of Oligo Ethylene Glycol of bisphenol S, the Synthesis of Oligo Ethylene Glycol of naphthalene, the formaldehyde-toluene-epoxide of dihydroxyphenyl propane.
5. the non-conducting adhesion material composition according to claim 3 is characterized in that this aliphatic epoxy resin comprises the aliphatic epoxide of cycloaliphatic epoxides, 20 to 30 carbon.
6. the non-conducting adhesion material composition according to claim 1 is characterized in that this (b) silicone epoxy resin comprises:
R wherein
1And R
2Represent hydrogen, the alkyl of 1 to 6 carbon, aromatic base, epoxy group(ing), hydroxyl or acrylate-based respectively; N represents 1～6; X represents 0～19; Y represents 0～30.
7. the non-conducting adhesion material composition according to claim 1, the stiffening agent that it is characterized in that this (c) imidazoles or derivatives thereof are fusing points between 110 ℃～280 ℃ imidazolium compounds or derivatives thereof.
8. the non-conducting adhesion material composition according to claim 7 is characterized in that the stiffening agent of this (c) imidazoles or derivatives thereof comprises:
Wherein, R
1Alkyl for hydrogen atom or 1 to 4 carbon; R
2It is the alkyl or phenyl of 1 to 4 carbon; R
3For-C
nH
2n-CN, wherein n=1～3; R
5It is the alkyl of 1 to 4 carbon; R
7For hydrogen atom or-CH
2-OH.
9. the non-conducting adhesion material composition according to claim 1 is characterized in that the OH content of this (d) phenolate thing catalyzer is not higher than 400 gram/equivalents.
10. the non-conducting adhesion material composition according to claim 1 is characterized in that this (d) phenolic compound catalyzer comprises both-end phenol hydroxy compound or multiterminal phenol hydroxy compound.
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| CNB200510137453XA CN100439465C (en) | 2005-12-30 | 2005-12-30 | Non-conducting adhesion material composition |
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| CN100439465C CN100439465C (en) | 2008-12-03 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101864147A (en) * | 2010-06-28 | 2010-10-20 | 深圳市库泰克电子材料技术有限公司 | Underfill with low viscosity and low linear expansion coefficient |
| CN102086365A (en) * | 2010-12-27 | 2011-06-08 | 东莞市腾威电子材料技术有限公司 | Adhesive, preparation method and application in integrated circuit board embedment thereof |
| CN102676104A (en) * | 2011-01-18 | 2012-09-19 | 利盟国际有限公司 | Die attach composition for silicon chip placement on a flat substrate having improved thixotropic properties |
| CN103059328A (en) * | 2011-10-21 | 2013-04-24 | 玮锋科技股份有限公司 | Preparation method of non-conductive thin film |
| CN110423585A (en) * | 2019-07-24 | 2019-11-08 | 广东东溢新材料科技有限公司 | A kind of epoxy resin binding compositions, preparation method and glue film for multi-layer flexible wiring board |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5863970A (en) * | 1995-12-06 | 1999-01-26 | Polyset Company, Inc. | Epoxy resin composition with cycloaliphatic epoxy-functional siloxane |
| US5700581A (en) * | 1996-06-26 | 1997-12-23 | International Business Machines Corporation | Solvent-free epoxy based adhesives for semiconductor chip attachment and process |
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2005
- 2005-12-30 CN CNB200510137453XA patent/CN100439465C/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101864147A (en) * | 2010-06-28 | 2010-10-20 | 深圳市库泰克电子材料技术有限公司 | Underfill with low viscosity and low linear expansion coefficient |
| CN101864147B (en) * | 2010-06-28 | 2012-12-26 | 深圳市库泰克电子材料技术有限公司 | Underfill with low viscosity and low linear expansion coefficient |
| CN102086365A (en) * | 2010-12-27 | 2011-06-08 | 东莞市腾威电子材料技术有限公司 | Adhesive, preparation method and application in integrated circuit board embedment thereof |
| CN102086365B (en) * | 2010-12-27 | 2013-01-23 | 东莞市腾威电子材料技术有限公司 | Adhesive, preparation method and application in integrated circuit board embedment thereof |
| CN102676104A (en) * | 2011-01-18 | 2012-09-19 | 利盟国际有限公司 | Die attach composition for silicon chip placement on a flat substrate having improved thixotropic properties |
| CN102676104B (en) * | 2011-01-18 | 2014-10-22 | 船井电机株式会社 | Die attach composition for silicon chip placement on a flat substrate having improved thixotropic properties |
| CN103059328A (en) * | 2011-10-21 | 2013-04-24 | 玮锋科技股份有限公司 | Preparation method of non-conductive thin film |
| CN110423585A (en) * | 2019-07-24 | 2019-11-08 | 广东东溢新材料科技有限公司 | A kind of epoxy resin binding compositions, preparation method and glue film for multi-layer flexible wiring board |
| CN110423585B (en) * | 2019-07-24 | 2021-06-04 | 广东东溢新材料科技有限公司 | Epoxy resin bonding composition for multilayer flexible circuit board, preparation method and adhesive film |
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