CN1988166A - Silicon base tellurium-cadmium-mercury gazing infrared focus plane device chip capable of releasing heat mismatch stress - Google Patents
Silicon base tellurium-cadmium-mercury gazing infrared focus plane device chip capable of releasing heat mismatch stress Download PDFInfo
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- CN1988166A CN1988166A CN 200610148070 CN200610148070A CN1988166A CN 1988166 A CN1988166 A CN 1988166A CN 200610148070 CN200610148070 CN 200610148070 CN 200610148070 A CN200610148070 A CN 200610148070A CN 1988166 A CN1988166 A CN 1988166A
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Abstract
This invention discloses a silicon-base TeCdHg stared infrared focal plane device chip releasing thermal mismatch stress including a Si substrate, a TeCdHg epitaxial film combined with the substrate fixedly, a photosensor array formed on the TeCdHg epitaxial film by a normal device chip preparation technology, small holes releasing thermal-mistatch stress uniformly formed by plasma etch in an isolation region of every 10-20 photosensors so as to let the focal plane chip release thermal mismatch stress in local areas under room-low temperatures(80 K) and the performance of the photosensor will not become invalid because of the stress.
Description
Technical field
The present invention relates to the HgCdTe infrared focal plane device chip, specifically be meant a kind of pixel scale that discharges thermal mismatch stress 320 * 240 and more than silicon-based tellurium-cadmium mercury stare the infrared focal plane array device chip.
Background technology
Stare infrared focal plane array device and be and not only have the imaging sensor that infrared information obtained but also had the advanced person of the information processing function, have important in military, civilian fields such as earth observation from space, electrooptical countermeasures, robot vision, Search/Track, medical and industrial thermal imaging and guided missile precise guidances and use widely.
Infrared focal plane device is a device that is made of multilayer, comprises epitaxial substrate, HgCdTe film, Si reading circuit, interconnection In post, adhesive glue and lead-in wire substrate etc.Usually about 80K, because the thermal coefficient of expansion difference between the layers of material causes focal plane device to bear very big thermal stress at work, thermal stress is one of key factor that causes the infrared focal plane device inefficacy to the working temperature of device.Particularly count specification greater than 320 * 240 the time when pixel, thermal stress cause the photosensitive first performance of device to reduce in addition the problem of complete failure more outstanding.Adopting Si base mercury cadmium telluride with reading circuit heat coupling to prepare detector chip is the target of effort in recent years in the world.Adopt the mercury cadmium telluride thin film material of Si substrate not only to have and the characteristics of Si reading circuit heat coupling, thereby possess also extremely that cheapness, large tracts of land, thermal conductivity highly make that the focal plane device uniformity is better, characteristics such as evenness, mechanical strength and crystal mass height, substrate impurity lack.Yet thermal mismatching is very big between Si substrate and the tellurium cadmium mercury epitaxial film, and thermal stress causes the problem of component failure still to exist.
Summary of the invention
Based on the thermal mismatch problem that exists between above-mentioned Si substrate and the tellurium cadmium mercury epitaxial film, the objective of the invention is to propose a kind of silicon-based tellurium-cadmium mercury infrared focal plane array device chip that discharges thermal mismatch stress between them.
Pixel that the present invention refers to several 320 * 240 and above silicon-based tellurium-cadmium mercury infrared focal plane array device chip, this chip comprises＜211〉crystal orientation Si substrate, tellurium cadmium mercury epitaxial film with Si substrate strong bonded, photosensitive first array that device chip preparation technology by routine forms on the tellurium cadmium mercury epitaxial film, it is characterized in that: the isolated area between every 10-20 photosensitive unit, be equipped with the aperture that forms by plasma etching equably, the aperture yardstick is less than 1% of effective photosensitive elemental area, little hole depth is the thickness of tellurium cadmium mercury epitaxial film, and little internal surface of hole is equipped with passivation layer.
Advantage of the present invention is: introduce stress relief point equably by the photosensitive first array isolated area at focal plane device, it is aperture, make focal plane device in the temperature cycles process of room temperature-low temperature (80K), thermal mismatch stress obtains in local zonule discharging, thereby make the photosensitive first performance in the scope of whole focal plane not cause losing efficacy, improve chip reliability because of thermal mismatch stress.
Description of drawings
Fig. 1 is the cross-sectional view of device chip of the present invention;
Fig. 2 is the planar structure schematic diagram of device chip of the present invention.
Specific implementation method
Below in conjunction with accompanying drawing, be that the present invention is further illustrated for example with several 320 * 240 chips of pixel:
Silicon-based tellurium-cadmium mercury infrared focal plane array chip of the present invention, comprise Si substrate 1, adopt the epitaxy method tellurium cadmium mercury epitaxial film 2 of on the Si substrate, growing, device chip preparation technology by routine forms photosensitive first array 3 on the tellurium cadmium mercury epitaxial film, utilize the appointed condition on the semiconductor device technology line again, make aperture 4 figures by lithography in the pixel isolated area, use the plasma dry lithographic technique that the HgCdTe material etching in the aperture is worn then, carry out the surface passivation of device chip at last.
The detailed process of the harmless etching aperture of plasma dry is as follows: with the chip ICP plasma etching machine of packing into, be evacuated to 5 * 10
-5Torr, the CH of setting etching device
4Flow is 2 standard cubic centimeters of per minute (sccm); The Ar flow is 40 standard cubic centimeters of per minute (sccm); N
2Flow is 15 standard cubic centimeters of per minute (sccm); The chamber pressure of device is 10mTorr; Under above-mentioned technological parameter, about 120 minutes of etch period.
Said ICP plasma etching machine is produced by England Oxford instrument Oxford Instrument PlasmaTechnology, model ICP65 System 80plus.
The introducing of aperture of the present invention must be a prerequisite not influence the focal plane device electric property, promptly will satisfy two conditions: 1. injury-free, the electric property of aperture material around does not have modification; 2. the introducing of aperture is little to the photosensitive first useful signal collection area effect that closes on aperture, and the response homogeneity of photosensitive unit changes little.First condition must rely on advanced plasma dry not damaged lithographic technique (ICP or ECR) to realize.For satisfying second condition, the aperture yardstick will be controlled at less than 1% of effective photosensitive elemental area.Reason is analyzed as follows: with the pixel number is that 320 * 240 focal plane device is an example, and its pixel centre-to-centre spacing is generally 30 μ m, and photosensitive elemental size is 22 μ m * 22 μ m, and photosensitive unit is 8 μ m at interval.The size of each pixel response signal of infrared focal plane device is directly proportional with effective photosensitive elemental area, and effective photosensitive elemental area A
Eff=(a+Lp)
2(for the photosensitive unit of square), wherein a is square photosensitive first length of side, Lp is a minority diffusion length.Concerning the HgCdTe material of 1-3 μ m, 3-5 μ m, three response wave band of 8-12 μ m, minority diffusion length is generally all greater than 10 μ m, so concerning the pixel number is 320 * 240 silica-based infrared focal plane devices, effective photosensitive elemental area reality just equal pixel centre-to-centre spacing square, i.e. 30 μ m * 30 μ m.Orifice size is controlled at Φ 3 μ m, makes aperture 4 photosensitive first effective areas on every side reduce value less than 1%, thus can think little to effect of signals, thus do not influence the uniformity of focal plane.
The present invention successfully applies to pixel several 320 * 240 silica-based HgCdTe infrared focal plane devices, and through the contrast experiment, the cycle-index of chip between room temperature and liquid nitrogen temperature brought up to 100 times by original 10 times and performance is constant.
Claims (1)
1. the silicon-based tellurium-cadmium mercury that can discharge thermal mismatch stress is stared infrared focus plane device chip, this chip comprises＜211〉crystal orientation Si substrate (1), tellurium cadmium mercury epitaxial film (2) with Si substrate strong bonded, photosensitive first array (3) that device chip preparation technology by routine forms on the tellurium cadmium mercury epitaxial film is characterized in that:
Isolated area between every 10-20 photosensitive unit is equipped with the aperture (4) that forms by plasma etching equably, and the aperture yardstick is less than 1% of effective photosensitive elemental area, and little hole depth is the thickness of tellurium cadmium mercury epitaxial film, and little internal surface of hole is equipped with passivation layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101480707A CN100444393C (en) | 2006-12-27 | 2006-12-27 | Silicon base tellurium-cadmium-mercury gazing infrared focus plane device chip capable of releasing heat mismatch stress |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101480707A CN100444393C (en) | 2006-12-27 | 2006-12-27 | Silicon base tellurium-cadmium-mercury gazing infrared focus plane device chip capable of releasing heat mismatch stress |
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| Publication Number | Publication Date |
|---|---|
| CN1988166A true CN1988166A (en) | 2007-06-27 |
| CN100444393C CN100444393C (en) | 2008-12-17 |
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| CNB2006101480707A Active CN100444393C (en) | 2006-12-27 | 2006-12-27 | Silicon base tellurium-cadmium-mercury gazing infrared focus plane device chip capable of releasing heat mismatch stress |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295971A (en) * | 2012-02-22 | 2013-09-11 | 张世杰 | Structure for reducing chip stress and manufacturing method thereof |
| CN105890767A (en) * | 2015-01-23 | 2016-08-24 | 北京大学 | Supporting beam type infrared focal plane array and preparation method thereof |
| CN106323515A (en) * | 2015-07-10 | 2017-01-11 | 成都凯天电子股份有限公司 | Optical fiber F-P cavity stress relief pressure sensor |
| CN110634991A (en) * | 2019-09-02 | 2019-12-31 | 中国电子科技集团公司第十一研究所 | Preparation method of silicon-based tellurium-cadmium-mercury chip and tellurium-cadmium-mercury infrared detector |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2207802B (en) * | 1982-08-27 | 1989-06-01 | Philips Electronic Associated | Thermal-radiation imaging devices and systems,and the manufacture of such imaging devices |
| CN1065291C (en) * | 1998-09-03 | 2001-05-02 | 中国科学院上海技术物理研究所 | Vacuum heat treatment process of molecular beam epitaxial TeCdHg material |
| CN2529386Y (en) * | 2001-12-07 | 2003-01-01 | 中国科学院上海技术物理研究所 | Microminiature mercury-cadmium-telluride photo sensitive element chip for infrared detector |
-
2006
- 2006-12-27 CN CNB2006101480707A patent/CN100444393C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295971A (en) * | 2012-02-22 | 2013-09-11 | 张世杰 | Structure for reducing chip stress and manufacturing method thereof |
| CN103295971B (en) * | 2012-02-22 | 2015-12-16 | 张世杰 | Structure for reducing chip stress and manufacturing method thereof |
| CN105890767A (en) * | 2015-01-23 | 2016-08-24 | 北京大学 | Supporting beam type infrared focal plane array and preparation method thereof |
| CN106323515A (en) * | 2015-07-10 | 2017-01-11 | 成都凯天电子股份有限公司 | Optical fiber F-P cavity stress relief pressure sensor |
| CN110634991A (en) * | 2019-09-02 | 2019-12-31 | 中国电子科技集团公司第十一研究所 | Preparation method of silicon-based tellurium-cadmium-mercury chip and tellurium-cadmium-mercury infrared detector |
| CN110634991B (en) * | 2019-09-02 | 2021-07-02 | 中国电子科技集团公司第十一研究所 | Preparation method of silicon-based tellurium-cadmium-mercury chip and tellurium-cadmium-mercury infrared detector |
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|---|---|
| CN100444393C (en) | 2008-12-17 |
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