CN1983503A - Image display device, display pannel and thin film type electron emission element therefor - Google Patents

Image display device, display pannel and thin film type electron emission element therefor Download PDF

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Publication number
CN1983503A
CN1983503A CNA2006101418994A CN200610141899A CN1983503A CN 1983503 A CN1983503 A CN 1983503A CN A2006101418994 A CNA2006101418994 A CN A2006101418994A CN 200610141899 A CN200610141899 A CN 200610141899A CN 1983503 A CN1983503 A CN 1983503A
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China
Prior art keywords
electron emission
upper electrode
thin film
film type
type electron
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Chinese (zh)
Inventor
的野孝明
小寺喜卫
楠敏明
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
    • H01J29/085—Anode plates, e.g. for screens of flat panel displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/02—Electrodes other than control electrodes
    • H01J2329/04—Cathode electrodes
    • H01J2329/0407—Field emission cathodes

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  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)

Abstract

The present invention can improve the brightness and reliability of the image in the image display technique using film electronic emission element. Therefore, the top part electrode of the film electronic emission element made from plurality of different kinds of metals such as iridium, platinum and gold, heating the local part of electronic emission part, and becoming a compound formed by melting plurality of different kinds of metals, and the thickness of the electronic emission part is smaller than the other part of the top part electrode. The efficiency of electronic emission is improved by making the thickness of the electronic emission part smaller than other parts, and the break line is disappearing in the parts except the electronic emission part, then the reliability is improved.

Description

Image display device, display floater and used thin film type electron emission element
Technical field
The present invention relates to a kind of image display device that uses thin film type electron emission element, particularly relate to the structure of the thin film type electron emission element that is used to improve picture brightness.
Background technology
The electronic emission element of the cold cathode type of emitting electrons is arranged with two-dimensional approach (rectangular), and the display that uses as electron source is called Field Emission Display (FED:FieldEmission Display).The electron source of the cold cathode type of this FED is divided into electric field emission type electron source and thermoelectric subtype electron source.The former comprises circular cone emitter (Spindt) type electron source, surface conductive type electron source, carbon nano-tube (carbon nanotube) type electron source etc., and the latter comprises the thin film electron source of stacked MIS (Metal-Insulator-Semicoductor) type of MIM (Metal-Insulator-Metal) type, the metal-insulator semiconductor that are laminated with metal-insulator-metal type, metal-insulator semiconductor-metal mold etc.
For example the open 2004-363075 communique of Japan Patent, the open 2001-243901 communique of Japan Patent disclose mim type electron source and the employed display unit thereof that belongs to thin film electron source.And Fig. 1 of the open 2004-363075 communique of Japan Patent discloses structure and the operating principle that constitutes the mim type electronic emission element of mim type electron source.Just in this Fig. 1, between upper electrode 13 and lower electrode 11, apply with respect to upper electrode and make lower electrode become the driving voltage Vd of the polarity of positive voltage, make to be thinned to several nm (10 -9M)～number 10nm (10 -9M) electric field in the insulating barrier 12 is 1～10MV/cm (10 6V/10 -2M) about.At this moment, near the electronics the Fermi level in the lower electrode 11 sees through potential barrier because of tunnel effect (tunneling), injects the conduction band as the insulating barrier 12 of electronics acceleration layer, becomes hot electron, and flows into the conduction band of upper electrode 13.These hot electrons scattering and off-energy in insulating barrier 12, upper electrode 13.But with the energy more than the work function  of upper electrode 13, a part of hot electron that arrives upper electrode 13 surfaces is launched in the vacuum 23.
Summary of the invention
As mentioned above, under the situation of thin film type electron emission element, in upper electrode, cause energy loss because of thermionic scattering.Therefore, in order to reduce energy loss, should make the upper electrode filming as far as possible.Like this, can improve, can realize the display unit that becomes clear from the electronic transmitting efficiency of thin film type electron emission element to vacuum.
So, in the open 2001-243901 communique of Japan Patent, in order to improve electronic transmitting efficiency, as upper electrode, with iridium (Ir) film, platinum (Pt) film and gold (Au) film successively respectively with 1 * 10 -9M, 1 * 10 -9M, 2～3 * 10 -9The m left and right thickness is laminated, and carries out heat treated then.Utilize this heat treated, small part with the Ir film is a core, carry out the cohesion of the Au film around it, a plurality of island metallic protrusions that formation is made of Au and Ir, fuse with a plurality of metallic protrusions and and the state deposited under, form that the part A u composition that only condenses between these island-projection portions tails off, be thinner than 5 * 10 -9The smooth metal foil membranous part of m, and reproducibility is good.Just, membrane structure is reconstituted, can realize further filming by this heat treated.In addition, reconstituting of membrane structure call " islandization " below to what form by above-mentioned heat treated.By this islandization, produce the electronics emission from the thinner planar metal film section that reconstitutes, improved electronic transmitting efficiency.The smooth metal foil membranous part that reconstitutes by this islandization is to have the sandwich construction of Ir, Pt, Au so that the compound body of the structure of mixing.
, the inventor is engaged in the research and development of the thin film type electron emission element of device used for image display, designs and manufactured experimently FED, and in testing, finding increases because of islandization causes the resistance of upper electrode.
Fig. 7 represents the figure of the diode current Id (input-output characteristic) between the thin film type electron emission element electrode that flows through before and after the heat treated.Transverse axis is driving voltage Vd in Fig. 7, and the longitudinal axis is diode current Id.Diode current Id becomes logarithmic scale.In addition, Vth is the threshold voltage of diode characteristic, and Vh is the crest voltage that is applied to the regulation of the driving voltage on upper electrode and the lower electrode.
From the input-output characteristic of Fig. 7 as can be seen, the characteristic CD101 of the diode characteristic CD102 after the heat treated before with respect to heat treated, diode current Id is low.This expression is by islandization, and upper electrode is in the result of metallic protrusions that constitutes island and thinner smooth metal foil membranous part, the resistance increase of upper electrode.In inventor's research, comparing before the film resistor of the upper electrode after the heat treated and the heat treated is 2～5 times.
On the other hand, constitute as the mim type electronic emission element of one of thin film type electron emission element such as the mode shown in Figure 10 of the open 2004-363075 communique of Japan Patent.From here as can be seen, its formation of upper electrode comprises: smooth electron emission electrode portion, this electron emission electrode portion help the electronics emission as the top of the insulating barrier of electronics acceleration layer; It with the electron emission electrode portion 131 of general planar the electronics emission periphery of side of the roughly inverted square frustum of bottom surface; Cover the top bus electrode covering part of top bus electrode.And this electronics emission periphery has gradient with respect to above-mentioned smooth electron emission electrode portion.
Between lower electrode and upper electrode, under the situation that applies the driving voltage that makes lower electrode become positive voltage polarity with respect to upper electrode, produce concentrating of electric field holding up part, and flow through big electric current from the above-mentioned smooth electron emission electrode portion of this gradient.Therefore, the composite action by increasing with the resistance that causes because of above-mentioned islandization produces a large amount of Jiao Erre, has the problem that breaks easily on the part of holding up in above-mentioned gradient.
In addition, in case the film resistor of upper electrode increases, because produce voltage drop on the above-mentioned electronics emission periphery of the emission of the electronics in being unfavorable for upper electrode, so reduce for the effective driving voltage Vd of thin film type electron emission element, the electronic transmitting efficiency of this part also reduces.In addition, when driving voltage Vd was increased, the degree that above-mentioned electric field is concentrated was more serious, further reduces reliability.
The present invention is in the display floater of image display device in the employed thin film type electron emission element, electronic transmitting efficiency in the electron emission electrode portion (electron emission part) of upper electrode is improved, be reduced in the increase of following the resistance that islandization causes on the part except this electron emission electrode portion simultaneously, thereby improve the reliability of electronics emission periphery.And the present invention can provide the image display technology that image brightness and reliability are improved.
The present invention, be formed in the upper electrode of thin film type electron emission element of the display floater of image display device by a plurality of different kinds of metals of iridium for example, platinum and gold, its electron emission part is become, the compound body that forms by the fusion of these a plurality of different kinds of metals, and make the thin thickness of its thickness than other parts on this upper electrode.The upper electrode of structure can be effectively from electron emission part emitting electrons to vacuum as mentioned above, and can be to this electron emission part power supply under the state that does not break.
According to the present invention, can improve the electronic transmitting efficiency and the reliability of thin film type electron emission element.Its result can provide the image display technology that image brightness and reliability are improved.
Description of drawings
Fig. 1 is the structure chart of expression as the thin film type electron emission element of the embodiment of the invention.
Fig. 2 is the figure of expression as the example of the formation of the image display device of the embodiment of the invention.
Fig. 3 is the figure of expression with the operation of the electron emission electrode portion of the upper electrode in the thin film type electron emission element of localized heating formation Fig. 1.
Fig. 4 is the figure of effect of the thin film type electron emission element of key diagram 1.
Fig. 5 is the figure of explanation by the effect of the filming of ion erosion generation.
Fig. 6 is the figure of expression by the operation of the electron emission electrode portion of the upper electrode of ion erosion formation thin film type electron emission element.
Fig. 7 is the key diagram of prior art.
Embodiment
Present embodiment relates to have the three-decker that is made of upper electrode, electronics acceleration layer, lower electrode, and the thin film type electron emission element of emitting electrons in a vacuum is used for the pixel portions of display floater, carries out the image display technology that image shows.As thin film type electron emission element the stacked MIS type of the stacked mim type of metal-insulator-metal type, metal-insulator semiconductor, metal-insulator semiconductor-metal mold etc. are arranged.Below to the electronic emission element of the mim type of representational thin film type electron emission element and use its image display technology to describe., the present invention is not the image display technology that is defined in the electronic emission element of this mim type and uses it.
Below with reference to figure embodiments of the invention are described.
Fig. 1～Fig. 6 is the key diagram of embodiments of the invention.Fig. 1 is the structure chart that schematically illustrates the thin film type electron emission element of present embodiment, Fig. 2 is the block diagram that the major part of the image display device of expression present embodiment constitutes, Fig. 3 is the flow chart of explanation with the process of the electron emission electrode portion (electron emission part) of the upper electrode in the thin film type electron emission element of laser radiation formation Fig. 1, Fig. 4 is the figure of effect of the thin film type electron emission element of key diagram 1, Fig. 5 and Fig. 6 are the key diagrams of electron emission electrode portion (electron emission part) the filming technology of the upper electrode that makes thin film type electron emission element of the ion erosion with rare gas, Fig. 5 is the schematic diagram of explanation with the effect of the filming of this ion erosion, and Fig. 6 is the flow chart of explanation with the process of the electron emission electrode portion (electron emission part) of the upper electrode of ion erosion formation thin film type electron emission element.
As shown in Figure 2, its formation of the image display device of present embodiment comprises: a plurality of thin film type electron emission elements are configured to rectangular demonstration and plate 100; Scanner driver (scan line drive circuit) 2 as the drive circuit that drives display floater 100; Data driver (data line drive circuit) 4 as identical drive circuit; Generation is applied to the high voltage generating circuit 6 of the high-tension accelerating voltage on the display floater 100; It carries out predetermined process for signal of video signal, so that can carry out video signal displayed treatment circuit 8 with display floater 100 from video input terminal 7 inputs; Time controller 9 as the control circuit of scanner driver 2 and data driver 4 being controlled according to the signal of video signal of input.
The signal of video signal of input video input terminal 7 at first is input to video processing circuit 8.Video processing circuit 8 carries out the format conversion of the pixel count of signal, the frequency of synchronizing signal etc. for the signal of video signal of input, so that it can show on the rectangular display floater 100 in that thin film type electron emission element is configured to.Signal of video signal has carried out format conversion in video processing circuit 9, be input to time controller 9.Time controller 9 according to the input synchronizing signal, the scan control signal Sscan of generation timing signal, Sscan outputs to scanner driver 2 this scan control signal.This scan control signal Sscan is used for gated sweep driver 2 so that it one by one selects to scan the time signal of a plurality of scan lines.In addition, time controller 9 is synchronous with the generation of scan control signal Sscan, and rearranging of the signal of video signal data that are transfused to outputs to data driver 4.Then, by data driver 4 and scanner driver 2, via display floater 100 display images.
Display floater 100 is image display panels of passive matrix (passive matrix) mode, has in opposite directions back substrate (not expression among the figure) and front substrate (not expression among the figure).Just, back substrate (being also referred to as cathode base) and front substrate (being also referred to as anode substrate) are in the container of vacuum, remain on the interval of regulation with the dividing plate of not representing among the figure, under the temperature of regulation, use melten glass sealings such as (not expressions among the figure).On the substrate many data lines 32 of extending at column direction (vertical direction of picture) are arranged in line direction (horizontal direction of picture) overleaf, the many scan lines 31 that extend on the line direction are arranged on the column direction.In addition, at each intersection point position of many data lines and Duo Gen scan line, be provided with thin film type electron emission element (being designated hereinafter simply as " electronic emission element ") 1.A plurality of like this thin film type electron emission elements 1 are rectangular and are configured on the back substrate.With this back substrate front substrate in opposite directions on, with in opposite directions position configuration fluorophor of each thin film type electron emission element (not showing among the figure), and, also be provided with and cover this fluorophor, and form the metal backing (not showing among the figure) of the anode electrode that applies accelerating voltage.
Scanner driver 2 is connected on the scan line 31 of display floater 100.Scanner driver 2 bases are from the scan control signal Sscan of the time signal of time controller 8, and output is used for selecting with the unit of going the selection signal (sweep signal) of a plurality of thin film type electron emission elements 1.This selects signal to be applied on the scan line in order on the column direction, the selection action of continuously going.Scan line sequential scanning on column direction like this.
In addition, data driver 4 is connected on the data wire 32 of display floater 100.To offer data driver 4 from the image data of time controller 8 outputs.Data driver 4 is selected corresponding to the row of scanner driver 2, and the drive signal based on above-mentioned image data is passed through data wire 32, offers the thin film type electron emission element of delegation.In addition, data driver 4 keeps a horizontal period to delegation's partial data of display floater 100 according to the time signal from time controller 8, just, image data from the delegation of time controller is kept a horizontal period, in addition, in each horizontal cycle rewrite data.
High voltage generating circuit 6 is connected on the anode line 34 of display floater 100, and this high voltage generating circuit 6 generates and to be used to quicken from for example about 7 * 10 of the electronics of thin film type electron emission element 1 3The accelerating voltage of V.Utilization is applied to the accelerating voltage of the metal backing of comprehensive substrate (not having among the figure) by anode line 34, and a side direction front substrate one side is quickened.
Action to the relevant demonstration in the display unit that constitutes in the above described manner describes below.
Be applied with via scan line 31 by above-mentioned scanner driver 2 on delegation's electronic emission element 1 of selecting signal, when data data driver 4 applies drive signal via data wire 32, the electronic emission element of this row is launched the electronics corresponding to the amount of the potential difference (Vd) of selecting signal and drive signal.Because the level of the selection signal that applies when selecting and the location independent of electronic emission element are certain, so change from the electron emission amount of electronic emission element level because of drive signal.Just, electron emission amount is by the level decision of the signal of video signal on the basis that becomes drive signal.From the accelerating voltage of high voltage generating circuit 6 (for example 7 * 10 3V) be added on the anode line 34 of display floater 100.Therefore, utilize this accelerating voltage and be accelerated, impact the fluorophor on the front substrate that is configured in display floater 100 then from the electronic emission element electrons emitted.Fluorophor utilizes the impact of this accelerated electron and is excited, and carries out luminous.Thus, the image that shows a selected horizontal line.In addition, scanner driver 2 carries out the selection of electronic emission element line by line by applying the selection signal for many scan lines order on column direction.Thus, can on the display surface of display floater 100, form a frame image.
Fig. 1 (a) is the plane graph that the part of a pixel of the thin film type electron emission element arrangement in the described display floater 100 of extraction Fig. 2 is represented.In addition, Fig. 1 (b) is A-A ' sectional view of Fig. 1 (a), is the electron emission part by thin film type electron emission element 1, the structure chart of a thin film type electron emission element in the cross section that scan-line direction cuts off.In addition, Fig. 1 (c) is the B-B ' sectional view of Fig. 1 (a), is the electron emission part by thin film type electron emission element 1, the structure chart of a thin film type electron emission element in the cross section that the data wire direction is cut off.And a wherein said pixel (being also referred to as picture point) is the colored unit picture element that shows, each pixel is made of a plurality of sub-pixels (being also referred to as sub-picture point) of the different primary colors of expression.
In Fig. 1, for example become the lower electrode 11 of the data wire of Al (aluminium)-Nd (neodymium) alloy, with for example about 300 * 10 -9The thickness of m on the back substrate (cathode base) 10 of the insulation that is formed on glass etc. on the data wire direction bandedly.On lower electrode 11, form, prevent that electric field is concentrated on the edge of lower electrode 11, for example Al of the electron emission part of restriction simultaneously or regulation emitting electrons 2O 3Protection dielectric film 14 (for example thickness about 140 * 10 -9M) and as for example Al of electronics acceleration layer 2O 3Dielectric film 12 (for example thickness about 10 * 10 -9M).From the plane graph of Fig. 1 (a) as can be seen, dielectric film 12 is seen from above and is roughly rectangle.
On the top of protection dielectric film 14, avoid running into the electron emission electrode portion 131 (be roughly rectangle, the back is described in detail) of the emitting electrons on dielectric film 12 tops, (for example thickness about 100 * 10 for example to form the protection dielectric film 15 of silicon nitride film (SiN) -9M).This protection dielectric film 15 exists in the situation that pin hole (pinfall) arranged on the protection dielectric film 14 that is formed by anodic oxidation, and this defective of landfill plays the effect that keeps the insulation between lower electrode 11 and the top bus electrode (back narration) 20.
And on the protection dielectric film 15 on data wire one side (the paper upside of Fig. 1 (a), the right side of Fig. 1 (c) paper), the electron emission electrode portion 131 that avoids narrating later is formed on the banded top bus electrode 20 that scan-line direction extends.
Top bus electrode 20 is made the stepped construction that for example is made of metal film lower layer 16 and metal film upper strata 18, is the structure that constitutes the part of scan line.As metal film lower layer 16, can use for example Al-Nd alloy, as metal film upper strata 18, can use the various metal materials of Cu (copper) and Cr (chromium) etc.At this, metal film lower layer 16 uses the Al-Nd alloy, and Cu is used on metal film upper strata 18.In addition, in Fig. 1 (c), the metal film lower layer 16 of top bus electrode 20 in order to ensure with being connected of upper electrode 13, in the left side metal film upper strata 18 is stretched out.In addition, metal film lower layer 16 with respect to moving behind the metal film upper strata 18, makes metal film upper strata 18 become an eaves on an opposite side (right side among Fig. 1 (c)).
Upper electrode 13 is the electrode part (electron emission electrode portion) of emitting electrons, for example with the good Ir of heat resistance (iridium) as lower floor, with Pt (platinum) as the intermediate layer, with three layer the metal film of the high Au (gold) of electronic transmitting efficiency as the upper strata, for example on dielectric film 12, form upper electrode 13 with sputtering method.Its thickness for example is about 4 * 10 -9M～about 8 * 10 -9M is suitable, for example is about 6 * 10 at this -9M.In addition, this thickness is not limited thereto.At this moment, simultaneously on top bus electrode 20 and the metal film lower layer 16 that exposes, protection insulating barrier 15, also sputter forms three layers the metal film that constitutes upper electrode 13., upper electrode 13 is in a side (right side among Fig. 1 (c)) of adjacent banded top bus electrode 20, and the eaves cut-out back film forming with its metal film upper strata 18 is separated each picture point.On the other hand; at the opposite side (left side among Fig. 1 (c)) of banded top bus electrode 20, by metal film lower layer 16, upper electrode 13 constitutes continuous film forming; do not produce broken string ground covering protection dielectric film 15 and insulating barrier 12, to the structure of electronic emission element power supply.
In upper electrode 13, be protected the restriction of dielectric film 14 as the area of the electron emission electrode portion 131 of the electrode part of emitting electrons, be roughly the part of running into dielectric film 12 tops.Wherein, be following explanation convenience, is the electron emission electrode portion (electron emission part) 131 with general planar the part of upper electrode 13 bottom surface, frustum side, the side of being roughly, be called electronics emission periphery 132, in addition, the part that forms electron emission part 131 and electronics emission periphery 132 in upper electrode 13 is called upper electrode 130 especially.In addition, in electronics emission periphery 132, the part of top bus electrode 20 1 sides is launched periphery 132a as electronics.And, the front end 16a of electron emission electrode portion 131 1 sides of metal film lower layer 16 and the upper electrode 13 between the electron emission electrode portion 131, play the function of the connecting portion (contact portion) 135 of top bus electrode 20 and electron emission electrode portion 131, constitute from the power supply road of top bus electrode 20 to 131 power supplies of electron emission electrode portion.
Upper electrode 130 has gradient between electron emission electrode portion (electron emission part) 131 and electronics emission periphery 132.Particularly electronics emission periphery 132a is a part that connects the power supply road of top bus electrode 20 and electron emission electrode portion 131.Therefore, the riser portions 133 from the gradient of the electron emission electrode portion 131 of this electronics emission periphery 132a when having applied driving voltage Vd between lower electrode 11 and upper electrode 13, produces concentrating of electric field.
On the other hand, produced islandization with heat treated at upper electrode 13, the thickness that reconstitutes upper electrode 13 is thinner in the past, and its resistance value (film resistor) increases.Therefore, by the superposition that this resistance increases and electric field is concentrated, in electronics emission periphery 132, have at gradient rising part 133 and break the problem that reliability is low easily from electron emission electrode portion 131.
So in the present embodiment, in order to improve reliability, shown in Fig. 1 (b), (c),, constitute the part of electron emission electrode portion (electron emission part) 131 with the compound body of a plurality of different kinds of metals (Ir, Pt, Au are wherein arranged) fusion formation to cause the heat treated of islandization.Just,, make to form to change, constitute the compound body of these a plurality of different kinds of metals in above-mentioned electron emission part above-mentioned a plurality of different kinds of metals fusions.And; make other parts on its Film Thickness Ratio upper electrode 13 thin; particularly thin than part around this electron emission electrode portion (electron emission part) 131, that connect protection dielectric film 14,15; simultaneously, do not cause islandization for upper electrode 13 except the electron emission electrode portion 131 that is roughly rectangle.As mentioned above, from the gradient riser portions 133 of electron emission electrode portion 131, do not produce the filming that causes because of islandization, owing to roughly keep the thickness of formation, resistance value (film resistor) does not increase, and has suppressed broken string, has improved reliability.
In addition, on the top bus electrode 20, in contact portion 135 and in the electronics emission periphery 132, because the not attenuation of thickness of upper electrode 13 can suppress the increase of its resistance value (film resistor), suppresses the reduction of effective driving voltage Vd, compared with the past, improved electronic transmitting efficiency.Therefore, utilize the image display device that is applicable to thin film type electron emission element (electron source) of present embodiment, the image that can obtain becoming clear.
Below for the convenience on illustrating, in the formation of the electronic emission element of Fig. 1, electron emission electrode portion 131 not the electronic emission element of filming state call electronic emission element before the filming.Electronic emission element for example also can form with the technology of patent documentation 1 before this filming.
With Fig. 3 laser (LASER) mode that only makes the 131 thickness attenuation of electron emission electrode portion with laser radiation is described below.
In Fig. 3,
(1) making is equipped with the back substrate (negative electrode substrate) (operation S1) of the preceding electronic emission element of filming of Fig. 1 formation.
(2) only to electron emission electrode portion (electron emission part) 131 irradiating lasers, carry out localized heating, three layers of stacked film of Ir/Pt/Au are carried out heat treated, carry out islandization.In the present embodiment, (YAG:Yittrium (iridium)-Aluminium (aluminium)-Garnet (diamond dust), for example adopting power is 2W/cm for example to use YAG laser as laser 2, wavelength X=355nm (355 * 10 -9M) utilize laser processing only carry out islandization, can only make electron emission electrode portion 131 filmings electron emission electrode portion 131.By localized heating with laser processing, in electron emission electrode portion (electron emission part) 131, make three layers of stacked film of above-mentioned Ir/Pt/Au become the film of the compound body of these three kinds of metals that mix after gold (Au), platinum (Pt), iridium (Ir) fusion, and make its filming.Just,, produce to form change, in above-mentioned electron emission electrode portion 131, constitute the compound body of these three kinds of metals above-mentioned three kinds of metal meltings.Thickness in the electron emission electrode portion 131 adopts under the situation of 4～8nm at the thickness as for example three layers of stacked film of Ir/Pt/Au, from the electronic transmitting efficiency aspect, preferably makes it form only about half of 2～4nm (operation S2).
(3) back substrate (cathode base) is equipped with the electronic emission element after the laser processing filming (electron source) in operation S2, front substrate is formed with fluorophor and metal backing, among the use figure not expression every pulling, in the panel container that back substrate and front substrate is kept not have in the drawings to represent with the interval of regulation (operation S3).
(4) assembling of continuation operation S3, for example utilizing, melten glass carries out panel sealing (operation S4).At this moment, the temperature of panel sealing is set the temperature of three layers of stacked film islandization of the Ir/Pt/Au that does not cause upper electrode 13,130 for.Owing to cause islandization when surpassing 400 ℃, so preferably below 400 ℃.In addition, in the open 2001-243901 communique of Japan Patent, the heat treated of islandization is used 410 ℃.
(5) in case the sealing in operation S4 is finished, become vacuum, carry out vacuum exhaust (operation S5) in order to make in the panel container.
Through above operation, finish panel.In addition, in above-mentioned operation, operation S1, operation S3～operation S5 can use prior art except seal temperature.
As mentioned above, form the electron source that only makes electron emission electrode portion filming with laser processing, after this use the seal temperature that does not cause islandization, counter plate seals, so in the upper electrode except electron emission electrode portion 131 13,130, be difficult to cause because of reconstituting the filming of formation.
Fig. 4 is the figure of effect of the thin film type electron emission element of key diagram 1, is the figure that schematically illustrates the diode current Id (input-output characteristic) between the electrode of the thin film type electron emission element of flowing through.From the input-output characteristic of Fig. 4 as can be seen, the diode characteristic CD104 of thin film type electron emission element, handle preceding characteristic CD101 with respect to laser processing, diode current Id has some to reduce, but increases substantially than the characteristic CD102 after the existing heat treated.Therefore, except the increase of the upper electrode resistance value (film resistor) of electron emission electrode portion 131 reduces, its result, the misgivings that produce broken string at the gradient rising part 133 from electron emission electrode portion 131 reduce, and reliability improves.Simultaneously, also can suppress the reduction of effective driving voltage Vd, compared with the past, improved electronic transmitting efficiency.Its result as the thin film type electron emission element of present embodiment (electron source) is used for display unit, can provide a kind of image display device technology that can show brighter image.
The electron emission part filming of the upper electrode in the thin film type electron emission element of present embodiment except with the above-mentioned laser processing, also can be used the ion erosion (ionattack) of rare gas.
Below, with Fig. 1, Fig. 5 and Fig. 6 the example that forms filming with ion erosion is described.To be explanation form the schematic diagram of the effect of filming with ion erosion to Fig. 5, and Fig. 6 is the figure of forming process of the electron emission electrode portion of the upper electrode in the thin film type electron emission element of explanation present embodiment.In addition, in Fig. 5,, only represented in the drawings near the upper electrode 130 of electron emission electrode portion 131 and electronics emission periphery 132 formations for the convenience on illustrating.
In Fig. 6,
(1) at first, make the back substrate (negative electrode substrate) (operation S11) of the preceding electronic emission element of filming that is equipped with Fig. 1 formation.
(2) back substrate (cathode base) is equipped with the electronic emission element (electron source) before the filming, and front substrate is formed with fluorophor and metal backing, uses every pulling (not expression among the figure), with the interval of regulation (for example 1 * 10 -3M～3 * 10 -3M) in the panel container that back substrate and front substrate are kept not have in the drawings to represent (operation S12).
(3) assembling of continuation operation S12, for example utilizing, melten glass carries out panel sealing (operation S13).At this moment, the temperature of panel sealing is set the temperature (for example below 400 ℃) of three layers of stacked film islandization that do not cause Ir/Pt/Au for.
(4) then, in the panel container, import for example rare gas (operation S14) of Ne (neon), Ar (argon), Xe (xenon) etc.At this, the Ar that obtains is easily adopted in decision, but is not limited thereto.Make pressure in the container easy Ionized pressure of rare gas (for example 0.2～0.8Pa) that reduces pressure then.
(5) after this, drive the FED panel, carry out aging (the operation S15) of stipulated time.In case drive the FED panel, as shown in Figure 5, just from the 131 emitting electrons e of electron emission electrode portion of upper electrode 130 -From the 131 electrons emitted e of electron emission electrode portion -To applying accelerating voltage (for example about 7 * 10 3The metal backing of anode electrode V) (not having among the figure) quickens.Its part is collided with the Ar that is present in the rare gas in the panel, makes the Ar ionization.Ionized Ar +Be attracted electron emission electrode portion 131 1 sides near back substrate (cathode base), cause faint sputtering phenomenon electron emission electrode portion 131.Electron emission electrode portion 131 is heated like this, and by this heating, three layers of stacked film of the Ir/Pt/Au of electron emission electrode portion 131 are caused filming by islandization.By above-mentioned heating, in electron emission electrode portion (electron emission part) 131, three layers of stacked film of above-mentioned Ir/Pt/Au become the film of the compound body of these three kinds of metals that mix after gold (Au), platinum (Pt), iridium (Ir) fusion, and by filming.Just,, produce to form change, make the compound body that constitutes these three kinds of metals in the above-mentioned electron emission electrode portion 131 above-mentioned three kinds of metal meltings.Certainly, this moment Ionized Ar +Also be attracted near the upper electrode 130 beyond the electron emission electrode portion 131., upper electrode is relative with metal backing for example is spaced apart 1 * 10 -3M～3 * 10 -3About m, electric field around here is roughly parallel electric field.Therefore, owing to be ionized, attract near the ratio of electron emission part 131 big from the Ar on the electronics trajectory of electron emission electrode portion 131.Therefore, concentrate the islandization that produces electron emission electrode portion 131, be difficult on the upper electrode beyond the electron emission electrode portion 131, produce islandization.Just, on the upper electrode beyond the electron emission electrode portion 131, suppress to cause because of filming the increase of resistance value (film resistor), the misgivings that produce broken string at the gradient rising part 133 from electron emission electrode portion 131 reduce, and reliability improves.
(6) behind aging in above-mentioned S15 portion, become vacuum, carry out vacuum exhaust (operation S16) in order to make in the panel container.
Through above operation, finish panel.Above-mentioned in-process, operation S11～S13, operation S16 can adopt prior art except seal temperature.
As mentioned above, also can be only realize filming, can improve reliability in the electron emission electrode portion of the upper electrode of thin film type electron emission element with the ion sputtering mode.Simultaneously, also can suppress the reduction of effective driving voltage Vd, compared with prior art, can improve electronic transmitting efficiency.Its result uses the thin film type electron emission element (electron source) of present embodiment in display unit, can show brighter image.

Claims (10)

1. image display device is characterized in that having:
Display floater comprises with the lower part:
A) thin film type electron emission element constitutes by stacking gradually lower electrode, insulating barrier and upper electrode;
B) back substrate is arranged in a plurality of these thin film type electron emission elements rectangular;
C) front substrate is oppositely arranged with this back substrate, and this front substrate is arranged with, because from the electronics of described thin film type electron emission element and luminous fluorophor;
Drive circuit drives described display floater, makes the thin film type electron emission element emitting electrons that is arranged on the described display floater;
Control circuit is controlled described drive circuit according to signal of video signal; Wherein,
The electron emission part of the upper electrode of described thin film type electron emission element, the compound body that is formed by a plurality of different kinds of metals fusions constitutes, and the thickness of the electron emission part of this upper electrode is than the thin thickness of other parts of this upper electrode.
2. image display device as claimed in claim 1 is characterized in that,
The thickness of the electron emission part of the described upper electrode of described thin film type electron emission element, than this upper electrode, be configured in being used to around this electron emission part and limit the thin thickness of the part that the protection insulating barrier of electronics emission is connected.
3. image display device as claimed in claim 1 is characterized in that,
The upper electrode of described thin film type electron emission element comprises iridium, platinum and gold, and described electron emission part is the compound body of these three kinds of metals.
4. image display device as claimed in claim 1 is characterized in that,
The electron emission part of the upper electrode of described thin film type electron emission element makes its filming by localized heating.
5. image display device as claimed in claim 1 is characterized in that,
The electron emission part of the upper electrode of described thin film type electron emission element makes its filming by the ion collision from this thin film type electron emission element electrons emitted and rare gas.
6. image display device as claimed in claim 1 is characterized in that,
The thickness of the electron emission part of the described upper electrode of described thin film type electron emission element is, from about 2 * 10 -9M is to about 4 * 10 -9M.
7. image display device as claimed in claim 1 is characterized in that,
Film resistor in the electron emission part of described upper electrode is bigger than the film resistor on other parts of this upper electrode.
8. a display floater is characterized in that, comprising:
Thin film type electron emission element constitutes by stacking gradually lower electrode, insulating barrier and upper electrode;
Back substrate is arranged in a plurality of these thin film type electron emission elements rectangular;
Front substrate is oppositely arranged with this back substrate, and this front substrate is arranged with, because from the electronics of described thin film type electron emission element and luminous fluorophor; Wherein,
The electron emission part of the upper electrode of described thin film type electron emission element, the compound body that is formed by multiple different metal fusion constitutes, and the thickness of the electron emission part of this upper electrode is than the thin thickness of other parts of this upper electrode.
9. display floater as claimed in claim 8 is characterized in that,
Film resistor in the electron emission part of described upper electrode is bigger than the film resistor on other parts of this upper electrode.
10. display floater as claimed in claim 8 is characterized in that,
Described upper electrode is made of iridium, platinum and gold, and described electron emission part is the compound body of these three kinds of metals.
CNA2006101418994A 2005-12-15 2006-10-09 Image display device, display pannel and thin film type electron emission element therefor Pending CN1983503A (en)

Applications Claiming Priority (2)

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JP2005361651A JP2007165172A (en) 2005-12-15 2005-12-15 Image display unit, display panel, and thin film electron-emitting element used for these
JP2005361651 2005-12-15

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CN1983503A true CN1983503A (en) 2007-06-20

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