CN1972044A - Semiconductor device and method of fabricating the same - Google Patents
Semiconductor device and method of fabricating the same Download PDFInfo
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- CN1972044A CN1972044A CN 200610149412 CN200610149412A CN1972044A CN 1972044 A CN1972044 A CN 1972044A CN 200610149412 CN200610149412 CN 200610149412 CN 200610149412 A CN200610149412 A CN 200610149412A CN 1972044 A CN1972044 A CN 1972044A
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- gan layer
- face gan
- semiconductor device
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Abstract
Provided are semiconductor devices having improved surface morphology characteristics, and a method of fabricating the same. The semiconductor device includes: an r-plane sapphire substrate; an Al<SUB>x</SUB>Ga<SUB>(1-x)</SUB>N(0<=x<1) buffer layer epitaxially grown on the r-plane sapphire substrate to a thickness in the range of 100-20000 AA in a gas atmosphere containing nitrogen (N<SUB>2</SUB>) and at a temperature of 900-1100 DEG C.; and a first a-plane GaN layer formed on the buffer layer.
Description
Technical field
The present invention relates to a kind of GaN semiconductor device, and more specifically, relate to a kind of semiconductor device and manufacture method thereof with surface topography characteristic of improvement.
Background technology
For example the conventional GaN base device of nitride semiconductor laser diode is implemented on the c face GaN substrate.Yet the c face of GaN crystal is known as pole-face.Therefore, in nitride semiconductor laser diode, by the influence by the formed internal electric field of polarization of c face, can reduce the probability of electronics and hole-recombination, this has reduced the luminous efficiency of nitride semiconductor laser diode.
In order to address this problem, developed a kind of in the technology that does not have realization semiconductor device on a face GaN substrate of polarity.
Fig. 1 is the profile of conventional a face GaN substrate, and Fig. 2 and 3 is respectively profile scanning electron microscope (SEM) photo and surperficial SEM photo, has shown a face GaN substrate shown in Figure 1.
By epitaxial growth a face GaN layer 6 on r surface sapphire substrate 2, can obtain a face GaN substrate.Yet the lattice mismatch between r surface sapphire substrate 2 and a face GaN layer 6 is sizable about 16.2%, has produced the V-arrangement defective that is caused by stress thus on the surface that is stacked on a face GaN layer 6 on the r surface sapphire substrate 2.Therefore, when realizing device on the surface of a face GaN layer 6 that has produced the V-arrangement defective thereon, reduced device property.
Summary of the invention
The invention provides a kind of semiconductor device and manufacture method thereof with surface topography characteristic of improvement.
According to aspects of the present invention, provide a kind of semiconductor device, it comprises: the r surface sapphire substrate; Al
xGa
(1-x)N (0≤x＜1) resilient coating is comprising nitrogen (N under 900-1100 ℃ temperature
2) gaseous environment under, epitaxial growth is to the thickness of the scope of 100-20000 on the r surface sapphire substrate; And an a face GaN layer, be formed on the resilient coating.
Comprise nitrogen (N
2) gaseous environment can be N
2And hydrogen (H
2) mixed-gas environment, and the N in the mist
2Ratio can be 1-99.99%.
Can further growth the 2nd a face GaN layer on an a face GaN layer.Here, an a face GaN layer can be formed by the n N-type semiconductor N that comprises n type dopant, and the 2nd a face GaN layer can be formed by the p N-type semiconductor N that comprises p type dopant.
According to a further aspect in the invention, provide a kind of method of making semiconductor device, it comprises: comprising nitrogen (N under 900-1100 ℃ temperature
2) gaseous environment under, epitaxial growth Al on the r surface sapphire substrate
xGa
(1-x)N (0≤x＜1) resilient coating is to the thickness of the scope of 100-20000 , to form resilient coating; With formation the one a face GaN layer on resilient coating.
Described method can also be included in and form the 2nd a face GaN layer on a face GaN layer.Here, an a face GaN layer can be formed by the n N-type semiconductor N that comprises n type dopant, and the 2nd a face GaN layer can be formed by the p N-type semiconductor N that comprises p type dopant.And an a face GaN layer and the 2nd a face GaN layer can form under 900-1200 ℃ temperature, and can form resilient coating under the pressure of 1-200 holder.
According to the present invention, can obtain to have the semiconductor device of the surface topography characteristic of improvement.
Description of drawings
With reference to the accompanying drawings, by describing its one exemplary embodiment in detail, it is more obvious that above and other features and advantages of the present invention will become, in the accompanying drawings:
Fig. 1 is the profile of a face GaN substrate of routine;
Fig. 2 is profile scanning electron microscope (SEM) photo of a face GaN substrate shown in Figure 1;
Fig. 3 is the surperficial SEM photo of a face GaN substrate shown in Figure 1;
Fig. 4 is the profile of semiconductor device according to an embodiment of the invention;
Fig. 5 is the section SEM photo of semiconductor device shown in Figure 4;
Fig. 6 is the surperficial SEM photo of semiconductor device shown in Figure 4;
Fig. 7 is the profile of semiconductor device according to another embodiment of the present invention;
Fig. 8 A is that the flow chart of the manufacture method of semiconductor device according to an embodiment of the invention is shown to 8C;
The thickness of Fig. 9 resilient coating of an a face GaN layer that is Fig. 8 A in the manufacture method of the semiconductor device shown in the 8C is with respect to the curve chart of degree of crystallinity; With
Figure 10 A is the flow chart that the manufacture method of semiconductor device according to another embodiment of the present invention is shown to Figure 10 D.
Embodiment
With reference to the accompanying drawing that wherein shows embodiments of the invention the present invention is described more all sidedly thereafter.In the accompanying drawings, for clear layer and the regional thickness exaggerated.
Fig. 4 is the profile of semiconductor device according to an embodiment of the invention, and Fig. 5 and Fig. 6 are respectively the section SEM photo and the surperficial SEM photos of semiconductor device shown in Figure 4.
With reference to figure 4 to Fig. 6, semiconductor device comprises the Al that stacks gradually on r surface sapphire substrate 12 according to an embodiment of the invention
xGa
(1-x)N (0≤x＜a 1) resilient coating 14 and an a face GaN layer 16.Semiconductor device shown in Fig. 4 can be used as Semiconductor substrate, is used to make the GaN base device.
Comprising nitrogen (N
2) gaseous environment down and under 900-1100 ℃ temperature, resilient coating 14 can be by the thickness of epitaxial growth to the scope of 100-20000 .Here, comprise nitrogen (N
2) gaseous environment be N
2Gaseous environment or N
2And hydrogen (H
2) mixed-gas environment.When resilient coating 14 forms in mixed-gas environment, the N of mist
2Ratio can be 1-99.99%.In this situation, resilient coating 14 can hold in the palm at 1-200 under the pressure of (torr) and form, and preferably forms under the pressure of 100torr.
Resilient coating 14 is used to remedy the lattice mismatch between a r surface sapphire substrate 12 and a face GaN layer 16.So, can improve the surface topography characteristic of a face GaN layer 16 of epitaxial growth on resilient coating 14.Particularly, an a face GaN layer 16 that is stacked on the resilient coating 14 does not comprise the V-arrangement defective, and can have the mirror-like surface topography.Particularly, because a face of GaN crystal is known as non-pole-face, so (see figure 7) when realizing the GaN base device of nitride semiconductor laser diode for example on semiconductor device can be improved the luminous efficiency and the luminous power of nitride semiconductor laser diode.
Fig. 7 is the profile of semiconductor device according to another embodiment of the present invention.As shown in Figure 7, semiconductor device may be implemented as nitride semiconductor laser device.
With reference to figure 7, semiconductor device, promptly nitride semiconductor laser diode comprises the Al that stacks gradually on r surface sapphire substrate 12
xGa
(1-x)N (0≤x＜1) resilient coating 14, an a face GaN layer 20, active layer 22, the 2nd a face GaN layer 24.And, on the step part of an a face GaN layer 20 and the 2nd a face GaN layer 24, utilize electric conducting material such as Ag or Au, formed n electrode 30 and p electrode 40.
Comprising nitrogen (N
2) gaseous environment down and under 900-1100 ℃ temperature, resilient coating 14 can be by the thickness of epitaxial growth to the scope of 100-20000 .Here, comprise nitrogen (N
2) gaseous environment be N
2Gaseous environment or N
2And hydrogen (H
2) mixed-gas environment.When resilient coating 14 forms in mixed-gas environment, the N of mist
2Ratio can be 1-99.99%.In this situation, resilient coating can form under the pressure of 1-200torr, preferably forms under the pressure of 100torr.The resilient coating 14 that forms in such technology is used to remedy the lattice mismatch between a r surface sapphire substrate 12 and a face GaN layer 20.So, can improve the surface topography characteristic of a face GaN layer 20 of epitaxial growth on resilient coating 14.Particularly, an a face GaN layer 20 that is stacked on the resilient coating 14 does not comprise the V-arrangement defective, and can have the surface topography of mirror-like.
In semiconductor device shown in Figure 7, an a face GaN layer 20 can be formed by the n N-type semiconductor N that comprises n type dopant, and the 2nd a face GaN layer 24 can be formed by the p N-type semiconductor N that comprises p type dopant.Particularly, an a face GaN layer 20 is n-GaN base III-V nitride base compound semiconductor layers, and particularly can be the n-GaN layer.Yet an a face GaN layer 20 is not limited thereto, and can be for wherein carrying out the another kind of III-V compound semiconductor layer of laser generation (laser action).In addition, the 2nd a face GaN layer 24 is p-GaN base III-V nitride base compound semiconductor layers, and particularly can be the p-GaN layer.Yet the 2nd a face GaN layer 24 is not limited thereto, and can be for wherein carrying out the another kind of III-V compound semiconductor layer of laser generation (laser action).
The material layer that wherein can carry out laser action can be used as active layer 22.Wherein have the material layer that the laser of little threshold current and stable transverse mode characteristic can be vibrated and to be used as active layer 22.GaN base III-V nitride base compound semiconductor layer In
xAl
yGa
1-x-yN (0≤x≤1,0≤y≤1 and x+y＜1) can be used as active layer 22, has wherein comprised the Al of predetermined ratio.Active layer 22 can have one of multi-quantum pit structure and single quantum well laser, and the structure of active layer 22 does not limit technical scope of the present invention.
As mentioned above, semiconductor device shown in Figure 7 has excellent surface topography characteristic, and have that non-pole-face forms above.So, can improve the surface characteristic that is stacked on the film on a face GaN layer 20, i.e. the surface characteristic of active layer 22 and the 2nd a face GaN layer 24.So, the internal quantum efficiency and the optics extraction efficiency of nitride semiconductor laser diode be can improve, luminous efficiency and luminous power improved thus.
Fig. 8 A is that the flow chart of the manufacture method of semiconductor device according to an embodiment of the invention is shown to 8C.Can utilize chemical vapor deposition (CVD) to form every layer.CVD comprises ald (ALD), metallorganic CVD (MOCVD) and other known vapour depositions.
To 8C, prepare r surface sapphire substrate 12 with reference to figure 8A, under 900-1100 ℃ temperature, comprised nitrogen (N then
2) gaseous environment under, epitaxial growth Al on r surface sapphire substrate 12
xGa
(1-x)N (0≤x＜1) forms resilient coating 14 thus to the thickness of the scope of 100-20000 .Here, comprise nitrogen (N
2) gaseous environment be N
2Gaseous environment or N
2And hydrogen (H
2) mixed-gas environment.When resilient coating 14 forms in mixed-gas environment, the N in the mist
2Ratio can be 1-99.99%.In this situation, resilient coating can form under the pressure of 1-200torr, preferably forms under the pressure of 100torr.
After grown buffer layer 14, on resilient coating 14, form an a face GaN layer 16.The one a face GaN layer 16 can form under 900-1200 ℃ temperature.The one a face GaN layer 16 can be formed by the n N-type semiconductor N that comprises n type dopant.
Resilient coating 14 can insert and put and a r surface sapphire substrate 12 and an a face GaN layer 16 between, and be used to remedy lattice mismatch between a r surface sapphire substrate 12 and a face GaN layer 16.So, can improve the surface topography characteristic that is stacked on a face GaN layer 16 on the resilient coating 14, not comprise the V-arrangement defective and can have the mirror-like surface topography.Particularly, because a face of GaN crystal is known as non-pole-face, so (see figure 10) when realizing the GaN base device of nitride semiconductor laser diode for example on semiconductor device can be improved the luminous efficiency and the luminous power of nitride semiconductor laser diode.Particularly, in manufacturing process according to the present invention, when epitaxial growth buffer 14, the thickness of control resilient coating 14, thereby the degree of crystallinity that an a face GaN layer 16 is thereon piled up in control.This will be described with reference to Figure 9.
The thickness of Fig. 9 resilient coating of an a face GaN layer that is Fig. 8 A in the manufacture method of the semiconductor device shown in the 8C is with respect to the curve chart of degree of crystallinity.The thickness that depends on resilient coating 14 with reference to the degree of crystallinity of figure 9, the one a face GaN layers 16.Particularly, along with the thickness increase of resilient coating 14, improved the degree of crystallinity of an a face GaN layer 16.
Figure 10 A is the flow chart that the manufacture method of semiconductor device according to another embodiment of the present invention is shown to Figure 10 D.Nitride semiconductor laser diode is implemented as semiconductor device, as Figure 10 A to shown in the 10D.Here, Figure 10 A to the manufacture method of the semiconductor device shown in the 10D can comprise with Fig. 8 A to the identical technology of the manufacture method of the semiconductor device shown in the 8C.So,, please refer to Fig. 8 A to 8C and its description for repeating and identical technology.
With reference to figure 10A and 10B, prepared r surface sapphire substrate 12, under 900-1100 ℃ temperature, comprising nitrogen (N then
2) gaseous environment under, epitaxial growth Al on r surface sapphire substrate 12
xGa
(1-x)N (0≤x＜1) forms resilient coating 14 thus to the thickness of the scope of 100-20000 .Afterwards, on resilient coating 14, form an a face GaN layer 20, active layer 22 and the 2nd a face GaN layer 24 successively.
Particularly, in manufacturing process according to the present invention, when epitaxial growth buffer 14, the thickness of control resilient coating 14, thus controlled the degree of crystallinity of piling up an a face GaN layer 20 thereon, as previously mentioned.
The one a face GaN layer 20 can be formed by the n N-type semiconductor N that comprises n type dopant, and the 2nd a face GaN layer 24 can be formed by the p N-type semiconductor N that comprises p type dopant.Each all can form the one a face GaN layer 20 and the 2nd a face GaN layer 24 under 900-1200 ℃ temperature.
Particularly, an a face GaN layer 20 is n-GaN base III-V nitride base compound semiconductor layers, and particularly can be the n-GaN layer.Yet an a face GaN layer 20 is not limited thereto, and can be for wherein carrying out the another kind of III-V compound semiconductor layer of laser generation (laser action).In addition, the 2nd a face GaN layer 24 is p-GaN base III-V nitride base compound semiconductor layers, and particularly can be the p-GaN layer.Yet the 2nd a face GaN layer 24 is not limited thereto, and can be for wherein carrying out the another kind of III-V compound semiconductor layer of laser generation (laser action).
The material layer that wherein can carry out laser action can be used as active layer 22.Wherein have the material layer that the laser of little threshold current and stable transverse mode characteristic can be vibrated and to be used as active layer 22.GaN base III-V nitride base compound semiconductor layer In
xAl
yGa
1-x-yN (0≤x≤1,0≤y≤1 and x+y＜1) can be used as active layer 22, has wherein comprised the Al of predetermined ratio.Active layer 22 can have one of multi-quantum pit structure and single quantum well laser, and the structure of active layer 22 does not limit technical scope of the present invention.
With reference to figure 10C and 10D, on the 2nd a face GaN layer 24 of the superiors, selected predetermined zone, and, on an a face GaN layer 20, formed step part thus its etching/be removed to the desired depth of an a face GaN layer 20.Afterwards, on the step part of an a face GaN layer 20 and the 2nd a face GaN layer 24, utilize electric conducting material, formed n electrode 30 and p electrode 40 such as Ag or Au.
In semiconductor device shown in Figure 7, because an a face GaN layer 20 has excellent surface topography characteristic, and above having that non-pole-face forms, therefore can improve the surface characteristic that is stacked on the film on a face GaN layer 20, i.e. the surface characteristic of active layer 22 and the 2nd a face GaN layer 24.So, the internal quantum efficiency and the optics extraction efficiency of nitride semiconductor laser diode be can improve, luminous efficiency and luminous power improved thus.
According to the present invention, can obtain to have the nitride-based semiconductor device of the surface topography characteristic of improvement.Semiconductor device according to the invention does not comprise the V-arrangement defective and has the mirror-like surface topography.Particularly, because a face of GaN crystal is known as non-pole-face, so when realizing the GaN base device of nitride semiconductor laser diode for example on a face GaN layer 20 that forms on according to the resilient coating 14 of embodiments of the invention in semiconductor device, can improve the luminous efficiency and the luminous power of nitride semiconductor laser diode.
Though specifically show and described the present invention with reference to its one exemplary embodiment, yet one of ordinary skill in the art is appreciated that and do not breaking away under the situation of the spirit and scope of the present invention that defined by claim, can make the different variations on form and the details.
Claims (27)
1, a kind of semiconductor device comprises:
The r surface sapphire substrate;
Al
xGa
(1-x)N (0≤x＜1) resilient coating is comprising N under 900-1100 ℃ temperature
2Gaseous environment under, epitaxial growth is to the thickness of the scope of 100-20000 on described r surface sapphire substrate; And
The one a face GaN layer is formed on the described resilient coating.
2, semiconductor device according to claim 1, a wherein said a face GaN layer has the mirror-like surface topography.
3, semiconductor device according to claim 1, the wherein said N that comprises
2Gaseous environment be N
2And H
2Mixed-gas environment.
4, semiconductor device according to claim 3, the N in the wherein said mist
2Ratio be 1-99.99%.
5, semiconductor device according to claim 1, wherein further growth the 2nd a face GaN layer on a described a face GaN layer.
6, semiconductor device according to claim 1, a wherein said a face GaN layer comprises n type dopant.
7, semiconductor device according to claim 6, a wherein said a face GaN layer is formed by the n N-type semiconductor N.
8, semiconductor device according to claim 5, wherein said the 2nd a face GaN layer comprises p type dopant.
9, semiconductor device according to claim 8, wherein said the 2nd a face GaN layer is formed by the p N-type semiconductor N.
10, semiconductor device according to claim 1, a wherein said a face GaN layer forms under 900-1200 ℃ temperature.
11, semiconductor device according to claim 5, wherein said the 2nd a face GaN layer forms under 900-1200 ℃ temperature.
12, semiconductor device according to claim 1, wherein said resilient coating forms under the pressure of 1-200 holder.
13, a kind of semiconductor device comprises:
The r surface sapphire substrate;
Al
xGa
(1-x)N (0≤x＜1) resilient coating is comprising nitrogen (N under 900-1100 ℃ temperature
2) gaseous environment under, epitaxial growth is to the thickness of the scope of 100-20000 on described r surface sapphire substrate; And
The one a face GaN layer is formed on the described resilient coating and comprises n type dopant;
Active layer is formed on the described a face GaN layer; With
The 2nd a face GaN layer is formed on the described active layer and comprises p type dopant.
14, a kind of method of making semiconductor device comprises:
Comprising under the gaseous environment of nitrogen epitaxial growth Al on the r surface sapphire substrate under 900-1100 ℃ the temperature
xGa
(1-x)N (0≤x＜1) resilient coating is to the thickness of the scope of 100-20000 , to form resilient coating; With
On described resilient coating, form an a face GaN layer.
15, method according to claim 14, a wherein said a face GaN layer has the mirror-like surface topography.
16, method according to claim 14, the wherein said N that comprises
2Gaseous environment be N
2And H
2Mixed-gas environment.
17, method according to claim 14, the N in the wherein said mist
2Ratio be 1-99.99%.
18, method according to claim 14 also is included in growth the 2nd a face GaN layer on the described a face GaN layer.
19, method according to claim 14, a wherein said a face GaN layer forms to comprise n type dopant.
20, method according to claim 19, a wherein said a face GaN layer is formed by the n N-type semiconductor N.
21, method according to claim 18, wherein said the 2nd a face GaN layer forms to comprise p type dopant.
22, method according to claim 21, wherein said the 2nd a face GaN layer is formed by the p N-type semiconductor N.
23, method according to claim 14, a wherein said a face GaN layer forms under 900-1200 ℃ temperature.
24, method according to claim 18, wherein said the 2nd a face GaN layer forms under 900-1200 ℃ temperature.
25, method according to claim 14, wherein said resilient coating forms under the pressure of 1-200 holder.
26, method according to claim 14, the degree of crystallinity of a wherein said a face GaN layer is controlled by the thickness of controlling described resilient coating.
27, a kind of method of making semiconductor device comprises:
Comprising under the gaseous environment of nitrogen epitaxial growth Al on the r surface sapphire substrate under 900-1100 ℃ the temperature
xGa
(1-x)N (0≤x＜1) resilient coating is to the thickness of the scope of 100-20000 , to form resilient coating; With
On described resilient coating, form an a face GaN layer that comprises n type dopant;
On a described a face GaN layer, form active layer; With
On described active layer, form the 2nd a face GaN layer that comprises p type dopant.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20050110882 | 2005-11-18 | ||
| KR110882/05 | 2005-11-18 | ||
| KR102046/06 | 2006-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210424917 Division CN102945903A (en) | 2005-11-18 | 2006-11-17 | Semiconductor device and method of fabricating the same |
Publications (1)
| Publication Number | Publication Date |
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| CN1972044A true CN1972044A (en) | 2007-05-30 |
Family
ID=38112701
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210424917 Pending CN102945903A (en) | 2005-11-18 | 2006-11-17 | Semiconductor device and method of fabricating the same |
| CN 200610149412 Pending CN1972044A (en) | 2005-11-18 | 2006-11-17 | Semiconductor device and method of fabricating the same |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201210424917 Pending CN102945903A (en) | 2005-11-18 | 2006-11-17 | Semiconductor device and method of fabricating the same |
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| KR (1) | KR100773559B1 (en) |
| CN (2) | CN102945903A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101615646A (en) * | 2008-06-24 | 2009-12-30 | 潘晓和 | Threedimensional solid luminescent device and manufacture method thereof |
| CN105161588A (en) * | 2015-08-18 | 2015-12-16 | 西安电子科技大学 | R-plane sapphire substrate-based yellow light-emitting diode (LED) material and preparation method thereof |
| CN112736168A (en) * | 2021-01-18 | 2021-04-30 | 西安电子科技大学 | Nonpolar GaN-based micro light-emitting diode and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3374737B2 (en) | 1997-01-09 | 2003-02-10 | 日亜化学工業株式会社 | Nitride semiconductor device |
-
2006
- 2006-10-19 KR KR1020060102046A patent/KR100773559B1/en not_active IP Right Cessation
- 2006-11-17 CN CN 201210424917 patent/CN102945903A/en active Pending
- 2006-11-17 CN CN 200610149412 patent/CN1972044A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101615646A (en) * | 2008-06-24 | 2009-12-30 | 潘晓和 | Threedimensional solid luminescent device and manufacture method thereof |
| CN105161588A (en) * | 2015-08-18 | 2015-12-16 | 西安电子科技大学 | R-plane sapphire substrate-based yellow light-emitting diode (LED) material and preparation method thereof |
| CN112736168A (en) * | 2021-01-18 | 2021-04-30 | 西安电子科技大学 | Nonpolar GaN-based micro light-emitting diode and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102945903A (en) | 2013-02-27 |
| KR100773559B1 (en) | 2007-11-05 |
| KR20070053103A (en) | 2007-05-23 |
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Application publication date: 20070530 |