CN1970833A - Method for deposition of CIGS solar battery window layer - Google Patents
Method for deposition of CIGS solar battery window layer Download PDFInfo
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- CN1970833A CN1970833A CNA2006101298174A CN200610129817A CN1970833A CN 1970833 A CN1970833 A CN 1970833A CN A2006101298174 A CNA2006101298174 A CN A2006101298174A CN 200610129817 A CN200610129817 A CN 200610129817A CN 1970833 A CN1970833 A CN 1970833A
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Abstract
The invention discloses a making method of CIGS solar battery tool and reacting system of DC glow plasma chemical gas-phase sediment Zn(O,S) and ZnO film, which comprises the following parts: vacuum reacting lid, upper and lower inlet, insulating seat, cooling chamber on the quartz reacting cavity, upper and lower gas cavity, upper and lower outlet pipe with top in the upper and lower gas cavities, wherein the bottom of upper outlet pipe pierces the plasmid area; the outlet of lower gas pipe is set on the plasmid area; two gas pipes are arranged at interval evenly, which are vertical of p-CIGS substrate on the tantalum piece of graphite table; the reacting chamber is extracted into vacuum, which heats p-CIGS substrate; the composite gas of carbon dixodie, hydrogen sulfide and hydrogen is input into inlet pipe, which reacts completely under plasmid; the gas of zinc diethyl or zinc dimethyl is input into inlet pipe, which sediments low-resistance ZnO film on the Zn(O,S) film to obtain n-ZnO/Zn(O,S)/p-CIGS/Mo/glass solar battery tool.
Description
Technical field
The present invention relates to copper-indium-galliun-selenium (Cu (In, Ga) Se
2Be called for short CIGS) the thin film solar cell device making technics, especially relate to a kind of employing DC glow plasma chemical gas-phase method and on the CIGS substrate, deposit Zn (O, S) preparation technology of film and subsequent deposition n-ZnO film.
Background technology
Solar energy power generating is a kind of clean energy of zero release, also is a kind of real energy that can sizable application, can be used to carry out independently generating electricity and generating electricity by way of merging two or more grid systems.Pollution-free with it, be not subjected to plurality of advantages such as region restriction, easy to maintenance, long service life, be widely used in numerous areas such as space flight, communication, military affairs, traffic, urban construction, civilian installation.From the seventies in last century, many countries have started the solar energy power generating upsurge, the ambitious medium-term and long-term development program of the numerous and confused formulation of country such as the U.S., Japan, European Union, India promotes the development of photovoltaic technology and photovoltaic industry, promotes the development of this new forms of energy industry.
The subject matter of solar-photovoltaic technology development is that cost height, efficient are low.Facing maximum problem for silicon solar cell is the price problem of the used high purity silicon of solar cell.The past photovoltaic industry mainly relies on the substandard products silicon materials in the semi-conductor industry, and cost is lower.But along with the prosperity of semi-conductor industry, solar cell output sharply expands, and it is very well sold and in short supply that the supply of silicon materials becomes, and price rises steadily.
The film-type photovoltaic cell is to develop to the beginning of the nineties at the end of the eighties, and has obtained the achievement that attracts people's attention.Mainly contain: amorphous silicon membrane, cadmium telluride (CdTe), CIGS film and dyestuff TiO
2Battery.The power conversion efficiency (pce) height (greater than 30%) of GaAs series, but cost is too high.Cadmium system (CdTe, CdS) battery has higher efficient (16%), but cadmium pollution restricts its development.The CIGS thin-film solar cells is the most representative in thin film solar cell, possess that photoelectric transformation efficiency height, cost are low, characteristics such as stable performance, capability of resistance to radiation are strong, CIGS hull cell top efficiency can reach 19.5%, promises to be the main product of solar cell of new generation most.
The CIGS film is a kind of up-and-coming semiconductor material, and energy gap 1.04eV is better with ground solar spectrum coupling, has 6 * 10
5Cm
-1Uptake factor, be fit to make very much thin-film solar cells.Want strict control semiconductor process parameter in the making processes, guarantee atom and lattice match, while CIGS film and buffer layer, and buffer layer and antireflection film layer adhere to, meanwhile also there are some problems in the CIGS solar cell, major obstacle is that CIGS thin-film material absorption layer is too responsive to element proportioning and crystalline-granular texture defective, makes the yield rate of high-level efficiency battery on the low side.Though CdS has only 50nm thickness, the use of cadmium still environmental pollution is bigger, and alternative CdS is still the problem that people pay close attention to most.(Se) the class film is similar to the CdS membrane structure for O, S, is that ideal substitutes the CdS material for Zn.ZnO is a kind of novel II-VI family semiconductor material with wide forbidden band, and exciton binding energy reaches 60meV, is expected to become the core material of making multiple advanced function device.
We are at Nankai University's optoelectronic thin-film device and the produced no cadmium solar cell device of technical study, be that using plasma enhancing chemical vapour deposition (PECVD) deposits Zn (O on the p-CIGS base, S) thin-film material, continue (O then at Zn, S) buffer layer deposition n-ZnO film obtains not having cadmium solar cell device.Be n-ZnO/Zn (O, S)/p-CIGS/Mo/glass solar cell device.
Summary of the invention
First purpose of the present invention is to provide a kind of can grow high resistant Zn (O, S) buffer layer and follow-up in Zn (O, S) the DC glow plasma chemical vapour deposition reaction system of buffer layer deposition n-ZnO film on the p-CIGS substrate.Its characteristics growth velocity height, film quality are stable, hydrogen and carbonic acid gas, hydrogen sulfide mixing raw material gas can fully reaction under the effect of plasma body.
Second purpose of the present invention is to provide a kind of novel C IGS solar cell device preparing process.
First purpose of the present invention is achieved in that particle filter, off-gas pump, Molotov cocktail and the venting port that the present invention includes vacuum reaction cover, last inlet pipe, lower inlet duct, quartz reaction chamber, bench insulator and be installed in the reaction hood below, feature is that carbonic acid gas, hydrogen sulfide and hydrogen are joined behind separately gas meter, magnetic valve respectively, enters lower inlet duct; The nitrogen of low discharge is flowed through through gas meter, manual valve the steel cylinder of zinc ethyl or zinc methide is housed, and heaves bubble, and zinc ethyl or zinc methide steam are taken out of, joins with the big flow nitrogen through gas meter, magnetic valve, enters inlet pipe; The quartz reaction chamber is installed above the intermediary bench insulator in the vacuum reaction cover, the cooling room that side has connected water inlet pipe and rising pipe is installed above the quartz reaction chamber, above cooling room, be equipped with successively and be connected to lower inlet duct respectively, the lower air chamber of last inlet pipe, upper gas chamber, last escape pipe, stretch respectively at upper gas chamber the upper end of following escape pipe, in the lower air chamber, the lower end is passed in the reaction chamber that cooling room stretches into the quartz reaction chamber, last escape pipe and following escape pipe are evenly and are spaced, plasma slab is passed in the outlet of last escape pipe, the lower end of following escape pipe above plasma slab, two tracheaes all perpendicular to the graphite platform; Be separately installed with the negative electrode that anode and metal tantalum constitute in the both sides in quartz reaction chamber, anode and negative electrode are vertical direction and oppose side by side, anode and negative electrode respectively be fixed on the quartz reaction chamber outside bench insulator on the anode seat be connected with cathode block, when when two interpolars add high direct voltage, produce plasma body between anode and the negative electrode; Reaction chamber bottom in the quartz reaction chamber, under last escape pipe and the following escape pipe, the below of plasma slab is equipped with the graphite platform, the graphite platform is supported by quartzy supporting plate, the top of dwang is installed in the below of quartzy supporting plate, the bottom is connected with the output shaft of the electric motor that is fixed on vacuum reaction cover below, graphite platform upper surface parcel layer of metal tantalum piece, the p-CIGS substrate of desiring deposit film is placed on the tantalum piece, below graphite platform bottom, temperature thermocouple is housed, graphite platform bottom also is mounted with radio-frequency heater, give the heating of graphite platform, the graphite platform is horizontal positioned and vertical with negative electrode with anode with radio-frequency heater; Carbonic acid gas, hydrogen sulfide and hydrogen is through lower inlet duct, lower air chamber, escape pipe enters plasma slab down, fully reacts at effect carbon dioxide, hydrogen sulfide and the hydrogen of plasma body, produces oxygen source and sulphur source; Joined with big flow nitrogen by zinc ethyl or zinc methide steam that the nitrogen of low discharge is taken out of, enter inlet pipe, go up inlet chamber, go up escape pipe, arrive near the p-CIGS substrate through gas meter, magnetic valve.Two gas circuits in oxygen source and sulphur source and zinc source are all perpendicular to the p-CIGS substrate that is placed on bottom, quartz reaction chamber.
Second purpose of the present invention is achieved in that its preparation technology is: will clean the middle position that places the bottom in quartz reaction chamber with the good p-CIGS substrate of pre-treatment, and treat that vacuum chamber will be evacuated to 1 * 10
-3Behind the Pa, radio-frequency heater energising post-heating graphite platform, heating p-CIGS substrate is to 150-350 ℃, behind nitrogen purge p-CIGS substrate 1min, feed carbonic acid gas in 1: 0.5: 0.3～1: 0.5: 0.8 air-flow ratio, hydrogen sulfide and hydrogen, feed big flow nitrogen carrier gas, nitrogen and carbonic acid gas, hydrogen sulfide flow ratio is 4: 1: 0.5～4: 0.5: 0.3, open the nitrogen of low discharge, slowly open the manual valve that zinc ethyl or the organic source of zinc methide steel cylinder are housed, after question response gas enters the quartz reaction chamber, add high direct voltage at two interpolars, produce aura, the pressure of adjustments of gas, concentration, electrode voltage, make carbonic acid gas, hydrogen sulfide and hydrogen is fully reaction under the effect of plasma body, produce oxygen source and sulphur source, zinc ethyl or zinc methide be thermo-cracking on the p-CIGS substrate, produces the zinc source, deposit 15 minutes, (O, S) film are closed hydrogen sulfide then to obtain high resistant Zn like this on the p-CIGS substrate, regulating carbonic acid gas and hydrogen gas stream ratio is 1: 0.8～1: 1.5, (O, S) thin film deposition ZnO film deposit 20 minutes at Zn in continuation, just obtain n-ZnO/Zn (O, S)/p-CIGS/Mo/glass solar cell device.
Principle of work: after treating that vacuum chamber vacuumizes, radio-frequency heater energising post-heating graphite platform, when reaching depositing temperature, charge into reactor feed gas, two electrodes of anode and negative electrode are arranged in the quartz reaction chamber, add high direct voltage at two interpolars, so just, in rough vacuum quartz reaction chamber, produce DC glow plasma, it is little that cathode material adopts electronics to deviate from merit, the tantalum metallic substance that fusing point is high, the pressure of adjustments of gas, concentration, electrode voltage and negative and positive interpolar distance etc., make carbonic acid gas, hydrogen sulfide and hydrogen is fully reaction under the effect of plasma body, produces oxygen source and sulphur source; Zinc ethyl or zinc methide be thermo-cracking on the p-CIGS substrate, produces the zinc source, so just can grow high resistant Zn (O, S) film, the Zn of growth (O, S) film growth rate height, steady quality on the p-CIGS substrate; After deposition for some time, close hydrogen sulfide, allow carbonic acid gas and hydrogen under the effect of plasma body, continue reaction, produce oxygen source, continue at Zn (O, S) thin film deposition ZnO film, produce n-ZnO/Zn (O, S)/p-CIGS/Mo/glass solar cell device.
The present invention with the p-CIGS substrate arrangement outside argon-arc plasma field, and argon-arc plasma field is a level, hydrogen and carbonic acid gas, hydrogen sulfide gas mixture be fully reaction under action of plasma, react with cracked zinc ethyl or zinc methide near the p-CIGS substrate surface, grow the Zn (O of excellent performance, S) thin-film material, the steady quality of film.When zinc ethyl or zinc methide enter reaction chamber, introduced water-cooling system, solved the easy cracked problem of diethyl or zinc methide zinc preferably.Therefore the present invention can grow high resistant Zn (O, the S) ZnO film of film and low-resistance, and the film growth rate height of growth, steady quality on the p-CIGS substrate.
Description of drawings
Fig. 1 always schemes for gas circuit of the present invention;
Fig. 2 is the structural representation of reaction hood;
Fig. 3 is a CIGS solar cell junction composition.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the present invention is described in further detail.
The present invention includes vacuum reaction cover 16, last inlet pipe 15, lower inlet duct 14, quartz reaction chamber 35, bench insulator 36 and the particle filter 17 that is installed in vacuum reaction cover 16 belows, off-gas pump 18, Molotov cocktail 19 and venting port 20, carbonic acid gas is through gas meter (1), magnetic valve (2), hydrogen sulfide is through gas meter (43), magnetic valve (44), hydrogen is through gas meter 3, magnetic valve 4 back and carbonic acid gas, hydrogen sulfide is joined, enter lower inlet duct 14, the steel cylinder 9 that zinc ethyl or zinc methide are housed is placed in the temperature control box 10 that water is housed, the nitrogen of low discharge is through gas meter 7, manual valve 8 steel cylinder 9 of flowing through, heave bubble, zinc ethyl or zinc methide steam are taken out of through manual valve 12, with through gas meter 5, the big flow nitrogen of magnetic valve 6 is joined, enter inlet pipe 15 through magnetic valve 13, between manual valve 8 and manual valve 12, manual valve 11 is installed; Quartz reaction chamber 35 is installed above the intermediary bench insulator 36 in vacuum reaction cover 16, the cooling room 30 that side has connected water inlet pipe 39 and rising pipe 40 is installed above quartz reaction chamber 35, above cooling room 30, be equipped with successively and be connected to lower inlet duct 14 respectively, the lower air chamber 32 of last inlet pipe 15, upper gas chamber 31, last escape pipe 28, stretch respectively at upper gas chamber 31 upper end of following escape pipe 29, in the lower air chamber 32, the lower end is passed in the reaction chamber that cooling room 30 stretches into quartz reaction chamber 35, last escape pipe 28 is evenly with following escape pipe 29 and is spaced, plasma slab 33 is passed in the outlet of last escape pipe 28, the lower end of following escape pipe 29 above plasma slab 33, two tracheaes all perpendicular to graphite platform 21; Be separately installed with the negative electrode 34 that anode 27 and metal tantalum constitute in the both sides in quartz reaction chamber 35, anode 27 and negative electrode 34 are vertical direction and oppose side by side, anode seat 41 on outer with the being fixed on quartz reaction chamber 35 respectively bench insulator 36 of anode 27 and negative electrode 34 is connected with cathode block 42, when when two interpolars add high direct voltage, produce plasma body between anode 27 and the negative electrode 34; The reaction chamber in quartz reaction chamber 35 bottom, on escape pipe 28 and following escape pipe 29 under, plasma slab 33 below graphite platform 21 is installed, graphite platform 21 is supported by quartzy supporting plate 23, below graphite platform 21 bottoms, temperature thermocouple 38 is housed, graphite platform 21 upper surfaces parcel layer of metal tantalum piece 25, the p-CIGS substrate 26 of desiring deposit film is placed on the tantalum piece 25, graphite platform 21 bottoms also are mounted with radio-frequency heater 24, give the graphite platform 21 heating, graphite platform 21 is horizontal positioned and vertical with negative electrode 34 with anode 27 with radio-frequency heater 24; The top of push rod 22 is fixed on the below of quartzy supporting plate 23, the lower end be fixed on reaction hood under 16 sides' the output shaft of electric motor 37 be connected; Carbonic acid gas, hydrogen sulfide and hydrogen is through lower inlet duct 14, lower air chamber 32, escape pipe 29 enters plasma slab 33 down, fully reacts at effect carbon dioxide, hydrogen sulfide and the hydrogen of plasma body, produces oxygen source and sulphur source; Joined with big flow nitrogen by zinc ethyl or zinc methide steam that the nitrogen of low discharge is taken out of, enter inlet pipe 15, go up inlet chamber 31, go up escape pipe 28, arrive near the p-CIGS substrate 26 through gas meter 5, magnetic valve 6.Two gas circuits in oxygen source and sulphur source and zinc source are all perpendicular to the p-CIGS substrate 26 that is placed on 35 bottoms, quartz reaction chamber.
Preparation technology is: will clean the middle position that places the bottom in quartz reaction chamber 35 with the good p-CIGS substrate 26 of pre-treatment, and treat that vacuum chamber will be evacuated to 1 * 10
-3Behind the Pa, radio-frequency heater 24 energising post-heating graphite platforms 21,26 to 150-350 ℃ of heating p-CIGS substrates, behind nitrogen purge p-CIGS substrate 1min, feed carbonic acid gas in 1: 0.5: 0.3～1: 0.5: 0.8 air-flow ratio, hydrogen sulfide and hydrogen, feed big flow nitrogen carrier gas, nitrogen and carbonic acid gas, hydrogen sulfide flow ratio is 4: 1: 0.5～4: 0.5: 0.3, open the nitrogen of low discharge, slowly open the manual valve 8 that zinc ethyl or the organic source of zinc methide 9 steel cylinders are housed, 12, after question response gas enters quartz reaction chamber 35, add high direct voltage at two interpolars, produce aura, the pressure of adjustments of gas, concentration, electrode voltage, make carbonic acid gas, hydrogen sulfide and hydrogen is fully reaction under the effect of plasma body, produce oxygen source and sulphur source, zinc ethyl or zinc methide be thermo-cracking on p-CIGS substrate 26, produce the zinc source, deposit 15 minutes, on p-CIGS substrate 26, obtain high resistant Zn (O like this, S) film, close the under meter (43) of hydrogen sulfide then, magnetic valve (44), regulating carbonic acid gas and hydrogen gas stream ratio is 1: 0.8～1: 1.5, continues at Zn (O, S) thin film deposition ZnO film, deposit 20 minutes, just obtain n-ZnO/Zn (O, S)/p-CIGS/Mo/glass solar cell device.
Claims (5)
1, a kind of DC glow plasma chemical vapour deposition Zn (O, S) system of film, comprise vacuum reaction cover (16), last inlet pipe (15), lower inlet duct (14), quartz reaction chamber (35), bench insulator (36) and be installed in the particle filter (17) of vacuum reaction cover (16) below, off-gas pump (18), Molotov cocktail (19) and venting port (20), it is characterized in that: carbonic acid gas is through gas meter (1), magnetic valve (2), hydrogen sulfide is through gas meter (43), magnetic valve (44), hydrogen is through gas meter (3), magnetic valve (4) back and carbonic acid gas, hydrogen sulfide is joined, enter lower inlet duct (14), the steel cylinder (9) that zinc ethyl or zinc methide are housed is placed in the temperature control box (10) that water is housed, the nitrogen of low discharge is through gas meter (7), manual valve (8) steel cylinder (9) of flowing through, heave bubble, zinc ethyl or zinc methide steam are taken out of through manual valve (12), with through gas meter (5), the big flow nitrogen of magnetic valve (6) is joined, enter inlet pipe (15) through magnetic valve (13), between manual valve (8) and manual valve (12), manual valve (11) is installed; Intermediary bench insulator (36) top is equipped with quartz reaction chamber (35) in vacuum reaction cover (16), in quartz reaction chamber (35) top the cooling room (30) that side has connected water inlet pipe (39) and rising pipe (40) is installed, lower air chamber (32), the upper gas chamber (31) that is connected to lower inlet duct (14) respectively, goes up inlet pipe (15) is installed successively in cooling room (30) top, stretch respectively in upper gas chamber (31), lower air chamber (32) upper end of last escape pipe (28), following escape pipe (29), and the lower end is passed cooling room (30) and stretched in the reaction chamber of quartz reaction chamber (35); Be separately installed with the negative electrode (34) that anode (27) and metal tantalum constitute in the both sides of quartz reaction chamber (35), anode (27) and negative electrode (34) are vertical direction and oppose side by side, anode seat (41) on outer with being fixed on quartz reaction chamber (35) the respectively bench insulator (36) of anode (27) and negative electrode (34) is connected with cathode block (42), when when two interpolars add high direct voltage, produce plasma body between anode (27) and the negative electrode (34); The reaction chamber of quartz reaction chamber (35) bottom, go up escape pipe (28) and following escape pipe (29) under, the below of plasma slab (33) is equipped with graphite platform (21), graphite platform (21) is supported by quartzy supporting plate (23), in below, graphite platform (21) bottom temperature thermocouple (38) is housed, graphite platform (21) bottom also is mounted with radio-frequency heater (24), give graphite platform (21) heating, graphite platform (21) is horizontal positioned and vertical with negative electrode (34) with anode (27) with radio-frequency heater (24); The top of push rod (22) is fixed on the below of quartzy supporting plate (23), the lower end be fixed on reaction hood under the output shaft of electric motor (37) of (16) side be connected; Carbonic acid gas, hydrogen sulfide and hydrogen is through lower inlet duct (14), lower air chamber (32), escape pipe (29) enters plasma slab (33) down, fully reacts at effect carbon dioxide, hydrogen sulfide and the hydrogen of plasma body, produces oxygen source and sulphur source; Joined with big flow nitrogen by zinc ethyl or zinc methide steam that the nitrogen of low discharge is taken out of through gas meter (5), magnetic valve (6), enter inlet pipe (15), go up inlet chamber (31), go up escape pipe (28), arrive near the p-CIGS substrate (26).
2, DC glow plasma chemical vapour deposition Zn (O as claimed in claim 1, S) system of film, it is characterized in that: go up escape pipe (28) and be evenly with following escape pipe (29) and be spaced, plasma slab (33) is passed in the outlet of last escape pipe (28), the lower end of following escape pipe (29) is in the top of plasma slab (33), two tracheaes all perpendicular to graphite platform (21).
3, DC glow plasma chemical vapour deposition Zn (O as claimed in claim 1 or 2, S) system of film, it is characterized in that: graphite platform (21) upper surface parcel layer of metal tantalum piece (25), the p-CIGS substrate (26) of desiring deposit film is placed on the tantalum piece (25), p-CIGS substrate (26) is configured in plasma body outside the venue, and plasma field is a level.
4, DC glow plasma chemical vapour deposition Zn (O as claimed in claim 1, S) preparation technology of film, it is characterized in that: will clean the middle position that places the bottom in quartz reaction chamber 35 with the good p-CIGS substrate 26 of pre-treatment, and treat that vacuum chamber will be evacuated to 1 * 10
-3Behind the Pa, radio-frequency heater 24 energising post-heating graphite platforms 21,26 to 150-350 ℃ of heating p-CIGS substrates, behind nitrogen purge p-CIGS substrate 1min, feed carbonic acid gas in 1: 0.5: 0.3～1: 0.5: 0.8 air-flow ratio, hydrogen sulfide and hydrogen, feed big flow nitrogen carrier gas, nitrogen and carbonic acid gas, hydrogen sulfide flow ratio is 4: 1: 0.5～4: 0.5: 0.3, open the nitrogen of low discharge, slowly open the manual valve 8 that zinc ethyl or the organic source of zinc methide 9 steel cylinders are housed, 12, after question response gas enters quartz reaction chamber 35, add high direct voltage at two interpolars, produce aura, the pressure of adjustments of gas, concentration, electrode voltage, make carbonic acid gas, hydrogen sulfide and hydrogen is fully reaction under the effect of plasma body, produce oxygen source and sulphur source, zinc ethyl or zinc methide be thermo-cracking on p-CIGS substrate 26, produce the zinc source, deposit 15 minutes, on p-CIGS substrate 26, obtain high resistant Zn (O like this, S) film, close the under meter (43) of hydrogen sulfide then, magnetic valve (44), regulating carbonic acid gas and hydrogen gas stream ratio is 1: 0.8～1: 1.5, continues at Zn (O, S) thin film deposition ZnO film, deposit 20 minutes, just obtain n-ZnO/Zn (O, S)/p-CIGS/Mo/glass solar cell device.
5, DC glow plasma chemical vapour deposition Zn (O as claimed in claim 1, S) preparation technology of film, it is characterized in that: adopt the DC glow plasma chemical vapour deposition on the p-CIGS substrate, to deposit high resistant Zn (O, S) film, continue then to adopt this reactive system at high resistant Zn (O, S) deposition low-resistance ZnO film on the film, obtain n-ZnO/Zn (O, S)/p-CIGS/Mo/glass solar cell device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101298174A CN100510170C (en) | 2006-12-04 | 2006-12-04 | System and technique for chemically gas-phase Zn(O,S) film through DC glow discharge plasma |
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| CNB2006101298174A CN100510170C (en) | 2006-12-04 | 2006-12-04 | System and technique for chemically gas-phase Zn(O,S) film through DC glow discharge plasma |
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| CN100510170C CN100510170C (en) | 2009-07-08 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101459042B (en) * | 2007-12-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | Exhaust system and wafer heat treatment apparatus |
| CN102234759A (en) * | 2010-04-29 | 2011-11-09 | 亚洲太阳科技有限公司 | Coating method for manufacturing thin film solar cell |
| CN102337516A (en) * | 2011-09-29 | 2012-02-01 | 中国建材国际工程集团有限公司 | Deposition method for buffer layer of cadmium-free copper-indium-gallium-selenium thin film solar cell |
| CN102074614B (en) * | 2009-11-20 | 2012-07-25 | 正峰新能源股份有限公司 | Method for preparing sol-gel solution of copper-indium-gallium-selenium solar battery |
| TWI416744B (en) * | 2011-04-27 | 2013-11-21 | Jenn Feng New Energy Co Ltd | Selenium vapor rapid crystallization annealing furnace |
| CN107299335A (en) * | 2017-07-19 | 2017-10-27 | 旭科新能源股份有限公司 | The device and method that the hot gas and reaction solution of a kind of immersion method deposition film are recycled |
| CN108982645A (en) * | 2018-07-24 | 2018-12-11 | 江南大学 | A kind of integrated form online test method of nano-coating technique |
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2006
- 2006-12-04 CN CNB2006101298174A patent/CN100510170C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101459042B (en) * | 2007-12-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | Exhaust system and wafer heat treatment apparatus |
| CN102074614B (en) * | 2009-11-20 | 2012-07-25 | 正峰新能源股份有限公司 | Method for preparing sol-gel solution of copper-indium-gallium-selenium solar battery |
| CN102234759A (en) * | 2010-04-29 | 2011-11-09 | 亚洲太阳科技有限公司 | Coating method for manufacturing thin film solar cell |
| TWI416744B (en) * | 2011-04-27 | 2013-11-21 | Jenn Feng New Energy Co Ltd | Selenium vapor rapid crystallization annealing furnace |
| CN102337516A (en) * | 2011-09-29 | 2012-02-01 | 中国建材国际工程集团有限公司 | Deposition method for buffer layer of cadmium-free copper-indium-gallium-selenium thin film solar cell |
| CN107299335A (en) * | 2017-07-19 | 2017-10-27 | 旭科新能源股份有限公司 | The device and method that the hot gas and reaction solution of a kind of immersion method deposition film are recycled |
| CN108982645A (en) * | 2018-07-24 | 2018-12-11 | 江南大学 | A kind of integrated form online test method of nano-coating technique |
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|---|---|
| CN100510170C (en) | 2009-07-08 |
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