CN100355937C - System for CD glow plasma CVD zin oxide film and preparing process - Google Patents
System for CD glow plasma CVD zin oxide film and preparing process Download PDFInfo
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- CN100355937C CN100355937C CNB2005100300083A CN200510030008A CN100355937C CN 100355937 C CN100355937 C CN 100355937C CN B2005100300083 A CNB2005100300083 A CN B2005100300083A CN 200510030008 A CN200510030008 A CN 200510030008A CN 100355937 C CN100355937 C CN 100355937C
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- 238000000034 method Methods 0.000 title abstract description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 title description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 93
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 239000011787 zinc oxide Substances 0.000 claims abstract description 46
- 239000007789 gas Substances 0.000 claims abstract description 37
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000010453 quartz Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 21
- 239000010439 graphite Substances 0.000 claims abstract description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 12
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000004227 thermal cracking Methods 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- 239000011701 zinc Substances 0.000 claims description 25
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 24
- 229910052725 zinc Inorganic materials 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 8
- 229910052715 tantalum Inorganic materials 0.000 abstract description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 6
- JRPGMCRJPQJYPE-UHFFFAOYSA-N zinc;carbanide Chemical group [CH3-].[CH3-].[Zn+2] JRPGMCRJPQJYPE-UHFFFAOYSA-N 0.000 abstract 2
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 description 17
- 229960001296 zinc oxide Drugs 0.000 description 14
- 235000011089 carbon dioxide Nutrition 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000011160 research Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 2
- 241000486406 Trachea Species 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 210000003437 trachea Anatomy 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention discloses a system for preparing zinc oxide films by a direct current glow plasma chemical vapor deposition method and a preparation process thereof. The present invention comprises a vacuum reaction cover, an upper air inlet pipe, a lower air inlet pipe and an insulating base. The present invention is characterized in that a cooling chamber, a gas outlet chamber and a gas inlet chamber are respectively arranged above a quartz reaction chamber; the upper ends of the upper outlet air pipe and the lower outlet air pipe respectively extends into the gas inlet chamber and the gas outlet chamber; the lower end of the upper outlet air pipe penetrates through a plasma region, an outlet of the lower outlet air pipe is arranged above the plasma region, the two air pipes are uniformly provided with intervals and are vertical to a substrate; the substrate is arranged on a tantalum sheet which is arranged on the upper surface of a graphite station; an anode and a cathode are arranged at both sides of the quartz reaction chamber and are vertically and oppositely arranged in parallel; after the reaction chamber is evacuated, the substrate is heated, diethyl zinc gas or zinc methyl gas enters the upper gas inlet pipe, and a mixed gas of carbon dioxide and hydrogen gas enters the lower air inlet pipe; the carbon dioxide sufficiently reacts with the hydrogen gas under the action of plasma, the diethyl zinc or the zinc methyl are processed via thermal cracking on the substrate, and the zinc oxide film with high preferred orientation and stable quality is prepared.
Description
Technical field
The present invention relates to the preparation of semiconductor film material, especially relate to a kind of technology of utilizing the DC glow plasma chemical gas-phase deposition system to prepare zinc-oxide film.
Background technology
Zinc oxide (ZnO) is novel II-VI family semiconductor material with wide forbidden band, in a lot of fields very application prospects is arranged all.It has the crystalline structure of hexagonal wurtzite-type, belongs to direct wide bandgap semiconductor, and energy gap 3.30eV under the room temperature has very high exciton binding energy 60meV simultaneously.ZnO possesses the ability of blue light or ultraviolet light emission in theory, its higher exciton bind energy in addition, have significant low threshold value excitation mechanism under the environment of room temperature being higher than, under this guide of theory, the preparation of ZnO film and its characteristics of luminescence caused people's attention.In the process of research, also find to have the good ZnO film of orientation, piezoelectricity and photovoltaic effect are preferably arranged, can be used as surface acoustic wave element, acousto-optic element and optical waveguides.The ZnO film of low-resistivity can replace traditional transparent conductive film ITO and as the window material of solar cell, photo-sensor and flat-panel display device.And utilize ZnO film to develop short-wave long light-emitting diode and laser apparatus.
Along with the rise of flat-panel display device, the researchist also attempts ZnO is developed into a kind of green fluorescence thin-film material of low-voltage high-efficiency.The energy band structure of ZnO material is comparatively complicated, and ZnO film can be realized the light emission of multiple bands of a spectrum, but the researchist also has nothing in common with each other to the explanation of its luminescence mechanism.So result of study of research summary former studies personnel, and adopt experiment and the theoretical method that combines further to explore the luminescence mechanism of ZnO film, to help autotelic even, the fine and close ZnO film of the satisfactory big area of performance of preparing of people, to obtain high-intensity monochromatic ray, especially blue green light.
After people such as Tang found the room temperature stimulated emission and follow-up discovery ZnO self-forming resonator cavity of ZnO film in 1997, ZnO became the new focus of the semiconductor light electrical domain after GaN rapidly, and a lot of in the world countries have started the research boom of ZnO film in succession; China's the Tenth Five-Year Plan (2001-2005) 863 project guides are also ZnO film and device column thereof the subsidy project of attaching most importance to.
The research of ZnO material has had very long history in fact, nineteen sixty Thomas prepares single crystal ZnO with simple device with the vapor transportation method, and its structure and optical property done comparatively careful systematic study, yet the still ZnSe base semiconductor material that comes into the picture the earliest.In decades, the multinomial excellent specific property of ZnO is in the widespread use in fields such as piezoelectric, gas detector, photochemical catalysis, but before the nineties in 20th century, the application of ZnO is confined to powdered material or polycrystalline material always.
The research group of D.M.Bangall utilizes the optical pumping lasing threshold of the ZnO of MBE growth to reduce to 240kw/cm
2, and its exciton emission temperature can reach 550 ℃.People such as Minegishi then utilize nitrogen to realize that as doping agent the lower concentration P type of ZnO film mixes.Along with the acquisition and the adulterated realization of P type of the stimulated radiation of ZnO optical pumping ultraviolet, ZnO film also has huge development potentiality as a kind of novel photoelectric material in fields such as ultraviolet detector, LEDs.
The research work of ZnO also is in the research initial stage.At first be that the intrinsic material quality remains to be increased substantially, the P type of ZnO mixes also not to be had from truly being resolved, and the level of distance making device is also far.
In preparation zinc oxide films membrane process,, use ZnO target or Zn target and O how with ion magnetically controlled sputter method deposition ZnO film
2/ Ar atmosphere; Adopt metal organic chemical vapor deposition (MOCVD) method deposition ZnO film, generally use H
2O, O
2, N
2O, CO
2As oxygen source, zinc ethyl or zinc methide are as zinc source, H
2O, O
2, N
2O and zinc ethyl or zinc methide speed of response are too fast, sedimentary film quality instability, carbonic acid gas is highly stable, is difficult to disassociation, and therefore the zinc-oxide film of growth is second-rate, can not get the zinc-oxide film of height preferred orientation, we use hydrogen and carbon dioxide mix gas under action of plasma by evidence, can obtain oxygen source preferably, zinc ethyl or zinc methide reaction with thermo-cracking just can obtain having the zinc-oxide film of highly selecting the superior.At present domestic and international plasma reinforcing and metal organic chemical vapor deposition equipment, plasma body is full of reaction chamber mostly, and the substrate majority is configured near the anode; In thin film growth process, electron beam is bombarding firm sedimentary film always, and Sheng Chang film is difficult to reappear the quality instability like this.
Summary of the invention
First purpose of the present invention be to provide a kind of can grow on silicon single crystal or the sapphire that zinc-oxide film, growth velocity height, the film quality of highly selecting the superior are stable, hydrogen and carbon dioxide mix unstripped gas can effect at plasma body under the abundant system of the DC glow plasma chemical vapour deposition zinc-oxide film of reaction.
Second purpose of the present invention is to provide a kind of technology of utilizing the DC glow plasma chemical gas-phase deposition system to prepare zinc-oxide film.
First purpose of the present invention is achieved in that and the present invention includes the vacuum reaction cover, last inlet pipe, lower inlet duct, the quartz reaction chamber, bench insulator and the particle filter that is installed in the reaction hood below, off-gas pump, Molotov cocktail and venting port, feature is that carbonic acid gas and hydrogen are respectively through separately gas meter, join behind the magnetic valve, enter lower inlet duct, the nitrogen of low discharge is through gas meter, manual valve is flowed through the steel cylinder of zinc ethyl or zinc methide is housed, heave bubble, zinc ethyl or zinc methide steam are taken out of, with through gas meter, the big flow nitrogen of magnetic valve is joined, and enters inlet pipe; The quartz reaction chamber is installed above the intermediary bench insulator in the vacuum reaction cover, the cooling room that side has connected water inlet pipe and rising pipe is installed above the quartz reaction chamber, above cooling room, be equipped with successively and be connected to lower inlet duct respectively, the lower air chamber of last inlet pipe, upper gas chamber, last escape pipe, stretch respectively at upper gas chamber the upper end of following escape pipe, in the lower air chamber, the lower end is passed in the reaction chamber that cooling room stretches into the quartz reaction chamber, last escape pipe and following escape pipe are evenly and are spaced, plasma slab is passed in the outlet of last escape pipe, the lower end of following escape pipe is above plasma slab, and two tracheaes are all perpendicular to the graphite platform; Be separately installed with the negative electrode that anode and metal tantalum constitute in the both sides in quartz reaction chamber, anode and negative electrode are vertical direction and oppose side by side, anode and negative electrode respectively be fixed on the quartz reaction chamber outside bench insulator on the anode seat be connected with cathode block, when when two interpolars add high direct voltage, produce plasma body between anode and the negative electrode; Reaction chamber bottom in the quartz reaction chamber, under last escape pipe and the following escape pipe, the below of plasma slab is equipped with the graphite platform, the graphite platform is supported by quartzy supporting plate, the top of dwang is installed in the below of quartzy supporting plate, the bottom is connected with the output shaft of the electric motor that is fixed on vacuum reaction cover below, graphite platform upper surface parcel layer of metal tantalum piece, silicon single crystal or the sapphire substrate of desiring deposit film are placed on the tantalum piece, below graphite platform bottom, temperature thermocouple is housed, graphite platform bottom also is mounted with radio-frequency heater, give the heating of graphite platform, the graphite platform is horizontal positioned and vertical with negative electrode with anode with radio-frequency heater; Carbonic acid gas and hydrogen is through lower inlet duct, lower air chamber, escape pipe enters plasma slab down, fully reacts at the effect carbon dioxide and the hydrogen of plasma body, produces oxygen source; Joined with big flow nitrogen by zinc ethyl or zinc methide steam that the nitrogen of low discharge is taken out of, enter inlet pipe, go up inlet chamber, go up escape pipe, arrive near the substrate through gas meter, magnetic valve.Two gas circuits in oxygen source and zinc source are all perpendicular to the substrate that is placed on bottom, quartz reaction chamber.
Second purpose of the present invention is achieved in that its preparation technology is: will clean and middle position that the good silicon single crystal of pre-treatment or sapphire substrate place the bottom in quartz reaction chamber, and treat that vacuum chamber will be evacuated to 1 * 10
-3Behind the Pa, radio-frequency heater energising post-heating graphite platform, heated substrate is to 450-550 ℃, behind hydrogen and nitrogen purge silicon single crystal or sapphire substrate 5min, in 1: the air-flow ratio of 0.5-1.5 feeds carbonic acid gas and hydrogen, feed big flow nitrogen carrier gas, nitrogen and carbon dioxide flow ratio are 5: 1-0.5, open the nitrogen of low discharge, and slowly open the manual valve that zinc ethyl or the organic source of zinc methide steel cylinder are housed, after question response gas enters the quartz reaction chamber, add high direct voltage at two interpolars, produce aura, the pressure of adjustments of gas, concentration, electrode voltage, make the fully reaction under the effect of plasma body of carbonic acid gas and hydrogen, produce oxygen source, zinc ethyl or zinc methide thermo-cracking on substrate produces the zinc source, deposit half an hour, on substrate, obtain the zinc-oxide film of height preferred orientation like this.
Principle of work: after treating that vacuum chamber vacuumizes, radio-frequency heater energising post-heating graphite platform, when reaching depositing temperature, charge into reactor feed gas, two electrodes of anode and negative electrode are arranged in the quartz reaction chamber, add high direct voltage at two interpolars, so just, in rough vacuum quartz reaction chamber, produce DC glow plasma, it is little that cathode material adopts electronics to deviate from merit, the tantalum that fusing point is high (Ta) metallic substance, the pressure of adjustments of gas, concentration, electrode voltage and negative and positive interpolar distance etc., make the fully reaction under the effect of plasma body of carbonic acid gas and hydrogen, produce oxygen source; Zinc ethyl or zinc methide thermo-cracking on substrate produces the zinc source, so just can grow the zinc-oxide film of highly selecting the superior on silicon single crystal or sapphire, and film growth rate height, the steady quality of growth.
The present invention is configured in substrate outside the argon-arc plasma field, and argon-arc plasma field is a level, hydrogen and carbon dioxide mix gas is fully reaction under action of plasma, react with cracked zinc ethyl or zinc methide near substrate surface, grow the Zinc oxide film material of excellent performance, the steady quality of film.When zinc ethyl or zinc methide enter reaction chamber, introduced water-cooling system, solved the easy cracked problem of zinc ethyl or zinc methide preferably.Therefore the present invention can grow height preferred orientation zinc-oxide film on silicon single crystal or sapphire, and the film growth rate height of growth, steady quality.
Description of drawings
Fig. 1 always schemes for gas circuit of the present invention;
Fig. 2 is the structural representation of reaction hood.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the present invention is described in further detail.
The present invention includes vacuum reaction cover 16, last inlet pipe 15, lower inlet duct 14, quartz reaction chamber 35, bench insulator 36 and the particle filter 17 that is installed in vacuum reaction cover 16 belows, off-gas pump 18, Molotov cocktail 19 and venting port 20, carbonic acid gas is through gas meter 1, magnetic valve 2, hydrogen is through gas meter 3, join with carbonic acid gas in magnetic valve 4 backs, enter lower inlet duct 14, the steel cylinder 9 that zinc ethyl or zinc methide are housed is placed in the temperature control box 10 that water is housed, the nitrogen of low discharge is through gas meter 7, manual valve 8 steel cylinder 9 of flowing through, heave bubble, zinc ethyl or zinc methide steam are taken out of through manual valve 12, with through gas meter 5, the big flow nitrogen of magnetic valve 6 is joined, enter inlet pipe 15 through magnetic valve 13, between manual valve 8 and manual valve 12, manual valve 11 is installed; Quartz reaction chamber 35 is installed above the intermediary bench insulator 36 in vacuum reaction cover 16, the cooling room 30 that side has connected water inlet pipe 39 and rising pipe 40 is installed above quartz reaction chamber 35, above cooling room 30, be equipped with successively and be connected to lower inlet duct 14 respectively, the lower air chamber 32 of last inlet pipe 15, upper gas chamber 31, last escape pipe 28, stretch respectively at upper gas chamber 31 upper end of following escape pipe 29, in the lower air chamber 32, the lower end is passed in the reaction chamber that cooling room 30 stretches into quartz reaction chamber 35, last escape pipe 28 is evenly with following escape pipe 29 and is spaced, plasma slab 33 is passed in the outlet of last escape pipe 28, the lower end of following escape pipe 29 is above plasma slab 33, and two tracheaes are all perpendicular to graphite platform 21; Be separately installed with the negative electrode 34 that anode 27 and metal tantalum constitute in the both sides in quartz reaction chamber 35, anode 27 and negative electrode 34 are vertical direction and oppose side by side, anode seat 41 on outer with the being fixed on quartz reaction chamber 35 respectively bench insulator 36 of anode 27 and negative electrode 34 is connected with cathode block 42, when when two interpolars add high direct voltage, produce plasma body between anode 27 and the negative electrode 34; The reaction chamber in quartz reaction chamber 35 bottom, on escape pipe 28 and following escape pipe 29 under, plasma slab 33 below graphite platform 21 is installed, graphite platform 21 is supported by quartzy supporting plate 23, below graphite platform 21 bottoms, temperature thermocouple 38 is housed, graphite platform 21 upper surfaces parcel layer of metal tantalum piece 25, the substrate 26 of desiring deposit film is placed on the tantalum piece 25, graphite platform 21 bottoms also are mounted with radio-frequency heater 24, give the graphite platform 21 heating, graphite platform 21 is horizontal positioned and vertical with negative electrode 34 with anode 27 with radio-frequency heater 24; The top of push rod 22 is fixed on the below of quartzy supporting plate 23, the lower end be fixed on reaction hood under 16 sides' the output shaft of electric motor 37 be connected; Carbonic acid gas and hydrogen is through lower inlet duct 14, lower air chamber 32, escape pipe 29 enters plasma slab 33 down, fully reacts at the effect carbon dioxide and the hydrogen of plasma body, produces oxygen source; Joined with big flow nitrogen by zinc ethyl or zinc methide steam that the nitrogen of low discharge is taken out of, enter inlet pipe 15, go up inlet chamber 31, go up escape pipe 28, arrive near the substrate 26 through gas meter 5, magnetic valve 6.Two gas circuits in oxygen source and zinc source are all perpendicular to the substrate 26 that is placed on 35 bottoms, quartz reaction chamber.
Preparation technology is: will clean and middle position that the good silicon single crystal of pre-treatment or sapphire substrate 26 place the bottom in quartz reaction chamber 35, and treat that vacuum chamber will be evacuated to 1 * 10
-3Behind the Pa, radio-frequency heater 24 energising post-heating graphite platforms 21,26 to 450-550 ℃ of heating silicon single crystal or sapphire substrates, behind hydrogen and nitrogen purge silicon single crystal or sapphire substrate 5min, in 1: the air-flow ratio of 0.5-1.5 feeds carbonic acid gas and hydrogen, feed big flow nitrogen carrier gas, nitrogen and carbon dioxide flow ratio are 5: 1-0.5, open the nitrogen of low discharge, slowly open the manual valve 8 that zinc ethyl or the organic source of zinc methide steel cylinder 9 are housed, 12, after question response gas enters quartz reaction chamber 35, add high direct voltage at two interpolars, produce aura, the pressure of adjustments of gas, concentration, electrode voltage, make the fully reaction under the effect of plasma body of carbonic acid gas and hydrogen, produce oxygen source, zinc ethyl or zinc methide be thermo-cracking on substrate 26, produces the zinc source, deposit half an hour, on substrate 26, obtain the zinc-oxide film of height preferred orientation like this.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100300083A CN100355937C (en) | 2005-09-23 | 2005-09-23 | System for CD glow plasma CVD zin oxide film and preparing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100300083A CN100355937C (en) | 2005-09-23 | 2005-09-23 | System for CD glow plasma CVD zin oxide film and preparing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1752280A CN1752280A (en) | 2006-03-29 |
| CN100355937C true CN100355937C (en) | 2007-12-19 |
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|---|---|---|---|
| CNB2005100300083A Expired - Fee Related CN100355937C (en) | 2005-09-23 | 2005-09-23 | System for CD glow plasma CVD zin oxide film and preparing process |
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| CN105097607B (en) * | 2014-05-22 | 2019-02-19 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and its cleaning method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1045658A (en) * | 1989-03-16 | 1990-09-26 | 中国科学院上海冶金研究所 | A kind of preparation method of metallic oxide superconduction film |
| CN1110723A (en) * | 1993-12-28 | 1995-10-25 | 佳能株式会社 | Method and apparatus for forming deposited film |
| CN2844139Y (en) * | 2005-09-23 | 2006-12-06 | 南昌大学 | The DC glow plasma vapor phase growing apparatus |
-
2005
- 2005-09-23 CN CNB2005100300083A patent/CN100355937C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1045658A (en) * | 1989-03-16 | 1990-09-26 | 中国科学院上海冶金研究所 | A kind of preparation method of metallic oxide superconduction film |
| CN1110723A (en) * | 1993-12-28 | 1995-10-25 | 佳能株式会社 | Method and apparatus for forming deposited film |
| CN2844139Y (en) * | 2005-09-23 | 2006-12-06 | 南昌大学 | The DC glow plasma vapor phase growing apparatus |
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| CN1752280A (en) | 2006-03-29 |
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