CN1964037A - A stacking type semiconductor chip package - Google Patents
A stacking type semiconductor chip package Download PDFInfo
- Publication number
- CN1964037A CN1964037A CN200510117763.5A CN200510117763A CN1964037A CN 1964037 A CN1964037 A CN 1964037A CN 200510117763 A CN200510117763 A CN 200510117763A CN 1964037 A CN1964037 A CN 1964037A
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- semiconductor chip
- several
- electric conductor
- conductive metal
- outside
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Semiconductor Integrated Circuits (AREA)
Abstract
The disclosed static semiconductor chip package body comprises: a first semiconductor chip with an upper and lower surfaces and multiple external conductive bodies on the lower surface, a second semiconductor chip with a lower surface and some external conductors, and some conductive metal elements connected between the wire on the first chip upper surface and the wire on the lower surface of the first chip. Wherein, the second semiconductor chip is arranged on upper surface of the first chip.
Description
Technical field
The present invention relates to a kind of capsulation body of semiconductor ship, particularly relate to a kind of low profile stacking type semiconductor chip package.
Background technology
In recent years, the microminiaturization of capsulation body of semiconductor ship and multifunction are the trend for continuing.In order to satisfy this demand, chip size packages (CSP) technology and stacked package technology are to arise at the historic moment.With regard to the semiconductor memory chip, if identical together chip-stacked of two specifications, the memory size of then final internal memory packaging body is increased.Yet semiconductor chip is stacked the height that certainly will cause whole packaging body to be increased, like this then against the trend of microminiaturization.
In view of this, this case inventor then is engaged in the many years of experience of the sector with it, and in line with excelsior spirit, the active research improvement has the present invention's " low profile stacking type semiconductor chip package " to produce then.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor chiop and method for packing thereof.
Of the present invention one is characterised in that: this stacking type semiconductor chip package comprises: one first semiconductor chip, its have a upper surface, lower surface, and several outsides that are installed on this lower surface connect electric conductor, be to be laid with several conductive metal wires respectively on the upper surface of this first semiconductor chip and lower surface, every conductive metal wire on the lower surface of this first semiconductor chip is that the outside corresponding with connects electric conductor and be electrically connected; One second semiconductor chip, it has the outside that a lower surface and several are installed on this lower surface and connects electric conductor, and this second semiconductor chip is installed on the upper surface of this first semiconductor chip so that the outside of this second semiconductor chip, and to connect electric conductor be to be electrically connected with corresponding conductive metal wire on the upper surface of this first semiconductor chip; And several conductive metal elements, each conductive metal element one of is connected electrically on the upper surface of this first semiconductor chip corresponding conductive metal wire and corresponding conductive metal wire one of on the lower surface of this first semiconductor chip.
Another feature of the present invention is: this stacking type semiconductor chip package comprises: one first semiconductor chip, its have a upper surface, lower surface, and several be laid in conductive metal wire on this upper surface and the lower surface respectively; One second semiconductor chip, it has the outside that a lower surface and several are installed on this lower surface and connects electric conductor, and this second semiconductor chip is installed on the upper surface of this first semiconductor chip so that the outside of this second semiconductor chip, and to connect electric conductor be to be electrically connected with corresponding conductive metal wire on the upper surface of this first semiconductor chip; And several conductive metal elements, each conductive metal element one of is connected electrically on the upper surface of this first semiconductor chip corresponding conductive metal wire and corresponding conductive metal wire and have and be used for the external circuit connecting portion that is electrically connected with external circuit one of on the lower surface of this first semiconductor chip.
Another feature of the present invention is: this stacking type semiconductor chip package comprises: one first semiconductor chip, it has a upper surface, a lower surface, and several outsides that are installed on this lower surface connect electric conductor, on the upper surface of this first semiconductor chip and lower surface is to be laid with several conductive metal wires respectively, every conductive metal wire on the lower surface of this first semiconductor chip is that the outside corresponding with connects the electric conductor electrical connection, and this first semiconductor chip has more several being used for the conduction semi-circular hole that is electrically connected to the conductive metal wire of the correspondence on this lower surface at the conductive metal wire on this upper surface along its edge setting; And one second semiconductor chip, it has the outside that a lower surface and several are installed on this lower surface and connects electric conductor, and this second semiconductor chip is installed on the upper surface of this first semiconductor chip so that the outside of this second semiconductor chip, and to connect electric conductor be to be electrically connected with corresponding conductive metal wire on the upper surface of this first semiconductor chip.
Another feature of the present invention is: this stacking type semiconductor chip package comprises: a substrate, this substrate have a upper surface, a lower surface, a rectangle hold perforation, and several run through the plating perforation on this upper and lower surface, be to be formed with several conducting metal lines respectively on this upper surface and lower surface, every conducting metal line is that the plating perforation from a correspondence extends to and one of defines in these four hole walls that hold perforation near the person; One first semiconductor chip, it has a upper surface, a lower surface, and several outsides that are installed on this lower surface connect electric conductor, on the upper surface of this first semiconductor chip and lower surface is to be laid with several conductive metal wires respectively, every conductive metal wire on the lower surface of this first semiconductor chip is that the outside corresponding with connects electric conductor and be electrically connected, this first semiconductor chip be installed on this substrate hold in the perforation so that each the bar conducting metal line on the upper surface of this first semiconductor chip be with upper surface at this substrate on one of corresponding conducting metal line linking and each the bar conducting metal line on the lower surface of this first semiconductor chip be with lower surface at this substrate on one of corresponding conducting metal line be connected; One second semiconductor chip, it has the outside that a lower surface and several are installed on this lower surface and connects electric conductor, and this second semiconductor chip is installed on the upper surface of this first semiconductor chip so that the outside of this second semiconductor chip, and to connect electric conductor be to be electrically connected with corresponding conductive metal wire on the upper surface of this first semiconductor chip; And several are used for the conductive metal element that is electrically connected at the upper and lower lip-deep conducting metal line of this first semiconductor chip at the conducting metal line of the upper and lower lip-deep correspondence of this substrate.
Description of drawings
Below in conjunction with drawings and Examples stacking type semiconductor chip package of the present invention is elaborated:
Fig. 1 to Fig. 4 is the schematic diagram for the stacking type semiconductor chip package that shows first preferred embodiment of the present invention;
Fig. 5 to Fig. 8 is the schematic diagram for the stacking type semiconductor chip package that shows second preferred embodiment of the present invention;
Fig. 9 and 10 is the schematic diagrames for the stacking type semiconductor chip package that shows the 3rd preferred embodiment of the present invention;
Figure 11 to 14 is the schematic diagrames for the stacking type semiconductor chip package that shows the 4th preferred embodiment of the present invention;
Figure 15 is the diagrammatic side view that shows the stacking type semiconductor chip package of the 5th preferred embodiment of the present invention for;
Figure 16 is the diagrammatic side view that shows the stacking type semiconductor chip package of the 6th preferred embodiment of the present invention for;
Figure 17 is the diagrammatic side view that shows the stacking type semiconductor chip package of the 7th preferred embodiment of the present invention for;
Figure 18 is the diagrammatic side view that shows the stacking type semiconductor chip package of the 8th preferred embodiment of the present invention for;
Figure 19 is the diagrammatic side view that shows the stacking type semiconductor chip package of the 9th preferred embodiment of the present invention for; And
Figure 20 is the diagrammatic side view that shows the stacking type semiconductor chip package of the tenth preferred embodiment of the present invention for.
Embodiment
For convenience of description, following embodiment, components identical is represented with same numeral.
Consult Fig. 1 to Fig. 4, the stacking type semiconductor chip package of first preferred embodiment of the present invention comprises a substrate 1, one first semiconductor chip 2, reaches one second semiconductor chip 3.
Substrate 1 have a upper surface 10, lower surface 11, a rectangle hold perforation 12, and several run through upper and lower surperficial 10 and 11 plating perforation 13.Several first conducting metal lines 14 are to be formed on the upper surface 10 of substrate 1.Every first conducting metal line 14 be the plating perforation 13 from a correspondence extend to one of define in these four hole walls that hold perforation 12 near.
Several second conducting metal lines 15 are to be formed on the lower surface 11 of substrate 1.Every second conducting metal line 15 be the plating perforation 13 from a correspondence extend to one of define in these four hole walls that hold perforation 12 near.These first conducting metal lines 14 are via the plating perforation 13 of correspondence and the corresponding second conducting metal line, 15 electrical connections.
This first semiconductor chip 2 have a upper surface 20, lower surface 21, and several outsides that are installed on the lower surface 21 connect electric conductor 22.Several the 3rd conducting metal lines 23 are to be formed on the upper surface 20 of first semiconductor chip 2.Every the 3rd conducting metal line 23 is to extend to a position that is equivalent to the outside connection electric conductor 22 of a correspondence from the edge of chip 2.
Several the 4th conducting metal lines 24 are to be formed on the lower surface 21 of first semiconductor chip 2.Every the 4th conducting metal line 24 is that the outside that extends to a correspondence from the edge of this chip 2 connects electric conductor 22 can connect electric conductor 22 electrical connections with corresponding outside.
This first semiconductor chip 2 be installed on substrate 1 hold in the perforation 12 so that the 3rd conducting metal line 23 of each article on the upper surface 20 of first semiconductor chip 2 be with upper surface 10 at substrate 1 on one of the corresponding first conducting metal line, 14 linkings and each article the 4th conducting metal line 24 on the lower surface 21 at first semiconductor chip 2 be with lower surface 11 at substrate 1 on one of the corresponding second conducting metal line 15 be connected.
In order to ensure this first semiconductor chip 2 upper and lower surperficial 20 and 21 on the third and fourth conducting metal line 23 and 24 with substrate 1 upper and lower surperficial 10 and 11 on the corresponding first and second conducting metal lines 14 and 15 between reliable electrical connection, the conducting metal line 23 of per two correspondences, 24,14 and 15 is to be connected by a conductive metal element 4 (figure does not show).These conductive metal elements 4 can be made by any suitable conductive metallic material, for example, and tin cream, elargol, conducting metal glue, lead or the like.
Insulating protective layer 5 (see figure 1) are to be formed on the upper surface 10 of substrate 1 around second semiconductor chip 3.The effect of this insulating protective layer 5 be firm this first and second semiconductor chip 2 and 3 and the moisture that is electrically connected that prevents from influence between this first and second semiconductor chip 2 and 3 invade.
Should be noted that in also can be laid with on the upper surface of second semiconductor chip 3 with upper surface 20 at first semiconductor chip 2 on the similar conductive metal wire of conductive metal wire with can further stacked second half conductor chip thereon.Perhaps, end depends on the needs, and is the circuit trace that can be laid with any needs on the upper surface of second semiconductor chip 3, for example, has electric wave reception and the antenna loop of the function of emission, any biological detecting probe or sensing element formation loop or the like.
On the other hand, the size of first semiconductor chip 2 and second semiconductor chip 3, type, and function or the like can be inequality.
Consult Fig. 5 to Fig. 8, the stacking type semiconductor chip package of second preferred embodiment of the present invention comprises one first semiconductor chip 2 and one second semiconductor chip 3.
Several the 4th conducting metal lines 24 are to be formed on the lower surface 21 of first semiconductor chip 2.Every the 4th conducting metal line 24 is that the outside that extends to a correspondence from the edge of chip 2 connects electric conductor 22 and can connect electric conductor 22 electrical connections with corresponding outside.
Each article the 3rd conducting metal line 23 on the upper surface 20 of first semiconductor chip 2 is to come and corresponding the 4th conducting metal line 24 electrical connections one of on lower surface 21 via a conductive metal element 4 '.In the present embodiment, these conductive metal elements 4 ' are to have on the upper surface 20 that places first semiconductor chip 2 on first arm 40 ' that is electrically connected with the 3rd conducting metal line 23 that can be corresponding with one, the lower surface 21 that places first semiconductor chip 2 with second arm 41 ' that can be electrically connected with corresponding the 4th a conducting metal line 24, and arm connecting portion 42 ' that is connected first arm 40 ' and second arm 41 ' for the sheet metal of U-shaped roughly and each conductive metal element 4 '.
This second semiconductor chip 3 has a lower surface 31 and several outsides that is installed on the lower surface 31 connect electric conductor 32.This second semiconductor chip 3 is to be installed on the upper surface 20 of first the semiconductor chip 2 so that outside of second semiconductor chip 3 to connect electric conductor 32 be to be electrically connected with the 3rd corresponding conducting metal line 22 on the upper surface 20 of first semiconductor chip 2.In this way, the internal circuit of this second semiconductor chip 3 can be electrically connected with external circuit via waiting outside connection electric conductor 32, these grade in an imperial examination three conductive metal wires 23, these conductive metal elements 4 ', these grade in an imperial examination four conductive metal wires 24 to be connected electric conductor 22 with these outsides.
Consult Fig. 9 to Figure 10, be to show the 3rd preferred embodiment of the present invention for one, different with second preferred embodiment is, each conductive metal element 4 ' comprises that more one extends out with the external circuit connecting portion 43 ' that can be electrically connected with the external circuit (not shown) from arm connecting portion 42 '.Because the setting of these external circuit connecting portions 43 ' is to exempt in conducting metal line on the lower surface of first semiconductor chip 2 shown in second preferred embodiment and outside connection electric conductor (seeing the 8th figure).
Consult Figure 11 to Figure 14, the stacking type semiconductor chip package of the 4th preferred embodiment of the present invention comprises one first semiconductor chip 2 and one second semiconductor chip 3.
This first semiconductor chip 2 has a upper surface 20, lower surface 21, several are installed on outsides on the lower surface 21 and connect electric conductor 22, and several conduction semi-circular hole 25 that are provided with along the edge of first semiconductor chip 2.Formation of these conduction semi-circular hole 25 can be by this first semiconductor chip 2 before a wafer cuts out earlier along line of cut boring and electroplate form electroplate perforation and and then be formed along line of cut cutting.Certainly, these conduction semi-circular hole 25 also can be formed by any other suitable means, for example, replace electroplating perforation to electroplate to form to form conducting resinl-filling perforation with the conducting resinl filling.
Several the 3rd conducting metal lines 23 are to be formed on the upper surface 20 of this first semiconductor chip 2.Every the 3rd conducting metal line 23 is the conduction semi-circular hole 25 that extend to a correspondence from the position that an outside that is equivalent to a correspondence connects electric conductor 22.
Several the 4th conducting metal lines 24 are to be formed on the lower surface 21 of first semiconductor chip 2.Every the 4th conducting metal line 24 is to connect electric conductor 22 to extend to the conduction semi-circular hole 25 of a correspondence can connect electric conductor 22 electrical connections with corresponding outside from the outside of a correspondence.
This second semiconductor chip 3 has a lower surface 31 and several outsides that is installed on the lower surface 31 connect electric conductor 32.Second semiconductor chip 3 is to be installed on the upper surface 20 of first the semiconductor chip 2 so that outside of second semiconductor chip 3 to connect electric conductor 32 be to be electrically connected with the 3rd corresponding conducting metal line 23 on the upper surface 20 of first semiconductor chip 2.In this way, the internal circuit of this second semiconductor chip 3 can be connected electric conductor 22 with these outsides and be electrically connected with external circuit via these outside connection electric conductors 32, these grade in an imperial examination three conductive metal wires 23, these grade in an imperial examination four conductive metal wires 24.
Consult Figure 15, the 5th preferred embodiment of the present invention comprises a substrate 1 ', one first semiconductor chip 2, one second semiconductor chip 3, reaches a protective layer 5.
This substrate 1 ' have a upper surface 10, lower surface 11, several run through this upper and lower surperficial 10 with 11 plating perforation 13, and several outsides that are arranged on lower surfaces 11 of substrate 1 ' be connected electric conductor 14.Several first conducting metal line (not shown) similar to first preferred embodiment are to be formed on the upper surface 10 of substrate 1 '.Every first conducting metal line is that the plating perforation 13 from a correspondence extends to a preposition.
Several second conducting metal line (not shown) similar to first preferred embodiment are to be formed on the lower surface 11 of substrate 1 '.Every second conducting metal line is that outside that the plating perforation 13 from a correspondence extends to a correspondence connects electric conductor 14 and connects electric conductor 14 with outside that can be corresponding with this and be electrically connected.These first conducting metal lines 14 are via the plating perforation 13 of correspondence and corresponding second conducting metal line electrical connection.
This first semiconductor chip 2 be with identical shown in the 4th preferred embodiment and therefore, it is described in detail in this and repeats no more for this reason.First semiconductor chip 2 is to be set on the upper surface 10 of substrate 1 ' so that the outside of this first semiconductor chip 2 to connect electric conductor 22 (seeing Figure 14) be to be electrically connected with the first conducting metal line on the upper surface 10 of this substrate 1 '.
This second semiconductor chip 3 be with identical shown in the 4th preferred embodiment and also be be arranged on first semiconductor chip 2 in the identic form described in the 4th preferred embodiment.
Insulating protective layer 5 is to be formed on the upper surface 10 of substrate 1 ' can cover these semiconductor chips 2 and 3.
Consulting Figure 16, is to show the 6th preferred embodiment of the present invention for one, and different with the 5th preferred embodiment is that this preferred embodiment comprises four semiconductor chips that pile up setting.
Consult Figure 17, the 7th preferred embodiment of the present invention comprises one first substrate 1 ', one second substrate 6, one the 3rd substrate 7, one first semiconductor chip 2, one second semiconductor chip 3, reaches a protective layer 5.
Identical described in the 5th preferred embodiment and therefore this substrate 1 ' is with it is described in detail in this and repeats no more.
Identical described in first preferred embodiment and therefore this second substrate 6 is with it is described in detail in this and repeats no more.
This first semiconductor chip 2 be with identical shown in first preferred embodiment and also be be installed on second substrate 6 in form identical described in first preferred embodiment, therefore, it is described in detail in this and repeats no more for this reason.
The 3rd substrate 7 is identical with second substrate 6 and therefore it is described in detail in this and repeats no more.
This second semiconductor chip 3 be with identical shown in first preferred embodiment and also be be installed on the 3rd substrate 7 in the identic form described in first preferred embodiment and be arranged on first semiconductor chip 2.
This insulating protective layer 5 is to be formed on the upper surface 10 of substrate 1 ' semiconductor chip 2 and 3 such as can cover.
Consulting Figure 18, is the 8th preferred embodiment of the present invention, and different with the 7th preferred embodiment is that this preferred embodiment comprises four semiconductor chips that pile up setting.
Consulting Figure 19, is the 9th preferred embodiment of the present invention, and this preferred embodiment comprises a substrate 1 ', one first semiconductor chip 2, one second semiconductor chip 3, reaches a protective layer 5.
Identical described in the 5th preferred embodiment and therefore this substrate 1 ' is with it is described in detail in this and repeats no more.
This first semiconductor chip 2 and this second semiconductor chip 3 be with identical shown in second preferred embodiment and also be with pile up in the identical form described in second preferred embodiment and be arranged on the substrate 1 ', therefore, it is described in detail in this and repeats no more for this reason.
This insulating protective layer 5 is to be formed on the upper surface 10 of substrate 1 ' semiconductor chip 2 and 3 such as can cover.
Consulting Figure 20, is to be the tenth preferred embodiment of the present invention, and different with the 9th preferred embodiment is that this preferred embodiment comprises four semiconductor chips that pile up setting.
Claims (12)
1. stacking type semiconductor chip package, it is characterized in that: this stacking type semiconductor chip package comprises:
One first semiconductor chip, its have a upper surface, lower surface, and several outsides that are installed on this lower surface connect electric conductor, be to be laid with several conductive metal wires respectively on the upper surface of this first semiconductor chip and lower surface, every conductive metal wire on the lower surface of this first semiconductor chip is that the outside corresponding with connects electric conductor and be electrically connected;
One second semiconductor chip, it has the outside that a lower surface and several are installed on this lower surface and connects electric conductor, and this second semiconductor chip is installed on the upper surface of this first semiconductor chip so that the outside of this second semiconductor chip, and to connect electric conductor be to be electrically connected with corresponding conductive metal wire on the upper surface of this first semiconductor chip; And
Several conductive metal elements, each conductive metal element one of are connected electrically on the upper surface of this first semiconductor chip corresponding conductive metal wire and corresponding conductive metal wire one of on the lower surface of this first semiconductor chip.
2. stacking type semiconductor chip package as claimed in claim 1 is characterized in that: also comprise the conductive metal wire on the upper surface that is formed at this second semiconductor chip.
3. stacking type semiconductor chip package as claimed in claim 1, it is characterized in that: also comprise an installation base plate, this installation base plate has a upper surface, a lower surface, several run through the plating perforation on this upper and lower surface, the outside that reaches on several lower surfaces that are arranged at this substrate connects electric conductor, be to be formed with the conducting metal line that several plating perforations from a correspondence extend to a preposition on the upper surface of this installation base plate, be to be formed with outside that several plating perforations from a correspondence extend to a correspondence to connect electric conductor and connect the conducting metal line that electric conductor is electrically connected with outside that can be corresponding with this on the lower surface of this installation base plate, this first semiconductor chip is to be arranged on the upper surface of this installation base plate so that the outside of this first semiconductor chip to connect electric conductor be to be electrically connected with corresponding conducting metal line on the upper surface of this installation base plate.
4. stacking type semiconductor chip package, it is characterized in that: this stacking type semiconductor chip package comprises:
One first semiconductor chip, its have a upper surface, lower surface, and several be laid in conductive metal wire on this upper surface and the lower surface respectively;
One second semiconductor chip, it has the outside that a lower surface and several are installed on this lower surface and connects electric conductor, and this second semiconductor chip is installed on the upper surface of this first semiconductor chip so that the outside of this second semiconductor chip, and to connect electric conductor be to be electrically connected with corresponding conductive metal wire on the upper surface of this first semiconductor chip; And
Several conductive metal elements, each conductive metal element one of are connected electrically on the upper surface of this first semiconductor chip corresponding conductive metal wire and corresponding conductive metal wire and have and be used for the external circuit connecting portion that is electrically connected with external circuit one of on the lower surface of this first semiconductor chip.
5. stacking type semiconductor chip package as claimed in claim 4 is characterized in that: also comprise the conductive metal wire on the upper surface that is formed at this second semiconductor chip.
6. stacking type semiconductor chip package, it is characterized in that: this stacking type semiconductor chip package comprises:
One first semiconductor chip, it has a upper surface, a lower surface, and several outsides that are installed on this lower surface connect electric conductor, on the upper surface of this first semiconductor chip and lower surface is to be laid with several conductive metal wires respectively, every conductive metal wire on the lower surface of this first semiconductor chip is that the outside corresponding with connects the electric conductor electrical connection, and this first semiconductor chip has more several being used for the conduction semi-circular hole that is electrically connected to the conductive metal wire of the correspondence on this lower surface at the conductive metal wire on this upper surface along its edge setting; And
One second semiconductor chip, it has the outside that a lower surface and several are installed on this lower surface and connects electric conductor, and this second semiconductor chip is installed on the upper surface of this first semiconductor chip so that the outside of this second semiconductor chip, and to connect electric conductor be to be electrically connected with corresponding conductive metal wire on the upper surface of this first semiconductor chip.
7. stacking type semiconductor chip package as claimed in claim 6 is characterized in that: also comprise the conductive metal wire on the upper surface that is formed at this second semiconductor chip.
8. stacking type semiconductor chip package as claimed in claim 6, it is characterized in that: also comprise an installation base plate, this installation base plate has a upper surface, a lower surface, several run through the plating perforation on this upper and lower surface, the outside that reaches on several lower surfaces that are arranged at this substrate connects electric conductor, be to be formed with the conducting metal line that several plating perforations from a correspondence extend to a precalculated position on the upper surface of this installation base plate, be to be formed with outside that several plating perforations from a correspondence extend to a correspondence to connect electric conductor and connect the conducting metal line that electric conductor is electrically connected with outside that can be corresponding with this on the lower surface of this installation base plate, this first semiconductor chip is to be arranged on the upper surface of this installation base plate so that the outside of this first semiconductor chip to connect electric conductor be to be electrically connected with corresponding conducting metal line on the upper surface of this installation base plate.
9. stacking type semiconductor chip package, it is characterized in that: this stacking type semiconductor chip package comprises:
One substrate, this substrate have a upper surface, a lower surface, a rectangle hold perforation, and several run through the plating perforation on this upper and lower surface, be to be formed with several conducting metal lines respectively on this upper surface and lower surface, every conducting metal line is that the plating perforation from a correspondence extends to and one of defines in these four hole walls that hold perforation near the person;
One first semiconductor chip, it has a upper surface, a lower surface, and several outsides that are installed on this lower surface connect electric conductor, on the upper surface of this first semiconductor chip and lower surface is to be laid with several conductive metal wires respectively, every conductive metal wire on the lower surface of this first semiconductor chip is that the outside corresponding with connects electric conductor and be electrically connected, this first semiconductor chip be installed on this substrate hold in the perforation so that each the bar conducting metal line on the upper surface of this first semiconductor chip be with upper surface at this substrate on one of corresponding conducting metal line linking and each the bar conducting metal line on the lower surface of this first semiconductor chip be with lower surface at this substrate on one of corresponding conducting metal line be connected;
One second semiconductor chip, it has the outside that a lower surface and several are installed on this lower surface and connects electric conductor, and this second semiconductor chip is installed on the upper surface of this first semiconductor chip so that the outside of this second semiconductor chip, and to connect electric conductor be to be electrically connected with corresponding conductive metal wire on the upper surface of this first semiconductor chip; And
A plurality of being used for the conductive metal element that is electrically connected at the upper and lower lip-deep conducting metal line of this first semiconductor chip at the conducting metal line of the upper and lower lip-deep correspondence of this substrate.
10. stacking type semiconductor chip package as claimed in claim 9 is characterized in that: described conductive metal element is to be conducting metal glue.
11. stacking type semiconductor chip package as claimed in claim 9 is characterized in that: also comprise the conductive metal wire on the upper surface that is formed at this second semiconductor chip.
12. stacking type semiconductor chip package as claimed in claim 9, it is characterized in that: also comprise an installation base plate, this installation base plate has a upper surface, a lower surface, several run through the plating perforation on this upper and lower surface, the outside that reaches on several lower surfaces that are arranged at this substrate connects electric conductor, be to be formed with the conducting metal line that several plating perforations from a correspondence extend to a precalculated position on the upper surface of this installation base plate, be to be formed with outside that several plating perforations from a correspondence extend to a correspondence to connect electric conductor and connect the conducting metal line that electric conductor is electrically connected with outside that can be corresponding with this on the lower surface of this installation base plate, this first semiconductor chip is to be arranged on the upper surface of this installation base plate so that the outside of this first semiconductor chip to connect electric conductor be to be electrically connected with corresponding conducting metal line on the upper surface of this installation base plate.
Priority Applications (1)
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CN200510117763.5A CN100541784C (en) | 2005-11-10 | 2005-11-10 | Stacking type semiconductor chip package |
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CN200510117763.5A CN100541784C (en) | 2005-11-10 | 2005-11-10 | Stacking type semiconductor chip package |
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CN1964037A true CN1964037A (en) | 2007-05-16 |
CN100541784C CN100541784C (en) | 2009-09-16 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105144359A (en) * | 2013-03-15 | 2015-12-09 | 甲骨文国际公司 | Multi-chip module with self-populating positive features |
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2005
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105144359A (en) * | 2013-03-15 | 2015-12-09 | 甲骨文国际公司 | Multi-chip module with self-populating positive features |
CN105144359B (en) * | 2013-03-15 | 2018-09-04 | 甲骨文国际公司 | With the multi-chip module from filling positive classification |
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CN100541784C (en) | 2009-09-16 |
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