CN1963666B - 将集成电路设计转换为多个掩模的方法和系统 - Google Patents

将集成电路设计转换为多个掩模的方法和系统 Download PDF

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Publication number
CN1963666B
CN1963666B CN2006101429433A CN200610142943A CN1963666B CN 1963666 B CN1963666 B CN 1963666B CN 2006101429433 A CN2006101429433 A CN 2006101429433A CN 200610142943 A CN200610142943 A CN 200610142943A CN 1963666 B CN1963666 B CN 1963666B
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China
Prior art keywords
edge
image transfer
transfer printing
integrated circuit
shape
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Expired - Fee Related
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CN2006101429433A
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English (en)
Chinese (zh)
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CN1963666A (zh
Inventor
拉尔斯·沃尔夫冈·里耶布曼
约臣·贝恩特纳
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN2006101429433A 2005-11-09 2006-10-31 将集成电路设计转换为多个掩模的方法和系统 Expired - Fee Related CN1963666B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/164,076 2005-11-09
US11/164,076 US7346887B2 (en) 2005-11-09 2005-11-09 Method for fabricating integrated circuit features

Publications (2)

Publication Number Publication Date
CN1963666A CN1963666A (zh) 2007-05-16
CN1963666B true CN1963666B (zh) 2010-05-12

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CN2006101429433A Expired - Fee Related CN1963666B (zh) 2005-11-09 2006-10-31 将集成电路设计转换为多个掩模的方法和系统

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Country Link
US (1) US7346887B2 (enExample)
JP (1) JP4299853B2 (enExample)
CN (1) CN1963666B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090004573A1 (en) * 2007-06-29 2009-01-01 Aton Thomas J System and method for making photomasks
US7818711B2 (en) * 2007-06-29 2010-10-19 Texas Instruments Incorporated System and method for making photomasks
JP4789158B2 (ja) 2008-08-18 2011-10-12 株式会社東芝 半導体装置の製造方法、及び半導体装置
US20100127331A1 (en) * 2008-11-26 2010-05-27 Albert Ratnakumar Asymmetric metal-oxide-semiconductor transistors
US8455364B2 (en) * 2009-11-06 2013-06-04 International Business Machines Corporation Sidewall image transfer using the lithographic stack as the mandrel
US8716133B2 (en) 2012-08-23 2014-05-06 International Business Machines Corporation Three photomask sidewall image transfer method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4919768A (en) * 1989-09-22 1990-04-24 Shipley Company Inc. Electroplating process
US5342501A (en) * 1989-11-21 1994-08-30 Eric F. Harnden Method for electroplating metal onto a non-conductive substrate treated with basic accelerating solutions for metal plating
US6576976B2 (en) * 1997-01-03 2003-06-10 Integrated Device Technology, Inc. Semiconductor integrated circuit with an insulation structure having reduced permittivity
US6083275A (en) * 1998-01-09 2000-07-04 International Business Machines Corporation Optimized phase shift design migration
AT405842B (de) * 1998-06-19 1999-11-25 Miba Gleitlager Ag Verfahren zum aufbringen einer metallischen schicht auf eine polymeroberfläche eines werkstückes
US6440839B1 (en) * 1999-08-18 2002-08-27 Advanced Micro Devices, Inc. Selective air gap insulation
MY128644A (en) * 2000-08-31 2007-02-28 Georgia Tech Res Inst Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
US6660154B2 (en) * 2000-10-25 2003-12-09 Shipley Company, L.L.C. Seed layer
US6653231B2 (en) * 2001-03-28 2003-11-25 Advanced Micro Devices, Inc. Process for reducing the critical dimensions of integrated circuit device features
US6609245B2 (en) * 2001-11-29 2003-08-19 International Business Machines Corporation Priority coloring for VLSI designs
US6713396B2 (en) * 2002-04-29 2004-03-30 Hewlett-Packard Development Company, L.P. Method of fabricating high density sub-lithographic features on a substrate
AU2003256531A1 (en) * 2002-07-12 2004-02-02 Cadence Design Systems, Inc. Method and system for context-specific mask writing
US6901576B2 (en) * 2002-11-20 2005-05-31 International Business Machines Corporation Phase-width balanced alternating phase shift mask design
US7100134B2 (en) * 2003-08-18 2006-08-29 Aprio Technologies, Inc. Method and platform for integrated physical verifications and manufacturing enhancements

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2003-168640A 2003.06.13

Also Published As

Publication number Publication date
JP4299853B2 (ja) 2009-07-22
JP2007133395A (ja) 2007-05-31
CN1963666A (zh) 2007-05-16
US7346887B2 (en) 2008-03-18
US20070106972A1 (en) 2007-05-10

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Granted publication date: 20100512

Termination date: 20111031