CN1963452A - Offset current mode spectrograph for scan tunnel and microscope for scan tunnel - Google Patents
Offset current mode spectrograph for scan tunnel and microscope for scan tunnel Download PDFInfo
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- CN1963452A CN1963452A CNA2006100971970A CN200610097197A CN1963452A CN 1963452 A CN1963452 A CN 1963452A CN A2006100971970 A CNA2006100971970 A CN A2006100971970A CN 200610097197 A CN200610097197 A CN 200610097197A CN 1963452 A CN1963452 A CN 1963452A
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Abstract
This invention relates to bias current scanning channel spectrum meter or its microscopes, which is characterized by fixing probe on Z positioning device or XYZ end and sample rack onto base socket; detecting rack and sample position can be changed; the detector fixed on rack points to sample rack; the current source connects detector and sample channel to input voltage signals to buffer to output signals; the distance between sample and detector to test V-Z spectrum by alternating current source to test high voltage images by XYZ positioning device.
Description
Technical field:
The invention belongs to the scanning tunnel microscope technical field, particularly biased electrical flow pattern scanning tunnel spectrum instrument and scanning tunnel microscope.
Background technology:
According to U.S.'s " physical comment bulletin " (Physical Review Letters, 57 pages of the 49th phases of nineteen eighty-two) and " scientific instrument comment " (Review of Scientific Instrument, 2010 pages of 1987 the 58th phases) introduce, the image-forming principle of scanning tunnel microscope is: with the Z steady arm probe is pointed to and near sample surfaces form tunnel junction (probe-sample interval Z is generally less than 10 nanometers) and between the two biasing V to produce tunnel current I, drive the relative sample of probe with the XY steady arm simultaneously and do scanning motion, (this is constant height mode: go to regulate that the Z steady arm changes sample-probe spacing Z so that I keeps constant in scanning process and come imaging by the conditioning signal of Z steady arm (this is constant current mode: constantcurrent mode) constant height mode) or with I by a feedback controller by measuring the atomic arrangement image that the variation of I in scanning process obtain sample surfaces again.Also can measure the permanent high I-V curve spectrum and the permanent bias voltage I-Z spectrum of tunnel junction with scanning tunnel microscope, promptly become a scanning-tunnelling spectrometer this moment.
Scanning tunnel microscope all has been to apply bias voltage with voltage source between probe and sample since nineteen eighty-two comes out, and with tunnel current as measured signal.A significant drawback of doing like this is: because tunnel current very little (below microampere) particularly for the following weakly conducting sample of skin peace, just must use high resistance measurement or low appearance value electric capacity weak tunnel current to be converted to the voltage signal of easy measurement.But, according to " applied surface science " magazine (Applied Surface Science, 746 pages of 175-176 phases calendar year 2001) and " scientific instrument comment " (Review of Scientific Instrument, 23703 pages of 2005 the 76th phases) introduce, the stray capacitance of high resistance measurement is also bigger, can reach pico farad magnitude (10
-12F), making RC postpone to increase is that bandwidth diminishes, and causes Measuring Time long, gain raising difficulty, dropout, and signal to noise ratio (S/N ratio) reduces, the resolution variation; And the voltage noise of high resistance measurement itself is very big, has just further reduced signal to noise ratio (S/N ratio) and resolution on the output signal that is added to; If use low appearance value electric capacity to amplify weak current, according to Burr Brown ACF2101 type switch integrator (Switched Integrator) product specification (datasheet PDS-1078D) in 1994 of Texas Instruments (Texas Instrument), it is very difficult that the influence of leakage current also can make weak current measure.
But then, just illustrating a little less than the tunnel current that tunnel junction itself has very high effective resistance.According to U.S.'s " physical comment bulletin " record of (Physical Review Letters, 5321 pages of the 86th phases of calendar year 2001), the electric capacity of tunnel junction itself is very little, is about 10
-16The F magnitude is well below the stray capacitance of high resistance measurement.This explanation tunnel junction itself is exactly a device that well amplifies weak current, not only provide very high gain because of resistance very high energy, and the RC constant is low, and the bandwidth that provides is very wide.
Along with the development of nanosecond science and technology, the increasing needs that scanning tunnel microscope are applied to weakly conducting fields such as biology, semiconductor, oxide, polymer have appearred.But existing scanning tunnel microscope is limited by above-mentioned difficulties, is not suitable for above-mentioned weakly conducting field.
Summary of the invention:
The objective of the invention is to propose a kind of scanning-tunnelling spectrometer and scanning tunnel microscope of current offset, take by current source to the tunnel junction input current, and with tunnel junction voltage as output signal or imaging control signal, to improve measuring speed, signal to noise ratio (S/N ratio) and sensitivity greatly, overcome existing scanning tunnel microscope bandwidth shortcoming little and gain raising difficulty under the condition that does not increase Measuring Time.
Biased electrical flow pattern scanning tunnel spectrum instrument of the present invention, comprise: an end, specimen holder that probe carriage is fixed in the Z steady arm are fixed in pedestal, or the location swap of probe carriage and specimen holder, probe stationary is on probe carriage, and the other end of Z steady arm is fixed in described pedestal or is fixed in and makes probe point to sample on the specimen holder on the pedestal of another position-adjustable; It is characterized in that: the two poles of the earth of current source are linking probe and sample respectively, and the voltage signal of this probe and sample room is input to the input end of impact damper, provides output signal by this impact damper.
Biased electrical flow pattern scanning tunnel microscope of the present invention comprises: an end, specimen holder that probe carriage is fixed in the XYZ steady arm are fixed in pedestal, or the location swap of probe carriage and specimen holder; Probe stationary is on probe carriage, and the other end of XYZ steady arm is fixed in described pedestal or is fixed in and makes probe point to sample on the specimen holder on the pedestal of another position-adjustable; It is characterized in that: the two poles of the earth of current source are linking probe and sample respectively, and the voltage signal of this probe and sample room is input to the input end of impact damper, provides output signal by this impact damper.
The output terminal of the described impact damper in the biased electrical flow pattern scanning tunnel microscope of the present invention can also be connected to the input end of feedback controller, by the Z location of the described XYZ steady arm of output termination of this feedback controller.
Described current source in biased electrical flow pattern scanning tunnel spectrum instrument of the present invention or the biased electrical flow pattern scanning tunnel microscope can be DC current source or ac current source.
The steady arm that described Z steady arm in biased electrical flow pattern scanning tunnel spectrum instrument of the present invention or the biased electrical flow pattern scanning tunnel microscope or XYZ steady arm can use any kind; If but used the steady arm that piezoelectric makes just could the easier relative position of accurately controlling, regulate probe and sample, more stable, more reliable data would be obtained.
In biased electrical flow pattern scanning tunnel spectrum instrument of the present invention and the biased electrical flow pattern scanning tunnel microscope, the output impedance of described impact damper is good to be not more than the tunnel junction impedance, and the gain of impact damper can just can be born, its absolute value can equal 1, less than 1,, be higher than 10 but be set as greater than 1
-5For good.
Biased electrical flow pattern scanning tunnel spectrum instrument of the present invention and the described current source of biased electrical flow pattern scanning tunnel microscope can use the current source of any kind; But need for improving precision, it is good selecting the current source that can make the tunnel junction voltage signal be better than 1 microvolt for use.
During use, regulate the spacing Z of probe and sample by the Z steady arm, and tunnel junction is exactly the tunnel junction voltage that becomes with Z under the constant tunnel current at the output voltage under the current source effect, this tunnel junction voltage signal is adjusted to through signal internal resistance after the buffer buffers and is suitable for driving next stage circuit or various pen recorder, can measure the V-Z curve, this is that traditional scanning tunnel microscope is difficult for measuring.To the Z differentiate, get final product to such an extent that dV/dZ composes this V-Z curve.If use ac current source to act on tunnel junction, also can measure alternating voltage on the tunnel junction at an easy rate with the relation curve of Z, i.e. dV/dI-Z spectrum.On the basis of this basic structure, can change the Z steady arm into the XYZ steady arm, driving the XY steady arm by the XY sweep signal makes probe do scanning with respect to sample surfaces, like this, the voltage V that produces under the current source effect of tunnel junction is exactly the three-dimensional contour constant current voltage image of a sample with the distribution of XY.This tunnel junction voltage signal can drive next stage circuit or pen recorder through after the buffer buffers.On this basis, between the Z location of impact damper and XYZ steady arm, add a feedback controller again, just can go to regulate that the Z steady arm changes sample-probe spacing Z so that tunnel junction voltage is kept constant by feedback controller in scanning process with tunnel junction voltage signal through buffering, and coming imaging by the conditioning signal of Z steady arm, this has just obtained the voltage pattern pictures such as three-dimensional permanent bias current of sample.And traditional scanning tunnel microscope measurement is the map of current pictures such as three-dimensional permanent bias voltage of sample.The two is similar, it all should be atom definition, but it is high one more than the magnitude that bandwidth of the present invention is wanted, so just can under the situation of not losing Measuring Time, further improve enlargement factor, overcome in traditional scanning-tunnelling spectrometer and the scanning tunnel microscope thereof and between probe and sample, be biased the needs use high resistance measurement (stray capacitance is big, RC constant height) of this way of voltage or the shortcoming of low appearance value electric capacity (influence of leakage current is big) with voltage source.
The present invention probe to the sample surfaces scanning process in because the equivalent resistance resistance difference of the tunnel junction that is made of probe-sample at different measuring point place makes tunnel junction produce different voltage under the effect of current source.Because the resistance higher (＞1 megohm) of the equivalent resistance of tunnel junction, so the voltage on the tunnel junction also big (＞1 microvolt depends on the size of tunnel current) is the voltage signal through having amplified, easily measure or handle.This is to have utilized tunnel junction itself to have the characteristic of high value in fact, with it as amplifying the required high resistance measurement of weak current obtaining higher gain, and the equivalent capacity of having utilized tunnel junction (order of magnitude of the two is respectively 10 generally speaking than the characteristic of the little order of magnitude of stray capacitance of high resistance measurement at least
-16F and 10
-12F decides on sample and resistance type), make RC constant of the present invention than traditional scanning-tunnelling spectrometer and the RC constant in the scanning tunnel microscope thereof to magnitude when young; This has just improved bandwidth greatly, and makes that further improving gain under the prerequisite of not losing Measuring Time becomes possibility, thereby can measure more weak tunnel current, has improved the sensitivity of measuring.This is outstanding tool advantage when measuring as weakly conducting samples such as biological sample, weak semiconductor or oxide samples.In addition, another advantage of the present invention is: compose than the V-Z under the constant tunnel current I of the easier measurement of traditional scanning tunnel microscope, because the probe signals of traditional scanning tunnel microscope is a current signal, it is the function of probe-sample interval Z, it is constant could to keep I when changing Z by means of feedback controller, and its ability and precision of keeping current constant are good not as current source; And the current source among the present invention has guaranteed that tunnel current is constant, and the change of Z directly causes V to change, and the V-Z that need not use feedback controller can measure under the constant tunnel current I composes.
Along with the development of nanosecond science and technology, the increasing needs that scanning tunnel microscope are applied to weakly conducting fields such as biology, semiconductor, oxide, polymer have appearred, and this must use the very scanning tunnel microscope of high-gain and signal to noise ratio (S/N ratio).Prior art can not significantly improve the gain that weak current is measured under the prerequisite that does not prolong Measuring Time.The present invention has utilized tunnel junction can possess the characteristic of high resistance and low parasitic capacitance simultaneously, so can improve gain and bandwidth that tunnel current is measured simultaneously, is applicable to the research of weakly conducting sample.
Description of drawings:
Fig. 1 is the fixed sample formula V-Z spectrum of biased electrical flow pattern scanning tunnel spectrum instrument of the present invention, the structural principle synoptic diagram of dI/dV spectrometry.
Fig. 2 is the stationary probe formula V-Z spectrum of biased electrical flow pattern scanning tunnel spectrum instrument of the present invention, the structural principle synoptic diagram of dI/dV spectrometry.
Fig. 3 is the structural representation that constitutes scanning tunnel microscope after using the XYZ steady arm to replace the Z steady arm on Fig. 1 basis, is used for three-dimensional contour constant current voltage imaging.
Fig. 4 is the structural representation that adds the scanning tunnel microscope of feedback control system on Fig. 3 basis, is used for voltage imaging such as three-dimensional constant current.
Fig. 5 is current source of biased electrical flow pattern scanning tunnel spectrum instrument of the present invention and the structural representation that impact damper integrates.
Embodiment:
Embodiment 1: a kind of basic structure of biased electrical flow pattern scanning tunnel spectrum instrument
Present embodiment adopts the adjusting of sample being fixed, realized by traveling probe relative position between probe and the sample.
Fig. 1 has provided the structural principle synoptic diagram of present embodiment biased electrical flow pattern scanning tunnel spectrum instrument: sample 3 is fixed on the specimen holder 4, probe 1 is fixed on the probe carriage 2, probe carriage 2 is fixed on an end of Z steady arm 6, specimen holder 4 is fixed on the pedestal 5, the other end of Z steady arm 6 is fixed in described pedestal 5 or is fixed in and makes probe point to sample on the specimen holder on the pedestal of another position-adjustable, and probe 1 constitutes tunnel junction J with sample 3.The two poles of the earth of current source 7 are linked on the probe and sample of tunnel junction J by lead respectively, and the polarity of current source 7 can be exchanged.Voltage signal on the tunnel junction J is wired to the input end of impact damper 8.Current source 7 adopts DC current source, also can adopt ac current source.
Regulate the spacing Z of probe-sample during use by Z steady arm 6, and the output voltage of tunnel junction J under current source 7 effect is exactly the tunnel junction voltage that becomes with Z under the constant tunnel current, this tunnel junction voltage signal improves through driving force after impact damper 8 bufferings, can drive next stage circuit or various pen recorder, thereby measure V-Z curve spectrum.This is that traditional scanning tunnel microscope is not easy to measure, because the probe signals of traditional scanning tunnel microscope is a current signal, it is the function of probe-sample interval Z, it is constant could to keep tunnel current when changing Z by means of miscellaneous equipments such as feedback controllers, and its ability of keeping current constant is good not as current source; And the current source 7 among the present invention has guaranteed that tunnel current is constant, and the change of Z directly causes V to change, and is easy to measure after buffering.This V-Z curve can get the dV/dZ spectrum to the Z differentiate.If use ac current source to act on tunnel junction J, also can measure alternating voltage on the tunnel junction at an easy rate with the relation curve of Z, i.e. dV/dI-Z spectrum.
The present invention has abandoned in the prior art and has been biased this way of voltage with voltage source between probe 1 and sample 3, is biased electric current and use current source 7 instead between probe 1 and sample 3; What really play amplification here is tunnel junction itself, utilization be the high value of tunnel junction itself and the characteristic of low parasitic capacitance.If tunnel junction is at a certain bias voltage V
0The tunnel current that effect produces down is weak current I
0, then also can think the high value (=V of tunnel junction itself conversely
0/ I
0) can be with tunnel current from I
0Be amplified to V
0And the speed of this amplification is also fast than prior art, be far smaller than the stray capacitance that prior art is used for the high resistance measurement of amplified current because be used for the stray capacitance of the tunnel junction that amplifies among the present invention, cause RC constant of the present invention than the RC constant of prior art to order of magnitude when young.Like this, the present invention can further improve enlargement factor under the prerequisite of not losing measuring speed, improves signal to noise ratio (S/N ratio) and sensitivity.
Embodiment 2: the another kind of basic structure of biased electrical flow pattern scanning tunnel spectrum instrument
Biased electrical flow pattern scanning tunnel spectrum instrument in the present embodiment is taked stationary probe, regulates the voltage signal that relative position between sample and the probe obtains tunnel junction by mobile example.Present embodiment is compared with embodiment 1, and the position of the same sample of its probe-probe carriage assembly-specimen holder assembly is exchanged.
Fig. 2 has provided the structural representation of present embodiment biased electrical flow pattern scanning tunnel spectrum instrument: specimen holder 4 is fixed on the top of Z steady arm 6, sample 3 is fixed on the specimen holder 4, probe 1 is fixed on the probe carriage 2, probe carriage 2 is fixed on the pedestal 5, and the other end of Z steady arm 6 is fixed in and makes on the pedestal of pedestal 5 or another position-adjustable that probe points to the sample on the specimen holder.Current source 7 can adopt DC current source or ac current source.Remainder is with embodiment 1.
Using method and principle, determination step are also identical with embodiment 1.
Embodiment 3: the biased electrical flow pattern scanning tunnel microscope under the contour scan pattern
Present embodiment is that biased electrical flow pattern scanning tunnel spectrum instrument of the present invention is used for imaging under the contour scan pattern, constitute the embodiment of the biased electrical flow pattern scanning tunnel microscope under the contour scan pattern, Fig. 3 is the structural representation of this embodiment: the 6 usefulness XYZ steady arm 6B of the Z steady arm among embodiment 1 or the embodiment 2 are replaced.Remainder is with embodiment 1 or embodiment 2.Do like this and can make probe on sample surfaces, scan with the XY location of XYZ steady arm 6B, keeping under the constant situation of probe height, the voltage signal that the XY sweep signal of driving XY localizer scan adds upper bumper 8 outputs has promptly provided three-dimensional contour constant current voltage image.
In the present embodiment, when probe 1 scans on sample 3 surfaces, because the equivalent resistance resistance difference of the tunnel junction J that is made of probe-sample at different measuring point place makes tunnel junction J produce different voltage under the effect of current source 7; Because the resistance higher (＞1 megohm) of the equivalent resistance of tunnel junction J, so the voltage on the tunnel junction J also big (＞1 microvolt depends on the size of tunnel current).This is to have utilized high value equivalent resistance that tunnel junction J has itself as amplifying the required high resistance measurement of weak current in fact, and the equivalent capacity of tunnel junction J is again at least than the little order of magnitude of stray capacitance of high resistance measurement; This has just improved bandwidth greatly, and makes that further improving gain under the prerequisite of not losing Measuring Time becomes possibility, thereby can measure more weak tunnel current, has improved the sensitivity of measuring.
Embodiment 4: wait the biased electrical flow pattern scanning tunnel microscope under the voltage scanning pattern
Biased electrical flow pattern scanning tunnel microscope under the contour scan pattern of the present invention can be on the basic configuration basis of the foregoing description 3, be equipped with behind the feedback controller i.e. formation again and wait biased electrical flow pattern scanning tunnel microscope under the voltage scanning pattern, can wait under the tunnel junction voltage mode realization the scanning and the imaging of sample.The mode of connection of using feedback controller in the present embodiment is referring to Fig. 4: insert feedback controller 9 with lead between impact damper 8 in Fig. 3 and the Z of the XYZ steady arm location, the input end of this feedback controller 9 links to each other with the output terminal of impact damper 8, and the output terminal of feedback controller 9 links to each other with the Z location of XYZ steady arm.
During work, set in advance the size of the tunnel voltage between sample 3 and the probe 1, in the process of scanning, carry out small stretching in the Z direction then and regulate distance between probe 1 and the sample 3 by feedback controller 9 control XYZ steady arm 6B, regulate the size of tunnel voltage with this, thereby make tunnel voltage in scanning process, keep constant.Being used to of feedback controller 9 output controlled XYZ steady arm 6B and carries out small flexible voltage signal in the Z direction and just reflected the information of sample surfaces, thereby can be used for imaging, and this moment, imaging was the pattern picture of sample surfaces.This has just obtained the voltage pattern pictures such as three-dimensional permanent bias current of sample.And traditional scanning tunnel microscope measurement is the map of current pictures such as three-dimensional permanent bias voltage of sample.The two is similarly, all should be atom definition, but because the RC constant of the RC constant of the tunnel junction J of limiting bandwidth high resistance measurement in the prior art among the present invention, so bandwidth is higher.This also makes increases enlargement factor under the prerequisite of not losing measuring speed, further improve signal to noise ratio (S/N ratio) and resolution becomes possibility.
Embodiment 5: biased electrical flow pattern scanning tunnel spectrum instrument and scanning tunnel microscope thereof that current source and impact damper integrate
Four embodiment in front are the situations that current source separates with impact damper.Current source of the present invention and impact damper also can be one.
Present embodiment provides a kind of current source and impact damper is the example of one, as shown in Figure 5: the termination control voltage Vs of resistance R, the input end C that other end K meets operational amplifier OPA also and between the output terminal of this operational amplifier OPA inserts the tunnel junction J that is made of sample 3 and probe 1 by lead.The left and right sides polarity of this tunnel junction J can be exchanged, and this is equivalent to the tunnel junction bias voltage opposite sign of traditional scanning tunnel microscope.Another input end D of operational amplifier OPA is by lead ground connection or meet reference potential V1.
According to the short and empty disconnected principle of the void of operational amplifier OPA, the current potential of the other end K of resistance R is constant, poor in resistance R and control voltage Vs and reference potential V1 of current controlled on the tunnel junction J, and this has just formed steady current on tunnel junction J.And not only equal voltage (is reference point with V1) on the tunnel junction J from the voltage signal V of the output terminal of operational amplifier OPA output, and the voltage signal V of this output cushioned through operational amplifier OPA, was suitable for driving the lower follow-up circuit of internal resistance.So this is the example that a kind of current source and impact damper unite two into one.
Embodiment 6: other embodiment of biased electrical flow pattern scanning tunnel spectrum instrument and scanning tunnel microscope thereof
Be that probe 1 is fixed on the probe carriage 2 in the foregoing description 3,4,5, sample 3 is fixed on the specimen holder 4; Probe carriage 2 is fixed on the end of Z steady arm 6 or XYZ steady arm 6B; Specimen holder 4 is fixed on the pedestal 5.The position of this probe-probe carriage assembly and sample-specimen holder assembly also can be exchanged, and forms the frame mode that probe stationary, sample are conditioned, and can realize that equally probe does the scanning motion with respect to sample on sample surfaces.
In above embodiment, Z steady arm or XYZ steady arm have been the effect of an adjusting probe with respect to the position of sample, can use the steady arm of any kind; If but used the steady arm that piezoelectric makes just could the easier relative position of accurately controlling, regulate probe and sample, more stable, more reliable data would be obtained.
In above embodiment, the effect of impact damper is to change the internal resistance of voltage signal on the tunnel junction so that it is easy to drive next stage treatment circuit or registering instrument, so the output impedance of impact damper should be less than the tunnel junction impedance, and the gain of impact damper can just can be born, its absolute value can equal 1, less than 1 or greater than 1, be higher than 10 but should be set as
-5For good, otherwise be equivalent to amplify reduced again having gone back of tunnel junction signal later.
In above embodiment, current source can use the current source of any kind, but in view of most applications is the tunnel junction of measuring under weak current (being lower than 1 microampere) and the high resistant (being higher than 1 megohm), to make the tunnel junction voltage signal be good greater than the current source of 1 microvolt for the raising precision need be selected for use.
Claims (5)
1. biased electrical flow pattern scanning tunnel spectrum instrument, comprise: an end, specimen holder that probe carriage is fixed in the Z steady arm are fixed in pedestal, or the location swap of probe carriage and specimen holder, probe stationary is on probe carriage, and the other end of Z steady arm is fixed in described pedestal or is fixed in and makes probe point to sample on the specimen holder on the pedestal of another position-adjustable; It is characterized in that: the two poles of the earth of current source are linking probe and sample respectively, and the voltage signal of this probe and sample room is input to the input end of impact damper, provides output signal by this impact damper.
2. biased electrical flow pattern scanning tunnel microscope, comprising: an end, specimen holder that probe carriage is fixed in the XYZ steady arm are fixed in pedestal, or the location swap of probe carriage and specimen holder; Probe stationary is on probe carriage, and the other end of XYZ steady arm is fixed in described pedestal or is fixed in and makes probe point to sample on the specimen holder on the pedestal of another position-adjustable; It is characterized in that: the two poles of the earth of current source are linking probe and sample respectively, and the voltage signal of this probe and sample room is input to the input end of impact damper, provides output signal by this impact damper.
3. biased electrical flow pattern scanning tunnel microscope according to claim 2, be characterised in that the output terminal of described impact damper be connected to the input end of feedback controller, by the Z location of the described XYZ steady arm of output termination of this feedback controller.
4. biased electrical flow pattern scanning tunnel spectrum instrument according to claim 1 and 2 or biased electrical flow pattern scanning tunnel microscope are characterised in that described current source is DC current source or ac current source.
5. biased electrical flow pattern scanning tunnel spectrum instrument according to claim 1 and 2 or biased electrical flow pattern scanning tunnel microscope are characterised in that the steady arm that described Z steady arm or XYZ steady arm use piezoelectric to make.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2006100971970A CN1963452B (en) | 2006-10-31 | 2006-10-31 | Offset current mode spectrograph for scan tunnel and microscope for scan tunnel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100971970A CN1963452B (en) | 2006-10-31 | 2006-10-31 | Offset current mode spectrograph for scan tunnel and microscope for scan tunnel |
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| CN1963452B CN1963452B (en) | 2010-06-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101329248B (en) * | 2007-11-23 | 2010-12-15 | 中山大学 | Tunnel-scanning microscope capable of measuring acting force among atomics and measuring method thereof |
| CN110412488A (en) * | 2019-07-30 | 2019-11-05 | 大连海事大学 | A method of measurement magnetic microscope probe stray field strengths |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100427921C (en) * | 2005-09-12 | 2008-10-22 | 电子科技大学 | Thin-membrane section positioning method of scanning probe microscope |
| CN200989961Y (en) * | 2006-10-31 | 2007-12-12 | 中国科学技术大学 | Bias current type tunnel scanning spetrometer and tunnel flying-spot microscope |
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2006
- 2006-10-31 CN CN2006100971970A patent/CN1963452B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101329248B (en) * | 2007-11-23 | 2010-12-15 | 中山大学 | Tunnel-scanning microscope capable of measuring acting force among atomics and measuring method thereof |
| CN110412488A (en) * | 2019-07-30 | 2019-11-05 | 大连海事大学 | A method of measurement magnetic microscope probe stray field strengths |
| CN110412488B (en) * | 2019-07-30 | 2021-05-07 | 大连海事大学 | Method for measuring stray field strength of probe of magnetic microscope |
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