CN1954407A - Exposure method and method for producing device - Google Patents
Exposure method and method for producing device Download PDFInfo
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- CN1954407A CN1954407A CN200580015657.4A CN200580015657A CN1954407A CN 1954407 A CN1954407 A CN 1954407A CN 200580015657 A CN200580015657 A CN 200580015657A CN 1954407 A CN1954407 A CN 1954407A
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Abstract
Disclosed is an exposure method wherein a substrate is adequately exposed to light while maintaining a liquid in a desired state. The upper surface of a base constituting a substrate to be exposed to light via a liquid has an effective region which is covered with a photosensitive material. At least a part of the surface of the base around the effective region is covered with a first material so that the surface of the base is not in contact with the liquid around the effective region.
Description
Technical field
The present invention relates to a kind of by the exposure method and the assembly manufacture method of liquid with base plate exposure.
Background technology
Semiconductor subassembly or LCD assembly are to utilize the method for photolithography of pattern transfer on the photonasty substrate that will be formed on the light shield to make.Have at the employed exposure device of this little shadow step: in order to the light shield microscope carrier of supporting light shield, with baseplate carrier in order to support substrate, mobile one by one light shield microscope carrier in limit and baseplate carrier, the limit by projection optical system with the pattern transfer of light shield on substrate.In recent years, for the higher aggregationization of corresponding assembly pattern, and the more high-resolutionization of expectation projection optical system.The resolution of projection optical system along with employed exposure wavelength is short more, the numerical aperture of projection optical system is big more, then becomes high more.Therefore, the employed exposure wavelength of exposure device is the short wavelengthization year by year, and the numerical aperture of projection optical system also increases.Again, now the exposure wavelength of main flow is the 248nm of KrF excimer laser, but also practicability of the 193nm of short wavelength's ArF excimer laser more.Again, same with resolution when exposing, the depth of focus (DOF) is also very important.Resolution R and depth of focus δ represent with following formula respectively.
R＝k
1×λ/NA ...(1)
δ＝±k
2×λ/NA
2 ...(2)
At this, λ is an exposure wavelength, and NA is the numerical aperture of projection optical system, k
1, k
2Be to handle coefficient.By formula (1), formula (2) as can be known, in order to improve resolution R, if shorten exposure wavelength lambda, increase numerical aperture NA, then depth of focus δ will diminish.
If it is too little that depth of focus δ becomes, then with respect to the image planes of projection optical system, be difficult for the align substrates surface, the focus level during exposure actions has weak point.Therefore, shorten exposure wavelength, and enlarge the method for the depth of focus, the immersion method that for example following patent documentation 1 is disclosed with regard to essence.This immersion method is to fill up with liquid such as water or organic solvents to form liquid between the following and substrate surface of projection optical system and soak the district, (n is a liquid refractive index to utilize exposure light wavelength in the liquid to become airborne 1/n, be generally about 1.2-1.6) improve resolution, and the depth of focus is extended to about n doubly.
(patent documentation 1) international text that discloses No. 99/49504
Yet above-mentioned photonasty substrate for example is coated on photosensitive material on the base materials such as semiconductor wafer.In immersion method, though form the liquid and the substrate contacts in immersion liquid zone, the circumference of substrate has the situation that is not covered by photosensitive material.When the zone that the liquid contact is not covered by this photosensitive material, the material that then constitutes this regional substrate surface (bottom) may be dissolved in the liquid.The material that is dissolved in the liquid is the effect that produces impurity, owing to contain the liquid of this impurity, the various machines, the member that constitute substrate or exposure device is polluted, and may have influence on the exposure accuracy of assembly property or exposure device to be formed.
Again, in the exposure device that uses immersion method, form the situation that liquid soaks the district to cross over the substrate edges mode, liquid may infiltrate from being formed at substrate gap on every side, makes that the member of substrate back or maintenance substrate is polluted.
Summary of the invention
In view of this, the object of the invention is to provide a kind of exposure method, can be with liquid-retentive at expectation state, and carry out well with base plate exposure; And assembly manufacture method, use this exposure method, can make the assembly that can bring into play expected performance.
Another object of the present invention is to provide a kind of exposure method, can prevent that liquid is from being formed at crack infiltration between substrate at least a portion on every side; And assembly manufacture method, use this exposure method, can make the assembly that can bring into play expected performance.
In order to address the above problem, the exposure method among the present invention is by liquid exposure light to be shone on substrate, with this base plate exposure, it is characterized in that: at the substrate surface that constitutes this substrate, have the effective coverage with the photosensitive material lining; For this substrate surface of avoiding the outside, this effective coverage contacts with this liquid, at least a portion of this substrate surface outside this effective coverage is covered with set material.
The outside, described effective coverage comprises the circumference of this base material.
The outside, described effective coverage comprises the side of this base material.
Described substrate surface comprise the 1st with the 2nd, described the 1st bread contains the effective coverage with the lining of this photosensitive material, described the 2nd with the described the 1st in the face of to; This outside, effective coverage comprises at least a portion of the 2nd of this base material.
Described set material comprises the photosensitive material of this effective coverage that is used for being covered.
Described set material this photosensitive material that also is covered.
Described set material has liquid repellency to this liquid.
For the substance dissolves that prevents to constitute this substrate surface in this liquid, and this substrate surface in this outside, effective coverage is covered with set material.
Described substrate surface comprises the silicon substrate surface.
Described substrate surface comprises oxidation film layer.
Described substrate surface comprises metal level.
Described substrate surface comprises insulating film layer.
The outside, described effective coverage is to remove photosensitive material by the edge clean.
Exposure method among the present invention shines exposure light on the substrate that is maintained at base plate keeping device by liquid, with this base plate exposure, it is characterized in that:
This base plate keeping device is to have the par around this substrate;
Circumference at this substrate forms HMDS (hexamethyldisilazane) layer, to prevent the gap of leak of liquid to the substrate that is held in this base plate keeping device and this par.
This HMDS layer be formed at this substrate above.
This HMDS layer is formed at the side of this substrate.
This HMDS layer be formed at this substrate below.
This HMDS layer is formed at the part that this substrate circumference is subjected to the edge clean.
This HMDS layer is to form after this edge clean.
This HMDS layer is to form before this edge clean.
This HMDS layer is to form before photosensitive material sheet being formed on this substrate.
The present invention is among substrate surface, and the set zone outside the effective coverage of coming to be covered by the cover photosensitive material with set material in the outside, effective coverage, does not contact with liquid because of making base material, so can prevent to constitute the substance dissolves of substrate surface in liquid.Again, with regard to set material, use the few material of liquid influence, by this can be with liquid-retentive at expectation state, and can be well with base plate exposure.
At this, so-called " effective coverage " but be meant exposure area with the photosensitive material lining, can form the zone of the pattern of expectation precision.
In addition, the present invention forms the HMDS layer by the circumference at substrate, so at the substrate circumference, can prevent that the material of the part (bottom of HMDS layer) of substrate from being dissolved by liquid.
The present invention because of can be with liquid-retentive at expectation state with base plate exposure, so the assembly with expected performance can be provided.
Description of drawings
Fig. 1 is the structural representation of the substrate of exposure-processed object among the present invention the 1st embodiment;
Fig. 2 is the structural representation of an exposure device among the present invention;
Fig. 3 is the schematic cross-section that the present invention is used to keep the baseplate carrier of substrate;
Fig. 4 is the structural representation of the substrate of the 2nd embodiment among the present invention;
Fig. 5 is the structural representation of the substrate of the 3rd embodiment among the present invention;
Fig. 6 is the structural representation of the substrate of the 4th embodiment among the present invention;
Fig. 7 is the structural representation of the substrate of the 5th embodiment among the present invention;
Fig. 8 is the structural representation of the substrate of the 6th embodiment among the present invention;
Fig. 9 is the structural representation of the substrate of the 7th embodiment among the present invention;
Figure 10 is the structural representation of the substrate of the 8th embodiment among the present invention;
Figure 11 is used for illustrating the schematic representation of apparatus of carrying out the HMDS processing among the present invention;
Figure 12 is the flow chart that is used for illustrating the exposure method of the 8th embodiment among the present invention;
Figure 13 A is the schematic diagram that is used for illustrating the exposure method SA10 step of the 8th embodiment;
Figure 13 B is the schematic diagram that is used for illustrating the exposure method SA20 step of the 8th embodiment;
Figure 13 C is the schematic diagram that is used for illustrating the exposure method SA30 step of the 8th embodiment;
Figure 14 is the structural representation of the substrate of the 9th embodiment among the present invention;
Figure 15 is the flow chart that is used for illustrating the exposure method of the 9th embodiment;
Figure 16 A is the schematic diagram that is used for illustrating the exposure method SA10 step of the 9th embodiment;
Figure 16 B is the schematic diagram that is used for illustrating the exposure method SA20 step of the 9th embodiment;
Figure 16 C is the schematic diagram that is used for illustrating the exposure method SA30 step of the 9th embodiment;
Figure 16 D is the schematic diagram that is used for illustrating the exposure method SA32 step of the 9th embodiment;
Figure 16 E is the schematic diagram that is used for illustrating the exposure method SA33 step of the 9th embodiment;
Figure 17 is the structural representation of the substrate of the 10th embodiment among the present invention;
Figure 18 is the structural representation of the substrate of the 11st embodiment among the present invention;
Figure 19 is the structural representation of the substrate of the 12nd embodiment among the present invention;
Figure 20 is the flow chart of one of micromodule technology among the present invention.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment among the present invention is described in further detail, but protection scope of the present invention is not limited to this.
The 1st embodiment
As shown in Figure 1, substrate P has base material 1 and photosensitive material 2 in the present embodiment, and photosensitive material 2 is coated on the part of 1A above the base material 1.In the present embodiment, base material 1 comprises semiconductor wafer (silicon wafer), and substrate P is exposed according to immersion method.
The circumference 1As (the non-effective coverage 5 of top 1A) of 1A for example has wide about 3mm above the base material 1, and effective coverage 4 is arranged at 5 inboards, non-effective coverage, occupies the roughly All Ranges of the top 1A of base material 1.That is, among the 1A, except the circumference 1As of 1A above it, roughly universe is covered photosensitive material 2 on base material 1.
Photosensitive material 2, for example coat on the base material 1 with set coating processes such as spin-coating methods, but when the film of photosensitive material 2 being formed at situation on the base material 1 with set coating processes such as spin-coating methods, the non-effective coverage 5 in 4 outsides, effective coverage, for example the circumference 1As of base material 1 and side 1C also are coated with photosensitive material 2.If this part contacts with the carrying arm of conveyer (in order to the conveyance substrate P) or for the support sectors such as carrier rack that take care of substrate P in advance, then photosensitive material 2 has and peels off.Peel off when photosensitive material 2, will become foreign matter, not only pollute carrying arm or carrier, and because this foreign matter contacts with peace and quiet substrate P, pollution may enlarge again.At the circumference of base material 1, have the film phenomenon thick that photosensitive material 2 takes place than central portion again.The photosensitive material 2 of the circumference of this base material 1 is peeled off easily, and the photosensitive material 2 after peeling off becomes foreign matter, when this foreign matter attached to substrate P on the time, the pattern transfer precision is affected.At this, after with set coating process photosensitive material 2 being set on the base material 1, for example use solvent etc. to remove the processing (edge clean) of the photosensitive material 2 of circumference 1As or side 1C etc.By this, the photosensitive material 2 at circumference 1As of base material 1 (substrate P) etc. is removed.In the present embodiment, the non-effective coverage 5 on base material 1 surface comprises the zone that removes photosensitive material 2 by the edge clean.
In the following description, be formed in the set material membrane on the base material 1 (substrate P), the processing of removing the material membrane of this base material (substrate) circumference is called the edge clean.Again, for example, the situation of long-pending plural material membrane in the edge clean, comprises the processing of the circumference of at least a portion of removing plural material membrane on base material 1.
But the effective coverage 4 with photosensitive material 2 linings is meant exposed areas, can form the zone of expectation precision pattern.That is, being arranged at the photosensitive material 2 of effective coverage 4, is to be covered with set lining condition [thickness condition etc. is formed, reached to environment (temperature, the humidity) condition when comprising lining, membrance casting condition, material], can form the pattern of expectation precision.
In the present embodiment, the TSP-3A that the P6111 that photosensitive material 2 can use Tokyo to answer chemical industry limited company to make, the 1st material 3 can use Tokyo to answer chemical industry limited company to make.These photosensitive materials 2 and the 1st material 3 are when carrying out immersion exposure, and the liquid that formation liquid is soaked the district has liquid repellency.As described later, in the present embodiment, with regard to the liquid that formation liquid soaks the district, because of using pure water, so with regard to photosensitive material 2 and the 1st material 3, use material with water-repellancy.For example, liquid (pure water) LQ is the 60-85 degree to the contact angle of photosensitive material 2, and liquid (pure water) LQ is more than 90 degree to the contact angle of the 1st material 3.These photosensitive materials 2 and 3 couples of liquid LQ of the 1st material are non-solubilities, and the material few to the influence of liquid LQ.
Again, above-mentioned top coat film is to be provided with for the liquid that prevents the immersion liquid zone permeates in photosensitive material mostly, is used for preventing the residual of liquid on the substrate P but also form sometimes.Again, for example, attaching liq on the top coat film after this liquid is gasified, adheres to vestige (washmarking) even form on the top coat film, remove this top coat film behind the immersion exposure, can come along except that washmarking with the top coat film by this.Again, come along except that after the washmarking, can carry out set processed such as development treatment with the top coat film.
With regard to the 1st material 3, as above-mentioned, the resin material that the fluorine such as P6111 that can use Tokyo to answer chemical industry limited company to make are, but also can use and developer solution compatibility height, alkaline macromolecule is the resin material of principal component.Therefore, use and developer solution compatibility height, alkaline macromolecule is the situation of the resin material of principal component, can be with the top coat film with the developer solution flush away, and as using the top coat film of fluorine resin material, needn't special-purpose clean step.With regard to the 1st material 3, also can use the employed HMDS of semiconductor technology (hexamethyldisilazane: hexamethyldisilazane) again.
As above-mentioned, base material 1 comprises semiconductor wafer, and base material 1 surface comprises the silicon substrate surface.
Simple declaration forms the step of substrate P shown in Figure 1, at first, and coating photosensitive material 2 on base materials such as semiconductor wafer 1.Behind the coating photosensitive material 2, carry out the photosensitive material 2 of edge clean with the circumference 1As of removal base material 1.After the edge clean, by the resin material of fluorine system or HMDS grade in an imperial examination 1 material 3 constitute the top film (layer) form in the mode of covering photosensitive material 2.By the film (layer) that the 1st material 3 is constituted, be formed at the part of the edge clean of the circumference 1As that is subjected to base material 1.Again, impose set processing such as prebake conditions processing in substrate P after, carry out exposure-processed.
Secondly, be illustrated at the exposure device EX of the aforesaid substrate P that exposes according to immersion method, as shown in Figure 2.
Exposure device EX possesses: light shield microscope carrier MST (displaceably supporting light shield M), baseplate carrier PST (have the substrate holder PH that is used for keeping substrate P, displaceably keep substrate P), lamp optical system IL (throw light on be supported at the light shield M of light shield microscope carrier MST with exposure light EL), projection optical system PL (will through the pattern image projection of the light shield M of exposure light EL illumination in the substrate P that is supported at baseplate carrier PST), and control device CONT (action that Comprehensive Control exposure device EX is all).Comprise graticule (being formed with the assembly pattern of reduced projection on substrate P) at this so-called " light shield ".
Lamp optical system IL, throwing light on exposure light EL is held in the light shield M of light shield microscope carrier MST, and it has exposure light source, light integrator (will by the illumination homogenizing of the emitted light beam of exposure light source), collector lens (will from the exposure light EL optically focused of light integrator), relay lens system, and visual field aperture (setting the field of illumination of light shield M by exposure light EL).Set field of illumination on the light shield M is to throw light on the exposure light EL that uniform illumination distributes by lamp optical system IL.With regard to the exposure light EL that penetrates from lamp optical system IL, can use the light (g line, h line, i line) and KrF excimer laser extreme ultraviolet light (DUV light) or ArF excimer laser (wavelength 193nm) and the F such as (wavelength 248nm) that penetrate from mercury vapor lamp
2Laser (wavelength 157nm) equal vacuum ultraviolet light (VUV light) etc.
Light shield microscope carrier MST is supporting light shield M by move mode, and in the plane vertical with the optical axis AX of projection optical system PL (being in the XY plane), the energy two dimension moves and reaches towards the little rotation of θ Z direction.On light shield microscope carrier MST, be provided with moving lens 40 in order to laser interferometer 41 usefulness of measuring light shield microscope carrier MST.The position of the two-dimensional directional of the light shield M on the light shield microscope carrier MST and the anglec of rotation are measured with real-time mode by laser interferometer 41, control device CONT is according to the measurement result of laser interferometer 41, drive light shield microscope carrier driving mechanisms such as comprising linear motor, come by this light shield M that is supported at the light shield microscope carrier is positioned.
Projection optical system PL is exposed to substrate P with set projection multiplying power with the graphic pattern projection of light shield M, and it is made of a plurality of optical module that comprises optical module (lens) LS that is arranged at substrate P side leading section, and these optical modules are supported by lens barrel PK.In the present embodiment, the projection multiplying power β of projection optical system PL can be 1/4,1/5 or 1/8 reduction system.Again, projection optical system PL also can be any in times system such as grade and the amplification system.Again, but projection optical system PL does not also contain the dioptric system of reflection subassembly, also can contain the arbitrary system in the reflected refraction system that reflects assembly and reflection subassembly.The optical module LS of leading section exposes from lens barrel PK.
Baseplate carrier PST possesses Z microscope carrier (PH keeps substrate P by substrate holder) 52 and XY microscope carrier 53 (being used for supporting Z microscope carrier 52).XY microscope carrier 53 is supported on the pedestal 54.Z microscope carrier 52 be be supported at substrate holder PH substrate P can towards Z-direction, and θ X, θ Y direction (incline direction) move.XY microscope carrier 53 can move the substrate P that is held in substrate holder PH towards XY direction (direction parallel with the image planes essence of projection optical system PL) and θ Z direction by Z microscope carrier 52.Certainly Z microscope carrier and XY microscope carrier can be wholely set again.
On baseplate carrier PST (Z microscope carrier 52), be provided with moving lens 42 in order to laser interferometer 43 usefulness of measuring this baseplate carrier PST position.The two-dimensional directional position of the substrate P on the baseplate carrier PST and the anglec of rotation are measured with real-time mode by laser interferometer 43.Control device CONT is according to the measurement result of laser interferometer 43, in the two-dimensional coordinate system of laser interferometer 43 defineds, drive XY microscope carrier 53 by comprising baseplate carrier driving mechanisms such as linear motor, be supported at the X-direction of substrate P of baseplate carrier PST and the location of Y direction by this.
Exposure device EX possesses the focus detection system, for example above the disclosed substrate P, detects light from the tilted direction projection in Japanese kokai publication hei 8-37149 communique, detects the positional information above the substrate P by this.The focus detection system can obtain with respect to the Z-direction position (focal position) above the substrate P of the image planes of projection optical system PL, reach the inclination above the substrate P.Control device CONT comes the Z microscope carrier 52 of driving substrate microscope carrier PST by the baseplate carrier driving mechanism, control the position of the Z-direction position (focal position) of the substrate P that remains in Z microscope carrier 52 and θ X, θ Y direction by this, top (plane of exposure) of substrate P aimed at by projection optical system PL and the formed image planes of liquid LQ.
Exposure device EX in the present embodiment, being used for essence shortens exposure wavelength, improves resolution, and essence enlarges the depth of focus, is suitable for the liquid immersion exposure apparatus of immersion method, and it possesses liquid dipping machine structure 100, the liquid that can form liquid LQ soaks district AR2 on substrate P, as shown in Figure 3.Liquid dipping machine structure 100 possesses the ring-type nozzle member, as shown in Figure 2, is arranged at the top of substrate P (baseplate carrier PST), is provided with in the mode of the optical module PL that surrounds projection optical system PL front end; Liquid organization of supply 10, the liquid supply port 12 by being arranged at nozzle member 70 is supplied to liquid LQ on the substrate P; And liquids recovery mechanism 20, by being arranged at the liquids recovery mouth 22 of nozzle member 70, reclaim the liquid LQ on the substrate P.Liquid organization of supply 10 is used for set liquid LQ is supplied to the image planes side of projection optical system PL, and it possesses the liquid supply department 11 and supply pipe 13 (being connected the one end to liquid supply department 11) that can send liquid LQ.The other end of supply pipe 13 is connected in nozzle member 70.Liquid supply department 11 possesses the accumulator tank of accommodating liquid LQ, force (forcing) pump, and filter element etc.Again, liquids recovery mechanism 20 is used for reclaiming the liquid LQ of the image planes side of projection optical system PL, possess can withdrawal liquid LQ liquids recovery portion 21 and recovery tube 23 (being connected the one end) to liquids recovery portion 21.The other end of recovery tube 23 is connected in nozzle member 70.Liquids recovery portion 21 possesses vacuum pump equal vacuum system (suction device) for example, gas-liquid separator (in order to separate liquid LQ and the gas that is reclaimed), and accumulator tank (the liquid LQ that reclaims in order to the collecting post) etc.
The action of liquid supply department 11 is controlled by control device CONT.When being supplied to liquid LQ on the substrate P, control device CONT sends liquid LQ from liquid supply department 11, by supply pipe 13, and the internal flow path of nozzle member 70, from the liquid supply port 12 that is arranged at the substrate P top liquid LQ is supplied on the substrate P.Again, the action of the liquids recovery of liquids recovery portion 21 is controlled by control device CONT.Control device CONT can control the liquids recovery amount of time per unit by liquids recovery portion 21.Liquid LQ on the substrate P that is reclaimed from liquids recovery mouth 22 (be arranged at substrate P top) is recovered in liquids recovery portion 21 by the internal flow path and the recovery tube 23 of nozzle member 70.
Control device CONT, during the pattern image to major general's light shield M is transferred on the substrate P, by the liquid LQ that is supplied from liquid organization of supply 10, at least a portion on the substrate P of the projected area AR1 that comprises projection optical system PL local forms that the big and liquid little than substrate P soaks district AR2 than projected area AR1.Particularly, exposure device EX is between the optical module LS and substrate P of the image planes side leading section of projection optical system PL, fill up liquid LQ form liquid soak the district AR2, by liquid LQ between this projection optical system PL and substrate P and projection optical system PL, the pattern image of light shield M is projected on the substrate P, by this substrate P is exposed.
In the present embodiment, with regard to the liquid LQ that formation liquid soaks district AR2, use pure water.Even exposure light EL is the ArF excimer laser, pure water also can make it pass through.Again, pure water also can make light (g line, h line, i line) and KrF excimer laser extreme ultraviolet lights (DUV light) such as (wavelength 248nm) pass through.
The following LSA of the optical module LS of each projection optical system PL and the following 70A of nozzle member 70 are tabular surfaces, so the face of the following 70A of the following LSA of the optical module LS of these projection optical systems PL and nozzle member 70 roughly becomes unanimity.Again, baseplate carrier PST (Z microscope carrier 52) is provided with recess 50, and substrate holder PH is disposed at recess 50.In baseplate carrier PST, become tabular surface above beyond the recess 50 with the top roughly the same height of the substrate P that remains in substrate holder PH again.By this, below nozzle member 70 70A and optical module LS below LSA, and between the substrate P (baseplate carrier PST), can form liquid well and soak district AR2.Again, top 51 by being provided with, even if when the circumference to substrate P carries out immersion exposure, also liquid LQ can be remained in the image planes side of projection optical system PL, form liquid well and soak district AR2.
Again, on optical module LS surface, the liquid contact surface (comprising following LSA) that contacts of liquid LQ that soaks district AR2 with liquid has lyophily to liquid LQ.Again, in nozzle member 70, the liquid contact surface (comprising following 70A) that contacts of liquid LQ that soaks district AR2 with liquid also has lyophily to liquid LQ.For the liquid contact surface that makes above-mentioned optical module LS or nozzle member 70 forms lyophily, in the present embodiment, for example impose the lyophily processing (with MgF
2, Al
2O
3, SiO
2Be coated on this liquid contact surface Deng the lyophily material).On the other hand, top 51 couples of liquid LQ of baseplate carrier PST have liquid repellency.For top 51 of baseplate carrier PST is formed liquid repellencies, for example imposes dial liquefaction processing (with the liquid repellency material of fluorine resin material or propylene resin material etc. be coated on baseplate carrier PST top 51).At this, with regard to optical module LS, nozzle member 70, be arranged at regard to the material of baseplate carrier PST etc., use material to liquid LQ non-solubility.As above-mentioned, with regard to the material on being coated on the base material 1 that constitutes substrate P, liquid LQ had the material of liquid repellency because of being covered, so the top of substrate P also has liquid repellency to liquid LQ again.Top 51 of the top of substrate P or baseplate carrier PST formed the tool liquid repellencies, can soak district AR2 by well maintained liquid by this, and, on substrate P or baseplate carrier PST above 51 can prevent the unfavorable condition that liquid LQ is residual.
In the present embodiment, be meant the material membrane surface of the superiors in the material membrane on the top 1A that is overlayed on base material 1 above the so-called substrate P again.For example, shown in Fig. 1, top the 1st material 3 formed film surfaces of passing through of substrate P under the form on the 1st material 3 is not covered photosensitive material 2, comprise above the substrate P by photosensitive material 2 formed film surfaces.
As shown in Figure 3, substrate holder PH possesses: base component 35, have with the following 1B of the base material 1 that constitutes substrate P only from both bottom surface 35B of set a distance subtend; Surrounding wall portion 33, have be formed on the base component 35 and with the top 33A of the following 1B subtend of base material 1; And support sector 34, be formed on the bottom surface 35B of surrounding wall portion 33 inboards.Surrounding wall portion 33 forms roughly circular according to the shape of substrate P.The top 33A of surrounding wall portion 33 with the circumference 1Bs subtend of the following 1B of base material 1.Again, the top 33A of surrounding wall portion 33 is tabular surface.
The support sector 34 of substrate holder PH equally is provided with a plurality of in the inboard of surrounding wall portion 33.In the present embodiment, the support sector 34 of substrate holder PH comprises a plurality of anchors, and substrate holder PH constitutes so-called chuck (pin chuck) mechanism of selling.This pin chuck mechanism possesses attraction mechanism (possessing the mouth of attraction 41, being formed negative pressure by the space 31 that the base component 35 of substrate holder PH and surrounding wall portion 33 and substrate P surround), and space 31 is formed negative pressure, by this, adsorbs the maintenance substrate P with support sector 34.Shown in Fig. 3, it is a plurality of to attract mouth 41 equally to be provided with on the 35B of the bottom surface of base component 35.
Passing through between the recess 50 formed medial surface 50T and surrounding wall portion 33 lateral surface 33S of Z microscope carrier 52 (baseplate carrier PST), setting has both clearance C of set a distance.At the edge part of the substrate P that remains in substrate holder PH and between being arranged at above the Z microscope carrier 52 (baseplate carrier PST) around this substrate P, form gap A with distance about 0.1-1.0mm again.In the present embodiment, gap A is about 0.3mm.The external diameter of surrounding wall portion 33 is little than the external diameter of substrate P, and clearance C is big than gap A, for example is about 1.5mm.
In the present embodiment, the top 33A of surrounding wall portion 33 is tabular surface, liquid repellency material such as 33A lining fluorine resin material above it and have liquid repellency.And then in the present embodiment, among the substrate holder PH, the medial surface 50T of surrounding wall portion 33 lateral surface 33S and Z microscope carrier 52 also is covered above-mentioned liquid repellency material and has liquid repellency.And then support sector 34 surface or base component 35 surfaces that comprise bottom surface 35B also have liquid repellency.
Secondly, the exposure device EX that has above-mentioned formation at employing comes the method for exposure base P to be illustrated.
In the present embodiment, be suitable for immersion method, it is by projection optical system PL and liquid LQ, on exposure light EL irradiated substrate P, so that substrate P is exposed.When being projected to the pattern image of light shield M on the substrate P, the pattern image of the effective coverage 4 projection light shield M on substrate P.As above-mentioned,, be provided with photosensitive material 2 with the lining of set lining condition for 4 patterns that can form the expectation precision in the effective coverage.Therefore, in the pattern image of this effective coverage 4 projection light shield M, can on the base material of this effective coverage 4, form the assembly pattern of expectation precision by this.
Again, when the pattern image of 4 the circumference projection light shield M in the effective coverage, or with liquid soak district AR2 move to baseplate carrier PST top 51 on the time, as shown in Figure 3, immersion liquid zone AR2 can be disposed on the A of gap.In the present embodiment, gap A is set in above-mentioned set value (about 0.1-1.0mm), and, because of each form gap A Z microscope carrier 52 medial surface 50T and have liquid repellency with the side (being coated on the 1st material 3 of the side 1C of base material 1) of the substrate P of its medial surface 50T subtend, so can prevent really from gap infiltration liquid LQ.
Again, in state shown in Fig. 3, though soaking the liquid LQ of district AR2, liquid contacts with circumference above the substrate P, but on base material 1 among the 1A, 4 1As of outboard peripheries portion in the effective coverage, the circumference 1As of the top 1A of base material 1 contacts the 1st material 3 that is covered for avoiding with liquid LQ, so liquid LQ does not contact with base material 1.Again, even liquid LQ infiltrates from gap A, at the side 1C in 4 outsides, effective coverage of base material 1, its side 1C contacts the 1st material 3 that is covered for avoiding with liquid LQ, so liquid LQ does not contact with base material 1.And then, even the liquid LQ that takes place to be infiltrated by gap A infiltrates the situation of the following side of substrate P, because of a part (circumference 1Bs) lining the 1st material 3 of 1B below base material 1, so liquid LQ does not contact with base material 1.
Again, the liquid LQ that is infiltrated by gap A may flow into the 1st space 31 by formed gap B between the 1B below 33A on surrounding wall portion 33 and the base material 1.As shown in Figure 3, though the 1st material 3 is coated on the circumference 1Bs of following 1B, below base material 1 among the 1B with the zone of 33A subtend above the surrounding wall portion 33 of substrate holder PH, the 1st material 3 is not covered.At this, below base material 1 among the 1B with also be covered the 1st material 3 and form liquid repellency of the zone of 33A subtend above the surrounding wall portion 33 of substrate holder PH, can prevent that by this liquid LQ is by the formed gap B infiltration between the 1B below base material 1 of 33A on surrounding wall portion 33.Certainly, the universe of 1B the 1st material 3 that also can be covered below base material 1.Again, as shown in Figure 3, below base material 1 among the 1B with the zone of 33A subtend above the surrounding wall portion 33 of substrate holder PH, even the 1st material 3 is not covered, also can adjusting play B, can prevent that by this liquid LQ from infiltrating the 1st space 31 by gap B.
As described above, on base material 1 surface, it is the set zone, 4 outsides, effective coverage that is covered coated with photosensitive material 2 with the 1st material 3,4 outsides in the effective coverage, base material 1 surface that comprises 1A above each, side 1C, following 1B does not contact with liquid LQ, so can prevent to constitute the substance dissolves on substrate 1 surface in liquid LQ.In the present embodiment, when this base material 1 surface contact with liquid LQ, in liquid LQ, the material (Si) of formation silicon substrate is possible dissolved.Can be used as impurity and have an effect because of being dissolved in this material among the liquid LQ, the liquid LQ infiltration that for example ought comprise this impurity is in base material 1, will influence and be used for forming the functional layer that before had been arranged at the assembly on the base material 1, the assembly property deterioration that is produced, or impure liquid LQ residual gasification in the photo measure portion that is arranged at the not icon on the baseplate carrier PST, in its photo measure portion, can produce unfavorable conditions such as forming washmarking.Present embodiment is for avoiding contacting of contact substrate 1 and liquid LQ, in base material 1, at the outside, effective coverage lining the 1st material 3 of coating photosensitive material 2, so liquid LQ does not contact with base material 1.Therefore, can prevent that above-mentioned unfavorable condition from taking place.Again, with regard to the 1st material 3 that contacts with liquid LQ, use the few material of liquid LQ influence, the liquid LQ that liquid can be soaked district AR2 by this is maintained at expectation state, and exposure base P well.
In the above-described embodiments, for the purpose of simplifying the description, under the state of the film that forms photosensitive material 2 on the silicon substrate, be that the situation on silicon substrate surface is illustrated promptly, but also there is SiO on base material 1 surface (bottom) at base material 1 surface in 4 outsides, effective coverage again,
2Situation Deng oxide-film.Again, base material 1 surface (bottom) in 4 outsides, effective coverage, the SiO that before pre-treatment, is generated
2Deng oxide-film, SiO
2Or the situation of semiconductor films such as metal conductive films such as dielectric film, Cu or Al-Si, amorphous silicon such as SiNx or the situation that these mix.Arbitrary situation, when contact with forming the liquid LQ that liquid soaks district AR2, metal (for example silicon) material of etc.ing may be dissolved among the liquid LQ and become impurity, but as above-mentioned embodiment, with the 1st material 34 outsides, effective coverage that are covered, can prevent the dissolving of this impurity by this.
The 2nd embodiment
In the foregoing description 1, the 1st material 3 is overlayed on the top 1A of each base material 1, following 1B, is reached side 1C, as shown in Figure 4, also can not be arranged at following 1B, and only be coated on the top 1A and the side 1C of base material 1.
In the present embodiment, also the photosensitive material 2 of the circumference of substrate P is removed, after the edge clean, be formed at the part that is subjected to this edge clean by the 1st material 3 formed films (layer) by the edge clean.
The 3rd embodiment
As shown in Figure 5, can be not yet below base material 1 1B and side 1C the 1st material 3 is set, and only overlayed on the top 1A of the circumference 1As that comprises base material 1.
In the present embodiment, also remove the photosensitive material 2 of the circumference of substrate P by the edge clean, after the edge clean, the film (layer) that is made of the 1st material 3 is formed at the part that is subjected to this edge clean.
The 4th embodiment
In the above-described embodiments, the 1st material 3 is coated in the effective coverage photosensitive materials 2 of 4 linings, but as shown in Figure 6, the photosensitive material 2 that also can not be covered, 1A on base material 1, only 4 1As of outboard peripheries portion the 1st material 3 that is covered in the effective coverage.Again, with regard to regard to photosensitive material 2 that liquid LQ contacts, be to use the few material of liquid LQ influence, the liquid LQ that liquid can be soaked district AR2 by this maintains expectation state, and exposure base P well.Again, in this case, on base material 1 among the 1A, also 4 1As of outboard peripheries portion not only in the effective coverage, and side 1C and below at least one side's lining of 1B.
In the present embodiment, also remove the photosensitive material 2 of substrate P circumference by the edge clean, after the edge clean, the film (layer) that is made of the 1st material 3 is formed at the part that is subjected to this edge clean.
The 5th embodiment
With regard to the set material on lining base material 1 surface, the 1st material 3 can be covered with the 2nd material 3 ' that is different from the 1st material, as shown in Figure 7.For example, the resin material that a side of the 1st material 3 and the 2nd material 3 ' is used as fluorine system, the opposing party is used as HMDS.Certainly, with regard to the material of the non-effective coverage 5 that is coated on 4 outsides, effective coverage, be not limited to the 1st, the 2nd material 3,3 ' this 2 kind, multiple material arbitrarily can be coated on non-effective coverage 5.
In the present embodiment, also remove the photosensitive material 2 of substrate P circumference by the edge clean, after the edge clean, the film (layer) that is made of the 1st material 3 or the 2nd material 3 ' is formed at the part that is subjected to this edge clean.
The 6th embodiment
With regard to the material that is coated on 4 outsides, effective coverage, also can use the photosensitive material 2 of lining effective coverage 4, for example shown in Figure 8, the universe of the circumference 1As of 1A lining photosensitive material 2 on comprise substrate 1.In Fig. 8, when at the non-effective coverage 5 (circumference 1As) in each effective coverage 4 and these 4 outsides, effective coverage lining photosensitive material 2, can also same step, in the non-effective coverage 5 of each effective coverage 4 with these 4 outsides, effective coverage, photosensitive material 2 simultaneously roughly is covered, behind the side in effective coverage 4 and non-effective coverage 5 lining photosensitive material, at the opposing party's photosensitive material 2 that is covered, also can be respectively at each step lining photosensitive material 2.Except effective coverage 4, when also being covered photosensitive material 2 in non-effective coverage 5, the above-mentioned lining condition of above-mentioned lining condition that also can be to effective coverage 4 lining photosensitive materials 2 time with to non-effective coverage 5 lining photosensitive materials 2 time is made as the condition that differs from one another.
The 7th embodiment
As shown in Figure 9, also photosensitive material 2 can be coated on the side 1C of base material 1.And then, also photosensitive material 2 can be coated on the following 1B of base material 1.
The 8th embodiment
Illustrated as above-mentioned 1-the 5th embodiment, the film (layer) that will comprise the resin material of fluorine system or HMDS etc. is formed at the circumference (comprising top circumference and side) of substrate P, by this with reference to the explanation of Fig. 3 etc., when the substrate holder PH with baseplate carrier PST keeps this substrate P, the dissolving of the material of base material 1 in liquid LQ not only is prevented from, and can prevent that liquid LQ from leaking to substrate P and being arranged at crack A between baseplate carrier PST around this substrate top.Again, because of preventing that liquid LQ from infiltrating the following side of substrate P by the gap A between substrate P and baseplate carrier PST, so can prevent to keep well the bad situation of substrate P at substrate holder PH, or use set conveyer when substrate holder PH takes out of substrate P, the generation that the conveyer below the substrate P that can prevent to keep wetted can't keep unfavorable conditions such as this substrate P well.
Particularly HMDS is more cheap, in order to improve the adaptation of base material such as semiconductor wafer 1 and photosensitive material 2, and uses in semiconductor fabrication processes, can effectively utilize existing equipment.Again, because of HMDS has liquid repellency (water-repellancy), so will liquid can be soaked district AR2 by this and be formed on the substrate P well by above HMDS constituted layer (hereinafter referred to as the HMDS layer) the be formed at substrate P.With the HMDS layer be formed at substrate P above, also can prevent residual liquid LQ on the substrate P by this and form the generation of adhering to vestige unfavorable conditions such as (washmarkings).Again, generally speaking, in HMDS handles, because of carrying out the vaporized of HMDS, so also can be easier to form the HMDS layer at the side or the back side of base material 1 (substrate P).The HMDS layer is formed at side or following (back side) of substrate P, by this, can prevent that liquid LQ from leaking to the substrate P that remains in substrate holder PH and top 51 the gap A of baseplate carrier PST, or infiltrate the generation of the unfavorable conditions such as following side liquid LQ of substrate P.
Again, in above-mentioned 1-the 5th embodiment, on base material 1, form the film of photosensitive material 2, after carrying out the edge clean, go up formation HMDS layer at the base material 1 (substrate P) that comprises the part that imposes this edge clean, but before the edge clean, and before the film that forms photosensitive material 2 on the base material 1, on base material 1, the side, and below at least a portion can form HMDS.
As shown in figure 10, substrate P possesses base material 1, and is formed at the top 1A of this base material 1, following 1B, and the HMDS layer 7 of side 1C.On base material 1, among the 1A, form the film of photosensitive material 2 in the most of zone except circumference 1As again.Again, on base material 1 the side 1C of the circumference 1As of 1A, base material 1, and base material 1 below 1B do not form the film of photosensitive material 2.
In the present embodiment, so-called substrate P above be meant the material membrane surface (exposing face) of the superiors in the material membrane of the top 1A that is coated on base material 1.Therefore, as shown in Figure 10, comprise above the substrate P surface by photosensitive material 2 formed films, with HMDS layer 7 surface that are arranged at around it.In the present embodiment, be meant the material membrane surface (exposing face) on top layer in the material membrane of the following 1B that is coated on base material 1 below the so-called substrate P again.Therefore, shown in Figure 10, be HMDS layer 7 surface below the substrate P.Again, in the present embodiment, the side of so-called substrate P is meant the material membrane surface (exposing face) on top layer in the material membrane of the side 1C that is coated on base material 1.Therefore, shown in Figure 10, the side of substrate P is HMDS layer 7 surface.
Figure 11 is the schematic diagram that expression is formed at the HMDS layer membrane formation device 80 on the base material 1.As shown in figure 11, exposure device EX is connected in coating developing apparatus C/D.The coating developing apparatus possess apparatus for coating (being used for photosensitive material is coated on the base material 1), with developing apparatus (substrate P after the exposure-processed that is used for developing).Membrane formation device 80 is arranged at coating developing apparatus C/D.Membrane formation device 80 has: confined chamber 81, holding device 82 (be arranged at confined chamber 81 inside, be used for keeping base material 1), and gas supply device 83 (gasiform HMDS is supplied to confined chamber 81 inside).Holding device 82 can be with base material 1 heating that is kept.Membrane formation device 80 is supplied to confined chamber 81 inside from gas supply device 83 with gasiform HMDS under base material 1 state that holding device 82 is kept.By this, base material 1 surface contacts with gasiform HMDS, forms HMDS layer 7 on base material 1 surface.As shown in figure 11, in the present embodiment, holding device 82 keeps base material in the mode that the rear side at base material 1 forms set space, not only 1A, side 1C on base material 1, and roughly form the HMDS layer at the back side of base material 1 1B comprehensively.In the following description, the processing of formation HMDS layer 7 is called the HMDS processing on base material 1.
Secondly, at the treatment step that is used for forming the substrate P shown in Figure 10, shown in Figure 12 and Figure 13 A-Figure 13 C:
At first, by membrane formation device illustrated in fig. 11 80, each 1A above the base material 1, below 1B, and side 1C form HMDS layer 7 (step SA10).Base material 1 surface contact with gasiform HMDS, by this, because of formation HMDS layer 7 on base material 1, thus each 1A above the base material 1, below 1B, reach side 1C and can form HMDS layer 7 sleekly.Figure 13 A is that expression imposes the base material 1 after HMDS handles.
Secondly, on the HMDS of base material 1 layer 7, be coated with the processing (step SA20) of photosensitive material 2.By coating developing apparatus C/D, for example adopt set coating processes such as spin-coating method, on the HMDS of base material 1 layer 7, form the film of photosensitive material 2.Figure 13 B represents to be coated with the substrate P behind the photosensitive material 2.
Secondly, remove the edge clean (step SA30) of the photosensitive material 2 of circumference 1As or side 1C.By this, the circumference 1As at base material 1 (substrate P) removes photosensitive material 2.Figure 13 C is that expression imposes the cleaned substrate P in edge.
On substrate P, impose set processing (step SA40) such as prebake conditions processing again.Then, substrate P towards exposure device EX conveyance, is carried out exposure-processed (step SA50) by set handling system.
Even after carrying out the processing of edge clean or prebake conditions, the part that the circumference of substrate P imposes the edge clean is also covered by HMDS layer 7.That is,, also can not remove the HMDS layer 7 that is formed on the base material 1 even carry out edge clean or prebake conditions processing.Therefore, even after imposing its edge clean, also can keep the liquid repellency in the periphery district above the substrate P.Similarly, even after carrying out edge clean or prebake conditions processing, liquid repellency is kept in the side of substrate P or following also by 7 covering of HMDS layer.
The 9th embodiment
As shown in figure 14, substrate P also possesses: base material 1 and be formed at the top 1A of this base material 1, following 1B, and the HMDS layer 7 of side 1C.1A on base material 1 is at the film of the most of zone formation photosensitive material 2 except circumference 1As.On base material 1 the side 1C of the circumference 1As of 1A, base material 1, and base material 1 below 1B, do not form the film of photosensitive material 2.Form the film (top coat film) of the 1st material 3 in the mode of lining photosensitive material 2 again.In the present embodiment, the film of the 1st material 3 is that mode with lining photosensitive material 2 and a circumference 1As part forms.Therefore, expose HMDS layer 7 in the part of circumference 1As.The side of base material 1 1C, and base material 1 below 1B do not form the film of the 1st material 3.
Secondly, be illustrated, please refer to shown in Figure 15 and Figure 16 A-Figure 16 E at the treatment step that is used for forming substrate P shown in Figure 14:
At first, by the membrane formation device shown in Figure 11 80, each 1A above the base material 1, below 1B, and side 1C form HMDS layer 7 (step SA10).Figure 16 A represents to impose the base material 1 after HMDS handles.
Secondly, on the HMDS of base material 1 layer 7, be coated with the processing (step SA20) of photosensitive material 2.By coating developing apparatus C/D, for example adopt set coating processes such as spin-coating method, coating photosensitive material 2 on the HMDS of base material 1 layer 7.Figure 16 B represents to be coated with the substrate P behind the photosensitive material 2.
Secondly, remove the edge clean (step SA30) of the photosensitive material 2 of circumference 1As or side 1C.By this, the circumference 1As at base material 1 (substrate P) removes photosensitive material 2.Figure 16 C represents to impose the cleaned substrate P in edge.
Impose set processing (step SA31) such as prebake conditions processing in substrate P again.
Secondly, be coated with the processing (step SA32) of the 1st material 3 (on the film of the photosensitive material 2 of base material 1) in order to form the top coat film.By coating developing apparatus C/D, for example adopt set coating processes such as spin-coating method, coating the 1st material 3 on the film of the photosensitive material 2 of base material 1.Figure 16 D represents to be coated with the substrate P behind the 1st material 3.
Secondly, remove the edge clean (step SA33) of the 1st material 3 of circumference 1As or side 1C.By this, remove the 1st material 3 at the circumference 1As of base material 1 (substrate P).Figure 16 E represents to impose the cleaned substrate P in edge.
Impose set processing (step SA40) such as prebake conditions processing in substrate P again.Then, substrate P towards exposure device EX conveyance, is carried out exposure-processed (step SA50) by set conveyer.
Even after carrying out the processing of edge clean or prebake conditions, the circumference of substrate P imposes the part of edge clean also by 7 lining of HMDS layer.That is,, also can not remove the HMDS layer 7 that is formed on the base material 1 even carry out edge clean or prebake conditions processing.Therefore, even after imposing its edge clean, also can keep the liquid repellency in the periphery district above the substrate P.Similarly, even carry out after edge clean or prebake conditions handle, the side of substrate P or following also by 7 lining of HMDS layer and keep liquid repellency.
Therefore, after forming HMDS layer 7 on the base material 1, form the film of photosensitive material 2 and the situation of top coat film 3,, also the expectation district on substrate P surface (shown in Figure 14, substrate P surface roughly comprehensive) formed liquid repellency even after imposing the edge clean.
The 10th embodiment
As shown in figure 17, the All Ranges of 1B below base material 1 is not provided with HMDS layer 7, only is arranged at the zone of a part.Shown in Figure 17, HMDS layer 7 is that the mode of the circumference 1Bs of 1B below lining base material 1 forms.Form the situation of the regional 1Bn of non-formation that does not impose the HMDS processing, preferable system is for example under the state with the regional 1Bn of non-formation of the corresponding base material of lid (cover) lining 1 following 1B, confined chamber 81 internal configurations base materials 1 at membrane formation device 80 are supplied in confined chamber 81 inside with gasiform HMDS.
The 11st embodiment
As shown in figure 18, be that 1B is not provided with HMDS layer 7 below base material 1, only be arranged at side 1C and top 1A.This kind situation is not also wanted to impose under the state in the zone that HMDS handles in Yi Gai (cover) lining, and base material 1 is contacted with gasiform HMDS.
The 12nd embodiment
As shown in figure 19, also can be below base material 1 1B and side 1C HMDS layer 7 is not set, and only it is arranged at top 1A.
As previously discussed, in 1-the 12nd embodiment, because of forming the HMDS layer at base material 1, so after forming photosensitive material 2 and/or top coat film, even impose the edge clean, also can keep HMDS layer 7 in the desired region of the circumference of substrate P, can keep the liquid repellency (static contact angle that is preferably liquid LQ is more than 60 degree) of the desired region of substrate P circumference, the substrate P that forms HMDS layer 7 is used as exposure object, can prevents infiltration by this from the liquid LQ of gap A (be formed at the substrate P that remains in substrate holder PH around).Also can prevent from the dissolving of base material 1 (bottom) material of self-forming HMDS layer 7 again.
In 8-the 12nd embodiment, also can not have the function of the adaptation that improves photosensitive material 2 at the HMDS layer that is formed at base material 1 again.That is,, also can on substrate 1, form the HMDS layer for peripheral edge margin on substrate P only has liquid repellency.
Again, in 8-the 12nd embodiment, base material 1 surface that forms the HMDS layer is not limited to the silicon substrate surface, and SiO is also arranged
2Deng the situation of oxide-film, the SiO that also has before pre-treatment to be generated
2Deng oxide-film, SiO
2Or the situation of semiconductor films such as metallic conductor film, noncrystalline Si such as dielectric film Cu such as SiNx or Al-Si, the situation that also has these to mix.
Again, in 1-the 12nd embodiment, can form expectation state when liquid soaks district AR2, top 51 of baseplate carrier PST also can be consistent with the substrate P surface that remains in baseplate carrier PST.
Again, on the baseplate carrier PST of 1-the 12nd embodiment, the medial surface 50T of the top 33A of surrounding wall portion 33, lateral surface 33S, Z microscope carrier 52 and base component 35 surfaces that comprise support sector 34 surfaces and bottom surface 35B have liquid repellency, but also can not have liquid repellency, also only these parts have liquid repellency.
As above-mentioned, the liquid LQ of present embodiment is made of pure water.Pure water can be obtained easily in a large number at semiconductor fabrication factory etc., and the photosensitive material on the substrate P or optical module (lens) etc. is had or not dysgenic advantage.Again, pure water has no adverse effects to environment, and the amount of impurity is extremely low, so also can expect the effect on the optical module surface of the front end face cleaning the top of substrate P and be arranged at projection optical system PL.Again, the low situation of purity of the pure water of being supplied from factory etc., exposure device also can have ultra-pure water and make device.
Again, the refractive index n of the exposure light EL of pure water (water) about to wavelength 193nm is roughly 1.44, with regard to the light source of exposure light EL, use the situation of ArF excimer laser (wavelength 193nm), on substrate P, turned to 1/n by the short wavelength, that is, about 134nm can obtain high-resolution.And then, compare in the depth of focus and the air and be about n doubly, promptly be exaggerated 1.44 times approximately, thus ought Canon guarantee with air in employed situation with the situation of the depth of focus of degree, can more increase the numerical aperture of projection optical system PL, this point also can improve resolution.
Again, as the situation of above-mentioned use immersion method, the numerical aperture NA of projection optical system also is 0.9-1.6.Therefore, the numerical aperture NA of projection optical system becomes big situation, and tradition is used as the employed polarisation at random of exposure light and is used up, and can worsen because of the polarisation effect can cause imaging performance, so be preferably the use polarizing illumination.This kind situation, the long side direction of the line pattern of the uniformly-spaced line pattern of cooperation light shield (graticule) carries out the linear polarization illumination, also can penetrate S polarized component (TE polarized component) in a large number, promptly become the diffraction light of branch along the polarization direction of the long side direction of line pattern from the pattern of light shield (graticule).Projection optical system PL and coat between the top photosensitive material of substrate P (base material 1) and filled up situation by liquid, and projection optical system PL and coat the situation of being filled up by air (gas) between the photosensitive material above the substrate P (base material 1) and compare, because of the percent of pass on photosensitive material surface of the diffraction light of the S polarized component (TE polarized component) that helps to improve contrast uprises, even, also can obtain high imaging performance so the numerical aperture NA of projection optical system surpasses 1.0.Again, to be disclosed in the oblique incidence illumination (being bipolar illumination especially) etc. of long side direction of line pattern of Japanese kokai publication hei 6-188169 communique then more effective for appropriate combination phase shift light shield or cooperation.Be the combination of linear polarization illumination and bipolar illumination especially, uniformly-spaced the cycle direction of line pattern is not limited to the situation of a set direction, or along a set direction, the intensive situation of sectional hole patterns also has effect.For example use throw light on half-tone type phase shift light shield (pattern about the half spacing 45nm) situation of percent of pass 6% of linear polarization illumination and bipolar illumination simultaneously, on the pupil face of illuminator, suppose that with the illumination σ that forms circle of contact defined outside the two bipolar light beams be 0.95, the radius of each light beam of its pupil face is 0.125 σ, the numerical aperture of projection optical system PL is NA=1.2, then with its use at random polarisation the depth of focus (DOF) is increased about 150nm.
Again, for example the ArF excimer laser is used as exposure light, the projection optical system PL of the reduction magnification of use about 1/4, fine uniformly-spaced line pattern (for example uniformly-spaced line about 25-50nm) is exposed to the situation on the substrate P, structure (for example fine degree of pattern or the thickness of chromium) by light shield M, because guided wave (wave guide) effect, light shield M is used as the Polarizer effect, and the diffraction light of S polarized component (TE polarized component) makes the diffraction light that contrasts the P polarized component (TM polarized component) that reduces for how to penetrate from light shield M.This kind situation is preferably and uses above-mentioned linear polarization illumination, even but use up illumination light shield M with polarisation at random, big situation as the numerical aperture NA of projection optical system PL such as the 0.9-1.6 also can obtain high analysis feature.
Again, fine uniformly-spaced line pattern on the light shield M is exposed to situation on the substrate P, because wiregrating (Wire Grid) effect, P polarized component (TM polarized component) also may be big than S polarized component (TE polarized component), but for example the ArF excimer laser is used as exposure light, the projection optical system PL of the reduction magnification of use about 1/4, will the uniformly-spaced line pattern big be exposed to the situation on the substrate P than 25nm, because of the diffraction light of S polarized component (TE polarized component) penetrates from light shield M than the diffraction light of P polarized component (TM polarized component) is many, even so numerical aperture NA such as the big situation of 0.9-1.6 of projection optical system PL also can obtain high analysis feature.
And then, not only cooperate the linear polarization illumination (S polarizing illumination) of long side direction of the line pattern of light shield (graticule), as open in the Japanese kokai publication hei 6-53120 communique, in tangent line (week) direction that with the optical axis is the circle at center, the polarizing illumination method of combination linear polarization and the combination of oblique incidence illumination also produce effect.Particularly the pattern of light shield (graticule) not only extends to the line pattern of a set direction, and the mix situation of (the uniformly-spaced line pattern that the cycle direction is different mixes) of the line pattern that extends to a plurality of different directions, similarly, open in the flat 6-53120 communique disclosed as the spy, in tangent line (week) direction that with the optical axis is the circle at center, use the polarizing illumination method and the endless belt illumination of linear polarization simultaneously, by this, even the situation that the numerical aperture NA of projection optical system is big also can obtain high imaging performance.For example, when in tangent line (week) direction that with the optical axis is the circle at center, use the throw light on situation of phase shift light shield (pattern about half spacing 63nm) of half-tone type of percent of pass 6% of the polarizing illumination method of linear polarization and endless belt illumination (endless belt is than 3/4) simultaneously, suppose that illumination σ is 0.95, the numerical aperture NA=1.00 of projection optical system PL, then use at random polarisation to use up, the depth of focus (DOF) is increased about 250nm, and with the pattern about half spacing 55nm, the numerical aperture NA=1.2 of projection optical system can make the depth of focus increase about 100nm.
For example also can further be suitable for disclosed progression focus-exposure method in Japanese kokai publication hei 4-277612 communique or the TOHKEMY 2001-345245 communique again.
In the present invention, optical module LS is installed,, can carries out for example adjustment of aberration (spherical aberration, coma aberration etc.) of optical characteristics of projection optical system PL by these lens at the front end of projection optical system PL.With regard to the optical module that is installed on projection optical system PL front end, also be the optical sheet of adjustment that can be used in the optical characteristics of projection optical system PL again.Or the planopaallel plate that also exposure light EL is passed through.
Again, optical module and the big situation of the pressure between substrate P when the projection optical system PL front end that produces owing to flowing of liquid LQ though can not exchange this optical module, can firmly fix by this pressure and prevent that optical module from moving.
Again, in the present invention, be the formation of filling up between projection optical system PL and substrate P top with liquid LQ, but also can be for example on substrate P, under the state of installing by the glass cover that planopaallel plate constituted, the formation of filling up liquid LQ.
Again, projection optical system is the light path of image planes side of filling up the optical module of front end with liquid among the present invention, but as international disclose in No. 2004/019128 disclose, the projection optical system that also can adopt the optical path space of object plane side of the optical module of front end also to fill up with liquid.
Again, the liquid LQ among the present invention is a water, the also liquid beyond the water, and for example, the light source EL of exposure light EL is F
2The situation of laser, this F
2Laser can't pass through water, so with regard to liquid LQ, also can make F
2Laser passes through, and for example PFPE (PFPE) or fluorine are that the wet goods fluorine is a fluid.This kind situation, in the part that contacts with liquid LQ, for example the material with the little molecular configuration of fluorine-containing polarity forms film, uses and carries out the lyophily processing.Again, with regard to liquid LQ, in addition, also can use exposure light EL is had trafficability characteristic, refractive index is high as far as possible, to the top photosensitive material resistate (for example red deal oil) of coating projection optical system PL or substrate P (base material 1).This kind situation, surface treatment are also carried out according to the polarity of employed liquid LQ.
Again, with regard to liquid LQ, about also can using refractive index as 1.6-1.8.And then, also can form optical module LS1 than the material of quartz or fluorite height (for example more than 1.6) with refractive index.
Again, with regard to the substrate P of the various embodiments described above, the ceramic wafers that glass substrate, film magnetic head, the film magnetic head that the not only semiconductor wafer of suitable semiconductor subassembly manufacturing usefulness, and suitable display module is used used or the master (synthetic quartz, Silicon Wafer) of employed light shield of exposure device or graticule etc.
With regard to exposure device EX, except being suitable for moved further light shield M and substrate P, outside the scanning exposure apparatus (scanning stepper) with the step-scan mode of the pattern scan exposure of light shield M, also can be useful in and make under the static state of light shield M and substrate P, the pattern of light shield M is exposed by the gross, make the projection aligner (stepper) of the stepping repetitive mode that the substrate P stepping moves in regular turn.
Again, with regard to exposure device EX and Yan Yineng is suitable for, make under the roughly static state of the 1st case and substrate P, (for example use projection optical system, the refractive projection optical system that does not contain reflection subassembly with 1/8 reduction magnification), the reduced image of the 1st pattern is exposed to by the gross the exposure device of the mode on the substrate P.This kind situation, and then, also can be suitable for thereafter, making under the roughly static state of the 2nd pattern and substrate P, use this projection optical system, the reduced image of the 2nd pattern is exposed to by the gross the exposure device by the gross of the juncture on the substrate P.With regard to the exposure device of juncture and Yan Yineng is suitable for, on substrate P,, make the exposure device of the stepping juncture that substrate P moves in regular turn to the local overlapping back transfer printings of 2 patterns of major general again.
Again, the present invention also is applicable to Japanese kokai publication hei 10-163099 communique, Japanese kokai publication hei 10-214783 communique, the exposure device of disclosed pair of microscope carrier type in the Japanese Unexamined Patent Application Publication 2000-505958 communique.
And then, disclosed in Japanese kokai publication hei 11-135400 communique or the TOHKEMY 2000-164504 communique, possess baseplate carrier (in order to keep substrate) and also can be suitable for the present invention with the exposure device of measuring microscope carrier (in order to carry reference feature or the various photoelectric sensor that forms reference mark).
Again, in the above-described embodiments, though adopt the local exposure device that fills up liquid between projection optical system PL and substrate P, the present invention also can be applicable to all liquid immersion exposure apparatus of substrate surface with liquid lining exposure object.With the structure and the exposure actions of all liquid immersion exposure apparatus of the substrate surface of liquid lining exposure object, for example Japanese kokai publication hei 6-124873 communique, Japanese kokai publication hei 10-303114 communique, and No. the 5th, 825,043, United States Patent (USP) in disclosed.
With regard to the kind of exposure device EX, be not limited to exposure device with the semiconductor manufacturing usefulness of semiconductor subassembly pattern exposure on substrate P, also can be widely used in the LCD assembly manufacturing with or show to make the exposure device of usefulness, or in order to the exposure device of making film magnetic head, photography assembly (CCD) or graticule or light shield etc. etc.
Again, in the above-described embodiments, though the light that using will set light-shielding pattern (or phase shift pattern, dim light pattern) is formed on the light-transmitting substrate passes through the type light shield, but also can replace this light shield, and for example use No. the 6th, 778,257, United States Patent (USP) disclosed, according to the electronic bits of data of pattern to be exposed, form electronics light shield by pattern, reflection graphic patterns or luminous pattern.
Again, the present invention also can be applicable to, as the world disclose No. 2001/035168 disclosed, interference fringe is formed on the substrate P, use that line pattern uniformly-spaced is exposed to exposure device (microlithography system) on the substrate P.
Use the situation (with reference to USP5,623,853 or USP5,528,118) of linear motor at baseplate carrier PST or light shield microscope carrier MST, also can use the air supporting type of air bearing and use any of the floating type of magnetic of Lorentz (Lorentz) power or reluctance force.Again, the pattern that each microscope carrier PST, MST also move along guiding element, but also do not establish the no guiding element type of guiding element.
With regard to the driving mechanism of each microscope carrier PST, MST, also can use planar motors, it is to make magnet unit (two-dimensional arrangement magnet) and armature unit (two-dimensional arrangement coil) subtend, drives each microscope carrier PST, MST by electromagnetic force.This kind situation also can be connected in microscope carrier PST, MST with the either party of magnet unit and armature unit, and the opposing party of magnet unit and armature unit is arranged at the all-moving surface side that is connected in microscope carrier PST, MST.
For the reaction force that is produced that moves of avoiding baseplate carrier PST conducts to projection optical system PL, also can be as Japanese kokai publication hei 8-166475 communique (United States Patent (USP) 5,528,118) put down in writing, use the frame member that reaction force is mechanically conducted to ground (the earth).
For the reaction force that is produced that moves of avoiding light shield microscope carrier MST conducts to projection optical system PL, also can put down in writing as Japanese kokai publication hei 8-330224 communique (United States Patent (USP) 5,874,820), use the frame member that reaction force is mechanically conducted to the earth.
As previously discussed, the exposure device EX of present embodiment be will comprise the various subsystems of each cited constitutive requirements of this case patent claim keep set mechanical precision, electric precision, optical accuracy and assemble and make.In order to ensure these various precision, before and after this assembling, carry out carrying out carrying out in order to reach the adjustment of electric precision at various electrical systems at various mechanical systems at various optical systems in order to reach the adjustment of mechanical precision in order to reach the adjustment of optical accuracy.From various subsystems to the distribution that the number of assembling steps of exposure device system comprises each other mechanical connection of various subsystems, electric circuit connect, the pipe arrangement connection of pneumatic circuit etc.Before the number of assembling steps of various subsystems, each number of assembling steps of each subsystem is arranged certainly to exposure device.Various subsystems are comprehensively adjusted after the number of assembling steps of exposure device is finished, with the various precision of guaranteeing that exposure device is all.Again, the clean room that temperature and cleanliness factor etc. are managed that is manufactured on that is preferably exposure device carries out.
As shown in figure 20, semiconductor subassembly is to make via the following step, this step comprise the function of carrying out micromodule and performance design step 201, according to this design procedure make light shield (graticule) step 202, make assembly base material (substrate) step 203, adopt previous embodiment to have exposure device EX to have pattern exposure processing substrate step 204, assembly number of assembling steps (comprising cutting step, engagement step, encapsulation step) 205 to be arranged, and check step etc. 206 light shield in substrate.
Claims (22)
1, a kind of exposure method shines exposure light on substrate by liquid, with this base plate exposure, it is characterized in that: at the substrate surface that constitutes this substrate, have the effective coverage with the photosensitive material lining; For this substrate surface of avoiding the outside, this effective coverage contacts with this liquid, at least a portion of this substrate surface outside this effective coverage is covered with set material.
2, the exposure method described in claim 1 is characterized in that: the outside, described effective coverage comprises the circumference of this base material.
3, the exposure method described in claim 2 is characterized in that: the outside, described effective coverage comprises the side of this base material.
4, as any described exposure method in the claim 1 to 3, it is characterized in that: described substrate surface comprise the 1st with the 2nd, described the 1st bread contains the effective coverage with the lining of this photosensitive material, described the 2nd with the described the 1st in the face of to; This outside, effective coverage comprises at least a portion of the 2nd of this base material.
5, as any described exposure method in the claim 1 to 4, it is characterized in that: described set material comprises the photosensitive material of this effective coverage that is used for being covered.
6, as any described exposure method in the claim 1 to 4, it is characterized in that: described set material this photosensitive material that also is covered.
7, as any described exposure method in the claim 1 to 6, it is characterized in that: described set material has liquid repellency to this liquid.
8, as any described exposure method in the claim 1 to 7, it is characterized in that: for the substance dissolves that prevents to constitute this substrate surface in this liquid, and this substrate surface in this outside, effective coverage is covered with set material.
9, as any described exposure method in the claim 1 to 8, it is characterized in that: described substrate surface comprises the silicon substrate surface.
10, as any described exposure method in the claim 1 to 9, it is characterized in that: described substrate surface comprises oxidation film layer.
11, as any described exposure method in the claim 1 to 10, it is characterized in that: described substrate surface comprises metal level.
12, as any described exposure method in the claim 1 to 11, it is characterized in that: described substrate surface comprises insulating film layer.
13, as any described exposure method in the claim 1 to 12, it is characterized in that: the outside, described effective coverage is to remove photosensitive material by the edge clean.
14, a kind of exposure method shines exposure light on the substrate that is maintained at base plate keeping device by liquid, with this base plate exposure, it is characterized in that:
This base plate keeping device is to have the par around this substrate;
Circumference at this substrate forms HMDS (hexamethyldisilazane) layer, to prevent the gap of leak of liquid to the substrate that is held in this base plate keeping device and this par.
15, the exposure method described in claim 14 is characterized in that: this HMDS layer be formed at this substrate above.
16, the exposure method described in claim 14 or 15, it is characterized in that: this HMDS layer is formed at the side of this substrate.
17, as any described exposure method in the claim 14 to 16, it is characterized in that: this HMDS layer be formed at this substrate below.
18, as any described exposure method in the claim 14 to 17, it is characterized in that: this HMDS layer is formed at the part that this substrate circumference is subjected to the edge clean.
19, the exposure method described in claim 18 is characterized in that: this HMDS layer is to form after this edge clean.
20, the exposure method described in claim 18 is characterized in that: this HMDS layer is to form before this edge clean.
21, the exposure method described in claim 20 is characterized in that: this HMDS layer is to form before photosensitive material sheet being formed on this substrate.
22, a kind of assembly manufacture method is characterized in that, this assembly is to use in the claim 1 to 21 any one exposure method to make.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP212756/2004 | 2004-07-21 | ||
| JP2004212756 | 2004-07-21 | ||
| JP2005190728 | 2005-06-29 | ||
| JP190728/2005 | 2005-06-29 | ||
| PCT/JP2005/013311 WO2006009169A1 (en) | 2004-07-21 | 2005-07-20 | Exposure method and method for producing device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102124338A Division CN101373337A (en) | 2004-07-21 | 2005-07-20 | Exposure method, device manufacturing method, substrate and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1954407A true CN1954407A (en) | 2007-04-25 |
| CN1954407B CN1954407B (en) | 2010-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2005800156574A Expired - Fee Related CN1954407B (en) | 2004-07-21 | 2005-07-20 | Exposure method and method for producing device |
| CNA2008102124338A Pending CN101373337A (en) | 2004-07-21 | 2005-07-20 | Exposure method, device manufacturing method, substrate and manufacturing method thereof |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102124338A Pending CN101373337A (en) | 2004-07-21 | 2005-07-20 | Exposure method, device manufacturing method, substrate and manufacturing method thereof |
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| CN (2) | CN1954407B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102323725A (en) * | 2007-11-06 | 2012-01-18 | Asml荷兰有限公司 | Substrate and preparation method thereof, device making method, seal coating applicator and measuring equipment thereof |
| CN102446805A (en) * | 2010-10-14 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing particle defects at edges of wafers |
| CN113823549A (en) * | 2020-06-19 | 2021-12-21 | 中国科学院微电子研究所 | Method for manufacturing semiconductor structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108732870B (en) * | 2018-04-26 | 2020-12-25 | 上海华力微电子有限公司 | Method for measuring input reproducibility of silicon wafer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1245668C (en) * | 2002-10-14 | 2006-03-15 | 台湾积体电路制造股份有限公司 | Exposure system and method thereof |
-
2005
- 2005-07-20 CN CN2005800156574A patent/CN1954407B/en not_active Expired - Fee Related
- 2005-07-20 CN CNA2008102124338A patent/CN101373337A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102323725A (en) * | 2007-11-06 | 2012-01-18 | Asml荷兰有限公司 | Substrate and preparation method thereof, device making method, seal coating applicator and measuring equipment thereof |
| CN102446805A (en) * | 2010-10-14 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing particle defects at edges of wafers |
| CN113823549A (en) * | 2020-06-19 | 2021-12-21 | 中国科学院微电子研究所 | Method for manufacturing semiconductor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1954407B (en) | 2010-06-09 |
| CN101373337A (en) | 2009-02-25 |
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