CN101099224A - Exposure method, exposure apparatus, and device manufacturing method - Google Patents

Abstract

An immersion apparatus (132) is provided with a mixing mechanism for mixing a prescribed substance with a liquid supplied on a liquid-repellent film on the surface of an object (member) arranged on a light outgoing side of a projection optical system (PL) and dissolving the substance. The prescribed substance adjusts the specific resistivity of the liquid. A liquid (Lq) wherein the prescribed substance is dissolved is supplied on the liquid-repellent film and an immersion region is formed.

Description

Exposure method and exposure device and device making method

Technical field

The present invention relates to exposure method and exposure device and device making method, more specifically, relate to by liquid the exposure method of object exposure and exposure device and the device making method that in photo-mask process, uses above-mentioned exposure method and exposure device.

Background technology

In the past, in the photo-mask process of the electronic device of making semiconductor element (integrated circuit etc.), liquid crystal display cells etc., mainly use with lower device, that is: by optical projection system the pattern image of mask (or mother matrix) is transferred to the reduced projection exposure device (so-called stepping exposure device) of the stepping repetitive mode of a plurality of shooting areas on the irritability materials such as the wafer that is coated with resist (inductive material) or glass plate (below be referred to as " wafer ") respectively; Or the projection aligner of step-scan mode (so-called scanning stepper (being also referred to as scanner)) etc.

In this projection aligner, granular along with the pattern due to the Highgrade integration of integrated circuit, all require to have higher exploring power (exploring degree) every year, recently, as shorten in fact exposure wavelength and with air in compare the method for increase (expansion) depth of focus, utilize the exposure device of immersion method to receive publicity.Utilize the exposure device of immersion method as this, known have the device that exposes under the states of liquid with partial stowage between the following and wafer surface of projection optical system such as water or organic solvent (for example, with reference to following patent documentation 1).In the exposure device of in this patent documentation 1, putting down in writing, the wavelength of the exposure light of utilization in liquid is 1/n times of (n is liquid refractive index and is generally about 1.2～1.6) this fact at the air medium wavelength, the exploring degree is improved, and the projection optical system (suppose this projection optical system can make) that obtains the exploring degree identical with its exploring degree with not using immersion method is compared, depth of focus can expand n to doubly, promptly with in the air compares depth of focus and can expand n in fact to doubly.

Yet, in above-mentioned immersion exposure device, on the object (parts) of irradiation exposure light, be formed with under the state in immersion liquid zone, carry out the various instrumentations relevant with exposure.

And, in the immersion exposure device, pure water has been proposed as an example of liquid.This is because pure water has the following advantages, that is: can obtain easily and in large quantities in semiconductor fabrication factory etc., and can not produce harmful effect to photoresist on the wafer and optical lens etc.

Yet, because the resistivity of pure water is higher, so can produce static because of the friction of pipe arrangement, nozzle etc., with this with electric pure water on object (parts), formed immersion liquid when zone, at least one in the film on this object (parts) and this object (parts) surface waits possible charged.At this moment, having formed the film on object (parts) surface in this immersion liquid zone may be damaged.The breakage of this film will become inhomogeneities, and the main cause of washmarking (watermark) etc. of the optical characteristics that produces this damaged portion and other parts, and its possibility of result causes the reduction of instrumentation precision.And charged because of this, foreign matter is attracted to the surface of object (parts), and liquid (pure water), wafer etc. are by this foreign substance pollution, thereby also defectives such as ill-exposed may take place.

And, with this with electric pure water on the object (for example, wafer) of exposure, formed under the situation in immersion liquid zone picture, the film on the object (wafer) (etchant resist and/or external coating) may be charged.At this moment, the film on the object (wafer) (etchant resist and/or external coating) produces breakage, reformation etc., might become the reason that produces defective.

And, in exposure to the object (wafer) of picture with under the electric situation, foreign matter is attracted to the surface of object (wafer), liquid (pure water), exposure are polluted the object (wafer) of picture etc., also might take place by defective etc. cause ill-exposed.

Patent documentation 1: the international brochure that discloses No. 99/49504

Summary of the invention

The present invention In view of the foregoing forms, if from first viewpoint, then it provides a kind of exposure method, this method is the exposure method that object is exposed by liquid, it comprises: the regulation material that dissolving is adjusted the resistivity of this liquid in liquid is fed to the liquid that is dissolved with this regulation material on the film that forms on the above-mentioned object and forms the operation in immersion liquid zone; Be radiated at exposure light on the above-mentioned object and expose by aforesaid liquid, and form the operation of predetermined pattern.

In view of the above, the dissolving by the regulation material reduces the resistivity of liquid, utilizes the liquid that this resistivity reduced and can be formed in and form the immersion liquid zone on the film that forms on the object.Therefore, can prevent or suppress the charged of liquid effectively, and can suppress to be formed with film generation damage in insulation on the object in immersion liquid zone effectively.Thereby, by being prevented from or having suppressed this charged liquid effectively, be radiated at exposure light on the object and expose, and form predetermined pattern, thus can be for a long time and on object, form pattern accurately.

If the present invention is from second viewpoint, then it provides first exposure device, this device is by optics and liquid, exposing light beam illuminating is exposed to object and to above-mentioned object, on this object, form predetermined pattern thus, and this device possesses: transducer, and it accepts the light with the identical wavelength of exposing light beam by the lyophoby film of the parts surface of the light emitting side that is disposed at above-mentioned optics and the liquid on this lyophoby film; Liquid-immersion device, it has the mechanism of sneaking into of sneaking in the liquid on being fed to above-mentioned lyophoby film and dissolving regulation material that the resistivity of this liquid is adjusted, and the liquid that will be dissolved with this regulation material is fed on the above-mentioned lyophoby film, and forms the immersion liquid zone.

In view of the above, liquid-immersion device possesses in the liquid of supplying on the lyophoby film of the parts surface of the light emitting side that is disposed at optics, sneak into and dissolve the mechanism of sneaking into of regulation material that the resistivity of this liquid is adjusted, and the liquid that will be dissolved with this regulation material is fed on the lyophoby film and forms the immersion liquid zone.Therefore, can reduce the resistivity of liquid, can prevent or suppress the charged of liquid effectively, and can suppress to be formed with the lyophoby film generation damage in insulation in immersion liquid zone effectively.Thereby, can pass through transducer, carry out high-precision instrumentation chronically, by adopt this instrumentation result and by liquid with exposing light beam illuminating on object and expose, can carry out high-precision exposure chronically thus.

If the present invention is from the 3rd viewpoint, then it provides second exposure device, and this device exposes exposing light beam illuminating by liquid to object and to above-mentioned object, forms predetermined pattern thus on this object, it possesses: the object microscope carrier, and it places above-mentioned object; Liquid-immersion device, it has in the liquid of supplying on the formed regulation film on the above-mentioned object on being positioned over above-mentioned object microscope carrier, sneak into and dissolve the mechanism of sneaking into of regulation material that the resistivity of this liquid is adjusted, and the aforesaid liquid that will be dissolved with this regulation material is fed on the above-mentioned film, and forms the immersion liquid zone.

In view of the above, liquid-immersion device possesses in the liquid of supplying on the formed regulation film on the object on being positioned over the object microscope carrier, sneak into and dissolve the mechanism of sneaking into of regulation material that the resistivity of this liquid is adjusted, and, be fed to the liquid that is dissolved with this regulation material on the above-mentioned film and form the immersion liquid zone.Therefore, on the formed film on the object, the liquid that has reduced with resistivity forms the immersion liquid zone.Its result can prevent or suppresses the charged of liquid effectively, and can suppress to be formed with the membrane element generation damage in insulation on the object in immersion liquid zone effectively.Thereby, by preventing or suppressed this charged liquid effectively, exposing light beam illuminating on object and expose, and is formed predetermined pattern, can on object, form pattern accurately thus.

In addition, in photo-mask process, the exposure method of the application of the invention can form pattern accurately on object.Thereby, be the device making method that comprises following photo-mask process if the present invention from the 4th viewpoint, then also can be described as, that is: comprise that the exposure method of the application of the invention exposes object, come on above-mentioned object, to form the photo-mask process of device pattern.In addition, in photo-mask process, any one in first, second exposure device of the application of the invention can form pattern accurately on object.Thereby, if the present invention is from the 5th viewpoint, then also can be described as is the device making method that comprises following photo-mask process, comprises any one that use in first, second exposure device of the present invention that is:, comes to form on object the photo-mask process of device pattern.

If the present invention is from the 6th viewpoint, then it provides a kind of device making method, it is included in the exposure device that is connected to lining processor, by liquid object is exposed, on object, form the photo-mask process of device pattern, the method is characterized in that, soak by the object before moving in the above-mentioned exposure device with conductive liquid, and remove above-mentioned object with electric charge.

In view of the above, before moving into exposure device, owing to carry out the electricity that goes of object, be adsorbed in object, prevent the ill-exposed etc. of object so can suppress foreign matter.

Description of drawings

Fig. 1 is the figure of formation that represents the exposure device of an execution mode briefly.

Fig. 2 is the vertical view of the bearing table device of Fig. 1.

Fig. 3 is that express liquid should be given the figure of the formation of device briefly.

Fig. 4 is the vertical view of expression Metering measuring table.

Fig. 5 is near the longitudinal sectional view of the Metering measuring table the expression illumination display 122.

Fig. 6 is the block diagram of main composition of control system of the exposure device of an execution mode of expression.

Embodiment

Below, based on Fig. 1～Fig. 6 an embodiment of the invention are described.

In Fig. 1, represented the formation of the exposure device 100 that an execution mode relates to briefly.This exposure device 100 is scanning exposure apparatus of step-scan mode, promptly so-called scanner.

Exposure device 100 possesses: illuminator ILS; Mother matrix microscope carrier RST, it keeps mother matrix R and in the scanning direction of regulation (here, the interior left and right directions of paper that is made as among Fig. 1 is a Y direction) go up and move, wherein, mother matrix is the mask that is thrown light on by the exposure light IL as energy beam from this illuminator ILS; Projecting cell PU, it exposure that comprises that projection is penetrated from mother matrix R on wafer W projection optical system PL of illumination light IL; Bearing table device 150, it comprises as the wafer carrying bench WST of the object microscope carrier of placing wafer W and the employed instrumentation microscope carrier of the instrumentation MST that is used for exposing; And their control system etc.

As the light source that is equipped on illuminator ILS, it is ArF excimer laser light source (output wavelength 193nm) that one of them example is to use the light-pulse generator of light in the vacuum ultraviolet (VUV) zone of emission wavelength 200nm～170nm.

And illuminator ILS comprises: the beam shaping optical system, energy coarse adjustment device, light integrator (equalizer or homogenizer), illuminator aperture stop plate, beam splitter, relay lens, mother matrix baffle plate, the light path that concern configuration with the position of regulation are crooked with speculum and collector lens (all not shown) etc.In addition, about the function of the formation of illuminator ILS and each optics etc., be disclosed in for example international disclosing in No. 2002/103766 brochure etc.

On above-mentioned mother matrix microscope carrier RST, for example be fixed with the mother matrix R that on its pattern plane (below among Fig. 1), is formed with circuit pattern etc. by vacuum suction.Mother matrix microscope carrier RST, for example by comprising the mother matrix microscope carrier drive system 55 of linear motor etc., can small driving in the XY plane, and can drive in the sweep speed that go up with regulation the scanning direction (being Y direction for the left and right directions in the paper among Fig. 1 here) of regulation.

For the position (comprise rotation around Z axle) of mother matrix microscope carrier RST in the microscope carrier all-moving surface, utilize the mother matrix laser interferometer (below, be called " mother matrix interferometer ") 53, and, for example often detect with the resolution capability about 0.5～1nm by moving lens 65 (be provided with in fact have and have X moving lens with the reflecting surface of X-direction orthogonal) with the Y moving lens of the reflecting surface of Y direction orthogonal.The instrumentation value of this mother matrix interferometer 53 is sent to main control unit 50, in the main control unit 50, based on the instrumentation value of this mother matrix interferometer 53, and control the position (and speed) of X-direction, Y direction and the θ z direction (around the direction of rotation of Z axle) of mother matrix microscope carrier RST by mother matrix microscope carrier drive system 55.

Above mother matrix R, separate predetermined distance in X-direction and be provided with a pair of mother matrix alignment detection system RAa, RAb, this mother matrix alignment detection system RAa, RAb are made of TTR (the Through The Reticle) alignment system of the light that has used exposure wavelength, and are used for observing a pair of mother matrix alignment mark and corresponding with it a pair of reference mark of being located on the reference mark plate FM on the instrumentation microscope carrier MST (with reference to Fig. 2 etc.) (hereinafter referred to as " first reference mark ") on the mother matrix R simultaneously by projection optical system PL.As these mother matrix alignment detection systems RAa, RAb, for example use the system that reaches the formation that disclosed content is identical in the 5th, 646, No. 413 specifications of United States Patent (USP) corresponding with it etc. with Japanese patent laid-open 7-176468 communique.Within the scope that the domestic law of the designated state of appointment (or selected state of selecting) allows in the border application, quote disclosed content in above-mentioned communique and the United States Patent (USP) home, and as the part of the record of this specification.

Above-mentioned projecting cell PU in Fig. 1, be configured in mother matrix microscope carrier RST below.Projecting cell PU comprises: lens barrel 140, remain on the projection optical system PL that a plurality of optical elements in this lens barrel 140 constitute by the position relation with regulation.As projection optical system PL, for example use the dioptric system that constitutes by a plurality of lens (lens element) that have at the common optical axis AX of Z-direction.This projection optical system PL for example at the telecentric iris of both sides, has the projection multiplying power (for example 1/4 times, 1/5 times or 1/8 times) of regulation.Therefore, when being used to when the illumination light IL of lamp optical system 12 throws light on to the field of illumination LAR on the mother matrix R, by having passed the illumination light IL of this mother matrix R, by projection optical system PL (projecting cell PU), the reduced image (reduced image of the part of circuit pattern) of the circuit pattern of the mother matrix R in the IAR of this field of illumination is formed on zone (hereinafter referred to as " the exposure area ") IA that the above-mentioned field of illumination IAR conjugation on the wafer W of resist (inductive material) is arranged with surface applied.In addition, in the present embodiment, constitute the terminal optical element 191 that leans on image planes side (wafer side) most of projection optical system PL, be lens, but also can be the planopaallel plate of no refracting power with refracting power.

And, in a plurality of lens that constitute projection optical system PL, specific a plurality of lens, based on instruction from main control unit 50, by 52 controls of imaging characteristic correcting controller, can adjust the optical characteristics (comprising imaging characteristic) of projection optical system PL, for example multiplying power, distortion, coma aberration and curvature of the image (comprising that image planes tilt) etc.

In addition, in the exposure device 100 of present embodiment, owing to be suitable for the exposure of immersion method as described below, so along with numerical aperture NA increases in fact, the aperture of mother matrix side also increases.Therefore, in the dioptric system that only is made of lens, be difficult to satisfy Petzval's condition, there is the tendency that maximizes in projection optical system.For fear of the maximization of this projection optical system, also can use the reflected refraction system (catadioptric system) that comprises speculum and lens.

In addition, in the exposure device 100 of present embodiment, constitute projection optical system PL be by the terminal optical element of image planes side (wafer W side) lens (hereinafter referred to as " front lens ") 191 near, be provided with the liquid supply nozzle 131A and the liquids recovery nozzle 131B of a part that constitutes liquid-immersion device 132.

At aforesaid liquid supply nozzle 131A place, be connected with the one end and be connected to liquid supplying apparatus 138 (diagram not among Fig. 1, with reference to Fig. 6) the supply pipe 78 (diagram not among Fig. 1, Fig. 6 of a part, with reference to Fig. 3) the other end, reclaim nozzle 131B place at aforesaid liquid, be connected with the other end that does not have illustrated recovery tube that the one end is connected to liquid withdrawal system 139 (not illustrating among Fig. 1, with reference to Fig. 6).

In the present embodiment, the liquid Lq (with reference to Fig. 1) that uses of immersion liquid is to use the pure water that ArF excimer laser (light of wavelength 193nm) passes and the liquid of making.Pure water has the following advantages, and is easy to a large amount of acquisitions in semiconductor fabrication factory etc. that is:, and less to the harmful effect of resist on the wafer W and optical lens etc.

The formation of express liquid feeding mechanism 138 example among Fig. 3.As shown in Figure 3, liquid supplying apparatus 138 possesses: pure water supply pipe 84, one end are connected in factory's pipe arrangement of the pure water of semiconductor fabrication factory, and the other end is connected in the double CO that makees the jar of liquid ₂One end of dissolving tank 82; Flow control electromagnetically operated valve 86A, it is located at this pure water supply pipe 84 midway; CO ₂Supply pipe 88, it connects above-mentioned CO ₂One end of dissolving tank 82 and do not have illustrated C _O2 jars; Flow control electromagnetically operated valve 86B, it is located at this CO ₂Supply pipe 88 midway; Supply pipe arrangement 90, the one end is connected in above-mentioned CO ₂The other end of dissolving tank 82 (with pure water supply pipe 84 opposition sides); Fluid temperature is reconciled mechanism 72, and the one end is connected in the other end of this supply pipe arrangement 90, and carries out the temperature adjustment of liquid; Be located at the force (forcing) pump midway 74 and the resistrivity meter 76 of this supply pipe arrangement 90; Supply pipe 78, one end are connected in the other end that the aforesaid liquid temperature is reconciled mechanism 72, and are provided with liquid supply nozzle 131A at the other end; Fluid temperature adjusting mechanism 72; Flow control electromagnetically operated valve 86A, 86B; Force (forcing) pump 74; Be connected with the controller 80 of resistrivity meter 76 grades.

Controller 80 makes force (forcing) pump 74 action based on the indication from main control unit 50, and in this action, to resistrivity meter 76 instrumentations from CO ₂The resistivity value of the liquid of dissolving tank 82 (pure water of dissolved carbon dioxide) is monitored, and simultaneously flow control is controlled with electromagnetically operated valve 86A, 86B, and is made this resistivity value by instrumentation become value in the prescribed limit.Thus, at CO ₂The inside of dissolving tank 82 is from CO ₂The carbon dioxide (CO2) of jar supply is blended in the pure water by the supply of factory pipe arrangement, and dissolving, and generates liquid (pure water, carbonated water) the strictly speaking Lq of desirable resistivity value.That is, in the present embodiment, in pure water, sneak into the carbon dioxide that makes the resistivity reduction and make it dissolving, and it is fed on Metering measuring table MTB or the wafer station WTB by liquid supply nozzle 131A as liquid Lq.In addition, about in pure water, sneaking into (dissolving) carbon dioxide (carbonic acid gas), can adopt in pure water the mode of direct injecting carbon dioxide or in pure water, sneak into the variety of ways such as mode of carbon dioxide by hollow-fibre membrane.In addition, also can will comprise the air dissolves of carbon dioxide in pure water.

And, under the indication of controller 80, utilize fluid temperature to reconcile the temperature that mechanism 72 is adjusted into the temperature of this liquid Lq and take in the interior temperature same degree of the chamber (not have diagram) of exposure device main body.Here, controller 80 by adjusting the aperture of flow control with electromagnetically operated valve 86A, 86B, is adjusted the flow via the liquid Lq of liquid supply nozzle 131A supply under the state of the ratio of the flow of keeping pure water and carbon dioxide.Wherein, can certainly near the inside of fluid temperature adjusting mechanism 72 or its, be provided with flow control valve, adjust the temperature and the flow of liquid.

Aforesaid liquid retracting device 139 comprises: the jar of liquid and suction pump and the valve etc. that is used to control recovery by the liquid of recovery tube/stop.As valve, preferably with the valve of aforesaid liquid feeding mechanism 138 sides use traffic control valve accordingly.

The refractive index n of the relative ArF excimer laser of pure water roughly is 1.44.In this pure water, the wavelength of illumination light IL is shortened into the about 134nm of 193nm * 1/n=.Under the situation of present embodiment, owing to use the aqueous solution that is dissolved with above-mentioned carbon dioxide as liquid Lq, so it is strict, difference according to the ratio of the carbon dioxide of wherein sneaking into, the refractive index difference of pure water, but because the ratio of sneaking into of carbon dioxide is less, so the refractive index of the relative ArF excimer laser of liquid Lq and above-mentioned numerical value difference are little.

The liquid-immersion device 132 that comprises aforesaid liquid supply nozzle 131A and aforesaid liquid recovery nozzle 131B is controlled (with reference to Fig. 6) by main control unit 50.Main control unit 50 is fed to liquid Lq between front lens 191 and the wafer W by liquid supply nozzle 131A, and by liquids recovery nozzle 131B, from withdrawal liquid Lq between front lens 191 and the wafer W.At this moment, main control unit 50 is controlled, and makes between front lens 191 and wafer W by the amount of the liquid Lq of liquid supply nozzle 131A supply, equates all the time with amount by the liquid Lq of liquids recovery nozzle 131B recovery.Thereby, can between front lens 191 and wafer W, keep certain amount of fluid Lq (with reference to Fig. 1).At this moment, the liquid Lq that is held between front lens 191 and the wafer W exchanges always.

In addition, under the situation below instrumentation microscope carrier MST is positioned at projecting cell PU, also can be with similarly above-mentioned, fill liquid Lq between Metering measuring table MTB and front lens 191.

In addition, in the above description,, liquid supply nozzle and liquids recovery nozzle are respectively arranged with one, but are not limited thereto for simplifying this explanation, for example, as the world disclose No. 99/49504 brochure disclosed, also can adopt formation with a plurality of nozzles.And liquid-immersion device 132 also can adopt european patent application to disclose the 1st, 598, No. 855 communiques or the international disclosed formations such as brochure that disclose No. 2004/090634.In a word, if can be between (front lens) 191 of optics bottom that constitutes projection optical system PL and wafer W supply fluid, then the formation of liquid-immersion device 132 can be for constituting arbitrarily.

As shown in Figure 1, above-mentioned projecting cell PU+the Y side, be provided with off-axis alignment system (hereinafter referred to as " the alignment system ") ALG of such as the detection of the alignment mark that detects optically on the wafer W etc. to the image scale note.In addition,, can make transducer in various manners, but in the present embodiment, use the transducer of image processing mode as alignment system ALG.In addition, the transducer of image processing mode is for example by disclosed in Japanese patent laid-open 4-65603 communique and the 5th, 493, No. 403 specifications of United States Patent (USP) corresponding with it etc.Image pickup signal from alignment system ALG is provided to main control unit 50 (with reference to Fig. 6).Home within the scope that the domestic law of the designated state of appointment (or selected state of selecting) allows in the border application, quote the part of the open record as this specification in above-mentioned communique and the United States Patent (USP).

As Fig. 1 and shown in Figure 2, above-mentioned bearing table device 150 possesses: pedestal disk 112; Be disposed at the wafer carrying bench WST and the instrumentation microscope carrier MST of the top top of this pedestal disk 112; The interferometer system 118 (with reference to Fig. 6) of the position of these microscope carriers of instrumentation WST, MST; And the microscope carrier drive system 124 (with reference to Fig. 6) of using driving microscope carrier WST, MST such as linear motor.

A plurality of positions below wafer carrying bench WST and instrumentation microscope carrier MST, be provided with and do not have illustrated non-contact bearing, for example aerostatic bearing (promptly, air bearing (being also referred to as air cushion)), and utilize the static pressure of the forced air that above pedestal disk 112, sprays from these aerostatic bearings, above on pedestal disk 112, the space across about several microns is with wafer carrying bench WST, the instrumentation microscope carrier MST supporting of floating.And each microscope carrier WST, MST utilize microscope carrier drive system 124, are driven (comprising θ z rotation) in the XY plane independently of each other.For the position in the microscope carrier all-moving surface (XY plane) of wafer carrying bench WST and instrumentation microscope carrier MST, and, utilize interferometer system 118 to detect around the position of rotation of each coordinate.In addition, in Fig. 1 simplified illustration, only illustrate the Y-axis interferometer 116 of position of the Y direction that is used for instrumentation wafer carrying bench WST and the Y-axis interferometer 117 of position that is used for the Y direction of instrumentation instrumentation microscope carrier MST.The instrumentation value of interferometer system 118 (116,117) is sent to main control unit 50, main control unit 50 is based on the instrumentation value of interferometer system 118, and, come the position (and speed) of control wafer microscope carrier WST and instrumentation microscope carrier MST by microscope carrier drive system 124.

If describe in detail more, then as shown in Figure 1, wafer carrying bench WST possesses: the wafer carrying bench main body 91 that is provided with above-mentioned air bearing in its lower section; Wafer station WTB, it is not via there being illustrated Z levelling gear (brake that for example comprises voice coil motor) to be equipped on this wafer carrying bench main body 91, and relatively wafer carrying bench main body 91 Z-direction, around the direction of rotation (θ x direction) of X-axis and around the direction of rotation (θ y direction) of Y-axis by small driving.

On wafer station WTB, be provided with the wafer retainer (not diagram) that utilizes maintenance wafer W such as vacuum suction.This wafer retainer possesses: plate-like body portion; Be fixed on the top of this main part and be formed with the plate 93 (with reference to Fig. 1, Fig. 2) of the circular open of the 0.1～2mm left and right sides diameter also bigger in the central than the diameter of wafer W.On the zone of the main part of the circular open inside of plate 93, dispose a plurality of pins, utilizing these a plurality of pins to come under the state of supporting wafer W, by vacuum suction.At this moment, wafer W by the state of vacuum suction under, the surface of this wafer W surface and plate 93 is sustained height roughly.Surface applied 93 whole of plates has lyophobicity materials (hydrophobic material) such as fluorine-type resin or propylene resin, and is formed with the lyophoby film.And, in the surface applied of wafer W resist (inductive material) is arranged, utilize this coated resist to be formed with etchant resist.At this moment, the film of the etchant resist liquid Lq that preferably uses relative immersion liquid to use with lyophobicity.And, film outside also can forming in the mode that covers this etchant resist on (layer) on the surface of wafer W.The film that the liquid Lq that uses as this outer relative immersion liquid of preferred use of filming has lyophobicity.In addition, film outward have the protection etchant resist not liquid body Lq influence defencive function, prevent to constitute that the material to liquefied Lq of etchant resist separates out separates out the reflection that prevents function and prevent the reflection of illumination light IL and prevent at least one function in the function.

As shown in Figure 1, above-mentioned instrumentation microscope carrier MST possesses: the instrumentation microscope carrier main body 92 that is provided with above-mentioned air bearing in its lower section; Via there not being illustrated Z levelling gear to be equipped on Metering measuring table MTB on this instrumentation microscope carrier main body 92.

Metering measuring table MTB comprises: the basket 120 (with reference to Fig. 5) that the hollow of top opening is rectangular-shaped; Block the top of this basket 120, the plate shape parts 101 that for example have the specific thickness that the material of lyophobicity forms by polytetrafluoroethylene (Teflon (registered trade mark)) etc., and this Metering measuring table has the size of short transverse and compares very little rectangular-shaped outward appearance with Width with the size of depth direction.

As the vertical view of Metering measuring table MTB promptly as shown in Figure 4, above-mentioned plate shape parts 101 are formed with: the rectangular opening 101a that with the Y direction is length direction; Have with the roughly the same X-direction size of this opening 101a and be the rectangular opening 101b of length direction with this X-direction; Three circular open 101d, 101e, 101f.

As shown in Figure 5, in the inboard of the opening 101b of above-mentioned plate shape parts 101 and the internal configurations of the basket 120 below the opening 101b illumination monitor (exposure monitor) 122 is arranged.As shown in Figure 5, this illumination monitor 122 possesses: by the glass component 126 that forms for raw-material glass with synthetic quartz or fluorite etc.; Be fixed on the following optical sensor 128 of this glass component 126 etc. by seamless unoccupied place roughly.Optical sensor 128 has the sensitive surface of regulation area, so that can accept roughly whole light of illuminated illumination light IL in above-mentioned exposure area IA (with reference to Fig. 4) shown in Figure 5, and this optical sensor with the zone (for example about wavelength 300nm～100nm) of the identical wavelength of illumination light IL under have sensitivity, and for detecting illumination light IL, include the photo detector group of a plurality of silicon photoelectric diodes (or photomultiplier) with higher response frequency etc.

As shown in Figure 5, glass component 126 has medial surface and the opposed shape of downside across the opening 101b of specified gap and plate shape parts 101 part.At this moment, the width dimensions of the gap B between the upper side of opening 101b and glass component 126 for example is set to about 0.3mm.

Glass component 126 engages with support unit 130 above the diapire of being located at basket 120 from the top.That is, it is the shape of the shaped as frame of Rack down that support unit 130 has from overlook (from the top) that surround optical sensor 128, and the outer edge below glass component 126 is formed with the end difference that engages with the upper end of support unit 130.Be formed with on whole on glass component 126 to illumination light IL carry out dim light by the film formed dim light film 129 of metal foil such as chromium, and, be formed with lyophoby film WRF thus at lyophobicity materials (hydrophobic material) such as the top of this dim light film coating fluorine-type resin or propylene resins.In the present embodiment, this lyophoby film WRF top be set to above the plate shape parts 101 roughly with one side (flushing).

On the other hand, below glass component 126, the zone beyond the rectangular region of central portion is formed with by the film formed photomask 127 of metal foil such as chromium.As shown in Figure 5, utilize this photomask 127, the stray light (with reference to the solid arrow of the thick line among Fig. 5) that partly incides glass component 126 via gap B is cut off (shading).

The illumination monitor 122 of present embodiment for example have with Japanese patent laid-open 6-291016 communique and with it corresponding United States Patent (USP) the 5th, 721, No. 608 same formations of disclosed illumination monitor (exposure monitor) such as specification, on the image planes of projection optical system PL by the illumination of liquid Lq instrumentation illumination light IL.The detection signal (light-to-current inversion signal) of optical sensor 128 of a part that constitutes illumination monitor 122 is provided for main control unit 50 via not having illustrated holding circuit (for example peak holding circuit etc.) and analog/digital (A/D) converter.In the scope that the domestic law of the designated state of border application appointment (or selected state of selecting) allows, quote the disclosure in above-mentioned communique and the United States Patent (USP) home, and as the part of the record of this specification.

In addition, in the side of glass component 126 at least with plate shape parts 101 opposed zones and with the internal face of the glass component 126 opposed opening 101b of plate shape parts 101, handled by lyophoby and have lyophobicity.Handle as lyophoby, can wait and carry out by applying lyophobicity materials such as above-mentioned fluorine-type resin material or propylene resin material.

In addition, at basket 120 diapires, be formed with tap 120a near above-mentioned support unit 130, this tap 120a does not have illustrated recoverer via there being illustrated pipe arrangement to be connected to.The gas-liquid separator etc. that this recoverer possesses vacuum system and comprises the jar that can accommodate liquid Lq.Even no matter above-mentioned lyophoby is handled whether carry out, also can reclaim the liquid Lq that flow into the inside of basket 120 via gap B at this recoverer.

As shown in Figure 4, have overlooking in the internal configurations of the opening 101a of above-mentioned plate shape parts 101 and be rectangular reference mark plate FM down.At this moment, between reference mark plate FM and plate shape parts 101, for example the gap A about 0.3mm be formed at reference mark plate FM around.Be set to above the reference mark plate FM and plate shape parts 101 surperficial roughly the same height (flushing).On the surface of this reference mark plate FM, be formed with three couples first reference mark RM with the assigned position relation ₁₁～RM ₃₂With three second reference mark WM ₁～WM ₃, wherein, this first reference mark RM ₁₁～RM ₃₂Can utilize above-mentioned a pair of mother matrix alignment detection system RAa, RAb to come to carry out over the ground one to one while instrumentation, the second reference mark WM ₁～WM ₃Be detected by alignment system ALG.These reference marks form by patterns of openings respectively, this patterns of openings is on roughly whole the chromium layer that upward forms on the surface of the parts (for example glass ceramics of utmost point low bulk, for example Network リ ア セ ラ system (registered trade mark)) that constitute reference mark plate FM, forms by patterning with the position relation of stipulating.In addition, also can form each reference mark by patterns such as aluminium (residual pattern).

In the present embodiment, for example as with Japanese patent laid-open 5-21314 communique and with it corresponding the 5th, 243, No. 195 specifications of United States Patent (USP) etc. disclosed same, determine the configuration of above-mentioned each reference mark, thus the above-mentioned first reference mark RM _J1～RM _J2(j=1～3) can and utilize above-mentioned a pair of mother matrix alignment detection system RAa, RAb to carry out the while instrumentation by liquid Lq, and with this first reference mark RM _J1, RM _J2Instrumentation simultaneously, can be not by liquid Lq by the alignment system ALG instrumentation second reference mark WM _jWithin the scope that the domestic law of the designated state of border application appointment (or selected state of selecting) allows, quote the disclosure in above-mentioned communique and the United States Patent (USP) home, and as the part of the record of this specification.In addition, be roughly tabular surface above the reference mark plate FM, the datum level that also can be used as multiple spot focal position detection system uses.Though on this reference mark plate FM, do not illustrate, be formed with the lyophoby film that constitutes by lyophobicity materials such as above-mentioned fluorine-type resin material or propylene resin materials on the top of above-mentioned chromium layer.

In the side of reference mark plate FM, implement to handle with plate shape parts 101 opposed zones and with the internal face of the opposed opening 101a of reference mark plate FM of plate shape parts 101 at least with above-mentioned same lyophoby.And, at the diapire of basket 120, near reference mark plate FM, also forming and the same tap of above-mentioned tap 120a, this tap is connected to the vacuum system of above-mentioned recoverer.

The inside of the basket 120 below the inboard of the opening 101d of above-mentioned plate shape parts 101 and opening 101b disposes and has the uneven illumination tester of overlooking down to circular pattern plate 103 104.Between pattern plate 103 and plate shape parts 101, for example the clearance D of the width dimensions about 0.3mm be formed on pattern plate 103 around.

Uneven illumination tester 104 has: above-mentioned pattern plate 103; The transducer that does not have illustrated photo detector (above-mentioned silicon photoelectric diode or photomultiplier) to constitute by the below that is disposed at this pattern plate.Pattern plate 103 and above-mentioned glass component 126 are made of quartz glass etc. equally, are formed with the photomask of chromium etc. on its surface, are formed with aperture 103a in the central authorities of this photomask as the light portion of passing.And, on this photomask, be formed with the above-mentioned lyophoby film that constitutes by lyophobicity materials such as fluorine-type resin material or propylene resin materials.

Above-mentioned uneven illumination tester 104 has for example opens clear 57-117238 communique with the Japan Patent spy and the corresponding United States Patent (USP) the 4th with it, 465, No. 368 same formations of disclosed uneven illumination tester such as specification are come the uneven illumination of instrumentation illumination light IL by liquid Lq on the image planes of projection optical system PL.The detection signal (light-to-current inversion signal) of transducer that constitutes the uneven illumination tester is provided for main control unit 50 via not having illustrated holding circuit (for example peak holding circuit etc.) and analog/digital (A/D) converter.Within the scope that the domestic law of the designated state of border application appointment (or selected state of selecting) allows, quote the disclosure in above-mentioned communique and the United States Patent (USP) home, and as the part of the record of this specification.

Being circular slit plate 105 under overlooking, is under the state of one side (flushing) together on the surfaces of its surface and plate shape parts 101, is configured in the inside of the opening 101e of above-mentioned plate shape parts 101.Between slit plate 105 and plate shape parts 101, for example the slit E of the width dimensions about 0.3mm be formed on slit plate 105 around.This slit plate 105 is same with above-mentioned pattern plate 103, and the photomask of chromium etc. that has quartz glass and be formed at the surface of this quartz glass is formed with the slit pattern of extending along X-direction, Y direction at the regulation position of this photomask as the transmittance section.In addition, on this photomask, be formed with the above-mentioned lyophoby film that constitutes by lyophobicity materials such as fluorine-type resin material or propylene resin materials.This slit plate 105 is to constitute the parts of a part of aerial image tester of luminous intensity that instrumentation utilizes the aerial image (projection image) of projection optical system PL projected pattern.In the present embodiment, the inside of Metering measuring table MTB below this slit plate 105 (basket 120) is provided with receiving system, this receiving system is by above-mentioned slit plate, accept to shine the illumination light IL of plate shape parts 101 by projection optical system PL and liquid Lq, thus, configuration example is as driving 2002-14005 communique and U.S. Patent Application Publication No. 2002/0041377 disclosed aerial image tester identical aerial image testers such as specification corresponding with it with the Japan Patent spy.Within the scope that the domestic law of the designated state of border application appointment (or selected state of selecting) allows, quote the disclosure in above-mentioned communique and the United States Patent (USP) home, and as the part of the record of this specification.

In the inside of the opening 101e of above-mentioned plate shape parts 101,, dispose overlooking and be circular corrugated aberration instrumentation pattern plate 107 down with the surface of its surface and plate shape parts 101 state with one side (flushing).This corrugated aberration instrumentation is same with above-mentioned pattern plate 103 with pattern plate 107, has quartz glass and is formed on the film of chromium etc. on the surface of this quartz glass, and be formed with circular open in the central authorities of this photomask.In addition, on this photomask, be formed with the above-mentioned lyophoby film that constitutes by lyophobicity materials such as fluorine-type resin material or propylene resin materials.In the inside of this corrugated aberration instrumentation with the Metering measuring table MTB (basket 120) below the pattern plate 107, be provided with by projection optical system PL and liquid Lq accept illumination light IL, for example comprise the receiving system of microlens array, thus, the configuration example such as the world disclose No. 99/60361 brochure and the European patent 1st corresponding with it, 079, No. 223 disclosed corrugated aberration tester such as specification.Within the scope that the domestic law of the designated state of border application appointment (or selected state of selecting) allows, quote disclosing in above-mentioned communique and the United States Patent (USP) home, and as the part of the record of this specification.

Above-mentioned pattern plate 103, slit plate 105 and corrugated aberration instrumentation with in each side of pattern plate 107 at least with plate shape parts 101 respectively opposed zones and plate shape parts 101 and internal faces pattern plate 103 opposed opening 101d, with the internal face of slit plate 105 opposed opening 101e and with the internal face of corrugated aberration instrumentation with pattern plate 107 opposed opening 101f, carried out respectively and above-mentioned same lyophoby is handled.In addition, diapire at basket 120, near the pattern plate 103, slit plate 105 near and corrugated aberration instrumentation with pattern plate 107 near, be formed with the tap same respectively with above-mentioned tap 120a, these taps are connected to the vacuum system of above-mentioned recoverer.

In addition, though the diagram of omission, but in the present embodiment, because the internal configurations at basket 120 has the photo detector (transducer) that constitutes above-mentioned various testers, think the influence of the heating of doing one's utmost to avoid these photo detectors, be provided with the cooling body of these photo detectors and basket 120.As the cooling body of photo detector, can exemplify out the heat sink of the diapire of for example being located at basket 120 and the combination of connected Peltier's element etc.In addition, the cooling body as basket 120 self for example can adopt the mechanism that pours into the type of cooling of cooling agent to the inside of piping system.

Moreover, from suppressing the viewpoint of influence of heat, in above-mentioned aerial image tester and corrugated aberration tester etc., for example also can be only the part of optical system etc. be equipped on instrumentation microscope carrier MST.

In addition, in the exposure device 100 of present embodiment, be provided with multiple spot focal position detection system, though in Fig. 1, do not illustrate, but it comprises irradiation system 110a and receiving system 110b (with reference to Fig. 6), and for example with the Japanese patent laid-open 6-283403 communique identical oblique incidence modes of disclosed situation such as (No. the 5th, 448,332, corresponding United States Patent (USP)s).

The main composition of the control system of expression exposure device 100 among Fig. 6.This control system is that the center constitutes with the main control unit 50 that the microcomputer (or work station) by unified control device integral body constitutes.In this Fig. 6, the tester group of illumination monitor 122 on the above-mentioned Metering measuring table MTB, uneven illumination tester 104, aerial image tester, corrugated aberration tester etc. is located in symbol 143 expression.

Next, based on Fig. 2, parallel processing action in the exposure device 100 of present embodiment, that used wafer carrying bench WST and instrumentation microscope carrier MST is described.Moreover in following action, main control unit 50 control liquid-immersion devices 132 also fill up liquid Lq all the time under the front lens 191 of projection optical system PL.

The state that expression is carried out the exposure of step-scan mode to the wafer W on the wafer carrying bench WST (at this, as an example, being made as the last wafer of certain batch (a collection of is 25 or 50)) among Fig. 2.At this moment, instrumentation microscope carrier MST standby on the position of readiness of the regulation that does not collide wafer carrying bench WST.

Above-mentioned exposure actions is carried out following action repeatedly by main control unit 50 and is finished, that is: the result etc. of wafer aligned who harmonizes (EGA) etc. based on for example enhancement mode holocrystalline that carries out in advance circle makes wafer carrying bench WST shift action between the mobile shooting in the scanning starting position (beginning to quicken the position) that is used for each shooting area on the wafer W is exposed; Scan exposure action with scan exposure mode transfer printing formed pattern on the mother matrix R relative with each shooting area.In addition, above-mentioned exposure actions is to carry out under the state that maintains liquid Lq between front lens 191 and the wafer W.

In addition, in wafer carrying bench WST side, in the stage of having finished to the exposure of wafer W, main control unit 50 is based on the instrumentation value of interferometer system 118, control microscope carrier drive system 124, and make instrumentation microscope carrier MST (Metering measuring table MTB) move near the wafer carrying bench WST that is positioned at the exposure completing place-position of Y side.At this moment, the instrumentation value of in 50 pairs of interferometer systems 118 of main control unit the interferometer of instrumentation being carried out in the Y direction position of each monitors, and makes Metering measuring table MTB and wafer station WTB on the Y direction at interval for example about 300 μ m, and keeps contactless state.In addition, be not limited thereto, main control unit 50 also can make Metering measuring table MTB-Y side and wafer station WTB+the Y side contacts.

Next, Yi Bian main control unit 50 keeps wafer station WT B and Metering measuring table MTB in the position of Y direction relation, Yi Bian begin to drive the action of two microscope carrier WST, MST simultaneously in+Y direction.

Like this, when utilizing main control unit 50, make wafer carrying bench WST, when instrumentation microscope carrier MST is mobile simultaneously, along with this wafer carrying bench WST and instrumentation microscope carrier MST to the moving of+Y side, the front lens 191 and the liquid Lq between the wafer W that remain on projecting cell PU move on wafer W → plate 93 → Metering measuring table MTB successively.That is, become liquid Lq is remained in state between Metering measuring table MTB and the front lens 191.

Next, main control unit 50 is based on the instrumentation value of the position of 118 couples of wafer carrying bench WST of interferometer system, control microscope carrier drive system 124, wafer carrying bench WST is moved to the wafer exchange position of regulation, and carry out exchange to the initial wafer of next group, meanwhile, used the instrumentation of the regulation of instrumentation microscope carrier MST as required.

As the instrumentation of afore mentioned rules, for example can exemplify out example with the baseline instrumentation of alignment system ALG.

Particularly, in main control unit 50, use above-mentioned mother matrix alignment system RAa, RAb detects simultaneously be located at Metering measuring table MTB on reference mark plate FM on the corresponding mother matrix R of a pair of first reference mark on a pair of mother matrix alignment mark, and detect the position relation of the mother matrix alignment mark corresponding with a pair of first reference mark.At this moment, first reference mark is detected by projection optical system PL and liquid Lq.In addition, meanwhile, in main control unit 50,, detect inspection center and the relation of the position between second reference mark of alignment system ALG by detect second reference mark on the said reference marking plate FM with alignment system ALG.

In addition, main control unit 50 is based on the position relation of the mother matrix alignment mark corresponding with above-mentioned a pair of first reference mark, inspection center and relation of the position between second reference mark and known a pair of first reference mark and the relation of the position between second reference mark of alignment system ALG, obtain the distance (or position relation) between the inspection center of the projection centre of the master pattern of utilizing projection optical system PL and alignment system ALG, i.e. the baseline of alignment system ALG.

In addition, in the stage of having finished the operation on above-mentioned two microscope carrier WST, the MST, main control unit 50 is set at instrumentation microscope carrier MST and wafer carrying bench WST above-mentioned near state, and keep wafer carrying bench WST and the instrumentation microscope carrier MST position on Y direction to concern, and liquid Lq is remained in projection optical system PL below state under, with just now on the contrary, simultaneously drive two microscope carrier WST, MST in-Y direction, and after wafer carrying bench WST (wafer) moved to the below of projection optical system PL, make instrumentation microscope carrier MST keep out of the way assigned position.

In main control unit 50, to new wafer execution wafer aligned, the exposure actions of step-scan mode, successively master pattern be transferred to a plurality of shooting areas wafer on thereafter.After this, repeat same action.

In addition, in the above description, move as instrumentation, though the situation of carrying out the baseline instrumentation is illustrated, but be not limited thereto, carry out between the commutation period of each wafer, use the tester group of instrumentation microscope carrier MST in wafer carrying bench WST side, carry out at least one in illumination instrumentation, uneven illumination instrumentation, aerial image instrumentation, the corrugated aberration instrumentation etc., also can make this instrumentation bearing reaction in the exposure of the wafer that carries out thereafter.Particularly, for example can utilize imaging characteristic correcting controller 52 to carry out the adjustment of projection optical system PL based on the instrumentation result.In addition, above-mentioned aerial image tester, uneven illumination tester, illumination monitor and corrugated aberration tester may not have that they are whole, also can only a part be equipped on instrumentation microscope carrier MST as required.

In addition, main control unit 50 is during carrying out above-mentioned a series of action, control liquid-immersion device 132, and from the liquid Lq of liquid supply nozzle 131A supply ormal weight, and reclaim the liquid Lq of ormal weight from liquids recovery nozzle 131B, continue to fill up the optical path space of the image planes side of projection optical system PL thus with liquid Lq.

In addition, main control unit 50 is controlled controllers 80, and supplies the liquid Lq that has reduced resistivity value from the liquid supply nozzle 131A of liquid-immersion device 132.Main control unit 50 is according to many conditions such as sweep speed of the wafer W in rerum natura of the film on wafer W surface (with the contact angle of liquid Lq etc.) and the exposure, decision should be from the supply of the liquid Lq of liquid supply nozzle 131A supply for the space, image planes sidelight road that continues to fill up projection optical system PL with liquid Lq, and command value that will this determined supply is input to controller 80.Controller 80 control flow control electromagnetically operated valve 86A, so that from liquid supply nozzle 131A supply and liquid Lq from the corresponding amount of the command value of the supply of main control unit 50, and when monitoring resistrivity meter 76, control flow control electromagnetically operated valve 86B is so that make the resistivity value that becomes regulation from the liquid Lq of liquid supply nozzle 131A supply.In addition, in the present embodiment, the resistivity value of liquid Lq is 10[M Ω cm] below, preferably be adjusted to 0.1～1.0[M Ω cm].

Yet, in the present embodiment, owing to make carbon dioxide (CO ₂) sneak into and be dissolved in the pure water, so also the meltage because of this carbon dioxide may occur, the refractive index of illumination light IL is different with the pure water of not sneaking into carbon dioxide relatively, and can not ignore the situation of the difference of this refractive index.Under these circumstances, the ratio of sneaking into of the relative pure water of carbon dioxide is known desirable numerical value, in advance this liquid refractive index after sneaking into of instrumentation.For example can with the ratio of sneaking into of the relative pure water of carbon dioxide with sneak into after the relation of liquid refractive index be stored in main control unit 50, main control unit 50 is based on this canned data, the refractive index of the liquid (pure water) that consideration causes because of the dissolving of carbon dioxide (regulation material), and adjust at least a portion among the projection optical system PL by above-mentioned imaging characteristic correcting controller 52.In this case, can the pattern of mother matrix R be transferred on the wafer W accurately by projection optical system PL, liquid Lq, and the not influence of the change of the refractive index of liquid body.

In addition, also may appear at and make carbon dioxide sneak into and be dissolved under the situation in the pure water, according to the difference of the meltage of this carbon dioxide, the penetrance of illumination light IL is different with the pure water of not sneaking into carbon dioxide relatively, and can not ignore the situation of the difference of this penetrance.At this moment, based on accepting the calculating that the result of illumination light IL stipulates by illumination monitor 122 under the state after accepting the result of illumination light IL under the state of not sneaking into carbon dioxide by illumination monitor 122 and sneaking into carbon dioxide, can obtain the penetrance change of the relative illumination light IL light of the identical wavelength of exposure light (or with) of the pure water (liquid) that the dissolving because of carbon dioxide (regulation material) causes thus.Thereby main control unit 50 also can be considered the change of this penetrance, carries out the dosage control (control of accumulated exposure amount) to the wafer W when the scan exposure.For example, main control unit 50 is by switching the energy coarse adjustment device of illuminator ILS inside, or adjust pulse energy or glow frequency (repetition rate) by the illumination light IL of light emitted, or the sweep speed of control mother matrix microscope carrier RST and wafer carrying bench WST is carried out dosage control.In this case, can the pattern of mother matrix R be transferred on the wafer W accurately by projection optical system PL, liquid Lq, and the not influence of the change of the penetrance of the relative illumination light IL of the liquid body light of the identical wavelength of exposure light (or with).

Such as described above, exposure device 100 according to present embodiment, liquid-immersion device 132 has to following liquid sneaks into the mechanism that (dissolving) makes the carbon dioxide that the resistivity of this liquid Lq reduces, wherein this liquid is for the parts at the light emitting side that is disposed at front lens 191, be on the film (lyophoby film or the film (etchant resist) (or to cover the external coating that the resist mode forms) that forms by resist) on the part (part of at least one side in plate 93 and the wafer W) of the part (at least one side's on the surface of plate shape parts 101 and each tester part) of Metering measuring table MTB or wafer station WTB, form the immersion liquid zone and the liquid of supply.Therefore, can prevent or suppress the charged of this liquid Lq effectively, and can suppress to form the film generation insulation breakdown in immersion liquid zone effectively.

If be described in detail further, then for example under the situation of carrying out the illumination instrumentation, utilize illumination monitor 122 (optical sensor 128), and by the liquid Lq on lyophoby film WRF and this lyophoby film WRF, accept illumination light IL, and carry out the illumination instrumentation of illumination light IL.When carrying out this illumination instrumentation, suppose under the situation in the immersion liquid zone that is formed with charged liquid Lq on the lyophoby film WRF, across lyophoby film WRF, between dim light film (metallic film) 129 below the lyophoby film WRF and liquid Lq, discharge (insulation breakdown), and lyophoby film WRF is sustained damage.In addition,, between metallic film 129 below the lyophoby film WRF and lyophoby film WRF, discharge (insulation breakdown), lyophoby film WRF is sustained damage because of charged with near contacting the liquid contact surface that makes lyophoby film WRF of charged liquid Lq.If this lyophoby film WRF sustains damage (deterioration), then the optical characteristics of lyophoby film WRF becomes inhomogeneous, might lyophobicity reduce and generation washmarking (watermark).

Yet, in the present embodiment, owing in pure water, be dissolved with carbon dioxide (carbonic acid gas), and make the liquid Lq of resistivity value reduction from liquid supply nozzle 131A supply, so can prevent the charged of liquid Lq, and can suppress the damage of the lyophoby film WRF that causes by insulation breakdown effectively.Thereby, can utilize illumination monitor 122 to carry out high-precision illumination instrumentation chronically, and reflect that this instrumentation result comes wafer W is exposed, can carry out high-precision exposure chronically thus.

Moreover, in the above description, be illustrated though exemplify illumination monitor 122, by suppressing the charged of liquid Lq, can prevent the damage of the lyophoby film above the instrumentation microscope carrier MST.In addition,, not only can suppress the damage of the lyophoby film above the instrumentation microscope carrier MST, and can suppress the damage (deterioration) of the lyophoby film above the plate 93 of wafer carrying bench WST by suppressing the charged of liquid Lq.

In addition, exposure device 100 according to present embodiment, utilize illumination light IL that mother matrix R is thrown light on, make the same moved further of relative this illumination light of mother matrix R IL, and undertaken the circuit pattern on the mother matrix R is transferred to scan exposure on the wafer W by projection optical system PL and liquid Lq with wafer W.When carrying out this scan exposure, suppose to be formed with on the etchant resist (or outside film) on the wafer W surface under the situation in immersion liquid zone of charged liquid Lq, by etchant resist (or filming outward and etchant resist), between the base material (silicon etc.) of liquid Lq and wafer W, discharge (insulation breakdown), might make etchant resist (or filming and etchant resist) sustain damage or reform outward.In addition, charged because of contacting with charged liquid Lq near the liquid contact surface that makes etchant resist (or filming) outward, between the base material (silicon etc.) of etchant resist (or outside film) and wafer W, discharge (insulation breakdown), might make etchant resist (or filming) sustain damage or reform outward.If damage takes place etchant resist (or filming outward), then liquid Lq soaks into from this damaged portion, might produce defective on the pattern that forms on the wafer W.In addition, if etchant resist damage takes place or reforms, then the response characteristic of the irradiation of illumination light IL changes relatively, might form desirable pattern on wafer W.

Yet, in the present embodiment, because dissolved carbon dioxide (carbonic acid gas) in pure water, and the liquid Lq that resistivity value is reduced from liquid supply nozzle 131A supply, so can be suppressed at the insulation breakdown of the etchant resist (when on etchant resist, being formed with external coating, being etchant resist and external coating) on the wafer W effectively.

In addition, in the exposure device 100 of present embodiment, utilize immersion exposure to carry out high-resolution and than the exposure of depth of focus big in the air, thus can be accurately with the pattern transfer of mother matrix R to wafer, for example can use the ArF excimer laser, realize transfer printing as the trickle pattern about device standard 45～100nm.

Moreover, in the present embodiment, use making carbon dioxide be dissolved into the liquid Lq that the liquid (carbonated water) in the pure water uses as immersion liquid, but the present invention is not limited thereto certainly.For example, if can not cause dysgenic words, chlorine is dissolved in prevents in the pure water that liquid Lq is charged device of forming on the wafer W etc.

In addition, under the situation of using pure water liquid Lq in addition, for by adjusting the resistivity of liquid Lq, prevent deterioration, the preferred liquid of sneaking into and dissolved the regulation material of the resistivity that can adjust this liquid that uses because of the film on the charged material that causes of liquid.

Moreover, in the present embodiment, to upstream side at fluid temperature adjusting mechanism 72, the situation of sneaking into regulation material (carbon dioxide) in liquid (pure water) is illustrated, but be not limited thereto, between also can one liquid adjusting mechanism and liquid supply nozzle in the temperature adjustment of carrying out liquid at least and flow control, in liquid, sneak into and dissolve the regulation material.

For example, under the situations such as microbial reproduction in worrying liquid Lq, preferably very near the position of the image planes of projection optical system PL, for example in the dead ahead of supply nozzle 131A or supply nozzle 131A, carry out the injection of carbon dioxide (carbonic acid gas), so that carbonic acid does not become the nutrient source of microbe.

In addition, also can not use above-mentioned CO ₂Dissolving tank 82 grades or dual-purpose CO ₂Dissolving tanks 82 etc., with at least a portion that forms in the parts of supply stream of liquid Lq, the material of not separated out in liquid Lq by carbon dioxide (carbonic acid gas) forms.

Moreover, no matter whether the resistivity value of liquid Lq is adjusted, under the situation that is formed with the immersion liquid zone, by the friction between liquid Lq and the wafer W (comprising at least one side in external coating and the etchant resist), liquid Lq and object (plate 93 (comprising the lyophoby film), plate shape parts 101 (comprising the lyophoby film), pattern plate 103 (comprising the lyophoby film), slit plate 105 (comprising the lyophoby film), pattern plate (comprising the lyophoby film), or reference mark plate FM (comprising the lyophoby film) etc.) friction between, and liquid Lq and jet element (131A, 131B etc.) friction between etc., might make liquid Lq, wafer W, in above-mentioned object and the jet element etc. at least one is charged, so preferably make at least one ground connection (earth) in above-mentioned object and the jet element etc. in advance.Like this, even liquid Lq is charged, also can remove the electric charge of liquid Lq.In addition, because charged, the jet element by above-mentioned object is charged etc., can prevent that foreign matter such as particulate from adhering on this object, so can prevent the liquid Lq that causes because of this foreign matter, the pollution of wafer W.Certainly, also can prevent the deterioration of the lyophoby film on the external coating that on wafer W, forms and at least one and the above-mentioned object in the etchant resist.

Moreover, also can as the world disclose No. 2005/031824 brochure etc. open, remove the electric charge of liquid Lq in the space of the image planes side that is fed to projection optical system PL.At this moment, can prevent to be fed to liquid Lq charged in space of the image planes side of projection optical system PL more effectively.

In addition, also can be near the space of the image planes side of projection optical system PL, configuration is opened the Destaticizing device (ion generator etc.) disclosed such as 2003-332218 communique as the Japan Patent spy, to the space of the image planes side of projection optical system PL (liquid Lq around) supply ion (for example anion), thus at least one destatics in liquid Lq, wafer W, object and the jet element.At this moment, even suppose that at least one has been with in liquid Lq, wafer W, object and the jet element, also owing to can remove static by Destaticizing device, attract the pollutant of particulates etc. so can prevent liquid Lq, wafer W, above-mentioned object and jet element etc., and the situation that liquid Lq or wafer W etc. are polluted.In addition, also can spray gas (gas that for example, comprises ion) by near interface by the local immersion liquid zone that forms of liquid Lq with the function of destaticing, can make this gas not only have the function of destaticing, but also have anti-leak function the liquid that forms the immersion liquid zone.For example, as the Japan Patent spy open 2004-289126 communique and U.S. Patent Application Publication No. 2006/0023189 specification corresponding etc. with it disclosed, airtight mechanism in the leakage of the liquid that will be used to prevent to form the immersion liquid zone is equipped under the situation of exposure device 100, can comprise ion in this employed gas of airtight mechanism.

In addition, no matter whether adjust the resistivity value of liquid Lq, when under the situation that is formed with the immersion liquid zone on the wafer W, because of the friction of liquid Lq and wafer W, might make wafer W (comprise outer film and etchant resist at least one) charged.The wafer W of electriferous state is because of attracting foreign matter such as particulate, and wafer W is polluted.

So, also can form the etchant resist (or filming) on wafer W surface with conductive material outward, prevent wafer W (comprise outer film and etchant resist at least one) charged.Perhaps, also can be by form the wafer retainer that keeps wafer W with conductive material, or the contact component of the conductive material that contacts with wafer W that the wafer retainer is kept of configuration, prevent wafer W (comprise outer film and etchant resist at least one side) charged.

In addition, also the lyophoby film that is formed on plate shape parts 93 grades can be made as conductivity.

In addition, under situation about the wafer W of electriferous state (film outside comprising and etchant resist at least one side) might be taken out of, also can form before the conveyance exposure and the conveyance member of the wafer W of at least one side in the exposure back by conductive material, discharge (removing) wafer W with electric charge.Or in exposure device 100, in order to carry out to the destaticing of wafer W that wafer carrying bench WST moves into and at least one side from the wafer W that wafer carrying bench WST takes out of, also can be with the configuration of cells of wafer W being soaked (soak) (for example cleaning) by conductive liquid (being dissolved with the pure water of carbon dioxide etc.) in Destaticizing devices such as configuration ion generators on the conveyance path of wafer W or in the conveyance path in wafer W.In addition, remove under the situation of unit, preferably in liquid is removed the unit, not only remove liquid, but also remove electric charge when the liquid of the drop of the liquid Lq of residual (adhering to) on the wafer W that in exposure device 100, is provided with after removing exposure etc.In addition, under the situation of the temperature adjustment unit that in exposure device 100, is provided with the temperature adjustment of before wafer carrying bench WST moves into, carrying out wafer W, also can in this temperature adjustment unit, remove electric charge.

In addition, also can be in the lining processor that is connected to exposure device 100 (comprise the applying device of the wafer W before exposure device 100 is moved into exposure and move in the developing apparatus of the wafer W that in exposure device 100, is exposed at least one), configuration is soaked the unit of (for example clean) with conductive liquid (being dissolved with the pure water of carbon dioxide etc.) to wafer W for the static of removing wafer W, or the Destaticizing device of configuration ion generator etc.Perhaps in the developing apparatus of moving into the wafer W that in exposure device 100, is exposed, when the wafer W after the exposure is developed, also can use the conductivity washing agent.In addition, disposing between exposure device 100 and the lining processor under the situation at junction surface, in the junction surface, carrying out removing the processing that destatics of electric charge from wafer W.

In addition, in the above-described embodiment, though the exposure device that also possesses instrumentation microscope carrier MST except that wafer carrying bench WST is illustrated, but the instrumentation microscope carrier may not be set, also can go up the various testers such as illumination monitor 122 that comprise glass component 126 are set at the object microscope carrier (wafer carrying bench WST) of placing object.Even in this case, also can utilize illumination monitor 122 grades to implement high-precision instrumentation chronically, by reflecting this instrumentation result ground wafer W is exposed, can implement high-precision instrumentation chronically.

In addition, in the above-described embodiment, though the present invention is applicable to that the situation of the scanning exposure apparatus of stepping surface sweeping mode etc. is illustrated, the scope of application of the present invention is not limited thereto certainly.That is, the present invention can be applicable to the exposure device of the exposure device of stepping repetitive mode and stepping connecting method or near exposure device of mode etc.

In addition, the present invention also is applicable to as Japanese patent laid-open 10-163099 communique and flat 10-214783 communique of Te Kai and the United States Patent (USP) 6th corresponding with it, 341, No. 007 specification and Japan Patent special table 2000-505958 communique and the United States Patent (USP) 5th corresponding with it, 969, No. 441 specifications etc. are disclosed to possess the exposure device of overloading bench-type of the wafer carrying bench of a plurality of maintenance wafers.In the scope that the domestic law of the designated state of border application appointment (or selected state of selecting) allows, quote the disclosure in above-mentioned communique and the United States Patent (USP) home, and as the part of the record of this specification.

In addition, the exposure device that has been suitable for above-mentioned immersion method is to utilize liquid (pure water) to be filled in the optical path space of light emitting side of terminal optical element of projection optical system PL and the formation that wafer is exposed, but also can as the world disclose 2004-019128 brochure and U.S. Patent Application Publication No. 2005/0248856 specification corresponding etc. with it disclosed, utilize the optical path space of light incident side of the terminal optical element of liquid-filled projection optical system PL.In the scope that the domestic law of the designated state of border application appointment (or selected state of selecting) allows, quote the disclosure in above-mentioned communique and the United States Patent (USP) home, and as the part of the record of this specification.

In addition, in the above-described embodiment, adopted between projection optical system PL and wafer W the exposure device of fill liquid partly, but the present invention also is applicable to as Japanese patent laid-open 6-124873 communique, spy and opens flat 10-303114 communique, United States Patent (USP) the 5th, disclosed immersion exposure devices such, that exposure is immersed in state in the liquid to the surperficial integral body of the wafer of picture etc. under, expose such as 825, No. 043.

Moreover, in the above-described embodiment, used the light transmission type mother matrix of the light-shielding pattern (or phase pattern/dim light pattern) that on the substrate of transmitance, is formed with regulation, but also can replace this mask, and for example the 6th, 778, No. 257 communiques of United States Patent (USP) are disclosed like that, use forms transmission pattern or electronics masks such as reflection graphic patterns or luminous pattern based on the electronic data of the pattern that should expose.

In addition, the present invention also be applicable to as the world disclose No. 2001/035168 brochure etc. disclosed, by on wafer W, forming interference fringe, and on wafer W, form the exposure device (etching system) of line and space pattern.

Purposes as exposure device, be not limited to the exposure device of semiconductor manufacturing usefulness, for example also can be widely used in the liquid crystal display cells pattern transfer to the liquid crystal of rectangle glass plate with exposure device or be used to make the exposure device of organic EL, film magnetic head, imaging apparatus (CCD etc.), microdevice and DNA chip etc.In addition; the present invention is not only applicable to the microdevice of semiconductor element etc.; and be applicable in order to be manufactured on employed mask or mother matrix in light exposure device, EUV exposure device, X line exposing device and the electronics line exposing device etc., circuit pattern is transferred to the exposure device of glass substrate or silicon wafer etc.

In addition, the light source of the exposure device of above-mentioned execution mode is not limited to the ArF excimer laser, also can use ArF excimer laser (output wavelength 248nm), F ₂Laser (output wavelength 157nm), Ar ₂Laser (output wavelength 126nm), Kr ₂The pulsed laser light source of laser (output wavelength 146nm) etc.; The extra-high-pressure mercury vapour lamp of the bright line of emission g line (wavelength 436nm), i line (wavelength 365nm) etc. etc.In addition, also can use the high frequency generating apparatus etc. of YAG laser.In addition, also can use the laser of the single wavelength of the infrared ray that will send from dfb semiconductor laser or optical-fiber laser or viewing area, for example amplify, and to use non-linear optical crystallization be ultraviolet high frequency waves with wavelength conversion with the optical fiber amplifier that is coated with erbium (or erbium and ytterbium both).In addition, projection optical system not only can be a reduction system, and doubly and in the amplification system any one such as can be.

In addition, semiconductor device is made through following steps, carries out the step of the function/performance design of device that is:; Manufacturing is based on the step of the mother matrix of this design procedure; Make the step of wafer by silicon materials; In the exposure device of above-mentioned execution mode, the pattern that is formed at mother matrix is transferred to the lithography step on the objects such as wafer by above-mentioned immersion exposure; Device number of assembling steps (comprise cutting action, engage operation, packaging process); Detect step etc.At this moment, in lithography step,, on object, form device pattern, so can make to high qualification rate the device of high integration owing to use the exposure device of above-mentioned execution mode to implement above-mentioned immersion exposure method.

Industrial utilizability

Exposure method of the present invention and exposure device are applicable to by liquid object are exposed Situation. In addition, device making method of the present invention is applicable to the manufacturing of microdevice.

Claims (29)

1. an exposure method exposes to object by liquid, it is characterized in that, comprising:

The regulation material that dissolving is adjusted the resistivity of this liquid in liquid, and be fed to this liquid that is dissolved with the regulation material on the film that forms on the above-mentioned object and form the operation in immersion liquid zone;

Be radiated at exposure light on the above-mentioned object and expose by aforesaid liquid, and form the operation of predetermined pattern.

2. exposure method according to claim 1 is characterized in that, the film on the above-mentioned object is formed by the irritability material that is used to form above-mentioned pattern.

3. exposure method according to claim 2 is characterized in that, the liquid that the film on the above-mentioned object forms above-mentioned immersion liquid zone relatively has lyophobicity.

4. exposure method according to claim 1 is characterized in that, the film on the above-mentioned object forms and covers the irritability material that is used to form above-mentioned pattern.

5. exposure method according to claim 4 is characterized in that, the liquid that the film on the above-mentioned object forms above-mentioned immersion liquid zone relatively has lyophobicity.

6. exposure method according to claim 1 is characterized in that, by adjusting the resistivity of aforesaid liquid, prevents the deterioration because of the film on the charged above-mentioned object that causes of aforesaid liquid.

7. exposure method according to claim 1 is characterized in that the afore mentioned rules material comprises carbon dioxide.

8. a device making method is characterized in that, comprises that any described exposure method exposes object in the claim 1～7 by using, and comes to form on above-mentioned object the photo-mask process of device pattern.

9. exposure device, by optics and liquid with exposing light beam illuminating to object, and above-mentioned object exposed, on this object, form the pattern of regulation thus, it is characterized in that possessing:

Transducer, it accepts the light with the identical wavelength of exposing light beam by the lyophoby film of the parts surface of the light emitting side that is disposed at above-mentioned optics and the liquid on this lyophoby film;

Liquid-immersion device, it has the mechanism of sneaking into of sneaking in the liquid on being fed to above-mentioned lyophoby film and dissolving regulation material that the resistivity of this liquid is adjusted, and the aforesaid liquid that will be dissolved with this regulation material is fed on the above-mentioned lyophoby film and forms the immersion liquid zone.

10. exposure device according to claim 9 is characterized in that, also possess the object microscope carrier of placing above-mentioned object, and above-mentioned object microscope carrier is provided with above-mentioned parts.

11. exposure device according to claim 9 is characterized in that, also possesses: the object microscope carrier of placing above-mentioned object; Be provided with above-mentioned parts and the instrumentation microscope carrier different with above-mentioned object microscope carrier.

12. exposure device according to claim 10 is characterized in that, on object on the above-mentioned object microscope carrier and the above-mentioned object microscope carrier with the contacted parts of aforesaid liquid at least one is grounded.

13. exposure device according to claim 10 is characterized in that, is formed by conductive material with the part of the contacted above-mentioned object microscope carrier of above-mentioned object.

14. exposure device according to claim 9 is characterized in that, by adjusting the resistivity of aforesaid liquid, prevents the deterioration because of the charged above-mentioned lyophoby film that causes of aforesaid liquid.

15. exposure device according to claim 9 is characterized in that, also possesses adjusting device, this adjusting device is considered the refractive index change of the aforesaid liquid that the dissolving because of the afore mentioned rules material causes, and adjusts at least a portion in the optical system.

16. exposure device according to claim 9, it is characterized in that, also possesses control device, this control device considers that aforesaid liquid that the dissolving because of the afore mentioned rules material causes changes with the penetrance of the light of the identical wavelength of above-mentioned exposing light beam relatively, carries out the dosage control at above-mentioned object.

17. exposure device according to claim 9 is characterized in that, the afore mentioned rules material comprises carbon dioxide.

18. an exposure device, by liquid with exposing light beam illuminating to object, and above-mentioned object exposed, on this object, form the pattern of regulation thus, it is characterized in that possessing:

The object microscope carrier, it places above-mentioned object;

Liquid-immersion device, it has in the liquid of supplying on the regulation film that forms on the above-mentioned object that is being positioned on the above-mentioned object microscope carrier, sneak into and dissolve the mechanism of sneaking into of regulation material that the resistivity of this liquid is adjusted, and the aforesaid liquid that will be dissolved with this regulation material is fed on the above-mentioned film and forms the immersion liquid zone.

19. exposure device according to claim 18 is characterized in that,

Above-mentioned liquid-immersion device also has: aforesaid liquid is fed to supply part on the above-mentioned film; Be sent to the temperature adjustment of liquid of this supply part and at least one the liquid adjusting mechanism in the flow control,

The above-mentioned mechanism of sneaking into sneaks into the regulation material and be dissolved in the aforesaid liquid between aforesaid liquid adjusting mechanism and aforesaid liquid supply part and a side of the upstream side of aforesaid liquid adjusting mechanism.

20. exposure device according to claim 19 is characterized in that, at least one in above-mentioned object and the above-mentioned supply part is grounded.

21. exposure device according to claim 18 is characterized in that, is formed by conductive material with the part of the contacted above-mentioned object microscope carrier of above-mentioned object.

22. exposure device according to claim 18 is characterized in that, by adjusting the resistivity of aforesaid liquid, prevents the deterioration because of the film on the charged above-mentioned object that causes of aforesaid liquid.

23. exposure device according to claim 18 is characterized in that, also possesses adjusting device, this adjusting device is considered the refractive index change of the aforesaid liquid that the dissolving because of the afore mentioned rules material causes, and adjusts at least a portion in the optical system.

24. exposure device according to claim 18, it is characterized in that, also possesses control device, this control device considers that aforesaid liquid that the dissolving because of the afore mentioned rules material causes changes with the penetrance of the light of the identical wavelength of above-mentioned exposing light beam relatively, carries out the dosage control at above-mentioned object.

25. exposure device according to claim 18 is characterized in that, the afore mentioned rules material comprises carbon dioxide.

26. a device making method is characterized in that, it comprises the next photo-mask process that forms device pattern on object of any described exposure device in the use claim 9～25.

27. a device making method is included in the exposure device that is connected to lining processor, by liquid object is exposed, and forms the photo-mask process of device pattern on object, it is characterized in that,

Soak by the object before moving in the above-mentioned exposure device with conductive liquid, and remove above-mentioned object with electric charge.

28. device making method according to claim 27 is characterized in that, is undertaken by the soaking in above-mentioned lining processor of above-mentioned object that above-mentioned conductive liquid carries out.

29. according to claim 27 or 28 described device making methods, it is characterized in that, in above-mentioned lining processor, etchant resist be formed on the above-mentioned object.

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