CN1945782A - Microwave ion source - Google Patents
Microwave ion source Download PDFInfo
- Publication number
- CN1945782A CN1945782A CNA2006101458578A CN200610145857A CN1945782A CN 1945782 A CN1945782 A CN 1945782A CN A2006101458578 A CNA2006101458578 A CN A2006101458578A CN 200610145857 A CN200610145857 A CN 200610145857A CN 1945782 A CN1945782 A CN 1945782A
- Authority
- CN
- China
- Prior art keywords
- microwave
- ion source
- luffer boards
- microwave coupling
- source according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 claims abstract description 33
- 238000010168 coupling process Methods 0.000 claims abstract description 33
- 238000005859 coupling reaction Methods 0.000 claims abstract description 33
- 239000000498 cooling water Substances 0.000 claims abstract description 5
- 239000007769 metal material Substances 0.000 claims abstract description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000003302 ferromagnetic material Substances 0.000 claims description 3
- 230000006378 damage Effects 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 32
- 239000007789 gas Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005291 magnetic effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 210000004907 gland Anatomy 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001518 atomic anions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
Abstract
The invention discloses a novel structure of a microwave ion source. In the structure, the waveguide adopts a single ridge design, is made of a metal material, is forcibly cooled by cooling water, the ridge thickness exceeds the center of the microwave coupling window plate, and the end face of the waveguide ridge is tightly attached to the microwave coupling window. The unique design of the microwave ion source fundamentally avoids the damage of high-energy backflow secondary electron beams to the microwave coupling window plate, so that the microwave ion source really becomes an ion source with ultra-long service life.
Description
Technical field
The invention belongs to the technology of ion source field, be specifically related to a kind of new construction of microwave ion source.
Background technology
The principle of microwave ion source is to select suitable microwave for use, by the microwave coupling window microwave power is fed in the arc chamber.Arc chamber is in the specific magnetic field, the excitation that free electron wherein is subjected to microwave can produce cyclotron resonance (being ECR), the electronics that obtains energy makes the working gas ionization in the arc chamber, and formed ion is accelerated electric field and draws and obtain required ion beam.Microwave ion source has advantages such as discharging efficiency height, educt beaming flow are powerful, quality better, monatomic ion ratio height, long working life, can be widely used in aspects such as accelerator, neutron generator and ion implantor.
Microwave ion source does not have hot cathode, and its working life should be very long in theory.But the microwave ion source of manufacturing both at home and abroad all runs into a serious technical barrier, the i.e. life problems of ion source microwave window.Because can produce secondary electron inevitably in the ion accelerating region, they return the microwave coupling luffer boards centre of banging to the arc chamber bottom with very high energy.The microwave of present employed microwave ion source coupling luffer boards are to be made by ceramic-like materials, and self heat conductivility is poor; The common waveguide design that adopts, the centre can not be cooled off, and waveguide is limited with the contact-making surface of microwave coupling luffer boards, can not help microwave coupling window strip to walk heat.So microwave coupling luffer boards ftractures or evaporate because of producing high heat soon under the bombardment of the secondary beam of backflowing, the formation through hole causes the microwave ion source cisco unity malfunction.Therefore, be subjected to very big restriction the useful life of microwave ion source.At present, the life-span of the microwave ion source of better performances has only more than 100 hour.
Technical scheme
The present invention is exactly in the prior art, and the useful life of microwave ion source is the problem of weak point, and a kind of new construction of the microwave ion source that can greatly increase the service life is provided.
A kind of microwave ion source comprises several parts such as waveguide, arc chamber, magnet exciting coil, vacuum chamber, accelerating electrode.Wherein the arc chamber rear end links to each other with waveguide through the microwave coupling window, and the other end is connected mutually with vacuum chamber.Twine magnet exciting coil around the arc chamber.Working gas enters accelerating region by said ion leadout hole after entering arc chamber ionization, is accelerated electric field and quickens to form required ion beam.In the technology provided by the present invention, key is that waveguide adopts the design of single ridge, makes with metal material, and ridge thickness surpasses the center of microwave coupling luffer boards, and the end face of wave guide ridge fits tightly with the microwave coupling window, forces to cool off by cooling water.
The benefit of this single ridge design is, the wave guide ridge by Forced water cooling is that metal material is made, good heat conductivity, and its ridge end face closely contacts with microwave coupling luffer boards, and contact-making surface is big, and the heat that helps on the microwave coupling luffer boards is derived by wave guide ridge; Simultaneously, even microwave coupling luffer boards are breakdown, because the sealing gland effect of ridge end face does not still influence ionogenic normal operation, the useful life of greatly improving microwave ion source.
Simultaneously; in order further to prolong the life-span of microwave coupling luffer boards; can microwave be coupled luffer boards backflowed electron bombard the centre offer a centre bore; the electronics that backflows is directly bombarded on the ridge end face of waveguide; protect microwave coupling luffer boards, thereby further prolong the useful life of microwave ion source.
Description of drawings
The structural representation of Fig. 1 microwave ion source
The input of 1 microwave power; 2 ridge waveguides; 3 cooling waters; 4 magnet exciting coils; 5 microwave coupling windows; 6 arc chambers; 7 secondary electrons that backflow; 8 said ion leadout hole; 9 vacuum chambers; 10 accelerating electrodes; 11 ion beams of drawing; 12 working gass; 13 awl bottom outlets; 14 centre bores;
Embodiment
Below in conjunction with accompanying drawing technical scheme provided by the present invention is further elaborated.
As shown in Figure 1, a kind of microwave ion source comprises several parts such as single ridged waveguides 2, arc chamber 6, magnet exciting coil 4, vacuum chamber 9, accelerating electrode 10.Wherein single ridged waveguides 2 links to each other with arc chamber 6 one ends by microwave coupling window 5, twines magnet exciting coil 4 around the arc chamber 6, and the ion outlet 8 of the other end communicates with vacuum chamber 9.In this enforcement, single ridged waveguides 2 adopts metal material, and especially ferromagnetic material is made, and its inner logical cooling water 3 is forced cooling.Simultaneously, single ridge end face of waveguide 2 fits tightly with microwave coupling luffer boards 5, and its thickness surpasses the center of microwave coupling luffer boards 5.In addition, offer a centre bore 14 in the center of microwave coupling luffer boards 5, the diameter of centre bore 14 is greater than the diameter in electron beam 7 cross sections of backflowing; On single ridged waveguides 2 with centre bore 14 over against the position also can offer one the awl bottom outlet 13.
During work, working gas 12 enters arc chamber 6 by by after the microwave power ionization of microwave coupling window 5 feed-ins, enters vacuum chamber 9 from the said ion leadout hole 8 of arc chamber 6, is accelerated electrode 10 again and quickens the back and form required ion beam 11.
The benefit of this technical scheme is fairly obvious:
1) unique single ridged waveguides designs, both be beneficial to the heat conduction of microwave coupling luffer boards, can still keep the effective sealing gland of arc chamber when breakdown at the microwave luffer boards that are coupled again, can stop the loss of working gas in the arc chamber effectively, prevented that also remaining assorted gas is to the pollution of working gas in the waveguide, compare with the waveguide of prior art, the life-span that prolongs microwave ion source is benefited.
2) offer centre bore on the microwave coupling luffer boards, the electronics that backflows is directly bombarded on the ridge end face of waveguide; On single ridged waveguides, offer the awl bottom outlet, increased the area of the electron bombard of being backflowed, simultaneously, because of awl bottom outlet internal magnetic field weakens very soon, and direction is to point to hole wall, and the electronics of injecting in the awl bottom outlet that backflows is bombarded by dispersion on the hole wall of awl bottom outlet, thereby has alleviated surface thermal load intensity greatly.
3) wave guide ridge uses ferromagnetic material to make, and helps the magnetic field in the arc chamber, has saved exciting power.
These some unique design makes microwave ion source fundamentally avoid high energy to backflow secondary beam to the destruction of microwave coupling luffer boards, makes the ion source that microwave ion source really becomes extra long life.It is used for equipment such as corresponding accelerator, ion implantor, will improve the reliability and the operational efficiency of equipment operation greatly, thereby produce good social benefit and economic benefit.
For example, adopt a microwave ion source of new construction provided by the present invention, its major parameter is working gas: hydrogen; The highest extraction voltage: 75kV; Maximum is drawn stream by force: 100mA; Educt beaming flow density during the best perveance: 200mA/cm
2Normalized emittance ε≤0.129 π mmmrad; Proton compares H
+/ H
++ H
2 ++ H
3 +≈ 90%.At the 75kV educt beaming flow, greater than moving above 200 hours continuously under the situation of 65mA.
Claims (7)
1. microwave ion source, comprise waveguide (2), arc chamber (6), magnet exciting coil (4), vacuum chamber (9), accelerating electrode several parts such as (10), wherein waveguide (2) links to each other by same arc chamber (6) one ends of microwave coupling window (5), arc chamber (6) twines magnet exciting coil (4) on every side, the ion outlet of the other end (8) communicates with vacuum chamber (9), accelerating electrode (10) is set on the passage that ion beam is drawn, it is characterized in that: the single ridged waveguides that described waveguide (2) is made for metal material, ridge thickness surpasses the center of microwave coupling luffer boards (5), and fits tightly with microwave coupling luffer boards (5).
2. microwave ion source according to claim 1 is characterized in that: described single ridged waveguides (2) is made with ferromagnetic material.
3. microwave ion source according to claim 1 and 2 is characterized in that: described single ridged waveguides (2) is inner forces cooling by cooling water (3).
4. microwave ion source according to claim 1 and 2 is characterized in that: the centre bore (14) of a diameter greater than the beam cross section that backflows offered in the center at microwave coupling luffer boards (5).
5. microwave ion source according to claim 3 is characterized in that: the centre bore (14) of a diameter greater than the beam cross section that backflows offered in the center at microwave coupling luffer boards (5).
6. microwave ion source according to claim 4 is characterized in that: single ridged waveguides (2) go up with the centre bore (15) of microwave coupling luffer boards (5) over against the position offer one and bore bottom outlet (13).
7. microwave ion source according to claim 5 is characterized in that: single ridged waveguides (2) go up with the centre bore (15) of microwave coupling luffer boards (5) over against the position offer one and bore bottom outlet (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610145857A CN100580858C (en) | 2006-11-21 | 2006-11-21 | Microwave ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610145857A CN100580858C (en) | 2006-11-21 | 2006-11-21 | Microwave ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1945782A true CN1945782A (en) | 2007-04-11 |
| CN100580858C CN100580858C (en) | 2010-01-13 |
Family
ID=38045111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610145857A Active CN100580858C (en) | 2006-11-21 | 2006-11-21 | Microwave ion source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100580858C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103003913A (en) * | 2009-11-11 | 2013-03-27 | 米格有限责任公司 | Device for generating plasma by means of microwaves |
| CN103426706A (en) * | 2012-05-17 | 2013-12-04 | 中国原子能科学研究院 | Microwave ion source |
| CN109411319A (en) * | 2018-11-16 | 2019-03-01 | 合肥飞帆等离子科技有限公司 | A kind of novel plasma cathode electronics electron gun and 3D printer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014157758A (en) * | 2013-02-18 | 2014-08-28 | Sumitomo Heavy Ind Ltd | Microwave ion source and method of starting the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5852297B2 (en) * | 1979-06-04 | 1983-11-21 | 株式会社日立製作所 | microwave ion source |
| JPS5947421B2 (en) * | 1980-03-24 | 1984-11-19 | 株式会社日立製作所 | microwave ion source |
| CN1140161C (en) * | 2000-12-26 | 2004-02-25 | 北京航空工艺研究所 | Microwave plasma source |
| JP4062928B2 (en) * | 2002-02-06 | 2008-03-19 | 東京エレクトロン株式会社 | Plasma processing equipment |
-
2006
- 2006-11-21 CN CN200610145857A patent/CN100580858C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103003913A (en) * | 2009-11-11 | 2013-03-27 | 米格有限责任公司 | Device for generating plasma by means of microwaves |
| CN103003913B (en) * | 2009-11-11 | 2016-02-24 | 米格有限责任公司 | For generating the device of plasma by microwave |
| CN103426706A (en) * | 2012-05-17 | 2013-12-04 | 中国原子能科学研究院 | Microwave ion source |
| CN109411319A (en) * | 2018-11-16 | 2019-03-01 | 合肥飞帆等离子科技有限公司 | A kind of novel plasma cathode electronics electron gun and 3D printer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100580858C (en) | 2010-01-13 |
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