CN1937264A - White light-emitting diode and its preparing method - Google Patents
White light-emitting diode and its preparing method Download PDFInfo
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- CN1937264A CN1937264A CNA2005100864508A CN200510086450A CN1937264A CN 1937264 A CN1937264 A CN 1937264A CN A2005100864508 A CNA2005100864508 A CN A2005100864508A CN 200510086450 A CN200510086450 A CN 200510086450A CN 1937264 A CN1937264 A CN 1937264A
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Abstract
Light emitting diode (LED) in white light includes a LED with light emission from back, phosphor layer on back face of substrate, and resin shell for external package. The LED with light emission from back includes GaN buffer layer, N type GaN layer, luminous layer, P type GaN layer, and leading out electrode in sequence on a substrate of ruby. Thinning down the substrate of ruby, coating needed phosphor powder on back face of substrate of the LED with light emission from back, packaging them by using resin according to conventional method, the invention obtains the LED in white light. The LED in white light raises luminous intensity in red light wave band, reduces color temperature of white light, and increases color-rendering index of white light.
Description
Technical field
The present invention relates to a kind of white light emitting diode, and preparation method thereof.
Background technology
White light emitting diode has plurality of advantages such as luminous efficiency height, the response time is short, the life-span is long as white light source, and these advantages have determined it will partly replace the trend of existing white light source.Generally the preparation method of white light LBD of approval has following three kinds at present: (1) is that make separately or single chip integrated ruddiness by three, green glow and blue light-emitting diode are simultaneously luminous, obtain white light thereby mix, (2) excite the outer redgreenblue mixed fluorescent powder that wraps up by ultraviolet or purple-light LED as illuminating source, the luminous mixing of three-color phosphor obtains white light, (3) by blue light-emitting diode as illuminating source, partly excite the gold-tinted fluorescent material of outer parcel to send gold-tinted, the yellow light mix that interior light emitting diodes institute's blue light-emitting and excitated fluorescent powder obtain obtains white light.
Wherein, method (1) is owing to the reason of cost and technical elements also is not applied.Method (2) is that making fairly simple also is a kind of preparation method of white light LBD that is expected most, but owing to do not find the potting resin of suitable anti-ultraviolet irradiation so far and lack red fluorescence powder efficiently, thereby also be not widely used.Method (3) is at present by business-like a kind of white light LED production method, but also has a difficult problem that lacks suitable red light fluorescent powder and make the luminescent quality of white light emitting diode of preparation be restricted; And the white-light spectrum that is obtained by the two color light mixing is more single, the spectrum of the white light emitting diode of the method preparation is in the serious disappearance of long wave band (red spectral band), the yellow partially or indigo plant (colour temperature is higher) partially of the white light of being sent out, and color rendering index is lower, cause these white light emitting diodes narrow, can not adapt to the lighting demand that luminous mass is had relatively high expectations as the range of application of white light source.
Summary of the invention
The spectrum that the objective of the invention is to overcome the white light emitting diode of prior art for preparing seriously lacks at long wave band, the defective that colour temperature is higher and color rendering index is lower, thereby providing a kind of can improve the luminous intensity of red spectral band, reduced the colour temperature of white light and improved the white light emitting diode of the color rendering index of white light effectively, and preparation method thereof.
The objective of the invention is to realize by the following technical solutions:
White light emitting diode provided by the invention, as shown in Figure 3, it comprises the light-emitting diode of a back of the body bright dipping, and the resin shell 9 used of phosphor powder layer 8 on the back side of its substrate 1 and its outer enclosure.
The light-emitting diode of described back of the body bright dipping comprises a ruby substrate 1, is followed successively by GaN resilient coating 2, n type GaN layer 3, luminescent layer 4, p type GaN layer 5 on it, and the n type electrode 6 and the p type electrode 7 of drawing from n type GaN layer and p type GaN layer respectively;
Described ruby substrate is the Al of 0.01～5wt% transiting group metal elements of having mixed
2O
3Thickness is 0.05～0.2mm; Described transiting group metal elements comprises Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn etc.;
Described GaN resilient coating is the transition zone of extension on foreign substrate, and the material of this transition zone can be the combination of GaN, AlGaN, InAlN, InAlGaN or these several alloys, and its thickness is 100nm～10 μ m;
Described n type GaN layer is the contact layer of preparation n type ohmic contact, and this layer can be the combination of GaN, InAlN, AlGaN, InAlGaN or these several alloys, and thickness is 50nm～3 μ m;
Described luminescent layer is the active layer of light-emitting diode, and this layer is by barrier layer GaN or In
yGa
1-yN and quantum well layer In
xGa
1-x(wherein y＜x), the periodicity of quantum well is 1～20 to the Multiple Quantum Well that N forms, and wherein barrier layer thickness is 5～20nm, and quantum well layer thickness is 1～10nm;
Described p type GaN layer is the contact layer of preparation p type ohmic contact, and this layer can be the combination of GaN, InAlN, AlGaN, InAlGaN or these several alloys, and thickness is 20nm～3 μ m;
Described n type electrode is combined by multiple layer metal, and electrode material and structure commonly used are Ti/Al/Ti/Au or Ti/Al/Ni/Au, and thickness is respectively 1～10nm/10～500nm/1～10nm/200nm～2 μ m;
Described p type electrode is combined by multiple layer metal, and electrode material and structure commonly used are Ni/Au or Pt/Au, and thickness is respectively 1～100nm/200nm～2 μ m;
Described phosphor powder layer is preferably the mixture coating of blue light, green glow or gold-tinted fluorescent material, and common phosphor material powder is a rare earth aluminate, and its thickness is 10nm～10 μ m;
Described resin shell is made by epoxide resin material routine, that light transmission is good.
The invention provides a kind of preparation method of above-mentioned white light emitting diode, comprise following step:
1) adopt ruby as substrate, the deposition technique that uses conventional semiconductor device is growing GaN resilient coating, n type GaN layer, luminescent layer, p type GaN layer successively thereon, obtains the light-emitting diode that emission wavelength is 300～600nm;
Described ruby substrate is the Al of 0.01～5wt% transiting group metal elements of having mixed
2O
3Thickness is 0.4～0.5mm; Described transiting group metal elements comprises Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn etc.;
Described GaN resilient coating is the combination of GaN, AlGaN, InAiN, InAlGaN or these several alloys, and its thickness is 100nm～10 μ m;
Described n type GaN layer is the combination of GaN, InAlN, AlGaN, InAlGaN or these several alloys, and thickness is 50nm～3 μ m;
Described luminescent layer is the active layer of light-emitting diode, and this layer is by barrier layer GaN or In
yGa
1-yN and quantum well layer In
xGa
1-x(wherein y＜x), the periodicity of quantum well is 1～20 to the Multiple Quantum Well that N forms, and wherein barrier layer thickness is 5～20nm, and quantum well layer thickness is 1～10nm;
Described p type GaN layer is the combination of GaN, InAlN, AlGaN, InAlGaN or these several alloys, and thickness is 20nm～3 μ m;
2) light-emitting diode that step 1) is obtained utilizes conventional SiO
2Mask and photoetching technique are drawn n type electrode 6 and p type electrode 7 respectively from n type GaN layer and p type GaN layer, obtain carrying on the back the light-emitting diode of bright dipping; Then the ruby substrate is thinned to 0.05～0.2mm with the method for mechanical lapping;
Described n type electrode is combined by multiple layer metal, and electrode material and structure commonly used are Ti/Al/Ti/Au or Ti/Al/Ni/Au, and thickness is respectively 1～10nm/10～500nm/1～10nm/200nm～2 μ m;
Described p type electrode is combined by multiple layer metal, and electrode material and structure commonly used are Ni/Au or Pt/Au, and thickness is respectively 1～100nm/200nm～2 μ m;
3) with step 2) substrate back of the light-emitting diode of the back of the body bright dipping that obtains is coated with fluorescent material of all kinds, to obtain required green glow, blue light or Yellow light emitting composition; Encapsulate according to conventional method with resin again, obtain white light emitting diode of the present invention;
Described phosphor powder layer is preferably the mixture coating of blue light, green glow or gold-tinted fluorescent material, and common phosphor material powder is a rare earth aluminate, and its thickness is 1 μ m～1mm;
Described resin shell is made by epoxide resin material routine, that light transmission is good.
The new method that The present invention be directed to the effective red light fluorescent powder of present shortage and cause white light emitting diode to propose in the actual conditions of red spectral band disappearance.The present invention with the ruby that mixes as substrate grow ultraviolet, purple light and blue light-emitting diode structure, excitation source as excited white light light-emitting diodes outer tube layer parcel fluorescent material, in conjunction with the device encapsulation structure of back of the body bright dipping, improve the colour temperature and the color rendering index of white light emitting diode.
White light emitting diode provided by the invention by the attenuate to the ruby substrate, is regulated the assimilation ratio of ruby substrate to light according to the emission wavelength of selected light-emitting diode; And, for example, need select blue light, green light fluorescent powder for use with the white light emitting diode of ultraviolet excitation by adopting different fluorescent material to obtain white light, then need to select for use gold-tinted fluorescent material with blue-light excited white light emitting diode.
Different ruby substrates, its doping content, crystal orientation and thickness are different, and its absorption coefficient to different wavelengths of light is also different.The typical ruby absorption curve that the present invention uses as shown in Figure 2.
Compared with prior art, the advantage of white light emitting diode provided by the invention is:
1, the present invention is by selecting for use one to mix the ruby of transiting group metal elements as substrate, carry out epitaxial growth GaN based light-emitting diode material, under the epitaxial growth condition of the light-emitting diode of optimizing, improve the luminous intensity of red spectral band effectively, reduce the colour temperature of white light and improved the color rendering index of white light, promptly improved the luminous mass of white light emitting diode;
2, method of the present invention has kept existing back of the body light-emitting diode device technology, fluorescent material coating process and resin-encapsulated flow process, under the prerequisite that does not increase device complexity, has fundamentally improved the performance of white light emitting diode.
Description of drawings
Fig. 1 is the schematic diagram of GaN based light-emitting diode;
Fig. 2 is the ruby absorption curves figure that the present invention uses;
Fig. 3 is the schematic diagram of white light emitting diode provided by the invention;
Wherein, 1 substrate, 2GaN resilient coating, 3n type GaN layer, 4 luminescent layers, 5p type GaN layer, 6n type electrode, 7p type electrode, 8 phosphor powder layers, 9 resin shell.
Embodiment
1) (it is the Al of 0.01wt% transiting group metal elements Cr of having mixed to adopt the thick ruby of 0.4mm
2O
3Its absorption curves figure is as shown in Figure 2) as substrate 1, use metal organic-matter chemical gas deposition technology (MOCVD) to grow the n type GaN layer (forming) 3, luminescent layer of GaN resilient coating (forming) 2,500nm of 2 μ m thereon successively (by barrier layer GaN and quantum well layer In by GaN by GaN
0.1Ga
0.9The Multiple Quantum Well in 5 cycles that N forms, wherein the thickness of barrier layer GaN is 10nm, quantum well layer In
0.1Ga
0.9The thickness of N is 3nm) 4, the p type GaN layer (forming) 5 of 200nm by GaN, obtaining emission wavelength is the royal purple light GaN light-emitting diode of 430nm,
As shown in Figure 1;
2) light-emitting diode that step 1) is obtained utilizes conventional SiO
2Mask and photoetching technique are drawn n type electrode 6 and p type electrode 7 from n type GaN layer and p type GaN layer, obtain carrying on the back the light-emitting diode of bright dipping; Then the ruby substrate is thinned to 0.1mm with the method for mechanical lapping;
The material of described n type electrode and structure are that Ti/Al/Ti/Au, its thickness are respectively 2nm/200nm/2nm/1 μ m;
The material of described p type electrode and structure are that Ni/Au, its thickness are respectively 100nm/1 μ m;
3) with step 2) substrate back of the light-emitting diode of the back of the body bright dipping that obtains is coated with gold-tinted and the green light fluorescent powder (ratio is 2: 1) 8 of 30 μ m, to obtain the white-light emitting of required colour temperature; Encapsulate according to conventional method with epoxy resin 9 again, obtain white light emitting diode of the present invention.
Compare with the common white light-emitting diode for preparing by common process, this white light emitting diode prepares on the ruby substrate, and the spectrum of its red spectral band is obviously strengthened, thereby colour temperature is reduced to 17900 ° of K from 18400 ° of K, color rendering index also is improved to 85 from 76, is significantly improved.
1) (it is the Al of 5wt% transiting group metal elements Fe of having mixed to adopt the thick ruby of 0.5mm
2O
3) as substrate 1, use metal organic-matter chemical gas deposition technology (MOCVD) to grow the n type GaN layer 3, luminescent layer of AlGaN resilient coating 2,3 μ m of 500nm thereon successively (by barrier layer In
0.01Ga
0.99N and quantum well layer In
0.12Ga
0.88The Multiple Quantum Well in 10 cycles that N forms, wherein barrier layer In
0.01Ga
0.99The thickness of N is 12nm, quantum well layer In
0.12Ga
0.88The thickness of N is 2nm) the p type InAlGaN of 4,1 μ m and the combination p type layer 5 of GaN, obtaining emission wavelength is the blue light GaN light-emitting diode of 470nm, as shown in Figure 1;
2) light-emitting diode that step 1) is obtained utilizes conventional SiO
2Mask and photoetching technique are drawn n type electrode 6 and p type electrode 7 from n type GaN layer and p type GaN layer, obtain carrying on the back the light-emitting diode of bright dipping; Then the ruby substrate is thinned to 0.15mm with the method for mechanical lapping;
The material of described n type electrode and structure are that Ti/Al/Ni/Au, its thickness are respectively 2nm/200nm/20nm/1 μ m;
The material of described p type electrode and structure are that Pt/Au, its thickness are respectively 100nm/2 μ m;
3) with step 2) substrate back of the light-emitting diode of the back of the body bright dipping that obtains is coated with the gold-tinted fluorescent material 8 of 50 μ m, to obtain the white-light emitting of required colour temperature; Encapsulate according to conventional method with epoxy resin 9 again, obtain white light emitting diode of the present invention.
Compare with the white light emitting diode that obtains by normal conventional technology, this white light emitting diode is done to prepare on the substrate at ruby, the spectrum of its red spectral band is obviously strengthened, thereby colour temperature is reduced to 17800 ° of K from 18200 ° of K, color rendering index also is improved to 84 from 73, is significantly improved.
Claims (10)
1, a kind of white light emitting diode, it comprises the light-emitting diode of a back of the body bright dipping, and the resin shell used of phosphor powder layer on the back side of its substrate and its outer enclosure, it is characterized in that:
The light-emitting diode of described back of the body bright dipping comprises a ruby substrate, is followed successively by GaN resilient coating, n type GaN layer, luminescent layer, p type GaN layer on it, and respectively from n type GaN layer and p type GaN layer draw n type electrode and p type electrode.
2, white light emitting diode as claimed in claim 1 is characterized in that: described ruby substrate is the Al of 0.01～5wt% transiting group metal elements of having mixed
2O
3Thickness is 0.05～0.2mm.
3, white light emitting diode as claimed in claim 1, it is characterized in that: described GaN resilient coating is the transition zone of extension on foreign substrate, the material of this transition zone is the combination of GaN, AlGaN, InAlN, InAlGaN or these several alloys, and its thickness is 100nm～10 μ m.
4, white light emitting diode as claimed in claim 1 is characterized in that: described n type GaN layer is the contact layer of preparation n type ohmic contact, and this layer is the combination of GaN, InAlN, AlGaN, InAlGaN or these several alloys, and thickness is 50nm～3 μ m.
5, white light emitting diode as claimed in claim 1 is characterized in that: described luminescent layer is the active layer of light-emitting diode, and this layer is by barrier layer GaN or In
yGa
1-yN and quantum well layer In
xGa
1-xThe Multiple Quantum Well that N forms, y＜x wherein, the periodicity of quantum well is 1～20, and wherein barrier layer thickness is 5～20nm, and quantum well layer thickness is 1～10nm.
6, white light emitting diode as claimed in claim 1 is characterized in that: described p type GaN layer is the contact layer of preparation p type ohmic contact, and this layer is the combination of GaN, InAlN, AlGaN, InAlGaN or these several alloys, and thickness is 20nm～3 μ m.
7, white light emitting diode as claimed in claim 1 is characterized in that: described n type electrode is Ti/Al/Ti/Au or Ti/Al/Ni/Au, and thickness is respectively 1～10nm/10～500nm/1～10nm/200nm～2 μ m; Described p type electrode is Ni/Au or Pt/Au, and thickness is respectively 1～100nm/200nm～2 μ m.
8, white light emitting diode as claimed in claim 1 is characterized in that: described phosphor powder layer is the mixture coating of blue light, green glow or gold-tinted fluorescent material, and its thickness is 1 μ m～1mm.
9, white light emitting diode as claimed in claim 1 is characterized in that: described resin shell is the shell that epoxide resin material is made.
10, the preparation method of the described white light emitting diode of a kind of claim 1 comprises following step:
1) adopt ruby as substrate, the deposition technique that uses conventional semiconductor device is growing GaN resilient coating, n type GaN layer, luminescent layer, p type GaN layer successively thereon, obtains the light-emitting diode that emission wavelength is 300～600nm;
Described ruby substrate is the Al of 0.01～5wt% transiting group metal elements of having mixed
2O
3Thickness is 0.4～0.5mm;
Described GaN resilient coating is the combination of GaN, AlGaN, InAlN, InAlGaN or these several alloys, and its thickness is 100nm～10 μ m;
Described n type GaN layer is the combination of GaN, InAlN, AlGaN, InAlGaN or these several alloys, and thickness is 50nm～3 μ m;
Described luminescent layer is the active layer of light-emitting diode, and this layer is by barrier layer GaN or In
yGa
1-yN and quantum well layer In
xGa
1-xThe Multiple Quantum Well that N forms, y＜x wherein, the periodicity of quantum well is 1～20, and barrier layer thickness is 5～20nm, and quantum well layer thickness is 1～10nm;
Described p type GaN layer is the combination of GaN, InAlN, AlGaN, InAlGaN or these several alloys, and thickness is 20nm～3 μ m;
2) light-emitting diode that step 1) is obtained utilizes conventional SiO
2Mask and photoetching technique are drawn n type electrode and p type electrode respectively from n type GaN layer and p type GaN layer, obtain carrying on the back the light-emitting diode of bright dipping; Then the ruby substrate is thinned to 0.05～0.2mm with the method for mechanical lapping;
Described n type electrode is Ti/Al/Ti/Au or Ti/Al/Ni/Au, and thickness is respectively 1～10nm/10～500nm/1～10nm/200nm～2 μ m;
Described p type electrode is Ni/Au or Pt/Au, and thickness is respectively 1～100nm/200nm～2 μ m;
3) with step 2) substrate back of the light-emitting diode of the back of the body bright dipping that obtains is coated with fluorescent material of all kinds, to obtain required green glow, blue light or Yellow light emitting composition; Encapsulate according to conventional method with resin again, obtain white light emitting diode of the present invention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100864508A CN1937264A (en) | 2005-09-21 | 2005-09-21 | White light-emitting diode and its preparing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100864508A CN1937264A (en) | 2005-09-21 | 2005-09-21 | White light-emitting diode and its preparing method |
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| Publication Number | Publication Date |
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| CN1937264A true CN1937264A (en) | 2007-03-28 |
Family
ID=37954647
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|---|---|---|---|
| CNA2005100864508A Pending CN1937264A (en) | 2005-09-21 | 2005-09-21 | White light-emitting diode and its preparing method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442095B (en) * | 2007-11-19 | 2011-01-26 | 日进半导体株式会社 | White led chip and manufacture method thereof |
| CN102122689A (en) * | 2011-01-14 | 2011-07-13 | 映瑞光电科技(上海)有限公司 | Multi-quantum well structure and manufacturing method thereof, and light emitting diode |
| CN102122688A (en) * | 2011-01-14 | 2011-07-13 | 映瑞光电科技(上海)有限公司 | Multi-quantum well structure, manufacturing method thereof and light-emitting diode |
| CN102122690A (en) * | 2011-01-14 | 2011-07-13 | 映瑞光电科技(上海)有限公司 | Multi-quantum well structure, light-emitting diode and packaging part of light-emitting diode |
| CN102142492A (en) * | 2011-01-14 | 2011-08-03 | 映瑞光电科技(上海)有限公司 | Multiple quantum well structure, manufacturing method thereof and light emitting diode |
| WO2012031385A1 (en) * | 2010-09-07 | 2012-03-15 | 深圳市众明半导体照明有限公司 | Warm white light led chip with high brightness and high color rendering |
| CN102034912B (en) * | 2009-12-29 | 2015-03-25 | 比亚迪股份有限公司 | Light-emitting diode epitaxial wafer, manufacturing method and manufacturing method of chip |
-
2005
- 2005-09-21 CN CNA2005100864508A patent/CN1937264A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442095B (en) * | 2007-11-19 | 2011-01-26 | 日进半导体株式会社 | White led chip and manufacture method thereof |
| CN102034912B (en) * | 2009-12-29 | 2015-03-25 | 比亚迪股份有限公司 | Light-emitting diode epitaxial wafer, manufacturing method and manufacturing method of chip |
| WO2012031385A1 (en) * | 2010-09-07 | 2012-03-15 | 深圳市众明半导体照明有限公司 | Warm white light led chip with high brightness and high color rendering |
| CN102122689A (en) * | 2011-01-14 | 2011-07-13 | 映瑞光电科技(上海)有限公司 | Multi-quantum well structure and manufacturing method thereof, and light emitting diode |
| CN102122688A (en) * | 2011-01-14 | 2011-07-13 | 映瑞光电科技(上海)有限公司 | Multi-quantum well structure, manufacturing method thereof and light-emitting diode |
| CN102122690A (en) * | 2011-01-14 | 2011-07-13 | 映瑞光电科技(上海)有限公司 | Multi-quantum well structure, light-emitting diode and packaging part of light-emitting diode |
| CN102142492A (en) * | 2011-01-14 | 2011-08-03 | 映瑞光电科技(上海)有限公司 | Multiple quantum well structure, manufacturing method thereof and light emitting diode |
| CN102122689B (en) * | 2011-01-14 | 2012-10-03 | 映瑞光电科技(上海)有限公司 | Multi-quantum well structure and manufacturing method thereof, and light emitting diode |
| CN102122688B (en) * | 2011-01-14 | 2012-10-03 | 映瑞光电科技(上海)有限公司 | Multi-quantum well structure, manufacturing method thereof and light-emitting diode |
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