CN1937212A - GaN device packaging base structure and its manufacturing method - Google Patents
GaN device packaging base structure and its manufacturing method Download PDFInfo
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- CN1937212A CN1937212A CN 200610096639 CN200610096639A CN1937212A CN 1937212 A CN1937212 A CN 1937212A CN 200610096639 CN200610096639 CN 200610096639 CN 200610096639 A CN200610096639 A CN 200610096639A CN 1937212 A CN1937212 A CN 1937212A
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Abstract
The invention discloses new type base structure for packaging GaN device and manufacturing method by using SiC/Al being as base body with diamond radiating fins being inlaid in order to solve present status that thermal diffusivity cannot be met to requirement by packaging alloys such as tungsten/copper (W/Cu), molybdenum/copper (Mo/Cu) adopted by semiconductor devices generally. The base structure includes SiC/Al base body with/without sidestep on upper face. Diamond radiating fins are inlaid on surface of base body. Area of radiating fins is matched to GaN device to be installed. Being in favor of carrying out integral electroplating for composite structure of base body and diamond radiating fins, metallation layer is prepared on surface of the structure. Features are: light weight, high capacity of heat dissipation, low cost, wide application, and industrialized production.
Description
Technical field
The present invention relates to the understructure and the manufacture method thereof of semiconductor body, especially a kind of SiC/Al understructure and manufacture method thereof of good heat dissipation effect, specifically a kind of GaN device packaging base structure and manufacture method thereof.
Background technology
Encapsulation such as tungsten copper (W/Cu), molybdenum copper (Mo/Cu) alloy, be use comparatively extensively, used for electronic packaging alloy that thermophysical property is excellent, the more employing of present military electronic devices and components its as encapsulation base plate.Yet tungsten copper (W/Cu), molybdenum copper (Mo/Cu) not only complex process, cost are higher, and maximum shortcoming is that its proportion is up to 17g/cm
3, concerning the space equipment that current lift-launch electronic devices and components quantity sharply expands, this can't satisfy the Aero-Space microelectronics system the lightweight demand for development, be not suitable in the space electronic change system, adopting.By contrast, oxygen-free copper and Kovar alloy are as other two kinds of candidate materials of encapsulation base plate, respectively because too high thermal coefficient of expansion (17ppm) and low excessively heat dissipation ability (14～17W/mK), and higher this common drawback of proportion, more be difficult to extensive use in the high military electronic engineering of reliability requirement.
High silicon-carbide particle content aluminum matrix composite (SiC/Al), its coefficient of thermal expansion are accurately controlled within the specific limits, can mate with the fine underground heat of semiconductor chips such as Si, GaAs, GaN, SiC, and proportion is at 3g/cm
3Below, thermal conductivity is greater than 200W/mK, and cost is lower, has advantages such as low bulk, high heat conduction, lightweight, low cost simultaneously, with substitute traditional package metals, can satisfy lightweight, cost degradation and highly reliable, the long-life designing requirement of advanced military electronic devices.The SiC/Al electronic packaging composite material has begun to be applied to military engineering at present at home, and has formed batch production capacity power, has issued national military standard, passed through the evaluation of Chinese military electronic component quality certification committee.This density of material less than W/Cu 20%, Mo/Cu 30%, the Kovar alloy 2/3, so the lightweight advantage is very remarkable.This composite material and electronic ceramic substrate have good expansion matching, and its thermal conductivity is near 240W/mK.
But high speed development along with information technology, the integrated level of the chip in the current electronic devices and components is more and more higher, and power is increasing, and device volume is littler, especially along with third generation The Development of Wide Band Gap Semiconductor, the power density of device has reached 1000W/cm especially
2More than, more and more higher to the heat radiation requirement of encapsulation.(SiC/Al) thermal conductivity of composite material 200W/mK can not satisfy the needs of device heat dissipation.
Diamond can have high thermal conductivity, is suitable for heat sink as electronic devices and components.At present domestic can be as heat sink diamond thermal conductivity up to 1500W/mK.Yet high-end diamond heat-sink product cost is very high, and the product that is about 0.5mm with thickness commonly used is an example, and every square millimeter price is about 10 yuans.Therefore, adopt diamond heat sink as electronic devices and components in large area, cost is accepted than difficult.So adopting the less diamond heat sink of area in the position that chip is installed is a kind of development trend, it can increase substantially the heat-sinking capability of encapsulating products.
The used for electronic device diamond heat sink often needs to be bonded together with metal (also can be the metal-base composites that comprises SiC/Al) and to form sub-assembly, and both not only will have high heat conductance, and require highly reliable combination.Yet the diamond heat sink combination traditional with encapsulating alloy is soldering.Soldering not only technology is comparatively complicated, and reliability is not high yet, especially is easy to occur wandering not enough, the not congruent defective of filling of braze.This not only makes interface resistance very big, influences heat dissipation, also influences bond strength, because the thermal stress that variations in temperature produces is bigger, this will cause the braze fatigability to destroy and components and parts were lost efficacy components and parts in long-term work.Therefore, demand developing the associated methods of brand-new highly reliable, low thermal resistance, high adhesion strength diamond fin and encapsulation alloy (or SiC/Al composite material) urgently.
Summary of the invention
The objective of the invention is at the tungsten copper (W/Cu) that generally adopts in the present semiconductor body, the present situation that the molybdenum copper existing thermal diffusivities of encapsulation alloy such as (Mo/Cu) can not meet the demands, invent a kind of SiC/Al of utilization and be inlaid with the novel GaN device packaging base structure of diamond heat sink simultaneously, invent simultaneously that a kind of technology is easy to realize, diamond heat sink and the method for attachment of base matrix and the integral manufacturing method of understructure of bond strength height and high reliability as end dress matrix.
Technical scheme of the present invention is:
A kind of GaN device packaging base structure, comprise that upper surface has step or do not have the SiC/Al base matrix of step, this base integral body is electroplate with nickel dam and gold layer, it is characterized in that being inlaid with diamond heat sink at described base matrix surface, its area is complementary with the GaN device of being installed, and its surface is manufactured with and helps base matrix and the whole electroplated metal layer of diamond heat sink.
The upper surface flush of the upper surface of described diamond heat sink and base matrix or a little less than the upper surface of base matrix.
The metal layer on the surface of described diamond heat sink is made up of nickel dam and gold layer, and nickel dam contacts with diamond surface, and golden layer covers on the nickel dam.
The method of manufacturing GaN device packaging base structure of the present invention mainly comprises following processing step:
At first, inlay diamond heat sink at SiC/Al base matrix surface;
Secondly, make the surface metalation of above-mentioned diamond heat sink;
The 3rd, to base matrix and whole plated metal nickel dam of diamond heat sink and gold layer, can adopt conventional electroplating technology to be realized.
Wherein:
The processing step of inlaying diamond heat sink at SiC/Al base matrix surface mainly comprises:
The first step, batching is chosen aluminium alloy ingot bar and silicon-carbide particle according to the component of the SiC/Al base matrix that will prepare;
Second step, a carborundum material to be put into mould form the SiC particle stack, the lower surface that diamond heat sink is placed on this accumulation body is the setting position of bottom surface;
The 3rd step, the aluminium alloy ingot bar is placed the SiC particle stack upper surface of mould, the stove that above-mentioned mould is put into the blanket of nitrogen stove is heated to 800 ℃～950 ℃ combined temp, is incubated 1～5 hour, obtains being inlaid with the compound base of SiC/Al of diamond heat sink.
The processing step of the surface metalation of diamond heat-sink sheet is mainly comprised:
The first step is respectively charged into nickel target and gold target in the rf magnetron sputtering platform;
In second step, the base of required sputter is wiped examination, dried up and be placed in the vacuum chamber; Can adopt toluene, acetone and absolute ethyl alcohol cotton balls to wipe examination respectively, and dry up the back load facility with nitrogen;
In the 3rd step, gas pressure in vacuum is extracted into 0.20～0.30Pa;
In the 4th step, the radio-frequency power that adds 200W carries out sputter to the nickel target, continues 5～10 fens clock times, makes nickel layer thickness reach 1000 ± 100 ; The radio-frequency power that adds 120W carries out sputter to gold target, continues 1～3 fen clock time, makes golden layer thickness reach 1000 ± 100 .
After metallization finishes, can adopt conventional electroplating technology, also can adopt electroplating technology shown in Figure 3 to electroplate base matrix and whole electroless nickel layer of diamond heat sink and gold layer.
The present invention has the following advantages:
The present invention adopts the compound base of SiC/Al to make device outer case, has solved the heat dissipation problem of GaN device well.For density of heat flow rate is 1108W/cm
2Device, adopting the SiC/Al base material to inlay diamond heat sink encapsulates as the shell of base, junction temperature when device is operated at full capacity has reduced more than 100 ℃ than the shell with W-Cu material base, and the maximum temperature in the time of can guaranteeing device work is less than 451K (178 ℃).Simultaneously, owing to adopted SiC/Al as base material, the W-Cu base of the weight ratio routine of shell has alleviated many, and being particularly suitable for has the space environment of strict demand to use to weight.Main raw material(s) SiC particle used in the present invention and aluminium alloy are with low cost, only adopt the less diamond heat sink of size in the part of product, therefore can reduce cost significantly when increasing properties of product.The process that the present invention proposes is simple, operation is succinct, and the preparation of the SiC/Al electronic packaging composite material compound two procedures with diamond heat sink is united two into one, and not only saved the soldering step, and the original position compound interface thermal resistance that obtains is lower.Have lightweight, advantage that heat dissipation ability is strong with resulting product of the present invention, and widely applicable, cost is low, simple for production, be suitable for suitability for industrialized production.
Description of drawings
Fig. 1 is a GaN device packaging base structure schematic diagram of the present invention.
Fig. 2 is the plan structure schematic diagram of Fig. 1.
Fig. 3 is the electroplating technology schematic flow sheet in the embodiment of the invention.
Embodiment
The present invention is further illustrated for following structure drawings and Examples.
As shown in Figure 1, 2, 3.
A kind of GaN device packaging base structure, comprise SiC/Al base matrix 1, one step 2 that exceeds its upper surface is arranged on described base matrix 1, on step 2, be inlaid with diamond heat sink 3, the area of diamond heat sink 3 and the GaN device of being installed are complementary, the upper surface flush of the upper surface of diamond heat sink 3 and step 2 (or base matrix 1) or a little less than the upper surface of step 2 (or base matrix).Surface at described diamond heat sink 3 is manufactured with metal layer, and metal layer is made up of nickel dam and gold layer, and nickel dam contacts with diamond surface, the gold layer covers on the nickel dam, as Fig. 1, shown in 2, final GaN device is fixedly mounted on the coating of described diamond heat sink 3.
The manufacture method of described GaN device packaging base structure mainly comprises following processing step:
At first, inlay diamond heat sink at SiC/Al base matrix surface, its step mainly comprises:
The first step, batching is chosen aluminium alloy ingot bar and silicon-carbide particle according to the component of the SiC/Al base matrix that will prepare;
Second step, a carborundum material to be put into mould form the SiC particle stack, the lower surface that diamond heat sink is placed on this accumulation body is the setting position of bottom surface;
The 3rd step, the aluminium alloy ingot bar is placed the SiC particle stack upper surface of mould, the stove that above-mentioned mould is put into the blanket of nitrogen stove is heated to 800 ℃～950 ℃ combined temp, is incubated 1～5 hour, obtains being inlaid with the compound base of SiC/Al of diamond heat sink.
Secondly, make the surface metalation of above-mentioned diamond heat sink, the main technique step comprises:
The first step is respectively charged into nickel target and gold target in the rf magnetron sputtering platform;
In second step, the base of required sputter is wiped examination, dried up and be placed in the vacuum chamber; Can adopt toluene, acetone and absolute ethyl alcohol cotton balls to wipe examination respectively, and dry up the back load facility with nitrogen;
In the 3rd step, gas pressure in vacuum is extracted into 0.20～0.30Pa;
In the 4th step, the radio-frequency power that adds 200W carries out sputter to the nickel target, continues 5～10 fens clock times, makes nickel layer thickness reach 1000 ± 100 ; The radio-frequency power that adds 120W carries out sputter to gold target, continues 1～3 fen clock time, makes golden layer thickness reach 1000 ± 100 .
At last, to carry out whole electroless nickel layer and gold layer by SiC/Al base matrix and the compound base of having inlayed diamond heat sink, so that for next step device welding lays the foundation, plating both can adopt common process to be realized, also can adopt electroplating technology shown in Figure 3 to electroplate, details are as follows:
As shown in Figure 3, with organic solvent (aviation gasoline or toluene, acetone) oil removing, use neutral chemical deoiling and degreasing more earlier.Etch (bright dipping) adds HF again with acid, notices that the control time was less than 15 seconds.Because of the SiC/Al material is a composite material, in Fig. 4, black region is the SiC particle, and white portion is Al, and the SiC particle is corrosion hardly in acid, and Al acutely corrodes, so etch control does not with great difficulty cause point-like pit (as Fig. 5) at surface of the work.Because be the composite material that contains nonmetal composition,, nickel preplating uses chemical nickel plating so need not electroplating, and phosphorus low-stress nickel prescription in selecting for use, thickness does not surpass 3um, in order to avoid the adhesion between too big influence of coating stress and matrix. anneal in hydrogen atmosphere with the stove heating and cooling, 450 ℃ are incubated 2 minutes, can eliminate the stress of prime coat well, the adhesion of enhancing and parent metal. because of the acutely corrosion in acid of the Al in the base material, therefore can not carry out acid-wash activation, annealing is come out of the stove the back for avoiding acid-wash activation, carries out chemical nickel plating (＜5 minutes) immediately again, Direct Electroplating low-stress nickel then, gold-plated in advance, gold-plated, annealing (450 ℃).Gold plating solution is neutral citrate system.
Employed electroplating formula is:
Formula for chemical plating nickel low-stress nickel prescription
Nickelous sulfate 30-40g/l nickelous sulfate 220-260g/l
Natrium citricum 30-40g/l nickel chloride 30-40g/l
Inferior sodium phosphate 12-16g/l boric acid 35-50g/l
Additive F 2g/l magnesium sulfate 60-70g/l
PH 8-10 lauryl sodium sulfate 0.01g/l
Temperature 70-90 PH 3-4 electric current 0.6-1A/dm
2
Part that the present invention does not relate to is all same as the prior art.
Claims (6)
1, a kind of GaN device packaging base structure, comprise that upper surface has step or do not have the SiC/Al base matrix of step, it is characterized in that being inlaid with diamond heat sink at described base matrix surface, its area is complementary with the GaN device of being installed, and its surface is manufactured with and helps base matrix and diamond heat sink composite construction are carried out whole electroplated metal layer.
2, GaN device packaging base structure according to claim 1 is characterized in that the upper surface flush of the upper surface of described diamond heat sink and base matrix or a little less than the upper surface of base matrix.
3, GaN device packaging base structure according to claim 1 is characterized in that the metal layer on the surface of described diamond heat sink is made up of nickel dam and gold layer, and nickel dam contacts with diamond surface, and golden layer covers on the nickel dam.
4, a kind of method of making the described GaN device packaging base structure of claim 1 is characterized in that it comprises following processing step:
(1) inlays diamond heat sink at SiC/Al base matrix surface;
(2) make the surface metalation of above-mentioned diamond heat sink;
(3) to base matrix and whole plated metal nickel dam of diamond heat sink composite construction and gold layer.
5, the method for manufacturing according to claim 4 GaN device packaging base structure is characterized in that the described processing step of inlaying diamond heat sink at SiC/Al base matrix surface mainly comprises:
The first step, batching is chosen aluminium alloy ingot bar and silicon-carbide particle according to the component of the SiC/Al base matrix that will prepare;
Second step, silicon-carbide particle to be put into mould form the SiC particle stack, the lower surface that diamond heat sink is placed on this accumulation body is the setting position of bottom surface;
The 3rd step placed the SiC particle stack upper surface of mould with the aluminium alloy ingot bar, and the stove that above-mentioned mould is put into the blanket of nitrogen stove is heated to 800 ℃～950 ℃ combined temp, is incubated 1～5 hour, obtains being inlaid with the SiC/Al base of diamond heat sink.
6, the method for manufacturing GaN device packaging base structure according to claim 4 is characterized in that the described processing step of diamond heat sink surface metalation that makes mainly comprises:
A) in the rf magnetron sputtering platform, be respectively charged into nickel target and gold target;
B) the compound base of required sputter wiped examination, dry up and be placed in the vacuum chamber;
C) gas pressure in vacuum is extracted into 0.20～0.30Pa;
D) radio-frequency power that adds 200W carries out sputter to the nickel target, continues 5～10 fens clock times, makes nickel layer thickness reach 1000 ± 100 ;
E) radio-frequency power that adds 120W carries out sputter to gold target, continues 1～3 fen clock time, makes golden layer thickness reach 1000 ± 100 .
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877164A (en) * | 2017-01-12 | 2017-06-20 | 广东工业大学 | A kind of high-power semiconductor laser package module and method |
| CN113611695A (en) * | 2021-07-12 | 2021-11-05 | 南京中电芯谷高频器件产业技术研究院有限公司 | Van-level GaN-based solid-state power source system and manufacturing method thereof |
| CN115692216A (en) * | 2022-11-10 | 2023-02-03 | 哈尔滨铸鼎工大新材料科技有限公司 | Electronic packaging structure formed by composite molding of dissimilar materials and preparation method thereof |
| CN117855157A (en) * | 2024-03-07 | 2024-04-09 | 中国电子科技集团公司第二十九研究所 | Encapsulation structure and method of millimeter wave solid-state power amplifier |
-
2006
- 2006-10-16 CN CN 200610096639 patent/CN1937212A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877164A (en) * | 2017-01-12 | 2017-06-20 | 广东工业大学 | A kind of high-power semiconductor laser package module and method |
| CN113611695A (en) * | 2021-07-12 | 2021-11-05 | 南京中电芯谷高频器件产业技术研究院有限公司 | Van-level GaN-based solid-state power source system and manufacturing method thereof |
| CN115692216A (en) * | 2022-11-10 | 2023-02-03 | 哈尔滨铸鼎工大新材料科技有限公司 | Electronic packaging structure formed by composite molding of dissimilar materials and preparation method thereof |
| CN115692216B (en) * | 2022-11-10 | 2023-04-28 | 哈尔滨铸鼎工大新材料科技有限公司 | Electronic packaging structure formed by compounding different materials and preparation method thereof |
| CN117855157A (en) * | 2024-03-07 | 2024-04-09 | 中国电子科技集团公司第二十九研究所 | Encapsulation structure and method of millimeter wave solid-state power amplifier |
| CN117855157B (en) * | 2024-03-07 | 2024-05-14 | 中国电子科技集团公司第二十九研究所 | Encapsulation structure and method of millimeter wave solid-state power amplifier |
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