CN1933140A - Internal connection line structure - Google Patents
Internal connection line structure Download PDFInfo
- Publication number
- CN1933140A CN1933140A CN 200510103866 CN200510103866A CN1933140A CN 1933140 A CN1933140 A CN 1933140A CN 200510103866 CN200510103866 CN 200510103866 CN 200510103866 A CN200510103866 A CN 200510103866A CN 1933140 A CN1933140 A CN 1933140A
- Authority
- CN
- China
- Prior art keywords
- internal connection
- layer
- wire structure
- those
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
This invention relates to an inner connection structure suitable for welding pad region of a base, which already includes a semiconductor circuit and a welding pad corresponding to the welding pad region, the inner connection structure includes a first dielectric layer, multiple dielectric window plugs, a second dielectric and multiple contact window plugs , the pattern conductor layer includes an assistant layer and multiple first leads, the assistant layer has multiple gaps and the first lead is matched between the assistant layers and passes through the welding pad region via the gaps, the first dielectric layer is matched between the pattern conductor layer and the pad and covers the conductor layer, the dielectric window plugs are matched in the first dielectric layer for connecting to the assistant layers and the pad, the second dielectric layer is set between the base and the pattern conductor layer and covers the semiconductor circuit, the contact window plugs are set in the second dielectric layer for connecting the semiconductor circuit and the first lead.
Description
Technical field
The present invention relates to a kind of semiconductor structure, particularly relate to a kind of internal connection-wire structure.
Background technology
After semiconductor process techniques marches toward deep-sub-micrometer (deep micron) field, the problem that many scripts need not be considered will be dwindled gradually because of size and be highlighted.Reduce chip size in order to save area, the general practice is that electrostatic discharge circuit (electrostatic discharge circuit) is put under the weld pad (pad).
Existing weld pad is when coming routing to engage (wire bonding) with hot pressurization (thermocompression), because it is very big to put on the pressure of weld pad, so often take place that dielectric layer splits or even weld pad situation about coming off, cause encapsulation output and confidence level (reliability) not high.The main cause that this problem takes place is that the adhesive force between dielectric layer and the metal level is not enough, and the stress that is produced when routing engages puts on event on the dielectric layer.
Therefore, the semiconductor element under weld pad is affected, and guarantees the joint of success, and the part of weld pad need be used two metal layers usually, and the road coiling of could powering of the metal level of all the other lower floors is used.And for using the less technology of the metal level number of plies, the metal level number of plies that can be used to do the circuit backguy just seems not enough.
Summary of the invention
Purpose of the present invention is providing a kind of internal connection-wire structure exactly, makes the metal level of weld pad below can be used as the usefulness of intraconnections.
Another object of the present invention provides a kind of internal connection-wire structure and avoids the beneath semiconductor circuit of weld pad to be affected when engaging, and the joint that assures success.
The present invention proposes a kind of internal connection-wire structure, be applicable to the pad zone of substrate, and had semiconductor circuit in the substrate of pad zone, and with the corresponding weld pad of pad zone, this internal connection-wire structure comprises a patterning conductor layer, one first dielectric layer, a plurality of interlayer hole connector, one second dielectric layer and a plurality of contact hole connector.Patterning conductor layer comprises an auxiliary layer and a plurality of first lead.Auxiliary layer has a plurality of gaps, and conductor configurations is between auxiliary layer, and passes pad zone by the gap.First dielectric layer is disposed between patterning conductor layer and the weld pad, and the overlay pattern conductor layer.The interlayer hole connector is disposed in first dielectric layer, in order to connect auxiliary layer and weld pad.Second dielectric layer is disposed between substrate and the patterning conductor layer, and covers semiconductor circuit.The contact hole connector is disposed in second dielectric layer, in order to be electrically connected the semiconductor circuit and first lead.
According to the described internal connection-wire structure of the embodiment of the invention, above-mentioned auxiliary layer for example is a loop-like conductor layer, and it is disposed at corresponding pad zone peripheral region.
According to the described internal connection-wire structure of the embodiment of the invention, above-mentioned auxiliary layer can also have a plurality of block conductor layers, and these block conductor layers are positioned at the inboard of loop-like conductor layer.
According to the described internal connection-wire structure of the embodiment of the invention, above-mentioned auxiliary layer can be the stratiform conductor layer, and first lead is between the stratiform conductor layer.
According to the described internal connection-wire structure of the embodiment of the invention, the material of the above-mentioned auxiliary layer and first lead for example is a metal.
According to the described internal connection-wire structure of the embodiment of the invention, the material of the above-mentioned auxiliary layer and first lead for example is aluminium (Al) or copper (Cu).
According to the described internal connection-wire structure of the embodiment of the invention, the material of above-mentioned weld pad for example is a metal.
According to the described internal connection-wire structure of the embodiment of the invention, the above-mentioned contact hole connector and the material of interlayer hole connector for example are metal.
According to the described internal connection-wire structure of the embodiment of the invention, the first above-mentioned dielectric layer and the material of second dielectric layer for example are silica.
According to the described internal connection-wire structure of the embodiment of the invention, above-mentioned semiconductor element for example is static discharge (electrostatic discharge, ESD) protective circuit.
According to the described internal connection-wire structure of the embodiment of the invention, a plurality of second leads can also be arranged, be disposed at the patterning conductor layer below.
The present invention also proposes a kind of internal connection-wire structure, be applicable to the pad zone of substrate, and had semiconductor circuit in the substrate of pad zone, and with the corresponding weld pad of pad zone, this internal connection-wire structure comprises a plurality of patterning conductor layer, a plurality of first dielectric layer, a plurality of interlayer hole connector, one second dielectric layer and a plurality of contact hole connector.Wherein, patterning conductor layer comprises an auxiliary layer and a plurality of first lead.Auxiliary layer has a plurality of gaps, and conductor configurations is between auxiliary layer, and passes pad zone by the gap.First dielectric layer be disposed between the patterning conductor layer and the patterning conductor layer and weld pad of the superiors between, and overlay pattern conductor layer.The interlayer hole connector is disposed in first dielectric layer, in order to the connection auxiliary layer, and the auxiliary layer and the weld pad of the patterning conductor layer of the connection the superiors.Second dielectric layer is disposed at substrate and undermost this patterning conductor layer, and covers semiconductor circuit.The contact hole connector is disposed in second dielectric layer, in order to be electrically connected first lead of semiconductor circuit and undermost patterning conductor layer.
The present invention is because interconnecting with metal interlayer hole connector between weld pad and the auxiliary layer and between each auxiliary layer, to increase the adhesive force between each rete, avoided when engaging, the adhesive force between each rete and dielectric layer is not enough and drawn back, so that structure suffers damage.In addition, the patterning conductor layer among the present invention has a plurality of gaps, the road coiling of can powering, and lead can be pulled to that pad zone is outer to be connected with other semiconductor element.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is the generalized section according to the internal connection-wire structure that one embodiment of the invention illustrated.
Fig. 2 A is the top view according to patterning conductor layer in the internal connection-wire structure that one embodiment of the invention illustrated.
Fig. 2 B is the top view according to patterning conductor layer in the internal connection-wire structure that another embodiment of the present invention illustrated.
Fig. 2 C is the top view according to patterning conductor layer in the internal connection-wire structure that yet another embodiment of the invention illustrated.
Fig. 3 is the generalized section according to the internal connection-wire structure that another embodiment of the present invention illustrated.
Fig. 4 is the generalized section according to the internal connection-wire structure that yet another embodiment of the invention illustrated.
The simple symbol explanation
100: substrate
101: grid
103: gate oxide
104: weld pad
105: source/drain regions
106,306: auxiliary layer
107: aim at metal silicide layer voluntarily
108,308,408: lead
109: pad zone
110,112,310,410: dielectric layer
114,314,414: the interlayer hole connector
116: the contact hole connector
117: the gap
118: block conductor layer
Embodiment
Fig. 1 is the generalized section according to the internal connection-wire structure that the embodiment of the invention illustrated.Fig. 2 A is the top view according to auxiliary layer in the internal connection-wire structure that one embodiment of the invention illustrated.Please be simultaneously with reference to Fig. 1 and Fig. 2 A, internal connection-wire structure of the present invention is applicable to the pad zone 109 of substrate 100, and had in the substrate 100 of pad zone 109 semiconductor circuit and with pad zone 109 corresponding weld pads 104.Wherein, the material of weld pad 104 is a metal for example, and semiconductor circuit for example is an ESD protection circuit.ESD protection circuit for example comprise grid 101, gate oxide 103, source/drain regions 105 and be used for reducing source/drain regions 105 resistance aim at metal silicide (salicide) layer 107 voluntarily.
In the present embodiment, internal connection-wire structure is to be made of patterning conductor layer, interlayer hole connector 114, contact hole connector 116 and 110,112 of dielectric layers.Dielectric layer 112 is disposed in the substrate 100, and covers semiconductor circuit.Wherein, the material of dielectric layer 112 for example is a silica.The top of dielectric layer 112 disposes patterning conductor layer, and patterning conductor layer comprises auxiliary layer 106 and lead 108, and contact hole connector 116 is disposed in the dielectric layer 112.The material of contact hole connector 116 for example is a metal, in order to be electrically connected semiconductor circuit and lead 108, and auxiliary layer 106 is for example for being looped around the loop-like conductor layer of pad zone 109 peripheries, it has a plurality of gaps 117, makes the lead 108 that is positioned at the loop-like conductor layer inboard to pull out pad zone 109 by gap 117.Therefore, the semiconductor circuit that is positioned at weld pad 104 belows can pass through contact hole connector 116 and lead 108, and is connected with pad zone 109 any other semiconductor element outward.
What deserves to be mentioned is that the configuration of lead 108 is not exceeded shown in Fig. 2 A.In addition, lead 108 for example is aluminium or copper with the material of auxiliary layer 106.In addition, under general situation, as long as the width in gap 116 can allow lead 108 pass and can not cause short circuit.In one embodiment, the width in gap 116 for example is 1.5 times of lead 108 width.
Please continue with reference to Fig. 1 and Fig. 2 A, dielectric layer 110 is disposed between patterning conductor layer and the weld pad 104, and covers auxiliary layer 106 and lead 108, to separate auxiliary layer 106 and lead 108, avoids the two to contact and produces short circuit.Wherein, the material of dielectric layer 110 for example is a silica.Interlayer hole connector 114 is disposed in the dielectric layer 110 and can be covered with on auxiliary layer 106.The material of interlayer hole connector 114 for example is a metal, be commonly referred to as metal interlayer hole (metal via, MVIA) connector, its objective is the adhesive force that is used for increasing weld pad 104 and entire chip, to avoid behind joint, have only dielectric layer 110 between auxiliary layer 106 and the weld pad 104, make that adhesive force is not enough and drawn back.
In addition, the auxiliary layer 106 in the internal connection-wire structure of the present invention except being the above-mentioned loop-like conductor layer that is looped around pad zone 109 peripheries, can also be other any pattern form.
Fig. 2 B is the top view according to auxiliary layer in the internal connection-wire structure that another embodiment of the present invention illustrated.Please refer to Fig. 2 B, in the present embodiment, auxiliary layer 106 for example comprises loop-like conductor layer and a plurality of block conductor layer 118 that is looped around pad zone 109 peripheries, and block conductor layer 118 is positioned at the inboard of loop-like conductor layer and any zone outside the lead 108.Similarly, also be covered with interlayer hole connector 114 on the block conductor layer 118, to increase the adhesive force of weld pad 104 and entire chip.In addition, the shape of block conductor layer 118 is not exceeded shown in Fig. 2 A with configuration yet.
Fig. 2 C is the top view according to auxiliary layer in the internal connection-wire structure that yet another embodiment of the invention illustrated.With reference to Fig. 2 C, in the present embodiment, auxiliary layer 106 is the stratiform conductor layer for example, and lead 108 is positioned among the stratiform conductor layer, that is to say, the place of non-lead 108 processes is all conductor layer.Similarly, also dispose interlayer hole connector 114 on the stratiform conductor layer and be connected to weld pad 104, to increase the adhesive force of weld pad 104 and entire chip.
Certainly, auxiliary layer 106 can also be that the situation demand is other pattern form except above-mentioned three kinds of pattern forms, in this not narration one by one.
What deserves to be mentioned is that in other embodiments, internal connection-wire structure of the present invention can also be the structure with multi-layered patterned conductor layer.Fig. 3 is the generalized section according to the internal connection-wire structure that another embodiment of the present invention illustrated.In this kind structure, have two layer pattern conductor layers, this two layer patterns conductor layer comprises the auxiliary layer 306 and lead 308 that is positioned on the dielectric layer 110 respectively, and, connect auxiliary layers 306 and weld pads 104 by interlayer hole connector 314 by interlayer hole connector 114 connection auxiliary layers 106 and 306.Similarly, lead 308 is drawn out to outside the pad zone 109 by the gap of auxiliary layer 306.In addition, dielectric layer 310 is disposed between auxiliary layer 306 and the weld pad 104, and covers auxiliary layer 306 and lead 308.In addition, in the present embodiment, the pattern form of auxiliary layer 306 can be any or combination in above-mentioned three kinds, can also be other shape.
In other embodiments, internal connection-wire structure of the present invention can also have three layers, four layers or more multi-layered patterning conductor layer, and the pattern form of the auxiliary layer in each layer pattern conductor layer can be respectively any in above-mentioned three kinds.In addition, keep apart mutually with dielectric layer between each patterning conductor layer, and interconnect auxiliary layer in each patterning conductor layer, so just these auxiliary layers can be considered as the some of weld pad, to increase adhesive force with the interlayer hole connector.
In addition, in certain embodiments, the top of semiconductor circuit also can be general existing metal interconnecting structure, and other rete that is positioned at the weld pad below is then same as described above.
Fig. 4 is the generalized section according to the internal connection-wire structure that yet another embodiment of the invention illustrated.Please refer to Fig. 4, in the present embodiment, contact hole connector 116 connects lead 408 and source/drain regions 105, and the interlayer hole connector 414 that is arranged in dielectric layer 410 then is electrically connected lead 108 with 408.
In sum, in internal connection-wire structure of the present invention, all interconnect between weld pad and auxiliary layer and each auxiliary layer with metal interlayer hole connector, and the visual demand of each auxiliary layer and be made as various patterns, to increase adhesive force each other, and then be used as the some of weld pad, avoid when engaging, being drawn back because of adhesive force is not enough.
In addition, auxiliary layer in the patterning conductor layer is because of having a plurality of gaps, and the road that can power makes semiconductor circuit can be configured in the weld pad below as the usefulness of coiling, and lead is pulled to and fills up that the district is outer to be connected with other semiconductor element, and then reduced the size of chip by these gaps.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (22)
1, a kind of internal connection-wire structure is applicable to a pad zone of a substrate, and had in this substrate of this pad zone the semiconductor circuit and with the corresponding weld pad of this pad zone, this internal connection-wire structure comprises:
One patterning conductor layer is disposed at this weld pad below, and this patterning conductor layer comprises:
One auxiliary layer, it has a plurality of gaps; And
A plurality of first leads are disposed between this auxiliary layer, and pass this pad zone by those gaps;
One first dielectric layer is disposed between this patterning conductor layer and this weld pad, and covers this patterning conductor layer;
A plurality of interlayer hole connectors are disposed in this first dielectric layer, in order to connect this auxiliary layer and this weld pad;
One second dielectric layer is disposed between this substrate and this patterning conductor layer, and covers this semiconductor circuit; And
A plurality of contact hole connectors are disposed in this second dielectric layer, in order to be electrically connected this semiconductor circuit and those first leads.
2, internal connection-wire structure as claimed in claim 1, wherein this auxiliary layer comprises a loop-like conductor layer, is disposed at should the pad zone peripheral region.
3, internal connection-wire structure as claimed in claim 2, wherein this auxiliary layer also comprises a plurality of block conductor layers, is positioned at the inboard of this loop-like conductor layer.
4, internal connection-wire structure as claimed in claim 1, wherein this auxiliary layer is a stratiform conductor layer, and those first leads are between this stratiform conductor layer.
5, internal connection-wire structure as claimed in claim 1, wherein the material of this auxiliary layer and those first leads comprises metal.
6, internal connection-wire structure as claimed in claim 5, wherein the material of this auxiliary layer and those first leads comprises aluminium or copper.
7, internal connection-wire structure as claimed in claim 1, wherein the material of this weld pad comprises metal.
8, internal connection-wire structure as claimed in claim 1, wherein the material of those contact hole connectors and those interlayer hole connectors comprises metal.
9, internal connection-wire structure as claimed in claim 1, wherein the material of this first dielectric layer and this second dielectric layer comprises silica.
10, internal connection-wire structure as claimed in claim 1, wherein this semiconductor circuit comprises ESD protection circuit.
11, internal connection-wire structure as claimed in claim 1 also comprises a plurality of second leads, is disposed at this patterning conductor layer below.
12, a kind of internal connection-wire structure is applicable to a pad zone of a substrate, and had in this substrate of this pad zone the semiconductor circuit and with the corresponding weld pad of this pad zone, this internal connection-wire structure comprises:
A plurality of patterning conductor layer are disposed at this weld pad below, and respectively this patterning conductor layer comprises:
One auxiliary layer, it has a plurality of gaps; And
A plurality of first leads are disposed between this auxiliary layer, and pass this pad zone by those gaps;
A plurality of first dielectric layers are disposed between those patterning conductor layer, and between this patterning conductor layer and this weld pad of the superiors, and cover those patterning conductor layer;
A plurality of interlayer hole connectors are disposed in those first dielectric layers, in order to connecting those auxiliary layers, and connect this auxiliary layer and this weld pad of the patterning conductor layer of the superiors;
One second dielectric layer is disposed between this substrate and undermost this patterning conductor layer, and covers this semiconductor circuit; And
A plurality of contact hole connectors are disposed in this second dielectric layer, in order to be electrically connected those first leads of this semiconductor element and undermost this patterning conductor layer.
13, internal connection-wire structure as claimed in claim 12, wherein those auxiliary layers comprise a loop-like conductor layer respectively, are disposed at should the pad zone peripheral region.
14, internal connection-wire structure as claimed in claim 13, wherein those auxiliary layers also comprise a plurality of block conductor layers respectively, are positioned at the inboard of this loop-like conductor layer.
15, internal connection-wire structure as claimed in claim 12, wherein those auxiliary layers are respectively a stratiform conductor layer, and those first leads lay respectively between those stratiform conductor layers.
16, internal connection-wire structure as claimed in claim 12, wherein the material of those auxiliary layers and those first leads comprises metal.
17, internal connection-wire structure as claimed in claim 16, wherein the material of those auxiliary layers and those first leads comprises aluminium or copper.
18, internal connection-wire structure as claimed in claim 12, wherein the material of this weld pad comprises metal.
19, internal connection-wire structure as claimed in claim 12, wherein the material of those contact hole connectors and those interlayer hole connectors comprises metal.
20, internal connection-wire structure as claimed in claim 12, wherein the material of those first dielectric layers and this second dielectric layer comprises silica.
21, internal connection-wire structure as claimed in claim 12, wherein this semiconductor circuit comprises ESD protection circuit.
22, internal connection-wire structure as claimed in claim 12 also comprises a plurality of second leads, is disposed at undermost this patterning conductor layer below.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101038666A CN100508179C (en) | 2005-09-16 | 2005-09-16 | Internal connection line structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101038666A CN100508179C (en) | 2005-09-16 | 2005-09-16 | Internal connection line structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1933140A true CN1933140A (en) | 2007-03-21 |
| CN100508179C CN100508179C (en) | 2009-07-01 |
Family
ID=37878875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101038666A Active CN100508179C (en) | 2005-09-16 | 2005-09-16 | Internal connection line structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100508179C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111384024A (en) * | 2018-12-27 | 2020-07-07 | 南亚科技股份有限公司 | Semiconductor structure and preparation method thereof |
-
2005
- 2005-09-16 CN CNB2005101038666A patent/CN100508179C/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111384024A (en) * | 2018-12-27 | 2020-07-07 | 南亚科技股份有限公司 | Semiconductor structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100508179C (en) | 2009-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1127764C (en) | wiring part and lead frame with same | |
| CN1670955A (en) | Semiconductor device | |
| CN1169216C (en) | Semiconductor integrated circuit device | |
| CN1848417A (en) | Top via pattern for bond pad structure and making method thereof | |
| CN1655349A (en) | Semiconductor device and method of manufacturing the same | |
| CN1645583A (en) | Semiconductor integrated circuit having connection pads over active elements | |
| CN101159252A (en) | Novel bonding and probing pad structures | |
| CN1095197C (en) | Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device | |
| CN1947247A (en) | Universal interconnect die | |
| CN1820367A (en) | Surface mount multichip devices | |
| CN1893077A (en) | Semiconductor device | |
| CN1873962A (en) | Semiconductor element and manufacturing method thereof | |
| CN1279157A (en) | Multi-layer substrates | |
| CN1716619A (en) | SOI substrate and method for manufacturing the same | |
| CN2896794Y (en) | Circuit-board with differential signal transmission structure | |
| CN1933140A (en) | Internal connection line structure | |
| CN1725462A (en) | Semiconductor device and method of manufacturing a semiconductor device | |
| CN1253939C (en) | Jointing washer structure on semiconductor substrate | |
| CN1905180A (en) | Semiconductor device | |
| CN1901184A (en) | Semiconductor device | |
| CN1808711A (en) | Package body and package body module | |
| JP2006324265A (en) | Semiconductor device | |
| CN1489209A (en) | Semiconductor device | |
| CN1226787C (en) | Metal pad and junction pad area structure | |
| TW200305272A (en) | Semiconductor integrated circuit device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |